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Relevant bibliographies by topics / Oxides. Solar cells. Thin films Thin films

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Academic literature on the topic 'Oxides. Solar cells. Thin films Thin films'

Author: Grafiati

Published: 4 June 2021

Last updated: 4 February 2022

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Journal articles on the topic "Oxides. Solar cells. Thin films Thin films"

1

Huang, Jin Hua, Rui Qin Tan, Jia Li, Yu Long Zhang, Ye Yang, and Wei Jie Song. "Thermal Stability of Aluminum Doped Zinc Oxide Thin Films." Materials Science Forum 685 (June 2011): 147–51. http://dx.doi.org/10.4028/www.scientific.net/msf.685.147.

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Transparent conductive oxides are key electrode materials for thin film solar cells. Aluminum doped zinc oxide has become one of the most promising transparent conductive oxide (TCO) materials because of its excellent optical and electrical properties. In this work, aluminum doped zinc oxide thin films were prepared using RF magnetron sputtering of a 4 at% ceramic target. The thermal stability of aluminum doped zinc oxide thin films was studied using various physical and structural characterization methods. It was observed that the electrical conductivity of aluminum doped zinc oxide thin films deteriorated rapidly and unevenly when it was heated up to 350 °C. When the aluminum doped zinc oxide thin films were exposed to UV ozone for a short time before heating up, its thermal stability and large area homogeneity were significantly improved. The present work provided a novel method for improving the durability of aluminum doped zinc oxides as transparent conductive electrodes in thin film solar cells.

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Singh, Girjesh, S. B. Shrivastava, Deepti Jain, Swati Pandya, and V. Ganesan. "Effect of Molarity of Precursor Solution on Nanocrystalline Zinc Oxide Thin Films." Defect and Diffusion Forum 293 (August 2009): 99–105. http://dx.doi.org/10.4028/www.scientific.net/ddf.293.99.

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During the last two decades, the use of transparent conducting films of non-stoichiometric and doped metallic oxides for the conversion of solar energy into electrical energy has assumed great significance. A variety of materials, using various deposition techniques, has been tried for this purpose [1-3]. Among these various materials, zinc oxide (ZnO) is one of the prominent oxide semiconductors suitable for photovoltaic applications because of its high electrical conductivity and optical transmittance in the visible region of the solar spectrum [4]. Furthermore, thin films of ZnO have shown good chemical stability against hydrogen plasma, which is of prime importance in a-Si:H-based solar-cell fabrication. Thus, zinc oxide can serve as a good candidate for replacing SnO2 and indium tin oxide (ITO) films in Si:H-based solar cells. One of the outstanding features of ZnO is its large excitonic binding energy, i.e. 60meV, leading to the existence of excitons at room temperature and even at higher temperatures [5-8]. These unique characteristics have generated a wide range of applications of ZnO. For example, gas sensors [9], surface acoustic devices [10], transparent electrodes and solar cells. Many techniques are used for preparing the transparent conducting ZnO films, such as RF sputtering [11], evaporation [12], chemical vapour deposition [13], ion beam sputtering [14] and spray pyrolysis [15–18]. Among these, the spray pyrolysis technique has attracted considerable attention due to its simplicity and large-scale production combined with low-cost fabrication. By using this technique, one can produce large-area coatings without any need for ultra-high vacuum. Thus, the capital cost and the production cost of high-quality zinc oxide semiconductor thin films are lowest among all other techniques. In the present work, we have synthesized ZnO films by using the spray pyrolysis technique. A number of films have been prepared by changing the molarity of the precursor solution. The prepared films have been characterized with regard to their structural, morphological and electrical properties.

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Du, Wenhan, Jingjing Yang, Chao Xiong, Yu Zhao, and Xifang Zhu. "Preferential orientation growth of ITO thin film on quartz substrate with ZnO buffer layer by magnetron sputtering technique." International Journal of Modern Physics B 31, no. 16-19 (July 26, 2017): 1744065. http://dx.doi.org/10.1142/s0217979217440659.

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In order to improve the photoelectric transformation efficiency of thin-film solar cells, one plausible method was to improve the transparent conductive oxides (TCO) material property. In-doped tin oxide (ITO) was an important TCO material which was used as a front contact layer in thin-film solar cell. Using magnetron sputtering deposition technique, we prepared preferential orientation ITO thin films on quartz substrate. XRD and SEM measurements were used to characterize the crystalline structure and morphology of ITO thin films. The key step was adding a ZnO thin film buffer layer before ITO deposition. ZnO thin film buffer layer increases the nucleation center numbers and results in the (222) preferential orientation growth of ITO thin films.

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Khan, Sadaf Bashir, Syed Irfan, Zheng Zhuanghao, and Shern Long Lee. "Influence of Refractive Index on Antireflectance Efficiency of Thin Films." Materials 12, no. 9 (May 7, 2019): 1483. http://dx.doi.org/10.3390/ma12091483.

