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1

Huang, Jin Hua, Rui Qin Tan, Jia Li, Yu Long Zhang, Ye Yang, and Wei Jie Song. "Thermal Stability of Aluminum Doped Zinc Oxide Thin Films." Materials Science Forum 685 (June 2011): 147–51. http://dx.doi.org/10.4028/www.scientific.net/msf.685.147.

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Transparent conductive oxides are key electrode materials for thin film solar cells. Aluminum doped zinc oxide has become one of the most promising transparent conductive oxide (TCO) materials because of its excellent optical and electrical properties. In this work, aluminum doped zinc oxide thin films were prepared using RF magnetron sputtering of a 4 at% ceramic target. The thermal stability of aluminum doped zinc oxide thin films was studied using various physical and structural characterization methods. It was observed that the electrical conductivity of aluminum doped zinc oxide thin films deteriorated rapidly and unevenly when it was heated up to 350 °C. When the aluminum doped zinc oxide thin films were exposed to UV ozone for a short time before heating up, its thermal stability and large area homogeneity were significantly improved. The present work provided a novel method for improving the durability of aluminum doped zinc oxides as transparent conductive electrodes in thin film solar cells.
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2

Singh, Girjesh, S. B. Shrivastava, Deepti Jain, Swati Pandya, and V. Ganesan. "Effect of Molarity of Precursor Solution on Nanocrystalline Zinc Oxide Thin Films." Defect and Diffusion Forum 293 (August 2009): 99–105. http://dx.doi.org/10.4028/www.scientific.net/ddf.293.99.

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During the last two decades, the use of transparent conducting films of non-stoichiometric and doped metallic oxides for the conversion of solar energy into electrical energy has assumed great significance. A variety of materials, using various deposition techniques, has been tried for this purpose [1-3]. Among these various materials, zinc oxide (ZnO) is one of the prominent oxide semiconductors suitable for photovoltaic applications because of its high electrical conductivity and optical transmittance in the visible region of the solar spectrum [4]. Furthermore, thin films of ZnO have shown good chemical stability against hydrogen plasma, which is of prime importance in a-Si:H-based solar-cell fabrication. Thus, zinc oxide can serve as a good candidate for replacing SnO2 and indium tin oxide (ITO) films in Si:H-based solar cells. One of the outstanding features of ZnO is its large excitonic binding energy, i.e. 60meV, leading to the existence of excitons at room temperature and even at higher temperatures [5-8]. These unique characteristics have generated a wide range of applications of ZnO. For example, gas sensors [9], surface acoustic devices [10], transparent electrodes and solar cells. Many techniques are used for preparing the transparent conducting ZnO films, such as RF sputtering [11], evaporation [12], chemical vapour deposition [13], ion beam sputtering [14] and spray pyrolysis [15–18]. Among these, the spray pyrolysis technique has attracted considerable attention due to its simplicity and large-scale production combined with low-cost fabrication. By using this technique, one can produce large-area coatings without any need for ultra-high vacuum. Thus, the capital cost and the production cost of high-quality zinc oxide semiconductor thin films are lowest among all other techniques. In the present work, we have synthesized ZnO films by using the spray pyrolysis technique. A number of films have been prepared by changing the molarity of the precursor solution. The prepared films have been characterized with regard to their structural, morphological and electrical properties.
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3

Du, Wenhan, Jingjing Yang, Chao Xiong, Yu Zhao, and Xifang Zhu. "Preferential orientation growth of ITO thin film on quartz substrate with ZnO buffer layer by magnetron sputtering technique." International Journal of Modern Physics B 31, no. 16-19 (July 26, 2017): 1744065. http://dx.doi.org/10.1142/s0217979217440659.

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In order to improve the photoelectric transformation efficiency of thin-film solar cells, one plausible method was to improve the transparent conductive oxides (TCO) material property. In-doped tin oxide (ITO) was an important TCO material which was used as a front contact layer in thin-film solar cell. Using magnetron sputtering deposition technique, we prepared preferential orientation ITO thin films on quartz substrate. XRD and SEM measurements were used to characterize the crystalline structure and morphology of ITO thin films. The key step was adding a ZnO thin film buffer layer before ITO deposition. ZnO thin film buffer layer increases the nucleation center numbers and results in the (222) preferential orientation growth of ITO thin films.
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4

Khan, Sadaf Bashir, Syed Irfan, Zheng Zhuanghao, and Shern Long Lee. "Influence of Refractive Index on Antireflectance Efficiency of Thin Films." Materials 12, no. 9 (May 7, 2019): 1483. http://dx.doi.org/10.3390/ma12091483.

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In today’s world, scientific development is tremendously strengthened by imitating natural processes. This development remarkably validates progressive and efficient operation of multifunctional thin films in variable ecological circumstances. We use TFCalc thinfilm software, a reliable and trustworthy simulation tool, to design antireflective (AR) coatings for solar cells that can operate in varying environmental conditions and can be functional according to user-defined conditions. Silicon nearly reflects 36% light in the 550 nm wavelength region, causing a significant loss in solar cell efficiency. We used silicon as the substrate on which we designed and fabricated a trilayer inorganic oxide AR thin films, and this reduced it reflectance to <4% in the 300~800 nm wavelength range. Because of their distinguishing physical physiognomies, we used a combination of different inorganic oxides, comprising high-, low-, and medium-refractive indices, to model AR coatings in the desired wavelength range. Experimental implementation of the designed AR thin films in the present study unlocks new techniques for production of competent, wideband-tunable AR coatings that are applicable in high-performance photovoltaic applications.
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5

Lee, Jin Woo, Yun Hae Kim, and Chang Wook Park. "Electrical and Optical Properties of ZnO:Ag Thin-Films Depend on Lamination Formation by DC Magnetron Sputtering." Advanced Materials Research 1110 (June 2015): 211–17. http://dx.doi.org/10.4028/www.scientific.net/amr.1110.211.

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Transparent conductive oxides such as Impurity doped indium oxides, tin oxides, zinc oxide systems are widely used in the field of optoelectronics such as Photo voltaic solar cells, Flat panel displays. Recently in case of the ZnO / Ag Multilayer thin films, doping Ag films on the ZnO layer and ZnO deposited on top of it a way that has been used. However, if thin film applied to the semiconductor, because of lamination of various forms, characteristics of stacking sequence and thin film layer is a need for research. In this study, using DC magnetron sputteirng how the stacking sequence of the film and the transparent operation of various process variables, the possibility of the application to electronic devices was confirmed.
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6

Mohamad, S. A., Wan Jeffrey Basirun, Z. A. Ibrahim, A. K. Arof, and Mehdi Ebadi. "Controlled Potential Electrodeposition and Characterization of ZnTe Thin Films on Indium Tin Oxides." Advanced Materials Research 264-265 (June 2011): 726–31. http://dx.doi.org/10.4028/www.scientific.net/amr.264-265.726.

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Electrodeposition of ZnTe thin films by controlled potential method from aqueous solutions on ITO were done to investigate characteristics suitable as a window material in solar cells technology. The influence deposition of potential towards the Zn:Te ratio and the crystallinity are discussed. The electrodeposited films were investigated by using X-Ray Diffraction and Energy Dispersive Analysis of X-Ray. The Te content decreases at higher deposition potentials.
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7

Nordseth, Ørnulf, Irinela Chilibon, Bengt Gunnar Svensson, Raj Kumar, Sean Erik Foss, Cristina Vasiliu, Laurentiu Baschir, et al. "Characterization of Cuprous Oxide Thin Films for Application in Solar Cells." Diffusion Foundations 22 (May 2019): 65–73. http://dx.doi.org/10.4028/www.scientific.net/df.22.65.

