Relevant bibliographies by topics / P-i-n-structure

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers

Academic literature on the topic 'P-i-n-structure'

Author: Grafiati
Published: 5 June 2025
Last updated: 1 August 2025

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the lists of relevant articles, books, theses, conference reports, and other scholarly sources on the topic 'P-i-n-structure.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Journal articles on the topic "P-i-n-structure"

1

Yan, H., and H. X. Jiang. "Band structure of compensated n-i-p-i superlattices." Physical Review B 37, no. 11 (1988): 6425–28. http://dx.doi.org/10.1103/physrevb.37.6425.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Ventra, M. Di, G. Grosso, G. Pastori Parravicini, and C. Piermarocchi. "Electronic structure of n - i - p - i Si superlattices." Journal of Physics: Condensed Matter 9, no. 50 (1997): L657—L661. http://dx.doi.org/10.1088/0953-8984/9/50/002.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

Lukin, K. A., H. A. Cerdeira, and A. A. Colavita. "Current oscillations in avalanche particle detectors with p-n-i-p-n-structure." IEEE Transactions on Electron Devices 43, no. 3 (1996): 473–78. http://dx.doi.org/10.1109/16.485663.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Chen, Yung-Feng, Wei-Cheng Chen, Ricky W. Chuang, Yan-Kuin Su, and Huo-Lieh Tsai. "GaInNAs p–i–n Photodetectors with Multiquantum Wells Structure." Japanese Journal of Applied Physics 47, no. 4 (2008): 2982–86. http://dx.doi.org/10.1143/jjap.47.2982.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

Parnes, Michael, and Orest Vendik. "p-i-n diode phase shifter in waveguide structure." Microwave and Optical Technology Letters 57, no. 7 (2015): 1666–71. http://dx.doi.org/10.1002/mop.29157.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

Dura, Laura, Anke Spannenberg та Torsten Beweries. "Crystal structure of tricarbonyl(N-diphenylphosphanyl-N,N′-diisopropyl-P-phenylphosphonous diamide-κ2P,P′)cobalt(I) tetracarbonylcobaltate(−I) toluene 0.25-solvate". Acta Crystallographica Section E Structure Reports Online 70, № 12 (2014): 533–35. http://dx.doi.org/10.1107/s1600536814024908.

Full text
Abstract:
The asymmetric unit of the title compound, [Co(C24H30N2P2)(CO)3][Co(CO)4]·0.25C7H8, consists of two crystallographically independent cations with similar conformations, two anions, and one-half of a toluene molecule disordered about an inversion centre. In the cations, a Co/P/N/P four-membered slightly bent metallacycle is the key structural element. The pendant NH group is not coordinated to the CoIatom, which displays a distorted trigonal–bipyramidal coordination geometry. Weak interionic hydrogen bonds are observed between the NH groups and a carbonyl group of the tetrahedral [Co(CO)4]−anio
APA, Harvard, Vancouver, ISO, and other styles
7

Keil, Ulrich D., Stefan Malzer, Klaus Schmidt, Gottfried H. Döhler, and Jeff N. Miller. "Photoreflectance spectra of a GaAs/AlGaAs type I hetero-n-i-p-i structure." Superlattices and Microstructures 11, no. 1 (1992): 41–46. http://dx.doi.org/10.1016/0749-6036(92)90359-d.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

Martynenko, S. O., and A. I. Tereshchenko. "Dependence of Photoreceiver Parameters on p-i-n Diode Structure." Telecommunications and Radio Engineering 52, no. 11 (1998): 51–56. http://dx.doi.org/10.1615/telecomradeng.v52.i11.110.

Full text
APA, Harvard, Vancouver, ISO, and other styles
9

Xu, Yao, Wei Chen, Wenjun Zhang, Jingchao Xu, and Xianwei Zeng. "Inverted “p-i-n” structure perovskite solar cells." SCIENTIA SINICA Chimica 46, no. 4 (2016): 342–56. http://dx.doi.org/10.1360/n032016-00024.

