To see the other types of publications on this topic, follow the link: OxRAM - oxide-Based resistive memory.
Dissertations / Theses on the topic 'OxRAM - oxide-Based resistive memory'
Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles
Consult the top 36 dissertations / theses for your research on the topic 'OxRAM - oxide-Based resistive memory.'
Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.
You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.
Browse dissertations / theses on a wide variety of disciplines and organise your bibliography correctly.
1
Benoist, Antoine. "Pre and post breakdwon modeling of high-k dielectrics regarding antifuse and OxRAM non-volatile memories." Thesis, Lyon, 2017. http://www.theses.fr/2017LYSEI007.
Full textAbstract:
Les mémoires non volatiles intégrées représentent une part importante du marché des semi-conducteurs. Bien qu'il s'adresse à de nombreuses applications différentes, ce type de mémoire fait face à des problèmes pour poursuivre la réduction continue de la résolution des technologies CMOS. En effet, l'introduction récente de high-k et de métal pour la grille des transistors menace la compétitivité de la solution Flash. En conséquence, de nombreuses solutions émergentes sont étudiées. L'Antifuse dans le cadre des mémoires OTP est utilisée pour l'identification de puces, la configuration de circuits, la réparation de système ou le stockage de données sécurisées. La programmation Antifuse repose sur la dégradation de l'oxyde de grille de son condensateur sous haute tension. Des travaux antérieurs ont déjà apporté quelques connaissances sur les mécanismes physiques impliqués sur des technologies à oxyde de grille SiO2. De nouveaux défis découlent de l'introduction des nouveaux matériaux de grille. Un examen complet est nécessaire sur les mécanismes de dégradation des oxydes impliqués dans la programmation Antifuse. L'utilisation intensive de la haute tension suggère également d'étendre notre connaissance sur la fiabilité dans cette gamme de tension. Les états pré et post-claquage de l'oxyde de grille sous des mécanismes à haute tension sont donc étudiés dans ce manuscrit se concentrant sur les technologies CMOS les plus avancées. Une loi en puissance type TDDB a été étendue vers les hautes tensions pour être utilisée comme un modèle de temps de programmation Antifuse. L'extension de la fiabilité TDDB nous donne également un élément clé pour modéliser la durée de vie du transistor de sélection. Des paramètres de programmation tels que l'amplitude de la tension, la compliance du courant ou la température sont également étudiés et leur impact sur le rendement en courant de lecture est abordé. Cette étude nous permet de rétrécir agressivement la surface globale de la cellule sans perte de performance ni de dégradation de la fiabilité. Un processus de caractérisation Antifuse est proposé pour être retravaillé et un modèle de programmation de tension-température-dépendante est inventé. Ce manuscrit a également mis l'accent sur la modélisation de courant de cellule programmée comme la fuite d’un oxyde de grille post-claquage. Un modèle compact MOSFET dégradé est proposé et comparé à l'état de l’art. Un bon accord est trouvé pour s'adapter à la large gamme de caractérisations I (V) de la cellule programmée. L'activation de ce modèle dans un environnement de design nous a permis de simuler la dispersion des distributions de courants de cellules programmées au niveau de la taille du produit à l'aide de runs Monte-Carlo. Enfin, cette thèse s'achève autour d'une étude d'investigation OxRAM comme une solution émergente. En combinant le dispositif Antifuse avec le mécanisme de commutation résistif de l'OxRAM, une solution hybride est proposée en perspectiveEmbedded Non Volatile Memories represent a significant part of the semiconductor market. While it addresses many different applications, this type of memory faces issues to keep the CMOS scaling down roadmap. Indeed, the recent introduction of high-k and metal for the CMOS gate is threatening the Flash’s competitiveness. As a consequence many emerging solutions are being. The Antifuse as part of the OTP memories is fully CMOS compliant, Antifuse memories are used for Chip ID, chip configuration, system repairing or secured data storage to say the least. The Antifuse programming relies on the gate oxide breakdown of its capacitor under high voltage. Previous work already brought some knowledge about the physical mechanisms involved but mainly on SiO2 gate oxide technologies. New challenges arise from the introduction of the new gate materials. A full review is needed about the oxide breakdown mechanisms involved in the Antifuse programming. The extensive use of high voltage also suggests to extend our knowledge about reliability within this voltage range. Pre and post gate oxide breakdown under high voltage mechanisms are then deeply investigated in this manuscript focusing on the most advanced CMOS technologies. Fowler Nordheim Tunneling has been confirmed as the main mechanism responsible for the gate oxide leakage conduction under high voltage during the wearout phase even-though defect contribution has been evidenced to mainly contribute under low voltage , e.g. the virgin Antifuse leakage current. A TDDB based power law has been extended toward high voltage to be used as a robust Antifuse programming time model. Extending the TDDB reliability under high electric field also gives us key element to model the selection MOSFET time to failure. Programming parameters such as voltage amplitude, current compliance or temperature are also investigated and their impact on the Read Current Yield are tackled. This study allows us to aggressively shrink the bitcell overall area without losing performance nor degrading the reliability. This study also reveals a worst case scenario for the programming parameters when temperature is very low. As a consequence, the early Antifuse characterization process is proposed to be rework and a programming voltage-temperature-dependent solution is invented. This manuscript also focused on the Antifuse programmed cell current modeling as gate oxide post-breakdown conduction. A remaining MOSFET compact model is proposed and compared to the state of the art. Good agreement is found to fit the wide range of read current. Enabling this model within a CAD environment has allowed us to simulate the Read Current Yield dispersion at product size level using Monte-Carlo runs. Finally, this thesis wraps up around an OxRAM investigation study as a serious emerging eNVM solution. Combining the Antifuse device with the resistive switching mechanism of the OxRAM, a hybrid solution is proposed as a perspective
2
Chowdhury, Madhumita. "NiOx Based Resistive Random Access Memories." University of Toledo / OhioLINK, 2012. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1325535812.
Full text
3
Labalette, Marina. "Intégration 3D de dispositifs mémoires résistives complémentaires dans le back end of line du CMOS." Thesis, Lyon, 2018. http://www.theses.fr/2018LYSEI037/document.
Full textAbstract:
La gestion, la manipulation et le stockage de données sont aujourd’hui de réels challenges. Pour supporter cette réalité, le besoin de technologies mémoires plus efficaces, moins énergivores, moins coûteuses à fabriquer et plus denses que les technologies actuelles s’intensifie. Parmi les technologies mémoires émergentes se trouve la technologie mémoire résistive, dans laquelle l’information est stockée sous forme de résistance électrique au sein d’une couche d’oxyde entre deux électrodes conductrices. Le plus gros frein à l’émergence de tels dispositifs mémoires résistives en matrices passives à deux terminaux est l’existence d’importants courants de fuites (ou sneak paths) venant perturber l’adressage individuel de chaque point de la matrice. Les dispositifs complementary resistive switching (CRS), consistant en deux dispositifs OxRRAM agencés dos à dos, constituent une solution performante à ces courants de fuites et sont facilement intégrables dans le back-end-of-line (BEOL) de la technologie CMOS. Cette thèse a permis d’apporter la preuve de concept de la fabrication et de l’intégration de dispositifs CRS de façon 3D monolithique dans le BEOL du CMOSIn our digital era, management, manipulation and data storage are real challenges. To support this reality the need for more efficient, less energy and money consuming memory technologies is drastically increasing. Among those emerging memory technologies we find the oxide resistive memory technology (OxRRAM), where the information is stored as the electrical resistance of a switching oxide in sandwich between two metallic electrodes. Resistive memories are really interested if used inside passive memory matrix. However the main drawback of this architecture remains related to sneak path currents occurring when addressing any point in the passive matrix. To face this problem complementary resistive switching devices (CRS), consisting in two OxRRAM back to back, have been proposed as efficient and costless BEOL CMOS compatible solution. This thesis brought the proof of concept of fabrication and 3D monolithic integration of CRS devices in CMOS BEOL
4
Chen, Wenbo. "Understanding of Oxide Based Resistive Random Access Memory Devices with Multi-level Resistance States and Application." University of Toledo / OhioLINK, 2017. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1466719077.
