Relevant bibliographies by topics / Oxide based resistive memories OxRRAM

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  1. Journal articles
  2. Dissertations / Theses
  3. Book chapters
  4. Conference papers

Academic literature on the topic 'Oxide based resistive memories OxRRAM'

Author: Grafiati
Published: 4 June 2021
Last updated: 5 February 2022

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Journal articles on the topic "Oxide based resistive memories OxRRAM"

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Bocquet, Marc, Hassen Aziza, Weisheng Zhao, et al. "Compact Modeling Solutions for Oxide-Based Resistive Switching Memories (OxRAM)." Journal of Low Power Electronics and Applications 4, no. 1 (2014): 1–14. http://dx.doi.org/10.3390/jlpea4010001.

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Ambrogio, Stefano, Simone Balatti, David C. Gilmer, and Daniele Ielmini. "Analytical Modeling of Oxide-Based Bipolar Resistive Memories and Complementary Resistive Switches." IEEE Transactions on Electron Devices 61, no. 7 (2014): 2378–86. http://dx.doi.org/10.1109/ted.2014.2325531.

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Xu, Zhemi, Peiyuan Guan, Adnan Younis, Dewei Chu, and Sean Li. "Manipulating resistive states in oxide based resistive memories through defective layers design." RSC Advances 7, no. 89 (2017): 56390–94. http://dx.doi.org/10.1039/c7ra11681k.

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Guo, Yuzheng, and John Robertson. "Materials selection for oxide-based resistive random access memories." Applied Physics Letters 105, no. 22 (2014): 223516. http://dx.doi.org/10.1063/1.4903470.

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Wan, Zhenni, Robert B. Darling, and M. P. Anantram. "Vanadium Oxide Based RRAM Device." MRS Advances 2, no. 52 (2017): 3019–24. http://dx.doi.org/10.1557/adv.2017.442.

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ABSTRACTForming-free bipolar resistive switching characteristics in a Vanadium oxide based sandwich structure is observed for the first time. The bottom conducting layer is the common ground electrode for all devices. The top conducting layer acts as an active element with an additional Cr/Al/Cr electrode patterned on its top for making contact. Different from the typical metal/transition metal oxide/metal sandwich structure based resistive memories, our device exhibits a low resistance state (LRS) in its virgin state, and can be switched to a high resistance state (HRS) when a positive bias o
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Bocquet, Marc, Damien Deleruyelle, Hassen Aziza, et al. "Robust Compact Model for Bipolar Oxide-Based Resistive Switching Memories." IEEE Transactions on Electron Devices 61, no. 3 (2014): 674–81. http://dx.doi.org/10.1109/ted.2013.2296793.

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Gottlob, Daniel M., Eugénie Martinez, Claire Mathieu, et al. "Laboratory based X-ray photoemission core-level spectromicroscopy of resistive oxide memories." Ultramicroscopy 183 (December 2017): 94–98. http://dx.doi.org/10.1016/j.ultramic.2017.03.026.

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Jang, Sung Hwan, Dong Hun Kim, Dong Yoel Yoon, and Tae Whan Kim. "Electrical Characteristics of Metal Oxide Based Multi-Layer Vertical Resistive Switching Memories." Journal of Nanoscience and Nanotechnology 14, no. 11 (2014): 8201–4. http://dx.doi.org/10.1166/jnn.2014.9894.

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Wang, Junjun, Feng Wang, Lei Yin, et al. "A unipolar nonvolatile resistive switching behavior in a layered transition metal oxide." Nanoscale 11, no. 43 (2019): 20497–506. http://dx.doi.org/10.1039/c9nr07456b.

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JIN, YU-LING, KUI-JUAN JIN, CHEN GE, HUI-BIN LU, and GUO-ZHEN YANG. "RESISTIVE SWITCHING PHENOMENA IN COMPLEX OXIDE HETEROSTRUCTURES." Modern Physics Letters B 27, no. 29 (2013): 1330021. http://dx.doi.org/10.1142/s0217984913300214.

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Resistive memories based on the resistive switching effect have promising application in the ultimate nonvolatile data memory field. This brief review focuses on the resistive switching phenomena in the perovskite oxide heterostructures, which originate from the modulation of the interface properties due to the movement of the oxygen vacancies and the ferroelectric polarization. Many recent experiments have been carried out to demonstrate the role of the oxygen vacancies by controlling the content of the oxygen vacancies in the oxide heterostructures with plenty of oxygen vacancies. The import
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Dissertations / Theses on the topic "Oxide based resistive memories OxRRAM"

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Benoist, Antoine. "Pre and post breakdwon modeling of high-k dielectrics regarding antifuse and OxRAM non-volatile memories." Thesis, Lyon, 2017. http://www.theses.fr/2017LYSEI007.

