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Journal articles on the topic 'Ovonic Threshold Selector (OTS)'

Author: Grafiati

Published: 25 May 2024

Last updated: 31 July 2025

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1

Zhang, Shiqing, Bing Song, Shujing Jia, et al. "Multilayer doped-GeSe OTS selector for improved endurance and threshold voltage stability." Journal of Semiconductors 43, no. 10 (2022): 104101. http://dx.doi.org/10.1088/1674-4926/43/10/104101.

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Abstract Selector devices are indispensable components of large-scale memristor array systems. The thereinto, ovonic threshold switching (OTS) selector is one of the most suitable candidates for selector devices, owing to its high selectivity and scalability. However, OTS selectors suffer from poor endurance and stability which are persistent tricky problems for application. Here, we report on a multilayer OTS selector based on simple GeSe and doped-GeSe. The experimental results show improving selector performed extraordinary endurance up to 1010 and the fluctuation of threshold voltage is 2.

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2

Kim, Jaeyeon, Wansun Kim, Jusung Kim, and Hyunchul Sohn. "Locally formed conductive filaments in an amorphous Ga₂Te₃ ovonic threshold switching device." AIP Advances 13, no. 3 (2023): 035221. http://dx.doi.org/10.1063/5.0140715.

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Ovonic threshold switching (OTS) selector devices based on chalcogenide materials are promising candidates for addressing the sneak current in high-density cross-point array structures owing to their high selectivity, high endurance, and fast switching speed. However, the OTS mechanism remains controversial and needs to be clarified. In this study, the formation of local conductive filaments (CFs) during threshold switching in an amorphous Ga2Te3 OTS selector device was investigated by electrical measurements and conductive-atomic force microscopy (C-AFM). The amorphous Ga2Te3 OTS selector dev

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3

Wang, Lun, Jinyu Wen, Rongjiang Zhu, Jiangxi Chen, Hao Tong, and Xiangshui Miao. "Failure mechanism investigation and endurance improvement in Te-rich Ge–Te based ovonic threshold switching selectors." Applied Physics Letters 121, no. 19 (2022): 193501. http://dx.doi.org/10.1063/5.0127177.

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The endurance of ovonic threshold switching (OTS) selectors is a key element for memory application. However, multi-element system for OTS in recent studies will induce element or phase segregation and lead to device failure. Since pure Te based device characterizes relatively high off current, in this work, we studied a Te-rich Ge–Te based OTS selector. We first conducted a failure analysis on Ge–Te based OTS selector. Through first-principles calculations, we found that a relatively larger Ge concentration in the Ge–Te system may lead to a worse device endurance after continuous operation du

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4

Wu, Renjie, Yuting Sun, Shuhao Zhang, Zihao Zhao, and Zhitang Song. "Great Potential of Si-Te Ovonic Threshold Selector in Electrical Performance and Scalability." Nanomaterials 13, no. 6 (2023): 1114. http://dx.doi.org/10.3390/nano13061114.

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The selector is an indispensable section of the phase change memory (PCM) chip, where it not only suppresses the crosstalk, but also provides high on-current to melt the incorporated phase change material. In fact, the ovonic threshold switching (OTS) selector is utilized in 3D stacking PCM chips by virtue of its high scalability and driving capability. In this paper, the influence of Si concentration on the electrical properties of Si-Te OTS materials is studied; the threshold voltage and leakage current remain basically unchanged with the decrease in electrode diameter. Meanwhile, the on-cur

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5

Noé, Pierre, Anthonin Verdy, Francesco d’Acapito, et al. "Toward ultimate nonvolatile resistive memories: The mechanism behind ovonic threshold switching revealed." Science Advances 6, no. 9 (2020): eaay2830. http://dx.doi.org/10.1126/sciadv.aay2830.