Full text
APA, Harvard, Vancouver, ISO, and other styles
10

Yang, F., K. Hinzer, C. Ni Allen, et al. "Quantum dot p-i-n structure in an electric field." Superlattices and Microstructures 25, no. 1-2 (1999): 419–24. http://dx.doi.org/10.1006/spmi.1998.0669.

Full text
APA, Harvard, Vancouver, ISO, and other styles
More sources

Dissertations / Theses on the topic "P-i-n-structure"

1

Gueunier, Marie-Estelle. "Alliages silicium-germanium polymorphes en couches minces pour applications photovoltai͏̈ques." Paris 11, 2003. http://www.theses.fr/2003PA112144.

Full text
Abstract:
Les alliages silicium-germanium amorphes hydrogénés (a-SiGe:H) sont de bons candidats pour réaliser des structures photovoltai͏̈ques multispectrales puisqu'il est possible de diminuer le gap optique de l'alliage en augmentant la teneur en germanium. Néanmoins, ajouter du germanium dans la matrice de silicium conduit généralement à une détérioration des propriétés électroniques du matériau. En revanche, de nombreuses expériences avaient mis en évidence les très bonnes propriétés électroniques d'un matériau nouveau, le silicium polymorphe hydrogéné (pm-Si :H), déposé par PECVD dans des condition
APA, Harvard, Vancouver, ISO, and other styles
2

AMOKRANE, RACHID. "Etue du transport de charges dans une structure n-i-p en silicium amorphe hydrogene." Paris 7, 1993. http://www.theses.fr/1993PA077004.

Full text
Abstract:
Cet ouvrage traite du transport de charges dans une diode n-i-p en silicium amorphe hydrogene (a-si:h). Sous polarisation inverse, nous analysons la relaxation des porteurs de charges a partir de l'etude de photocourants transitoires a l'extinction. Cette etude concerne les cibles photoconductrices en a-si:h des tubes vidicon, qui convertissent une image optique en un signal electrique. La relaxation des porteurs s'y traduit en terme de remanence, celle-ci represente le souvenir que conserve le dispositif d'une image anterieure. Nous avons developpe une technique de caracterisation permettant
APA, Harvard, Vancouver, ISO, and other styles
3

Su, Tong. "MEASUREMENT OF F2n /F2p FROM DEEP INELASTIC ELECTRON SCATTERING OFF A = 3 MIRROR NUCLEI AT JEFFERSON LAB." Kent State University / OhioLINK, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=kent1587680491082341.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Shen, Chi-Ling, and 沈志領. "Electrical characteristics of GeSn p-i-n structure." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/k9pe5r.

Full text
Abstract:
碩士<br>國立臺灣大學<br>電子工程學研究所<br>105<br>In recent years, GeSn-based p-i-n diodes have attracted great research attention on group IV opto-electronics such as photodetectors and emitters operated at near infrared wavelengths. Lots of efforts have been done to obtain the photo-electronic properties such as light absorption or emission. However, to further understand the electrical characteristics is needed. For optical receivers the critical photodiode parameters are dark current, responsivity, and bandwidth. In this paper, we will focus on dark current which may increase the power consumption and de
APA, Harvard, Vancouver, ISO, and other styles
5

Yen, Chi-Huang, and 顏祺晃. "The Research of Supperlassice Structure AlGaN p-i-n Photodtetctor." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/524mnh.

Full text
Abstract:
碩士<br>國立臺北科技大學<br>光電工程系所<br>93<br>We will demonstrate report on the fabrication and characterization of visible-blind AlGaN p-i-n photodiode with an Al0.1Ga0.9N/GaN superlattice structure. The sample was grown by metal organic vapor-phase deposition on c-plane (0 0 0 1) sapphire substrate and 15 pairs of Al0.1Ga0.9N/GaN superlattice structure can echance the difference between ionization coefficient of electrons and holes further improves the performance. Form experiment, we could achieve a lower dark current and a larger photocurrent to dark current contrast ratio which is higher than six ord
APA, Harvard, Vancouver, ISO, and other styles
6

Lu, Fu-peng, and 盧富鵬. "Fabrication and Characterization of p-i-n Nanorods Structure Solar Cells." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/51765751450745066635.

