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Relevant bibliographies by topics / Oxide nitride

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Academic literature on the topic 'Oxide nitride'

Author: Grafiati

Published: 4 June 2021

Last updated: 3 February 2022

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Journal articles on the topic "Oxide nitride"

1

Lelątko, Józef, Marlena Freitag, Jan Rak, Tadeusz Wierzchoń, and Tomasz Goryczka. "Structure of Nitride and Nitride/Oxide Layers Formed on NiTi Alloy." Solid State Phenomena 186 (March 2012): 259–62. http://dx.doi.org/10.4028/www.scientific.net/ssp.186.259.

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The present work summarises the results, which were obtained from studies carried out on the structure of the nitride and nitride-oxide surface layers with use of the electron transmission microscopy. The layers were formed using glow discharge technique at relatively low temperature (300°C). It has been shown that low temperature nitriding or nitriding/oxiding process produced a thin layer ~30 nm thick. They were formed from titanium nitride as well as titanium oxides. The structure revealed that nanoparticles were surrounded by high amount of amorphous phase. Especially, electron microscopy

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2

Weinberg, Z. A., K. J. Stein, T. N. Nguyen, and J. Y. Sun. "Ultrathin oxide‐nitride‐oxide films." Applied Physics Letters 57, no. 12 (1990): 1248–50. http://dx.doi.org/10.1063/1.103499.

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3

Ryabov, A. V. "Medium-Carbon Free-Cutting Steel." Materials Science Forum 946 (February 2019): 47–52. http://dx.doi.org/10.4028/www.scientific.net/msf.946.47.

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The paper presents theoretical and experimental studies of the formation processes of boron nitride, aluminium nitride, aluminium oxide and manganese sulphide inclusions in a free-cutting steel. Fact Sage software was used to model the behaviour of non-metallic inclusions. Formation temperatures and the amount of key inclusions in steel were calculated. Formation order of inclusions is as follows: aluminium oxide > boron nitride > manganese sulphide > aluminium nitride. The object of study was the A45AR grade steel in 1.1–1.2 kg ingots. It was melted in an induction furnace, and alumi

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Kikkawa, Shinichi. "Nanocrystals of Nitrides and Oxides." Journal of Nano Research 24 (September 2013): 16–25. http://dx.doi.org/10.4028/www.scientific.net/jnanor.24.16.

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Nanocrystals are important to attain high performance in optical & magnetic materials such as phosphors, laser emitters and information recording media. They are also required in future devices that involve magnetoresistance, logic gates, magnetic resonance and metamaterials. Nanocrystals of oxides and nitrides (and oxynitrides) were studied as nanosized powders, nanowires and dispersed granular thin films. Recent advancements of such nanocrystals prepared at Hokkaido University are introduced in this paper. Nanocrystals were prepared in transparent conducting oxides, white LED phosphor ox

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Cho, Hoon Young, Chan Jin Park, Hyung Taek Oh, et al. "Charge Capture Kinetics of Nitride Trap in Oxide-Nitride-Oxide Structures." ECS Transactions 1, no. 5 (2019): 671–79. http://dx.doi.org/10.1149/1.2209314.

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Gritsenko, V. A., Hei Wong, J. B. Xu, et al. "Excess silicon at the silicon nitride/thermal oxide interface in oxide–nitride–oxide structures." Journal of Applied Physics 86, no. 6 (1999): 3234–40. http://dx.doi.org/10.1063/1.371195.

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Suzuki, E., and Y. Hayashi. "On oxide—nitride interface traps by thermal oxidation of thin nitride in metal-oxide-nitride-oxide-semiconductor memory structures." IEEE Transactions on Electron Devices 33, no. 2 (1986): 214–17. http://dx.doi.org/10.1109/t-ed.1986.22468.

