Journal articles: 'P-N-P Junctions'

1

Shi, Su-Fei, and Feng Wang. "Atomically thin p–n junctions." Nature Nanotechnology 9, no. 9 (2014): 664–65. http://dx.doi.org/10.1038/nnano.2014.186.

Full text

APA, Harvard, Vancouver, ISO, and other styles

2

Rossi, Enrico, Jens H. Bardarson, and Piet W. Brouwer. "Klein Tunneling in Graphene p-n-p Junctions." ECS Transactions 35, no. 3 (2019): 271–76. http://dx.doi.org/10.1149/1.3569920.

Full text

APA, Harvard, Vancouver, ISO, and other styles

3

Setare, M. R., and D. Jahani. "Electronic transmission through p–n and n–p–n junctions of graphene." Journal of Physics: Condensed Matter 22, no. 24 (2010): 245503. http://dx.doi.org/10.1088/0953-8984/22/24/245503.

Full text

APA, Harvard, Vancouver, ISO, and other styles

4

Fan, Yan, Tao Wang, Yinwei Qiu, et al. "Pure Graphene Oxide Vertical p–n Junction with Remarkable Rectification Effect." Molecules 26, no. 22 (2021): 6849. http://dx.doi.org/10.3390/molecules26226849.

Full text

Abstract:

Graphene p-n junctions have important applications in the fields of optical interconnection and low–power integrated circuits. Most current research is based on the lateral p-n junction prepared by chemical doping and other methods. Here, we report a new type of pure graphene oxide (pGO) vertical p-n junctions which do not dope any other elements but only controls the oxygen content of GO. The I–V curve of the pGO vertical p–n junction demonstrates a remarkable rectification effect. In addition, the pGO vertical p–n junction shows stability of its rectification characteristic over long-term storage for six months when sealed and stored in a PE bag. Moreover, the pGO vertical p–n junctions have obvious photoelectric response and various rectification effects with different thicknesses and an oxygen content of GO, humidity, and temperature. Hall effect test results show that rGO is an n–type semiconductor; theoretical calculations and research show that GO is generally a p–type semiconductor with a bandgap, thereby forming a p–n junction. Our work provides a method for preparing undoped GO vertical p–n junctions with advantages such as simplicity, convenience, and large–scale industrial preparation. Our work demonstrates great potential for application in electronics and highly sensitive sensors.

APA, Harvard, Vancouver, ISO, and other styles

5

Sukach, A. "Carrier transport mechanisms in InSb diffusion p-n junctions." Semiconductor Physics Quantum Electronics and Optoelectronics 17, no. 4 (2014): 325–30. http://dx.doi.org/10.15407/spqeo17.04.325.

Full text

APA, Harvard, Vancouver, ISO, and other styles

6

Lin, Chia-Hua, Ching-Han Liao, Wei-Hao Chen, Chia-Yuen Chou, and Cheng-Yi Liu. "Fabrication of p-type TiO2 and transparent p-TiO2/n-ITO p-n junctions." AIP Advances 9, no. 4 (2019): 045229. http://dx.doi.org/10.1063/1.5092782.

Full text

APA, Harvard, Vancouver, ISO, and other styles

7

Fernandes, C., A. Shik, K. Byrne, et al. "Axial p–n-junctions in nanowires." Nanotechnology 26, no. 8 (2015): 085204. http://dx.doi.org/10.1088/0957-4484/26/8/085204.

Full text

APA, Harvard, Vancouver, ISO, and other styles

8

Cao, X. A., J. R. LaRoche, F. Ren, et al. "Implanted p–n junctions in GaN." Solid-State Electronics 43, no. 7 (1999): 1235–38. http://dx.doi.org/10.1016/s0038-1101(99)00012-x.

Full text

APA, Harvard, Vancouver, ISO, and other styles

9

Frost, B. G., D. C. Joy, L. F. Allard, and E. Voelkl. "Electron holography of p-n junctions." Proceedings, annual meeting, Electron Microscopy Society of America 54 (August 11, 1996): 974–75. http://dx.doi.org/10.1017/s0424820100167330.

