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Journal articles on the topic 'Oxide based resistive memories OxRRAM'

Author: Grafiati

Published: 4 June 2021

Last updated: 5 February 2022

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1

Bocquet, Marc, Hassen Aziza, Weisheng Zhao, et al. "Compact Modeling Solutions for Oxide-Based Resistive Switching Memories (OxRAM)." Journal of Low Power Electronics and Applications 4, no. 1 (2014): 1–14. http://dx.doi.org/10.3390/jlpea4010001.

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2

Ambrogio, Stefano, Simone Balatti, David C. Gilmer, and Daniele Ielmini. "Analytical Modeling of Oxide-Based Bipolar Resistive Memories and Complementary Resistive Switches." IEEE Transactions on Electron Devices 61, no. 7 (2014): 2378–86. http://dx.doi.org/10.1109/ted.2014.2325531.

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3

Xu, Zhemi, Peiyuan Guan, Adnan Younis, Dewei Chu, and Sean Li. "Manipulating resistive states in oxide based resistive memories through defective layers design." RSC Advances 7, no. 89 (2017): 56390–94. http://dx.doi.org/10.1039/c7ra11681k.

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4

Guo, Yuzheng, and John Robertson. "Materials selection for oxide-based resistive random access memories." Applied Physics Letters 105, no. 22 (2014): 223516. http://dx.doi.org/10.1063/1.4903470.

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5

Wan, Zhenni, Robert B. Darling, and M. P. Anantram. "Vanadium Oxide Based RRAM Device." MRS Advances 2, no. 52 (2017): 3019–24. http://dx.doi.org/10.1557/adv.2017.442.

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ABSTRACTForming-free bipolar resistive switching characteristics in a Vanadium oxide based sandwich structure is observed for the first time. The bottom conducting layer is the common ground electrode for all devices. The top conducting layer acts as an active element with an additional Cr/Al/Cr electrode patterned on its top for making contact. Different from the typical metal/transition metal oxide/metal sandwich structure based resistive memories, our device exhibits a low resistance state (LRS) in its virgin state, and can be switched to a high resistance state (HRS) when a positive bias o

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6

Bocquet, Marc, Damien Deleruyelle, Hassen Aziza, et al. "Robust Compact Model for Bipolar Oxide-Based Resistive Switching Memories." IEEE Transactions on Electron Devices 61, no. 3 (2014): 674–81. http://dx.doi.org/10.1109/ted.2013.2296793.

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7

Gottlob, Daniel M., Eugénie Martinez, Claire Mathieu, et al. "Laboratory based X-ray photoemission core-level spectromicroscopy of resistive oxide memories." Ultramicroscopy 183 (December 2017): 94–98. http://dx.doi.org/10.1016/j.ultramic.2017.03.026.

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8

Jang, Sung Hwan, Dong Hun Kim, Dong Yoel Yoon, and Tae Whan Kim. "Electrical Characteristics of Metal Oxide Based Multi-Layer Vertical Resistive Switching Memories." Journal of Nanoscience and Nanotechnology 14, no. 11 (2014): 8201–4. http://dx.doi.org/10.1166/jnn.2014.9894.

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9

Wang, Junjun, Feng Wang, Lei Yin, et al. "A unipolar nonvolatile resistive switching behavior in a layered transition metal oxide." Nanoscale 11, no. 43 (2019): 20497–506. http://dx.doi.org/10.1039/c9nr07456b.

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10

JIN, YU-LING, KUI-JUAN JIN, CHEN GE, HUI-BIN LU, and GUO-ZHEN YANG. "RESISTIVE SWITCHING PHENOMENA IN COMPLEX OXIDE HETEROSTRUCTURES." Modern Physics Letters B 27, no. 29 (2013): 1330021. http://dx.doi.org/10.1142/s0217984913300214.

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Resistive memories based on the resistive switching effect have promising application in the ultimate nonvolatile data memory field. This brief review focuses on the resistive switching phenomena in the perovskite oxide heterostructures, which originate from the modulation of the interface properties due to the movement of the oxygen vacancies and the ferroelectric polarization. Many recent experiments have been carried out to demonstrate the role of the oxygen vacancies by controlling the content of the oxygen vacancies in the oxide heterostructures with plenty of oxygen vacancies. The import

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11

Zhu, Xiaojian, Wenjing Su, Yiwei Liu, et al. "Resistive Switching Memories: Observation of Conductance Quantization in Oxide-Based Resistive Switching Memory (Adv. Mater. 29/2012)." Advanced Materials 24, no. 29 (2012): 3898. http://dx.doi.org/10.1002/adma.201290176.