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Aozasa, Hiroshi, Ichiro Fujiwara, Akihiro Nakamura, and Yasutoshi Komatsu. "Analysis of Carrier Traps in Si3N4in Oxide/Nitride/Oxide for Metal/Oxide/Nitride/Oxide/Silicon Nonvolatile Memory." Japanese Journal of Applied Physics 38, Part 1, No. 3A (1999): 1441–47. http://dx.doi.org/10.1143/jjap.38.1441.

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Li, Chuan Shan, Ru Li, Xiao Yong Du, et al. "Preparation of High-Performance Continuous Boron Nitride Fibers from Boracic Acid." Key Engineering Materials 602-603 (March 2014): 151–54. http://dx.doi.org/10.4028/www.scientific.net/kem.602-603.151.

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Continuous multi-filament boron nitride fibers have been prepared on a large scale using the melt drawn technique from a low-cost boracic acid. Boracic acid was heated to obtain the molten boric oxide in a melting tank. Molten boric oxide was melt spun in a conventional manner through an 200-tip bushing to produce a continuous multifilament yarn consisting of 200 filaments of boric oxide. Boric oxide fibers were nitrided in an ammonia and were annealed in an inert atmosphere while simultaneously subjecting the fibers to sufficient longitudinal tension as to at least prevent longitudinal shrink

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Wang, Liangbiao, Yanxia Pan, Qianli Shen, et al. "Sulfur-assisted synthesis of indium nitride nanoplates from indium oxide." RSC Advances 6, no. 100 (2016): 98153–56. http://dx.doi.org/10.1039/c6ra22471g.

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Dissertations / Theses on the topic "Oxide nitride"

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Henderson, Stuart James. "High throughput and traditional routes towards functional oxide and oxide-nitride materials." Thesis, University of Southampton, 2006. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.438680.

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Carroli, Marco. "Silicon oxide nitride (sion) films per applicazioni fotovoltaiche." Bachelor's thesis, Alma Mater Studiorum - Università di Bologna, 2013. http://amslaurea.unibo.it/6165/.

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La ricerca, negli ultimi anni, si è concentrata sullo studio di materiali con energy gap più ampio del silicio amorfo a-Si per ridurre gli assorbimenti parassiti all'interno di celle fotovoltaiche ad eterogiunzione. In questo ambito, presso l'Università di Costanza, sono stati depositati layers di silicon oxynitride amorfo a-SiOxNy. Le promettenti aspettative di questo materiale legate all'elevato optical gap, superiore ai 2.0 eV, sono tuttavia ridimensionate dai problemi intrinseci alla struttura amorfa. Infatti la presenza di una grande quantit a di difetti limita fortemente la conducibili

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Huang, Gejian. "High resolution spectroscopy of niobium nitride and vanadium oxide." Thesis, University of British Columbia, 1988. http://hdl.handle.net/2429/27961.

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This thesis reports the spectroscopic studies of two gaseous molecules, niobium nitride (NbN) and vanadium oxide (VO). The ³∏ — ³∆ electronic transition of NbN was recorded by laser-induced fluorescence at Doppler-limited resolution as well as at sub-Doppler resolution. Two almost identical branch features are observed in the ³∏₀ — ³∆₁ sub-band because the A-doubling in the ³∏₀ sub-state is large and almost J-independent. The ³∏₁ — ³∆₂ transition is shifted 600 cm⁻¹ to the red of its central first-order position as a result of very large second-order spin-orbit interaction effects. The shift i

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Buha, Jelena. "Nonaqueous syntheses of metal oxide and metal nitride nanoparticles." Phd thesis, Universität Potsdam, 2008. http://opus.kobv.de/ubp/volltexte/2008/1836/.

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Nanostructured materials are materials consisting of nanoparticulate building blocks on the scale of nanometers (i.e. 10-9 m). Composition, crystallinity and morphology can enhance or even induce new properties of the materials, which are desirable for todays and future technological applications. In this work, we have shown new strategies to synthesise metal oxide and metal nitride nanomaterials. The first part of the work deals with the study of nonaqueous synthesis of metal oxide nanoparticles. We succeeded in the synthesis of In2O3 nanopartcles where we could clearly influence the morpho

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Yoon, Jung Uk 1971. "Metrology of SIMOX buried oxide and nitride/STI CMP." Thesis, Massachusetts Institute of Technology, 1998. http://hdl.handle.net/1721.1/50518.

