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Dissertations / Theses on the topic 'PECVD silicon carbide and silicon nitride'

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Published: 6 September 2023

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1

Razzell, Anthony Gordon. "Silicon carbide fibre silicon nitride matrix composites." Thesis, University of Warwick, 1992. http://wrap.warwick.ac.uk/110559/.

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Silicon carbide fibre/silicon nitride matrix composites have been fabricated using the reaction bonded silicon nitride (RBSN) and sintered reaction bonded silicon nitride (SRBSN) processing routes. A filament winding and tape casting system was developed to produce sheets of parallel aligned fibres within a layer of green matrix ('prepreg') which were cut, stacked and hot pressed to form a plate. This was nitrided and (in the case of SRBSN matrix composites) hot pressed at 1700°C to density the matrix. The magnesia (MgO) and the yttria/alumina (Y2O3/AI2O3) additive SRBSN systems were investiga

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2

Chen, Wan Lam Florence Photovoltaics &amp Renewable Energy Engineering Faculty of Engineering UNSW. "PECVD silicon nitride for n-type silicon solar cells." Publisher:University of New South Wales. Photovoltaics & Renewable Energy Engineering, 2008. http://handle.unsw.edu.au/1959.4/41277.

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The cost of crystalline silicon solar cells must be reduced in order for photovoltaics to be widely accepted as an economically viable means of electricity generation and be used on a larger scale across the world. There are several ways to achieve cost reduction, such as using thinner silicon substrates, lowering the thermal budget of the processes, and improving the efficiency of solar cells. This thesis examines the use of plasma enhanced chemical vapour deposited silicon nitride to address the criteria of cost reduction for n-type crystalline silicon solar cells. It focuses on the surface

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3

Tatli, Zafer. "Silicon nitride and silicon carbide fabrication using coated powders." Thesis, University of Newcastle Upon Tyne, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.394640.

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4

Turan, Servet. "Microstructural characterisation of silicon nitride-silicon carbide particulate composites." Thesis, University of Cambridge, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.627653.

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5

Kim, Hyoun-Ee. "Gaseous corrosion of silicon carbide and silicon nitride in hydrogen /." The Ohio State University, 1987. http://rave.ohiolink.edu/etdc/view?acc_num=osu1487327695622538.

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6

Gao, Wei. "Oxidation of nitride-bonded silicon carbide (NBSC) and hot rod silicon carbide with coatings." Thesis, University of Strathclyde, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.366751.

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7

Dominguez, Bucio Thalia. "NH3-free PECVD silicon nitride for photonic applications." Thesis, University of Southampton, 2018. https://eprints.soton.ac.uk/422874/.

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Silicon Photonics has open the possibility of developing multilayer platforms based on complementary metal-oxide semiconductors compatible materials that have the potential to provide the density of integration required to fabricate complex photonic circuits. Amongst these materials, silicon nitride (SiN) has drawn attention due to its fabrication flexibility and advantageous intrinsic properties that can be tailored to fulfil the requirements of different linear and non-linear photonic applications covering the ultra-violet to mid-infrared wavelengths. Yet, the fabrication techniques typicall

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8

Unal, Ozer. "Interface studies in silicon nitride/silicon carbide and gallium indium arsenide/gallium arsenide systems." Case Western Reserve University School of Graduate Studies / OhioLINK, 1991. http://rave.ohiolink.edu/etdc/view?acc_num=case1059501714.

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9

Demir, Adem. "Silicon carbide fibre reinforced #beta#-sialon ceramics." Thesis, University of Newcastle Upon Tyne, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.391291.

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10

Gasch, Matthew J. "Processing and mechanical properties of silicon nitride/silicon carbide ceramic nanocomposites derived from polymer precursors /." For electronic version search Digital dissertations database. Restricted to UC campuses. Access is free to UC campus dissertations, 2003. http://uclibs.org/PID/11984.

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11

Martinelli, Antonio Eduardo. "Diffusion bonding of silicon carbide and silicone nitride to molybdenum." Thesis, McGill University, 1995. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=40191.

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This study focuses on various aspects of solid-state diffusion bonding of two ceramic-metal combinations, namely: silicon carbide-molybdenum (SiC-Mo), and silicon nitride-molybdenum (Si$ rm sb3N sb4$-Mo). Single SiC-Mo and $ rm Si sb3N sb4$-Mo joints were produced using hot-uniaxial pressing. The microstructure of the resulting interfaces were characterized by image analysis, scanning electron microscopy (SEM), electron probe micro-analysis (EPMA), and X-ray diffraction (XRD). The mechanical properties of the joints were investigated using shear strength testing, depth sensing nanoindentation,

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12

Kerkar, Awdhoot Vasant. "Investigation of steric stabilization as a route for colloidal processing of silicon carbide/silicon nitride composites." Case Western Reserve University School of Graduate Studies / OhioLINK, 1990. http://rave.ohiolink.edu/etdc/view?acc_num=case1059055054.