Full text

Abstract:

A wide holographic field of view (up to 15 μm in the Hitachi-HF2000) is achieved in a TEM by switching off the objective lens and imaging the sample by the first intermediate lens. Fig.1 shows the corresponding ray diagram for low magnification image plane off-axis holography. A coherent electron beam modulated by the sample in its amplitude and its phase is superimposed on a plane reference wave by a negatively biased Möllenstedt-type biprism.Our holograms are acquired utilizing a Hitachi HF-2000 field emission electron microscope at 200 kV. Essential for holography are a field emission gun and an electron biprism. At low magnification, the excitation of each lens must be appropriately adjusted by the free lens control mode of the microscope. The holograms are acquired by a 1024 by 1024 slow-scan CCD-camera and processed by the “Holoworks” software. The hologram fringes indicate positively and negatively charged areas in a sample by the direction of the fringe bending (Fig.2).

APA, Harvard, Vancouver, ISO, and other styles

10

Guillemoles, Jean Francois, Igor Lubomirsky, Ilan Riess, and David Cahen. "Thermodynamic Stability of p/n Junctions." Journal of Physical Chemistry 99, no. 39 (1995): 14486–93. http://dx.doi.org/10.1021/j100039a041.

Full text

APA, Harvard, Vancouver, ISO, and other styles

11

Ranjan, Pranay, Atul Kumar, Jayakumar Balakrishnan, and Ajay D. Thakur. "Graphene Oxide Based P-N Junctions." Materials Today: Proceedings 11 (2019): 830–32. http://dx.doi.org/10.1016/j.matpr.2019.03.051.

Full text

APA, Harvard, Vancouver, ISO, and other styles

12

Siddiqui, Najeeb. "Diffusive flow in p-n junctions." Physica B: Condensed Matter 193, no. 1 (1994): 77–80. http://dx.doi.org/10.1016/0921-4526(94)90054-x.

Full text

APA, Harvard, Vancouver, ISO, and other styles

13

Jonscher, Andrew K. "Dielectric response of p-n junctions." Solid-State Electronics 36, no. 8 (1993): 1121–28. http://dx.doi.org/10.1016/0038-1101(93)90191-r.

Full text

APA, Harvard, Vancouver, ISO, and other styles

14

Mannhart, J., A. Kleinsasser, J. Ströbel, and A. Baratoff. "Properties of superconducting p-n junctions." Physica C: Superconductivity 216, no. 3-4 (1993): 401–16. http://dx.doi.org/10.1016/0921-4534(93)90083-3.

Full text

APA, Harvard, Vancouver, ISO, and other styles

15

Bulyarskii, S. V., N. A. Butylkina, N. S. Grushko, A. E. Luk'yanov, M. V. Nazarov, and I. O. Stepin. "Inhomogeneities in silicon p-n-junctions." Soviet Physics Journal 34, no. 4 (1991): 339–42. http://dx.doi.org/10.1007/bf00898100.

Full text

APA, Harvard, Vancouver, ISO, and other styles

16

Goncher, G., R. Solanki, J. R. Carruthers, J. Conley, and Y. Ono. "p-n junctions in silicon nanowires." Journal of Electronic Materials 35, no. 7 (2006): 1509–12. http://dx.doi.org/10.1007/s11664-006-0140-y.

Full text

APA, Harvard, Vancouver, ISO, and other styles

17

Bernède, J. C., M. Kettaf, A. Khelil, and M. Spiesser. "p-n junctions in molybdenum ditelluride." Physica Status Solidi (a) 157, no. 1 (1996): 205–9. http://dx.doi.org/10.1002/pssa.2211570126.