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Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1998.<br>Includes bibliographical references (leaves 149-154).<br>The increase in demand for faster and more powerful microprocessors in recent years has been the driving force to introduce new materials and processes into semiconductor fabrication facilities. As each fabrication facility tries to maximize its yield, it is mandatory that there exist metrology techniques to characterize both materials and processes. This mandate is the motivation behind this thesis. In this thesis, the metrology o

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Munktell, von Fieandt Sara. "Controlled interlayer between titanium carbon-nitride and aluminiumoxide." Thesis, Uppsala universitet, Institutionen för materialkemi, 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-161088.

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In the industry of metal cutting tools the conditions are extreme; the temperature can vary thousand degrees rapidly and the pressure can be tremendously high. To survive this kind of stress the cutting tool must be both hard and tough. In order to obtain these properties different coatings are used on a base of cemented carbide, WC-Co. Common coatings are hard ceramics like titanium nitride and titanium carbon-nitride with an outer layer of aluminium oxide. In this thesis the possibility of using titanium dioxide as an interlayer between titanium carbon-nitride and aluminium oxide to control

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Törndahl, Tobias. "Atomic Layer Deposition of Copper, Copper(I) Oxide and Copper(I) Nitride on Oxide Substrates." Doctoral thesis, Uppsala University, Department of Materials Chemistry, 2004. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-4651.

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<p>Thin films play an important role in science and technology today. By combining different materials, properties for specific applications can be optimised. In this thesis growth of copper, copper(I) oxide and copper(I) nitride on two different substrates, amorphous SiO<sub>2</sub> and single crystalline α-Al<sub>2</sub>O<sub>3</sub> by the so called Atomic Layer Deposition (ALD) techniques has been studied. This technique allows precise control of the growth process at monolayer level on solid substrates. Other characteristic features of ALD are that it produces films with excellent step co

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Törndahl, Tobias. "Atomic layer deposition of copper, copper(I) oxide and copper(I) nitride on oxide substrates /." Uppsala : Acta Universitatis Upsaliensis : Univ.-bibl. [distributör], 2004. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-4651.

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Stehr, Jan Eric [Verfasser]. "Point defects in oxide and nitride semiconductors / Jan Eric Stehr." Gießen : Universitätsbibliothek, 2011. http://d-nb.info/1063178371/34.

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Akhtaruzzaman, Md. "Dielectric studies of some oxide materials, nitride ceramics and glasses." Thesis, Durham University, 1989. http://etheses.dur.ac.uk/6308/.

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This thesis is primarily concerned with the evaluation and comparison of the dielectric behaviour of materials which may find application as substrates in microelectronic high-performance packaging. In the introductory chapter the factors governing the choice of the most suitable dielectric substrate for compatibility with silicon technology are reviewed; it is shown that in addition to good dielectric properties the thermal conductivity is important if high power packages are required together with the ability to obtain good matching of thermal expansion coefficients. This is followed by a su

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Books on the topic "Oxide nitride"

1

Yao, Takafumi, and Soon-Ku Hong, eds. Oxide and Nitride Semiconductors. Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-540-88847-5.

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Oxide and nitride semiconductors: Processing, properties, and applications. Springer, 2009.

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3

service), ScienceDirect (Online, ed. Nitric oxide. Elsevier/Academic Press, 2008.

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McCarthy, Helen O., and Jonathan A. Coulter, eds. Nitric Oxide. Humana Press, 2011. http://dx.doi.org/10.1007/978-1-61737-964-2.

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Mengel, Alexander, and Christian Lindermayr, eds. Nitric Oxide. Springer New York, 2018. http://dx.doi.org/10.1007/978-1-4939-7695-9.