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Cuprous oxide (Cu2O) has a high optical absorption coefficient and favourable electrical properties, which make Cu2O thin films attractive for photovoltaic applications. Using reactive radio-frequency magnetron sputtering, high quality Cu2O thin films with good carrier transport properties were prepared. This paper presents the characteristics of Cu2O thin films that were sputter deposited on quartz substrates and subjected to post-deposition rapid thermal annealing. The thickness of the thin films and the optical constants were determined by ellipsometry spectroscopy (SE). The optical transmittance increased in lower wavelength region after annealing at 900 ̊C in rapid thermal annealing (RTA). The structural and morphological properties of the Cu2O thin films were investigated by electronic scanning microscopy (SEM) and atomic force microscopy (AFM), whereas elemental analysis was performed by X-ray fluorescence spectroscopy (XRF). The carrier mobility, carrier density and film resistivity were changed after post-deposition rapid thermal annealing from respectively ~14 cm2/Vs, ~2.3 x 1015 cm-3 and ~193 Ωcm for the as-deposited Cu2O film to ~49 cm2/Vs, ~5.0 x 1014 cm-3 and ~218 Ωcm for the annealed Cu2O film. The investigation suggests that the sputter-deposited Cu2O thin films have good potential for application as absorber layers in solar cells.
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8

Emeka, Nwanna Charles, Patrick Ehi Imoisili, and Tien-Chien Jen. "Preparation and Characterization of NbxOy Thin Films: A Review." Coatings 10, no. 12 (December 17, 2020): 1246. http://dx.doi.org/10.3390/coatings10121246.

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Niobium oxides (NbO, NbO2, Nb2O5), being a versatile material has achieved tremendous popularity to be used in a number of applications because of its outstanding electrical, mechanical, chemical, and magnetic properties. NbxOy films possess a direct band gap within the ranges of 3.2–4.0 eV, with these films having utility in different applications which include; optical systems, stainless steel, ceramics, solar cells, electrochromic devices, capacitor dielectrics, catalysts, sensors, and architectural requirements. With the purpose of fulfilling the requirements of a vast variety of the named applications, thin films having comprehensive properties span described by film composition, morphology, structural properties, and thickness are needed. The theory, alongside the research status of the different fabrication techniques of NbxOy thin films are reported in this work. The impact of fabrication procedures on the thin film characteristics which include; film thickness, surface quality, optical properties, interface properties, film growth, and crystal phase is explored with emphases on the distinct deposition process applied, are also described and discussed.
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9

Wang, Fang-Hsing, Ming-Yue Fu, Chean-Cheng Su, Cheng-Fu Yang, Hua-Tz Tzeng, Han-Wen Liu, and Chung-Yuan Kung. "Improve the Properties of p-i-nα-Si:H Thin-Film Solar Cells Using the Diluted Hydrochloric Acid-Etched GZO Thin Films." Journal of Nanomaterials 2013 (2013): 1–6. http://dx.doi.org/10.1155/2013/495752.

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Gallium-doped zinc oxide (GZO) thin films were deposited on glass, and the process parameters are RF power of 50 W and working pressure of 5 mTorr, and the substrate temperature was changed from room temperature to 300°C. At first, the thickness was around 300 nm by controlling the deposition time. The effects of substrate temperature on the crystallinity, lattice constant (c), carrier mobility, carrier concentration, resistivity, and optical transmission rate of the GZO thin films were studied. The 200°C-deposited GZO thin films had the best crystallinity, the larger carrier concentration and carrier mobility, and the lowest resistivity. For that, the thickness of the GZO thin films was extended to around 1000 nm. Hydrochloric (HCl) acid solutions with different concentrations (0.1%, 0.2%, and 0.5%) were used to etch the surfaces of the GZO thin films, which were then used as the substrate electrodes to fabricate the p-i-nα-Si:H thin-film solar cells. The haze ratio of the GZO thin films increased with increasing HCl concentration, and that would effectively enhance light trapping inside the absorber material of solar cells and then improve the efficiency of the fabricated thin-film solar cells.
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10

Plateau, T. P., M. T. Islam, and N. Islam``. "Potentiostat Electro-Deposited Cuprous Oxide and Cupric Oxide Thin Films for Photovoltaic Use." International Journal of Automotive and Mechanical Engineering 16, no. 2 (July 4, 2019): 6624–33. http://dx.doi.org/10.15282/ijame.16.2.2019.11.0498.

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To withstand the rising demand for energy while fuel and chemical energy are becoming rare, the development in the production of solar energy has become a necessity. There is a variety of solar cells; among them, thin-film photovoltaics is more popular because of low-cost production and good-efficiency. Nowadays, copper oxide has become popular to make thin film layers like CZTS, CIGS, etc. Unfortunately, the efficiency of these thin films is less than 20%. In order to obtain better efficacy, an investigation of the layers of thin films is needed. This research discussed the properties of copper and its oxides. In case of making the thin film layers, potentiostat electro-deposition was the chosen method where bath composition of CuSO4.5H2O solution, temperature, time, potential difference were the variable parameters. The best-deposited layers were obtained in 0.2 M concentration, 40 minutes, -0.5 V potential difference and 65oC. Hence, physical properties like thickness and hardness, and characterisation properties like X-ray diffractometry (XRD), scanning electron microscopy (SEM), UV-Vis spectrometry are observed to compare cupric oxide (CuO) and cuprous oxide (Cu2O) thin films. CuO thin film shows better stability and rigidity than the Cu2O thin film. But the thin film layer of cuprous oxide illustrates good homogeneity and nodular form. From the test mentioned above data, band gap has been measured for each deposited film, and the CuO thin film layer is raked out having a better band energy gap than the Cu2O thin film layer.
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11

Yan, Xia, Selvaraj Venkataraj, and Armin G. Aberle. "Wet-Chemical Surface Texturing of Sputter-Deposited ZnO:Al Films as Front Electrode for Thin-Film Silicon Solar Cells." International Journal of Photoenergy 2015 (2015): 1–10. http://dx.doi.org/10.1155/2015/548984.

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Transparent conductive oxides (TCOs) play a major role as the front electrodes of thin-film silicon (Si) solar cells, as they can provide optical scattering and hence improved photon absorption inside the devices. In this paper we report on the surface texturing of aluminium-doped zinc oxide (ZnO:Al or AZO) films for improved light trapping in thin-film Si solar cells. The AZO films are deposited onto soda-lime glass sheets via pulsed DC magnetron sputtering. Several promising AZO texturing methods are investigated using diluted hydrochloric (HCl) and hydrofluoric acid (HF), through a two-step etching process. The developed texturing procedure combines the advantages of the HCl-induced craters and the smaller and jagged—but laterally more uniform—features created by HF etching. In the two-step process, the second etching step further enhances the optical haze, while simultaneously improving the uniformity of the texture features created by the HCl etch. The resulting AZO films show large haze values of above 40%, good scattering into large angles, and a surface angle distribution that is centred at around 30°, which is known from the literature to provide efficient light trapping for thin-film Si solar cells.
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12

Matysiak, Wiktor, Tomasz Tański, and Marta Zaborowska. "Manufacturing process and optical properties of zinc oxide thin films as photoanode in DSSC." Journal of Achievements in Materials and Manufacturing Engineering 1, no. 86 (January 1, 2018): 33–40. http://dx.doi.org/10.5604/01.3001.0011.6016.

