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Dissertations / Theses on the topic 'P-i-n-structure'

Author: Grafiati
Published: 5 June 2025
Last updated: 15 July 2025

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1

Gueunier, Marie-Estelle. "Alliages silicium-germanium polymorphes en couches minces pour applications photovoltai͏̈ques." Paris 11, 2003. http://www.theses.fr/2003PA112144.

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Les alliages silicium-germanium amorphes hydrogénés (a-SiGe:H) sont de bons candidats pour réaliser des structures photovoltai͏̈ques multispectrales puisqu'il est possible de diminuer le gap optique de l'alliage en augmentant la teneur en germanium. Néanmoins, ajouter du germanium dans la matrice de silicium conduit généralement à une détérioration des propriétés électroniques du matériau. En revanche, de nombreuses expériences avaient mis en évidence les très bonnes propriétés électroniques d'un matériau nouveau, le silicium polymorphe hydrogéné (pm-Si :H), déposé par PECVD dans des condition
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2

AMOKRANE, RACHID. "Etue du transport de charges dans une structure n-i-p en silicium amorphe hydrogene." Paris 7, 1993. http://www.theses.fr/1993PA077004.

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Cet ouvrage traite du transport de charges dans une diode n-i-p en silicium amorphe hydrogene (a-si:h). Sous polarisation inverse, nous analysons la relaxation des porteurs de charges a partir de l'etude de photocourants transitoires a l'extinction. Cette etude concerne les cibles photoconductrices en a-si:h des tubes vidicon, qui convertissent une image optique en un signal electrique. La relaxation des porteurs s'y traduit en terme de remanence, celle-ci represente le souvenir que conserve le dispositif d'une image anterieure. Nous avons developpe une technique de caracterisation permettant
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3

Su, Tong. "MEASUREMENT OF F2n /F2p FROM DEEP INELASTIC ELECTRON SCATTERING OFF A = 3 MIRROR NUCLEI AT JEFFERSON LAB." Kent State University / OhioLINK, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=kent1587680491082341.

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4

Shen, Chi-Ling, and 沈志領. "Electrical characteristics of GeSn p-i-n structure." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/k9pe5r.

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碩士<br>國立臺灣大學<br>電子工程學研究所<br>105<br>In recent years, GeSn-based p-i-n diodes have attracted great research attention on group IV opto-electronics such as photodetectors and emitters operated at near infrared wavelengths. Lots of efforts have been done to obtain the photo-electronic properties such as light absorption or emission. However, to further understand the electrical characteristics is needed. For optical receivers the critical photodiode parameters are dark current, responsivity, and bandwidth. In this paper, we will focus on dark current which may increase the power consumption and de
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5

Yen, Chi-Huang, and 顏祺晃. "The Research of Supperlassice Structure AlGaN p-i-n Photodtetctor." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/524mnh.

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碩士<br>國立臺北科技大學<br>光電工程系所<br>93<br>We will demonstrate report on the fabrication and characterization of visible-blind AlGaN p-i-n photodiode with an Al0.1Ga0.9N/GaN superlattice structure. The sample was grown by metal organic vapor-phase deposition on c-plane (0 0 0 1) sapphire substrate and 15 pairs of Al0.1Ga0.9N/GaN superlattice structure can echance the difference between ionization coefficient of electrons and holes further improves the performance. Form experiment, we could achieve a lower dark current and a larger photocurrent to dark current contrast ratio which is higher than six ord
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6

Lu, Fu-peng, and 盧富鵬. "Fabrication and Characterization of p-i-n Nanorods Structure Solar Cells." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/51765751450745066635.

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碩士<br>國立中山大學<br>物理學系研究所<br>104<br>The p-i-n nanorods structure was grown on silicon (111) substrates by plasma-assisted molecular beam epitaxy. The morphology result was obtained by scanning electron microscopy including the height and the diameter. The indium content was estimated by high-resolution x-ray diffraction. Transmission electron microscopy was used to confirm that there are no treading dislocations in the nanorods. Finally, p-i-n nanorods structures were fabricated by photolithography. The device was completed with transparent conductive layer and positive and negative contacts thr
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7

Yeh, Chiao-Wen, and 葉巧雯. "Electroluminescent Properties of Organic Light-Emitting Diodes with P-I-N Structure." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/11639874603790967105.

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碩士<br>輔仁大學<br>化學系<br>96<br>In this thesis, we study the electroluminescent properties of organic light-emitting diodes(OLED) with P-I-N Structure. The structure of the devices are ITO/TPD/Alq3/BCP/LiF/Al. The high conductive p- and n-doped layers enhance the exciton recombination, brightness,and reduce the turn-on voltage. In the meantime, TPD and BCP are deposited as blocking and transport layer. We use cationic dyes like rhodamin 6G, pyronin B ,and rhodamine B as n-doped material. In the other hand, n-doped ETL of the device is obtained by coevaporation of BCP with pyronin B or rhodamine B.
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8

Tsai, Jin-shian, and 蔡金憲. "High Efficiency White Organic Light Emitting Diodes with a p-i-n Structure." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/59373459301833707312.

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碩士<br>義守大學<br>電子工程學系碩士班<br>96<br>In this study, the Li-doped Alq3 (50%, 5 nm) as a doped electron transporting layer (n-doped ETL) and the MoO3-doped 2-TNATA as a doped hole injection layer (p-doped HIL) were utilized to forme a p-i-n white organic light emitting diode (WOLED).Systematic analyses of MoO3-doped 2-TNATA thin film have been done to study the optoelectronic performance of p-i-n WOLED devices’ performance. Fristly, the WOLED with various dopeing ratio of MoO3 in 80 nm thickness p-doped HIL of 2-TNATA have been fabricated. When 10 wt% MoO3 is doped in 2-TNATA film, the luminance
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9

Yeh, Pu-Cheng, and 葉圃成. "Study toward High-Efficiency p-i-n White Organic Light-Emitting Diodes with Tandem Structure." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/73722450565875962722.