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Mayer, Bernd, ed. Nitric Oxide. Springer Berlin Heidelberg, 2000. http://dx.doi.org/10.1007/978-3-642-57077-3.

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7

Loscalzo, Joseph, and Nathan S. Bryan. Nitrite and nitrate in human health and disease. Humana Press, 2011.

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8

Gupta, Kapuganti Jagadis, ed. Plant Nitric Oxide. Springer New York, 2016. http://dx.doi.org/10.1007/978-1-4939-3600-7.

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Titheradge, Michael A. Nitric Oxide Protocols. Humana Press, 1997. http://dx.doi.org/10.1385/1592597491.

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Hassid, Aviv. Nitric Oxide Protocols. Humana Press, 2004. http://dx.doi.org/10.1385/1592598072.

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Book chapters on the topic "Oxide nitride"

1

Hanada, T. "Basic Properties of ZnO, GaN, and Related Materials." In Oxide and Nitride Semiconductors. Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-540-88847-5_1.

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Lee, S. H. "ZnO and GaN Nanostructures and their Applications." In Oxide and Nitride Semiconductors. Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-540-88847-5_10.

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Ehrentraut, D., F. Orito, Y. Mikawa, and T. Fukuda. "Solvothermal Growth of ZnO and GaN." In Oxide and Nitride Semiconductors. Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-540-88847-5_2.

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Chang, J., S. K. Hong, K. Matsumoto, et al. "Growth of ZnO and GaN Films." In Oxide and Nitride Semiconductors. Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-540-88847-5_3.

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Park, J. S., and S. K. Hong. "Control of Polarity and Application to Devices." In Oxide and Nitride Semiconductors. Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-540-88847-5_4.

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Hong, S. K., and H. J. Lee. "Growth of Nonpolar GaN and ZnO Films." In Oxide and Nitride Semiconductors. Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-540-88847-5_5.

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Hong, S. K., and H. K. Cho. "Structural Defects in GaN and ZnO." In Oxide and Nitride Semiconductors. Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-540-88847-5_6.

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Song, J. H. "Optical Properties of GaN and ZnO." In Oxide and Nitride Semiconductors. Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-540-88847-5_7.

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Ha, J. S. "GaN and ZnO Light Emitters." In Oxide and Nitride Semiconductors. Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-540-88847-5_9.

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Oh, D. C. "Electrical Properties of GaN and ZnO." In Oxide and Nitride Semiconductors. Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-540-88847-5_8.

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Conference papers on the topic "Oxide nitride"

1

Chiang, Steve, Roger Wang, Jacob Chen, et al. "oxide-Nitride-oxide Antifuse Reliability." In 28th International Reliability Physics Symposium. IEEE, 1990. http://dx.doi.org/10.1109/irps.1990.363520.

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Ohnishi, S., H. Watanabe, S. Adachi, N. Aoto, and T. Kikkawa. "Ultrathin Oxide/Nitride/Oxide/Nitride Multilayer Films for Mbit DRAM Capacitors." In 1992 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1992. http://dx.doi.org/10.7567/ssdm.1992.b-2-4.

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Kobayashi, Kiyoteru, Hiroshi Miyatake, and Makoto Hirayama. "Conduction in Thin Nitride Films and Oxide/Nitride Films." In 1989 Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1989. http://dx.doi.org/10.7567/ssdm.1989.s-d-8.

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Toda, Akitoshi. "Oxide-sharpened Silicon Nitride Cantilever Probe." In SCANNING TUNNELING MICROSCOPY/SPECTROSCOPY AND RELATED TECHNIQUES: 12th International Conference STM'03. AIP, 2003. http://dx.doi.org/10.1063/1.1639708.

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Kobayashi, K., H. Miyatake, J. Mitsuhashi, M. Hirayama, T. Higaki, and H. Abe. "Dielectric breakdown and current conduction of oxide/nitride/oxide multi-layer structures." In Digest of Technical Papers.1990 Symposium on VLSI Technology. IEEE, 1990. http://dx.doi.org/10.1109/vlsit.1990.111037.

