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Journal articles on the topic 'OxRAM - oxide-Based resistive memory'

Author: Grafiati

Published: 4 June 2021

Last updated: 1 February 2022

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1

Pedró, Marta, Javier Martín-Martínez, Marcos Maestro-Izquierdo, Rosana Rodríguez, and Montserrat Nafría. "Self-Organizing Neural Networks Based on OxRAM Devices under a Fully Unsupervised Training Scheme." Materials 12, no. 21 (October 24, 2019): 3482. http://dx.doi.org/10.3390/ma12213482.

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A fully-unsupervised learning algorithm for reaching self-organization in neuromorphic architectures is provided in this work. We experimentally demonstrate spike-timing dependent plasticity (STDP) in Oxide-based Resistive Random Access Memory (OxRAM) devices, and propose a set of waveforms in order to induce symmetric conductivity changes. An empirical model is used to describe the observed plasticity. A neuromorphic system based on the tested devices is simulated, where the developed learning algorithm is tested, involving STDP as the local learning rule. The design of the system and learning scheme permits to concatenate multiple neuromorphic layers, where autonomous hierarchical computing can be performed.

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2

Bocquet, Marc, Hassen Aziza, Weisheng Zhao, Yue Zhang, Santhosh Onkaraiah, Christophe Muller, Marina Reyboz, Damien Deleruyelle, Fabien Clermidy, and Jean-Michel Portal. "Compact Modeling Solutions for Oxide-Based Resistive Switching Memories (OxRAM)." Journal of Low Power Electronics and Applications 4, no. 1 (January 9, 2014): 1–14. http://dx.doi.org/10.3390/jlpea4010001.

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3

Yang, Yuchao, Patrick Sheridan, and Wei Lu. "Complementary resistive switching in tantalum oxide-based resistive memory devices." Applied Physics Letters 100, no. 20 (May 14, 2012): 203112. http://dx.doi.org/10.1063/1.4719198.

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4

Liu, Xinjun, Sharif Md Sadaf, Sangsu Park, Seonghyun Kim, Euijun Cha, Daeseok Lee, Gun-Young Jung, and Hyunsang Hwang. "Complementary Resistive Switching in Niobium Oxide-Based Resistive Memory Devices." IEEE Electron Device Letters 34, no. 2 (February 2013): 235–37. http://dx.doi.org/10.1109/led.2012.2235816.

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5

Huang, Yong, Zihan Shen, Ye Wu, Xiaoqiu Wang, Shufang Zhang, Xiaoqin Shi, and Haibo Zeng. "Amorphous ZnO based resistive random access memory." RSC Advances 6, no. 22 (2016): 17867–72. http://dx.doi.org/10.1039/c5ra22728c.

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6

Zhao, Enming, Shuangqiang Liu, Xiaodan Liu, Chen Wang, Guangyu Liu, and Chuanxi Xing. "Flexible Resistive Switching Memory Devices Based on Graphene Oxide Polymer Nanocomposite." Nano 15, no. 09 (September 2020): 2050111. http://dx.doi.org/10.1142/s1793292020501118.

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Flexible resistive switching memory devices based on graphene oxide (GO) polymer nanocomposite were prepared on flexible substrate to research the influence of bending on resistive switching behavior. The devices showed evident response in resistive switching memory characteristics to flexible bending. The 2000 cycles flexible bending leads to the switch of resistive switching memory characteristic from write-once-read-many time memory (WORM) to static random access memory (SRAM). Both WORM and SRAM memory properties are all repeatable, and the threshold switching voltage also showed good consistency. The resistive switching mechanism is attributed to the formation of carbon-rich conductive filaments for nonvolatile WORM characteristics. The bending-induced micro-crack may be responsible for the partial broken of the electrical channels, and may lead to the volatile SRAM characteristics.