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In today’s world, scientific development is tremendously strengthened by imitating natural processes. This development remarkably validates progressive and efficient operation of multifunctional thin films in variable ecological circumstances. We use TFCalc thinfilm software, a reliable and trustworthy simulation tool, to design antireflective (AR) coatings for solar cells that can operate in varying environmental conditions and can be functional according to user-defined conditions. Silicon nearly reflects 36% light in the 550 nm wavelength region, causing a significant loss in solar cell efficiency. We used silicon as the substrate on which we designed and fabricated a trilayer inorganic oxide AR thin films, and this reduced it reflectance to <4% in the 300~800 nm wavelength range. Because of their distinguishing physical physiognomies, we used a combination of different inorganic oxides, comprising high-, low-, and medium-refractive indices, to model AR coatings in the desired wavelength range. Experimental implementation of the designed AR thin films in the present study unlocks new techniques for production of competent, wideband-tunable AR coatings that are applicable in high-performance photovoltaic applications.

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Lee, Jin Woo, Yun Hae Kim, and Chang Wook Park. "Electrical and Optical Properties of ZnO:Ag Thin-Films Depend on Lamination Formation by DC Magnetron Sputtering." Advanced Materials Research 1110 (June 2015): 211–17. http://dx.doi.org/10.4028/www.scientific.net/amr.1110.211.

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Transparent conductive oxides such as Impurity doped indium oxides, tin oxides, zinc oxide systems are widely used in the field of optoelectronics such as Photo voltaic solar cells, Flat panel displays. Recently in case of the ZnO / Ag Multilayer thin films, doping Ag films on the ZnO layer and ZnO deposited on top of it a way that has been used. However, if thin film applied to the semiconductor, because of lamination of various forms, characteristics of stacking sequence and thin film layer is a need for research. In this study, using DC magnetron sputteirng how the stacking sequence of the film and the transparent operation of various process variables, the possibility of the application to electronic devices was confirmed.

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Mohamad, S. A., Wan Jeffrey Basirun, Z. A. Ibrahim, A. K. Arof, and Mehdi Ebadi. "Controlled Potential Electrodeposition and Characterization of ZnTe Thin Films on Indium Tin Oxides." Advanced Materials Research 264-265 (June 2011): 726–31. http://dx.doi.org/10.4028/www.scientific.net/amr.264-265.726.

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Electrodeposition of ZnTe thin films by controlled potential method from aqueous solutions on ITO were done to investigate characteristics suitable as a window material in solar cells technology. The influence deposition of potential towards the Zn:Te ratio and the crystallinity are discussed. The electrodeposited films were investigated by using X-Ray Diffraction and Energy Dispersive Analysis of X-Ray. The Te content decreases at higher deposition potentials.

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Nordseth, Ørnulf, Irinela Chilibon, Bengt Gunnar Svensson, Raj Kumar, Sean Erik Foss, Cristina Vasiliu, Laurentiu Baschir, et al. "Characterization of Cuprous Oxide Thin Films for Application in Solar Cells." Diffusion Foundations 22 (May 2019): 65–73. http://dx.doi.org/10.4028/www.scientific.net/df.22.65.

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Cuprous oxide (Cu2O) has a high optical absorption coefficient and favourable electrical properties, which make Cu2O thin films attractive for photovoltaic applications. Using reactive radio-frequency magnetron sputtering, high quality Cu2O thin films with good carrier transport properties were prepared. This paper presents the characteristics of Cu2O thin films that were sputter deposited on quartz substrates and subjected to post-deposition rapid thermal annealing. The thickness of the thin films and the optical constants were determined by ellipsometry spectroscopy (SE). The optical transmittance increased in lower wavelength region after annealing at 900 ̊C in rapid thermal annealing (RTA). The structural and morphological properties of the Cu2O thin films were investigated by electronic scanning microscopy (SEM) and atomic force microscopy (AFM), whereas elemental analysis was performed by X-ray fluorescence spectroscopy (XRF). The carrier mobility, carrier density and film resistivity were changed after post-deposition rapid thermal annealing from respectively ~14 cm2/Vs, ~2.3 x 1015 cm-3 and ~193 Ωcm for the as-deposited Cu2O film to ~49 cm2/Vs, ~5.0 x 1014 cm-3 and ~218 Ωcm for the annealed Cu2O film. The investigation suggests that the sputter-deposited Cu2O thin films have good potential for application as absorber layers in solar cells.

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Emeka, Nwanna Charles, Patrick Ehi Imoisili, and Tien-Chien Jen. "Preparation and Characterization of NbxOy Thin Films: A Review." Coatings 10, no. 12 (December 17, 2020): 1246. http://dx.doi.org/10.3390/coatings10121246.

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Niobium oxides (NbO, NbO2, Nb2O5), being a versatile material has achieved tremendous popularity to be used in a number of applications because of its outstanding electrical, mechanical, chemical, and magnetic properties. NbxOy films possess a direct band gap within the ranges of 3.2–4.0 eV, with these films having utility in different applications which include; optical systems, stainless steel, ceramics, solar cells, electrochromic devices, capacitor dielectrics, catalysts, sensors, and architectural requirements. With the purpose of fulfilling the requirements of a vast variety of the named applications, thin films having comprehensive properties span described by film composition, morphology, structural properties, and thickness are needed. The theory, alongside the research status of the different fabrication techniques of NbxOy thin films are reported in this work. The impact of fabrication procedures on the thin film characteristics which include; film thickness, surface quality, optical properties, interface properties, film growth, and crystal phase is explored with emphases on the distinct deposition process applied, are also described and discussed.