Full text
5
Ellis, Noah. "Design, fabrication, and characterization of nano-scale cross-point hafnium oxide-based resistive random access memory." Thesis, Georgia Institute of Technology, 2016. http://hdl.handle.net/1853/55038.
Full textAbstract:
Non-volatile memory (NVM) is a form of computer memory in which the logical value (1 or 0) of a bit is retained when the computer is in its’ powered off state. Flash memory is a major form of NVM found in many computer-based technologies today, from portable solid state drives to numerous types of electronic devices. The popularity of flash memory is due in part to the successful development and commercialization of the floating gate transistor. However, as the floating gate transistor reaches its’ limits of performance and scalability, viable alternatives are being aggressively researched and developed. One such alternative is a memristor-based memory application often referred to as ReRAM or RRAM (Resistive Random Access Memory). A memristor (memory resistor) is a passive circuit element that exhibits programmable resistance when subjected to appropriate current levels. A high resistance state in the memristor corresponds to a logical ‘0’, while the low resistance state corresponds to a logical ‘1’. One memristive system currently being actively investigated is the metal/metal oxide/metal material stack in which the metal layers serve as contact electrodes for the memristor with the metal oxide providing the variable resistance functionality. Application of an appropriate potential difference across the electrodes creates oxygen vacancies throughout the thickness of the metal oxide layer, resulting in the formation of filaments of metal ions which span the metal oxide, allowing for electronic conduction through the stack. Creation and disruption of the filaments correspond to low and high resistance states in the memristor, respectively. For some time now, HfO2 has been researched and developed to serve as a high-k material for use in high performance CMOS MOSFETs. As it happens, HfO2-based RRAM devices have proven themselves as viable candidates for NVM as well, demonstrating high switching speed (< 10 ns), large OFF/ON ratio (> 100), good endurance (> 106 cycles), long lifetime, and multi-bit storage capabilities. HfO2-based RRAM is also highly scalable, having been fabricated in cells as small as 10 x 10 nm2 while still maintaining good performance. Previous work examining switching properties of micron scale HfO2-based RRAM has been performed by the Vogel group. However, a viable process for fabrication of nano-scale RRAM is required in order to continue these studies. In this work, a fabrication process for nano-scale cross-point TiN/ HfO2/TiN RRAM devices will be developed and described. Materials processing challenges will be addressed. The switching performance of devices fabricated by this process will be compared to the performance of similar devices from the literature in order to confirm process viability.
6
Manjunath, Vishal Jain. "Effect Of Interfacial Top Electrode Layer On The Performance Of Niobium Oxide Based Resistive Random Access Memory." University of Cincinnati / OhioLINK, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1552657250617694.
Full text
7
Petzold, Stefan [Verfasser], Lambert [Akademischer Betreuer] Alff, and Leopoldo [Akademischer Betreuer] Molina-Luna. "Defect Engineering in Transition Metal Oxide-based Resistive Random Access Memory / Stefan Petzold ; Lambert Alff, Leopoldo Molina-Luna." Darmstadt : Universitäts- und Landesbibliothek Darmstadt, 2020. http://d-nb.info/1204200912/34.
Full text
8
Guenery, Pierre-Vincent. "Nanostructures d’oxyde d’indium pour les mémoires résistives RRAM intégrées en CMOS Back-End-Of-Line." Thesis, Lyon, 2019. http://www.theses.fr/2019LYSEI114.
Full textAbstract:
Les mémoires informatiques actuelles qui ne sont que l'extrême miniaturisation de la technologie développée dans les années 1960, atteignent des limites technologiques difficilement surmontables techniquement et très couteuses. Les mémoires doivent donc se réinventer par une modification profonde de leur forme, comme le développement de structures en 3 dimensions par exemple, ou par l'utilisation de technologies innovantes. C'est un phénomène récent dans le domaine des mémoires qui nous a intéressé au cours de cette thèse. Il consiste à maîtriser électriquement et de manière réversible la résistivité d'une structure pour coder de l'information de manière pérenne, d'où son nom de mémoires résistive non volatile. Un grand nombre de recherches sont menées pour comprendre et maîtriser cette technologie dont le principal défaut actuel est son manque de reproductibilité. Nous proposons une approche originale consistant à l'intégration de nanoparticules d'oxyde d'indium dans la structure d'une mémoire résistive qui est directement compatible avec les puces déjà existantes. L’intégration de particules a pour but d'aider à rendre ces mémoires plus homogènes par un contrôle du comportement électrique de la structure. L'étude menée porte dans un premier temps sur les défis liés à la fabrication de la mémoire et en particulier sur le dépôt de nanoparticules. Pour avoir un effet bénéfique, la fabrication de celles-ci doit être parfaitement maîtrisée. Nous détaillons ensuite à la caractérisation électrique des mémoires et à la compréhension des phénomènes qui sont à l’origine du changement de résistivité des matériaux afin de tenter de mieux les contrôlerThe current computer memories are nothing more than the extreme miniaturization of the technology developed in the 1960s. These memories reached technological limits that are technically difficult and very costly to overcome. Memories must therefore be reinvented by a profound change in their shape, such as the development of three-dimensional structures for example, or by the use of innovative technologies. A new physical phenomenon in the field of memories interested us during this thesis. It consists in an electrically and reversibly control of the resistivity of a structure that can reach at least two level to code the information in a durable way. These memories are called non-volatile resistive memories. A lot of research is being carried out to understand and control this technology. The main current defect of this emerging technology is its lack of reproducibility. We propose an original approach consisting in the integration of indium oxide nanoparticles into the structure of a resistive memory that is directly compatible with existing chips. The purpose of particle integration is to increase the homogeneity of these memories by controlling the electrical behaviour of the structure. The study initially focused on the challenges of memory manufacturing and in particular on the deposition of nanoparticles. To have a beneficial effect, the manufacture of these products must be perfectly controlled. The study then details the electrical characterization of the memories. We discuss about the phenomena that are at the origin of the change in resistivity in order to try to better control them
9
Cheng, You-Wei, and 鄭又瑋. "Oxide-Based Resistive Random Access Memory." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/52860599754950649604.