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Fifty years after its discovery, the ovonic threshold switching (OTS) phenomenon, a unique nonlinear conductivity behavior observed in some chalcogenide glasses, has been recently the source of a real technological breakthrough in the field of data storage memories. This breakthrough was achieved because of the successful 3D integration of so-called OTS selector devices with innovative phase-change memories, both based on chalcogenide materials. This paves the way for storage class memories as well as neuromorphic circuits. We elucidate the mechanism behind OTS switching by new state-of-the-ar

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Seong, Dongjun, Su Yeon Lee, Hyun Kyu Seo, Jong-Woo Kim, Minsoo Park, and Min Kyu Yang. "Highly Reliable Ovonic Threshold Switch with TiN/GeTe/TiN Structure." Materials 16, no. 5 (2023): 2066. http://dx.doi.org/10.3390/ma16052066.

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A new architecture has become necessary owing to the power consumption and latency problems of the von Neumann architecture. A neuromorphic memory system is a promising candidate for the new system as it has the potential to process large amounts of digital information. A crossbar array (CA), which consists of a selector and a resistor, is the basic building block for the new system. Despite the excellent prospects of crossbar arrays, the biggest obstacle for them is sneak current, which can cause a misreading between the adjacent memory cells, thus resulting in a misoperation in the arrays. T

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7

Laguna, C., M. Bernard, J. Garrione, et al. "Inside the ovonic threshold switching (OTS) device based on GeSbSeN: Structural analysis under electrical and thermal stress." Journal of Applied Physics 133, no. 7 (2023): 074501. http://dx.doi.org/10.1063/5.0134947.

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In this article, we present the structural investigation by Raman spectroscopy of GeSbSeN ovonic threshold switching (OTS) material once integrated in selector devices featuring a top electrode based on a transparent and conductive indium tin oxide layer. The devices are characterized by standard electrical protocols, and the structural evolution of the material is investigated after several switching operations. The results are correlated with the spectra obtained from blanket samples annealed at increasing temperature and are supported by XRD and TEM analyses. We establish a link between the

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8

Kim, Myoungsub, Youngjun Kim, Minkyu Lee, et al. "PE-ALD of Ge1−xSx amorphous chalcogenide alloys for OTS applications." Journal of Materials Chemistry C 9, no. 18 (2021): 6006–13. http://dx.doi.org/10.1039/d1tc00650a.

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Three-dimensional (3D) cross-point (X-point) technology, including amorphous chalcogenide-based ovonic threshold switching (OTS) selectors, is bringing new changes to the memory hierarchy for high-performance computing systems.

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9

Seo, Hyun Kyu, and Min Kyu Yang. "Improving Reliability of 1 Selector-1 ReRAM Crossbar Arrays Through Hybrid Switching Methods." Materials 18, no. 4 (2025): 761. https://doi.org/10.3390/ma18040761.

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In this study, an innovative switching approach is explored to improve the reliability of 1 Selector-1 ReRAM (1S1R) devices, integrated into a 4K crossbar array (CBA). The key innovation is the use of DC sweeping for set operations and AC single-pulse resetting to minimize device stress and prevent breakdown. The selector, based on a GeSeTe ovonic threshold switching (OTS) element, demonstrated excellent endurance (>1012 cycles), fast switching (<100 ns), and high device-to-device uniformity (<5% variability). The ReRAM, constructed with Pt/LiNbOx/W, exhibited robust bipolar resistive

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10

Minguet Lopez, J., T. Hirtzlin, M. Dampfhoffer, et al. "OxRAM + OTS optimization for binarized neural network hardware implementation." Semiconductor Science and Technology 37, no. 1 (2021): 014001. http://dx.doi.org/10.1088/1361-6641/ac31e2.

