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Journal articles on the topic 'P–n homo–junction diode'

Author: Grafiati

Published: 3 June 2025

Last updated: 31 July 2025

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1

Um, J., and S. E. Kim. "Homo-Junction pn Diode Using p-Type SnO and n-Type SnO2 Thin Films." ECS Solid State Letters 3, no. 8 (2014): P94—P98. http://dx.doi.org/10.1149/2.0051408ssl.

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2

Fu, Kai. "(Invited) Wide Bandgap Semiconductor Homo- and Hetero-P-N Junctions." ECS Meeting Abstracts MA2024-01, no. 32 (2024): 1576. http://dx.doi.org/10.1149/ma2024-01321576mtgabs.

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Wide bandgap (WBG) semiconductors, such as gallium nitride (GaN), gallium oxide (Ga2O3), aluminum nitride (AlN), and diamond, hold immense promise for power electronics applications by drastically reducing power loss, enhancing switching frequency, and reducing system volume. However, effective doping (p-type or n-type) remains a substantial challenge for these materials, given that the p-n junction is a fundamental building block for device design. Selective-area doping, crucial for high-performance electronic devices and integrated circuits, poses another significant obstacle. We report rece

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3

Dewan, Sheetal, Monika Tomar, R. P. Tandon, and Vinay Gupta. "Zn doping induced conductivity transformation in NiO films for realization of p-n homo junction diode." Journal of Applied Physics 121, no. 21 (2017): 215307. http://dx.doi.org/10.1063/1.4984580.

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4

Nakayama, Yasuo. "(Invited, Digital Presentation) Epitaxial Organic Molecular Interfaces As Well-Ordered Model Systems for Molecular Semiconductor p-n Junctions for Optoelectronic Applications." ECS Meeting Abstracts MA2022-01, no. 13 (2022): 907. http://dx.doi.org/10.1149/ma2022-0113907mtgabs.

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Donor-acceptor molecular interfaces are nothing but p-n junctions for organic optoelectronic devices such as organic light emitting diodes and organic solar cells where an exciton forms or dissociates. Understanding about dominating factors determining the intermolecular assembly and charge carrier exchange processes are highly anticipated for the establishment of smart design strategies of practically efficient devices. Molecular heterojunctions built on single crystal organic semiconductors provide well-ordered model systems disentangling complex intermolecular contacts in real devices. More

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5

Gaewdang, Thitinai, and Ngamnit Wongcharoen. "Heterojunction Properties of p-CuO/n-CdS Diode." Advanced Materials Research 1098 (April 2015): 1–5. http://dx.doi.org/10.4028/www.scientific.net/amr.1098.1.

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In this paper, p-CuO/n-CdS heterojunction was prepared by thermal evaporating CdS thin films on CuO 1 mm thick ceramic pellet substrate. The electrical properties of p-CuO/n-CdS heterojunction were investigated by forward current–voltage–temperature (I–V–T) characteristics in the temperature range of 100-300 K. The junction barrier height, ideality factor, and the series resistance values of the diode evaluated by using thermionic emission (TE) theory and Cheung’s method are 0.566 eV, 5.535 and 618.24 Ω at 300 K, respectively. The junction barrier height, ideality factor and series resistance

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6

Momose, N., J. Shirai, H. Tahara, Y. Todoroki, T. Hara та Y. Hashimoto. "Toward the β-FeSi2 p-n homo-junction structure". Thin Solid Films 515, № 22 (2007): 8210–15. http://dx.doi.org/10.1016/j.tsf.2007.02.037.

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7

Chen, Wen Li, Xia Zhang, Xin Yan, Jun Shuai Li, Yong Qing Huang, and Xiao Min Ren. "Theoretical Analysis of Electrical Properties of GaAs Substrate-Nanowire P-N Junction." Advanced Materials Research 875-877 (February 2014): 394–98. http://dx.doi.org/10.4028/www.scientific.net/amr.875-877.394.

