Relevant bibliographies by topics / P–n homo–junction diode

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  1. Journal articles
  2. Dissertations / Theses
  3. Book chapters
  4. Conference papers
  5. Reports

Academic literature on the topic 'P–n homo–junction diode'

Author: Grafiati
Published: 3 June 2025
Last updated: 31 July 2025

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Journal articles on the topic "P–n homo–junction diode"

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Um, J., and S. E. Kim. "Homo-Junction pn Diode Using p-Type SnO and n-Type SnO2 Thin Films." ECS Solid State Letters 3, no. 8 (2014): P94—P98. http://dx.doi.org/10.1149/2.0051408ssl.

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Fu, Kai. "(Invited) Wide Bandgap Semiconductor Homo- and Hetero-P-N Junctions." ECS Meeting Abstracts MA2024-01, no. 32 (2024): 1576. http://dx.doi.org/10.1149/ma2024-01321576mtgabs.

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Wide bandgap (WBG) semiconductors, such as gallium nitride (GaN), gallium oxide (Ga2O3), aluminum nitride (AlN), and diamond, hold immense promise for power electronics applications by drastically reducing power loss, enhancing switching frequency, and reducing system volume. However, effective doping (p-type or n-type) remains a substantial challenge for these materials, given that the p-n junction is a fundamental building block for device design. Selective-area doping, crucial for high-performance electronic devices and integrated circuits, poses another significant obstacle. We report rece
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Dewan, Sheetal, Monika Tomar, R. P. Tandon, and Vinay Gupta. "Zn doping induced conductivity transformation in NiO films for realization of p-n homo junction diode." Journal of Applied Physics 121, no. 21 (2017): 215307. http://dx.doi.org/10.1063/1.4984580.

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Nakayama, Yasuo. "(Invited, Digital Presentation) Epitaxial Organic Molecular Interfaces As Well-Ordered Model Systems for Molecular Semiconductor p-n Junctions for Optoelectronic Applications." ECS Meeting Abstracts MA2022-01, no. 13 (2022): 907. http://dx.doi.org/10.1149/ma2022-0113907mtgabs.

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Donor-acceptor molecular interfaces are nothing but p-n junctions for organic optoelectronic devices such as organic light emitting diodes and organic solar cells where an exciton forms or dissociates. Understanding about dominating factors determining the intermolecular assembly and charge carrier exchange processes are highly anticipated for the establishment of smart design strategies of practically efficient devices. Molecular heterojunctions built on single crystal organic semiconductors provide well-ordered model systems disentangling complex intermolecular contacts in real devices. More
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Gaewdang, Thitinai, and Ngamnit Wongcharoen. "Heterojunction Properties of p-CuO/n-CdS Diode." Advanced Materials Research 1098 (April 2015): 1–5. http://dx.doi.org/10.4028/www.scientific.net/amr.1098.1.

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In this paper, p-CuO/n-CdS heterojunction was prepared by thermal evaporating CdS thin films on CuO 1 mm thick ceramic pellet substrate. The electrical properties of p-CuO/n-CdS heterojunction were investigated by forward current–voltage–temperature (I–V–T) characteristics in the temperature range of 100-300 K. The junction barrier height, ideality factor, and the series resistance values of the diode evaluated by using thermionic emission (TE) theory and Cheung’s method are 0.566 eV, 5.535 and 618.24 Ω at 300 K, respectively. The junction barrier height, ideality factor and series resistance
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Momose, N., J. Shirai, H. Tahara, Y. Todoroki, T. Hara та Y. Hashimoto. "Toward the β-FeSi2 p-n homo-junction structure". Thin Solid Films 515, № 22 (2007): 8210–15. http://dx.doi.org/10.1016/j.tsf.2007.02.037.

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Chen, Wen Li, Xia Zhang, Xin Yan, Jun Shuai Li, Yong Qing Huang, and Xiao Min Ren. "Theoretical Analysis of Electrical Properties of GaAs Substrate-Nanowire P-N Junction." Advanced Materials Research 875-877 (February 2014): 394–98. http://dx.doi.org/10.4028/www.scientific.net/amr.875-877.394.

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We theoretically analyze the electrical properties of GaAs substrate-nanowire p-n junction using Technology Computer Aided Design (TCAD). The results show that GaAs nanowire-substrate p-n junction exhibits clear diode behavior which has been confirmed in some experiments. Increasing NWs doping concentration and diameter or shortening NWs length can enlarge the total current after the diode is conducted. Total current through p-n junction is approximately linearly proportional to NWs growth density. The substrate-nanowires p-n junction has smaller current than that of substrate-layer p-n juncti
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SUN, J., B. PAL, B. JUNG, and H. KATZ. "Solution-processed hybrid p–n junction vertical diode." Organic Electronics 10, no. 1 (2009): 1–7. http://dx.doi.org/10.1016/j.orgel.2008.08.016.

