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Journal articles on the topic 'P-i-n-structure'

Author: Grafiati

Published: 5 June 2025

Last updated: 15 July 2025

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1

Yan, H., and H. X. Jiang. "Band structure of compensated n-i-p-i superlattices." Physical Review B 37, no. 11 (1988): 6425–28. http://dx.doi.org/10.1103/physrevb.37.6425.

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2

Ventra, M. Di, G. Grosso, G. Pastori Parravicini, and C. Piermarocchi. "Electronic structure of n - i - p - i Si superlattices." Journal of Physics: Condensed Matter 9, no. 50 (1997): L657—L661. http://dx.doi.org/10.1088/0953-8984/9/50/002.

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3

Lukin, K. A., H. A. Cerdeira, and A. A. Colavita. "Current oscillations in avalanche particle detectors with p-n-i-p-n-structure." IEEE Transactions on Electron Devices 43, no. 3 (1996): 473–78. http://dx.doi.org/10.1109/16.485663.

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4

Chen, Yung-Feng, Wei-Cheng Chen, Ricky W. Chuang, Yan-Kuin Su, and Huo-Lieh Tsai. "GaInNAs p–i–n Photodetectors with Multiquantum Wells Structure." Japanese Journal of Applied Physics 47, no. 4 (2008): 2982–86. http://dx.doi.org/10.1143/jjap.47.2982.

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5

Parnes, Michael, and Orest Vendik. "p-i-n diode phase shifter in waveguide structure." Microwave and Optical Technology Letters 57, no. 7 (2015): 1666–71. http://dx.doi.org/10.1002/mop.29157.

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6

Dura, Laura, Anke Spannenberg та Torsten Beweries. "Crystal structure of tricarbonyl(N-diphenylphosphanyl-N,N′-diisopropyl-P-phenylphosphonous diamide-κ2P,P′)cobalt(I) tetracarbonylcobaltate(−I) toluene 0.25-solvate". Acta Crystallographica Section E Structure Reports Online 70, № 12 (2014): 533–35. http://dx.doi.org/10.1107/s1600536814024908.

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The asymmetric unit of the title compound, [Co(C24H30N2P2)(CO)3][Co(CO)4]·0.25C7H8, consists of two crystallographically independent cations with similar conformations, two anions, and one-half of a toluene molecule disordered about an inversion centre. In the cations, a Co/P/N/P four-membered slightly bent metallacycle is the key structural element. The pendant NH group is not coordinated to the CoIatom, which displays a distorted trigonal–bipyramidal coordination geometry. Weak interionic hydrogen bonds are observed between the NH groups and a carbonyl group of the tetrahedral [Co(CO)4]−anio

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7

Keil, Ulrich D., Stefan Malzer, Klaus Schmidt, Gottfried H. Döhler, and Jeff N. Miller. "Photoreflectance spectra of a GaAs/AlGaAs type I hetero-n-i-p-i structure." Superlattices and Microstructures 11, no. 1 (1992): 41–46. http://dx.doi.org/10.1016/0749-6036(92)90359-d.

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8

Martynenko, S. O., and A. I. Tereshchenko. "Dependence of Photoreceiver Parameters on p-i-n Diode Structure." Telecommunications and Radio Engineering 52, no. 11 (1998): 51–56. http://dx.doi.org/10.1615/telecomradeng.v52.i11.110.

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9

Xu, Yao, Wei Chen, Wenjun Zhang, Jingchao Xu, and Xianwei Zeng. "Inverted “p-i-n” structure perovskite solar cells." SCIENTIA SINICA Chimica 46, no. 4 (2016): 342–56. http://dx.doi.org/10.1360/n032016-00024.

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10

Yang, F., K. Hinzer, C. Ni Allen, et al. "Quantum dot p-i-n structure in an electric field." Superlattices and Microstructures 25, no. 1-2 (1999): 419–24. http://dx.doi.org/10.1006/spmi.1998.0669.

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11

Yarn, K. F., Y. H. Wang, C. Y. Chang, and C. S. Chang. "Voltage-controlled three terminal GaAs negative differential resistance device using n+-i-p+-i-n+ structure." IEE Proceedings G Circuits, Devices and Systems 137, no. 3 (1990): 219. http://dx.doi.org/10.1049/ip-g-2.1990.0033.