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Wang, Fang-Hsing, Ming-Yue Fu, Chean-Cheng Su, Cheng-Fu Yang, Hua-Tz Tzeng, Han-Wen Liu, and Chung-Yuan Kung. "Improve the Properties of p-i-nα-Si:H Thin-Film Solar Cells Using the Diluted Hydrochloric Acid-Etched GZO Thin Films." Journal of Nanomaterials 2013 (2013): 1–6. http://dx.doi.org/10.1155/2013/495752.

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Gallium-doped zinc oxide (GZO) thin films were deposited on glass, and the process parameters are RF power of 50 W and working pressure of 5 mTorr, and the substrate temperature was changed from room temperature to 300°C. At first, the thickness was around 300 nm by controlling the deposition time. The effects of substrate temperature on the crystallinity, lattice constant (c), carrier mobility, carrier concentration, resistivity, and optical transmission rate of the GZO thin films were studied. The 200°C-deposited GZO thin films had the best crystallinity, the larger carrier concentration and carrier mobility, and the lowest resistivity. For that, the thickness of the GZO thin films was extended to around 1000 nm. Hydrochloric (HCl) acid solutions with different concentrations (0.1%, 0.2%, and 0.5%) were used to etch the surfaces of the GZO thin films, which were then used as the substrate electrodes to fabricate the p-i-nα-Si:H thin-film solar cells. The haze ratio of the GZO thin films increased with increasing HCl concentration, and that would effectively enhance light trapping inside the absorber material of solar cells and then improve the efficiency of the fabricated thin-film solar cells.

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Plateau, T. P., M. T. Islam, and N. Islam``. "Potentiostat Electro-Deposited Cuprous Oxide and Cupric Oxide Thin Films for Photovoltaic Use." International Journal of Automotive and Mechanical Engineering 16, no. 2 (July 4, 2019): 6624–33. http://dx.doi.org/10.15282/ijame.16.2.2019.11.0498.

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To withstand the rising demand for energy while fuel and chemical energy are becoming rare, the development in the production of solar energy has become a necessity. There is a variety of solar cells; among them, thin-film photovoltaics is more popular because of low-cost production and good-efficiency. Nowadays, copper oxide has become popular to make thin film layers like CZTS, CIGS, etc. Unfortunately, the efficiency of these thin films is less than 20%. In order to obtain better efficacy, an investigation of the layers of thin films is needed. This research discussed the properties of copper and its oxides. In case of making the thin film layers, potentiostat electro-deposition was the chosen method where bath composition of CuSO4.5H2O solution, temperature, time, potential difference were the variable parameters. The best-deposited layers were obtained in 0.2 M concentration, 40 minutes, -0.5 V potential difference and 65oC. Hence, physical properties like thickness and hardness, and characterisation properties like X-ray diffractometry (XRD), scanning electron microscopy (SEM), UV-Vis spectrometry are observed to compare cupric oxide (CuO) and cuprous oxide (Cu2O) thin films. CuO thin film shows better stability and rigidity than the Cu2O thin film. But the thin film layer of cuprous oxide illustrates good homogeneity and nodular form. From the test mentioned above data, band gap has been measured for each deposited film, and the CuO thin film layer is raked out having a better band energy gap than the Cu2O thin film layer.

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Dissertations / Theses on the topic "Oxides. Solar cells. Thin films Thin films"

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Gold, Scott Alan. "Nitrogen incorporation in thin silicon oxide films for passivation of silicon solar cell surfaces." Thesis, Georgia Institute of Technology, 1999. http://hdl.handle.net/1853/11101.

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Liu, Qiudi. "Optimization and Characterization of Transparent Oxide Layers for CIGS solar cells fabrication." Connect to full text in OhioLINK ETD Center, 2007. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=toledo1187376131.

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Thesis (M.S.)--University of Toledo, 2007.
Typescript. "Submitted as partial fulfillment of the requirements for the Masters of Science Degree in Physics." "A thesis entitled"--at head of title. Bibliography: leaves 99-102.

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Zhang, Rong. "Zinc Oxide Thin Films for Dye-Sensitized Solar Cell Applications." Miami University / OhioLINK, 2007. http://rave.ohiolink.edu/etdc/view?acc_num=miami1186016777.

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Sporar, Daniel. "Sputter Deposition of Iron Oxide and Tin Oxide Based Films and the Fabrication of Metal Alloy Based Electrodes for Solar Hydrogen Production." Connect to Online Resource-OhioLINK, 2007. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=toledo1183481021.

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Thesis (M.S.Ch.E.)--University of Toledo, 2007.
Typescript. "Submitted as partial fulfillment of the requirements for The Master of Science degree in Chemical Engineering." Bibliography: leaves 72-77.

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Lima, Francisco Anderson de Sousa. "Application of transition-metal-oxide-based nanostructured thin films on third generation solar cells." reponame:Repositório Institucional da UFC, 2015. http://www.repositorio.ufc.br/handle/riufc/14584.