Full textAbstract:
碩士國立交通大學
顯示科技研究所
98
In this thesis, we demonstrate inorganic resistive random access memory (RRAM) using sputtered SiO2 thin films, and investigate the influences of electrical characteristics of the devices with various post-annealing conditions. The results show that devices with RTA treatment can exhibit better electrical characteristics, especially in the significant improvement of endurance. We also analyze carrier transport behaviors in the high conductance state of devices and propose carrier transport mechanisms under different RTA treatments. In addition, we fabricate two different structures of organic RRAM: AlOx/Alq3 bi-layer and Alq3/MoO3/Alq3 tri-layer structures. It is found that interface defects at the AlOx/Alq3 interface dominate the resistive switching of organic RRAM using the bi-layer structure, and the high ON/OFF current ratio near 106 is obtained; the switching behavior of organic RRAM using the tri-layer structure originate from carrier confinement barriers produced by the difference of energy bands between the nano-structure MoO3 and Alq3 layers, and this devices exhibit a high ON/OFF current ratio about 104 and provide many write-read-erase-read cycles.
10
Prakash, Amit, and AMIT PRAKASH. "Tantalum Oxide based Nanoscale Resistive Switching Memory Devices." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/95836377974390868649.
Full textAbstract:
博士長庚大學
電子工程學系
101
Resistive random access memory (RRAM) is a promising candidate for the next generation non-volatile memory applications due to its simple metal-insulator-metal structure, low voltage/current with high speed of operation, low power consumption, long endurance and good data retention. Tantalum oxide (TaOx) is one of the most suitable materials due to its ease of deposition, good thermal stability (>1000 oC) and having two stable phases which will help to achieve good resistive switching characteristics. In this study, resistive memory characteristics of TaOxbased devices in via-hole and cross-point structures have been investigated. Resistive memory characteristics of IrOx/TaOx/WOx/W structured memory device have been investigated and a route to improve the uniformity of key switching parameters like set/reset voltage, low/high resistance states as well as switching cycles is demonstrated by selecting the electro-formation polarity in the positive bias region. The memory devices were characterized by high-resolution transmission electron microscopy, energy dispersive X-ray spectroscopy, X-ray photo-electron spectroscopy and Auger electron spectroscopy (AES) analyses. The switching mechanism in both negative and positive voltage formed devices is explained by the filamentary conduction model with oxygen ion migration. The improvement in the case of positive formed devices is due to accumulation of O2- ions at the IrOx/TaOx interface, which acts as series resistance. The devices have shown good read endurance of >105 times and data retention of >104 s at 85 oC. In order to achieve resistive switching at low current, the memory devices with Ti as interfacial layer in W/TaOx/W and W/TaOx/TiN structures have been fabricated. The improvement is due to the defect formation in the TaOx film. The devices with TiN bottom electrode have shown good forming-free repeatable bipolar resistive switching at a small current of <50 μA with small operation voltage of ±2.5 V. The low resistance state is independent, whereas high resistance increases with decreasing device size from 8×8 to 0.15×0.15 μm2 which confirms filamentary conduction mechanism and will benefit small size (<0. 4 μm) devices in future. In addition, oxygen deficient conducting filament is investigated. Long pulse endurance of >104 cycles, data retention of >5 hours at 125 oC, read endurance of >105 cycles and high device yield of >95% have also been obtained. In order to achieve high density, devices in Ir/TaOx/W cross-point structure have been investigated. The devices exhibited good formationfree bipolar resistive switching with a low current compliance of 100 μA and a small operation voltage of ±2.5. The devices have shown narrow statistical distribution of low/high resistance states and set/reset voltage and multilevel capability by limiting the reset voltage. Robust pulse endurance of >106 program/erase cycles, read endurance of >106 times and data retention at 85 oC under a low current operation of <100 μA are also obtained. Novel sidewall small size devices (20 nm × 4 μm) with small switching current of 50 μA are explored in this study for future high density low power nanoscale nonvolatile memory applications.
11
Chen, Yi-Da, and 陳怡達. "Characteristics of Graphene-Oxide-Based Flexible Resistive Swithing Memory." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/64kyy9.
Full textAbstract:
碩士國立東華大學
電機工程學系
100
There are four sections in our thesis: Background and Motivation, Chapter 1 Introduction, Chapter 2 Experiment, Chapter 3 Result and Discussion, and Chapter 4 Conclusion. In Background and Motivation, we talk about the trend of 3C product and why we focus on resistive random access memory (RRAM) in our research. Chapter 1 we’ll talk about flash memory which is wide-used and wide-known. Chapter 2 we will discuss different type of next generation non-volatile memory, namely ferroelectric RAM, phase change memory, magnetoresistive RAM, and RRAM. Because RRAM has some advantages, such as low power consumption, high speed of read/write, can be made in nano scale, and the ability of multilevel operation. Therefore, we take RRAM as main point in our research. In Chapter 2, we’ll introduce fabrication equipment at first. Next, the preparation of grapheme oxide solution will be mention. Then, we talk about experiment process. Finally, we’ll have brief introduction of measure equipment and how it works. Chapter 3, the discussion will be divided into physical and electrical properties. Two type of our device structure will be shown in physical properties; In the other hand, electrical properties will take device which fabricated on PES as key point, meanwhile, operation with different polarity and current compliance will be discussed. After that, we will compare the properties of changing substrate and bottom electrode. Finally, a model will be presented for explanation. In our study, we drop some grapheme oxide solution on bottom electrode, then, put it into cabinets with natural dry. Resistive switching characteristic is found after finishing fabrication of top electrode. Device present some properties, including nonpolar switching, low reset voltage, 104 s of retention. Also, we find that bending and after bending conditions have better characteristics then before bending’s in endurance. In particular, bending condition can achieve over 650 times switching. By conduction mechanism and polarity/current compliance analysis, we infer that switching mechanism obey conduction filament theory. As for the influence of different bottom electrode, physical analysis show that some of bottom electrode will diffuse into grapheme oxide because of PH. This condition also changes device electrical properties. In conclusion, grapheme oxide prepared by drop and natural dry for RRAM device has some advantages, including easy fabrication, low reset voltage, and can be realized on PES substrate. Also, our device can pass bending test without any degradation. Means it does have the potential in future flexible electronics application.
12
Chan, Yi Chun, and 詹宜竣. "Gadolinium oxide based transparent resistive random access memory study." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/77715164221664958916.
Full textAbstract:
碩士長庚大學
電子工程學系
98
In recent years, resistive random access memory has been widely researched, based on its low operation voltage、short write/erase time、long storage time、nondestructive readout、multi-bit storage and simple structure will be as a candidate for next generation nonvolatile memory. In this thesis, we use pulsed laser deposition to deposit the gadolinium oxide as our resistive layer, combining with the transparent electrode “ITO” to carry out the full transparent resistive random access memory. However, according to some literature, whether the resistive layer is polycrystalline or not will influence our resistive switching properties. In this thesis, we varied the substrate temperature as RT, 200oC, 300oC during depositing Gd2O3 films, with material instrument such as SEM, XRD, and TEM, we could analyze the properties of thin films. At last, we use semiconductor I-V instrument to measure the resistive switching of our device. The electrical device properties of this three different deposition temperature, the effects of compliance currents, and the operation voltages are also analyzed. In addition, we also measure the reliability of our device, the result shows an excellent retention time. According to the data we see, the endurance of ITO/ Gd2O3 (300oC)/ITO demonstrates more than 2000 times, which is related to whether crystalline of film or not. However, the resistive switching properties of unipolar are not good enough. Hence, we should still investigate the resistive switching of unipolar. Based on the further research, it is expected that TRRAM can be as the next generation memory.