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Abstract Low-power memristive devices embedded on graphics or central processing units logic core are a very promising non-von-Neumann approach to improve significantly the speed and power consumption of deep learning accelerators, enhancing their deployment on embedded systems. Among various non-ideal emerging neuromorphic memory devices, synaptic weight hardware implementation using resistive random-access memories (RRAMs) within 1T1R architectures promises high performance on low precision binarized neural networks (BNN). Taking advantage of the RRAM capabilities and allowing to substantial

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11

Woo, Dae-Seong, Jae-Kyeong Kim, Gwang-Ho Park, Tae-Hun Shim, Jinsub Park, and Jea-Gun Park. "Self-Rectifying Self-Selecting Memory Having Bi-Layer Stacked Dual Functional Material for Logic-in-Memory." ECS Meeting Abstracts MA2024-02, no. 20 (2024): 1838. https://doi.org/10.1149/ma2024-02201838mtgabs.

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Recently, a 3D cross-point array (3DXP) consisting of phase-change random-access-memory (PCRAM) and ovonic threshold switching (OTS) selector has been reported as a memory solution for next-generation Compute-Express-Link (CXL) interconnect technology due to nonvolatile characteristics and high scalability1. Neverthless, a 3DXP has been faced limitations in implementing a vertically-stacked high-density memory array due to the high aspect ratio of the serial connection of two devices (i.e., PCRAM and OTS selector) and the thermal disturbance (TDB) problem between adjacent cells by using phase

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12

Na, Seunggyu, Namkyu Yoo, Jeongwoo Seo, et al. "Resistivity Engineering of Atomic Layer Deposited Tungsten Carbonitride Thin Films Via Carbon Concentration Control for Cross-Point Memory Electrodes Applications." ECS Meeting Abstracts MA2024-02, no. 30 (2024): 2215. https://doi.org/10.1149/ma2024-02302215mtgabs.

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As the demand for data storage and processing continues to rise exponentially, the development of phase change memory (PCM) has gained significant attention. In particular, three-dimensional (3D) vertical cross-point (VXP) array architecture is one of the most promising solutions for PCM fabrication, offering increased integration density and cost-effectiveness compared to the conventional planar memory structures, realized by atomic layer deposition (ALD) due to its excellent controllability and conformality.1) However, the implementation of a 3D VXP structure necessitates selectors, such as

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13

Kweon, Jun Young, and Yun-Heup Song. "CMOS Based Ovonic Threshold Switching Emulation Circuitry." Journal of Nanoscience and Nanotechnology 20, no. 8 (2020): 4977–79. http://dx.doi.org/10.1166/jnn.2020.17807.

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Ovonic Threshold Switch (OTS) device is most popular switching device in PRAM. There are many OTS device research; however, it is hard to make reasonable OTS device which uses a circuit simulation and real device. In this work, we studied the OTS device emulation circuit, which can follow OTS characteristic, especially snapback current using 0.18 μm CMOS technology. This circuitry composes snapback current generator, cut off switch and output driver. Snapback current generator can make the current level up to 300 μA.

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14

Yoo, Sijung, Chanyoung Yoo, Eui-Sang Park, Woohyun Kim, Yoon Kyeung Lee, and Cheol Seong Hwang. "Chemical interactions in the atomic layer deposition of Ge–Sb–Se–Te films and their ovonic threshold switching behavior." Journal of Materials Chemistry C 6, no. 18 (2018): 5025–32. http://dx.doi.org/10.1039/c8tc01041b.

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15

Kim, Doo San, Ju Eun Kim, You Jung Gill, et al. "Reactive ion etching of an ovonic threshold switch (OTS) material using hydrogen-based plasmas for non-volatile phase change memories." RSC Advances 10, no. 59 (2020): 36141–46. http://dx.doi.org/10.1039/d0ra05321j.

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Etch characteristics of ovonic threshold switch (OTS) materials composed of Ge–As–Te for a phase-change random access memory (PCRAM) has been investigated using reactive ion etching by hydrogen-based gases such as H<sub>2</sub>, CH<sub>4</sub>, NH<sub>3</sub>, CH<sub>4</sub> + H<sub>2</sub>, and CH<sub>4</sub> + NH<sub>3</sub>.

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16

An, Byung-Kwon, Seong-Beom Kim, and Yun-Heub Song. "Effect of Bottom Electrode Size on Ovonic Threshold Switch(OTS) Characteristics." JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE 20, no. 1 (2020): 8–11. http://dx.doi.org/10.5573/jsts.2020.20.1.008.