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12

Chowdhury, Md. Iqbal Bahar. "Analytical Model of Cutoff Frequency of GaAs PIN Photodiode." Journal of VLSI Design and Signal Processing 10, no. 2 (2024): 31–40. https://doi.org/10.5281/zenodo.15318634.

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This work has developed an analytical model of the cutoff frequency for a GaAs p-i-n photodiode, which can be employed to investigate the high-frequency response– a key concern for the applications of high-speed optical communications. In doing so, the three transit times for the highly and uniformly doped emitter and base regions and the intrinsic region sandwiched between these regions have been determined, which requires the solutions of governing differential equations for each region. The analytical model considers the effects of the surface and volume recombination on the emitter a

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13

Borzdov, A. V., V. M. Borzdov, D. N. Buinouski, and A. N. Petlitsky. "Monte Carlo Simulation of Photoresponse in Silicon Photodiodes with p-n-Junction and p-i-n-Structure." Devices and Methods of Measurements 16, no. 2 (2025): 140–46. https://doi.org/10.21122/2220-9506-2025-16-2-140-146.

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Numerical modeling of semiconductor photodiodes’ electrical characteristics is an important task at the stage of their development and design. In this regard, it should be noted that one of the most promising methods that can be used for this purpose is the ensemble Monte Carlo method, which allows including, along with the dominant mechanisms of charge carriers’ scattering in the device structure, also the processes of impact ionization, which is very important for adequate modeling of a wide class of silicon photodiodes operating in the reverse bias mode. The aim of the work was to study the

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14

Chevrier, J. B., P. Cambon, R. C. Chittick, and B. Equer. "Use of n-i-p-i-n a-Si:H structure for bistable optically addressed spatial light modulator." Journal of Non-Crystalline Solids 137-138 (January 1991): 1325–28. http://dx.doi.org/10.1016/s0022-3093(05)80368-0.

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15

Manyakhin, F. I., and L. O. Mokretsova. "Modeling the Energy Structure of a GaN p–i–n Junction." Russian Microelectronics 47, no. 8 (2018): 619–23. http://dx.doi.org/10.1134/s1063739718080073.

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16

Dittrich, Th, V. Yu Timoshenko, J. Rappich, and L. Tsybeskov. "Room temperature electroluminescence from a c-Si p-i-n structure." Journal of Applied Physics 90, no. 5 (2001): 2310–13. http://dx.doi.org/10.1063/1.1390310.

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17

Tyagi, Priyanka, Ritu Srivastava, Arunandan Kumar, et al. "Low voltage organic light emitting diode using p–i–n structure." Synthetic Metals 160, no. 9-10 (2010): 1126–29. http://dx.doi.org/10.1016/j.synthmet.2010.02.017.

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18

Ahmad, Estiak, P. K. Kasanaboina, M. R. Karim, et al. "Te incorporation in GaAs1−xSbxnanowires and p-i-n axial structure." Semiconductor Science and Technology 31, no. 12 (2016): 125001. http://dx.doi.org/10.1088/0268-1242/31/12/125001.

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19

Cao, Wei, C. J. Yao, G. F. Jiao, Daming Huang, H. Y. Yu, and Ming-Fu Li. "Improvement in Reliability of Tunneling Field-Effect Transistor With p-n-i-n Structure." IEEE Transactions on Electron Devices 58, no. 7 (2011): 2122–26. http://dx.doi.org/10.1109/ted.2011.2144987.

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20

Schneider, H., C. Schönbein, and G. Bihlmann. "Voltage‐tunable two‐color detection by interband and intersubband transitions in a p‐i‐n‐i‐n structure." Applied Physics Letters 68, no. 13 (1996): 1832–34. http://dx.doi.org/10.1063/1.116028.

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21

Lee, M. L., and J. K. Sheu. "GaN-Based Ultraviolet p-i-n Photodiodes with Buried p-Layer Structure Grown by MOVPE." Journal of The Electrochemical Society 154, no. 3 (2007): H182. http://dx.doi.org/10.1149/1.2426889.

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22

Kim, Moonjung. "InGaAs/InP p-i-n Photodiode with an Extrinsic Pad Isolation Structure." Journal of the Korean Physical Society 51, no. 4 (2007): 1409. http://dx.doi.org/10.3938/jkps.51.1409.