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Purpose: It has been recently observed, that zinc oxide thin films are gaining much popularity, particularly in applications such as toxic gas sensors, photocatalytic materials and photovoltaic cells. Due to much better physical properties of ZnO compared to the ones of titanium dioxide (TiO2), which is currently the most used material in dye sensitized solar cells, efforts are being made to fabricate DSSCs with thin films and/or nanostructures, including nanowires, nanofibres and nanoparticles of zinc oxide. Design/methodology/approach: In this paper, zinc oxide thin films were prepared using sol-gel and spin coating methods from Zn(COO)2 x 2H2O dissolved in ethanol and acetic acid with ZnO monocrystalline nanoparticles of 0 and 10% (wt.) relative to the final concentration of produced solutions. The effect of calcination process on ZnO thin films at 600°C were examined using atomic force microscope to investigate the morphology of semiconductor coatings, infrared spectroscopy to prove the chemical structure of material. Besides, optical properties were analysed on the basis of absorbance in the function of wavelength spectra and the values of energy band gaps were studied. Findings: The topography analysis of ZnO thin films showed an increase in roughness with the increase of zinc oxide nanoparticles in the thin films material. In addition, the analysis of the optical properties of ZnO thin films showed a decrease in absorption level in the range of near-ultraviolet wavelength for the obtained layers after annealing. Research limitations/implications: It was found that ZnO thin films produced by spin coating and calcination method are a proper material for photoanode in dye-sensitized solar cells, as zinc oxide layers provide better conductivity across the photovoltaic cell. Practical implications: The results provide the possibility of production DSSCs with zinc oxide thin films as photoanode. Originality/value: The dye-sensitized solar cells based on zinc oxide photoanodes could be alternative semiconductor material to titanium dioxide, which is used in nowadays solar cells. It was estimated that ZnO, especially zinc oxide nanostructures have much better physical properties, than TiO2 structures. What is more, zinc oxide thin layers are characterized by the lower energy losses resulting from the physical properties of such nanostructures, which results in more efficient solar energy into electricity conversion.
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13

Natsuhara, H., K. Matsumoto, N. Yoshida, T. Itoh, S. Nonomura, M. Fukawa, and K. Sato. "TiO2 thin films as protective material for transparent-conducting oxides used in Si thin film solar cells." Solar Energy Materials and Solar Cells 90, no. 17 (November 2006): 2867–80. http://dx.doi.org/10.1016/j.solmat.2006.05.001.

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14

Lee, Gye Cheol, Yu Sup Jung, and Kyung Hwan Kim. "Properties of Cu2O Thin Films for All-Oxide Solar Cells." Molecular Crystals and Liquid Crystals 598, no. 1 (July 24, 2014): 62–68. http://dx.doi.org/10.1080/15421406.2014.933299.

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15

Ahmad, Danial, M. Amer Khan, Arslan Mahmood, Amjad Sohail, and S. S. Ali Gillani. "Structural and optical properties of molybdenum oxide thin films prepared by the dip coating technique." European Physical Journal Applied Physics 93, no. 3 (March 2021): 30301. http://dx.doi.org/10.1051/epjap/2021200366.

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Due to their excellent structural and optical properties of molybdenum oxide thin films are used in various applications such as gas-sensing, solar cells, optoelectronic and medical physics. The present study is related to the synthesis of molybdenum oxide thin films prepared by dip coating technique and the films were characterized by using various techniques such as XRD, SEM and UV-visible spectroscopy. The monoclinic crystal structure and the crystallite size (29.16–52.77 nm) was investigated by X rays diffraction (XRD) analysis. SEM micrograph was used to identify the nano tubes in MoO3 thin film and UV-visible spectroscopy exhibits the maximum absorption in ultra-violet region and band gap decrease (3.17–2.71 eV) with increased the inner transition states in molybdenum thin film. Finally, the results show that the series of molybdenum oxides MoO1 (Sample 1), MoO2 (Sample 2) and MoO3 (sample 3) exhibited interesting structural and optical properties which make them good candidates for photo catalytic activity.
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16

An, Ha Rim, and Hyo Jin Ahn. "Characterization of Morphology Controlled Fluorine-Doped Tin Oxide Thin Films." Advanced Materials Research 922 (May 2014): 23–24. http://dx.doi.org/10.4028/www.scientific.net/amr.922.23.

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We controlled morphologies of F-doped SnO2(FTO) thin films via an electrochemical method. To obtain rough and porous surface of the FTO thin films, a potentiostat/galvanostat was used. Field-emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM) were employed to demonstrate the morphological changes of FTO surface. The electrical and optical properties of the FTO thin films were analyzed using Hall effect measurement system and UV-vis spectrophotometry. Also, morphology controlled the FTO thin films would be applied to dye-sensitized solar cells.
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17

Wang, Fang-Hsing, Shang-Chao Hung, Cheng-Fu Yang, and Yen-Hsien Lee. "Effects of Hydrogen Plasma on the Electrical Properties of F-Doped ZnO Thin Films and p-i-nα-Si:H Thin Film Solar Cells." International Journal of Photoenergy 2014 (2014): 1–7. http://dx.doi.org/10.1155/2014/425057.

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1.5 wt% zinc fluoride (ZnF2) was mixed with zinc oxide powder to form the F-doped ZnO (FZO) composition. At first, the FZO thin films were deposited at room temperature and5×10-3Torr in pure Ar under different deposition power. Hall measurements of the as-deposited FZO thin films were investigated, and then the electrical properties were used to find the deposition power causing the FZO thin films with minimum resistance. The FZO thin films with minimum resistance were further treated by H2plasma and then found their variations in the electrical properties by Hall measurements. Hydrochloric (HCl) acid solutions with different concentrations (0.1%, 0.2%, and 0.5%) were used to etch the surfaces of the FZO thin films. Finally, the as-deposited, HCl-etched as-deposited, and HCl-etched H2-plasma-treated FZO thin films were used as transparent electrodes to fabricate the p-i-nα-Si:H thin film solar cells and their characteristics were compared in this study. We would show that using H2-plasma-treated and HCl-etched FZO thin films as transparent electrodes would improve the efficiency of the fabricated thin film solar cells.
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18

Hussin, Rosniza, Xiang Hui Hou, and Kwang Leong Choy. "Growth of ZnO Thin Films on Silicon Substrates by Atomic Layer Deposition." Defect and Diffusion Forum 329 (July 2012): 159–64. http://dx.doi.org/10.4028/www.scientific.net/ddf.329.159.