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We theoretically analyze the electrical properties of GaAs substrate-nanowire p-n junction using Technology Computer Aided Design (TCAD). The results show that GaAs nanowire-substrate p-n junction exhibits clear diode behavior which has been confirmed in some experiments. Increasing NWs doping concentration and diameter or shortening NWs length can enlarge the total current after the diode is conducted. Total current through p-n junction is approximately linearly proportional to NWs growth density. The substrate-nanowires p-n junction has smaller current than that of substrate-layer p-n juncti

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8

SUN, J., B. PAL, B. JUNG, and H. KATZ. "Solution-processed hybrid p–n junction vertical diode." Organic Electronics 10, no. 1 (2009): 1–7. http://dx.doi.org/10.1016/j.orgel.2008.08.016.

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9

Holonyak, Nick. "The Semiconductor p–n Junction “Ultimate Lamp”." MRS Bulletin 30, no. 7 (2005): 515–17. http://dx.doi.org/10.1557/mrs2005.143.

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AbstractSimple diagrams are used to show the transformation of a thin sample of intrinsic, direct-gap semiconductor from an ideal “flat-band” photopumped recombination-radiation light source into a current-driven, p–n junction “ultimate lamp,” a light-emitting diode.

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10

Ono, Shuichi, S. Katakami, and Manabu Arai. "Avalanche Breakdown Characteristics of 4H-SiC Graded p⁺-n Junction Formed with Aluminum Ion-Implanted p⁺-Layer." Materials Science Forum 615-617 (March 2009): 675–78. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.675.

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The avalanche breakdown characteristics of a graded p+-n junction formed with aluminum ion-implantation for 4H-SiC were investigated. The breakdown voltage of the graded p+-n junction was calculated using a commercial process/device simulator and considering the ion-implanted distribution of aluminum. To compare the calculated results to the experimental results, a p+/n/n+ diode with an aluminum ion-implanted p+-layer was fabricated on a 2.8-μm-thick 1.1 × 1017-cm-3 n-type epitaxial layer. The breakdown voltage of the fabricated diode showed a higher breakdown voltage than that of the calculat

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11

Cai, Guangshuo, Caoyuan Mu, Jiaosheng Li, et al. "Vertical Diamond p-n Junction Diode with Step Edge Termination Structure Designed by Simulation." Micromachines 14, no. 9 (2023): 1667. http://dx.doi.org/10.3390/mi14091667.

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In this paper, diamond-based vertical p-n junction diodes with step edge termination are investigated using a Silvaco simulation (Version 5.0.10.R). Compared with the conventional p-n junction diode without termination, the step edge termination shows weak influences on the forward characteristics and helps to suppress the electric field crowding. However, the breakdown voltage of the diode with simple step edge termination is still lower than that of the ideal parallel-plane one. To further enhance the breakdown voltage, we combine a p-n junction-based junction termination extension on the st

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12

Lima, João V. M., Stevan B. O. Santos, Rafael A. Silva, Miguel H. Boratto, Carlos F. O. Graeff, and Luis V. A. Scalvi. "Anomalous diode behavior of Cu2S/SnO2 p–n junction." Journal of Materials Science: Materials in Electronics 32, no. 16 (2021): 21804–12. http://dx.doi.org/10.1007/s10854-021-06703-x.

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13

Duyen-Thi Nguyen, Khanh Nguyen, Duc-Minh Truong, and Huy-Binh Do. "Electrical Properties of GaN/Ga2O3 P-N Junction Diodes: A TCAD Study." Journal of Technical Education Science 19, SI03 (2024): 7–12. http://dx.doi.org/10.54644/jte.2024.1481.

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Ga2O3 and GaN are promising candidates for the fabrication of high power semiconductor devices due to their wide band-gap range, deteremined from 3.0 eV to 4.9 eV. Among these materials, the GaN/Ga2O3 P-N junction diode has an excellent performance even at high temperatures, making it suitable for high-power applications. In this work, GaN/Ga2O3 P-N junction diodes are investigated using computer-aided design (TCAD) simulations. The properties of the diode were optimized in terms of the thickness of the p-type GaN layer and its doping concentration. It was found that the current-voltage (IV) c

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14

Arith, Faiz, S. A. M. Anis, Muzalifah Mohd Said, and Cand M. Idzdihar Idris. "Low Cost Electro-Deposition of Cuprous Oxide P-N Homo-Junction Solar Cell." Advanced Materials Research 827 (October 2013): 38–43. http://dx.doi.org/10.4028/www.scientific.net/amr.827.38.