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7

Choi, Shinhyun, Jihang Lee, Sungho Kim, and Wei D. Lu. "Retention failure analysis of metal-oxide based resistive memory." Applied Physics Letters 105, no. 11 (September 15, 2014): 113510. http://dx.doi.org/10.1063/1.4896154.

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8

Bishop, S. M., H. Bakhru, S. W. Novak, B. D. Briggs, R. J. Matyi, and N. C. Cady. "Ion implantation synthesized copper oxide-based resistive memory devices." Applied Physics Letters 99, no. 20 (November 14, 2011): 202102. http://dx.doi.org/10.1063/1.3662036.

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9

Seul Ki Hong, Ji Eun Kim, Sang Ouk Kim, Sung-Yool Choi, and Byung Jin Cho. "Flexible Resistive Switching Memory Device Based on Graphene Oxide." IEEE Electron Device Letters 31, no. 9 (September 2010): 1005–7. http://dx.doi.org/10.1109/led.2010.2053695.

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10

Rani, Janardhanan R., Se-I. Oh, Jeong Min Woo, and Jae-Hyung Jang. "Low voltage resistive memory devices based on graphene oxide–iron oxide hybrid." Carbon 94 (November 2015): 362–68. http://dx.doi.org/10.1016/j.carbon.2015.07.011.

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11

Lee, Ke-Jing, Yu-Chi Chang, Cheng-Jung Lee, Li-Wen Wang, and Yeong-Her Wang. "Resistive switching properties of alkaline earth oxide-based memory devices." Microelectronics Reliability 83 (April 2018): 281–85. http://dx.doi.org/10.1016/j.microrel.2017.06.080.

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12

Bin Gao, Bing Sun, Haowei Zhang, Lifeng Liu, Xiaoyan Liu, Ruqi Han, Jinfeng Kang, and Bin Yu. "Unified Physical Model of Bipolar Oxide-Based Resistive Switching Memory." IEEE Electron Device Letters 30, no. 12 (December 2009): 1326–28. http://dx.doi.org/10.1109/led.2009.2032308.

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13

Hur, Ji-Hyun, Kyung Min Kim, Man Chang, Seung Ryul Lee, Dongsoo Lee, Chang Bum Lee, Myoung-Jae Lee, Young-Bae Kim, Chang-Jung Kim, and U.-In Chung. "Modeling for multilevel switching in oxide-based bipolar resistive memory." Nanotechnology 23, no. 22 (May 10, 2012): 225702. http://dx.doi.org/10.1088/0957-4484/23/22/225702.

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14

Zhu, Xiaojian, Wenjing Su, Yiwei Liu, Benlin Hu, Liang Pan, Wei Lu, Jiandi Zhang, and Run-Wei Li. "Observation of Conductance Quantization in Oxide-Based Resistive Switching Memory." Advanced Materials 24, no. 29 (June 18, 2012): 3941–46. http://dx.doi.org/10.1002/adma.201201506.

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15

Nardi, Federico, Simone Balatti, Stefano Larentis, David C. Gilmer, and Daniele Ielmini. "Complementary Switching in Oxide-Based Bipolar Resistive-Switching Random Memory." IEEE Transactions on Electron Devices 60, no. 1 (January 2013): 70–77. http://dx.doi.org/10.1109/ted.2012.2226728.

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16

Shi, Kaixi, Zhongqiang Wang, Haiyang Xu, Zhe Xu, Xiaohan Zhang, Xiaoning Zhao, Weizhen Liu, Guochun Yang, and Yichun Liu. "Complementary Resistive Switching Observed in Graphene Oxide-Based Memory Device." IEEE Electron Device Letters 39, no. 4 (April 2018): 488–91. http://dx.doi.org/10.1109/led.2018.2806377.

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17

Song, Fang, Hong Wang, Jing Sun, Bingjie Dang, Haixia Gao, Mei Yang, Xiaohua Ma, and Yue Hao. "Solution-Processed Physically Transient Resistive Memory Based on Magnesium Oxide." IEEE Electron Device Letters 40, no. 2 (February 2019): 193–95. http://dx.doi.org/10.1109/led.2018.2886380.