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Atomic Layer Deposition (ALD) Offers the Key Benefits of Precise Deposition of Nanostructured Thin Films with Excellent Conformal Coverage. ALD Is Being Used in the Semiconductor Industry for Producing High-k (high Permittivity) Gate Oxides and High-K Memory Capacitor Dielectrics. Zno Has Attractive Properties for Various Applications such as Semiconductors, Gas Sensors and Solar Cells. in this Study, ZnO Thin Films Were Deposited via ALD Using Alternating Exposures of Diethyl Zinc (DEZ) and Deionized Water (H2O) on Silicon Wafer (100). the Thin Films Were Analyzed Using X-Ray Diffraction (XRD), Ellipsometer and Atomic Force Microscope (AFM). the XRD Analysis Shows the Presence of ZnO Thin Films with a Hexagonal Wurtzite Structure. the Thickness of ZnO Thin Films Was Correlated with the Substrate Temperatures and Deposition Cycles. the Coating Thickness Was Found to Increase with the Increase of the Deposition Cycles, but it Decreased with the Increase of Deposition Temperature. the Nucleation and Growth Mechanism of Zno Thin Film Has Been Established. it Can Be Concluded that, the Growth Mechanism of Zno Films Is Strongly Dependent on the ALD Processing Conditions.
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19

Hatem, Djedjiga, and Mohammed Said Belkaid. "SnO2 Thin Films Prepared by APCVD for Organic Solar Cells Application." Advanced Materials Research 685 (April 2013): 166–73. http://dx.doi.org/10.4028/www.scientific.net/amr.685.166.

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Abstract: The amelioration of the efficiency of photovoltaic conversion in organic solar cells can be obtained by minimizing losses in reflection and absorption in the transparent electrode/active layer interface involving increased absorption efficiency in the active layer which can be achieved by the use of TCOs with special optical and electrical properties. Tin oxide SnO2 thin films have been prepared by APCVD method using the SnCl2 as a starting material. The surface morphology of the films deposited on glass substrates were investigated by scanning electron microscopy (SEM).The ellipsometry was used to determinate the refractive index for the films deposited at 480°C and the -sheet resistance was measured using the Four-Point probe. Transmittance of SnO2 films deposited on ITO was measured by UV-visible spectroscopy. SnO2 films prepared during 11 minutes present a sheet resistance of 19.57 Ωcm-2, transmittance higher than 80% and refractive index of 1.75 can be used as interfacial layer in organic solar cells application to minimize the reflectivity. The total reflectivity of SnO2/P3HT: PCBM obtained by using these films is less than 3%. SnO2 films can also be used as interfacial layers in inverted solar cells application.
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20

Nordseth, Ørnulf, Raj Kumar, Kristin Bergum, Laurentiu Fara, Constantin Dumitru, Dan Craciunescu, Florin Dragan, et al. "Metal Oxide Thin-Film Heterojunctions for Photovoltaic Applications." Materials 11, no. 12 (December 19, 2018): 2593. http://dx.doi.org/10.3390/ma11122593.

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Silicon-based tandem solar cells incorporating low-cost, abundant, and non-toxic metal oxide materials can increase the conversion efficiency of silicon solar cells beyond their conventional limitations with obvious economic and environmental benefits. In this work, the electrical characteristics of a metal oxide thin-film heterojunction solar cell based on a cuprous oxide (Cu2O) absorber layer were investigated. Highly Al-doped n-type ZnO (AZO) and undoped p-type Cu2O thin films were prepared on quartz substrates by magnetron sputter deposition. The electrical and optical properties of these thin films were determined from Hall effect measurements and spectroscopic ellipsometry. After annealing the Cu2O film at 900 °C, the majority carrier (hole) mobility and the resistivity were measured at 50 cm2/V·s and 200 Ω·cm, respectively. Numerical modeling was carried out to investigate the effect of band alignment and interface defects on the electrical characteristics of the AZO/Cu2O heterojunction. The analysis suggests that the incorporation of a buffer layer can enhance the performance of the heterojunction solar cell as a result of reduced conduction band offset.
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21

Chuang, Chuan Lung, Ming Wei Chang, Nien Po Chen, Chung Chiang Pan, and Chung Ping Liu. "Improving Performance of CIGS Solar Cells by Annealing ITO Thin Films Electrodes." International Journal of Photoenergy 2015 (2015): 1–8. http://dx.doi.org/10.1155/2015/483147.

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Indium tin oxide (ITO) thin films were grown on glass substrates by direct current (DC) reactive magnetron sputtering at room temperature. Annealing at the optimal temperature can considerably improve the composition, structure, optical properties, and electrical properties of the ITO film. An ITO sample with a favorable crystalline structure was obtained by annealing in fixed oxygen/argon ratio of 0.03 at 400°C for 30 min. The carrier concentration, mobility, resistivity, band gap, transmission in the visible-light region, and transmission in the near-IR regions of the ITO sample were-1.6E+20 cm−3,2.7E+01 cm2/Vs,1.4E-03 Ohm-cm, 3.2 eV, 89.1%, and 94.7%, respectively. Thus, annealing improved the average transmissions (400–1200 nm) of the ITO film by 16.36%. Moreover, annealing a copper-indium-gallium-diselenide (CIGS) solar cell at 400°C for 30 min in air improved its efficiency by 18.75%. The characteristics of annealing ITO films importantly affect the structural, morphological, electrical, and optical properties of ITO films that are used in solar cells.
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Kim, Yujin, Sangmo Kim, Jeongsoo Hong, and Kyung Hwan Kim. "Characteristics of Aluminum-Doped Zinc Oxide Films Grown Using Facing Target Sputtering for Transparent Electrode of Heterojunction Solar Cells." Journal of Nanoscience and Nanotechnology 21, no. 3 (March 1, 2021): 1799–803. http://dx.doi.org/10.1166/jnn.2021.18928.

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In general sputtering, material characteristics can be degraded by high-energy particles located inside the plasma owing to the thin film surface. However, facing target sputtering (FTS) can be used to produce high-quality thin films through maximum control over substrate damage and the reduction of layer damage caused by high-energy particles impacting the substrate. Transparent conductive oxides (TCOs) are being applied to a variety of technologies, including displays and solar cells. The typical transparent electrode material is indium tin oxide (ITO), which contains rare and expensive raw materials. Aluminum-doped zinc oxide (AZO) has attracted increasing attention as a substitute to ITO because it is composed of abundantly available resources and is generally inexpensive. In this study, an AZO thin film was prepared using an FTS system for heterojunction solar cells. The effects of the deposition substrate temperature on the resulting electrical conductivity, structural properties, and optical properties of the AZO thin films were examined.
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23

Meng, Lijian, and Tao Yang. "Inclined Substrate Deposition of Nanostructured TiO2 Thin Films for DSSC Application." Molecules 26, no. 11 (May 24, 2021): 3122. http://dx.doi.org/10.3390/molecules26113122.

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Nanostructured TiO2 films were deposited onto Indium Tin Oxide (ITO) and glass substrates by dc reactive magnetron sputtering at different substrate inclination angles. The structural and optical properties of the deposited films were studied by X-ray diffraction, scanning electron microscopy and UV–Vis spectrophotometer, respectively. Dye-sensitized solar cells (DSSC) were assembled using these TiO2 films as photoelectrodes and the effect of the substrate inclination angle in the preparing process of TiO2 films on the DSSC conversion efficiency was studied.
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24

Bottiglieri, Lorenzo, Ali Nourdine, Joao Resende, Jean-Luc Deschanvres, and Carmen Jiménez. "Optimized Stoichiometry for CuCrO2 Thin Films as Hole Transparent Layer in PBDD4T-2F:PC70BM Organic Solar Cells." Nanomaterials 11, no. 8 (August 19, 2021): 2109. http://dx.doi.org/10.3390/nano11082109.