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Most of the photovoltaic industry uses wafer of single-crystal and poly-crystal silicon as a material of their photovoltaic (PV) modules. However, the cost of these modules is high due to the material and processing cost. Cuprous oxides (Cu2O) have several features that suitable for future photovoltaic applications. Cu2O can be prepared with simple methods at very low cost. Cu2O p-n homojunction solar cell is a device that converts sunlight to electrical energy, consists of two similar materials for its p-n junction, which is Cu2O. The p-type and n-type of Cu2O thin films are then fabricated t

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15

Nagata, Kengo, Satoshi Anada, Yoshiki Saito, et al. "Visualization of depletion layer in AlGaN homojunction p–n junction." Applied Physics Express 15, no. 3 (2022): 036504. http://dx.doi.org/10.35848/1882-0786/ac53e2.

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Abstract We analyzed the p–n junction of an aluminum gallium nitride (AlGaN) homojunction tunnel junction (TJ) deep-ultraviolet light-emitting diode by phase-shifting electron holography. We clearly obtained a phase image reflecting the band alinement of the p–n homojunction and derived a depletion layer width of approximately 10 nm. In addition, the observed depletion layer width for the AlGaN TJ was in good agreement with the simulated one reflecting the diffusion profile of Mg and Si, thus enabling a discussion on the electrical conduction mechanism for an AlGaN p–n junction.

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16

Abuelma'atti, Muhammad Taher. "Harmonic Generation by Nondegenerate P-N Junction Varactor Diodes." Active and Passive Electronic Components 19, no. 4 (1997): 205–15. http://dx.doi.org/10.1155/1997/41759.

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This paper deals with the large-signal analysis of nondegenerate p-n junction varactor diodes. Expressions are obtained for the harmonics of the varactor diode current when driven by a sinusoidal voltage signal. The special case of relatively small input amplitudes is considered and the results are compared with previously published results.

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17

Czerwinski, A., Eddy Simoen, A. Poyai, and Cor Claeys. "P-N- Junction Peripheral Current Analysis using Gated Diode Measurements." Solid State Phenomena 69-70 (August 1999): 437–42. http://dx.doi.org/10.4028/www.scientific.net/ssp.69-70.437.

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18

Czerwinski, A., E. Simoen, and C. Claeys. "p-n junction peripheral current analysis using gated diode measurements." Applied Physics Letters 72, no. 26 (1998): 3503–5. http://dx.doi.org/10.1063/1.121641.

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19

Aizawa, M., H. Shinohara, T. Yamada, K. Akagi, and H. Shirakawa. "Electrochemical fabrication of a polypyrrole/polythiophene p-n junction diode." Synthetic Metals 18, no. 1-3 (1987): 711–14. http://dx.doi.org/10.1016/0379-6779(87)90966-0.

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20

Aizawa, Masuo, Teruyuki Yamada, Hiroaki Shinohara, Kazuo Akagi, and Hideki Shirakawa. "Electrochemical fabrication of a polypyrrole–polythiophene p–n junction diode." J. Chem. Soc., Chem. Commun., no. 17 (1986): 1315–17. http://dx.doi.org/10.1039/c39860001315.

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21

Hierro, A., D. Kwon, S. A. Ringel, et al. "Deep levels in n-type Schottky and p+-n homojunction GaN diodes." MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 922–28. http://dx.doi.org/10.1557/s1092578300005275.

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The deep level spectra in both p+-n homojunction and n-type Schottky GaN diodes are studied by deep level transient spectroscopy (DLTS) in order to compare the role of the junction configuration on the defects found within the n-GaN layer. Both majority and minority carrier DLTS measurements are performed on the diodes allowing the observation of both electron and hole traps in n-GaN. An electron level at Ec−Et=0.58 and 0.62 V is observed in the p+-n and Schottky diodes, respectively, with a concentration of ∼3−4×1014 cm−3 and a capture cross section of ∼1−5×10−15 cm2. The similar Arrhenius be

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22

Zhang, Dongyuan, Kazuo Uchida, and Shinji Nozaki. "Fabrication of a p-NiO/n-Si Heterojunction Diode by UV Oxidation of Ni Deposited on n-Si." MRS Proceedings 1494 (2013): 305–9. http://dx.doi.org/10.1557/opl.2013.520.