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18

Fatheema, Jameela, Tauseef Shahid, Mohammad Ali Mohammad, Amjad Islam, Fouzia Malik, Deji Akinwande, and Syed Rizwan. "A comprehensive investigation of MoO3 based resistive random access memory." RSC Advances 10, no. 33 (2020): 19337–45. http://dx.doi.org/10.1039/d0ra03415k.

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The bipolar resistive switching of molybdenum oxide is deliberated while molybdenum and nickel are used as bottom and top electrodes, respectively, to present a device with resistive random access memory (RRAM) characteristics.

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19

Lu, Yang, Bin Gao, Yihan Fu, Bing Chen, Lifeng Liu, Xiaoyan Liu, and Jinfeng Kang. "A Simplified Model for Resistive Switching of Oxide-Based Resistive Random Access Memory Devices." IEEE Electron Device Letters 33, no. 3 (March 2012): 306–8. http://dx.doi.org/10.1109/led.2011.2178229.

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20

Das, Nipom Sekhar, Koustav Kashyap Gogoi, and Avijit Chowdhury. "Review on graphene oxide-based nanocomposites for resistive switching applications." International Journal of Innovative Research in Physics 2, no. 4 (July 5, 2021): 1–7. http://dx.doi.org/10.15864/ijiip.2401.

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Graphene and graphene oxide (GO) have attracted growing attention in the field of resistive switching memory due to their extraordinary structural, physical and electronic characteristics. Moreover, properties such as excellent charge carrier mobility, high mechanical strength, and outstanding thermal properties make the graphene-based materials suitable for a broad range of other exploitations and many technological applications such as in sensors, energy storage devices, batteries, photocatalysis, electronic devices, supercapacitors etc. The limiting factors such as low storage density and scaling capabilities in silicon-based memories have led the researchers to explore other alternatives for developing the next generation cost effective data storage devices. The article summarises the recent advances in the field of resistive switching memory and tries to focus mainly on the use of graphene-based semiconductor heterostructure devices. The article further includes a brief comparison of the memory performances of graphene/GO nanocomposites with various insulating polymers and semiconducting materials.

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21

Lin, Chun-Chieh, Hsiao-Yu Wu, Nian-Cin Lin, and Chu-Hsuan Lin. "Graphene-oxide-based resistive switching device for flexible nonvolatile memory application." Japanese Journal of Applied Physics 53, no. 5S1 (January 1, 2014): 05FD03. http://dx.doi.org/10.7567/jjap.53.05fd03.

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22

Kim, Insung, Manzar Siddik, Jungho Shin, Kuyyadi P. Biju, Seungjae Jung, and Hyunsang Hwang. "Low temperature solution-processed graphene oxide/Pr0.7Ca0.3MnO3 based resistive-memory device." Applied Physics Letters 99, no. 4 (July 25, 2011): 042101. http://dx.doi.org/10.1063/1.3617426.

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23

Chen, Yu-Li, Mon-Shu Ho, Wen-Jay Lee, Pei-Fang Chung, Babu Balraj, and Chandrasekar Sivakumar. "The mechanism underlying silicon oxide based resistive random-access memory (ReRAM)." Nanotechnology 31, no. 14 (January 16, 2020): 145709. http://dx.doi.org/10.1088/1361-6528/ab62ca.

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24

Ielmini, D., S. Spiga, F. Nardi, C. Cagli, A. Lamperti, E. Cianci, and M. Fanciulli. "Scaling analysis of submicrometer nickel-oxide-based resistive switching memory devices." Journal of Applied Physics 109, no. 3 (February 2011): 034506. http://dx.doi.org/10.1063/1.3544499.