13
Hung, Zhi-Ting, and 洪誌廷. "HfOx-based resistive random access memory with oxide-based flexible selector." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/cfe39n.
Full textAbstract:
碩士國立交通大學
電子研究所
106
Resistive random access memory (RRAM) is the most promising nonvolatile memory in the future, due to its serval advantages, low power consumption, high operation speed and 3D compatible architecture……etc. However, RRAM array suffers from sneak path current issue. It will cause memory array reading error and extra power consumption. Selector is one of the solutions. After RRAM connects with selector in series, selector can effectively reduce leakage current. In this thesis, different oxides were deposited by sputtering as active layer of selector, and TaN was chosen as electrodes. First, TaO single layer was the only oxide and we adjusted different thickness to change electrical characteristics. Then, inserted different oxides to optimize its performance. In the same time we discussed the relationship between thickness combination and electrical characteristics. Therefore, we got 104 selectivity selector. Next we fabricated HfO-based RRAM. After optimization processes, the device operation current is match to the selector we had. Finally, these two devices are combined to form 1S1R structure. In the end, the ability of selector solving sneak path current issue and increasing the array size have been confirmed by simulation equation. If we set read margin at 10%, the array size increase to N = 3408 while single RRAM only has N = 5.
14
"Resistive Switching and Memory effects in Silicon Oxide Based Nanostructures." Thesis, 2012. http://hdl.handle.net/1911/70503.
Full textAbstract:
Silicon oxide (SiO x 1 ∠ x [∠, double =]2) has long been used and considered as a passive and insulating component in the construction of electronic devices. In contrast, here the active role of SiO x in constructing a type of resistive switching memory is studied. From electrode-independent electrical behaviors to the visualization of the conducting filament inside the SiO x matrix, the intrinsic switching picture in SiO x is gradually revealed. The thesis starts with the introduction of some similar phenomenological switching behaviors in different electronic structures (Chapter 1), and then generalizes the electrode-material-independent electrical behaviors on SiO x substrates, providing indirect evidence to the intrinsic SiO x switching (Chapter 2). From planar nanogap systems to vertical sandwiched structures, Chapter 3 further discusses the switching behaviors and properties in SiO x . By localization of the switching site, the conducting filament in SiO x is visualized under transmission electron microscope using both static and in situ imaging methods (Chapter 4). With the intrinsic conduction and switching in SiO x largely revealed, Chapter 5 discusses its impact and implications to the molecular electronics and nanoelectronics where SiO x is constantly used. As comparison, another type of memory effect in semiconductors (carbon nanotubes) based on charge trapping at the semiconductor/SiO x interface is discussed (Chapter 6).
15
Yang, Tun-Chih, and 楊敦智. "Oxide-based bipolar selector device for resistive switching memory applications." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/28unfb.
Full text
16
LIN, YU-SHENG, and 林裕勝. "Study of Copper Oxide-based Resistive Random Access Memory Devices." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/u3z6q9.
Full textAbstract:
碩士國立雲林科技大學
電子工程系
107
In this study, copper oxide films were deposited using radio frequency magnetron sputtering as resistive switching active layers. This thesis is divided into two parts. First, top electrode dependence of the resistive switching characteristics of the CuO-based RRAM devices was investigated. The results indicate that the conduction filaments of the Al/CuO/ITO RRAM device are composed of copper cations. The resistive switching behavior could be significantly improved because of the spontaneous formation of an AlxOy interfacial layer between the Al/CuO interface. The 300 °C-annealed Al/CuO/ITO RRAM device exhibits a resistive window of ~10^3. Second, to obtain the optimal CuO resistive switching layer, the as-fabricated CuO layers were annealed in ambient at temperatures of 250 °C, 300 °C, 350 °C, and 400 °C. The results show that the resistive switching characteristics of the 350 °C-annealed Al/CuO/ITO RRAM device was significantly improved. The resistive window was enlarged to 10^5. The surface morphology and the thickness of the CuO films were studied by using field emission scanning electron microscope (SEM). Ultraviolet-visible spectroscopy was used to obtain the transmittances and optical bandgaps of the CuO films. The chemical composition of the CuO films were characterized by using X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. The crystallinities of the CuO films were examined by X-ray diffraction (XRD). The electrical characteristics of the Al/CuO/ITO RRAM devices were measured using a Keysight B1500A semiconductor device analyzer.
17
CHEN, KUAN-CHIEH, and 陳冠傑. "Zirconium oxide-based resistive switching memory for neuromorphic computing applications." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/q847ky.
Full textAbstract:
碩士國立交通大學
電子研究所
107
Resistive random access memory (RRAM) is the most promising nonvolatile memory in the future, due to its serval advantages, low power consumption, high operation speed, and 3D compatible architecture……etc. Another potential application of RRAM is to implement it to neuromorphic computing. To use RRAM as an electronic synapse, it should perform the capability of gradual resistance change. Furthermore, some electrical properties and metrics need to be considered, e.g., linearity, symmetry, dynamic range, etc. Many papers conclude that the higher linearity of resistance change, the better the learning accuracy we can achieve in the machine learning task. In this thesis, we mainly focus on ZrOx-based RRAM, trying to improve the nonlinearity by device design engineering. Firstly, by changing the bottom electrode from Pt to TiN, we successfully demonstrate ZrOx-based RRAM with gradual resistivity change. In addition, we propose a mechanism to explain the difference. Secondly, by introducing additional post-deposition annealing, the nonlinearity of the weight update is further improved from >9 to 4.45 for potentiation; >9 to 5.29 for depression. This can be explained by interface oxygen vacancies due to the formation of the TiON layer after annealing. In the third part, based on the previous report, a methodology to improve the nonlinearity, we used the AlOx as a barrier layer, because AlOx has low ion mobility due to the ALD process. By stacking AlOx under ZrOx, we obtained the bilayer structure RRAM. Compared to the single layer (ZrOx) device, the nonlinearity was further improved to 3.94 and 2.42 for potentiation and depression, respectively, and the methodology was confirmed. Additionally, with process parameter optimized, we have fabricated a synaptic RRAM with high linearity weight update, which nonlinearity is 1.3 for potentiation, and 1.82 for depression. In the future, this can be further applied to the neuromorphic computing system to serve as the electronic synapse.
18
Wu, Yan-ze, and 鄔晏澤. "Single-layer Magnesium Oxide Based Selectors for Resistive Switching Memory Applications." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/sk2gz7.
Full text
19
Wu, Hsiao-Yu, and 吳効諭. "Characteristics of Graphene-Oxide-Based Transparent and Flexible Resistive Switching Memory." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/58410395296700942141.
