Relevant bibliographies by topics / P-type GaAs

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Book chapters
  4. Conference papers
  5. Reports

Academic literature on the topic 'P-type GaAs'

Author: Grafiati
Published: 4 June 2021
Last updated: 1 February 2022

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Journal articles on the topic "P-type GaAs"

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Fuyuki, Takuma, Shota Kashiyama, Kunishige Oe, and Masahiro Yoshimoto. "Interface States in p-Type GaAs/GaAs1-xBixHeterostructure." Japanese Journal of Applied Physics 51, no. 11S (November 1, 2012): 11PC02. http://dx.doi.org/10.7567/jjap.51.11pc02.

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Stichtenoth, D., K. Wegener, C. Gutsche, I. Regolin, F. J. Tegude, W. Prost, M. Seibt, and C. Ronning. "P-type doping of GaAs nanowires." Applied Physics Letters 92, no. 16 (April 21, 2008): 163107. http://dx.doi.org/10.1063/1.2912129.

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Xie, Zhijian, and S. A. Lyon. "Ballistic transport in p-type GaAs." Applied Physics Letters 75, no. 14 (October 4, 1999): 2085–87. http://dx.doi.org/10.1063/1.124924.

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Nathan, M. I., W. P. Dumke, K. Wrenner, S. Tiwari, S. L. Wright, and K. A. Jenkins. "Electron mobility in p‐type GaAs." Applied Physics Letters 52, no. 8 (February 22, 1988): 654–56. http://dx.doi.org/10.1063/1.99395.

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Moutonnet, D. "Photochemical pattern on p-type GaAs." Materials Letters 6, no. 1-2 (November 1987): 34–36. http://dx.doi.org/10.1016/0167-577x(87)90097-8.

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Dong, Boqun, Andrei Afanasev, Rolland Johnson, and Mona Zaghloul. "Enhancement of Photoemission on p-Type GaAs Using Surface Acoustic Waves." Sensors 20, no. 8 (April 24, 2020): 2419. http://dx.doi.org/10.3390/s20082419.

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We demonstrate that photoemission properties of p-type GaAs can be altered by surface acoustic waves (SAWs) generated on the GaAs surface due to dynamical piezoelectric fields of SAWs. Multiphysics simulations indicate that charge-carrier recombination is greatly reduced, and electron effective lifetime in p-doped GaAs may increase by a factor of 10× to 20×. It implies a significant increase, by a factor of 2× to 3×, of quantum efficiency (QE) for GaAs photoemission applications, like GaAs photocathodes. Conditions of different SAW wavelengths, swept SAW intensities, and varied incident photon
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Bagraev, Nikolai T. "Metastable Surface Defects in p-Type GaAs." Materials Science Forum 143-147 (October 1993): 543–48. http://dx.doi.org/10.4028/www.scientific.net/msf.143-147.543.

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Ito, Hiroshi, and Tadao Ishibashi. "Surface Recombination Velocity in p-Type GaAs." Japanese Journal of Applied Physics 33, Part 1, No.1A (January 15, 1994): 88–89. http://dx.doi.org/10.1143/jjap.33.88.

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Lodha, Saurabh, and David B. Janes. "Metal/molecule/p-type GaAs heterostructure devices." Journal of Applied Physics 100, no. 2 (July 15, 2006): 024503. http://dx.doi.org/10.1063/1.2210569.

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Kidalov, V. V. "Optical properties of p-type porous GaAs." Semiconductor physics, quantum electronics and optoelectronics 8, no. 4 (December 15, 2005): 118–20. http://dx.doi.org/10.15407/spqeo8.04.118.

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Dissertations / Theses on the topic "P-type GaAs"

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Klochan, Oleh V. Physics Faculty of Science UNSW. "Ballistic transport in one-dimensional p-type GaAs devices." Awarded by:University of New South Wales, 2007. http://handle.unsw.edu.au/1959.4/35186.

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In this thesis we study GaAs one dimensional hole systems with strong spin-orbit interaction effects. The primary focus is the Zeeman splitting of 1D subbands in the two orthogonal in-plane magnetic field directions. We study two types of 1D hole systems based on different (311)A grown heterostructures: a modulation doped GaAs/AlGaAs square quantum well and an undoped induced GaAs/AlGaAs triangular quantum well. The results from the modulation doped 1D wire show enhanced anisotropy of the effective Lande g-factor for the two in-plane field directions (parallel and perpendicular to the wire), c
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Grbić, Boris. "Hole transport and spin-orbit coupling in p-type GaAs nanostructures." kostenfrei, 2007. http://e-collection.ethbib.ethz.ch/view/eth:29710.

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Clarke, Warrick Robin Physics Faculty of Science UNSW. "Quantum interaction phenomena in p-GaAs microelectronic devices." Awarded by:University of New South Wales. School of Physics, 2006. http://handle.unsw.edu.au/1959.4/32259.

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In this dissertation, we study properties of quantum interaction phenomena in two-dimensional (2D) and one-dimensional (1D) electronic systems in p-GaAs micro- and nano-scale devices. We present low-temperature magneto-transport data from three forms of low-dimensional systems 1) 2D hole systems: in order to study interaction contributions to the metallic behavior of 2D systems 2) Bilayer hole systems: in order to study the many body, bilayer quantum Hall state at nu = 1 3) 1D hole systems: for the study of the anomalous conductance plateau G = 0.7 ???? 2e2/h The work is divided into five ex
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Saha, Uttam Kumar. "Photoluminescence and kinetic of MOCVD grown P-type GaAs:Nd and Nd-implanted semi-insulating GaAs." Ohio University / OhioLINK, 1996. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1178044230.

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Liu, Gordon Gang. "Electrochemical behaviour of gallium arsenide." Thesis, University of British Columbia, 1991. http://hdl.handle.net/2429/30080.

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Polarization behaviours of copper diffused p-type GaAs was studied in 1. 0M NaCl and 1. 0M NaNO₃ by means of pitting scan and linear sweep potentiodynamic polarization techniques. The thermodynamic potential-pH diagram of the GaAs-H₂O system was constructed. The observed electrode behaviours of GaAs were compared and correlated to the potential-pH diagram. Freely corroding potential, passivation behaviour and pitting potential were examined as a function of a number of factors. These included the effects of different annealing and polishing pretreatments, the bulk solution pH and polarization
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Rahbi, Rania. "Etude de la diffusion de l'hydrogène et des interactions hydrogène accepteur dans gaas de type p." Paris 7, 1991. http://www.theses.fr/1991PA077075.

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L'exposition de semi-conducteurs gaas de type p à un plasma radio fréquence d'hydrogène entraîne une diffusion d'hydrogène dans le matériau. L'analyse qualitative des profils de diffusion du deutérium conduit à la conclusion que l'hydrogène diffuse relativement librement dans les matériaux peu dopés et interagit fortement avec les accepteurs lorsque le taux de dopage est élevé. Ceci est valable aussi bien pour les accepteurs de la colonne 2 que pour ceux de la colonne 4. La diffusion de l'hydrogène dans les matériaux gaas dopés zinc, silicium et germanium entraîne une diminution de la concentr
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JOURDAN, NICOLAS. "Etude des dopants de type p pour l'epitaxie par jets moleculaires de transistors bipolaires a heterostructure gaas/gaa1as." Paris 7, 1991. http://www.theses.fr/1991PA077047.

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Ce travail presente l'etude des dopants de type-p (be,c) pour l'epitaxie par jets moleculaires afin de fabriquer des transistors bipolaires a heterostructure gaas/ga#1#-#xal#xas tres performants. En ce qui concerne le dopant be, une etude des differents mecanismes de redistribution de l'impurete a ete entreprise. L'optimisation des parametres de croissance (temperature de croissance, rapport des flux v/iii, vitesse de croissance) a permis: 1) une augmentation de la longueur de diffusion des porteurs minoritaires dans la base associee a une amelioration de la qualite de la couche et 2) une impo
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Benarfa, Houria. "Proprietes de photoluminescence de gaas : contribution a l'etude de gaas heteroepitaxie sur (ca,sr)f2 par la technique des jets moleculaires." Toulouse, INSA, 1986. http://www.theses.fr/1986ISAT0019.

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ANALYSE DE LA PHOTOLUMINESCENCE DE STRUCTURES GaAs/(Ca,Sr))F2/GaAs, A FLUORURE ACCORDE EN MAILLE AU GAAS; INFLUENCE DES PARAMETRES DE CROISSANCE ET DE LA DISTANCE A L'INTERFACE. COMPARAISON DES PERFORMANCES DE SEMICONDUCTEUR HETEROEPITAXIE A CELLES DE GAAS EPITAXIE; ETUDE DE COUCHES DE GAAS EPITAXIE SUR CAF2 MASSIF
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Pant, Bharat Raj. "A Comparative Study on P-type Nickel Oxide and N-type Zinc Oxide for Gas Sensor Applications." University of Toledo / OhioLINK, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1525473245395728.

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Madhavi, S. "Carrier Mobility And High Field Transport in Modulation Doped p-Type Ge/Si1-xGex And n-Type Si/Si1-xGex Heterostructures." Thesis, Indian Institute of Science, 2000. http://hdl.handle.net/2005/294.

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Modulation doped heterostructures have revolutionized the operation of field effect devices by increasing the speed of operation. One of the factors that affects the speed of operation of these devices is the mobility of the carriers, which is intrinsic to the material used. Mobility of electrons in silicon based devices has improved drastically over the years, reaching as high as 50.000cm2/Vs at 4.2K and 2600cm2/Vs at room temperature. However, the mobility of holes in p-type silicon devices still remains comparatively lesser than the electron mobility because of large effective masses and co
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Book chapters on the topic "P-type GaAs"

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Heuring, W., E. Bangert, G. Landwehr, G. Weimann, and W. Schlapp. "p-Type GaAs-(GaAI)As Heterostructures in Tilted Magnetic Fields: Theory and Experiments." In High Magnetic Fields in Semiconductor Physics II, 190–93. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-83810-1_30.

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Landwehr, G. "Transport Properties of p-Type GaAs-(GaAl)As Heterojunctions in High Magnetic Fields." In Springer Series in Solid-State Sciences, 295–303. Berlin, Heidelberg: Springer Berlin Heidelberg, 1987. http://dx.doi.org/10.1007/978-3-642-83114-0_44.

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Perraud, S., C. David, and Z. Z. Wang. "Nanomeasure of Esaki Negative Resistance on p-Type GaAs(110) Surfaces." In Solid State Phenomena, 835–38. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/3-908451-30-2.835.

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Ossau, W., T. L. Kuhn, E. Bangert, and G. Weimann. "The H-Band Luminescence of p-Type GaAs-(GaAl)As Heterostructures in High Magnetic Fields." In High Magnetic Fields in Semiconductor Physics II, 268–77. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-83810-1_41.

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Reményi, G., G. Landwehr, W. Heuring, G. Weimann, and W. Schlapp. "Fractional Quantum Hall Effect of p-Type GaAs-(GaAl)As Heterostructures in the Millikelvin Range." In Springer Series in Solid-State Sciences, 166–72. Berlin, Heidelberg: Springer Berlin Heidelberg, 1987. http://dx.doi.org/10.1007/978-3-642-83114-0_25.

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Iwasa, Y., N. Miura, S. Takeyama, and T. Ando. "Hole Cyclotron Resonance in p-Type GaAs-AlGaAs Superlattices in High Magnetic Fields." In Springer Series in Solid-State Sciences, 274–77. Berlin, Heidelberg: Springer Berlin Heidelberg, 1987. http://dx.doi.org/10.1007/978-3-642-83114-0_40.

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Lohner, A., M. Woerner, T. Elsaesser, and W. Kaiser. "Hot Hole Capture by Shallow Acceptors in p-Type GaAs Studied by Picosecond Infrared Spectroscopy." In Ultrafast Phenomena VIII, 416–17. Berlin, Heidelberg: Springer Berlin Heidelberg, 1993. http://dx.doi.org/10.1007/978-3-642-84910-7_131.

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Ono, M., N. Nishioka, M. Morifuji, and C. Hamaguchi. "Temperature Dependence of Resonant Tunneling Characteristics in a p-type GaAs/AlAs Double-Barrier Structure." In Springer Proceedings in Physics, 835–36. Berlin, Heidelberg: Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-59484-7_396.

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Szmulowicz, Frank, Gail J. Brown, William C. Mitchel, H. C. Liu, L. Li, M. Buchanan, Z. R. Wasilewski, and C. H. Lin. "Calculation and Photoresponse Measurements of the Long-Wavelength IR Absorption in P-Type GaAs/AlGaAs Quantum Wells and Type-II InAs/InGaSb Superlattices." In Intersubband Transitions in Quantum Wells: Physics and Devices, 76–83. Boston, MA: Springer US, 1998. http://dx.doi.org/10.1007/978-1-4615-5759-3_11.

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Mal, Indranil, Asish Hazra, D. P. Samajdar, and T. D. Das. "Investigation of Electronic and Optical Properties of GaSbBi/GaAs Type-II Quantum Wells Using 14-Band k · p Hamiltonian." In Springer Proceedings in Physics, 1013–20. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-319-97604-4_155.

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Conference papers on the topic "P-type GaAs"

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Barnes, Peter A., Joongseo Park, and John B. Crofton. "Nonalloyed contacts to p-type GaAs." In OE/LASE'93: Optics, Electro-Optics, & Laser Applications in Science& Engineering, edited by R. Aaron Falk. SPIE, 1993. http://dx.doi.org/10.1117/12.146540.

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Szmulowicz, Frank, and Gail J. Brown. "Whither P-type GaAs/AlGaAs QWIP?" In Symposium on Integrated Optoelectronic Devices, edited by Gail J. Brown and Manijeh Razeghi. SPIE, 2002. http://dx.doi.org/10.1117/12.467659.

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Cifuentes, N., H. Limborco, M. V. B. Moreira, G. M. Ribeiro, A. G. de Oliveira, M. I. N. da Silva, J. C. Gonzalez, Daniel B. Roa, Emilson R. Viana, and A. Abelenda. "Electronic transport in p-type doped GaAs nanowires." In 2016 31st Symposium on Microelectronics Technology and Devices (SBMicro). IEEE, 2016. http://dx.doi.org/10.1109/sbmicro.2016.7731333.

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Xu, Zhiwei, Jury V. Vandyshev, Gary W. Wicks, Philippe M. Fauchet, Mike J. Shaw, Milan Jaros, Bruce A. Richman, Chris W. Rella, and H. Alan Schwettman. "Second harmonic generation in p-type GaAs quantum wells." In OE/LASE '94, edited by Gottfried H. Doehler and Emil S. Koteles. SPIE, 1994. http://dx.doi.org/10.1117/12.175709.

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Majid, A. "Deep levels in Ruthenium doped p-type MOCVD GaAs." In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27. AIP, 2005. http://dx.doi.org/10.1063/1.1994034.

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Missaoui, A., L. Beji, and A. Bouazizi. "Optical Study of Porous p-type GaAs by Spectroscopic Ellipsometry." In 2nd International Conference on Transparent Optical Networks "Mediterranean Winter" 2008. ICTON-MW'08. IEEE, 2008. http://dx.doi.org/10.1109/ictonmw.2008.4773114.

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Boland, Jessica L., A. Casadei, G. Tutuncouglu, F. Matteini, C. Davies, F. Gaveen, F. Amaduzzi, et al. "Increased photoconductivity lifetimes in GaAs nanowires via n-type and p-type shell doping." In 2016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz). IEEE, 2016. http://dx.doi.org/10.1109/irmmw-thz.2016.7758574.

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Cho, Taehee, Hyungsuk Kim, Songcheol Hong, and Youngse Kwon. "Superior Detectivity of (111) GaAs/AlGaAs p-Type QW Infrared Photodetector." In 1995 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1995. http://dx.doi.org/10.7567/ssdm.1995.pd-5-6.

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BOGDANOV, E. V., A. A. ILIEVSKY, N. YA. MININA, A. M. SAVIN, O. P. HANSEN, C. B. SORENSEN, and W. KRAAK. "NEGATIVE AND PERSISTENT POSITIVE PHOTOCONDUCTIVITY IN P-TYPE Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As." In Reviews and Short Notes to NANOMEETING-2001. WORLD SCIENTIFIC, 2001. http://dx.doi.org/10.1142/9789812810076_0019.

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Grbić, B., R. Leturcq, T. Ihn, K. Ensslin, D. Reuter, and A. D. Wieck. "Hole transport in p-type GaAs quantum dots and point contacts." In PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006. AIP, 2007. http://dx.doi.org/10.1063/1.2730121.

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Reports on the topic "P-type GaAs"

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McCormick, Larry D. Scanning Tunneling Microscopy Etching of Micrometer Level Features on P-Type GaAs. Fort Belvoir, VA: Defense Technical Information Center, March 1989. http://dx.doi.org/10.21236/ada209216.

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Tracy, Lisa A., John L. Reno, and Terry W. Hargett. Fabrication and Characterization of a Single Hole Transistor in p-type GaAs/AlGaAs Heterostructures. Office of Scientific and Technical Information (OSTI), September 2015. http://dx.doi.org/10.2172/1221866.

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Chu, Jerome T., and Sheng S. Li. Investigation of Normal Incidence High Performance P-Type Strained Layer InGaAs/AlGaAs and GaAs/AlGaAs Quantum Well Infrared Photodetectors. Fort Belvoir, VA: Defense Technical Information Center, June 1997. http://dx.doi.org/10.21236/ada325634.

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Dutra, Lauren M., James Nonnemaker, Nathaniel Taylor, Ashley Feld, Brian Bradfield, John Holloway, Edward (Chip) Hill, and Annice Kim. Visual Attention to Tobacco-Related Stimuli in a 3D Virtual Store. RTI Press, May 2020. http://dx.doi.org/10.3768/rtipress.2020.rr.0036.2005.

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We used eye tracking to measure visual attention to tobacco products and pro- and anti-tobacco advertisements (pro-ads and anti-ads) during a shopping task in a three-dimensional virtual convenience store. We used eye-tracking hardware to track the percentage of fixations (number of times the eye was essentially stationary; F) and dwell time (time spent looking at an object; DT) for several categories of objects and ads for 30 adult current cigarette smokers. We used Wald F-tests to compare fixations and dwell time across categories, adjusting comparisons of ads by the number of each type of a
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Awschalom, M., and R. K. T. Haken. Dependence of charge collection distributions and dose on the gas type filling the ionization chamber for a p(66)Be(49) clinical neutron beam. Office of Scientific and Technical Information (OSTI), January 1985. http://dx.doi.org/10.2172/5345986.

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Awschalom, Miguel, and R. Ten Haken. Dependence of Charge Collection Distributions and Dose of the Gas Type Filling the Ionization Chamber for a p(66)-Be(49) Clinical Neutron Beam. Office of Scientific and Technical Information (OSTI), January 1985. http://dx.doi.org/10.2172/1156255.

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