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LIMA, F. A. S. Application of transition-metal-oxide-based nanostructured thin films on third generation solar cells. 2015. 225 f. Tese (Doutorado em Ciência de Materiais) – Centro de Tecnologia, Universidade Federal do Ceará, Fortaleza, 2015.
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One of the greatest challenges of our time is to devise means to provide energy in a sustainable way to attend an exponentially growing demand. The energy demand is expected to grow 56% by 2040. In this context, the use of clean and sustainable sources of energy is imperative. Among these sources, solar energy is the only one which can meet the total world energy requirement even considering such large growth in demand. The solar power incident on the Earth's surface every second is equivalent to 4 trillion 100-watt light bulbs. Photovoltaic solar cells are one of several ways to harness solar energy. These cells convert solar energy directly into electricity. Commercial photovoltaic devices are already a reality, but their share of the world energy matrix is still quite small, mainly due to the high costs. Next generation photovoltaics open a number of new possibilities for photovoltaic energy applications that can potentially decrease the overall cost of energy production. Transition metal semiconductor oxides are promising materials that can be produced by low cost methods and o er interesting new features. The use of these materials in next generation photovoltaics is therefore a very promising and interesting application. In this thesis work zinc, titanium and vanadium oxides were used in next generation solar cells. Thin lms of zinc oxide were synthesized by the low cost and environmentally friendly techniques of electrodeposition and hydrothermal synthesis and applied as working electrodes in highly e cient dye sensitized solar cells (DSSCs). The lms were characterized by structural and optical techniques while the cells were tested by current vs: voltage and quantum e ciency measurements. The e ciencies of these cells were as high as 2.27% using ZnO thin lms without any post deposition treatment. Moreover, natural dyes extracted from plants of northeastern Brazil were applied as sensitizers in DSSCs assembled with commercial available TiO 2 as working electrode. The natural dyes were extracted employing very simple methods and were characterized by XPS and UPS techniques. Their band alignments were shown to be compatible with the TiO 2 as well as with the mediator electrolyte. The e ciency of DSSCs sensitized with natural dyes were as high as 1.33%. Finally, water based V 2 O 5 was used as hole transport medium (HTM) in conventional organic solar cells (OSCs) and ITO-free, plastic OSCs. The results obtained with V 2 O 5 were compared with the results obtained from cells assembled with PEDOT:PSS, which is the most used HTM. This comparison showed that the use of V 2 O 5 as HTM can lead to more e cient OSCs. The stability of these devices were evaluated by tests applying the ISOS standards ISOS-D-1, ISOS-L-1 and ISOS-O-1. A UV- lter and a protective graphene oxide (GO) layer were employed seeking to improve the stability of OSCs. The combination of both UV- lter and GO protective layer was shown to be the most e ective way to improve the stability of these devices
Um dos maiores desa os do nosso tempo e desenvolver formas para fornecer energia de forma sustent avel para atender uma demanda que cresce exponencialmente e que dever a crescer 56% at e 2040. Neste contexto, o uso de fontes limpas e sustent aveis de energia e um imperativo. Entre essas fontes, a energia solar e a unico que pode satisfazer a ne- cessidade total de energia do mundo, mesmo considerando o crescimento na demanda. A pot^encia solar incidente na superf cie da Terra a cada segundo e equivalente a 4 trilh~oes de l^ampadas de 100 watts. C elulas solares fotovoltaicas s~ao uma das v arias maneiras de aproveitar a energia solar, convertendo-a diretamente em eletricidade. Dispositivos com- erciais fotovoltaicos j a s~ao uma realidade, mas a sua participa c~ao na matriz energ etica mundial ainda e muito pequena, principalmente devido aos seus custos elevados. C elulas fotovoltaicas de nova gera c~ao abrem uma s erie de novas possibilidades para aplica c~oes de energia fotovoltaica que pode diminuir o custo total de produ c~ao de energia. Oxidos semicondutores de metais de transi c~ao s~ao materiais promissores que podem ser produzi- dos atrav es de m etodos de baixo custo e que possuem caracter sticas interessantes. Por conseguinte, o uso destes materiais em energia fotovoltaica de pr oxima gera c~ao se apre- senta com uma aplica c~ao promissora. Nesta tese de doutorado oxidos de zinco, tit^anio e van adio foram utilizados em c elulas solares de pr oxima gera c~ao. Filmes nos de oxido de zinco foram sintetizados por eletrodeposi c~ao e s ntese hidrot ermica. Os lmes foram apli- cados como eletrodos de trabalho em c elulas solares sensibilizadas por corante (DSSCS) altamente e cientes. Os lmes foram caracterizados por t ecnicas estruturais e oticas en- quanto que as c elulas foram testadas por medidas de corrente vs: voltagem e de e ci^encia qu^antica. A e ci^encia dessas c elulas atingiu 2,27% utilizando lmes nos de ZnO sem qualquer tratamento p os-deposi c~ao. Al em disso, corantes naturais extra dos de plan- tas do nordeste do Brasil foram aplicados como sensibilizadores em DSSCs montadas com TiO 2 comercial utilizado como eletrodo de trabalho. Os corantes naturais foram extra das empregando m etodos simples e foram caracterizados por espectroscopia de fotoel etrons excitados por raios X e por radia c~ao ultravioleta, XPS e UPS respectivamente. Seus alin- hamentos de banda se mostraram compat veis com o TiO 2 e com o eletrodo de regenera c~ao. A e ci^encia das DSSCs sensibilizadas com corantes naturais chegou a 1,33%. Finalmente, V 2 O 5 a base de agua foi usado como material transportador de buracos (HTM) em c elulas solares org^anicas (OSCs) convencionais e OSCs de pl astico constru das sem ITO. Os re- sultados obtidos com V 2 O 5 foram comparados com os resultados de c elulas constru das com PEDOT:PSS, que e o HTM mais utilizado. Esta compara c~ao revelou que o uso de V 2 O 5 como HTM pode levar a OSCs mais e cientes. A estabilidade destes dispositivos foi avaliada por testes aplicando os padr~oes ISOS-D-1, ISOS-L-1 e ISOS-O-1. O uso de ltros ultravioleta e de uma camada protetora de oxido de grafeno reduzido foi testado com o intuito de melhorar a estabilidade desses dispositivos. O uso de uma combina c~ao de ambos se mostrou a forma mais efetiva de melhorar a estabilidade das OSCs

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Bowers, Norman Mark. "Metal oxide nanocrystalline thin films as buffer layers in organic/ hybrid solar cells." University of Western Cape, 2019. http://hdl.handle.net/11394/7698.