Full text

APA, Harvard, Vancouver, ISO, and other styles

18

Aghamalyan, N. R., R. K. Hovsepyan, and S. I. Petrosyan. "p-type ZnO films for preparation of p-n-junctions." Journal of Contemporary Physics (Armenian Academy of Sciences) 43, no. 4 (2008): 177–82. http://dx.doi.org/10.3103/s1068337208040051.

Full text

APA, Harvard, Vancouver, ISO, and other styles

19

Sukach, A. V. "Carrier transport mechanisms in reverse biased InSb p-n junctions." Semiconductor Physics Quantum Electronics and Optoelectronics 18, no. 3 (2015): 267–71. http://dx.doi.org/10.15407/spqeo18.03.267.

Full text

APA, Harvard, Vancouver, ISO, and other styles

20

Pankratov, E. L., and E. A. Bulaeva. "An approach to decrease dimensions of field-effect transistors without p–n-junctions." International Journal of Modern Physics B 28, no. 27 (2014): 1450190. http://dx.doi.org/10.1142/s0217979214501902.

Full text

Abstract:

It has been recently shown, that manufacturing p–n-junctions, field-effect and bipolar transistors, thyristors in a multilayer structure by diffusion or ion implantation under condition of optimization of dopant and/or radiation defects leads to increasing sharpness of p–n-junctions (both single p–n-junctions and p–n-junctions, which include into their system). In this situation, one can also obtain increase of homogeneity of dopant in doped area. In this paper, we consider manufacturing a field-effect heterotransistor without p–n-junction. Optimization of technological process with using inhomogeneity of heterostructure gives us possibility to manufacture transistors to be more compact.

APA, Harvard, Vancouver, ISO, and other styles

21

Brabec, Christoph J., Thomas Nann, and Sean E. Shaheen. "Nanostructured p–n Junctions for Printable Photovoltaics." MRS Bulletin 29, no. 1 (2004): 43–47. http://dx.doi.org/10.1557/mrs2004.16.

Full text

Abstract:

AbstractBy controlling the morphology of organic and inorganic semiconductors on a molecular scale, nanoscale p–n junctions can be generated in a bulk composite. Such a composite is typically called a bulk heterojunction composite, which can be considered as one virtual semiconductor combining the electrical and optical properties of the individual components. Solar cells are one attractive application for bulk heterojunction composites. Conjugated polymers or oligomers are the favorite p-type semiconducting class for these composites, while for the n-type semiconductor, inorganic nanoparticles as well as organic molecules have been investigated. Due to the solubility of the individual components, printing techniques are used to fabricate them.

APA, Harvard, Vancouver, ISO, and other styles

22

Dmitriev, V. A., K. G. Irvine, C. H. Carter, N. I. Kuznetsov, and E. V. Kalinina. "Electric breakdown in GaN p‐n junctions." Applied Physics Letters 68, no. 2 (1996): 229–31. http://dx.doi.org/10.1063/1.116469.

Full text

APA, Harvard, Vancouver, ISO, and other styles

23

Serezhkin, Yu N., and A. A. Shesterkina. "Carrier multiplication in silicon P-N junctions." Semiconductors 37, no. 9 (2003): 1085–89. http://dx.doi.org/10.1134/1.1610124.

Full text

APA, Harvard, Vancouver, ISO, and other styles

24

Shaw, Jonathan L., Randolph E. Treece, Dinesh Patel, Carmen S. Menoni, Jim R. Smith, and J. I. Pankove. "Electron emission from GaN n–p junctions." Applied Physics Letters 81, no. 16 (2002): 3076–78. http://dx.doi.org/10.1063/1.1514824.

Full text

APA, Harvard, Vancouver, ISO, and other styles

25

Zhang, Jin, Lin Cong, Ke Zhang, et al. "Mixed-Dimensional Vertical Point p–n Junctions." ACS Nano 14, no. 3 (2020): 3181–89. http://dx.doi.org/10.1021/acsnano.9b08367.