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23

de Cesare, Giampiero, Augusto Nascetti, and Domenico Caputo. "Amorphous Silicon p-i-n Structure Acting as Light and Temperature Sensor." Sensors 15, no. 6 (2015): 12260–72. http://dx.doi.org/10.3390/s150612260.

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24

Traut-Johnstone, Telisha, Stonard Kanyanda, Frederik H. Kriel, et al. "Heteroditopic P,N ligands in gold(I) complexes: Synthesis, structure and cytotoxicity." Journal of Inorganic Biochemistry 145 (April 2015): 108–20. http://dx.doi.org/10.1016/j.jinorgbio.2015.01.014.

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25

Bachechi, F., A. Burini, R. Galassi, B. R. Pietroni, and D. Tesei. "Crystal structure of bis(3,5-dimethylpyrazole)-N,N'-µ-[1-bis(diphenylphosphino) propane]-P,P'-digold(I)] diperchlorate, C37H42N4P2AU2CI2O8." Zeitschrift für Kristallographie - New Crystal Structures 214, no. 4 (1999): 497–98. http://dx.doi.org/10.1515/ncrs-1999-0449.

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26

Chen, Hao, Liang-Xuan Xu, Li-Juan Yan, et al. "Mononuclear Copper(I) complexes based on phenanthroline derivatives P^N^N^P tetradentate ligands: Syntheses, crystal structure, photochemical properties." Dyes and Pigments 173 (February 2020): 108000. http://dx.doi.org/10.1016/j.dyepig.2019.108000.

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27

Pankratov, E. L., and E. A. Bulaeva. "Increasing of Compactness of p-i-n-Diodes by Using Inhomogeneity of a Multilayer Structure." Journal of Computational Intelligence and Electronic Systems 2, no. 2 (2013): 148–55. http://dx.doi.org/10.1166/jcies.2013.1056.

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28

Yu Strekert, O., and N. G. Marsov. "Comparison of organic-inorganic p-i-n and p-n heterostructures as potential solar cell designs for use in difficult weather conditions." IOP Conference Series: Earth and Environmental Science 1045, no. 1 (2022): 012082. http://dx.doi.org/10.1088/1755-1315/1045/1/012082.

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Abstract This paper investigates the possibility of increasing the spectral sensitivity of an organic-inorganic p-i-n-heterostructure solar cell as compared to a p-n-structure solar cell. Both p-i-n and p-n structures are fabricated from gallium arsenide (GaAs) and copper phthalocyanine (CuPc) using the same technology. In fabricating the p-n-structure, CuPc is deposited in a thinner layer and is fully doped with oxygen; in fabricating the p-i-n-structure, CuPc is deposited in a thicker layer and only its upper part is doped. The main properties of both heterostructures are investigated. The s

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29

Ma, Z. Y., G. Y. Xia, X. F. Jiang, et al. "Improved Electroluminescence from nc-Si Film Embedded in p-i-n Structure LED." Advanced Materials Research 340 (September 2011): 177–80. http://dx.doi.org/10.4028/www.scientific.net/amr.340.177.

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Intensive electroluminescence (EL) visible to the naked eyes is observed from p–i–n structure light emitting diodes with nanocrystalline Si (nc-Si) film as the luminescent layer. It is found the luminescence intensity increases by 20 times compared with that of nc-Si film without p-i-n structure and the turn-on voltage is sharply reduced. Combined with I-V and TEM analysis, the improved EL is attributed to the enhancement of carrier injection probability of nc-Si inserted in p-i-n structure.

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30

Kikuchi, Nobuhiro, Yasuo Shibata, Ken Tsuzuki, et al. "80-Gb/s Low-Driving-Voltage InP DQPSK Modulator With an n-p-i-n Structure." IEEE Photonics Technology Letters 21, no. 12 (2009): 787–89. http://dx.doi.org/10.1109/lpt.2009.2018475.

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31

SUMITA, Shigekazu, Yuichi KUBOTA, Osamu HASEGAWA, and Terufumi KAMIJO. "The p-i-n Structure and Additive Elements of Amorphous Silicon Solar Cells." Journal of Society of Materials Engineering for Resources of Japan 8, no. 2 (1995): 93–104. http://dx.doi.org/10.5188/jsmerj.8.2_93.