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碩士<br>國立交通大學<br>顯示科技研究所<br>95<br>In addition to the introduction of phosphorescent dopants, which is well-known for enhancing efficiency, both the architectures of p-i-n and tandem Organic Light Emitting Diodes (OLEDs) provide interesting strategies to increase the brightness of displays as well. In this thesis, we integrate both the structural features of p-i-n and the tandem device into one White Organic Light Emitting Diodes (WOLEDs) and demonstrate for the first time the apparent benefit in exploiting these two technologies. In the architecture of tandem OLEDs, an effective interconnecting
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10

Han, Wu Po, and 吳柏翰. "Study on Coaxial-structure Amorphous Silicon p-i-n Solar Cell based on Pillar Arrays of Silicon." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/03046683389393038867.

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碩士<br>聖約翰科技大學<br>電子工程系碩士班<br>102<br>Silicon naowires is a important material in nanoelectronics. Application, scientist believe that the silicon nanowire will more popular than carbon nanotube. Further, it has been focused on electronic application or quantum computing. In this study, we used Electroless Metal Deposition (EMD) method to etched N-type wafer, 2-step etching been applied in this issue. Firstly, cleaned wafer by standard RCA clean after that cut the wafer to 1 × 1 mm size, allocated etching solution HF:AgNO3 (5M:0.02M), then putted wafer to Teflon container for first step etching,
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11

Yen, Shih-Hsun, and 顏士勛. "Numerical Investigation on the Structure Design and Photovoltaic Characteristics of InGaN p-i-n Tandem Solar Cell." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/55720276165122536772.

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碩士<br>國立彰化師範大學<br>光電科技研究所<br>101<br>At present, the employment of InGaN-based material system in the application of solar cell has been extensively explored. The ultimate objective is to achieve the InGaN-based multi-junction tandem solar cell, utiltze it as the wide bandgap top cell of the mechanically-stacked tandem solar cell or apply it to other high-efficiency devices. Owing to the applications, it is believed that the development of InGaN-based solar cell possesses high potential. In this thesis, the effects of internal polarization on the photovoltaic characteristics of Ga-face GaN/InGa
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12

Lan, Ding-Hung, and 藍鼎閎. "Ultrasonic Spray Deposition Technique with Two-Step Method for Planar p-i-n Structure Perovskite Solar Cell Device Application." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/em778e.

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碩士<br>國立中央大學<br>化學工程與材料工程學系<br>106<br>Organic-inorganic perovskites have emerged as one of the most promising materials for next-generation photovoltaics. Two-step coating is a method to prepare the perovskite solar cells, it is good way to control film properties including thickness, uniformity, and morphology for active perovskite light absorber. Herein we combine a simple, high throughput ultrasonic spray coating process which can be compatible with the roll-to-roll fabrication process for the large scale production and two-step spray coating method to fabricate the planar hetero-junction p
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13

Wong, Honng-Zheng, and 翁宏鎮. "The elctrical and deep-level analysis of the low-temperature InGaAs/GaAs superlattice p-i-n structure grown by MBE." Thesis, 1997. http://ndltd.ncl.edu.tw/handle/60203683439036021966.

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碩士<br>國立交通大學<br>電子物理學系<br>85<br>To combine the photo-electro properties of the low temperature(LT) GaAs andthe superlattice structure, we used the molecular beam epitaxy system to growthe LT InGaAs/GaAs superlattice p-i-n structure. For comparison, the samples of the smae struectures were grown at normal temperature. We continued the research of the LT GaAs n-i-n and p-i-n structures to the electrical and deep-level measurements on the LT InGaAs/GaAs superlattice sample. The results we obta
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14

Lin, Kai-Han, and 林楷翰. "Study on Coaxial-structure Amorphous Silicon p-i-n Solar Cell based on Pillar Arrays of Al-doped ZnO Nanowires bundles." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/26452292644692489104.

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碩士<br>聖約翰科技大學<br>電子工程系碩士班<br>102<br>Zinc Oxide hasattracted much attention for a variety of optoelectronic applications due to its excellent physical and chemical properties, i.e., wide-bandgap semiconductor (Eg = 3.37 eV at 300 K) with a large exciton binding energy (60 meV), high thermal stability and excellent chemical stability. ZnO’s research has developed for decades. ZnO nanowire structures have always been fabricated on high temperature procedure. In this study, we use low temperature hydrothermal growth method to fulfill low cost and simple procedure. ZnO nano-structures were fabricat
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15

Lin, Wen-yen, and 林文彥. "Effects of thermal annealing on the structure, morphology, and electrical properties of n-ZnO/i- Al 2 O 3 /p-Si pin diodes." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/684fk5.

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碩士<br>國立中山大學<br>物理學系研究所<br>102<br>This thesis investigates the pin diodes which were fabricated with n-type ZnO thin films on p-type Si by rf-sputtering, using Al 2 O 3 as an insulated buffer layer. A pure Al layer was first deposited on bare Si substrate, which was then annealed in O 2 ambient, all meant to reduce the native SiO 2 into Si and have Al 2 O 3 formed as a crystalline layer for high quality ZnO growth. Different sputtering powers for the ZnO meant to search the best deposition rate. Different growth temperatures for the ZnO meant to improve the crystal structure and quality. D
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16

CHEN, ZHI-YANG, and 陳志洋. "The effect of graded-gap and barrier layer structure on the electroluminescence propevties of a-sic: H P-I-N thin-film light emitting diode." Thesis, 1992. http://ndltd.ncl.edu.tw/handle/77480092752820881157.

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