Full text
Abstract:
碩士<br>國立中山大學<br>物理學系研究所<br>104<br>The p-i-n nanorods structure was grown on silicon (111) substrates by plasma-assisted molecular beam epitaxy. The morphology result was obtained by scanning electron microscopy including the height and the diameter. The indium content was estimated by high-resolution x-ray diffraction. Transmission electron microscopy was used to confirm that there are no treading dislocations in the nanorods. Finally, p-i-n nanorods structures were fabricated by photolithography. The device was completed with transparent conductive layer and positive and negative contacts thr
APA, Harvard, Vancouver, ISO, and other styles
7

Yeh, Chiao-Wen, and 葉巧雯. "Electroluminescent Properties of Organic Light-Emitting Diodes with P-I-N Structure." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/11639874603790967105.

Full text
Abstract:
碩士<br>輔仁大學<br>化學系<br>96<br>In this thesis, we study the electroluminescent properties of organic light-emitting diodes(OLED) with P-I-N Structure. The structure of the devices are ITO/TPD/Alq3/BCP/LiF/Al. The high conductive p- and n-doped layers enhance the exciton recombination, brightness,and reduce the turn-on voltage. In the meantime, TPD and BCP are deposited as blocking and transport layer. We use cationic dyes like rhodamin 6G, pyronin B ,and rhodamine B as n-doped material. In the other hand, n-doped ETL of the device is obtained by coevaporation of BCP with pyronin B or rhodamine B.
APA, Harvard, Vancouver, ISO, and other styles
8

Tsai, Jin-shian, and 蔡金憲. "High Efficiency White Organic Light Emitting Diodes with a p-i-n Structure." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/59373459301833707312.

Full text
Abstract:
碩士<br>義守大學<br>電子工程學系碩士班<br>96<br>In this study, the Li-doped Alq3 (50%, 5 nm) as a doped electron transporting layer (n-doped ETL) and the MoO3-doped 2-TNATA as a doped hole injection layer (p-doped HIL) were utilized to forme a p-i-n white organic light emitting diode (WOLED).Systematic analyses of MoO3-doped 2-TNATA thin film have been done to study the optoelectronic performance of p-i-n WOLED devices’ performance. Fristly, the WOLED with various dopeing ratio of MoO3 in 80 nm thickness p-doped HIL of 2-TNATA have been fabricated. When 10 wt% MoO3 is doped in 2-TNATA film, the luminance
APA, Harvard, Vancouver, ISO, and other styles
9

Yeh, Pu-Cheng, and 葉圃成. "Study toward High-Efficiency p-i-n White Organic Light-Emitting Diodes with Tandem Structure." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/73722450565875962722.

Full text
Abstract:
碩士<br>國立交通大學<br>顯示科技研究所<br>95<br>In addition to the introduction of phosphorescent dopants, which is well-known for enhancing efficiency, both the architectures of p-i-n and tandem Organic Light Emitting Diodes (OLEDs) provide interesting strategies to increase the brightness of displays as well. In this thesis, we integrate both the structural features of p-i-n and the tandem device into one White Organic Light Emitting Diodes (WOLEDs) and demonstrate for the first time the apparent benefit in exploiting these two technologies. In the architecture of tandem OLEDs, an effective interconnecting
APA, Harvard, Vancouver, ISO, and other styles
10

Han, Wu Po, and 吳柏翰. "Study on Coaxial-structure Amorphous Silicon p-i-n Solar Cell based on Pillar Arrays of Silicon." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/03046683389393038867.