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17

Lee, Su Yeon, Hyun Kyu Seo, Se Yeon Jeong, and Min Kyu Yang. "Improved Electrical Characteristics of Field Effect Transistors with GeSeTe-Based Ovonic Threshold Switching Devices." Materials 16, no. 12 (2023): 4315. http://dx.doi.org/10.3390/ma16124315.

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Hyper-field effect transistors (hyper-FETs) are crucial in the development of low-power logic devices. With the increasing significance of power consumption and energy efficiency, conventional logic devices can no longer achieve the required performance and low-power operation. Next-generation logic devices are designed based on complementary metal-oxide-semiconductor circuits, and the subthreshold swing of existing metal-oxide semiconductor field effect transistors (MOSFETs) cannot be reduced below 60 mV/dec at room temperature owing to the thermionic carrier injection mechanism in the source

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18

Wang, Lun, Wang Cai, Da He, et al. "Performance Improvement of GeTex-Based Ovonic Threshold Switching Selector by C Doping." IEEE Electron Device Letters 42, no. 5 (2021): 688–91. http://dx.doi.org/10.1109/led.2021.3064857.

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19

Lee, Hyejin, Seong Won Cho, Seon Jeong Kim, et al. "Three-Terminal Ovonic Threshold Switch (3T-OTS) with Tunable Threshold Voltage for Versatile Artificial Sensory Neurons." Nano Letters 22, no. 2 (2022): 733–39. http://dx.doi.org/10.1021/acs.nanolett.1c04125.

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20

Gao, Tian, Jie Feng, Haili Ma, Xi Zhu, and Zhixian Ma. "AlxTe1−x selector with high ovonic threshold switching performance for memory crossbar arrays." Applied Physics Letters 114, no. 16 (2019): 163505. http://dx.doi.org/10.1063/1.5089818.

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21

Park, Jin Woo, Doo San Kim, Won Oh Lee, et al. "Etch Damages of Ovonic Threshold Switch (OTS) Material by Halogen Gas Based-Inductively Coupled Plasmas." ECS Journal of Solid State Science and Technology 8, no. 6 (2019): P341—P345. http://dx.doi.org/10.1149/2.0051906jss.

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22

Im, Seongil, JinGyeong Hwang, Jae-Seung Jeong, et al. "Stochastic artificial neuron based on Ovonic Threshold Switch (OTS) and its applications for Restricted Boltzmann Machine (RBM)." Chaos, Solitons & Fractals 186 (September 2024): 115195. http://dx.doi.org/10.1016/j.chaos.2024.115195.

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23

Kim, Doo San, You Jung Gill, Yun Jong Jang, Ye Eun Kim, and Geun Young Yeom. "Study on Hydrogen-Based Reactive Ion Etching of Ovonic Threshold Switch (OTS) Materials for Phase Change Memory Devices." ECS Transactions 102, no. 2 (2021): 39–43. http://dx.doi.org/10.1149/10202.0039ecst.

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24

Kim, Doo San, You Jung Gill, Yun Jong Jang, Ye Eun Kim, and Geun Young Yeom. "Study on Hydrogen-Based Reactive Ion Etching of Ovonic Threshold Switch (OTS) Materials for Phase Change Memory Devices." ECS Meeting Abstracts MA2021-01, no. 30 (2021): 1023. http://dx.doi.org/10.1149/ma2021-01301023mtgabs.

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25

Koo, Yunmo, Sangmin Lee, Seonggeon Park, Minkyu Yang, and Hyunsang Hwang. "Simple Binary Ovonic Threshold Switching Material SiTe and Its Excellent Selector Performance for High-Density Memory Array Application." IEEE Electron Device Letters 38, no. 5 (2017): 568–71. http://dx.doi.org/10.1109/led.2017.2685435.