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Les mémoires non volatiles intégrées représentent une part importante du marché des semi-conducteurs. Bien qu'il s'adresse à de nombreuses applications différentes, ce type de mémoire fait face à des problèmes pour poursuivre la réduction continue de la résolution des technologies CMOS. En effet, l'introduction récente de high-k et de métal pour la grille des transistors menace la compétitivité de la solution Flash. En conséquence, de nombreuses solutions émergentes sont étudiées. L'Antifuse dans le cadre des mémoires OTP est utilisée pour l'identification de puces, la configuration de circuit
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Labalette, Marina. "Intégration 3D de dispositifs mémoires résistives complémentaires dans le back end of line du CMOS." Thesis, Lyon, 2018. http://www.theses.fr/2018LYSEI037/document.

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La gestion, la manipulation et le stockage de données sont aujourd’hui de réels challenges. Pour supporter cette réalité, le besoin de technologies mémoires plus efficaces, moins énergivores, moins coûteuses à fabriquer et plus denses que les technologies actuelles s’intensifie. Parmi les technologies mémoires émergentes se trouve la technologie mémoire résistive, dans laquelle l’information est stockée sous forme de résistance électrique au sein d’une couche d’oxyde entre deux électrodes conductrices. Le plus gros frein à l’émergence de tels dispositifs mémoires résistives en matrices passive
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Chowdhury, Madhumita. "NiOx Based Resistive Random Access Memories." University of Toledo / OhioLINK, 2012. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1325535812.

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Dewolf, Tristan. "Nano-caractérisation des mécanismes de commutation dans les mémoires résistives à base d'HfO2." Thesis, Toulouse 3, 2018. http://www.theses.fr/2018TOU30223/document.

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Le numérique prend une place de plus en plus importante dans la vie de tous les jours et les quantités de données échangées explosent ce qui impose de développer des mémoires de plus en plus performantes, enjeu majeur du secteur de la microélectronique. Parmi les mémoires non-volatiles émergentes, les mémoires OxRRAM à base d'oxyde résistif sont particulièrement attrayantes et représentent un candidat potentiel au remplacement des mémoires FLASH (compatibles avec la technologie CMOS, faibles tensions de programmation). Leur structure est simple (Métal-Isolant-Métal) et leur fonctionnement est
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Jiu-XingHuang and 黃久倖. "Influence of oxygen vacancy reservoirs on resistive switching characteristics of oxide based resistance switching memories." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/33367771155989874222.

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Andrade, Jaime Manuel Maia. "A critical analysis of the quantum point contact model of conduction in Ta2O5-based resistive switching memories." Master's thesis, 2018. http://hdl.handle.net/10773/26119.

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Redox-based resistive random access memories (ReRAMs) are promising candidates to implement a new class of memories, called storage class memories (SCMs). These are meant to achieve small latency times, at an affordable price, fitting in between Flash memories and dynamic RAMs (DRAMs). ReRAMs are also being applied in the neural network field of research, given their ability to emulate synaptic plasticity.Thus, there is a growing interest in studying this class of devices, known as memristive, or resistive switching, devices. This work focuses on the conduction mechanisms proposed to model th
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Yi-JuChen and 陳奕儒. "Influence of the polarity of SET process on self-rectifying characteristics of tantalum oxide-based bilayer resistive switching memories." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/nv3upe.

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Book chapters on the topic "Oxide based resistive memories OxRRAM"

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Sparvoli, Marina, Mauro F. P. Silva, and Mario Gazziro. "Development of Doped Graphene Oxide Resistive Memories for Applications Based on Neuromorphic Computing." In Advances in Computational Intelligence. Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-59153-7_50.

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Zhuge, Fei, Bing Fu, and Hongtao Cao. "Advances in Resistive Switching Memories Based on Graphene Oxide." In New Progress on Graphene Research. InTech, 2013. http://dx.doi.org/10.5772/51260.

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Conference papers on the topic "Oxide based resistive memories OxRRAM"

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Dewolf, T., D. Cooper, N. Bernier, et al. "Investigation of Switching Mechanism in HfO2-Based Oxide Resistive Memories by In-Situ Transmission Electron Microscopy and Electron Energy Loss Spectroscopy." In ISTFA 2017. ASM International, 2017. http://dx.doi.org/10.31399/asm.cp.istfa2017p0371.

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Abstract Forming and breaking a nanometer-sized conductive area are commonly accepted as the physical phenomenon involved in the switching mechanism of oxide resistive random access memories (OxRRAM). This study investigates a state-of-the-art OxRRAM device by in-situ transmission electron microscopy (TEM). Combining high spatial resolution obtained with a very small probe scanned over the area of interest of the sample and chemical analyses with electron energy loss spectroscopy, the local chemical state of the device can be compared before and after applying an electrical bias. This in-situ
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KALEM, SEREF, Serdar B. Tekin, Zahit E. Kaya, et al. "Oxides based resistive switching memories." In Oxide-based Materials and Devices XII, edited by Ferechteh H. Teherani, David C. Look, and David J. Rogers. SPIE, 2021. http://dx.doi.org/10.1117/12.2585681.

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Sparvoli, Marina, and Jonas S. Marma. "Development of resistive memories based on silver doped graphene oxide for neuron simulation." In 2018 International Joint Conference on Neural Networks (IJCNN). IEEE, 2018. http://dx.doi.org/10.1109/ijcnn.2018.8489460.

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