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25

Peng, Shanshan, Fei Zhuge, Xinxin Chen, Xiaojian Zhu, Benlin Hu, Liang Pan, Bin Chen, and Run-Wei Li. "Mechanism for resistive switching in an oxide-based electrochemical metallization memory." Applied Physics Letters 100, no. 7 (February 13, 2012): 072101. http://dx.doi.org/10.1063/1.3683523.

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26

Hsieh, Wei-Kang, Kin-Tak Lam, and Shoou-Jinn Chang. "Characteristics of tantalum-doped silicon oxide-based resistive random access memory." Materials Science in Semiconductor Processing 27 (November 2014): 293–96. http://dx.doi.org/10.1016/j.mssp.2014.06.032.

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27

Sharma, Abhishek A., Ilya V. Karpov, Roza Kotlyar, Jonghan Kwon, Marek Skowronski, and James A. Bain. "Dynamics of electroforming in binary metal oxide-based resistive switching memory." Journal of Applied Physics 118, no. 11 (September 21, 2015): 114903. http://dx.doi.org/10.1063/1.4930051.

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28

Bersuker, G., D. C. Gilmer, D. Veksler, P. Kirsch, L. Vandelli, A. Padovani, L. Larcher, et al. "Metal oxide resistive memory switching mechanism based on conductive filament properties." Journal of Applied Physics 110, no. 12 (December 15, 2011): 124518. http://dx.doi.org/10.1063/1.3671565.

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29

Wu, Hsiao-Yu, Chun-Chieh Lin, and Chu-Hsuan Lin. "Characteristics of graphene-oxide-based flexible and transparent resistive switching memory." Ceramics International 41 (July 2015): S823—S828. http://dx.doi.org/10.1016/j.ceramint.2015.03.129.

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30

Lee, Sunghwan, Shem Seo, Jinho Lim, Dasom Jeon, Batyrbek Alimkhanuly, Arman Kadyrov, and Seunghyun Lee. "Metal oxide resistive memory with a deterministic conduction path." Journal of Materials Chemistry C 8, no. 11 (2020): 3897–903. http://dx.doi.org/10.1039/c9tc07001j.

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In this study, a Ge–Sb–Te ternary chalcogenide layer that functions as a conductive lead is added to a HfO₂-based RRAM layer to improve the memory switching reproducibility and reduce HRS/LRS variations.

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31

Strobel, C., T. Sandner, and S. Strehle. "Resistive Switching Memory based on Silver-doped Chitosan Thin Films." MRS Advances 3, no. 33 (2018): 1943–48. http://dx.doi.org/10.1557/adv.2018.72.

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AbstractMemristors represent an intriguing two-terminal device strategy potentially able to replace conventional memory devices as well as to support neuromorphic computing architectures. Here, we present the resistive switching behaviour of the sustainable and low-cost biopolymer chitosan, which can be extracted from natural chitin present for instance in crab exoskeletons. The biopolymer films were doped with Ag ions in varying concentrations and sandwiched between a bottom electrode such as fluorinated-tin-oxide and a silver top electrode. Silver-doped devices showed an overall promising resistive switching behaviour for doping concentrations between 0.5 to 1 wt% AgNO3. As bottom electrode fluorinated-tin-oxide, nickel, silver and titanium were studied and multiple write and erase cycles were recorded. However, the overall reproducibility and stability are still insufficient to support broader applicability.

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32

Yi, Mingdong, Yong Cao, Haifeng Ling, Zhuzhu Du, Laiyuan Wang, Tao Yang, Quli Fan, Linghai Xie, and Wei Huang. "Temperature dependence of resistive switching behaviors in resistive random access memory based on graphene oxide film." Nanotechnology 25, no. 18 (April 16, 2014): 185202. http://dx.doi.org/10.1088/0957-4484/25/18/185202.