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Holonyak, Nick. "The Semiconductor p–n Junction “Ultimate Lamp”." MRS Bulletin 30, no. 7 (2005): 515–17. http://dx.doi.org/10.1557/mrs2005.143.

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AbstractSimple diagrams are used to show the transformation of a thin sample of intrinsic, direct-gap semiconductor from an ideal “flat-band” photopumped recombination-radiation light source into a current-driven, p–n junction “ultimate lamp,” a light-emitting diode.
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Ono, Shuichi, S. Katakami, and Manabu Arai. "Avalanche Breakdown Characteristics of 4H-SiC Graded p+-n Junction Formed with Aluminum Ion-Implanted p+-Layer." Materials Science Forum 615-617 (March 2009): 675–78. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.675.

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The avalanche breakdown characteristics of a graded p+-n junction formed with aluminum ion-implantation for 4H-SiC were investigated. The breakdown voltage of the graded p+-n junction was calculated using a commercial process/device simulator and considering the ion-implanted distribution of aluminum. To compare the calculated results to the experimental results, a p+/n/n+ diode with an aluminum ion-implanted p+-layer was fabricated on a 2.8-μm-thick 1.1 × 1017-cm-3 n-type epitaxial layer. The breakdown voltage of the fabricated diode showed a higher breakdown voltage than that of the calculat
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Dissertations / Theses on the topic "P–n homo–junction diode"

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Hu, Yujie. "Magnetic Diode-From p-n Junction to Ohmic Contact." VCU Scholars Compass, 2004. http://scholarscompass.vcu.edu/etd_retro/60.

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This paper reviews the analytical strategy employed in conventional p-n junction. Then it goes through the analysis of magnetic p-n junction in the same strategy, which makes the review of magnetic p-n junction succinct. I-V equation of magnetic diode is the result of the p-n junction analysis. However, of great importance is to form an acceptable ohmic contact on magnetic diode, which is assumed to be ideal during the magnetic p-n junction analysis. The paper moves on to ohmic contact for magnetic diode, with the example of GaN based magnetic material. With the calculation of the shift of Fer
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Wu, Wenyi. "Space Charge Doped p-n Junction : 2D Diode with Few-layer Indium Selenide." Electronic Thesis or Diss., Sorbonne université, 2020. http://www.theses.fr/2020SORUS449.

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Ce travail allie les propriétés singulières des matériaux 2D à une technique innovante utilisée pour modifier les propriétés électroniques des films ultra-minces pour proposer une nouvelle technologie permettant de réaliser le dispositif électronique le plus simple, la diode. Tout d'abord, nous identifions les matériaux semi-conducteurs pouvant être fabriqué en couches ultra-minces. Deuxièmement, nous utilisons une technique appelée dopage par charge d'espace développée dans notre groupe pour le dopage n ou p des matériaux. Enfin, nous obtenons les caractéristiques de diode des dispositifs. Le
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Lubuna, Beegum Shafeek. "Organic-Inorganic Hetero Junction White Light Emitting Diode : N-type ZnO and P-type conjugated polymer." Thesis, Linköping University, Department of Science and Technology, 2008. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-11195.

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<p>The purpose of this thesis work is to design and fabricates organic-inorganic hetero junction White Light Emitting Diode (WLED). In this WLED, inorganic material is n- type ZnO and organic material is p-type conjugated polymer. The first task was to synthesise vertically aligned ZnO nano-rods on glass as well as on plastic substrates using aqueous chemical growth method at a low temperature. The second task was to find out the proper p- type organic material that gives cheap and high efficient WLED operation. The proposed polymer shouldn’t create a high barrier potential across the interfac
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Mayorov, Alexander. "Tunnelling and noise in GaAs and graphene nanostructures." Thesis, University of Exeter, 2008. http://hdl.handle.net/10036/46914.

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Experimental studies presented in this thesis have shown the first realisation of resonant tunnelling transport through two impurities in a vertical double-barrier tunnelling diode; have proved the chiral nature of charge carriers in graphene by studying ballistic transport through graphene $p$-$n$ junctions; have demonstrated significant differences of $1/f$ noise in graphene compared with conventional two-dimensional systems. Magnetic field parallel to the current has been used to investigate resonant tunnelling through a double impurity in a vertical double-barrier resonant tunnelling diode
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Cunin, Bernard. "Etude et realisation d'un modulateur parametrique a double bande laterale fonctionnant a 10 ghz : application a la detection d'impulsions lumineuses breves." Université Louis Pasteur (Strasbourg) (1971-2008), 1987. http://www.theses.fr/1987STR13127.