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>Magister Scientiae - MSc
Without reverting to encapsulation, organic bulk - heterojunction solar cells can be protected from the oxidation of the highly reactive low work function cathode metal electrode, by the deposition of metal oxide buffer layers onto an indium-tin oxide (ITO) substrate. The zinc-oxide (ZnO) or titanium dioxide (TiO2) layer can serve as an electron collecting contact. In such a case the ordering of layer deposition is inverted from the traditional layer sequencing, using an additional effect of the metal oxide layer acting as a hole blocking contact

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Macaraig, Lea Cristina De Jesus. "Studies on Surface Modified Metal Oxides Nanofibers and Thin Films for Solar Energy Conversion and Storage." Kyoto University, 2013. http://hdl.handle.net/2433/180445.

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Tahhan, Abdulla. "Energy performance enhancement of crystalline silicon solar cells." Thesis, Brunel University, 2016. http://bura.brunel.ac.uk/handle/2438/14503.

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The work in this thesis examines the effects of the application of oxide coatings on the performance of the single crystalline silicon photovoltaic solar cells. A variety of potential oxide materials for solar cells performance enhancement are investigated. These films are silicon oxide, titanium oxide and rare earth ion-doped gadolinium oxysulfide phosphor. This study compares the electrical characteristics, optical properties and surface chemical composition of mono-crystalline silicon cells before and after coating. The first study investigates the potential for using single and double layers of silicon oxide films produced by low-temperature Plasma Enhanced Chemical Vapour Deposition (PECVD) using tetramethylsilane as a silicon precursor and potassium permanganate oxidising agent for efficiency enhancement of solar cells at low manufacturing cost. Deposition of the films contributes to the increase of the conversion energy of the solar cells on one hand while the variety of colours obtained in this study can be of great importance for building-integrated photovoltaic application on the other hand. The obtained results demonstrated a relative enhancement of 3% in the conversion efficiency of the crystalline silicon solar cell. In the second study, the effects of using a single layer of titanium oxide and a stack of silicon oxide and titanium oxide on the performance of solar cell are demonstrated. Moreover, this study shows the use of different sputtering configurations and oxidation methods. The experimental results showed a relative enhancement of 1.6% for solar cells coated with a stack of silicon oxide/titanium oxide. In the third study, silicon cells were coated with a luminescent layer consisting of down-converting phosphor, gadolinium oxysulfide doped with erbium and terbium, and a polymeric binder of EVA using doctor-blade screen printing technique. A relative enhancement of 4.45% in the energy conversion efficiency of PV solar cell was achieved. Also, the effects of combining silicon oxide layers together with the luminescent composite are also presented in this study.

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Shantheyanda, Bojanna P. "Characterization of aluminum doped zinc oxide thin films for photovoltaic applications." Master's thesis, University of Central Florida, 2010. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/4538.

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Growing demand for clean source of energy in the recent years has increased the manufacture of solar cells for converting sun energy directly into electricity. Research has been carried out around the world to make a cheaper and more efficient solar cell technology by employing new architectural designs and developing new materials to serve as light absorbers and charge carriers. Aluminum doped Zinc Oxide thin film, a Transparent conductive Oxides (TCO) is used as a window material in the solar cell these days. Its increased stability in the reduced ambient, less expensive and more abundance make it popular among the other TCO's. It is the aim of this work to obtain a significantly low resistive ZnO:Al thin film with good transparency. Detailed electrical and materials studies is carried out on the film in order to expand knowledge and understanding. RF magnetron sputtering has been carried out at various substrate temperatures using argon, oxygen and hydrogen gases with various ratios to deposit this polycrystalline films on thermally grown SiO[sub]2 and glass wafer. The composition of the films has been determined by X-ray Photoelectron Spectroscopy and the identification of phases present have been made using X-ray diffraction experiment. Surface imaging of the film and roughness calculations are carried out using Scanning Electron Microscopy and Atomic Force Microscopy respectively. Determination of resistivity using 4-Probe technique and transparency using UV spectrophotometer were carried out as a part of electrical and optical characterization on the obtained thin film. The deposited thin films were later annealed in vacuum at various high temperatures and the change in material and electrical properties were analyzed.
ID: 028916634; System requirements: World Wide Web browser and PDF reader.; Mode of access: World Wide Web.; Thesis (M.S.)--University of Central Florida, 2010.; Includes bibliographical references (p. 74-76).
M.S.
Masters
School of Electrical Engineering and Computer Science
Engineering and Computer Science

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Carreras, Seguí Paz. "Doped and multi-compound ZnO-based transparent conducting oxides for silicon thin film solar cells." Doctoral thesis, Universitat de Barcelona, 2013. http://hdl.handle.net/10803/109157.