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26

Lee, Su-Bong, Seongmin Jeong, and Jong-Souk Yeo. "Off-Current Analysis with Temperature-Dependent Subthreshold Conduction in SiTe Based Amorphous Chalcogenides for Ovonic Threshold Switching Selector Application." Applied Science and Convergence Technology 33, no. 4 (2024): 100–103. http://dx.doi.org/10.5757/asct.2024.33.4.100.

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27

Chen, Ziqi, Hao Tong, Wang Cai, Lun Wang, and Xiangshui Miao. "Modeling and Simulations of the Integrated Device of Phase Change Memory and Ovonic Threshold Switch Selector With a Confined Structure." IEEE Transactions on Electron Devices 68, no. 4 (2021): 1616–21. http://dx.doi.org/10.1109/ted.2021.3059436.

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28

Kim, S. D., H. W. Ahn, S. y. Shin, et al. "Effect of Ge Concentration in GexSe1-x Chalcogenide Glass on the Electronic Structures and the Characteristics of Ovonic Threshold Switching (OTS) Devices." ECS Solid State Letters 2, no. 10 (2013): Q75—Q77. http://dx.doi.org/10.1149/2.001310ssl.

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29

Kwak, Myonghoon, Sangmin Lee, Seyoung Kim, and Hyunsang Hwang. "Improved Pattern Recognition Accuracy of Hardware Neural Network: Deactivating Short Failed Synapse Device by Adopting Ovonic Threshold Switching (OTS)-Based Fuse Device." IEEE Electron Device Letters 41, no. 9 (2020): 1436–39. http://dx.doi.org/10.1109/led.2020.3008936.

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30

Kim, Hyungjun. "(Invited) Atomic Layer Deposition of “Group 16 Compounds” for Emerging Applications." ECS Meeting Abstracts MA2024-02, no. 30 (2024): 2238. https://doi.org/10.1149/ma2024-02302238mtgabs.

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The exclusive benefits of atomic layer deposition (ALD), including excellent conformality over nanoscale complex structures, high quality of deposited films even at low temperature down to room temperature, atomic scale thickness controllability, and high uniformity over nanoscale structure, make it viable tool for many emerging applications. Among varous materials which can be prepared by ALD, Group 16 compounds, including oxides and chalcogenides, are most widely studied materials group, which are very important for nanoscale device fabrications and other emrging applciations. In this presen

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31

Seo, Juhee, Seong Won Cho, Hyung-Woo Ahn, Byung-ki Cheong, and Suyoun Lee. "A study on the interface between an amorphous chalcogenide and the electrode: Effect of the electrode on the characteristics of the Ovonic Threshold Switch (OTS)." Journal of Alloys and Compounds 691 (January 2017): 880–83. http://dx.doi.org/10.1016/j.jallcom.2016.08.237.

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32

Antonelli, Renzo, C. De Camaret, G. Bourgeois, et al. "Reading reliability analysis and modeling in 1S1R devices based on Phase-Change Memory and Ovonic Threshold Switching selector integrated in a double-patterned self-aligned structure." Microelectronics Reliability 172 (September 2025): 115801. https://doi.org/10.1016/j.microrel.2025.115801.

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33

Andrieu, François. "(Invited) Advanced Non-Volatile-Memory Embedded with CMOS: Performance and Challenges." ECS Meeting Abstracts MA2025-01, no. 36 (2025): 1729. https://doi.org/10.1149/ma2025-01361729mtgabs.

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The microcontroller (MCU) market is progressively adopting alternatives to the NOR Flash as the embedded technology solutions below the 28nm node. Foundries already propose Magnetic Random Access Memory (MRAM) or oxide-based Resistive RAM (ReRAM) that are integrated in the Back-End-Of-the-Line (BEOL) above CMOS from 22nm node down to 12nm [1], [2], [3], [4], [5]. Another company offers the Phase-Change-Memory (PCM) as the resistive element at the 28nm and 18nm [6], [7]. The physics behind the switching mechanisms of these devices is different and so their comparative advantages/drawbacks. In t

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34

Kashem, Md Tashfiq Bin, Sadid Muneer, Lhacene Adnane, Faruk Dirisaglik, Ali Gokirmak, and Helena Silva. "(Digital Presentation) Calculation of the Energy Band Diagram and Estimation of Electronic Transport Parameters of Metastable Amorphous Ge₂Sb₂Te₅." ECS Meeting Abstracts MA2022-01, no. 18 (2022): 1043. http://dx.doi.org/10.1149/ma2022-01181043mtgabs.