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ABSTRACTThe metallic nickel (Ni) deposited on an n-Si substrate with resistivity of 4 – 6 Ω∙cm was oxidized by the ultra-violet (UV) oxidation technique to form a p-NiO/n-Si heterojunction diode. The rectifying current-voltage (I-V) characteristic confirmed formation of a pn junction. The capacitance-voltage (C-V) characteristic further identified an abrupt p+n junction between NiO and n-Si. The photocurrent increased with the increased wavelength of laser under illumination of the diode. The voltage-dependent photocurrent suggests that the carriers generated in the depletion region of Si was

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23

Srithanachai, Itsara, Surada Ueamanapong, Amporn Poyai, and Surasak Niemcharoen. "New Method for Improving the Electrical Characteristics of P-N Junction Diode." Advanced Materials Research 378-379 (October 2011): 606–9. http://dx.doi.org/10.4028/www.scientific.net/amr.378-379.606.

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This paper investigates the effect of soft X-ray irradiation various energy and times on P-N junction diodes. X-ray energy irradiated on P-N junction diode with 55 and 70 keV with various time in the range 5-50 sec. After irradiations were study on the current-voltage (I-V) characteristics and capacitance-voltage (C-V) characteristics. Leakages current after irradiated by X-ray are not change, while forward current are increase about 3 orders. The change of current-voltage characteristics can analyze by many parameter such as carrier lifetime and series resistance. Capacitance-voltage characte

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24

Shi, Gaoquan, Bo Yu, Gi Xue, Shi Jin, and Cun Li. "Electrochemical fabrication of a P-type silicon–polythiophene p–n junction diode." J. Chem. Soc., Chem. Commun., no. 22 (1994): 2549–50. http://dx.doi.org/10.1039/c39940002549.

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25

Salem, Marwa S., Ahmed Shaker, Abdelhalim Zekry, et al. "Analysis of Hybrid Hetero-Homo Junction Lead-Free Perovskite Solar Cells by SCAPS Simulator." Energies 14, no. 18 (2021): 5741. http://dx.doi.org/10.3390/en14185741.

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In this work, we report on the effect of substituting the active intrinsic i-layer on a conventional pin structure of lead-free perovskite solar cell (PSC) by a homo p-n junction, keeping the thickness of the active layer constant. It is expected that when the active i-layer is substituted by a p-n homo junction, one can increase the collection efficiency of the photo-generated electrons and holes due to the built-in electric field of the homo junction. The impact of the technological and physical device parameters on the performance parameters of the solar cell have been worked out. It was fo

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26

Simoen, Eddy, Cor Claeys, and Jan Vanhellemont. "Defect Analysis in Semiconductor Materials Based on p-n Junction Diode Characteristics." Defect and Diffusion Forum 261-262 (January 2007): 1–24. http://dx.doi.org/10.4028/www.scientific.net/ddf.261-262.1.

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This paper aims at reviewing the possibilities of using p-n junction diodes for lifetime and defect analysis in semiconductor materials. In a first part, the theoretical basis of lifetime extraction based on p-n junction current-voltage and capacitance-voltage characteristics will be discussed. In the next parts, these methods will be applied to different cases relevant for advanced semiconductor materials and device processing. First, the impact of the initial interstitial oxygen content and thermal pre-treatment of Czochralski silicon substrates on the carrier generation and recombination li

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27

Guziewicz, M., W. Jung, R. Kruszka, et al. "Fabrication and Characterization of n-ZnO/p-SiC Heterojunction Diode." Materials Science Forum 717-720 (May 2012): 1323–26. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1323.

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ZnO as well as SiC are wide bangap materials with prospective electronic applications. Very good lattice matching of the materials allowed formation a n-ZnO/p-SiC heteroepitaxial junction. The n˗ZnO film was epitaxially grown onto the p-SiC substrate using the atomic layer deposition method. The fabricated p-n diode was studied by I-V and C-V characteristics as well as by impedance spectroscopy. The diode shows a high rectifying ratio of 107and an ideality factor of 1.21.

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28

Sato, Shinji, Fumiki Kato, Hiroshi Hozoji, Hiroshi Sato, Hiroshi Yamaguchi, and Shinsuke Harada. "High-Temperature Operating Characteristics of Inverter Using SBD-Integrated MOSFET." Materials Science Forum 1004 (July 2020): 1115–22. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.1115.