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32

Telenkov, M. P., and Yu A. Mityagin. "Resonant-tunneling structure of quantum wells in the p-i-n photovoltaic element." Bulletin of the Lebedev Physics Institute 40, no. 12 (2013): 346–53. http://dx.doi.org/10.3103/s106833561312004x.

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33

Mchedlidze, T., T. Arguirov, M. Holla, and M. Kittler. "Electroluminescence from p-i-n structure fabricated using crystalline silicon on glass technology." Journal of Applied Physics 105, no. 9 (2009): 093107. http://dx.doi.org/10.1063/1.3124358.

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34

Ho, Meng-Huan, Teng-Ming Chen, Pu-Cheng Yeh, Shiao-Wen Hwang, and Chin H. Chen. "Highly efficient p-i-n white organic light emitting devices with tandem structure." Applied Physics Letters 91, no. 23 (2007): 233507. http://dx.doi.org/10.1063/1.2822398.

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35

Woo Young Choi, Jae Young Song, Jong Duk Lee, Young June Park, and Byung-Gook Park. "100-nm n-/p-channel I-MOS using a novel self-aligned structure." IEEE Electron Device Letters 26, no. 4 (2005): 261–63. http://dx.doi.org/10.1109/led.2005.844695.

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36

Huang, Yi-Ting, Pinghui S. Yeh, Yen-Hsiang Huang, et al. "High-Performance InGaN p-i-n Photodetectors Using LED Structure and Surface Texturing." IEEE Photonics Technology Letters 28, no. 6 (2016): 605–8. http://dx.doi.org/10.1109/lpt.2015.2500272.

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37

Yeh, L. S., M. L. Lee, J. K. Sheu, et al. "Visible–blind GaN p–i–n photodiodes with an Al0.12Ga0.88N/GaN superlattice structure." Solid-State Electronics 47, no. 5 (2003): 873–78. http://dx.doi.org/10.1016/s0038-1101(02)00441-0.

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38

An, X. E., Z. J. Shang, C. H. Ma, et al. "Field dependent ultrafast carrier dynamics in InGaN/GaN p-i(MQW)-n structure." Superlattices and Microstructures 137 (January 2020): 106354. http://dx.doi.org/10.1016/j.spmi.2019.106354.

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39

Serin, T., and N. Serin. "The effect of annealing on the resistance of a p/i/n structure." Semiconductor Science and Technology 9, no. 11 (1994): 2097–100. http://dx.doi.org/10.1088/0268-1242/9/11/010.

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40

Manyakhin, F. I., and L. O. Mokretsova. "Modeling of energy structure p-i-n transition on the basis of GaN." Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering 20, no. 4 (2021): 284–90. http://dx.doi.org/10.17073/1609-3577-2017-4-284-290.

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The differential equation of the second order including function of distribution of density of a mobile charge in the compensated layer p-i-n of transition of the diode on the basis of GaN is received. The decision of the equation is executed by a numerical method with application of program MathCad. The electric field on border of the compensated layer (CL) and the compensated layer pays off from a condition, that concentration made diffusion in CL of electrons is much more than concentration of the motionless compensated ions of an impurity. Electrons from strongly alloyed layer made diffusi

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41

Lapteva, U. A., A. Yu Baranov, D. G. Samsonenko, and A. V. Artem’ev. "A four-nuclear Ag(I) complex supported by a N,N',N'',P-ligand: synthesis, crystal and electronic structure." Журнал структурной химии 63, no. 4 (2022): 527–29. http://dx.doi.org/10.26902/jsc_id95901.

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A four-nuclear complex [Ag4(Lut3P)2(MeCN)2](BF4)4 has been synthesized by the treatment of tris[(6-methylpyridin-2-yl)methyl]phosphine (Lut3P) with AgBF4 in MeCN solution. The crystal and electronic structure of the obtained complex were studied using X-ray diffraction analysis and DFT computations. Moreover, solid-state photoluminescence of title compound has been examined at ambient temperature.

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42

Lapteva, U. A., A. Yu Baranov, D. G. Samsonenko, and A. V. Artem′ev. "A FOUR-NUCLEAR Ag(I) COMPLEX SUPPORTED BY A N,N′,N″,P-LIGAND: SYNTHESIS, CRYSTAL AND ELECTRONIC STRUCTURE." Journal of Structural Chemistry 63, no. 4 (2022): 663–68. http://dx.doi.org/10.1134/s0022476622040199.