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Phase change memory (PCM) is a high speed, high density non-volatile resistive memory technology that utilizes different phases (crystalline and amorphous) of phase change materials such as Ge2Sb2Te5 (GST) to store information [1]. Here, the material undergoes two types of reversible switching phenomena: (i) Ovonic Threshold Switching (OTS), which causes the amorphous phase of the material to switch from a highly resistive state to conductive state with application of high electric fields, resulting in current flow and (ii) Ovonic Memory Switching (OMS), which is due to the change of the phase

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35

Zhao, Zihao, Sergiu Clima, Daniele Garbin, et al. "Chalcogenide Ovonic Threshold Switching Selector." Nano-Micro Letters 16, no. 1 (2024). http://dx.doi.org/10.1007/s40820-023-01289-x.

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AbstractToday’s explosion of data urgently requires memory technologies capable of storing large volumes of data in shorter time frames, a feat unattainable with Flash or DRAM. Intel Optane, commonly referred to as three-dimensional phase change memory, stands out as one of the most promising candidates. The Optane with cross-point architecture is constructed through layering a storage element and a selector known as the ovonic threshold switch (OTS). The OTS device, which employs chalcogenide film, has thereby gathered increased attention in recent years. In this paper, we begin by providing

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36

Panneerselvam, Sakthikumaran, Salman Khan, and Anbarasu Manivannan. "Sub-nanosecond threshold switching dynamics in GeTe4 Ovonic Threshold Switching selector devices." Physica Scripta, February 7, 2025. https://doi.org/10.1088/1402-4896/adb3e1.

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Abstract The threshold switching (TS) dynamics of Ovonic Threshold Switching (OTS) selector devices play a pivotal role in the programming speeds of Phase Change Random Access Memory (PCRAM) and Selector Only Memory (SOM). The TS phenomenon in amorphous selector devices rapidly reduces the initial high-resistance state to a low-resistance state within nanoseconds. In this work, we present a detailed experimental study of the time-resolved transient threshold switching characteristics of GeTe4 OTS devices, including measurements of delay time and holding voltage. The voltage-dependent delay tim

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Qiao, Chong, Lanli Chen, Rongchuan Gu, et al. "Structure, bonding and electronic characteristics of amorphous Se." Physical Chemistry Chemical Physics, 2024. http://dx.doi.org/10.1039/d4cp00078a.

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Ovonic threshold switching (OTS) selector can effectively improve the storage density and suppress the leakage current of advanced phase-change memory. As a prototypical OTS material, amorphous GeSe is widely investigated....

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Haider, Ali, Shaoren Deng, Wouter Devulder, et al. "Pulsed chemical vapour deposition of conformal GeSe for application as OTS selector." Materials Advances, 2021. http://dx.doi.org/10.1039/d0ma01014f.

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Ovonic threshold switch (OTS) selector based on the voltage snapback of amorphous chalcogenides has received tremendous attention as it provides several desirable characteristics such as bidirectional switching, a controllable threshold...

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Clima, Sergiu, Daisuke Matsubayashi, Taras Ravsher, et al. "In silico screening for As/Se-free ovonic threshold switching materials." npj Computational Materials 9, no. 1 (2023). http://dx.doi.org/10.1038/s41524-023-01043-2.