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12

Jeon, Hyeong-Un, and Won-Ju Cho. "Fully Transparent and Sensitivity-Programmable Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistor-Based Biosensor Platforms with Resistive Switching Memories." Sensors 21, no. 13 (2021): 4435. http://dx.doi.org/10.3390/s21134435.

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This paper presents a fully transparent and sensitivity-programmable biosensor based on an amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) with embedded resistive switching memories (ReRAMs). The sensor comprises a control gate (CG) and a sensing gate (SG), each with a resistive switching (RS) memory connected, and a floating gate (FG) that modulates the channel conductance of the a-IGZO TFT. The resistive coupling between the RS memories connected to the CG and SG produces sensitivity properties that considerably exceed the limit of conventional ion-sensitive field-eff

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13

Vianello, E., D. Garbin, N. Jovanovic, et al. "(Keynote) Oxide based Resistive Memories for Low Power Embedded Applications and Neuromorphic Systems." ECS Transactions 69, no. 3 (2015): 3–10. http://dx.doi.org/10.1149/06903.0003ecst.

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14

Das, Nipom Sekhar, Koustav Kashyap Gogoi, and Avijit Chowdhury. "Review on graphene oxide-based nanocomposites for resistive switching applications." International Journal of Innovative Research in Physics 2, no. 4 (2021): 1–7. http://dx.doi.org/10.15864/ijiip.2401.

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Graphene and graphene oxide (GO) have attracted growing attention in the field of resistive switching memory due to their extraordinary structural, physical and electronic characteristics. Moreover, properties such as excellent charge carrier mobility, high mechanical strength, and outstanding thermal properties make the graphene-based materials suitable for a broad range of other exploitations and many technological applications such as in sensors, energy storage devices, batteries, photocatalysis, electronic devices, supercapacitors etc. The limiting factors such as low storage density and s

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15

Ohta, Akio, Motoki Fukusima, Katsunori Makihara, Hideki Murakami, Seiichiro Higashi, and Seiichi Miyazaki. "Characterization of Resistive Switching Behaviors of RF Sputtered Si Oxide Resistive Random Access Memories with Ti-Based Electrodes." Japanese Journal of Applied Physics 52, no. 11S (2013): 11NJ06. http://dx.doi.org/10.7567/jjap.52.11nj06.

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16

Liu, Chang, Lai-Guo Wang, Kang Qin, et al. "Impact of Metal Nanocrystal Size and Distribution on Resistive Switching Parameters of Oxide-Based Resistive Random Access Memories." IEEE Transactions on Electron Devices 65, no. 10 (2018): 4674–78. http://dx.doi.org/10.1109/ted.2018.2866168.

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17

Rocha, Paulo R. F., Henrique Leonel Gomes, Lode K. J. Vandamme, et al. "Low-Frequency Diffusion Noise in Resistive-Switching Memories Based on Metal–Oxide Polymer Structure." IEEE Transactions on Electron Devices 59, no. 9 (2012): 2483–87. http://dx.doi.org/10.1109/ted.2012.2204059.

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18

Verrelli, E., D. Tsoukalas, P. Normand, A. H. Kean, and N. Boukos. "Forming-free resistive switching memories based on titanium-oxide nanoparticles fabricated at room temperature." Applied Physics Letters 102, no. 2 (2013): 022909. http://dx.doi.org/10.1063/1.4775760.

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19

Ibáñez, María José, Domingo Barrera, David Maldonado, Rafael Yáñez, and Juan Bautista Roldán. "Non-Uniform Spline Quasi-Interpolation to Extract the Series Resistance in Resistive Switching Memristors for Compact Modeling Purposes." Mathematics 9, no. 17 (2021): 2159. http://dx.doi.org/10.3390/math9172159.

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An advanced new methodology is presented to improve parameter extraction in resistive memories. The series resistance and some other parameters in resistive memories are obtained, making use of a two-stage algorithm, where the second one is based on quasi-interpolation on non-uniform partitions. The use of this latter advanced mathematical technique provides a numerically robust procedure, and in this manuscript, we focus on it. The series resistance, an essential parameter to characterize the circuit operation of resistive memories, is extracted from experimental curves measured in devices ba

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20

Rahaman, Sk Ziaur, Yu-De Lin, Heng-Yuan Lee, et al. "The Role of Ti Buffer Layer Thickness on the Resistive Switching Properties of Hafnium Oxide-Based Resistive Switching Memories." Langmuir 33, no. 19 (2017): 4654–65. http://dx.doi.org/10.1021/acs.langmuir.7b00479.