Full textAbstract:
碩士國立東華大學
電機工程學系
103
With the rapid development of electronics, the enhancement of memories such as high speed and high capacity are needed. The new generation non-volatile memory, resistive random access memory, is attracted with high speed, high density, and the most important is simple structure. In addition to many advantages, resistive random access memory has chance to replace DRAM and Flash. Also with the evolution of technology, innovation has become an important part, so transparent electronics and flexible electronics are attracted currently. In this study, the transparent and flexible resistive random access memory is fabricated. ITO/GO/ITO structure device is the main study and fabricate Cu/GO/ITO structure device for studying the difference between transparent and metal electrodes. ITO/GO/ITO device has great flexibility, the current distributions have no difference through bending test. But the HRS current distributions of Cu/GO/ITO device increase when going through bending test. The set voltages of two devices have no difference, but the reset voltage of ITO/GO/ITO device is 1 V to 2 V smaller than Cu/GO/ITO device. And the retention time of both devices reach to 105 s. ITO/GO/ITO device is a transparent device. Under visible light region, blue and purple lights only reach to 50% of transmittance, but others all reach to 80% of transmittance or more. Even if the ratio of HRS current and LRS current of ITO/GO/ITO device is not as large as Cu/GO/ITO device, but overall, ITO/GO/ITO device is with great characteristics and with high development potential.
20
Lin, Kuan-Yu, and 林冠佑. "Study on the Resistive Switching Characteristics of the Hafnium Oxide-Based Resistive Random Access Memory (RRAM) Devices." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/49820684399286580176.
Full text
21
Wang, Sheng-Yu, and 王聖裕. "Interface Engineering in Binary Metal Oxide Based Resistive Random Access Memory (RRAM) Devices." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/93271143684927430053.
Full textAbstract:
博士國立交通大學
電子研究所
99
Due to the popularity of consumer electronic products, such as mobile phone, laptop, and USB storage devices, the demand of nonvolatile memory (NVM) increases significantly with the years in the semiconductor industry. The mainstream of NVM nowadays is flash memory. The primary structure of flash memory is a MOSFET-like transistor with an inner floating gate. Based on the basic principle in flash memory, the logic high or low is determined by charges stored in the floating gate or not, which further alters the threshold voltage of the MOSFET-like transistor. The flash memory, however, has some drawbacks such as high operation voltage, low operation speed, and poor endurance. In addition, when the device dimensions are continuously scaled down, the flash memory faces the challenge of thin tunneling oxide that causes an unsatisfactory retention time. Consequently, there are many proposals for novel NVMs such as ferroelectric random access memory (FeRAM), magnetroresistive random access memory (MRAM), phase change random access memory (PCRAM), and resistive random access memory (RRAM). RRAM primarily utilizes reversible resistive switching (RS) between the different resistance states to write/erase the user’s information, where the RS can be easily performed by applying voltage or current pulses. The RRAM device with a simple metal-insulator-metal structure has the merits of nondestructive readout, multi-level storage, high-density integration, and compatibility of the complementary metal oxide semiconductor (CMOS) process. So far, the RS phenomena have been observed in many materials, such as organic molecular, solid state electrolytes, perovskite materials, transition metal oxides, etc. However, several obstacles still need to be overcome in RRAM before realizing commercial applications, including the operation speed/voltage, the data retention time, and the related reliability issues. In this dissertation, the research purpose focuses on the interface engineering in the ZrO2- and CuxO-based RRAM devices. Due to the oxygen-gettering ability of the Ti top electrode, the self-aligned interface between Ti and oxide film serves as a series resistance and an oxygen sink. While applying the bipolar voltage sweeps, the interfacial oxygen migration would cause the redox reaction within the conducting filaments, leading to the formation and rupture of the conducting filaments. The effective RS region is suggested to be confined near the interface layer so that the RRAM device possesses lower variations of RS parameters. Moreover, we proposed a simple method to produce the various interface thicknesses within Ti/ZrO2 by changing the thickness of the Ti top electrode. The forming voltages and bias-polarity relation of the RS behaviors are found to be affected by the interface thicknesses between Ti and ZrO2 films. During the successive RS cycles, we also deduced that the evolution of the interface thickness has a significant influence on the device reliability. Some measurements related to the conduction mechanisms and reliability tests, such as data retention time, multi-level storage, nondestructive readout, and endurance cycling properties, are investigated in this thesis as well. To further improve the RS characteristics in RRAM, a simple and effective method was also proposed to control the oxygen vacancies in the ZrO2-based film by introducing an embedded a Mo metal layer. It shows that the forming process can be removed by inserting an embedded Mo metal within ZrO2 via a post-annealing process. Based on the experimental results, the embedded Mo serves as an oxygen getter, causing more oxygen vacancies to form within the ZrO2 layer. These controllable oxygen vacancies not only facilitate the formation of conducting filaments but also improve the memory performance in the ZrO2-based devices. Accordingly, our research indicates promise for the realization of RRAM by efficiently controlling the oxygen vacancies inside the oxide layer. At the end of this dissertation, the conclusion and the suggested future work are presented. We expect to confine the RS region by introducing the artificial extrinsic defects in RRAM devices and to further enhance their performance and reliability for next-generation NVM applications.
22
Cheng, Chun-Hu, and 鄭淳護. "Investigation of Low Power Germanium-Oxide-Based Non-Volatile Resistive Random Access Memory." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/81500829077433946129.
Full textAbstract:
博士國立清華大學
電子工程研究所
100
Although novel resistive random access memory (RRAM) with 3D integration shows high potential for down scaling beyond charge-trapping flash (CTF) nonvolatile memory (NVM) at sub-25 nm nodes, the large forming voltage, high set/reset currents, poor switching uniformity and low cycling endurance are other challenges. In this dissertation, it is demonstrated ultra-low power nonvolatile RRAM devices with superior memory characteristics can be achieved by using stacked metal-insulator-metal (MIM) structures with covalent-bond germanium oxide (GeOx) and oxygen-deficient metal oxides (e.g., HfON, TaON, SrTiO3, TiO2). These low-power RRAM devices show excellent resistance switching characteristics such as large high- to low-resistance state (HRS/LRS) ratio of >100X, good data retention, fast speed of <100 ns and cycling endurance of >10^6 cycles. Our studies reveal that hopping conduction mechanism in LRS provides a large internal resistance to reach low self-compliance switching set/reset currents. Using novel stacked GeOx on metal-oxide SrTiO3 to form the cost-effective Ni/GeO/SrTiO/TaN resistive switching memory, low set power of small 4 uW, reset power of 16 pW, good data retention at 85C, fast 50 ns switching time and good 106 cycling endurance are realized. Another technique used for further saving power is to employ HfON to replace of narrow-bandgap SrTiO3, which can lower set power to sub-uW and reach ultra-low 8 fJ switching energy. The improved 125C retention than previous GeOx/SrTiO3 RRAM can be ascribed to higher activation energy to maintain stable resistance state under high-temperature retention test. Furthermore, the high performance GeOx/HfON RRAM has been demonstrated on low-cost Polyimide substrate. Only very low set poer of 4.8 uW and reset power of 1 nW are needed to reach bi-stable resistance state, which lead to a large memory window with HRS/LRS ratio of 9x10^2. Also, good retention of 85C for 10^4 sec and excellent endurance of 10^5 cycles at a fast 50 ns are obtained simutaneously. To further imporve switching stability and cycling endurance, we propose a tri-layer RRAM using nano-crystal TiO2 and TaON buffer layer, the Ni/GeOx/nc-TiO2/TaON/TaN RRAM shows the self-compliance set/reset currents, low 0.7-pJ switching energy, narrow current distribution and long 10^10 cycling endurance. Such long endurance is 5 orders of magnitude higher than the existing Flash memory at the close sub-pJ switching energy.