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33

Wu, Pei-Yu, Hao-Xuan Zheng, Chih-Cheng Shih, Ting-Chang Chang, Wei-Jang Chen, Chih-Cheng Yang, Wen-Chung Chen, et al. "Improvement of Resistive Switching Characteristics in Zinc Oxide-Based Resistive Random Access Memory by Ammoniation Annealing." IEEE Electron Device Letters 41, no. 3 (March 2020): 357–60. http://dx.doi.org/10.1109/led.2020.2968629.

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34

Park, Kyuhyun, and Jang-Sik Lee. "Reliable resistive switching memory based on oxygen-vacancy-controlled bilayer structures." RSC Advances 6, no. 26 (2016): 21736–41. http://dx.doi.org/10.1039/c6ra00798h.

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35

Holt, Joshua S., Karsten Beckmann, Zahiruddin Alamgir, Jean Yang-Scharlotta, and Nathaniel C. Cady. "Effect of Displacement Damage on Tantalum Oxide Resistive Memory." MRS Advances 2, no. 52 (2017): 3011–17. http://dx.doi.org/10.1557/adv.2017.422.

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ABSTRACTThe radiation environment of space poses a challenge for electronic systems, in particular flash memory, which contains multiple radiation-sensitive parts. Resistive memory (RRAM) devices have the potential to replace flash memory, functioning as an inherently radiation resistant memory device. Several studies indicate significant radiation resistance in RRAM devices to a broad range of radiation types and doses. In this study, we focus on the effect of displacement damage on tantalum oxide-based RRAM devices, as this form of damage is likely a worst-case scenario. An Ar+ (170 keV) ion beam was used to minimize any contribution from ionization damage, maximizing the effect of displacement damage. Fluence levels were chosen to generate enough oxygen vacancies such that devices in the high resistance state (HRS) would likely switch to the low resistance state (LRS). More than half of devices tested at the highest fluence level (1.43E13 ions/cm2) switched from HRS to LRS. The devices were then switched for 50 set/reset cycles, after which the radiation-induced resistance shift disappeared. These results suggest that device switching may mitigate radiation damage by accelerating oxygen vacancy-interstitial recombination.

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36

Jesuraj, P. Justin, R. Parameshwari, and K. Jeganathan. "Improved performance of graphene oxide based resistive memory devices through hydrogen plasma." Materials Letters 232 (December 2018): 62–65. http://dx.doi.org/10.1016/j.matlet.2018.08.073.

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37

Kim, Sungkyu, Jong Chan Kim, and Hu Young Jeong. "Direct Observation of Oxygen Movement in Graphene Oxide-Based Resistive Switching Memory." Microscopy and Microanalysis 23, S1 (July 2017): 1500–1501. http://dx.doi.org/10.1017/s1431927617008169.

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38

Stoliar, P., P. Levy, M. J. Sanchez, A. G. Leyva, C. A. Albornoz, F. Gomez-Marlasca, A. Zanini, C. Toro Salazar, N. Ghenzi, and M. J. Rozenberg. "Nonvolatile Multilevel Resistive Switching Memory Cell: A Transition Metal Oxide-Based Circuit." IEEE Transactions on Circuits and Systems II: Express Briefs 61, no. 1 (January 2014): 21–25. http://dx.doi.org/10.1109/tcsii.2013.2290921.

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39

Tsuruoka, T., K. Terabe, T. Hasegawa, and M. Aono. "Forming and switching mechanisms of a cation-migration-based oxide resistive memory." Nanotechnology 21, no. 42 (September 24, 2010): 425205. http://dx.doi.org/10.1088/0957-4484/21/42/425205.

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40

Panda, Debashis, and Paritosh Piyush Sahu. "Thermal assisted reset modelling in nickel oxide based unipolar resistive switching memory." Journal of Applied Physics 121, no. 20 (May 28, 2017): 204504. http://dx.doi.org/10.1063/1.4984200.