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AbstractRestricted use of hazardous environmental chemicals is one important challenge that the semiconductor industry needs to face to improve its sustainability. Ovonic threshold switching (OTS) ternary compound materials used in memory selector devices contain As and Se. Engineering these elements out of these materials requires significant research effort. To facilitate this process, we performed systematic material screening for As/Se-free ternary materials, based on ab-initio simulations. To limit the large amount of possible chemical compositions to fewer promising candidates, we used p

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Zhao, Jiayi, Zihao Zhao, Zhitang Song, and Min Zhu. "GeSe ovonic threshold switch: the impact of functional layer thickness and device size." Scientific Reports 14, no. 1 (2024). http://dx.doi.org/10.1038/s41598-024-57029-7.

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AbstractThree-dimensional phase change memory (3D PCM), possessing fast-speed, high-density and nonvolatility, has been successfully commercialized as storage class memory. A complete PCM device is composed of a memory cell and an associated ovonic threshold switch (OTS) device, which effectively resolves the leakage current issue in the crossbar array. The OTS materials are chalcogenide glasses consisting of chalcogens such as Te, Se and S as central elements, represented by GeTe6, GeSe and GeS. Among them, GeSe-based OTS materials are widely utilized in commercial 3D PCM, their scalability,

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41

Yun-Jae, Lee, Han Minwoo, Yoo Su-Hyun, and Soon Aloysius. "Tunable threshold voltage of ZnTe-based ovonic switching devices via isovalent cation-exchange." October 21, 2020. https://doi.org/10.5281/zenodo.4113976.

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The neuromorphic system is one of the promising architectures for the next generation of electronic devices. In this novel system, the selector is pivotal in overcoming the unwanted sneak current issue due to a crossbar array structure in the neuromorphic system and ovonic threshold switches (OTS) are considered as one of the candidates for the selector. A key property of selector materials is the threshold voltage and thus its tunability is significant in terms of the flexibility and selectivity of various devices under different operating conditions. To investigate the tunability of OTS sele

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42

Jaafar, Ayoub H., Haytham Hussein, Tongjun Zhang, et al. "Integrated Ovonic Threshold Switching Selector and Resistive Switching Memory 1S1R in Electrodeposited ZnTe Thin Films." Advanced Materials Technologies, April 9, 2025. https://doi.org/10.1002/admt.202500168.

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AbstractChalcogenide materials are promising candidates for next generation memories since they can be stacked to integrate both two‐terminal non‐volatile memory and volatile selector devices for large‐scale‐integration crossbar arrays. Traditionally, devices based on chalcogenides have been fabricated using vacuum‐dependent and high‐temperature methods. In this study, the first demonstration of ovonic threshold switching (OTS) and resistive switching (RS) behaviors in zinc telluride (ZnTe) thin films produced via a rapid, cost‐effective, and vacuum‐free electrodeposition technique is presente

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43

Lee, Jangseop, Sanghyun Ban, Yoori Seo, Dongmin Kim, and Hyunsang Hwang. "Excellent Reliability Characteristics of Ovonic Threshold Switch Device with High Temperature Forming Technique." physica status solidi (RRL) – Rapid Research Letters, November 30, 2023. http://dx.doi.org/10.1002/pssr.202300412.

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Amorphous chalcogenide‐based ovonic threshold switch (OTS) has significant potential as a selector device in high‐density memory arrays. However, to realize the ideal selector device, OTS still needs to enhance its reliability characteristics such as device uniformity and threshold voltage (Vth) drift. Herein, we investigated the effect of elevated temperature forming on the selector characteristics of an OTS device. Our findings indicate that the reliability performance of the device significantly improved when the forming process was conducted at high temperature. In particular, it showed ex

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Ban, Sanghyun, Jangseop Lee, Yoori Seo, Wootae Lee, Taehoon Kim, and Hyunsang Hwang. "Advances in Ovonic Threshold Switch Selector Technologies for Storage Class Memory: From Fundamentals to Development and Beyond." Advanced Electronic Materials, December 10, 2024. https://doi.org/10.1002/aelm.202400665.