23
Chen, Chun-Ching, and 陳鈞罄. "Investigation on Resistive Switching Characteristics of Amorphous Oxide Based Resistive Random Access Memory Combined with Thin-film Transistor." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/97294k.
Full textAbstract:
碩士國立交通大學
光電工程研究所
103
Many types of consumer electronics products require high-capacity memory with the development of the technology, in which demanding for non-volatile memory is the largest. Flash memory face the issue of scale limit, so the research of next generation non-volatile memory is booming. The resistive switching random access memory (RRAM) have these advantages, such us high operation speed, low power consumption, high cell density, and lower scale limit and non-destructive readout, rhich have the opportubity to become the mainstream of next generation non-volatile memory. The purpose of this thesis is to develop a reliable 1T1R of a-AlZnSnO based resistive switching memory and thin-film transistor. No matter we focus on resistance random access memory of thin-film transistor, many study show that the well-known amorphous InGaZnO (a-IGZO) film exhibit remarkable characteristics on both filed. It is expected to be the potential candidate for thin film transistors in next-generation flat-panel displays, including resistive random access memory, light-emitting diode displays and three-dimensional displays, due to its high mobility and good transparency to visible light. Therefore, RRAM devices using IGZO films as switching layer are worthy of developing for future system-on-panel (SOP) applications. However, the target materials that comprise indium (In) and gallium (Ga) are in great demand for use in the manufacture of optoelectronic devices, such as thin film transistors, light-emitting diodes, lasers, solar cells, and radio-frequency (RF) circuits. From these considerations, In- and Ga-free TAOS materials(AZTO) are utilized to demonstrated Characteristics of 1T1R of a-AZTO based RRAM and TFT for the lower material cost. In addition, it also has the benefit of simplifying the flow, and cuting down the cost for future system-on-panel (SOP) applications. This thesis divides two parts. First part, we improve the resistive switching uniformity for Al-Zn-Sn-O-based memory device with inserting HfO2 layer. Second part, we perfectly integrate a-AZTO based Resistive Switching Memory and thin-film transistor through localizing the oxygen vacancy of RRAM. A lower power consumption and superior uniform statistical distribution of resistance states and operation voltage on HRS and LRS are shown for the bi-layer structure. Besides, it also shown good cycling endurance and data retention. We also analyze the mechanism through the XPS spectrum. In the final of the first part, we further optimize the resistive memory to perfectly combine with the thin-film transistor (including the ambient of manufacture process and the thickness of switching layer). In the second part, our 1T1R device could efficiently control overshoot current and show low power consumption (~μA), repeated endurance cycles (〖10 〗^7 times), and stable retention characteristics (over 〖10〗^4 seconds for 85℃). In addition, we demonstrate the multi-level operation through control the gate voltage, which changethe drain current and caus e different resistance of RRAM. Finally, because the whole fabricating process of the RRAM device is under low temperature, (the annealing temperature of thin-film transistor is 450℃, RRAM is prepared at room temperature.) it holds the potential for flexible electronics applications. Furthermore, due to the resistive switching memory and thin-film transistor are both a-AlZnSnO base, it has the ability to develop future system-on-panel (SOP) because of the transparence, high mobility, uniformity of amorphous state. Beside, it also has the benefit of simpler flow, and lower cost.
24
Chen, Po-Hsun, and 陳柏勳. "Study on Fabrication Process and Resistive Switching Mechanism of Indium-tin-oxide-based Resistive Random Access Memory Device." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/t35q72.
Full textAbstract:
博士國立中山大學
物理學系研究所
106
With the advent of advanced technologies such as the Internet of Things (IoT), artificial intelligence (AI), and cloud computing, huge amounts of data are continuously produced. The demand for memory, therefore, is dramatically increasing. Traditional flash memory currently faces severe challenges when device size shrinks. A thin tunneling oxide layer may cause severe leakage path issues, resulting in degradation of data retention and component reliability. Therefore, it is imperative to develop a new generation of memory. Among next generation memories, the resistive random access memory (RRAM) has the advantages of being simple metal-insulator-metal structure, as well as having low power consumption and high operation performance, factors which are important in becoming a building block for the new generation of memory devices. In this thesis, we applied an indium tin oxide (ITO) thin film as the electrode in a HfO2-based RRAM to investigate its resistance switching (RS) characteristics. The experimental results show that, compared to a traditional inert metal electrode, the ITO electrode has robust RS characteristics and better reliability. Both lower operating current and faster operating speed can be achieved simultaneously. On the basis of electrical measurements, we conclude that the oxygen ions can enter the ITO electrode by the given electric field, thus forming a semiconductor-like ITO region. This also causes the effects of a self-compliance current and low power consumption. In addition, due to the bulk oxygen-ion storage in the ITO electrode, the device exhibits better RS performance. Since the transition element has a semi-full electron orbital region, it easily forms bonds with oxygen ions. We, therefore, doped gadolinium (Gd) into the ITO electrode as a ITO:Gd combination to examine the RS mechanism in the HO2-based RRAM. The experimental results show that the ITO:Gd device can produce a high memory window at a low operating current. By means of the current fitting method and a temperature effect experiment, we are able to confirm that a modification in the conducting mechanism has occurred, from the Ohmic conducting mechanism in the pure ITO electrode to Schottky emission in the ITO:Gd electrode. We conclude that the ITO:Gd electrode has better bonding ability with oxygen ions due to the Gd doping, which in turn allows the ITO:Gd device to have better resistance switching characteristics. Since the ITO material also possesses semiconductor characteristics, we have also attempted co-sputtering the ITO thin film with nitrogen gas as the ITON thin film to act as the insulator layer of RRAM, thereby further simplifying the device fabrication process. Experimental results shown that the ITON thin film can also induce RS characteristics. In addition, a lower operating voltage can be achieved with only ±3 volts to complete the forming, set, and reset operations. Apart from this gas co-sputtering method, we also introduced an oxygen plasma treatment to oxidize the ITO thin film as the insulator in the RRAM. The experimental results show that the oxidized ITO thin film exhibits an insulator-like property and exhibits good RS characteristics. Both DC and AC electrical measurements were conducted to verify the continuous RS characteristics. Finally, a conducting model is proposed to explain the possible RS mechanism on the basis of the current fitting method and a temperature experiment.
25
Lin, Nian-Cin, and 林念親. "Research of Graphene-Oxide-Based Flexible Resistive Switching Memory Fabricated by Spin-Coated Method." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/46456761397001704315.
Full textAbstract:
碩士國立東華大學
電機工程學系
101
This thesis is divided into four chapters. The first chapter introduces the background, motivation, characteristic of graphene oxide, and operation of resistive random access memory. The second chapter is the experimental procedures, including the describing of experimental instruments, and electrical measurement methods. The third chapter discusses the physical analyses and electrical analyses of the samples fabricated on both silicon and flexible substrates. Then, bending tests were performed on the flexible sample, and a possible resistive switching model is proposed. Finally,the improvement on the graphene-oxide-based devices fabricated by dripping and spin coating methods are proposed. The last chapter is a conclusion of the characteristics and the improvement of the flexible devices. In this study, the graphene-oxide-based resistive random access memory was fabricated on both silicon and flexible substrates by spin coating method. The device performs bipolar resistive switching characteristics. For electrical measurements of the samples bending and after bending, the currents of high resistance state increase and become more stable.The retention time is over 10^5 seconds for flexible samples. For the second bending test, the currents of the high resistance state increase again slightly. We infer that bending stress generates some defects, which makes the conductive filaments formed easily. That is why the device become stable. Based on the experimental results, the flexible graphene-oxide-based resistive random access memory has considerable potential in flexible electronics in the future.