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The objective of the present work is to provide a better understanding of magnetron sputtered transparent conducting oxides based on ZnO in order to use them as electrodes in thin film silicon solar cells at the Grup d'Energia Solar of the Universitat de Barcelona. This thesis presents the properties of magnetron sputtered aluminium and gallium doped ZnO as well as the properties of multi-compound materials deposited by the co-sputtering of zinc oxide and indium tin oxide. The application of ZnO based transparent conducting oxides to the back reflector of pin amorphous solar cells is also discussed. A set of aluminium doped zinc oxide layers were deposited under different substrate temperature and discharge power. The structural, electrical and optical properties were characterised and discussed. The higher substrate temperatures and discharge powers used during deposition led to highly transparent layers in the visible range with lower resistivities. The polycrystalline layers were oriented with the c-axis perpendicular to the substrate surface and the crystalline quality of the layers improved at higher temperatures and powers. A remarkable increase in mobility was found for temperatures above 300°C and the carrier concentration also rose with temperature reaching 3.71x1020 cm-3 at 420°C. The most remarkable feature found at higher deposition power was the increase in deposition rate (from 0.9 to 9 nm/min). By means of a high temperature (650°C) annealing process under a capping layer of silicon or alumina, the mobility of aluminium doped zinc oxide layers was considerably raised achieving 68.5 cm2V-1s-1. This process led also to more transparent layers in the near infrared as well as in the ultraviolet part of the spectrum. Gallium doped zinc oxide films were deposited in order to investigate the suitability of gallium as a dopant in zinc oxide layers. Highly transparent layers with higher carrier concentrations but lower mobilities compared to aluminium doped zinc oxide were obtained. The dependence of the layer properties on the pressure, doping concentration, substrate temperature and oxygen volume concentration during deposition were studied in order to find the adequate layer to be applied as electrode in thin film solar cells. 4 wt.% Ga2O3 doping concentration was found to be optimal for the production of highly conductive ZnO:Ga layers with a high band gap energy. The incorporation of oxygen gas during the sputter deposition led to more transparent layers at wavelengths longer than 1100 nm, but was found to be detrimental for the electrical properties of the studied layers. By means of co-sputtering, a set of multi-compound layers formed by Zn-In-Sn-O were deposited and carefully characterised. The resulting layers were studied as a function of the Zn content ratio, which varied between 17.1 to 67.3%. The layers were amorphous in nature but presented embedded nanometric crystals. The incorporation of Zn cations into an indium tin oxide matrix favoured the transmittance but did not modify the mobility. The carrier concentration was found to decrease resulting in an increase in resistivity. The electronic band structure was investigated by means of photoelectron spectroscopy. The measurements showed that, with an increase in Zn concentration, the oxygen vacancy concentration of the surface increased resulting in a degenerately n-doped surface layer. The work function of the material was determined by low intensity X-ray photoelectron spectroscopy and the values varied between 4.7 and 4.3 eV with the variation of Zn content. The final experiments were focussed on the application of ZnO layers in the back reflectors of pin amorphous silicon solar cells. Trials were performed onto pin structures deposited at T-Solar Global SA and the Universitat de Barcelona. The cells deposited at T-Solar were long exposed to air before a back reflector could be deposited and evidence for the formation of a thin silicon oxide layer at the interface was obtained. The oxide layer was removed using acid etching in dilute HF, but an analysis by X-ray photoelectron spectroscopy showed that the cleaning step resulted in an important amount of carbon contamination on the surface. Both, the silicon oxide and the carbon layer led to devices with S-shaped J-V curves. Later, the n-type interface was protected by a thin ZnO:Al layer at T-Solar to avoid oxidation during transportation. However, the existence of this thin ZnO:Al protective layer determined the growth of the subsequently deposited layers. Thus, the deposition of ZnO layers under different conditions led to similar results. Finally, different back reflectors were tried over the solar cells fabricated at UB. Aluminium and gallium doped zinc oxide layers were deposited on amorphous silicon pin structures, and a clear improvement in performance with respect to devices with only a metal layer as back reflector was observed. Similar performances were observed when Ga doped ZnO or Al doped ZnO was used in the back reflector. It showed that both gallium and aluminium were suitable dopants for the ZnO to be applied in the back reflector.
L'objectiu d'aquest treball rau en l'estudi i optimització dels òxids conductors transparents basats en l'òxid de zinc. Aquests materials, que s'han dipositat mitjançant polvorització catòdica magnetró, es van estudiar amb la finalitat d'emprar-los com elèctrodes en cèl•lules solars de silici en capa prima al Grup d'Energia Solar de la Universitat de Barcelona. En aquesta tesi es presenten les propietats de l'òxid de zinc dopat amb alumini o amb gal•li, així com les propietats de multi-compostos dipositats a partir de la co-polvorització catòdica d'òxid de zinc i d'òxid d'indi dopat amb estany. També es discuteix l'aplicació d'òxids conductors transparents basats en l'òxid de zinc al reflector posterior de cèl•lules solars de silici amorf amb estructura tipus pin. S’ha trobat que l’òxid de zinc dopat amb alumini, a altes temperatures de substrat i altes potències, presenta una elevada transmitància òptica i una baixa resistivitat. La mobilitat de les capes augmentà considerablement fins assolir 68.5 cm2V-1s-1 mitjançant l'aplicació de tractaments tèrmics a alta temperatura previ dipòsit d'una capa protectora de silici amorf o d'alúmina. Pel cas de l'òxid de zinc dopat amb gal•li s'han obtingut una sèrie de capes altament transparents i amb concentracions de portadors superiors, però amb mobilitats inferiors que les de capes dopades amb alumini. Mitjançant co-polvorització d’òxid de zinc i òxid d’indi dopat amb estany s’han obtingut capes amorfes del multi-compost Zn-In-Sn-O amb un contingut de zinc que varia entre el 17.1 i el 67.3%. La incorporació del zinc a l'òxid d'indi dopat amb estany afavoreix l'increment de la transmitància, sense que la mobilitat de les capes es vegi afectada. En canvi, la concentració de portadors disminueix amb la incorporació de Zn. Comparant l'ús del gal•li i de l'alumini com a dopants de l'òxid de zinc del reflector posterior de cèl•lules de silici amorf tipus pin, s'ha observat una gran similitud en el comportament dels dispositius. Això ens ha portat a la conclusió que ambdós materials són adients per ser emprats com a reflectors posteriors.