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Dong Hua Liq, Wandong Kim, Jung Hoon Lee, and Byung-Gook Park. "Thickness-dependence of oxide-nitride-oxide erase property in SONOS flash memory." In 2009 International Semiconductor Device Research Symposium (ISDRS 2009). IEEE, 2009. http://dx.doi.org/10.1109/isdrs.2009.5378073.

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Akpovo, Charlemagne, Cleon Barnett, Staci Brown, and Lewis Johnson. "LIBS on Silicon Oxide and Nitride Thin Films." In Laser Applications to Chemical, Security and Environmental Analysis. OSA, 2010. http://dx.doi.org/10.1364/lacsea.2010.lmd8.

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Higashiwaki, M., S. Chowdhury, B. R. Swenson, et al. "Interface Control of III-Oxide/Nitride Composite Structures." In 2012 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2012. http://dx.doi.org/10.7567/ssdm.2012.i-1-1.

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Liu, H. Y., X. Li, F. Zhang, et al. "Electrical properties of ZnO:Ga as a transparent conducting oxide in InGaN based light emitting diodes." In Gallium Nitride Materials and Devices VII. SPIE, 2012. http://dx.doi.org/10.1117/12.903930.

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Ma, Zhijian, Jeong Y. Choi, and Chuen-Der Lien. "Scaling considerations of interpoly oxide-nitride-oxide dielectric for high-density DRAM applications." In Microelectronic Manufacturing 1996, edited by Ih-Chin Chen, Nobuo Sasaki, Divyesh N. Patel, and Girish A. Dixit. SPIE, 1996. http://dx.doi.org/10.1117/12.250866.

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Reports on the topic "Oxide nitride"

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Edgar, James H. High K Oxide Insulated Gate Group III Nitride-Based FETs. Defense Technical Information Center, 2014. http://dx.doi.org/10.21236/ada622706.

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Moore, G., G. C. Nelson, and H. H. Madden. Auger analysis of scandium, Sc-Oxide, Sc-Deuteride and Sc-Nitride. Office of Scientific and Technical Information (OSTI), 1996. http://dx.doi.org/10.2172/369715.

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Apen, E. A., L. M. Atagi, R. S. Barbero, et al. New deposition processes for the growth of oxide and nitride thin films. Office of Scientific and Technical Information (OSTI), 1998. http://dx.doi.org/10.2172/676883.

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Cooper, James A., and Jr. Investigation of Jet Vapor Deposited (JVD) Silicon Oxide/Nitride/Oxide (ONO) Films as Gate Dielectrics for SiC and GaN Devices. Defense Technical Information Center, 2003. http://dx.doi.org/10.21236/ada413131.

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Zhang, Zhihong. Synthesis and characterization of novel group VI metal (Mo, W) nitride and oxide compounds. Office of Scientific and Technical Information (OSTI), 1998. http://dx.doi.org/10.2172/587893.

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Lala, Peeyush K. Nitric Oxide in Mammary Tumor Progression. Defense Technical Information Center, 2001. http://dx.doi.org/10.21236/ada398946.

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Li, Nianzhen. Nitric Oxide in Astrocyte-Neuron Signaling. Office of Scientific and Technical Information (OSTI), 2002. http://dx.doi.org/10.2172/803739.

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Flytzani-Stephanopoulos, M., A. F. Sarofim, and Y. Zhang. Direct catalytic decomposition of nitric oxide. Office of Scientific and Technical Information (OSTI), 1992. http://dx.doi.org/10.2172/7045949.

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Flytzani-Stephanopoulos, M., A. F. Sarofim, and Y. Zhang. Direct catalytic decomposition of nitric oxide. Office of Scientific and Technical Information (OSTI), 1992. http://dx.doi.org/10.2172/6788311.

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Flytzani-Stephanopoulos, M., A. F. Sarofim, and Y. Zhang. Direct catalytic decomposition of nitric oxide. Office of Scientific and Technical Information (OSTI), 1992. http://dx.doi.org/10.2172/6930554.

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