26
Huang, Chun-Yang, and 黃駿揚. "Fabrication and Characterization of Transition Metal Oxide Based Resistive Switching Memory with High Reliability." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/9jv2se.
Full textAbstract:
博士國立交通大學
電子工程學系 電子研究所
103
In this thesis, the improvement of reliability in transition metal oxide (TMO) based resistive switching random access memory (RRAM) device was investigated. In the first part, we discussed the thermal stability of HfO2 RRAM device after annealing process. Due to the low crystallization temperature (<400 oC) in the HfO2 RRAM device, it shows wider variations in both high resistance state (HRS) and low resistance state (LRS). Therefore, we use the atomic layer deposition (ALD) system to grow a series of complex HfO2/Al2O3 layer by layer thin film (HfxAlyO) for RRAM device. The experimental results show that the crystallization temperature and forming voltage of HfO2 based RRAM devices can be modulated by changing the number of Al2O3 layers in HfO2 film during ALD deposition. Besides, compared with pure HfO2 device, the Hf0.7Al0.3O devices shows a significant improvement in resistive switching properties. In the second part, we fabricated the ZrO2/HfO2 bilayer RRAM device for large endurance property. The bilayer structure shows the double forming process phenomenon. We explain the phenomenon by using conductive filament model and energy band diagram. A TiON interfacial layer is formed between HfO2 layer and TiN bottom electrode, which will be a tunneling barrier during the first forming process when a negative voltage applied on the device, while it will breakdown when applying a positive voltage. Besides, due to the double forming process, the point for formation and rupture of the conductive filament can be confined at the interface between HfO2 and ZrO2. It can suppress the consumption of oxygen ions during endurance test. It solved the problem of oxygen ions will release from electrode during resistance switching. Therefore, this ZrO2/HfO2 bilayer RRAM device can improve the reliability property especially in endurance characteristic. In addition, based on the concept of suppressing the consumption of oxygen ions in the second part, we fabricated the well aligned and extremely dense Ga doped ZnO nanorods (GZO) structure. The GZO nanorods can be used as a thin film with highly preferred orientation for RRAM device. Therefore, the oxygen vacancies can be confined and migrate along grain boundaries in the GZO nanorod film. Hence, the weakest point for formation and rupture of conductive filament can be limited at the interface between GZO nanorod film and ZnO seeding layer. A significant improvement in endurance reliability is demonstrated in the GZO nanorod device. On the other hand, the GZO RRAM device shows fully transparent property and it is a good candidate for future transparent RRAM application.
27
Cheng-HanLin and 林承翰. "Investigation of Oxide-Based Materials Applied to Resistive Random Access Memory with Structure of Capacitor." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/9ytdhq.
Full text
28
Pei-HsuanChiu and 邱培軒. "Investigation of Ga2O3 -based oxide semiconductors on Hydrogen Generation, Resistive Random-Access Memory and Phototransistor." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/xygrux.
Full text
29
Branca, Nuno Miguel de Almeida Casa. "Memristor based on amorphous zinc-tin oxide Schottky diodes." Master's thesis, 2019. http://hdl.handle.net/10362/75825.
Full textAbstract:
This work reports the fabrication and characterization of metal-insulator-metal (MIM) structures based on Schottky junction between platinum and zinc-tin oxide (ZTO) for memristor application. The devices were produced exclusively by physical vapor deposition methods at room temperature (RT). Before evaluating memory performance, these devices were first characterized in their pristine state as diodes. It was studied how the addition of an intermediate step of oxygen plasma treatment on the platinum surface, as well as the influence of oxide film thickness impact device performance.
The produced memristors exhibited a very distinct operation dynamic on the reset process depending on the voltage signal applied in the electroforming process. When the voltage coincides with the forward direction of the diode the reset process runs in gradual analogic way; otherwise the reset process runs in a threshold manner, like the set process in both cases. Oxygen plasma treatment tends to improve the analog mechanism in terms of operation window, regardless of thickness. However, the stability of resistive RAM operation is improved with thicker devices.
30
Paulo, João Francisco Carvalho. "Resistive switching RAM devices based on amorphous oxide semiconductors for system on panel applications." Master's thesis, 2019. http://hdl.handle.net/10362/91292.
Full textAbstract:
This work reports the mask design, fabrication and characterization of memristor
devices with diode like electrical behavior at pristine state. It is due to the presence
of Schottky junctions between Zinc-tin-oxide (ZTO) and platinum - Indium-galliumzinc-
oxide (IGZO) and molybdenum oxide for two different Metal-Insulator-Metal (MIM)
configurations. The devices were exclusively produced using physical vapor deposition
processes without intentional heating. Typical advanced electrical analysis of ReRAM
device was performed.
The Pt-ZTO-TiAu devices showed pinched hysteresis properties with large Ron=of f
ratio, fast switching which can be controlled in a digital SET and analog RESET operation.
However, large device-to-device variations and stability are the main issues which is due
to the processing.
On the other hand, the Mo-IGZO-Mo devices showed a small Ron=of f ratio and only
analog operation. There was a high yield and stability. However, using DC sweep for
cycling led to a charging phenomenon. Using SET/RESET pulses, the devices sustain
hundreds of cycles without deterioration or movement of the resistance states, showing
great resilience and retention.
31
Fan, Yang-Shun, and 范揚順. "Investigation of Low-Power High-Density and Low-Cost Amorphous Oxide Semiconductors-based Resistive Random Access Memory Technology." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/xjpy9c.
Full text
32
WANG, MING-HUI, and 王銘徽. "Study on Resistive Switching Mechanism of Oxide-based and Supercritical Fluid Sulfuration Effect on Resistance Random Access Memory." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/19720483662697990876.
Full textAbstract:
碩士國立高雄師範大學
化學系
104
Abstract The experiment successfully prepared a CBRAM device with resistive switching characteristics. The device was fabricated by sputtering a 13nm hafnium oxide layer followed by a copper layer on top of a pre-existing titanium nitride layer using a multi-target magnetron sputter system. The titanium nitride serves as the bottom electrode and the copper serves as the top electrode forming the Cu/HfO2/TiN device structure. Besides using photolithography to pattern via sizes, multi-target magnetron sputtering was used to deposit the copper bottom electrode. In addition, high-density plasma chemical vapor deposition system was applied for the insulation layer, and the inductively coupled plasma etch system was used to etch and form via hole formation. Finally in the intermediate layer SiO2 sputtering a layer of copper as the electrode. Other than this fab process, a supercritical fluid curing technique successfully completes the vulcanization process. The Agilent B1500A was used to measure changes in resistance in the SiO2 insulating layer. Conduction mechanism fitting and resistance switching mechanism were further confirmed based results of electrical measurements.