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In the conventional SiC-MOSFET, a PN junction diode is included between the source and drain. This P-N junction diode not only causes device degradation, but also generates a large reverse recovery surge voltage during high temperature operation. This surge voltage increases the electrical stress of the power converter, causing dielectric breakdown and control malfunction. We have developed a SBD integrated SiC-MOSFET. This MOSFET reduces the occurrence of reverse recovery surge voltage during high-temperature operation caused by inactivating the included PN junction diode. In this paper, we d

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29

Muttaqin, Adharul, and Irman Idris. "Implanted Layer Characterization." Jurnal EECCIS (electrics, electronics, communications, controls, informatics, systems) 1, no. 1 (2016): 16. http://dx.doi.org/10.21776/jeeccis.v1i1.351.

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<p>In modern semiconductor process technology, ion implantation has become the most important technique to introduce dopant atoms into semiconductor materials. The main advantage of ion implantation technique is its high controllability of process parameters, which influencing dopant distribution profile. This research was intended to characterize the product of ion implantation machine NV-3204.</p><p>Ion implantation characterization successfully produced and evaluated pn-junction diode characteristics. PN-junction diode was fabricated using 100 keV energy and 5x1013 cm-3 do

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30

Tan, Nai Di, Yan Lin Zhang, Xi Wu Fan, Noriko Asano, Masayuki Toda, and Katsuo Olihara. "Self-Assembly Fabrication of the Polymer p-n Junction Film." Advanced Materials Research 421 (December 2011): 188–91. http://dx.doi.org/10.4028/www.scientific.net/amr.421.188.

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The p-n junction film which consists of the conductive polymer of p type semiconductor of polyhexylthiophene (PAT-6) and n type one polyquinoline(PQ) was fabricated by self-assembly by applying novel stratified phase separation phenomenon that had been discovered previously by us. The film showed ideal characteristic I-V relationship of the diode device

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31

Гулямов, Г., У. И. Эркабоев, Н. Ю. Шарибаев та А. Г. Гулямов. "ЭДС, возникающая в p-n-переходе при воздействии сильного СВЧ поля и света". Физика и техника полупроводников 53, № 3 (2019): 396. http://dx.doi.org/10.21883/ftp.2019.03.47293.8913.

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AbstractThe effect of a strong electromagnetic field on currents and electromotive forces in a p – n junction is considered. It is shown that a p – n junction upon exposure to an electromagnetic wave becomes a source of electromotive force (emf) dependent on current. An analytical expression for the emf and internal resistance of such a source is derived. Dependences of the electromotive force and internal resistance on diode currents are obtained from the experimental current–voltage characteristic of a p – n junction placed into a strong microwave (UHF) electromagnetic field.

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32

Shevchenko, G. M., and E. V. Semyonov. "Nonlinear Inertial Diode Model Considering the Dependence of Nonequilibrium Charge Carrier Lifetime on Direct Current to Improve Simulation of Radioelectronic Equipment." Journal of the Russian Universities. Radioelectronics 25, no. 6 (2022): 70–78. http://dx.doi.org/10.32603/1993-8985-2022-25-6-70-78.

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Introduction. Adequate modeling of semiconductor devices with a p–n-junction in reverse bias represents a relevant research problem. The existing quasistatic and non-quasistatic models fail to provide a satisfactory description for the dependence of nonequilibrium charge carrier lifetime on current density. This leads to significant simulation errors (tens of percent) at pulsed broadband signals. Simulation errors arise, because the existing models regard the lifetime as a constant value.Aim. To propose and investigate an equivalent circuit of a p–n-junction considering the dependence of the l

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33

Lin, Tien-Chai, Wen-Chang Huang, Chia-Tsung Horng, and Shu-Hui Yang. "The Electrical Characteristics of ZnO :Ga/p-Si Junction Diode." MRS Proceedings 1494 (2013): 105–10. http://dx.doi.org/10.1557/opl.2013.178.