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Les proprietes d'un modulateur parametrique sont analysees. On montre que ce dispositif, constitue par la capacite variable d'une jonction pn pompee a 10 ghz, est caracterise par un gain de conversion, une impedance d'entree capacitive et un bruit interne tres reduit et qu'en consequence un systeme de detection optique, forme par une diode pin rapide couplee au convertisseur parametrique, presente un rapport signal a bruit superieur a celui des dispositifs de detection sans amplification interne habituellement utilises, au moins tant que la bande passante video est inferieure a 4 ghz. Enfin, o
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Chaves, De Albuquerque Tulio. "Integration of Single Photon Avalanche Diodes in Fully Depleted Silicon-on-Insulator Technology." Thesis, Lyon, 2019. http://www.theses.fr/2019LYSEI091.

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Ce travail a pour objectif la conception, la simulation, la modélisation et la caractérisation électrique de diodes à avalanche à photon unique (Single Photon Avalanche Diodes - SPAD) intégrées dans une technologie CMOS Fully Depleted Silicon on Insulator - FDSOI. Les SPAD sont des diodes (jonctions PN) polarisées en inverse au-delà de la tension de claquage, fonctionnant dans le mode Geiger. Grace à leur haute sensibilité et rapidité, les SPAD sont utiles pour plusieurs applications, telles que les mesures de temps de vol (Time of Flight - ToF), l’imagerie médicale (Fluorescence Lifetime Imag
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Nien, Yi-Hsin, and 粘逸昕. "Germanium P-N Junction Light Emitting Diode." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/77003483256756392472.

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碩士<br>國立臺灣大學<br>光電工程學研究所<br>100<br>In this thesis, we discussed the reduction of direct bandgap emission which is caused by the reabsorption effect of Germanium emission. The variation of effective lifetime caused by different surface recombination velocity affects the carrier distribution profile. As the reabsorption effect is a function of distance, carriers diffuse to the deeper side of wafer which enhances reabsorption effect by decreasing back surface recombination velocity. By the way, extremely large back surface recombination velocity leads the carrier to crowd at the surface to redu
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Chen, Shin-Huei, and 陳昕輝. "W Contacted P+N Junction Diode Using Selective W-CVD." Thesis, 1996. http://ndltd.ncl.edu.tw/handle/30336415065269209489.

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碩士<br>國立交通大學<br>電子研究所<br>84<br>This thesis studies the W contacted p+n junction diode with the W film deposited using the selective W-CVD technique. For the Cu/W/p+n junction diode with a W layer of 300 nm, a thermal treatment at 600 C for 30 min caused slight degradation to the devices characteristics. With formation of a self-aligned WNx layer on the W surface by post CVD-W in situ N2 plasma treatment, the device remained stable after annealing at 600 C for 30 min. However, degradation
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Book chapters on the topic "P–n homo–junction diode"

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Li, Simon, and Yue Fu. "P-N Junction Diode." In 3D TCAD Simulation for Semiconductor Processes, Devices and Optoelectronics. Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4614-0481-1_5.

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Balkan, Naci, and Ayşe Erol. "The p-n Junction Diode." In Graduate Texts in Physics. Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-319-44936-4_4.

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Ocaya, Richard. "Determining p-n Junction Band Gap." In Extraction of Semiconductor Diode Parameters. Springer Nature Switzerland, 2024. http://dx.doi.org/10.1007/978-3-031-48847-4_1.

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Wartak, Marek S. "Matlab Code for p-n Homo-Diode." In Introduction to Simulations of Semiconductor Lasers. CRC Press, 2024. http://dx.doi.org/10.1201/9781003265849-10.

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Litovski, Vančo. "1.3 The p-n Junction and the Diode." In Lecture Notes in Electrical Engineering. Springer Nature Singapore, 2023. http://dx.doi.org/10.1007/978-981-19-9868-3_3.

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Prasad, R. "p-n Junction Diode: A Basic Non-linear Device." In Undergraduate Lecture Notes in Physics. Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-65129-9_5.

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Kim, Dae Mann, Bong Koo Kang, and Yoon-Ha Jeong. "P–N Junction Diode: I–V Behavior and Applications." In Nanowire Field Effect Transistors: Principles and Applications. Springer New York, 2013. http://dx.doi.org/10.1007/978-1-4614-8124-9_3.

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Li, Shaocheng, Shu Yang, Weibing Hao, Guangwei Xu, and Shibing Long. "Vertical GaN Junction Barrier Schottky Diode with p-NiO/n-GaN Hetero-Junction." In Conference Proceedings of the 2023 3rd International Joint Conference on Energy, Electrical and Power Engineering. Springer Nature Singapore, 2024. http://dx.doi.org/10.1007/978-981-97-3940-0_54.