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13

Zetterling, Carl-Mikael. "Silicon dioxide and aluminium nitride as gate dielectric for high temperature and high power silicon carbide MOSFETs." Doctoral thesis, KTH, Electronic Systems Design, 1997. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-2514.

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<p>Silicon carbide (SIC) is a wide bandgap semiconductor thathas been suggested as a replacement for silicon in applicationsusing high voltages, high frequencies, high temperatures orcombinations thereof. Several basic process steps need to bedeveloped for reliable manufacturing of long-term stableelectronic devices. One important process step is the formationof an insulator on the silicon carbide surface that may be usedas a) a gate dielectric, b) for device isolation or c) forpassivation of the surface. Silicon dioxide and aluminumnitride have been suggested for these purposes. This thesisco

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14

Sundaresan, Siddarth G. "Ultra-fast high temperature microwave processing of silicon carbide and gallium nitride." Fairfax, VA : George Mason University, 2007. http://hdl.handle.net/1920/2851.

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Thesis (Ph.D.)--George Mason University, 2007.<br>Title from PDF t.p. (viewed Oct. 29, 2007). Thesis director: Mulpuri V. Rao. Submitted in partial fulfillment of the requirements for the degree of Doctor of Philosophy in Electrical and Computer Engineering. Vita: p. 170. Includes bibliographical references (p. 160-169). Also available in print.

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15

Okayama, Taizo. "Performance of devices made of large band-gap semiconductors, SiC and GaN." Fairfax, VA : George Mason University, 2007. http://hdl.handle.net/1920/2935.

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Thesis (Ph. D.)--George Mason University, 2007.<br>Title from PDF t.p. (viewed Jan. 21, 2008). Thesis director: Mulpuri V. Rao. Submitted in partial fulfillment of the requirements for the degree of Doctor of Philosophy in Electrical and Computer Engineering. Vita: p. 128. Includes bibliographical references (p. 122-127). Also available in print.

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16

Cai, Li. "Improved understanding and control of the properties of PECVD silicon nitride and its applications in multicrystalline silicon solar cells." Diss., Georgia Institute of Technology, 1997. http://hdl.handle.net/1853/15468.

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17

Bazilchuk, Molly Strimbeck. "Improved Induced Diode Photodetectors by Increased Fixed Charge in PECVD Amorphous Silicon Nitride." Thesis, Norges teknisk-naturvitenskapelige universitet, Institutt for materialteknologi, 2014. http://urn.kb.se/resolve?urn=urn:nbn:no:ntnu:diva-25278.

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The predictable quantum efficient detector (PQED) is a cheaper, more practical alternative to the current radiometric primary standard, the cryogenic radiometer. The PQED is made of an induced diode, a rectifying junction based on a positively charged dielectric film which induces an n-type inversion layer on a p-type silicon substrate. Increasing the fixed charge Qf in the dielectric has been theoretically predicted to improve the quantum efficiency of the diode by decreasing the surface recombination velocity (SRV) at the dielectric-silicon interface, as well as improving the performance of

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18

Lee, Jaeseob. "Direct bonding of gallium nitride to silicon carbide physical, and electrical characterization /." NCSU, 2003. http://www.lib.ncsu.edu/theses/available/etd-08072003-125025/.

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The direct bonding method is applied to the GaN/SiC system, and the processing conditions for successful direct bonding are clarified. Direct bonding of GaN/SiC is achieved at 900¡ÆC. The direct bonding of GaN to Si-face SiC is very dependent on the choice of chemical treatments, but the bonding of GaN to C-face SiC is less dependent on surface preparation. If a native oxide is present when the bonded interface is prepared, the current through the interface is decreased, which is attributed to an energy barrier due to the presence of charged interface states. TEM images indicate 10nm spaced di

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19

Romero, Amy Marie. "Static and Dynamic Characterization of Silicon Carbide and Gallium Nitride Power Semiconductors." Thesis, Virginia Tech, 2018. http://hdl.handle.net/10919/93744.

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Wide-bandgap semiconductors have made and are continuing to make a major impact on the power electronics world. The most common commercially available wide-bandgap semiconductors for power electronics applications are SiC and GaN devices. This paper focuses on the newest devices emerging that are made with these wide-bandgap materials. The static and dynamic characterization of six different SiC MOSFETs from different manufacturers are presented. The static characterization consists of the output characteristics, transfer characteristics and device capacitances. High temperature (up to 150 °

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20

Stodilka, Danielle O. "Silicon carbide MIS and MOS development using alternative nitride and oxide dielectrics." [Gainesville, Fla.] : University of Florida, 2005. http://purl.fcla.edu/fcla/etd/UFE0013116.