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21

Drouin, Dominique, Gabriel Droulers, Marina Labalette, et al. "A Fabrication Process for Emerging Nanoelectronic Devices Based on Oxide Tunnel Junctions." Journal of Nanomaterials 2017 (2017): 1–8. http://dx.doi.org/10.1155/2017/8613571.

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We present a versatile nanodamascene process for the realization of low-power nanoelectronic devices with different oxide junctions. With this process we have fabricated metal/insulator/metal junctions, metallic single electron transistors, silicon tunnel field effect transistors, and planar resistive memories. These devices do exploit one or two nanometric-scale tunnel oxide junctions based on TiO2, SiO2, HfO2, Al2O3, or a combination of those. Because the nanodamascene technology involves processing temperatures lower than 300°C, this technology is fully compatible with CMOS back-end-of-line

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22

Jang, Jingon, Han‐Hyeong Choi, Sung Hoon Paik, Jai Kyeong Kim, Seungjun Chung, and Jong Hyuk Park. "Highly Improved Switching Properties in Flexible Aluminum Oxide Resistive Memories Based on a Multilayer Device Structure." Advanced Electronic Materials 4, no. 12 (2018): 1800355. http://dx.doi.org/10.1002/aelm.201800355.

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23

Wang, Lu-Hao, Wen Yang, Qing-Qing Sun, et al. "The mechanism of the asymmetric SET and RESET speed of graphene oxide based flexible resistive switching memories." Applied Physics Letters 100, no. 6 (2012): 063509. http://dx.doi.org/10.1063/1.3681366.

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24

Senapati, Asim, Sourav Roy, Yu-Feng Lin, Mrinmoy Dutta, and Siddheswar Maikap. "Oxide-Electrolyte Thickness Dependence Diode-Like Threshold Switching and High on/off Ratio Characteristics by Using Al2O3 Based CBRAM." Electronics 9, no. 7 (2020): 1106. http://dx.doi.org/10.3390/electronics9071106.

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Diode-like threshold switching and high on/off ratio characteristics by using an Al/Ag/Al2O3/TiN conductive bridge resistive random access memories (CBRAM) have been obtained. The 5 nm-thick Al2O3 device shows superior memory parameters such as low forming voltage and higher switching uniformity as compared to the 20 nm-thick switching layer, owing to higher electric field across the material. Capacitance-voltage (CV) characteristics are observed for the Ag/Al2O3/TiN devices, suggesting the unipolar/bipolar resistive switching phenomena. Negative capacitance (NC) at low frequency proves induct

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25

Arashloo, Banafsheh Alizadeh. "Cupper doping effect on the electrical characteristics of TiO2 based Memristor." Brilliant Engineering 2, no. 1 (2020): 19–24. http://dx.doi.org/10.36937/ben.2021.001.004.

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Nanostructures as a starting point to solve the scaling problems of the CMOS technologies, have been concerned the attention of numerous researchers. By strong demanding for nonvolatile memory technology, resistive memories based on metal oxide has been common due to several advantages, such as low-power consumption, good scalability and fast switching speed. Even though high-temperature fabrication process has a large area limitation by their material characteristics. Metal oxide thin films are respectable candidate to fabricate at nano scale solid state electronic device. Metal/Metal-Oxide/M

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26

Hu, Lei, Shengju Zhu, Qi Wei, et al. "Enhancement of resistive switching ratio induced by competing interfacial oxygen diffusion in tantalum oxide based memories with metal nitride electrode." Applied Physics Letters 113, no. 4 (2018): 043503. http://dx.doi.org/10.1063/1.5037840.

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27

Copetti, Thiago, Guilherme Cardoso Medeiros, Mottaqiallah Taouil, Said Hamdioui, Letícia Bolzani Poehls, and Tiago Balen. "Evaluation of Single Event Upset Susceptibility of FinFET-based SRAMs with Weak Resistive Defects." Journal of Electronic Testing 37, no. 3 (2021): 383–94. http://dx.doi.org/10.1007/s10836-021-05949-x.