33
Franco, Miguel Alexandre Martins. "Resistance Switching Memory Devices based on Zinc Oxide Nanoparticles on Paper Substrates." Master's thesis, 2016. http://hdl.handle.net/10362/21756.
Full textAbstract:
This work reports the development of resistive random access memory (RRAM) on paper using printed Zinc Oxide (ZnO) nanoparticles (NPs) as active layer. RRAM is a novel technology having attracted increasing attention due to their high-speed operation, high-density storage, and low voltage. Most important, due to its characteristics it could replace flash technology which suffers from low endurance, low write speed, and high voltages required for the write operations.
Screen printing was chosen because of its versatility in terms of ink viscosity, which is compatible with inks that require low annealing temperatures. The architecture adopted consists in a mixture of ZnO NPs and ethyl cellulose (EC), used as binder, between electron beam evaporated platinum bottom electrode and screen-printed carbon or silver top electrode.
The resistive memory device can be programed in bipolar for at most 20 cycles. The retention time of the bipolar switching for both on/off states is reached up to 10 Ks. The operating voltages of SET and RESET is high ~ 20 V and - 10 V respectively. A transition between bipolar switching to unipolar is observed. It is suggested that an instable bipolar resistive switching is due to growth of filaments during cycles. The required voltages for on/off states fluctuate in the range of ~ 5 V which is a strong evidence of non-consistent bipolar resistive switching.
34
Chia-HangCheng and 鄭佳航. "The prospective study of nickel oxide-based resistive random-access memory (RRAM) fabricated on the thru-silicon via (TSV) structure." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/dvn733.
Full textAbstract:
碩士國立成功大學
微電子工程研究所
105
Through Silicon Via (TSV) technology vertically connects the chips arranged in stack, which helps to enhance the chip performance by greatly shortening the length of the conducting wire. On the other side, as the development of memory constantly aiming for faster memory devices with high storage capacity, Resistive Random Access Memory (RRAM) is considered the nonvolatile memory of next generation. It is foreseeable in a near future that the possibility of integrating the TSV platform with RRAM components may one day come to a reality! Therefore, the purpose of this thesis is to evaluate the plausibility of this merger. First, nickel oxide based RRAMs with four different electrode structures were fabricated, of which nickel oxide was grown using a radio frequency magnetron sputtering method. The properties and stability of these four different types of RRAM were evaluated. The platinum was chosen as the top and bottom electrode for RRAM integrated with the TSV structure, and the resultant current-voltage characteristics were duly measured. As for the endurance test, it was stably enough to achieve 100 cycles, and the current contrast ratio between the high and low resistance setting at 0.1V was found to be at least two orders of magnitude. Its set and reset voltage showed a stable normal distribution. Furthermore, the retention time reliability test also demonstrated that the memory window still maintains its excellent storage characteristics after more than 10,000 seconds. Finally, a series of curve fittings was applied to analyze the XPS data set in order to discuss the internal leakage current mechanism.
35
Chen, Min-Chen, and 陳敏甄. "Study on the Fabrication and Electrical Characteristics of the Advanced Metal-oxide-based Resistive Random Access Memory and Thin-Film Transistors Devices." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/82778876563558987450.
Full textAbstract:
博士國立中山大學
物理學系研究所
99
In first part, the supercritical CO2 (SCCO2) fluid technology is employed to improve the device properties of ZnO TFT. The SCCO2 fluid exhibits liquid-like property, which has excellent transport ability. Furthermore, the SCCO2 fluid has gas-like and high-pressure properties to diffuse into the nanoscale structures without damage. Hence, the SCCO2 fluid can carry the H2O molecule effectively into the ZnO films at low temperature and passivate traps by H2O molecule at low temperature. The experimental results show that the on current, sub-threshold slope, and threshold voltage of the device were improved significantly. Next, the electrical degradation behaviors and mechanisms under drain bias stress of a-IGZO TFTs were investigated. A current crowding effect and an obvious capacitance-voltage stretch-out were observed after stress. During the drain-bias stress, the oxygen would be absorbed on the back channel near the drain region of IGZO film. Therefore, the carrier transport is impeded by the additional energy barrier near drain region induced by the adsorbed oxygen, which forms a depletion layer to generate the parasitism resistance. We also investigated the RRAM device based on IGZO film, and proposed the related physical mechanism models. The IGZO RRAM will be very promising for integration with IGZO TFTs for advanced system-on-panel display applications to be a transparent embedded system. In this part, the transparent RRAM device with ITO/IGZO/ITO structure was fabricated. The proposed device presents an excellent bipolar resistive switching characteristic and good reliability. The bipolar switching mechanism of our device is dominated by the formation and rupture of the oxygen vacancies in a conduction path. The influence of electrode material on resistance switching characteristic is investigated through Pt/IGZO/TiN and Ti/IGZO/TiN structure. As the bias applied on the Ti or TiN, the Ti or TiN electrode can play the role of oxygen reservoir to absorb/discharge oxygen ions. Therefore, the device presents a bipolar resistive switching characteristic. However, as the bias applied on the Pt electrode, the device presents a unipolar resistive switching characteristic. Because the Pt electrode can’t store the oxygen ion, the device should use the joule heating mode to rupture the conduction path and present the unipolar resistive switching characteristic. Finally, the resistive switching properties of IGZO film deposited at different oxygen content were investigated, since the resistance switching behaviors are related to the formation and rupture of filaments composed of oxygen vacancies in the IGZO matrix. Experiment results show that the HRS current decreases when the oxygen partial pressure gradually increases. Based on the XPS analysis, these phenomena are related to the non-lattice oxygen concentration. With increasing oxygen ratio, the filaments will rupture completely through the abundant non-lattice oxygen inducing oxidation, which leads to HRS current decrease and an increase in the memory window.
36
Huang, Yi-Chung, and 黃一中. "A study on conduction current mechanism investigation and reliability improvement induced by supercritical fluid treatment in Hafnium oxide-based Resistive random-access memory." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/17542388235874369352.
Full textAbstract:
碩士國立高雄師範大學
化學系
104
In order to understand the unstable configuration that occurs when measuring Pt / HfO2 / TiN device, in this experiment use the water-gas treatment on Pt / HfO2 / TiN device, and with conduction mechanisms and materials analysis, plus the member has bipolar operation characteristics, to establish a model of a hydrogen ion, and the first use of C-V frequency measurement technology; confirm the capacitance value of the water-gas treatment scale value when the difference between high and low frequency measurements, and thus verify changes in the element hydrogen ions caused. In previous laboratory studies, we can see that nitrogen for oxygen ions have a good stable results, so combining low temperatur supercritical technology combining , low temperature for HfOx device do combining with supercritical ammoniated, and by measuring the difference between the degree of reliability, explained by the model,that after the low temperatur supercritical ammoniated change the electrical conduction mechanism with Naicao element. Finally, research Pt / HfO2 / TiN device in the process of continuous operation after the deterioration, with analyzing the electrical conduction mechanism is due to the change in the number of oxygen ions during operation can be controlled, resulting in wire resistance caused by diverging retreat becomes difficult leading to deterioration by reliability and Naicao metric, use measurements to understand the operating times and temperatures for the deterioration of relations, and Pt / HfO2 / TiN device after low temperature supercritical ammoniated, change the properties of its.