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Books on the topic "Oxides. Solar cells. Thin films Thin films"

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Hüpkes, Jürgen. Untersuchung des reaktiven Sputterprozesses zur Herstellung von aluminiumdotierten Zinkoxide-Schichten für Silizium-Dünnschicht-solarzellen. Jülich: Forschungszentrum Jülich, Zentralbibliothek, 2006.

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(Society), SPIE, ed. Thin film solar technology III. Bellingham: SPIE, 2011.

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Advanced characterization techniques for thin film solar cells. Weinheim: Wiley-VCH-Verl., 2011.

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Bosio, Alessio. Thin film solar cells: Current status and future trends. Hauppauge, N.Y: Nova Science Publishers, 2009.

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Bosio, Alessio. Thin film solar cells: Current status and future trends. Hauppauge, N.Y: Nova Science Publishers, 2011.

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Bo mo tai yang dian chi guan jian ke xue he ji shu: Key science and technology of thin film solar cells. Shanghai: Shanghai ke xue ji shu chu ban she, 2013.

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Chubb, Donald L. High efficiency thermal to electric energy conversion using selective emitters and spectrally tuned solar cells. [Washington, DC]: National Aeronautics and Space Administration, 1992.

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Chubb, Donald L. High efficiency thermal to electric energy conversion using selective emitters and spectrally tuned solar cells. [Washington, DC]: National Aeronautics and Space Administration, 1992.

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Handbook of nanostructured thin films and coatings. Boca Raton: CRC Press, 2010.

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service), ScienceDirect (Online, ed. Cu(InGa)Se2 based thin film solar cells. London: Academic, 2009.

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Book chapters on the topic "Oxides. Solar cells. Thin films Thin films"

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Lokhande, V. C., C. H. Kim, A. C. Lokhande, Chandrakant D. Lokhande, and T. Ji. "Metal Oxides for Perovskite Solar Cells." In Chemically Deposited Nanocrystalline Metal Oxide Thin Films, 197–233. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-68462-4_8.

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Nkele, Agnes Chinecherem, Sabastine Ezugwu, Mutsumi Suguyima, and Fabian I. Ezema. "Structural and Electronic Properties of Metal Oxides and Their Applications in Solar Cells." In Chemically Deposited Nanocrystalline Metal Oxide Thin Films, 147–63. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-68462-4_6.

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Menéndez-Flores, Víctor Manuel. "A Visible Perception from the Nano-world: Visible Light-Active Metal Oxide Nanomaterials in Photocatalysis and Quantum Dot Engineering in Solar Cells." In Oxide Thin Films, Multilayers, and Nanocomposites, 303–16. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-14478-8_14.

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Cho, Han Na, Jang Woo Lee, Su Ryun Min, and Chee Won Chung. "Characteristics of Indium Zinc Oxide Thin Films Deposited by Radio Frequency Reactive Magnetron Sputtering for Solar Cells Application." In Solid State Phenomena, 999–1002. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/3-908451-31-0.999.

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Yu, Jing, Wolfgang P. Weinhold, Volker Sittinger, and Carsten Diegelmann. "Optimization of Energy Efficiency of Transparent Conducting Oxide Thin Films in the Field of Solar Cells by Microtribological Rating." In Advanced Tribology, 716–17. Berlin, Heidelberg: Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-642-03653-8_233.

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Fu, Kunwu, Anita Wing Yi Ho-Baillie, Hemant Kumar Mulmudi, and Pham Thi Thu Trang. "Perovskites Thin Films for Photovoltaic Applications." In Perovskite Solar Cells, 3–38. Includes bibliographical references and index.: Apple Academic Press, 2019. http://dx.doi.org/10.1201/9780429469749-2.

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Tyona, M. D. "Doped Metal Oxide Thin Films for Dye-Sensitized Solar Cell and Other Non-Dye-Loaded Photoelectrochemical (PEC) Solar Cell Applications." In Chemically Deposited Nanocrystalline Metal Oxide Thin Films, 235–60. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-68462-4_9.

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Lane, Paul A. "Solid State Organic Solar Cells." In Organic Thin Films for Photonic Applications, 185–98. Washington, DC: American Chemical Society, 2010. http://dx.doi.org/10.1021/bk-2010-1039.ch013.