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The performance and stability in atmospheric conditions of organic photovoltaic devices can be improved by the integration of stable and efficient photoactive materials as substituent of the chemically unstable poly (3,4-ethylene dioxythiophene):polystyrene sulfonate (PEDOT:PSS), generally used as organic hole transport layer. Promising candidates are p-type transparent conductive oxides, which combine good optoelectronic and a higher mechanical and chemical stability than the organic counterpart. In this work, we synthesize Cu-rich CuCrO2 thin films by aerosol-assisted chemical vapour deposition as an efficient alternative to PEDOT:PSS. The effect of stoichiometry on the structural, electrical, and optical properties was analysed to find a good compromise between transparency, resistivity, and energy bands alignment, to maximize the photovoltaic performances., Average transmittance and bandgap are reduced when increasing the Cu content in these out of stoichiometry CuCrO2 films. The lowest electrical resistivity is found for samples synthesized from a solution composition in the 60–70% range. The optimal starting solution composition was found at 65% of Cu cationic ratio corresponding to a singular point in Hackee’s figure of merit of 1 × 10−7 Ω−1. PBDD4T-2F:PC70BM organic solar cells were fabricated by integrating CuCrO2 films grown from a solution composition ranging between 40% to 100% of Cu as hole transport layers. The solar cells integrating a film grown with a Cu solution composition of 65% achieved a power conversion efficiency as high as 3.1%, representing the best trade-off of the optoelectronic properties among the studied candidates. Additionally, despite the efficiencies achieved from CuCrO2-based organic solar cells are still inferior to the PEDOT:PSS counterpart, we demonstrated a significant enhancement of the lifetime in atmospheric conditions of optimal oxides-based organic photovoltaic devices.
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Futemvong, Surat, Atip Pengpad, Niyom Hongsith, Duangmanee Wongratanaphisan, Atcharawan Gardchareon, and Supab Choopun. "Effect of Nickel Oxide Thin Films on Photoconversion Efficiency in Zinc Oxide Dye-Sensitized Solar Cells." Materials Science Forum 695 (July 2011): 509–12. http://dx.doi.org/10.4028/www.scientific.net/msf.695.509.

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ZnO dye-sensitized solar cells (ZnO DSSCs) with different thickness of NiO thin films coated in photo-electrode and counter-electrode were investigated. NiO thin films were prepared by thermal evaporation of NiO onto FTO glass substrate. The films were characterized by FE-SEM. For the photo-electrode, NiO thin films were coated on ZnO with 0.2, 0.6, 1.1 and 2.2 mg to form a barrier layer. For the counter-electrode, NiO thin films were coated on FTO glass with 5.4, 10.8, 16.2 and 21.6 mg in order to increase a surface-to-volume ratio. The photoconversion efficiency of ZnO DSSCs was measured under illumination of stimulated sunlight obtained from solar simulator with the radiant power of 100 mW/cm2. It was found that ZnO DSSCs coated with 0.6 mg NiO in photo-electrode and 10.8 mg in counter-electrode exhibited the highest photoconversion efficiency of 1.00% and 0.92%, respectively. The enhancement of photoconversion efficiency with NiO coating maybe explained by decreasing of charge recombination in photo-electrode and increasing of active surface area in counter-electrode.
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Malik, Oleksandr, and F. J. de la Hidalga-W. "Spray Deposited Thin Films of Tin-Doped Indium Oxide for Optoelectronic Applications." Advanced Materials Research 677 (March 2013): 173–78. http://dx.doi.org/10.4028/www.scientific.net/amr.677.173.

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The structural, electrical, and optical properties of spray deposited tin-doped indium oxide (ITO) films are reported in this work. The films have excellent properties, as a transparent and conducting electrode, for applications in a wide range of areas of optoelectronics such as photodetection and photovoltaic. One example of the ITO thin films application in semiconductor-insulating-semiconductor (SIS) efficient solar cells and modules is shown.
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Socol, Marcela, and Nicoleta Preda. "Hybrid Nanocomposite Thin Films for Photovoltaic Applications: A Review." Nanomaterials 11, no. 5 (April 26, 2021): 1117. http://dx.doi.org/10.3390/nano11051117.

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Continuing growth in global energy consumption and the growing concerns regarding climate change and environmental pollution are the strongest drivers of renewable energy deployment. Solar energy is the most abundant and cleanest renewable energy source available. Nowadays, photovoltaic technologies can be regarded as viable pathways to provide sustainable energy generation, the achievement attained in designing nanomaterials with tunable properties and the progress made in the production processes having a major impact in their development. Solar cells involving hybrid nanocomposite layers have, lately, received extensive research attention due to the possibility to combine the advantages derived from the properties of both components: flexibility and processability from the organic part and stability and optoelectronics features from the inorganic part. Thus, this review provides a synopsis on hybrid solar cells developed in the last decade which involve composite layers deposited by spin-coating, the most used deposition method, and matrix-assisted pulsed laser evaporation, a relatively new deposition technique. The overview is focused on the hybrid nanocomposite films that can use conducting polymers and metal phthalocyanines as p-type materials, fullerene derivatives and non-fullerene compounds as n-type materials, and semiconductor nanostructures based on metal oxide, chalcogenides, and silicon. A survey regarding the influence of various factors on the hybrid solar cell efficiency is given in order to identify new strategies for enhancing the device performance in the upcoming years.
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Ukoba, Kingsley, Freddie Inambao, and Andrew Eloka-Eboka. "Optimising Aged Nanostructured Nickel Oxide Thin Films for Solar Cells Fabrication." Journal of Physical Science 30, no. 1 (April 25, 2019): 1–15. http://dx.doi.org/10.21315/jps2019.30.1.1.

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Negami, Takayuki, Yasuhiro Hashimoto, Mikihiko Nishitani, and Takahiro Wada. "CuInS2 thin-films solar cells fabricated by sulfurization of oxide precursors." Solar Energy Materials and Solar Cells 49, no. 1-4 (December 1997): 343–48. http://dx.doi.org/10.1016/s0927-0248(97)00076-7.

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Kafle, Bhim P., Babu R. Pokhrel, Rajendra Gyawali, Prakash Lamichhane, and Ravi M. Adhikari. "Fabrication of dye-sensitized solar cells from thin films of zinc oxide nanocrystalline particles and organic dye." BIBECHANA 11 (May 8, 2014): 53–59. http://dx.doi.org/10.3126/bibechana.v11i0.10380.

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Photovoltaic solar modules, which are mostly made of silicon based solar cells, are still expensive to the common people of Nepal. The high cost is, mainly, due to the processing difficulties to get pure crystalline silicon. Here, we present results on devising efficient and low-cost dye sensitized solar cells (DSSCs). The solar cells were fabricated from transparent thin film of zinc oxide (ZnO), as a semiconductor, on top of which a thin layer of synthetic organic dye was deposited for efficient light harvesting. In order to achieve the films with optimum conditions for solar cell fabrication, we prepared transparent thin films of ZnO of various thicknesses and characterized by measuring their light transmittance by UV-Visible spectrophotometry. The results clearly show variation in transmittance curves with variation in film’s thickness. Also for finding appropriate sensitizer for ZnO nanoparticles, we extensively investigated the light absorbance of synthetic organic dyes. Among the dye species investigated, Green-VS, Patent-Blue, and Black-ADLI show strong absorbance over the wide range in the visible spectrum, demonstrating prospect of utilizing for DSSCs. Then prototype solar cells from ZnO film with various thicknesses were constructed and were sensitized with the mixture of Green-VS and Black-ADLI dyes (with 1:1 ratio). The measured photo-voltage and photo-current from solar cell, from our modest ZnO film, after irradiation with 200 W commercial bulb (calibrated with Pyranometer) as a light source, were about 20 mV and 1 μA, respectively. Also, with increment of the power of radiation both the measured photo-current and photo-voltage increase. Performance of the cell in real sun condition has also been made. With the solar radiation power of 930 W, the observed photo-voltage and photo-current were ca. 230 mV and 50 μA, respectively. DOI: http://dx.doi.org/10.3126/bibechana.v11i0.10380 BIBECHANA 11(1) (2014) 53-59
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Zeng, Guanggen, Xia Hao, Shengqiang Ren, Lianghuan Feng, and Qionghua Wang. "Application of ALD-Al2O3 in CdS/CdTe Thin-Film Solar Cells." Energies 12, no. 6 (March 22, 2019): 1123. http://dx.doi.org/10.3390/en12061123.