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AbstractThe explosive increase in the demand for data driven by advancements in artificial intelligence technology and rapid expansion of data centers necessitates storage class memory (SCM) capable of alleviating data traffic and workload issues. The success of SCM depends heavily on the selector. The ovonic threshold switch (OTS), a chalcogenide‐based amorphous thin film, has garnered increasing attention as a selector owing to its suitable characteristics. Here, OTS devices based on various chalcogens (tellurium, selenium, and sulfur) are reviewed, and how the selection of a chalcogen shoul

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Wang, Lun, Zixuan Liu, Jiangxi Chen, et al. "Refresh Operation Method for Solving Thermal Stability Issue and Improving Endurance of Ovonic Threshold Switching Selector." Journal of Materials Chemistry C, 2023. http://dx.doi.org/10.1039/d3tc00448a.

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Ovonic threshold switching (OTS) selector is indispensable for large-scale three-dimension phase change memory (3D PCM) memory. To meet with the requirement of compatibility with the back-end of line (BEOL) process...

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Gu, Rongchuan, Meng Xu, Yongpeng Liu, et al. "Unravelling the atomic mechanisms of tetrahedral doping in chalcogenide glass for electrical switching materials." Journal of Materials Chemistry C, 2023. http://dx.doi.org/10.1039/d3tc02984k.

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The ovonic threshold switching (OTS) selector is crucial for the development of high-density memory devices based on three-dimensional semiconductor integration technology, as it could suppress leakage current. However, the performance...

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Yuan, Zhenhui, Xiaodan Li, Sannian Song, et al. "The enhanced performance of a Si–As–Se ovonic threshold switching selector." Journal of Materials Chemistry C, 2021. http://dx.doi.org/10.1039/d1tc02730a.

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Zhang, Shiqing, Hui Xu, Zhiwei Li, Sen Liu, Bing Song, and Qingjiang Li. "A Compact Model of Ovonic Threshold Switch Combining Thermal Dissipation Effect." Frontiers in Neuroscience 15 (February 9, 2021). http://dx.doi.org/10.3389/fnins.2021.635264.

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Ovonic threshold switch (OTS) has received great attention in neuromorphic computing due to its support for high-density synapse array as a selector and leaky-integration-firing functions Hodgkin-Huxley neurons. However, there is no simple and complete model for device simulation and integrated circuit design, which hindered application until now. In this work, we developed a compact physical model of OTS based on the Poole-Frenkel effect accompanied by the thermal dissipation effect for the first time. The thermal dissipation effect describes the energy flow between the device and the environ

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Zhao, Zihao, Mengfei Zhang, Qun Yang, et al. "Volatile to Non‐Volatile Switching Transition in Chalcogenides." Advanced Functional Materials, March 30, 2025. https://doi.org/10.1002/adfm.202423940.

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AbstractOver the past 60 years, three distinct electrical switching behaviors have been discovered in chalcogenides: ovonic threshold switch (OTS), ovonic memory switch (OMS), and phase‐change switch (PCS). The first two have been successfully utilized in commercialized 3D Xpoint chips, serving as selector and memory cells, respectively. However, the relationships among these three behaviors remain unclear. Here, it is demonstrated that the Ge‐Te binary system exhibits these three switching mechanisms. Specifically, the switching behavior transforms from PCS‐like to OTS‐like within the composi

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Seo, Yoori, Jangseop Lee, Sanghyun Ban, Dongmin Kim, Geonhui Han, and Hyunsang Hwang. "Improving the selector characteristics of ovonic threshold switch via UV treatment process." Applied Physics Letters 123, no. 24 (2023). http://dx.doi.org/10.1063/5.0174074.

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In this study, we investigated the influence of ultraviolet (UV) treatment on the ovonic threshold switch (OTS) to improve its selector properties. Our findings demonstrate that iteratively applying UV treatment during the film deposition phase considerably improves device characteristics compared to a single UV treatment. Consequently, this process provided a significant decrease in the forming voltage, maintaining outstanding switching features, with an off-state current of approximately 2 nA. Furthermore, the refined UV treatment process resulted in an impressive 45% improvement in threshol

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