Full text

APA, Harvard, Vancouver, ISO, and other styles

26

Pérotin, M., L. Gouskov, H. Luquet, et al. "Liquid phase epitaxial Ga0.96Al0.04Sb p/n junctions." Journal of Crystal Growth 98, no. 3 (1989): 492–98. http://dx.doi.org/10.1016/0022-0248(89)90166-8.

Full text

APA, Harvard, Vancouver, ISO, and other styles

27

Bagraev, N. T., L. E. Klyachkin, A. M. Malyarenko, and V. L. Sukhanov. "Quantum-size p-n junctions in silicon." Solid-State Electronics 34, no. 10 (1991): 1149–56. http://dx.doi.org/10.1016/0038-1101(91)90112-c.

Full text

APA, Harvard, Vancouver, ISO, and other styles

28

Kirchartz, Thomas, and David Cahen. "Minimum doping densities for p–n junctions." Nature Energy 5, no. 12 (2020): 973–75. http://dx.doi.org/10.1038/s41560-020-00708-2.

Full text

APA, Harvard, Vancouver, ISO, and other styles

29

Slobodchikov, S. V., Kh M. Salikhov, and E. V. Russu. "Longitudinal photoeffect in In0.53Ga0.47As p-n junctions." Semiconductors 31, no. 7 (1997): 733–34. http://dx.doi.org/10.1134/1.1187079.

Full text

APA, Harvard, Vancouver, ISO, and other styles

30

Virt, I. S. "Pulse characteristics of Hg0.8Cd0.2Te n +-p junctions." Technical Physics 42, no. 7 (1997): 841–44. http://dx.doi.org/10.1134/1.1258730.

Full text

APA, Harvard, Vancouver, ISO, and other styles

31

Placzek-Popko, E., E. Dudziak, L. Jedral, J. F. Kasprzak, and J. M. Pawlikowski. "Electrical properties of HgCdMnTe p−n junctions." Infrared Physics 29, no. 5 (1989): 903–5. http://dx.doi.org/10.1016/0020-0891(89)90039-0.

Full text

APA, Harvard, Vancouver, ISO, and other styles

32

Ryu, Y. R., W. J. Kim, and H. W. White. "Fabrication of homostructural ZnO p–n junctions." Journal of Crystal Growth 219, no. 4 (2000): 419–22. http://dx.doi.org/10.1016/s0022-0248(00)00731-4.

Full text

APA, Harvard, Vancouver, ISO, and other styles

33

Tessarek, Christian, Florian Schechtel, Martin Heilmann, et al. "Axial p–n Junctions in GaN Microrods." physica status solidi (b) 256, no. 4 (2018): 1800452. http://dx.doi.org/10.1002/pssb.201800452.

Full text

APA, Harvard, Vancouver, ISO, and other styles

34

Bagraev, Nikolai T., L. E. Klyachkin, A. M. Malyarenko, A. S. Shcheulin, and Alexandr I. Ryskin. "p⁺-CdB₂ - n-CdF₂ and p⁺-Si - p-CdB₂ - n-CdF₂ Diffusion Heterostructures." Defect and Diffusion Forum 237-240 (April 2005): 1060–65. http://dx.doi.org/10.4028/www.scientific.net/ddf.237-240.1060.

Full text

Abstract:

The ionic semiconductor CdF2 that is of extraordinary interest for the modern optics and optoelectronics because of the largest band-gap value, 7.8 eV, from all wide-gap semiconductors and of the n-type conductivity caused by doping with the III group elements and subsequent thermal colouring is used to prepare the ultra-shallow p+- n junctions and p+-Si - n-CdF2 heterostructures by the short-time diffusion of boron from the gas phase. The forward branches of the I-V characteristics of the quantum-size p+-n junctions and heterostructures are shown to reveal not only the CdF2 gap value, but also the CdF2 valence band structure as well thereby identifying the ballistic character of the transport of holes. The studies of the I-V characteristics under the voltage applied along the p+-n junction plane demonstrate the metal conductivity of the two-dimensional hole gas, which seems to be evidence of the formation of the p-CdB2 compounds on the n-CdF2 surface in the process of doping with boron.