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41

Ambrogio, Stefano, Valerio Milo, ZhongQiang Wang, Simone Balatti, and Daniele Ielmini. "Analytical Modeling of Current Overshoot in Oxide-Based Resistive Switching Memory (RRAM)." IEEE Electron Device Letters 37, no. 10 (October 2016): 1268–71. http://dx.doi.org/10.1109/led.2016.2600574.

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42

Choi, Shinhyun, Yuchao Yang, and Wei Lu. "Random telegraph noise and resistance switching analysis of oxide based resistive memory." Nanoscale 6, no. 1 (2014): 400–404. http://dx.doi.org/10.1039/c3nr05016e.

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43

Shang, Jie, Wuhong Xue, Zhenghui Ji, Gang Liu, Xuhong Niu, Xiaohui Yi, Liang Pan, Qingfeng Zhan, Xiao-Hong Xu, and Run-Wei Li. "Highly flexible resistive switching memory based on amorphous-nanocrystalline hafnium oxide films." Nanoscale 9, no. 21 (2017): 7037–46. http://dx.doi.org/10.1039/c6nr08687j.

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44

Gao, Bin, Haowei Zhang, Bing Chen, Lifeng Liu, Xiaoyan Liu, Ruqi Han, Jinfeng Kang, et al. "Modeling of Retention Failure Behavior in Bipolar Oxide-Based Resistive Switching Memory." IEEE Electron Device Letters 32, no. 3 (March 2011): 276–78. http://dx.doi.org/10.1109/led.2010.2102002.

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45

Petzold, Stefan, S. U. Sharath, Jonas Lemke, Erwin Hildebrandt, Christina Trautmann, and Lambert Alff. "Heavy Ion Radiation Effects on Hafnium Oxide-Based Resistive Random Access Memory." IEEE Transactions on Nuclear Science 66, no. 7 (July 2019): 1715–18. http://dx.doi.org/10.1109/tns.2019.2908637.

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46

Shang, Jie, Gang Liu, Huali Yang, Xiaojian Zhu, Xinxin Chen, Hongwei Tan, Benlin Hu, Liang Pan, Wuhong Xue, and Run-Wei Li. "Thermally Stable Transparent Resistive Random Access Memory based on All-Oxide Heterostructures." Advanced Functional Materials 24, no. 15 (November 27, 2013): 2171–79. http://dx.doi.org/10.1002/adfm.201303274.

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47

Oh, Se-I., Janardhanan R. Rani, Sung-Min Hong, and Jae-Hyung Jang. "Self-rectifying bipolar resistive switching memory based on an iron oxide and graphene oxide hybrid." Nanoscale 9, no. 40 (2017): 15314–22. http://dx.doi.org/10.1039/c7nr01840a.

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48

Khan, Muhammad Umair, Gul Hassan, and Jinho Bae. "Highly bendable asymmetric resistive switching memory based on zinc oxide and magnetic iron oxide heterojunction." Journal of Materials Science: Materials in Electronics 31, no. 2 (November 27, 2019): 1105–15. http://dx.doi.org/10.1007/s10854-019-02622-0.

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49

Ryoo, Kyung-Chang, Jeong-Hoon Oh, Sunghun Jung, Hongsik Jeong, and Byung-Gook Park. "Areal and Structural Effects on Oxide-Based Resistive Random Access Memory Cell for Improving Resistive Switching Characteristics." Japanese Journal of Applied Physics 51 (April 20, 2012): 04DD14. http://dx.doi.org/10.1143/jjap.51.04dd14.

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50

Zhu, Xiaojian, Wenjing Su, Yiwei Liu, Benlin Hu, Liang Pan, Wei Lu, Jiandi Zhang, and Run-Wei Li. "Resistive Switching Memories: Observation of Conductance Quantization in Oxide-Based Resistive Switching Memory (Adv. Mater. 29/2012)." Advanced Materials 24, no. 29 (July 24, 2012): 3898. http://dx.doi.org/10.1002/adma.201290176.

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