Full text
Abstract:
碩士<br>聖約翰科技大學<br>電子工程系碩士班<br>102<br>Silicon naowires is a important material in nanoelectronics. Application, scientist believe that the silicon nanowire will more popular than carbon nanotube. Further, it has been focused on electronic application or quantum computing. In this study, we used Electroless Metal Deposition (EMD) method to etched N-type wafer, 2-step etching been applied in this issue. Firstly, cleaned wafer by standard RCA clean after that cut the wafer to 1 × 1 mm size, allocated etching solution HF:AgNO3 (5M:0.02M), then putted wafer to Teflon container for first step etching,
APA, Harvard, Vancouver, ISO, and other styles
More sources

Books on the topic "P-i-n-structure"

1

Bensaude-Vincent, Bernadette. Les Atomes. Une anthologie historique. Presses Pocket, 1991.

Find full text
APA, Harvard, Vancouver, ISO, and other styles

Book chapters on the topic "P-i-n-structure"

1

Yang, Yang, and Jayesh M. Bharathan. "Polymer—Metal Interfaces and the P-I-N Structure of the Polymer Light-Emitting Diode." In ACS Symposium Series. American Chemical Society, 1999. http://dx.doi.org/10.1021/bk-1999-0735.ch009.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Leleyter, M. "Compared electronic structure of negative ions M p C− n : I. Normal elements in Hückel theory." In Small Particles and Inorganic Clusters. Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-74913-1_85.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

Bodzek, M. "PREPARATION, STRUCTURE AND TRANSPORT PROPERTIES OF ULTRAFILTRATION MEMBRANES MADE OF POLYACRYLONITRILE AND P O L Y V I N Y L CHLORIDE)." In Synthetic Polymeric Membranes, edited by Blahoslav Sedláček and Jaroslav Kahovec. De Gruyter, 1987. http://dx.doi.org/10.1515/9783110867374-019.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Rimas, Juozas, and Juozas Rimas Jr. "The Search for Abilities and Characteristics Which Produce Expression of Quality." In Etudes on the Philosophy of Music. Springer Nature Switzerland, 2024. http://dx.doi.org/10.1007/978-3-031-63965-4_4.

Full text
Abstract:
AbstractA series of sub-chapters summarising the subjective abilities necessary for expression in music: 3.1. A Musical Ear. “Inner hearing” vs. acoustic hearing; perfect pitch. Hearing and understanding (G. Colombero, B. Asaf’ev; C.P.E. Bach, R. Schumann). 3.2. Sound Creation. The method developed by C. Martienssen. “Wunderkind complex”. The author’s recording of the Andante from the Cassation in B flat major (KV 63a) by the 13-year-old W. A. Mozart. Six elements of sound creation: pitch volition (Tonwille); timbre volition (Klangwille) (cf. A. Losev: “the otherness of tone“); line volition (
APA, Harvard, Vancouver, ISO, and other styles
5

Fallat, Shaun M., and Charles R. Johnson. "Recognition." In Totally Nonnegative Matrices. Princeton University Press, 2011. http://dx.doi.org/10.23943/princeton/9780691121574.003.0004.

Full text
Abstract:
This chapter discusses the recognition of TN matrices. It touches on one of the many applications for the structure of TN matrices. TN matrices enjoy tremendous structure, as a result of requiring all minors to be nonnegative. This intricate structure makes it easier to determine when a matrix is TP than to check when it is a P-matrix, which formally involves far fewer minors. Vandermonde matrices arise in the problem of determining a polynomial of degree at most n − 1 that interpolates n data points. Suppose that n data points (xᵢ,yᵢ)unconverted formula are given. The goal is to construct a p
APA, Harvard, Vancouver, ISO, and other styles
6

Pereira Jorge Manuel Torres. "The Effect of the Direction of Incident Light on the Frequency Response of p-i-n Photodiodes." In Studies in Applied Electromagnetics and Mechanics. IOS Press, 2008. https://doi.org/10.3233/978-1-58603-895-3-417.

Full text
Abstract:
This paper investigates the effects of the direction of the incident light on the transit time limited frequency response of p-i-n photodiodes. The simulation model starts from dividing the absorption region into any desired number of layers and, for each layer, the continuity equations are solved assuming that the carriers' drift velocities are constant. The frequency response of the multilayer structure is calculated from the response of each layer using matrix algebra. The bandwidth is seen to increase when the light is incident on the p side. In this case the use of constant saturation vel
APA, Harvard, Vancouver, ISO, and other styles
7

Sutton, Adrian P. "s-p bonding-a case study in silicon." In Electronic Structure of Materials. Oxford University PressOxford, 1990. http://dx.doi.org/10.1093/oso/9780198517559.003.0006.