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The application of thinner cadmium sulfide (CdS) window layer is a feasible approach to improve the performance of cadmium telluride (CdTe) thin film solar cells. However, the reduction of compactness and continuity of thinner CdS always deteriorates the device performance. In this work, transparent Al2O3 films with different thicknesses, deposited by using atomic layer deposition (ALD), were utilized as buffer layers between the front electrode transparent conductive oxide (TCO) and CdS layers to solve this problem, and then, thin-film solar cells with a structure of TCO/Al2O3/CdS/CdTe/BC/Ni were fabricated. The characteristics of the ALD-Al2O3 films were studied by UV–visible transmittance spectrum, Raman spectroscopy, and atomic force microscopy (AFM). The light and dark J–V performances of solar cells were also measured by specific instrumentations. The transmittance measurement conducted on the TCO/Al2O3 films verified that the transmittance of TCO/Al2O3 were comparable to that of single TCO layer, meaning that no extra absorption loss occurred when Al2O3 buffer layers were introduced into cells. Furthermore, due to the advantages of the ALD method, the ALD-Al2O3 buffer layers formed an extremely continuous and uniform coverage on the substrates to effectively fill and block the tiny leakage channels in CdS/CdTe polycrystalline films and improve the characteristics of the interface between TCO and CdS. However, as the thickness of alumina increased, the negative effects of cells were gradually exposed, especially the increase of the series resistance (Rs) and the more serious “roll-over” phenomenon. Finally, the cell conversion efficiency (η) of more than 13.0% accompanied by optimized uniformity performances was successfully achieved corresponding to the 10 nm thick ALD-Al2O3 thin film.
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Moon, Taeho, Jin Hyung Jun, Hyun Lee, Wonki Yoon, Soohyun Kim, Byung-Kee Lee, Hong-Cheol Lee, et al. "Additional coating effects on textured ZnO : Al thin films as transparent conducting oxides for thin-film Si solar cells." Progress in Photovoltaics: Research and Applications 20, no. 3 (July 21, 2011): 294–97. http://dx.doi.org/10.1002/pip.1137.

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Salam, Shahzad, Mohammad Islam, and Aftab Akram. "Sol–gel synthesis of intrinsic and aluminum-doped zinc oxide thin films as transparent conducting oxides for thin film solar cells." Thin Solid Films 529 (February 2013): 242–47. http://dx.doi.org/10.1016/j.tsf.2012.10.079.

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Boryło, Paulina, Marek Szindler, and Krzysztof Lukaszkowicz. "Various Applications of Multifunctional Thin Films with Specific Properties Deposited by the ALD Method." Solid State Phenomena 293 (July 2019): 111–23. http://dx.doi.org/10.4028/www.scientific.net/ssp.293.111.

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This paper presents application examples of atomic layer deposition method (ALD) adopted for production of multifunctional thin films for various usage such as passive, antireflection and transparent conductive films. First part of this paper introduces the mechanism of ALD process, in the rest of it, aluminum oxide (as passive and antireflection) and zinc oxide (as antireflection and transparent conductive) ALD thin films are presented. In the literature one can find reports on the use of the Al2O3 layer as passivating and ZnO layers as a transparent conductive oxide in diodes, polymeric and dye sensitized solar cells. In this article, the ALD layers were tested for their use in silicon solar cells, using their good electrical and optical properties. For examination of prepared thin films characteristics, following research methods were used: scanning electron microscope, atomic force microscope, X-ray diffractometer, ellipsometer, UV/VIS spectrometer and resistance measurements. By depositing a layer thickness of about 80 nm, the short-circuit current on the surface of the solar cell was increased three times while reducing the reflection of light. In turn, by changing the deposition temperature of the ZnO thin film, you can control its electrical properties while maintaining high transparency. The obtained results showed that the ALD method provide the ability to produce a high quality multifunctional thin films with the required properties.
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Truong, Nguyen Huu, Tinh Van Nguyen, Tuan Anh Thanh Pham, Dung Van Hoang, Hung Minh Vu, Hoi Cong Nguyen, Thang Bach Phan, and Vinh Cao Tran. "Influence of indium and hydrogen co-doping on optical and electrical properties of zinc oxide thin films deposited by DC magnetron sputtering." Science and Technology Development Journal 22, no. 2 (July 7, 2019): 253–57. http://dx.doi.org/10.32508/stdj.v22i2.1657.

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Introduction: ZnO-based thin films, known as potential transparent-conducting oxides (TCO), have still attracted much attention in applications for good-performance electrodes and inner layers in solar cells. Recently, the research tendency has focused on improving carrier mobility rather than carrier concentration to enhance performance and response speed of TCO thin films. In this work, Indium, and Hydrogen co-doped ZnO (HIZO) thin films were deposited by using DC magnetron sputtering technique in hydrogen-plasma atmosphere. Methods: Indium-doped ZnO ceramics were used as sputtering targets, in which, Indium content varied from 0.07 to 1.0 at.%. The electrical, optical, structural and surface morphological properties of the as-deposited films were investigated by using Hall effect-based measurement, UV-Vis spectra, X-ray diffraction (XRD) and fieldemission scanning electron microscopy (FE-SEM), respectively. Results: As a result, the HIZO films sputtered from the 0.1 at.% In-doped ZnO target and at H2/(H2+Ar) ratio of 3.5% exhibit high electron mobility (47 cm2/Vs), the lowest resistivity (4.9x10-4 Ω.cm) and sheet resistance (4.7 Ω/sq.), simultaneously, high average transmittance (>80%) in the visible – near IR spectrum regions. Conclusion: Based on these results, the HIZO films are considered as potential TCO thin films that can be well-used as transparent electrodes in solar cells.
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Verma, Anil Kumar, Swati Sahu, Mohan Patel, and Sanjay Tiwari. "Preparation, Fabrication and Characterization of Sol-Gel ZnO Thin Films for Organic Solar Cells." Journal of Ravishankar University (PART-B) 33, no. 1 (July 4, 2020): 24–30. http://dx.doi.org/10.52228/jrub.2020-33-1-5.