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ABSTRACTThe junction characteristics between ZnO:Ga (GZO) film and p-Si substrate are discussed in the research. For the transparent semiconductor ZnO, the element Ga is chosen to be the dopant source to produce a high quality n-type ZnO thin film. The ZnO:Ga (GZO) film shows a average transmittance is 84.7% (above 400 nm), a bandgap energy of 3.37 eV, a carrier concentration of 7.29×1013 cm−3and a resistivity of 118 Ω-cm. For the GZO/p-Si junction, it shows a junction barrier height of 0.54 eV with an ideality factor of 1.24. The capacitance-voltage measurement shows that it has a uniform rev

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34

Poklonski, N. A., A. I. Kovalev, N. I. Gorbachuk та S. V. Shpakovski. "CALCULATION OF STATIC PARAMETERS OF SILICON DIODE CONTAINING δ-LAYER OF TRIPLE-CHARGED POINT DEFECTS IN SYMMETRIC p–n-JUNCTION". Devices and Methods of Measurements 9, № 2 (2018): 130–41. http://dx.doi.org/10.21122/2220-9506-2018-9-2-130-141.

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The study of semiconductor materials and devices containing a narrow layer of impurity atoms and/or intrinsic point defects of the crystal lattice is of fundamental and practical interest. The aim of the study is to calculate the electric parameters of a symmetric silicon diode, in the flat p–n-junction of which a δ-layer of point triple-charged t-defects is formed. Such a diode is called p–t–n-diode, similarly to p–i–n-diode.Each t-defect can be in one of the three charge states (−1, 0, and +1; in the units of the elementary charge). It is assumed that at room temperature all hydrogen-like ac

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35

Kim, Ki Hyun, Ye Hwan Kang, Jung Hun Lee, Eun Sik Jung, In Ho Kang, and Chang Heon Yang. "Study of 4H-SiC Junction Barrier Schottky(JBS) Diode Using Various Junction Structures." Materials Science Forum 858 (May 2016): 733–36. http://dx.doi.org/10.4028/www.scientific.net/msf.858.733.

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In this paper, to verify implant effect characteristics variation by stripe type, grid type and circle type, the P+ implant patterning was studied. The result of two-dimensional simulation was controlled by adjusting the relative area of Schottky and p–n junction dimensions of the device, which is easily implemented during the device layout design. 4H-SiC JBSs with three types have been successfully fabricated and breakdown voltage in the range of 1694–2051 V has been achieved. The results of fabricated JBSs, show that the stripe type JBSs combine the best features of the P+ implant patterns.

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36

Zhizhen, Ye, Zhang Liqiang, Huang Jingyun, et al. "Room-temperature electroluminescence of p-ZnxMg1−xO:Na/n-ZnO p–n junction light emitting diode." Journal of Semiconductors 30, no. 8 (2009): 081001. http://dx.doi.org/10.1088/1674-4926/30/8/081001.

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37

Murakami, N., Y. Sugiyama, Y. Ohno, and M. Nagase. "Blackbody-like infrared radiation in stacked graphene P–N junction diode." Japanese Journal of Applied Physics 60, SC (2021): SCCD01. http://dx.doi.org/10.35848/1347-4065/abe208.

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38

Kim, J. B., D. Byun, S. Y. Ie, et al. "Cu-doped ZnO-based p–n hetero-junction light emitting diode." Semiconductor Science and Technology 23, no. 9 (2008): 095004. http://dx.doi.org/10.1088/0268-1242/23/9/095004.

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39

Uddin, Ashraf, and Tsutomu Uemoto. "Observation of Deep Level in p-n Junction Diode of 6H:SiC." Japanese Journal of Applied Physics 32, Part 2, No. 11B (1993): L1670—L1672. http://dx.doi.org/10.1143/jjap.32.l1670.

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40

Li, Ping, Yumei Wen, Youhai Cai, and Lian Li. "Light emitting diode fault detection using p-n junction photovoltaic effect." Review of Scientific Instruments 80, no. 5 (2009): 055108. http://dx.doi.org/10.1063/1.3137055.

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41

Rykov, A. V., S. A. Denisov, V. G. Shengurov, N. V. Baidus, and Yu N. Buzynin. "GaAs diode structures with n+-p junction on Ge/Si templates." Journal of Physics: Conference Series 1482 (March 2020): 012034. http://dx.doi.org/10.1088/1742-6596/1482/1/012034.