Full text
Abstract:
Abstract In this chapter we shall enlarge the basis set that we assume for each atom to include p electrons. It is necessary to do this in order to understand the cohesion of many elements of the periodic table and their compounds. In Chapter 9 we shall consider bonding caused by interactions between d states. By surveying the elements of the periodic table we see that s-p bonding occurs among the valence electrons of the elements of groups I-VII. The elements of the first three groups have closed packed metallic structures, i.e. f.c.c., h.c.p., and b.c.c. As we go down the elements of group I
APA, Harvard, Vancouver, ISO, and other styles
8

Holmes-Siedle, Andrew, and Len Adams. "Bipolar transistors and integrated circuits." In Handbook of Radiation Effects. Oxford University PressOxford, 2002. http://dx.doi.org/10.1093/oso/9780198507338.003.0005.

Full text
Abstract:
Abstract Bipolar transistors consist of a pair of closely spaced p-n junctions in a single semiconductor structure. The order can be ‘n-p-n’ or ‘p-n-p’. These devices, in both discrete and integrated form, are essential components in many electronic systems, especially in applications (such as in amplifiers), which require a high current gain or considerable ‘drive’ current. Radiation produces degradation of gain and an increase in leakage. The degradation of gain is well understood and derives from degradation of the transport of minority carriers across the base region. We will discuss the e
APA, Harvard, Vancouver, ISO, and other styles
9

Trimble, R. B., K. Morcmcn, and A. Hcrscovics. "Mannosidases of the Golgi complex." In Secretory Pathway. Oxford University PressOxford, 1994. http://dx.doi.org/10.1093/oso/9780198599425.003.0115.

Full text
Abstract:
Abstract The trimming phase of the N-glycan processing pathway is initiated by a-glucosidases I and II and a collection of processing mannosidases in the ER and Golgi complex, which remove the four a1,2-mannose residues to yield Man5GlcNAc2. Following the action of GlcNAc transferase I, which initiates branching of complex oligosaccharides, Golgi a-mannosidase II removes one a1,3- and one a1,6- linked mannose residue to yield GlcNAcMan3GlcNAc2. This structure serves as the substrate for further elaboration of the oligosaccharide chain by the addition of fucose, galactose, and sialic acid resid
APA, Harvard, Vancouver, ISO, and other styles
10

Pollock, John L. "Computational Principles." In Nomic Probability and the Foundations of Induction. Oxford University Press, 1990. http://dx.doi.org/10.1093/oso/9780195060133.003.0006.

Full text
Abstract:
Much of the usefulness of probability derives from its rich logical and mathematical structure. That structure comprises the probability calculus. The classical probability calculus is familiar and well understood, but it will turn out that the calculus of nomic probabilities differs from the classical probability calculus in some interesting and important respects. The purpose of this chapter is to develop the calculus of nomic probabilities, and at the same time to investigate the logical and mathematical structure of nomic generalizations. The mathematical theory of nomic probability is for
APA, Harvard, Vancouver, ISO, and other styles

Conference papers on the topic "P-i-n-structure"

1

Mariam, Tamanna, Zahrah S. Almutawah, Manoj K. Jamarkattel, et al. "Using Electroluminescence Imaging of Inverted (p-i-n) Structure Perovskite Solar Cell to Explore Device Degradation." In 2024 IEEE 52nd Photovoltaic Specialist Conference (PVSC). IEEE, 2024. http://dx.doi.org/10.1109/pvsc57443.2024.10748923.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Leitner, Patrick, Philipp Preinstorfer, David Jolly, Victoria Jolly, and John Orr. "Assessment of the load-bearing capacity of textile-reinforced shell structures created with a free form-finding approach." In IABSE Symposium, Tokyo 2025: Environmentally Friendly Technologies and Structures: Focusing on Sustainable Approaches. International Association for Bridge and Structural Engineering (IABSE), 2025. https://doi.org/10.2749/tokyo.2025.1359.