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In this work, ZnO has been prepared by the sol-gel method and thin films have been deposited onto the ITO (Indium-Tin-Oxide) coated glass substrates by spin coating method at different ZnO concentration and spin parameters. For this, Sol-gel ZnO was synthesized by Zinc acetate dehydrate, 2-methoxethanol and ethanolamine as a starting material, solvent and stabilizer respectively. The study of deposition parameters on the structural, optical and electrical properties of the ZnO thin films was carried out. The Roughness and thickness were calculated by Profilometer. X-ray diffraction (XRD) analysis of the films showed the polycrystalline nature of the prepared films. Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM) was used to describe the surface morphology and optical properties were studied using UV-VIS-IR Spectroscopy. The fabricated results showed that ZnO thin films is crystalline and low-cost techniques with good features that will be useful for Organic Solar Cells (OSCs) device as an electron transport layer.
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Ollotu, Emmanuel R., Nuru R. Mlyuka, and Margaret E. Samiji. "Effects of rapid thermal annealing on the properties of room-temperature oxygenated DC sputtered zinc thin films for CZTS solar cells application." Tanzania Journal of Science 47, no. 2 (May 19, 2021): 637–47. http://dx.doi.org/10.4314/tjs.v47i2.19.

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This work investigated the potential to achieve zinc oxide (ZnO) films for Cu2ZnSnS4 (CZTS) solar cells window layer at controlled annealing conditions as a potential approach to address elemental inter-diffusion in CZTS solar cells. This involved rapid thermal annealing (RTA) of room-temperature oxygenated DC sputtered zinc thin films in an ambient of nitrogen gas at different temperatures. Structural, morphological, optical, and electrical properties of these films were determined by X-ray diffractometer, Scanning Electron Microscopy, Ultraviolet-visible-near infrared spectrophotometer, and Hall Effect measurement, respectively. ZnO phases were observed after annealing the films over 150 °C. The films’ grains sizes improved with increasing RTA temperature. An exponential decrease in these films’ resistivity was observed with increasing RTA temperature attaining the lowest value at 300 °C. The bandgap and average solar transmittance of the films increased with increasing RTA temperature achieving values that are potential for applications in CZTS solar cells window layer at RTA temperatures beyond 200 °C. Keywords: Sputtering; Rapid thermal annealing; Zinc oxide; Structural; Opt-electrical
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38

Gupta, Vinod Kumar, S. B. Shrivastava, and Geeta Bhatia. "THIN FILM TECHNOLOGY IN THE FIELD OF ENVIRONMENT." International Journal of Research -GRANTHAALAYAH 3, no. 9SE (September 30, 2015): 1–3. http://dx.doi.org/10.29121/granthaalayah.v3.i9se.2015.3287.

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Environmental conservation is a challenge to the mankind. The measures to check it must be easy to use, cheap and eco friendly. Thin film technology is providing answers to some of these problems. Nanostructured thin films of metal oxide are used in solar cells, semi permeable membrane, protective coatings, electronic devices, optoelectronics etc. Recently thin films have been developed to be used in different fields of environment. These include gas sensors, nanofilters etc. A brief review of the work done in this field is given in this paper.
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Demircioglu, Zeynep, Hisham Nasser, Robert S. Balog, and Rasit Turan. "Effect of Laser Wavelength on AZO Surface Texturing by Direct Laser Processing / Patterning for Thin-Film Silicon Solar Cells Applications." MRS Advances 3, no. 25 (2018): 1411–18. http://dx.doi.org/10.1557/adv.2018.23.

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ABSTRACTSurface texturing of transparent conductive oxides is crucial to improve the fraction of incident light trapped in the absorber layer of thin film silicon based solar cells to improve the device performance. In this work, we fabricate and compare periodic, overlapping, and random surface textures and patterns on aluminium doped zinc oxide (AZO) using direct laser processing. The effects of the used laser wavelength, laser operating frequency, and pulse periodicity on the structural, morphological, and optical response of the AZO films were investigated. By optimizing the laser parameters and the associated process conditions, a drastic increase up to 60% in the transmittance haze over the entire solar was achieved.
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Hossain, Mohammad I., Adnan Mohammad, Wayesh Qarony, Saidjafarzoda Ilhom, Deepa R. Shukla, Dietmar Knipp, Necmi Biyikli, and Yuen Hong Tsang. "Atomic layer deposition of metal oxides for efficient perovskite single-junction and perovskite/silicon tandem solar cells." RSC Advances 10, no. 25 (2020): 14856–66. http://dx.doi.org/10.1039/d0ra00939c.

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Flickyngerová, Soňa, Vladimír Tvarožek, and Pavol Gašpierik. "Zinc Oxide — A Unique Material for Advanced Photovoltaic Solar Cells." Journal of Electrical Engineering 61, no. 5 (September 1, 2010): 291–95. http://dx.doi.org/10.2478/v10187-010-0043-2.

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Zinc Oxide — A Unique Material for Advanced Photovoltaic Solar CellsA novel approach to the preparation of thin films by using RF diode sputtering was developed. In one deposition run, thin films of doped ZnO:(Al, Ga) were obtained with different structural, optical and electrical properties. ZnO: Al films of low resistivities in order of 10-3Ωcm and high optical transmittances about 93% have appeared the most suitable for photovoltaic applications.
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Kayani, Zohra Nazir, Atiqa Aslam, Rabia Ishaque, Syeda Nosheen Zahra, Hifza Hanif, Noor-Ul-Ain Maken, and Hajra Khan. "The effect of the withdrawal speed on properties of nickel oxide thin films." Zeitschrift für Kristallographie - Crystalline Materials 234, no. 10 (October 25, 2019): 647–55. http://dx.doi.org/10.1515/zkri-2019-0028.

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Abstract Nickel oxide thin films have been prepared by sol-gel dip-coating technique on glass substrate. It is shown that nickel oxide thin films have poly crystalline nature. Nickel oxide thin films exhibit high transmission (39–85%) in the wavelength range of 400–900 nm, strong absorption between 300 and 400 nm wavelengths and decrease of band gap values are in the range 3.69–3.27 eV with increase of withdrawal speed. High band gap at low withdrawal speed is because of the small average crystallite size, which decreases with increase in withdrawal speed. The SEM micrograph shows cubic crystallites and surface of thin films become dense, smooth and homogeneous with an increase in withdrawal speed. Assessment of nickel oxide deposition conditions provides gateway for effective and cheap solar cells.
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Gessert, T. A., J. Burst, X. Li, M. Scott, and T. J. Coutts. "Advantages of transparent conducting oxide thin films with controlled permittivity for thin film photovoltaic solar cells." Thin Solid Films 519, no. 21 (August 2011): 7146–48. http://dx.doi.org/10.1016/j.tsf.2011.01.143.

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Ji, Xiaoxu, Wumei Liu, Yumin Leng, and Aihua Wang. "Facile Synthesis of ZnO@TiO2Core-Shell Nanorod Thin Films for Dye-Sensitized Solar Cells." Journal of Nanomaterials 2015 (2015): 1–5. http://dx.doi.org/10.1155/2015/647089.

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ZnO nanorod thin films grown on fluorine-doped tin oxide (FTO) glasses have been synthesized via facile thermal evaporation. To optimize the performance of dye-sensitized solar cells (DSSCs), we fabricated ZnO@TiO2core-shell composite by a simple dip-coating method immersed in the mixed solution of Ti(OC4H9) and ethanol. Results of solar cell testing showed that ZnO@TiO2core-shell nanorod thin films on FTO significantly increased open circuit voltage (from 0.47 V to 0.53 V), short circuit current (from 10.78 mA/cm2to 13.98 mA/cm2), and fill factor (from 51% to 55%). The photoelectric conversion efficiency (PEC) increased from 3.3% for bare ZnO DSSCs to 4.85% for ZnO@TiO2core-shell structured DSSCs. This is mainly ascribed to the improvement in light harvesting efficiency, electron transfer, and the effective suppression of charge recombination.
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ZHOU, J. C., L. LI, L. Y. RONG, B. X. ZHAO, Y. M. CHEN, and F. LI. "ELECTRICAL AND OPTICAL PROPERTIES OF ZnO THIN FILMS PREPARED BY R.F. MAGNETRON SPUTTERING." International Journal of Modern Physics B 25, no. 20 (August 10, 2011): 2741–49. http://dx.doi.org/10.1142/s0217979211100357.