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Simoen, Eddy, C. Claeys, and Jan Vanhellemont. "Defect Analysis in Semiconductor Materials Based on p-n Junction Diode Characteristics." In Defect and Diffusion Forum. Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/3-908451-37-x.1.

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Moscatelli, Francesco, Andrea Scorzoni, Antonella Poggi, et al. "Minimum Ionizing Particle Detector Based on p+n Junction SiC Diode." In Silicon Carbide and Related Materials 2005. Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.1469.

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Conference papers on the topic "P–n homo–junction diode"

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Patra, Subhasish, Sachindranath Das, and Jae-Min Myoung. "Synthesis of N-doped P-type ZnO nanostructures by MOCVD method and formation of homo and hetero junction diode." In Proceedings of the International Conference on Nanotechnology for Better Living. Research Publishing Services, 2016. http://dx.doi.org/10.3850/978-981-09-7519-7nbl16-rps-146.

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Singh, Budhi, and Subhasis Ghosh. "ZnO based organic-inorganic hybrid p-n junction diode." In SOLID STATE PHYSICS: PROCEEDINGS OF THE 57TH DAE SOLID STATE PHYSICS SYMPOSIUM 2012. AIP, 2013. http://dx.doi.org/10.1063/1.4791114.

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Shamsir, Samira, Laila Parvin Poly, and Samia Subrina. "Electrostatic analysis of graphene nanoribbon p-n junction diode." In 2015 IEEE International WIE Conference on Electrical and Computer Engineering (WIECON-ECE). IEEE, 2015. http://dx.doi.org/10.1109/wiecon-ece.2015.7444014.

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Shimogaki, T., T. Ofuji, N. Tetsuyama, et al. "Applications of nanosecond laser annealing to fabricating p-n homo junction on ZnO nanorods." In SPIE OPTO, edited by Ferechteh Hosseini Teherani, David C. Look, and David J. Rogers. SPIE, 2013. http://dx.doi.org/10.1117/12.2003856.

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Li, Hongjian, Hao-Yang Cui, Baiyun Huang, Danqing Yi, and Jingcui Peng. "Visible electro-luminescence from p-n junction porous Si diode." In Asia-Pacific Optical and Wireless Communications. SPIE, 2004. http://dx.doi.org/10.1117/12.523014.

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Shimizu, R., J. Pu, T. Fujimoto, et al. "Single-Walled Carbon-Nanotube P-N Junction Diode for Optoelectronics." In 2013 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2013. http://dx.doi.org/10.7567/ssdm.2013.c-1-2.

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Pati, S. P., P. R. Tripathy, S. K. Choudhury, M. Mukharjee, and P. Purohit. "Si, SiC homo junctions and n-SiC/p-Si hetero junction: MM-wave performance characteristics." In 16th International Workshop on Physics of Semiconductor Devices, edited by Monica Katiyar, B. Mazhari, and Y. N. Mohapatra. SPIE, 2012. http://dx.doi.org/10.1117/12.926955.

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Gnatyuk, Volodymyr A., Serhii Levytskyi, Olena Maslyanchuk, Oleksandr Kulyk та Toru Aoki. "Performance of CdTe-based p-n junction-diode X/γ-ray detectors". У Fifteenth International Conference on Correlation Optics, редактор Oleg V. Angelsky. SPIE, 2021. http://dx.doi.org/10.1117/12.2615569.

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Adam, Gina C., and Susan M. Lord. "Design and Evaluation of an Educational Simulation for the P-N Junction Diode." In 2017 27th EAEEIE Annual Conference (EAEEIE). IEEE, 2017. http://dx.doi.org/10.1109/eaeeie.2017.8768728.

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Fernandes, Maria Augusta R. B. L., and Edval J. P. Santos. "Measurement of p-n-junction diode behavior under large signal and high frequency." In 2014 29th Symposium on Microelectronics Technology and Devices (SBMicro). IEEE, 2014. http://dx.doi.org/10.1109/sbmicro.2014.6940086.

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Reports on the topic "P–n homo–junction diode"

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Chang, Richard K. P-N Junction Diode Ultra-Violet Lasers with Directional Emission from Non-Circular Optical Cavities for Bio Sensing. Defense Technical Information Center, 2003. http://dx.doi.org/10.21236/ada421018.

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Chang, Richard K. P-N Junction Diode Ultra-Violet Lasers with Directional Emission from Non-Circular Optical Cavities for Bio Sensing Applications. Defense Technical Information Center, 2001. http://dx.doi.org/10.21236/ada388379.

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