APA, Harvard, Vancouver, ISO, and other styles

35

Ikebuchi, Tatsuya, Norihiro Tetsuyama, Mitsuhiro Higashihata, Hiroshi Ikenoue, Daisuke Nakamura, and Tatsuo Okada. "Hybrid Hetero p-n Junction between ZnO Microspheres and p-Type Materials." Advanced Materials Research 1119 (July 2015): 184–88. http://dx.doi.org/10.4028/www.scientific.net/amr.1119.184.

Full text

Abstract:

We report a hybrid hetero p-n junction between Zinc Oxide (ZnO) microspheres and p-GaN thin film or poly (3,4-ethylenedioxythiophene):poly (styrenesulfonate) (PEDOT:PSS). ZnO microspheres, which have high crystalline quality, were synthesized by ablating a ZnO sintered target with focused pulsed laser at high fluence. Recent investigation has demonstrated that ZnO microspheres had high optical property and laser actions in the WGM (whispering gallery mode) from the microshperes under pulsed laser irradiation. In this study, we fabricated a hybrid hetero p-n junction between ZnO microspheres and p-GaN or PEDOT:PSS, and both p-n junctions with p-GaN or PEDOT:PSS had a good rectifying characteristic. In the case of p-GaN, electroluminescence was observed under forward bias.

APA, Harvard, Vancouver, ISO, and other styles

36

Tanimura, H., H. Kawarazaki, K. Fuse, et al. "Germanium Junctions for Beyond-Si Node Using Flash Lamp Annealing (FLA)." MRS Advances 2, no. 51 (2017): 2921–26. http://dx.doi.org/10.1557/adv.2017.388.

Full text

Abstract:

ABSTRACTWe report on the formation of shallow junctions with high activation in both n+/p and p+/n Ge junctions using ion implantation and Flash Lamp Annealing (FLA). The shallowest junction depths (Xj) formed for the n+/p and p+/n junctions were 7.6 nm and 6.1 nm with sheet resistances (Rs) of 860 ohms/sq. and 704 ohms/sq., respectively. By reducing knocked-on oxygen during ion implantation in the n+/p junctions, Rs was decreased by between 5% and 15%. The lowest Rs observed was 235 ohms/sq. with a junction depth of 21.5 nm. Hall measurements clearly revealed that knocked-on oxygen degraded phosphorus activation (carrier concentration). In the p+/n Ge junctions, we show that ion implantation damage induced high boron activation. Using this technique, Rs can be reduced from 475 ohms/sq. to 349 ohms/sq. These results indicate that the potential for forming ultra-shallow n+/p and p+/n junctions in the nanometer range in Ge devices using FLA is very high, leading to realistic monolithically-integrated Ge CMOS devices that can take us beyond Si technology.

APA, Harvard, Vancouver, ISO, and other styles

37

Kong, Qiao, Woochul Lee, Minliang Lai, et al. "Phase-transition–induced p-n junction in single halide perovskite nanowire." Proceedings of the National Academy of Sciences 115, no. 36 (2018): 8889–94. http://dx.doi.org/10.1073/pnas.1806515115.

Full text

Abstract:

Semiconductor p-n junctions are fundamental building blocks for modern optical and electronic devices. The p- and n-type regions are typically created by chemical doping process. Here we show that in the new class of halide perovskite semiconductors, the p-n junctions can be readily induced through a localized thermal-driven phase transition. We demonstrate this p-n junction formation in a single-crystalline halide perovskite CsSnI3 nanowire (NW). This material undergoes a phase transition from a double-chain yellow (Y) phase to an orthorhombic black (B) phase. The formation energies of the cation and anion vacancies in these two phases are significantly different, which leads to n- and p- type electrical characteristics for Y and B phases, respectively. Interface formation between these two phases and directional interface propagation within a single NW are directly observed under cathodoluminescence (CL) microscopy. Current rectification is demonstrated for the p-n junction formed with this localized thermal-driven phase transition.