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High transparency and conductivity of transparent conducting oxide thin film are very important for improving the efficiency of solar cells. ZnO thin film is a better candidate for transparent conductive layer of solar cell. N-type ZnO thin films were prepared by radio-frequency magnetron sputtering on glass substrates. ZnO thin films underwent annealing treatment after deposition. The influence of the sputtering power on the surface morphology, the electrical and optical properties were studied by AFM, XRD, UV2450 and HMS-3000. The experimental results indicate that the crystal quality of ZnO thin film is improved and all films show higher c-axis orientation with increasing sputtering power from 50 to 125 W. The average transparency of ZnO thin films is higher than 90% in the range of 400–900 nm between the sputtering power of 50–100 W. After the rapid thermal annealing at 550°C for 300 s under N2 ambient, the minimum resistivity reach to 10-2Ω⋅ cm .
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46

Du, Xiao, Yan Wang, Zhong Gao Xia, and Hang Zhou. "Perovskite CH3NH3PbI3 Heterojunction Solar Cells via Ultrasonic Spray Deposition." Applied Mechanics and Materials 748 (April 2015): 39–43. http://dx.doi.org/10.4028/www.scientific.net/amm.748.39.

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We fabricated the copper oxide (Cu2O or Cu3O4)/perovskite CH3NH3PbI3 heterojunction solar cells via ultrasonic spray deposition technique. Perovskite CH3NH3PbI3 thin films were sprayed directly from precusor solution onto a copper oxide pre-coated ITO substrate. We analyzed the properties of the as-deposited perovskite thin films. The surface morphologies of Perovskite CH3NH3PbI3 thin films were examined by optical microscope, and their crystallinities were confirmed by X-ray diffraction measurements. Large CH3NH3PbI3 crystal with grain size of ~20μm was observed. The solar cells device achieved a conversion efficiency of 4.13%.
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Islam, Mohammad Aminul, Yasmin Abdu Wahab, Mayeen Uddin Khandaker, Abdullah Alsubaie, Abdulraheem S. A. Almalki, David A. Bradley, and Nowshad Amin. "High Mobility Reactive Sputtered CuxO Thin Film for Highly Efficient and Stable Perovskite Solar Cells." Crystals 11, no. 4 (April 7, 2021): 389. http://dx.doi.org/10.3390/cryst11040389.

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Copper oxide (CuxO) films are considered to be an attractive hole-transporting material (HTM) in the inverted planar heterojunction perovskite solar cells due to their unique optoelectronic properties, including intrinsic p-type conductivity, high mobility, low-thermal emittance, and energy band level matching with the perovskite (PS) material. In this study, the potential of reactive sputtered CuxO thin films with a thickness of around 100 nm has been extensively investigated as a promising HTM for effective and stable perovskite solar cells. The as-deposited and annealed films have been characterized by using X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM), Photoluminescence (PL), UV-Vis spectroscopy, and Hall-effect measurement techniques. The significant change in structural and optoelectronic properties has been observed as an impact of the thermal annealing process. The phase conversion from Cu2O to CuO, including grain size increment, was observed upon thermal annealing. The transmittance and optical bandgap were found to vary with the films’ crystallographic transformation. The predominant p-type conductivity and optimum annealing time for higher mobility have been confirmed from the Hall measurement. Films’ optoelectrical properties were implemented in the complete perovskite solar cell for numerical analysis. The simulation results show that a 40 min annealed CuxO film yields the highest efficiency of 22.56% with a maximum open-circuit voltage of 1.06 V.
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Kurokawa, Yasuyoshi, Ryota Nezasa, Shinya Kato, Hisashi Miyazaki, Isao Takahashi, and Noritaka Usami. "Fabrication of silicon nanowire based solar cells using TiO2/Al2O3 stack thin films." MRS Advances 3, no. 25 (2018): 1419–26. http://dx.doi.org/10.1557/adv.2018.40.

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ABSTRACTTo improve conversion efficiency of silicon nanowire (SiNW) solar cells, it is very important to reduce the surface recombination rate on the surface of SiNWs, since SiNWs have a large surface area. We tried to cover SiNWs with aluminum oxide (Al2O3) and titanium oxide (TiO2) by atomic layer deposition (ALD), since Al2O3 grown by ALD provides an excellent level of surface passivation on silicon wafers and TiO2 has a higher refractive index than Al2O3, leading to the reduction of surface reflectance. The effective minority carrier lifetime in SiNW arrays embedded in a TiO2/Al2O3 stack layer of 94 μsec was obtained, which was comparable to an Al2O3 single layer. The surface reflectance of SiNW solar cells was drastically decreased below around 5% in all of the wavelength range using the Al2O3/TiO2/Al2O3 stack layer. Heterojunction SiNW solar cells with the structure of ITO/p-type hydrogenated amorphous silicon (a-Si:H)/n-type SiNWs embedded in Al2O3 and TiO2 stack layer for passivation/n-type a-Si:H/back electrode was fabricated, and a typical rectifying property and open-circuit voltage of 356 mV were successfully obtained.
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Liu, Gui Shan, Ming Jun Wang, Zhi Qiang Hu, Yan Yan Jiang, and Xiao Yue Shen. "Preparation and Properties of ZnO/ZAO Double-Layers Thin Films on the Substrate of Glass." Key Engineering Materials 537 (January 2013): 150–54. http://dx.doi.org/10.4028/www.scientific.net/kem.537.150.

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Aluminium zinc oxide(ZAO) thin films were deposited on soda-Lime-Silica glass substrate by middle frequency power magnetron sputtering. Then zinc oxide(ZnO) thin films were deposited above ZAO thin films by electrochemical deposition method at different time. ZAO thin films and ZnO/ZAO double-Layers thin films were characterized by X-Ray diffraction(XRD) and scanning electron microscope(SEM). A four-Point probe was used to determine the resistivity of the films. The optical transmittance of ZAO films and ZnO/ZAO films was measured by UV-Visible spectrum. The results represent that the transmittance of ZAO/ZnO thin films decreases gradually with deposition time increasing. When the deposition time is 5 minutes, the maximum transmittance of ZnO/ZAO films reaches to 85% at wave length from 400nm to 600nm, and the thickness and resistivity of thin film are 610nm and 2.04×10-3Ω•cm, respectively. However, the thickness and resistivity are highest when the deposition time is 20 minutes, which reaches to 808nm and 1.2×10-2Ω•cm. Meanwhile, the lattice constants a and c of ZAO/ZnO thin films demonstrate an expansion with deposition time increasing. In essence, good-Quality double-Layers thin films of ZnO/ZAO play an important role in CIGS solar cells.
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Gruenbaum, P. E., J. Y. Gan, and R. M. Swanson. "Use of ultrathin oxides and thin polycrystalline silicon films for stable high‐efficiency silicon solar cells." Applied Physics Letters 58, no. 9 (March 4, 1991): 945–47. http://dx.doi.org/10.1063/1.104486.

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