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21

Gulses, Alkan Ali. "Ellipsometric And Uv-vis Transmittance Analysis Of Amorphous Silicon Carbide Thin Films." Master's thesis, METU, 2004. http://etd.lib.metu.edu.tr/upload/12605589/index.pdf.

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The fundamentals of the ellipsometry are reviewed in order to point out the strengths and weaknesses of the ellipsometric measurements. The effects of the surface conditions (such as degree of cleanliness, contaminated thin layer, roughness etc&hellip<br>) on the ellipsometric variables are experimentally studied<br>the optimum procedures have been determined. Hydrogenated amorphous silicon carbide (a-Si1-xCx:H) thin films are produced by plasma enhanced chemical vapor deposition (PECVD) technique with a circular reactor, in a way that RF power and carbon contents are taken as variables. These

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22

Graham, David W. "Corrosion resistant chemical vapor deposited coatings for SiC and Si₃N₄ /." This resource online, 1993. http://scholar.lib.vt.edu/theses/available/etd-09292009-020327/.

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23

Im, Hsung Jai. "Metal contacts to silcon carbide and galliumnitride studied with ballistic electron emission microscopy." Connect to this title online, 2001. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=osu1000844302.

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Thesis (Ph. D.)--Ohio State University, 2001.<br>Title from first page of PDF file. Document formatted into pages; contains xiii, 165 p.; also contains graphics (some col.). Includes abstract and vita. Advisor: Jonathan P. Pelz, Dept. of Physics. Includes bibliographical references (p. 160-165).

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24

Im, Hsung J. "Metal Contacts to Silicon Carbide and Gallium Nitride Studied with Ballistic Electron Emission Microscopy." The Ohio State University, 2001. http://rave.ohiolink.edu/etdc/view?acc_num=osu1000844302.

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25

Im, Hsung Jai. "Metal contacts to silicon carbide and gallium nitride studied with ballistic electron emission microscopy /." The Ohio State University, 2002. http://rave.ohiolink.edu/etdc/view?acc_num=osu1486402957194756.

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26

Zaman, Farhana. "Characterization of selective epitaxial graphene growth on silicon carbide: limitations and opportunities." Diss., Georgia Institute of Technology, 2012. http://hdl.handle.net/1853/43624.

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The need for post-CMOS nanoelectronics has led to the investigation of innovative device structures and materials. Graphene, a zero bandgap semiconductor with ballistic transport properties, has great potential to extend diversification and miniaturization beyond the limits of CMOS. The goal of this work is to study the growth of graphene on SiC using the novel method of selective graphitization. The major contributions of this research are as follows - First, epitaxial graphene is successfully grown on selected regions of SiC not capped by AlN deposited by molecular beam epitaxy. This cont

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27

Iqbal, Abid. "The Sputtering and Characterization of C-Axis Oriented Aluminium Nitride Thin Films On Top Of Cubic Silicon Carbide-On-Silicon Substrates for Piezoelectric Applications." Thesis, Griffith University, 2017. http://hdl.handle.net/10072/365840.

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The growth of micro-scale wireless electronics is increasing significantly because of their miniaturisation and low power consumption. These devices currently draw power from batteries or chemical fuel cells. Their limited life-spans prompt active research to find an alternative solution by harvesting ambient energy from the environment. Numerous sources are available such as solar, thermoelectric, acoustic, and mechanical vibrations. Among them, mechanical vibration is perhaps the most practical to power these wireless electronic devices via piezoelectric transduction. Three most common piezo

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28

Komarovy, F. F., L. A. Vlasukova, I. N. Parkhomenko, et al. "Strong Room-Temperature Photoluminescence of Si-rich and N-rich Silicon-Nitride Films." Thesis, Sumy State University, 2013. http://essuir.sumdu.edu.ua/handle/123456789/35162.

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Si-rich and N-rich silicon nitride films were deposited at low temperature 300 °C by using plasmaenhanced chemical vapor deposition (PECVD). The optical and structural properties of these films have been investigated by ellipsometry, Rutherford backscattering (RBS), transmission electron microscopy (TEM), Raman spectroscopy (RS) and photoluminescence (PL). The formation of silicon clusters in both Sirich and N-rich silicon nitride films after annealing at 900 °C and 1000 °C for hour in N2 ambient has been shown by TEM. Dependency of PL spectra on stoichiometry and post-annealing temperatu

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29

Kaminski, Piotr M. "Remote plasma sputtering for silicon solar cells." Thesis, Loughborough University, 2013. https://dspace.lboro.ac.uk/2134/13058.