APA, Harvard, Vancouver, ISO, and other styles

38

Liu, Gang, Jairo Velasco, Wenzhong Bao, and Chun Ning Lau. "Fabrication of graphene p-n-p junctions with contactless top gates." Applied Physics Letters 92, no. 20 (2008): 203103. http://dx.doi.org/10.1063/1.2928234.

Full text

APA, Harvard, Vancouver, ISO, and other styles

39

Chen, Lan Li, Ming Ji Shi та Jia Hui Yu. "Good Quality N (a-Si)-P+(Na-Si)-P (μC-Si) Tunnel Junction for Tandem Solar Cells". Solid State Phenomena 181-182 (листопад 2011): 336–39. http://dx.doi.org/10.4028/www.scientific.net/ssp.181-182.336.

Full text

Abstract:

A new tunnel-recombination junction model was proposed to increase the recombination of n/p junctions in tandem solar cells. According to the model, we fabricated a new tunnel junction with a nanostructured amorphous silicon p+(na-Si p+) layer inserted between the n layer and the p layer. To compare with the conventional method, we fabricated another tunnel junction with an amorphous p+(a-Si p+) insertion layer. Both devices were characterized by their dark current-voltage behavior (I-V), activation energy (Ea) and quantum efficiency (QE). The result shows that the tunnel junction with a na-Si p+insertion layer has higher recombination rates with higher density of defect states of about 2.7×1019cm-3, lower resistance with activation energy of 22meV. The tunnel junction with a na-Si p+insertion layer could be easily integrated into the tandem solar cell deposition process.

APA, Harvard, Vancouver, ISO, and other styles

40

Sukach, A. V. "Electrical properties of InSb p-n junctions prepared by diffusion methods." Semiconductor Physics Quantum Electronics and Optoelectronics 19, no. 3 (2016): 295–98. http://dx.doi.org/10.15407/spqeo19.03.295.

Full text

APA, Harvard, Vancouver, ISO, and other styles

41

Zhang, Dan, Chaochao Fu, Jing Xu, et al. "NiSi/p⁺-Si(n⁺-Si)/n-Si(p-Si) Diodes With Dopant Segregation (DS): p-n or Schottky Junctions?" IEEE Transactions on Electron Devices 68, no. 6 (2021): 2886–91. http://dx.doi.org/10.1109/ted.2021.3075199.

Full text

APA, Harvard, Vancouver, ISO, and other styles

42

Matsumura, Michio, Yuichi Sakai, Satoshi Sugahara, Yoshihiro Nakato, and Hiroshi Tsubomura. "Photoelectrochemical hydrogen evolution using amorphous silicon electrodes having p-i-n or p-i-n-p-i-n junctions." Solar Energy Materials 13, no. 1 (1986): 57–64. http://dx.doi.org/10.1016/0165-1633(86)90028-6.

Full text

APA, Harvard, Vancouver, ISO, and other styles

43

Taubkin, I. I. "Photoinduced and thermal noise in semiconductor p – n junctions." Uspekhi Fizicheskih Nauk 176, no. 12 (2006): 1321. http://dx.doi.org/10.3367/ufnr.0176.200612e.1321.

Full text

APA, Harvard, Vancouver, ISO, and other styles

44

PANKRATOV, E. L. "LOCAL DOPING AND OPTIMAL ANNEALING OF A MESH MULTILAYER STRUCTURE TO DECREASE THE SPATIAL DIMENSIONS OF INTEGRATED p–n-JUNCTIONS." Nano 04, no. 05 (2009): 303–23. http://dx.doi.org/10.1142/s179329200900185x.