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AbstractFin Field-Effect Transistor (FinFET) technology enables the continuous downscaling of Integrated Circuits (ICs), using the Complementary Metal-Oxide Semiconductor (CMOS) technology in accordance with the More Moore domain. Despite demonstrating improvements on short channel effect and overcoming the growing leakage problem of planar CMOS technology, the continuity of feature size miniaturization tends to increase sensitivity to Single Event Upsets (SEUs) caused by ionizing particles, especially in blocks with higher transistor densities such as Static Random-Access Memories (SRAMs). Va

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28

Koohzadi, Pooria, Mohammad Taghi Ahmadi, Javad Karamdel, and Truong Khang Nguyen. "Graphene band engineering for resistive random-access memory application." International Journal of Modern Physics B 34, no. 18 (2020): 2050171. http://dx.doi.org/10.1142/s0217979220501714.

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Emerging memory technologies promise new memories to store more data at less cost. On the other hand, the scaling of silicon-based chips approached its physical limits. Nonvolatile memory technologies, such as resistive random-access memory (RRAM), are trying to solve this problem. The fundamental study in RRAM devices still needs to be moved further. In this regard, conduction mechanism of RRAM is focused in this study. The RRAM conductance varies considerably depending on the material used in the dielectric layer and selection of electrodes. To formulate the conductance mechanism, new materi

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29

Bousoulas, P., I. Michelakaki, J. Giannopoulos, K. Giannakopoulos, and D. Tsoukalas. "Material and Device Parameters Influencing Multi-Level Resistive Switching of Room Temperature Grown Titanium Oxide Layers." MRS Proceedings 1729 (2015): 59–64. http://dx.doi.org/10.1557/opl.2015.84.

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ABSTRACTWe present a detailed study of memory performance of titanium oxide (TiO2-x)-based resistive switching memories by modifying critical parameters of the films involved in the memory stack grown by reactive sputtering at room temperature. The device includes a Ti nanolayer at the Au/TiO2-x interface and it is defined by the following material stack: Au/Ti/TiO2-x/Au/SiO2/Si. We investigate the memory performance optimization of the device in terms of the Ti nanolayer thickness using as a starting point for the TiO2-x growth conditions these identified by varying the ratio of oxygen concen

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30

Mishra, Akshita, Soumen Saha, Henam Sylvia Devi, Abhisek Dixit, and Madhusudan Singh. "High resistive state retention in room temperature solution processed biocompatible memory devices for health monitoring applications." MRS Advances 4, no. 24 (2019): 1409–15. http://dx.doi.org/10.1557/adv.2019.161.

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AbstractWearable and bio-implantable health monitoring applications require flexible memory devices that can be used to locally store body vitals prior to transmission or to support local data processing in distributed smart systems. In recent years, non-volatile resistive random access memories composed of oxide-based insulators such as hafnium oxide and niobium pentoxide have attracted a great deal of interest. Unfortunately, hafnium and niobium are not low-cost materials and may also present health challenges. In this work, we have explored the alternative of using titanium dioxide as the i

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31

Schulman, A., M. J. Rozenberg, and C. Acha. "Anomalous time relaxation of the nonvolatile resistive state in bipolar resistive-switching oxide-based memories." Physical Review B 86, no. 10 (2012). http://dx.doi.org/10.1103/physrevb.86.104426.

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32

"(Keynote) Oxide based Resistive Memories for Low Power Embedded Applications and Neuromorphic Systems." ECS Meeting Abstracts, 2015. http://dx.doi.org/10.1149/ma2015-02/16/761.

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33

Kamiya, Katsumasa, Moon Young Yang, Takahiro Nagata, et al. "Generalized mechanism of the resistance switching in binary-oxide-based resistive random-access memories." Physical Review B 87, no. 15 (2013). http://dx.doi.org/10.1103/physrevb.87.155201.

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34

Khurana, Geetika, Nitu Kumar, Manish Chhowalla, James F. Scott, and Ram S. Katiyar. "Non-Polar and Complementary Resistive Switching Characteristics in Graphene Oxide devices with Gold Nanoparticles: Diverse Approach for Device Fabrication." Scientific Reports 9, no. 1 (2019). http://dx.doi.org/10.1038/s41598-019-51538-6.