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Tiwari, Sanjay, and Ralph Gebauer. "Optical Optimization of Thin-Film Polymer Solar Cells." In Recent Advances in Thin Films, 507–47. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-6116-0_17.

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Srivastava, Sanjay K., Prashant Singh, Avritti Srivastava, P. Prathap, Sushil Kumar, C. M. S. Rauthan, and D. K. Aswal. "Nanostructured Black Silicon for Efficient Thin Silicon Solar Cells: Potential and Challenges." In Recent Advances in Thin Films, 549–623. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-6116-0_18.

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Conference papers on the topic "Oxides. Solar cells. Thin films Thin films"

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Dominguez, A., Ateet Dutt, O. de Melo, and G. Santana. "Molybdenum oxide thin films for heterojunction solar cells." In 2017 IEEE 44th Photovoltaic Specialists Conference (PVSC). IEEE, 2017. http://dx.doi.org/10.1109/pvsc.2017.8366104.

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Afanasjev, V. P., G. A. Konoplev, D. A. Chigirev, N. V. Mukhin, E. I. Terukov, and E. E. Terukova. "The formation of zinc and copper oxides thin films for heterostructure solar cells." In SPIE Photonics Europe, edited by Ralf B. Wehrspohn, Andreas Gombert, and Alexander N. Sprafke. SPIE, 2016. http://dx.doi.org/10.1117/12.2227421.

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Chu, J. B., H. B. Zhu, X. B. Xu, Z. Sun, Y. W. Chen, and S. M. Huang. "RF magnetron sputtered indium tin oxide thin films for application in solar cells." In 2008 2nd IEEE International Nanoelectronics Conference. IEEE, 2008. http://dx.doi.org/10.1109/inec.2008.4585588.

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Lee, Hyeonseok, Yu-Ting Huang, and Shien-Ping Feng. "Nickel Oxide Thin Films by Radio Frequency Sputter for Inverted Perovskite Solar Cells." In 2017 IEEE 44th Photovoltaic Specialists Conference (PVSC). IEEE, 2017. http://dx.doi.org/10.1109/pvsc.2017.8366050.

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Wiranwetchayan, O., Z. Liang, Q. Zhang, G. Z. Cao, and P. Singjai. "The roles of thin dense metal oxide films in inverted hybrid solar cells." In 2011 IEEE Nanotechnology Materials and Devices Conference (NMDC 2011). IEEE, 2011. http://dx.doi.org/10.1109/nmdc.2011.6155398.

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Sharma, Sugandha, and Avinashi Kapoor. "Structural and optical studies of cadmium doped zinc oxide thin films for solar cells." In 2016 3rd International Conference on Emerging Electronics (ICEE). IEEE, 2016. http://dx.doi.org/10.1109/icemelec.2016.8074627.

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Richter, Alexei, Lei Zhao, Friedhelm Finger, and Kaining Ding. "Microstructure model for nanocrystalline hydrogenated silicon oxide thin films in silicon heterojunction solar cells." In 2015 IEEE 42nd Photovoltaic Specialists Conference (PVSC). IEEE, 2015. http://dx.doi.org/10.1109/pvsc.2015.7356217.

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Jain, Sukriti, and Pritpal Singh. "Electrodeposition and Characterization of Very Thin Film II-VI Compounds for Novel Superlattice Solar Cells." In ASME 2010 4th International Conference on Energy Sustainability. ASMEDC, 2010. http://dx.doi.org/10.1115/es2010-90239.

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Abstract:

Thin films of lead telluride (PbTe) and zinc telluride (ZnTe) have been electrodeposited on indium tin oxide (ITO)-coated glass substrates. Uniform dense films of ∼ 100 nm have been obtained for both materials. The electrochemical deposition procedures for fabricating these films are described. The as-deposited films have been characterized by scanning electron microscopy, energy dispersive spectroscopy, and optical absorption spectrophotometry. Multi layer structures, up to 3 layers, of ZnTe/PbTe films, have been fabricated.

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Hongsingthong, Aswin, Taweewat Krajangsang, Bancha Janthong, Porponth Sichanugrist, and Makoto Konagai. "Effect of high-haze zinc oxide films fabricated on soda-lime glass substrate for thin-film silicon solar cells." In 2011 37th IEEE Photovoltaic Specialists Conference (PVSC). IEEE, 2011. http://dx.doi.org/10.1109/pvsc.2011.6186073.

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Kim, Dong-Ho, Jae-Wook Kang, Hye-Ri Kim, Yong-Jin Kang, Sun-Young Park, and Yong-Soo Jeong. "Sputter deposited p-type nickel oxide thin films as an anode buffer layer in organic solar cells." In 2011 37th IEEE Photovoltaic Specialists Conference (PVSC). IEEE, 2011. http://dx.doi.org/10.1109/pvsc.2011.6186164.

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Reports on the topic "Oxides. Solar cells. Thin films Thin films"

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Klie, Robert. How grain boundaries affect the efficiency of poly-CdTe solar-cells: A fundamental atomic-scale study of grain boundary dislocation cores using CdTe bi-crystal thin films. Office of Scientific and Technical Information (OSTI), October 2016. http://dx.doi.org/10.2172/1329940.

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Improved Transparent Conducting Oxides Boost Performance of Thin-Film Solar Cells (Fact Sheet). Office of Scientific and Technical Information (OSTI), February 2011. http://dx.doi.org/10.2172/1009294.

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