Full text
Abstract:
&lt;p&gt;Shell structures are primarily subjected to compressive stresses if their geometry is adjusted to the applied loading. Still, the geometry in a real environment usually deviates from an optimal form for load-bearing due to tolerances and architectural demands, thus causing additional bending moments (&lt;i&gt;m&lt;/i&gt;) and normal forces (&lt;i&gt;n&lt;/i&gt;). The use of textile-reinforced concrete (TRC) makes it possible to reduce thickness and thus the dead weight of a shell, though it also increases the sensitivity for deviations from perfect conditions. Additionally, textile re
APA, Harvard, Vancouver, ISO, and other styles
3

Kwende, R., A. Pillai, and S. Mil'shtein. "Hetero-structure p-i-n-i-p solar cell with virtual collector." In 7TH INTERNATIONAL CONFERENCE ON LOW DIMENSIONAL STRUCTURES AND DEVICES: (LDSD 2011). AIP Publishing LLC, 2014. http://dx.doi.org/10.1063/1.4878305.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Kost, A., M. Kawase, E. Garmire, A. Danner, H. C. Lee, and P. D. Dapkus. "Carrier Lifetimes In A Hetero N-I-P-I Structure." In 1988 Semiconductor Symposium, edited by Federico Capasso, Gottfried H. Doehler, and Joel N. Schulman. SPIE, 1988. http://dx.doi.org/10.1117/12.947302.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

Jung, Le-Tien, Indrajit Manna, Swapan Bhattacharya, and Sanjay K. Banerjee. "New hot-carrier-resistant P-I-N MOSFET structure." In Microelectronic Manufacturing, edited by Fusen E. Chen and Shyam P. Murarka. SPIE, 1994. http://dx.doi.org/10.1117/12.186061.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

Kundu, A., M. R. Kanjilal, A. Das, J. Kundu, and M. Mukherjee. "Cubic structure SiC p-i-n diode as RF switch." In Third International Conference on Computational Intelligence and Information Technology (CIIT 2013). Institution of Engineering and Technology, 2013. http://dx.doi.org/10.1049/cp.2013.2632.

Full text
APA, Harvard, Vancouver, ISO, and other styles
7

Mil'shtein, S., A. Pillai, D. P. Nair, and A. Karumuri. "Hetero-structure p-i-n solar cell with high efficiency." In 7TH INTERNATIONAL CONFERENCE ON LOW DIMENSIONAL STRUCTURES AND DEVICES: (LDSD 2011). AIP Publishing LLC, 2014. http://dx.doi.org/10.1063/1.4878304.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

Chen, Yung-Feng, Wei-Cheng Chen, Ricky W. Chuang, Yan-Kuin Su, and Huo-Lieh Tsai. "GaInNAs/GaAs p-i-n Photodetector with Multiquantum Well Structure." In 2007 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2007. http://dx.doi.org/10.7567/ssdm.2007.p-7-16.

Full text
APA, Harvard, Vancouver, ISO, and other styles
9

Kikuchi, N., H. Sanjoh, Y. Shibata, et al. "80-Gbit/s InP DQPSK modulator with an n-p-i-n structure." In 33rd European Conference and Exhibition on Optical Communication - ECOC 2007. IEE, 2007. http://dx.doi.org/10.1049/ic:20070367.

Full text
APA, Harvard, Vancouver, ISO, and other styles
10

Tatsunokuchi, Suguru, I. Muneta, T. Hoshii, et al. "Photovoltaic properties of lateral ultra-thin Si p-i-n structure." In 2018 China Semiconductor Technology International Conference (CSTIC). IEEE, 2018. http://dx.doi.org/10.1109/cstic.2018.8369314.

Full text
APA, Harvard, Vancouver, ISO, and other styles
You might also be interested in the extended bibliographies on the topic 'P-i-n-structure' for particular source types:
Journal articles Dissertations / Theses
We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!

To the bibliography