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42

Xie, Y. W., J. R. Sun, D. F. Guo, B. G. Shen, and X. Y. Zhang. "Backward diode behavior in oxygen-excessive manganite-titanate p-n junction." EPL (Europhysics Letters) 87, no. 5 (2009): 57006. http://dx.doi.org/10.1209/0295-5075/87/57006.

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43

Khan, W. I. "A new theoretical model for a p-n junction realistic diode." Solid-State Electronics 30, no. 12 (1987): 1221–25. http://dx.doi.org/10.1016/0038-1101(87)90045-1.

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Halimulati, Abai, Baishan, and Aimaiti. "Boundary alternating current characteristics of an ideal p-n junction diode." Acta Physica Sinica 57, no. 2 (2008): 1161. http://dx.doi.org/10.7498/aps.57.1161.

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Q. Peng, K., Z. P. Huang, and J. Zhu. "Fabrication of Large-Area Silicon Nanowire p–n Junction Diode Arrays." Advanced Materials 16, no. 1 (2004): 73–76. http://dx.doi.org/10.1002/adma.200306185.

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Egami, Akihiro, Masami Shibagaki, Akira Kumagai, et al. "Fabrication of pn-Junction Diode for N⁺ Implanted 4H-SiC(0001) Annealed by EBAS." Materials Science Forum 556-557 (September 2007): 929–32. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.929.

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We fabricate pn-junction diode on p-type 4H-SiC(0001), in which n-type region is formed by N ion implantation at room temperature (total dose: 2.4 x 1015 /cm2, thickness: 300 nm) and subsequently annealed for 5 min using electron bombardment annealing system (EBAS). The root-mean-square (RMS) surface roughness and sheet resistance (Rs) for N ion implanted region, annealed at 1900 oC is estimated to be 0.7 nm and 940 4/sq., respectively. The alloyed Ni ohmic contact to N ion implanted layer, annealed at 1900 oC, shows the contact resistance (Rc) of 8.3 x 10-5 4cm2. The forward drop voltage at 1

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Zhong, Xuying, Weichang Zhou, Yuehua Peng, et al. "Multi-layered MoS2 phototransistors as high performance photovoltaic cells and self-powered photodetectors." RSC Advances 5, no. 56 (2015): 45239–48. http://dx.doi.org/10.1039/c5ra05434f.

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Chalamnongnoot, Akkalak, Wiwat Itthikusumarn, and Wisut Titiroongruang. "Effect of Junction Shape on Diode Properties." Advanced Materials Research 717 (July 2013): 125–28. http://dx.doi.org/10.4028/www.scientific.net/amr.717.125.

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Reverse leakage current (IR) is a problem that degrade electrical characteristics and power diode effective. This paper presents the parameter extraction and analysis reverse leakage current of N-type silicon power-diodes with different geometries. All power diode were tested in 3perimeter and effective areas as follows: 0.58 cm, 0.98 cm,1.72 cm and 0.022 cm2, 0.062 cm2 0.192 cm2, respectively. We found the reverse leakage current increase with the larger junction perimeterto effective arearatio (P/A) that meaning the inverse leakage current increase with perimeter of the junction.

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Lee, M. L., J. K. Sheu, L. S. Yeh, et al. "GaN p–n junction diode formed by Si ion implantation into p-GaN." Solid-State Electronics 46, no. 12 (2002): 2179–83. http://dx.doi.org/10.1016/s0038-1101(02)00224-1.

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Rangineni, Yaswanth, Cheng Qi, Gary Goncher, Raj Solanki, and Kurt Langworthy. "Current Rectification in a Single Silicon Nanowire p–n Junction." Journal of Nanoscience and Nanotechnology 8, no. 5 (2008): 2419–21. http://dx.doi.org/10.1166/jnn.2008.186.

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Diodes within individual silicon nanowires were fabricated by doping them during growth to produce p–n junctions. Electron beam lithography was then employed to contact p- and n-doped ends of these nanowires. The current–voltage (I–V) measurements showed diode-like characteristics with a typical threshold voltage (Vt) of about 1 V and an ideality factor (n) of about 3.6 in the quasi-neutral region. The reverse bias I–V measurement showed an exponential behavior, indicating tunneling as the current leakage mechanism.

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