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43

Zhang, Lei, Dong-Ying Zhou, Bo Wang, et al. "Enhanced efficiency and stability in organic light-emitting diodes by employing a p-i-n-p structure." Applied Physics Letters 109, no. 17 (2016): 173302. http://dx.doi.org/10.1063/1.4966544.

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44

Zhou Mei and Zhao De-Gang. "Effect of p-GaN layer thickness on the performance of p-i-n structure GaN ultraviolet photodetectors." Acta Physica Sinica 57, no. 7 (2008): 4570. http://dx.doi.org/10.7498/aps.57.4570.

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45

Miki, K., T. Abe, J. Naruse, et al. "Highly sensitive ultraviolet PIN photodiodes of ZnSSe n+–i–p structure/p+-GaAs substrate grown by MBE." physica status solidi (b) 243, no. 4 (2006): 950–54. http://dx.doi.org/10.1002/pssb.200564720.

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46

Wattanakanjana, Yupa, Arunpatcha Nimthong-Roldán та Janejira Ratthiwan. "Crystal structure of [1,3-bis(diphenylphosphanyl)propane-κ2P,P′](N,N′-dimethylthiourea-κS)(thiocyanato-κN)copper(I)". Acta Crystallographica Section E Crystallographic Communications 71, № 3 (2015): m61—m62. http://dx.doi.org/10.1107/s2056989015002479.

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The asymmetric unit of the title compound, [Cu(NCS)(C3H8N2S)(C27H26P2)], contains two independent mononuclear complex molecules. In each, the CuIion exhibits a distorted tetrahedral geometry by coordination with two P atoms from one 1,3-bis(diphenylphosphino)propane (dppm) ligand, one terminal S atom of oneN,N′-dimethylthiourea (dmtu) ligand and one terminal N atom of the thiocyanato ligand. The dppp ligand is involved in a bidentate coordination mode with the CuIion, forming a six-membered CuP2C3ring. In both molecules, the coordination of the dmtu ligand is further stabilized by an intramole

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47

Yeo, Chien Ing, Yi Jiun Tan, Aya Shiomitsu, Jactty Chew, Nathan R. Halcovitch та Edward R. T. Tiekink. "Crystal structure of bis[μ2-(N,N-diethylcarbamodithioato-κS:κS,κS′)]-bis(triethylphosphine-P)-di-silver(I), C22H50Ag2N2P2S4". Zeitschrift für Kristallographie - New Crystal Structures 235, № 6 (2020): 1365–68. http://dx.doi.org/10.1515/ncrs-2020-0317.

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AbstractC22H50Ag2N2P2S4, triclinic, P1̄ (no. 2), a = 9.0672(2) Å, b = 11.2091(3) Å, c = 16.6853(4) Å, α = 91.097(2)°, β = 90.363(2)°, γ = 110.989(2)°, V = 1582.85(7) Å3, Z = 2, Rgt(F) = 0.0241, wRref(F2) = 0.0653, T = 100(2) K.

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48

Polischuk, O. V., D. V. Fateev, and V. V. Popov. "Amplification of terahertz radiation in a plasmon n–i–p–i graphene structure with charge-carrier injection." Semiconductors 51, no. 11 (2017): 1460–65. http://dx.doi.org/10.1134/s1063782617110240.

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49

Albert Cotton, F., та Rinaldo Poli. "Iridium(I) dimers with bridging N,N′-di-p-tolylformamidine. X-ray molecular structure of Ir2(μ-p-CH3C6H4NCHN-p-C6H4CH3)(μ-NH-p-C6H4CH3)(C8H14)2". Inorganica Chimica Acta 122, № 2 (1986): 243–48. http://dx.doi.org/10.1016/s0020-1693(00)81646-1.

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50

Yokoyama, Meiso, Shui-Hsiang Su, Cheng-Chieh Hou, Chung-Ta Wu, and Chun-Hao Kung. "Highly Efficient White Organic Light-Emitting Diodes with a p–i–n Tandem Structure." Japanese Journal of Applied Physics 50, no. 4S (2011): 04DK06. http://dx.doi.org/10.7567/jjap.50.04dk06.

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