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Abstract Downscaling limitations and limited write/erase cycles in conventional charge-storage based non-volatile memories stimulate the development of emerging memory devices having enhanced performance. Resistive random-access memory (RRAM) devices are recognized as the next-generation memory devices for employment in artificial intelligence and neuromorphic computing, due to their smallest cell size, high write/erase speed and endurance. Unipolar and bipolar resistive switching characteristics in graphene oxide (GO) have been extensively studied in recent years, whereas the study of non-pol

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35

Ghalamestani, S. Gorji, L. Goux, D. E. Díaz-Droguett, D. Wouters, and J. G. Lisoni. "WOx resistive memory elements for scaled Flash memories." MRS Proceedings 1337 (2011). http://dx.doi.org/10.1557/opl.2011.985.

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ABSTRACTWe investigated the resistive switching behavior of WOx films. WOx was obtained from the thermal oxidation of W thin layers. The parameters under investigation were the influence of the temperature (450-500 °C) and time (30-220 s) used to obtain the WOx on the resistive switching characteristics of Si\W\WOx\Metal_electrode ReRAM cells. The metal top electrodes (TE) tested were Pt, Ni, Cu and Au. The elemental composition and microstructure of the samples were characterized by means of elastic recoil detection analysis (ERD), X-ray photoelectron spectroscopy (XPS), scanning electron mic

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36

Rocha, Paulo F., Henrique L. Gomes, Asal Kiazadeh, Qian Chen, Dago M. de Leeuw, and Stefan C. J. Meskers. "Switching speed in Resistive Random Access Memories (RRAMS) based on plastic semiconductor." MRS Proceedings 1337 (2011). http://dx.doi.org/10.1557/opl.2011.859.

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ABSTRACTThis work addresses non-volatile memories based on metal-oxide polymer diodes. We make a thorough investigation into the static and dynamic behavior. Current-voltage characteristics with varying voltage ramp speed demonstrate that the internal capacitive double-layer structure inhibits the switching at high ramp rates (typical 1000 V/s). This behavior is explained in terms of an equivalent circuit.It is also reported that there is not a particular threshold voltage to induce switching. Voltages below a particular threshold can still induce switching when applied for a long period of ti

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37

Chang, Yao-Feng, Burt Fowler, Ying-Chen Chen, et al. "Resistive switching characteristics and mechanisms in silicon oxide memory devices." Physical Sciences Reviews 1, no. 5 (2016). http://dx.doi.org/10.1515/psr-2016-0011.

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Abstract Intrinsic unipolar SiOx-based resistance random access memories (ReRAM) characterization, switching mechanisms, and applications have been investigated. Device structures, material compositions, and electrical characteristics are identified that enable ReRAM cells with high ON/OFF ratio, low static power consumption, low switching power, and high readout-margin using complementary metal-oxide semiconductor transistor (CMOS)–compatible SiOx-based materials. These ideas are combined with the use of horizontal and vertical device structure designs, composition optimization, electrical co

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38

Schulman, A., M. J. Rozenberg, and C. Acha. "Publisher's Note: Anomalous time relaxation of the nonvolatile resistive state in bipolar resistive-switching oxide-based memories [Phys. Rev. B86, 104426 (2012)]." Physical Review B 86, no. 9 (2012). http://dx.doi.org/10.1103/physrevb.86.099902.

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39

Ahmed, Taimur, Sumeet Walia, Edwin L. H. Mayes, et al. "Time and rate dependent synaptic learning in neuro-mimicking resistive memories." Scientific Reports 9, no. 1 (2019). http://dx.doi.org/10.1038/s41598-019-51700-0.

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Abstract Memristors have demonstrated immense potential as building blocks in future adaptive neuromorphic architectures. Recently, there has been focus on emulating specific synaptic functions of the mammalian nervous system by either tailoring the functional oxides or engineering the external programming hardware. However, high device-to-device variability in memristors induced by the electroforming process and complicated programming hardware are among the key challenges that hinder achieving biomimetic neuromorphic networks. Here, a simple hybrid complementary metal oxide semiconductor (CM

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40

"Comprehensive Examination on Resistive Random Access Memory." International Journal of Recent Technology and Engineering 8, no. 4 (2019): 4663–67. http://dx.doi.org/10.35940/ijrte.d8398.118419.

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With the latest advances in materials science, resistive random access memory (RRAM) devices are attracting non-volatile, low power consumption, non-destructive read, and high density memory. Related performance parameters for RRAM devices include operating voltage, operating speed, resistivity, durability, retention time, device yield, and multi-level storage. Numerous resistive mechanisms, such as conductive filaments, space charge limited conduction, trap charging and discharging, Schottky emission, and pool-Frenkel emission, have been proposed to explain the resistance switches of RRAM dev

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