Full text

Abstract:

It has been recently shown that inhomogeneity of a multilayer structure and optimization of annealing time give us the possibility to decrease the depth of p–n-junctions, which were produced in the structures. The additional to the considered effect is increasing of homogeneity of dopant distribution in enriched by the dopant area of p–n-junction. In the present paper analysis of dopant redistribution in a multilayer structures during production a series of p–n-junctions, which was produced in the multilayer structures, has been done. We consider an approach to increase the sharpness of both diffused-junction and implanted-junction rectifiers, which comprise in a bipolar transistor or thyristor, and increasing of homogeneity of dopants distributions in enriched by the dopants areas of p–n-junctions. The approach gives us possibility to increase the degree of integration of p–n-junctions, which was produced as elements of integrated circuits. Optimization of annealing time for simultaneously increasing of the sharpness and homogeneity has been done.

APA, Harvard, Vancouver, ISO, and other styles

45

Zhou, Xingfei. "Valley splitting and anomalous Klein tunneling in borophane-based n-p and n-p-n junctions." Physics Letters A 384, no. 25 (2020): 126612. http://dx.doi.org/10.1016/j.physleta.2020.126612.

Full text

APA, Harvard, Vancouver, ISO, and other styles

46

Sejil, Selsabil, Mihai Lazar, Frédéric Cayrel, et al. "Optimization of VLS Growth Process for 4H-SiC P/N Junctions." Materials Science Forum 858 (May 2016): 205–8. http://dx.doi.org/10.4028/www.scientific.net/msf.858.205.

Full text

Abstract:

P/N junctions have been fabricated with N+ commercial 4H-SiC substrate on which Vapor-Liquid-Solid (VLS) selective epitaxy was used to create a localized p-type doping. The influence of the carrier gas nature (argon or hydrogen) has been investigated in terms of quality of the growth morphology, deposit thickness and electrical behavior of the P/N junction. Distinct results have been observed with a clear improvement when using VLS selective epitaxy under hydrogen.

APA, Harvard, Vancouver, ISO, and other styles

47

Indykiewicz, K., C. Bray, C. Consejo, et al. "Current-induced enhancement of photo-response in graphene THz radiation detectors." AIP Advances 12, no. 11 (2022): 115009. http://dx.doi.org/10.1063/5.0117818.

Full text

Abstract:

Thermoelectric readout in a graphene terahertz (THz) radiation detector requires a p- n junction across the graphene channel. Even without an intentional p- n junction, two latent junctions can exist in the vicinity of the electrodes/antennas through the proximity to the metal. In a symmetrical structure, these junctions are connected back-to-back and therefore counterbalance each other with regard to rectification of the ac signal. Because of the Peltier effect, a small dc current results in additional heating in one and cooling in another p- n junction, thereby breaking the symmetry. The p- n junctions then no longer cancel, resulting in a greatly enhanced rectified signal. This allows simplifying the design and controlling the sensitivity of THz radiation detectors.

APA, Harvard, Vancouver, ISO, and other styles

48

Vergeles, P. S., E. B. Yakimov, A. Y. Polyakov, et al. "Parasitic p–n junctions formed at V-pit defects in p-GaN." Journal of Applied Physics 129, no. 15 (2021): 155702. http://dx.doi.org/10.1063/5.0047742.

Full text

APA, Harvard, Vancouver, ISO, and other styles

49

Gulyamov, G., A. G. Gulyamov, and U. I. Erkaboev. "Thermal Stimulation of Photocurrent in p–n Junctions." Applied Solar Energy 54, no. 5 (2018): 338–40. http://dx.doi.org/10.3103/s0003701x18050079.

Full text

APA, Harvard, Vancouver, ISO, and other styles

50

Ide, Takashi, Seiichi Hiroshima, and Keiji Shimizu. "Imaging p-n Junctions by Scanning Auger Microscopy." Japanese Journal of Applied Physics 37, Part 2, No. 8B (1998): L963—L965. http://dx.doi.org/10.1143/jjap.37.l963.

Full text

APA, Harvard, Vancouver, ISO, and other styles

Journal articles on the topic 'P-N-P Junctions'

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles