Relevant bibliographies by topics / Passive Q-switch

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  1. Journal articles
  2. Dissertations / Theses
  3. Book chapters
  4. Conference papers
  5. Reports

Academic literature on the topic 'Passive Q-switch'

Author: Grafiati
Published: 4 June 2021
Last updated: 5 February 2022

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Journal articles on the topic "Passive Q-switch"

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Fedin, A. V., A. V. Rulev, and T. T. Basiev. "Dynamic-cavity passive Q-switch Nd-glass laser." Technical Physics Letters 26, no. 7 (July 2000): 576–78. http://dx.doi.org/10.1134/1.1262918.

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Chen, Junewen, Hon-Fai Yau, Hai-Pei Liu, Tzu-Chiang Chen, Chiao-Chia Cheng, and Fa-Min Liu. "Passive Q-switch and mode-locking modulators for lasers." Optics & Laser Technology 32, no. 4 (June 2000): 215–19. http://dx.doi.org/10.1016/s0030-3992(00)00029-3.

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Yong, Wan, Zhu Da-Yong, Zeng Qin-Yong, Zhang Zhi-Yong, Zhang Jing, and Han Kai. "Brewster-oriented passive Q-switch intracavity optical parametric oscillator." Chinese Physics 14, no. 4 (March 17, 2005): 714–19. http://dx.doi.org/10.1088/1009-1963/14/4/013.

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Chen, Junewen, and Jun-Nan Chen. "Five Simultaneously Q-Switch Mode-Locked Passive Laser Modulators." Optical Review 13, no. 6 (November 2006): 427–35. http://dx.doi.org/10.1007/s10043-006-0427-5.

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Borisov, Vasily Ivanovich, Elena Valeryevna Timoschenko, and Yuri Vladimirovich Yurevich. "PULSE LASING DUE TO RESONANT FILM PASSIVE Q-SWITCH." Вестник Белорусско-Российского университета, no. 3 (2014): 96–104. http://dx.doi.org/10.53078/20778481_2014_3_96.

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Kuo, Yen‐Kuang, Yang Yang, and Milton Birnbaum. "Cr4+:Gd3Sc2Ga3O12 passive Q‐switch for the Cr3+:LiCaAlF6 laser." Applied Physics Letters 64, no. 18 (May 2, 1994): 2329–31. http://dx.doi.org/10.1063/1.111630.

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Chaika, M. А., A. G. Doroshenko, S. V. Parkhomenko, E. G. Chernomorets, P. V. Mateichenko, and R. P. Yavetskiy. "Synthesis of optical Me2+,Cr4+:YAG ceramics for passive Q-switch." Scientific research on refractories and technical ceramics 117 (July 11, 2017): 196–211. http://dx.doi.org/10.35857/2663-3566.117.19.

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The purpose of this work is determines of formation patterns of opti- cal ceramics Mg2+,Cr4+:YAG and Ca2+,Cr4+:YAG as model objects promising for use as a passive Q-switch. Optical ceramics Ca2+,Cr4+:YAG and Mg2+,Cr4+:YAG was synthesized by solid-phase reaction sintering in vacuum. The influence of calcium, magnesium and chromium ion concentrations on the structure and the optical properties of ceramics Mg2+,Cr4+:YAG have been investigated. The optimized chromium concentration 0.5 at. % allows to obtain Mg2+,Cr3+:YAG ceramics with optical transmission of about 81 % at λ = 1064 nm after vacuum sintering and the absorption coefficient of about 1.4 cm–1 after air annealing. The optimized calcium concentration 0.5 at. % allows to obtain Са2+,Cr3+:YAG ceramics with an optical transmission of about 80 % at λ = 1064 nm after vacuum sintering and the absorption coefficient of about 2.4 cm–1 after air annealing.
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Malyarevich, A. M., I. A. Denisov, K. V. Yumashev, V. P. Mikhailov, R. S. Conroy, and B. D. Sinclair. "V:YAG - a new passive Q-switch for diode-pumped solid-state lasers." Applied Physics B: Lasers and Optics 67, no. 5 (November 1, 1998): 555–58. http://dx.doi.org/10.1007/s003400050544.

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Wu, Yu Song, Jiang Li, Yu Bai Pan, Jing Kun Guo, and Qian Liu. "Refine Yttria Powder and Fabrication of Transparent Yb,Cr:YAG Ceramics." Advanced Materials Research 15-17 (February 2006): 246–50. http://dx.doi.org/10.4028/www.scientific.net/amr.15-17.246.

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Commercial Y2O3 powders were subjected to high energy ball milling in a planetary ball mill using high purity alumina balls and vial. The refined Y2O3 power ,with commercial high-purity Al2O3, Cr2O3 and Yb2O3 powders, were used as raw materials. Transparent ytterbium and chromium codoped yttrium aluminum garnet (Yb,Cr:YAG) ceramics were fabricated by a solid-state reaction method. The Yb,Cr:YAG ceramics exhibit a pore free structure and the average grain size is about 10 micron. The strong absorptions at 940 and 968 nm of Yb3+ are suitable for InGaAs diode laser pumping, and there is an absorption band at 1030 nm, which is suitable for passive Q-switch laser output at 1030 nm. Transparent Yb,Cr:YAG ceramics may be a potential material for compact, efficient, high-stability diode-laser-pumped passive Q-switched solid-state lasers.
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Ma, Mengyuan, Wen Wen, Yao Zhang, Chenxi Dou, Junli Wang, Liming Xie, Ching-Hwa Ho, and Zhiyi Wei. "Few-layer ReS2(1−x)Se2x nanoflakes for noise-like pulse generation in a mode-locked ytterbium-doped fiber laser." Journal of Materials Chemistry C 7, no. 23 (2019): 6900–6904. http://dx.doi.org/10.1039/c9tc00625g.

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We investigated the ternary ReS2(1−x)Se2x alloys and fabricated few-layer ReS1.02Se0.98 nanoflakes to realize passive Q-switch and noise-like pulses operating at 1 μm wavelength.
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Dissertations / Theses on the topic "Passive Q-switch"

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Aubourg, Adrien. "Sources laser à fibre cristalline YAG dopée erbium et pompée par diode." Thesis, Palaiseau, Institut d'optique théorique et appliquée, 2014. http://www.theses.fr/2014IOTA0008/document.

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Parmi les nombreuses applications des sources laser, certaines nécessitent une propagation du faisceau dans l'atmosphère sur plusieurs kilomètres : télémétrie, désignation, ou encore imagerie active. Pour éviter tout risque oculaire tout en proposant de plus grandes portées, ces applications doivent faire appel à des sources laser émettant une longueur d'onde dans la gamme à sécurité oculaire autour d'un minimum local d'absorption de l'atmosphère (1550-1650 nm). De telles sources existent déjà commercialement, mais ne répondent pas aux exigences militaires de compacité, de consommation électrique, de performance et de fonctionnement sur une large gamme de température (-40°C/+60°C).Mes travaux de thèse tentent d'apporter une réponse à l'ensemble de ces exigences. Avec l'aide des partenaires industriels Fibercryst et Cilas, ils portent sur la réalisation de sources laser compactes et efficaces à fibre cristalline Er3+:YAG directement pompée par une diode laser pour des applications militaires.A l'aide d'un algorithme de simulation d'un laser Er3+:YAG déclenché passivement élaboré et affiné durant la thèse, plusieurs sources sont réalisées expérimentalement. L'étude autour des absorbants saturables pour le déclenchement passif a permis une amélioration notable des caractéristiques du faisceau.Ces recherches, dont les résultats peuvent déjà présenter un certain intérêt commercial, ouvrent la voie vers de nouvelles techniques et architectures autour des sources laser à cristaux dopés aux ions erbium pour la conception de futurs prototypes plus performants
Among the several applications of laser sources, some requires kilometers range propagation in the atmosphere : telemetry, guidance system or active imagery. High pulse energy improves the range of the system, but may cause permanent blindness to an observer's eyes. Hence, these applications must use laser beam which wavelength are located in the eye-safe region, ideally at the local minimum of the atmosphere absorption (1550-1650 nm). Such laser sources are already commercially available, but are not suited for the demanding military needs : compacity, electrical consumption, performance and large operating temperature range (-40°C/+60°C).My work aims to develop a laser source filling these specifications. Thanks to the collaboration with the industrial partners Fibercryst and Cilas, it focuses on the design of a compact, efficient, directly diode-pumped Er3+:YAG single cristal fiber laser for military applications.With a homemade numerical simulation of a passively Q-switched Er3+:YAG laser source, many laser emitters are experimentally designed and compared. Further studies around saturable absorbers allowed sensible improvements of the output pulse energy.This work, whose results may already be commercially interesting, may lead to new technics and architectures of erbium doped solid-state laser for better prototypes
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Phelps, Charles Dustin. "Diode-Pumped, 2-Micron, Q-Switched Tm:YAG Microchip Laser." University of Dayton / OhioLINK, 2011. http://rave.ohiolink.edu/etdc/view?acc_num=dayton1304695817.

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Lu, Min. "Performance of continuously pumped, passively Q-switched, solid state lasers." Thesis, University of Sussex, 2011. http://sro.sussex.ac.uk/id/eprint/6953/.

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This thesis studies the relationship between the pairs of resonator output coupling and intra-cavity absorber initial transmission, and the FWHM (full width at half maximum) pulse duration of a continuously pumped passively Q-switched solidstate laser, when the output energy is pre-determined. Depending on the magnitude of the pumping power, three different rate equation models are used to evaluate the required output coupler reflectivity and absorber initial-transmission pair for the corresponding FWHM pulse duration. The energy transfer kinetics of the passively Q-switched laser decides the required pumping power; and the pair of output coupler reflectivity absorber transmission pair, determine the build-up time of Q-switching and the repetition rate of the laser system. Hence, the forms of the models are controlled by two conditions: 1) the build-up time of Q-switching; and 2) the recovery time of the absorber. When the build-up time of Q-switching is relatively short, but the recovery time of the absorber is long, Model I is based on the simplified laser rate equations. It is used to evaluate the output coupler reflectivity and absorber initialtransmission pair, which satisfies the pre-determined output energy and FWHM pulse duration. Model II is set up to study the case when both the build-up time of Q-switching and the recovery time of the absorber are long. In Model II, the laser rate equations are solved using the Runge-Kutta method. Model III simulates the case when the recovery time of the absorber is short. To validate the models, the simulation results of practical passively Q-switched laser systems are compared with experimental results reported in the literature. The agreement of the simulation results with reported experimental results demonstrates the importance of the boundary conditions for the different cases, and verifies the soundness of the models. Generalizing the simulation results, obtained from different passively Q-switched laser systems with different pumping power and different pre-determined output energy, yields general conclusions which permit a designer to select the correct parameters for a desired laser performance.
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Serres, Serres Josep Maria. "Continuous-wave and passively Q-switched solid-state microchip lasers in the near-infrared." Doctoral thesis, Universitat Rovira i Virgili, 2017. http://hdl.handle.net/10803/460758.

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Aquest treball tracta de la caracterització de làsers compactes d'estat sòlid, amb un primer enfocament, l'estudi del concepte microxip aplicat al làser en diversos hostes cristal·lins dopats amb terres rares. Es reporta els resultats sobre l'estudi de l'efecte de thermal lens, necessari per a l'obtenció de làser amb aquesta configuració, així com pel funcionament làser amb continu i polsat utilitzant la tècnica Q-switch. En els experiments, el concepte microxip es defineix com una cavitat làser quasi monolítica. Aquest concepte s'estudia per a diferents emissions de làser a ~1.06 m d'ions Yb3+ i Nd3+, a ~1,3 m de Nd3+, a ~1,95 m de Tm3+ hi ha ~2.05 m del Ho3+. En el règim d'ona contínua s'examina detalladament per als ions de lantànids trivalents esmentats en diversos hostes cristal·lins amb l'objectiu de comparar el potencial de cada material. En aquest treball, es demostren eficiències molt properes al límit teòric. D'altra banda, també es presenten làsers polsats d'estat sòlid amb la configuració microxip amb diversos absorbidors saturables. Amb aquest propòsit, s'utilitzen com a absorbidors saturables nous nanomaterials com el MoS2, nanoestructures de carboni (SWCNT, el grafè d'una i de diverses capes) i un SESA. A més, el més convencional Cr:YAG (~1.06 m) i el Cr:ZnS (~1.9 m) s'examinen per comparar els seus rendiments.
Este trabajo trata de la caracterización de láseres compactos de estado sólido, con primer enfoque, el estudio del concepto microchip aplicado al láser en varios huéspedes cristalinos dopados con tierras raras. Se reporta los resultados sobre el estudio del efecto de la thermal lens, necesario para la obtención de láser con esta configuración, así como para el funcionamiento láser en continuo y pulsado utilizando la técnica Q-switch. En los experimentos, el concepto microchip se define como una cavidad láser casi monolítica. Este concepto se estudia para diferentes emisiones de láser a ~1.06 m de los iones Yb3+ y Nd3+, a ~1,3 m de Nd3+, a ~1,95 m de Tm3+ hay ~2.05 m del ion Ho3+. En régimen de onda continua se examina detalladamente para los iones de lantánidos trivalentes mencionados en varios huéspedes cristalinos con el objetivo de comparar el potencial de cada material. En este trabajo, se demuestran eficiencias muy cercanas al límite teórico. Por otra parte, también se presentan láseres pulsados de estado sólido con la configuración microchip con varios absorbedores saturables. Con este propósito, se utilizan como absorbedores saturables nuevos nanomateriales como el MoS2, nano-estructuras de carbono (SWCNT, el grafeno de una y de varias capas) y un SESA. Además, el más convencional Cr:YAG (~1.06 m) y el Cr:ZnS (~1.9 m) se examinan para comparar sus rendimientos
This work deals with the characterization of compact solid state lasers, as a first approach to the study of the microchip laser concept applied to several rare earth-doped crystalline hosts. The results on the study of the thermal lens, required for the microchip laser operation as well as the continuous wave and passive Q-switched laser operation in microchip configuration are reported. In the experiments, the microchip concept is defined as a quasi-monolithic laser cavity. Such a concept is studied for different laser emissions at ~1.06 μm from Yb3+ and Nd3+ ions, at ~1.3 μm from Nd3+, at ~1.95 μm from Tm3+ and at ~2.05 μm from Ho3+. The continuous wave regime is examined in detail for the above mentioned trivalent lanthanide ions embedded in several crystalline hosts with the aim to compare the potential of each gain material. Slope efficiencies very close to the theoretical limit are demonstrated in this work. On the other hand, microchip solid state lasers passively Q-switched with several saturable absorbers are also presented. For this purpose, novel nanomaterials such as MoS2, carbon nanostructures (SWCNTs, single- and multilayer graphene) and a SESA are used as saturable absorbers. Besides, the most conventional Cr:YAG (~1.06 μm) and Cr:ZnS (~1.9 μm) are examined to compare their performance.
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Mercer, Colin. "Development of a Diode Laser Pumped Passively Q-Switched Laser Source for Range-Finding and Designating." Thesis, University of Manchester, 2009. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.508559.

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Segura, Sarmiento Martha Yamile. "Monoclinic tm:klu(w04)2: a new crystal for efficient diode-pumped continuous-wave and q-switched lasers." Doctoral thesis, Universitat Rovira i Virgili, 2012. http://hdl.handle.net/10803/80852.

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El doble tungstato cristalino de potasio y lutecio con estructura monoclínica, KLu(WO4)2, se ha establecido como una nueva matriz laser de estado sólido para iones de Tm, Yb y Ho debido a (i) las altas secciones eficaces de absorción y emisión; (ii) la relativamente larga distancia entre iones Lu-Lu permitiendo altos niveles de concentración de iones activos sin perdidas significativas por fluorescencia; y (iii) el tiempo de vida suficientemente largo del nivel emisor de la transición láser asegurando un alto almacenamiento de energía. Estas características son explotadas en este trabajo usando Tm como ion activo para generar emisión láser a 1.94 µm. El máximo local de absorción del agua a esta longitud de onda hace a este laser interesante para aplicaciones medicas y atmosféricas. Cambio de polarización, operación en dos longitudes de onda, laser vibrónico, diseño láser de capa delgada Thin-disk, Q-conmutado pasivo y la interacción láser-tejido del láser de Tm:KLu(WO4)2 a 1.94 µm son demostrados en este trabajo.
Monoclinic potassium lutetium double tungstate KLu(WO4)2 is established as new laser host for Tm, Yb and Ho active ions due to (i) its very high values of absorption and emission cross sections (ii) its relatively large Lu-Lu distances allowing high ion concentration with minimum fluorescence quenching effects and (iii) the long lifetime of the upper laser level ensuring high energy storage. These characteristics are exploited in this work using Tm as active ion to generate laser emission at 1.94 µm. The local maximum of water absorption at this wavelength makes this laser interesting for medical and atmospheric applications. Polarization switching, dual-wavelength operation, vibronic laser, thin-disk laser design, passive Q-switching and the laser-tissue interaction of the 1.94 µm Tm:KLu(WO4)2 laser are demonstrated in this work
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El, bassri Farid. "Sources lasers déclenchées nanosecondes : Applications à la spectroscopie Raman cohérente sous champ électrique." Thesis, Limoges, 2014. http://www.theses.fr/2014LIMO0060/document.

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Du fait de leur compacité, leur robustesse et leur faible coût, les microlasers impulsionnels nanosecondes constituent des sources particulièrement attractives pour de nombreux systèmes de détection et d'analyse, en particulier les cytomètres en flux ou les dispositifs pour la spectroscopie CARS (Coherent Raman Anti Stokes Scattering). Cependant, ces applications nécessitent des performances améliorées en ce qui concerne la gigue temporelle et la cadence de répétition accessible. Dans sa première partie, cette thèse propose des solutions originales pour atteindre les performances requises à partir de microlasers passivement déclenchés, grâce à la mise en oeuvre d'une cavité hybride couplée, pompée par une onde modulée en intensité. Une cadence de répétition supérieure à 30 kHz avec une gigue demeurant inférieure à 200 ns est atteinte. Le potentiel de microlasers à fibres déclenchés par modulation du gain pour monter en cadence est aussi évalué, montrant que des impulsions à faible gigue, à une cadence de plus de 2 MHz peuvent être produites. Enfin, la dernière partie est consacrée à la mise au point et à l'exploitation d'un nouveau système de spectroscopie CARS assisté par une excitation électrique haute tension. Ce dispositif, réalisé à partir d'un microlaser amplifié, permet de s'affranchir du bruit de fond non résonnant des mesures et de réaliser une analyse spectroscopique fine de la réponse de différents milieux d'intérêt sous champ continu ou impulsionnel, pouvant conduire à une nouvelle méthode de microdosimétrie de champ. Diverses applications, dont la granulométrie à l'échelle micro ou nanométrique ou l'identification de marqueurs pour la biologie, sont démontrées
Thanks to their compactness, robustness and low cost, pulsed nanosecond microlasers are particularly attractive sources for different detection and analysis systems, particularly flow cytometers or devices for CARS (Coherent Anti Raman Stokes Scattering) spectroscopy. However, these applications require reduced time jitter and increased repetition rate. The first part of this thesis proposes novel solutions to achieve the required performance from passively Q-switched microlasers, which are based on an hybrid coupled-cavity and intensitymodulated pump wave. A repetition rate greater than 30 kHz with jitter remaining lower than 200 ns is reached. Pulsed fiber microlasers operating by gain switching are also studied, showing that pulses with low timing jitter, at a repetition rate of more than 2 MHz can be obtained. The last part is devoted to the development and the implementation of a new system of CARS spectroscopy assisted by a high-voltage electrical stimulation. This device, based on an amplified microlaser, allows to substract the non-resonant background noise in the measurements. Thus, a fine spectroscopic analysis of the response of different environments of interest in continuous or pulsed field can be achieved. It may lead to a new method for field microdosimetry. Various applications, including granulometry at the micro or nanometric scale and the identification of markers for biology, are shown
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Lavastre, Eric. "Déclenchement des microlasers solides émettant à 1,55 µm par un dispositif à semiconducteur." Université Joseph Fourier (Grenoble ; 1971-2015), 1998. http://www.theses.fr/1998GRE10173.

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Les microlasers emettant a 1,55 m sont des lasers solides de faible volume (<1 mm#3) a base de verre : er, yb dont les miroirs de la cavite sont directement deposes sur le milieu a gain. En introduisant un modulateur dans la cavite, il est possible de declencher le laser afin d'obtenir des impulsions de puissance crete elevee donc exploitables pour des applications telles que la telemetrie. L'objet de cette these est d'utiliser un dispositif a semiconducteur comme modulateur. De par leurs proprietes optiques et electriques, les semiconducteurs presentent un fort potentiel pour le declenchement passif et le declenchement actif. Les structures etudiees sont des couches epaisses et des structures a puits quantiques constituees d'in#xga#1##x##yal#yas epitaxiees sur un substrat d'inp. En declenchement passif dans une configuration microlaser, les meilleurs resultats ont ete obtenus avec une couche epaisse de 80 nm d'in#0#,#4#8ga#0#,#5#2as. Les energies et les puissances cretes par impulsion sont respectivement de 2 j et 2w avec un substrat d'inp semi-isolant et, 25 nj et 5w avec un substrat d'inp non dope. Ces differences dans les performances sont dues a des effets non-lineaires associes au substrat d'inp semi-isolant qui elargissent les impulsions. En declenchement actif, les premiers essais en cavite externe ont montre qu'il est possible de moduler l'emission laser en appliquant des creneaux de tension inferieurs a 20v pendant 1 s aux bornes d'une diode p. I. N dont la region intrinseque se compose de 10 puits quantiques d'in#0#,#5#3ga#0#,#4#7as dans des barrieres d'in#0#,#5#2al#0#,#4#8as. Afin d'optimiser l'effet du champ electrique, une structure mesa et une passivation ont ete realisees.
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Lin, Yao-chun, and 林耀群. "Use of GaAs as a passive Q-switch as well as an output coupler for diode-pumped Nd:YVO4 lasers." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/93917818462083697801.

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碩士
國防大學中正理工學院
應用物理研究所
94
In this paper, we investigate an all-solid-state passive Q-switched Nd:YVO4 laser system. Q-switching operation is very common and important for diode-pumped solid-state lasers. And in recent years, Q-switched lasers have been used in many fields, such as nonlinear optics, range finding, medicine, and micromachining, etc. In this experiment, we use GaAs wafer as an important element for passive Q-switching. The GaAs wafer, which works as an saturable absorber, was used as the Q-switch in the laser system. Moreover, GaAs wafer also acts as an anti-resonant Fabry-Perot resonantor, so we use it as an output coupler. Its reflectance is 73.5%, and its transmittance is 26.5%. We use two gain media with different lengths. One is 6 mm, and the other is 3 mm. The results of this experiment are as follows: The cavity length is adjustable from 8 mm to 17 mm；the shotest pulse width is 7 ns；its photon lifetime is about 0.33 ns；the highest peak power is 314 W；the highest repetition rate is about 1.7 MHz；its pulse energy is up to 2.2 μJ.
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Tsai, LingYi, and 蔡玲意. "Passively Q-switched intracavity optical parametric oscillator." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/85773595800845068740.

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碩士
國立交通大學
電子物理系所
93
Extremely short (1.6 ns) high-peak-power (> 10 kW) pulses of lasers at the eye-safe wavelength region about 1.5 �慆 are obtained by intracavity optical parametric oscillators (OPOs). We demonstrated a compact efficient eye-safe OPO pumped by a diode-pumped passively Q-switched Nd:GdVO4 laser to produce peak powers at 1571 nm higher than 20 kW with pulse widths of 0.7ns . On the other hand, we overcome the instablility in the IOPO by using two-mirror structure .At the same time, we raise the pulse energy to 1.5 times. Due to its stability, we try to apply the two-mirror structure to tune wavelengths by temperature. As a result, we can get the curve slope about 0.4nm/0C. By the way, using Nd:Gd0.7Y0.3VO4 crystals may get 3 times the pulse energy by using Nd:YVO4 crystals and 1.8 times the pulse energy by using Nd:GdVO4 crystals.
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Book chapters on the topic "Passive Q-switch"

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Lucianetti, A., N. G. Muller, R. Weber, H. P. Weber, A. Papashvili, V. A. Konyushkin, and T. T. Basiev. "Highly Efficient High-Average Power Nd:YAG Laser with a Passive Q-Switch." In Optical Resonators — Science and Engineering, 407–17. Dordrecht: Springer Netherlands, 1998. http://dx.doi.org/10.1007/978-94-017-2486-9_25.

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Lorenz, Sebastian, Mark Bärwinkel, Wolfgang Mühlbauer, and Dieter Brüggemann. "Pulse Train Ignition with Passively Q-Switched Laser Spark Plugs Under Engine-like Conditions." In Ignition Systems for Gasoline Engines, 254–59. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-45504-4_15.

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Zayhowski, J. J. "Passively Q-Switched Microchip Lasers." In Solid-State Lasers and Applications, 1–76. CRC Press, 2017. http://dx.doi.org/10.1201/9781420005295-1.

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Zayhowski, J. "Passively Q-Switched Microchip Lasers." In Optical Science and Engineering, 1–75. CRC Press, 2006. http://dx.doi.org/10.1201/9781420005295.ch1.

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Lncrnjan, I., R. Savastru, D. Savastru, and S. Miclo. "Numerical Simulation of Passively Q-Switched Solid State Lasers." In Numerical Simulation - From Theory to Industry. InTech, 2012. http://dx.doi.org/10.5772/47812.

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Ismail, Mohd Afiq, Sulaiman Wadi Harun, Harith Ahmad, and Mukul Chandra Paul. "Passive Q-switched and Mode-locked Fiber Lasers Using Carbon-based Saturable Absorbers." In Fiber Laser. InTech, 2016. http://dx.doi.org/10.5772/61703.

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Dong, Jun, Ken-ichi Ueda, Hideki Yagi, and Alexander A. "Concentration-Dependent Laser Performance of Yb:YAG Ceramics and Passively Q-switched Yb:YAG/Cr,Ca:YAG Lasers." In Advances in Solid State Lasers Development and Applications. InTech, 2010. http://dx.doi.org/10.5772/7943.

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Conference papers on the topic "Passive Q-switch"

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Wu, Sheng. "Accurate timing of passive Q-switch lasers." In Defense and Security Symposium, edited by Gary L. Wood and Mark A. Dubinskii. SPIE, 2006. http://dx.doi.org/10.1117/12.663684.

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Stone-Sundberg, Jennifer L., Milan R. Kokta, Narasimha S. Prasad, and Ramesh K. Shori. "Novel non-stoichiometric Co2+: spinel passive Q-switch." In Lasers and Applications in Science and Engineering, edited by Hanna J. Hoffman and Ramesh K. Shori. SPIE, 2005. http://dx.doi.org/10.1117/12.623235.

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Klimov, L. V., I. A. Shcherbakov, and V. B. Tsvetkov. "Cr4+:YSGG-Passive Q-Switch for Multispikes Nd-Lasers." In Advanced Solid State Lasers. Washington, D.C.: OSA, 1993. http://dx.doi.org/10.1364/assl.1993.tl9.

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Chen, Junewen. "Five simultaneously Q-switch mode-locked passive laser modulators." In Lasers and Applications in Science and Engineering, edited by Hanna J. Hoffman, Ramesh K. Shori, and Norman Hodgson. SPIE, 2007. http://dx.doi.org/10.1117/12.697522.

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Sulc, J., H. Jelinkova, K. Nejezchleb, and V. Skoda. "Saturation anisotropy in V:YAG passive Q-switch at 1338 nm." In 11th European Quantum Electronics Conference (CLEO/EQEC). IEEE, 2009. http://dx.doi.org/10.1109/cleoe-eqec.2009.5194746.

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Smillie, M. W., M. Silver, and S. T. Lee. "Passive Q-switch materials for diode pumped Nd:YAG laser systems." In 2013 High Power Diode Lasers and Systems Conference (HPD). IEEE, 2013. http://dx.doi.org/10.1109/hpd.2013.6706601.

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Sirota, Marina, Ehud Galun, Vladimir Krupkin, Alexander Glushko, Ariel Kigel, Maya Brumer, Aldona Sashchiuk, L. Amirav, and Efrat Lifshitz. "IV-VI semiconductor nanocrystals for passive Q-switch in IR." In Optical Science and Technology, the SPIE 49th Annual Meeting, edited by David L. Andrews, Guozhong Z. Cao, and Zeno Gaburro. SPIE, 2004. http://dx.doi.org/10.1117/12.559416.

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Conroy, R. S., A. M. Malyarevich, A. J. Kemp, G. J. Friel, V. P. Mikhailov, and B. D. Sinclair. "V:YAG as passive Q-switch at 1342 nm and 1064 nm." In Technical Digest Summaries of papers presented at the Conference on Lasers and Electro-Optics Conference Edition. 1998 Technical Digest Series, Vol.6. IEEE, 1998. http://dx.doi.org/10.1109/cleo.1998.676026.

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Andrauskas, Donna M., and Chandler Kennedy. "Tetravalent Chromium Solid-State Passive Q Switch for Nd:YAG Laser Systems." In Advanced Solid State Lasers. Washington, D.C.: OSA, 1991. http://dx.doi.org/10.1364/assl.1991.mt12.

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Stephen, M. A., Joseph L. Dallas, and Robert S. Afzal. "Multibillion shot high-influence exposure of Cr4+:YAG passive Q-switch." In Laser-Induced Damage in Optical Materials: 1997, edited by Gregory J. Exarhos, Arthur H. Guenther, Mark R. Kozlowski, and M. J. Soileau. SPIE, 1998. http://dx.doi.org/10.1117/12.307020.

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Reports on the topic "Passive Q-switch"

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Zayhowski, John J., Colby Dill, Cook III, Daneu Chris, and John L. Mid- and High-Power Passively Q-Switched Microchip Lasers. Fort Belvoir, VA: Defense Technical Information Center, January 1999. http://dx.doi.org/10.21236/ada373717.

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Zameroski, Nathan D., Michael Clement Wanke, and David J. Bossert. Cavity length dependence of mode beating in passively Q-switched Nd-solid state lasers. Office of Scientific and Technical Information (OSTI), July 2012. http://dx.doi.org/10.2172/1055620.

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