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The global energy market is continuously changing due to changes in demand and fuel availability. Amongst the technologies considered as capable of fulfilling these future energy requirements, Photovoltaics (PV) are one of the most promising. Currently the majority of the PV market is fulfilled by crystalline Silicon (c-Si) solar cell technology, the so called 1st generation PV. Although c-Si technology is well established there is still a lot to be done to fully exploit its potential. The cost of the devices, and their efficiencies, must be improved to allow PV to become the energy source of

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30

Jordan, Jennifer Lynn. "Shock-activated reaction synthesis and high pressure response of Ti-based ternary carbide and nitride ceramics." Diss., Georgia Institute of Technology, 2003. http://hdl.handle.net/1853/19674.

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31

張秀霞 and Sau-ha Cheung. "Growing of GaN on vicinal SiC surface by molecular beam epitaxy." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2002. http://hub.hku.hk/bib/B31243009.

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32

Cheung, Sau-ha. "Growing of GaN on vicinal SiC surface by molecular beam epitaxy /." Hong Kong : University of Hong Kong, 2002. http://sunzi.lib.hku.hk/hkuto/record.jsp?B25212163.

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33

Jehanathan, Neerushana. "Thermal stability of plasma enhanced chemical vapor deposited silicon nitride thin films." University of Western Australia. School of Mechanical Engineering, 2007. http://theses.library.uwa.edu.au/adt-WU2007.0069.

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[Truncated abstract] This study investigates the thermal stability of Plasma Enhanced Chemical Vapor Deposited (PECVD) silicon nitride thin films. Effects of heat-treatment in air on the chemical composition, atomic bonding structure, crystallinity, mechanical properties, morphological and physical integrity are investigated. The chemical composition, bonding structures and crystallinity are studied by means of X-ray Photoelectron Spectroscopy (XPS), Fourier Transform Infrared (FTIR) Spectroscopy and Transmission Electron Microscopy (TEM). The mechanical properties, such as hardness and Young’

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34

Souza, Denise Criado Pereira de. "Estudo da morfologia e estrutura de filmes de oxinitreto de silício (SiOxNy) obtidos pela técnica de PECVD." Universidade de São Paulo, 2007. http://www.teses.usp.br/teses/disponiveis/3/3140/tde-09012008-145807/.

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Neste trabalho são apresentados resultados da caracterização estrutural e morfológica de filmes de oxinitreto de silício (SiOxNy) depositados pela técnica de deposição química a vapor assistida por plasma (PECVD) a baixa temperatura (320°C). O objetivo deste trabalho é relacionar a composição química de ligas amorfas de SiOxNy com suas propriedades ópticas, estruturais, morfológicas e mecânicas visando sua aplicação em dispositivos elétricos, optoeletrônica e microestruturas. A proposta é dar continuidade a trabalhos prévios desenvolvidos no grupo, que demonstraram a viabilidade de controlar a

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35

Sel, Kivanc. "The Effects Of Carbon Content On The Properties Of Plasma Deposited Amorphous Silicon Carbide Thin Films." Phd thesis, METU, 2007. http://etd.lib.metu.edu.tr/upload/2/12608292/index.pdf.

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The structure and the energy band gap of hydrogenated amorphous silicon carbide are theoretically revised. In the light of defect pool model, density of states distribution is investigated for various regions of mobility gap. The films are deposited by plasma enhanced chemical vapor deposition system with various gas concentrations at two different, lower (30 mW/cm2) and higher (90 mW/cm2), radio frequency power densities. The elemental composition of hydrogenated amorphous silicon carbide films and relative composition of existing bond types are analyzed by x-ray photoelectron spectroscopy me

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36

Parro, Rocco John III. "THE MECHANICAL PROPERTIES OF AMORPHOUS SILICON CARBIDE FILMS DEPOSITED BY PECVD AND RF SPUTTERING FOR APPLICATION AS A STRUCTURAL LAYER IN MICROBRIDGE-BASED RF MEMS." Case Western Reserve University School of Graduate Studies / OhioLINK, 2010. http://rave.ohiolink.edu/etdc/view?acc_num=case1270241057.

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37

Rajgadkar, Ajay. "Characterization of Dielectric Films for Electrowetting on Dielectric Systems." Scholar Commons, 2010. http://scholarcommons.usf.edu/etd/3607.

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Electrowetting is a phenomenon that controls the wettability of liquids on solid surfaces by the application of electric potential. It is an interesting method to handle tiny amounts of liquid on solid surfaces. In recent times, researchers have been investigating this phenomenon and have reported some unexplained behavior and degradation in the Electrowetting system performance. Electrowetting systems include the presence of electric field and different materials from metals to dielectrics and electrolytes that create an environment in which corrosion processes play a very important role. Wit

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38

LaBarbera, Michael Anthony. "Long-Term, High Temperature Mechanical Stability of PECVD Amorphous Silicon Carbide for Use as Structural Material in Harsh Environment MEMS." Case Western Reserve University School of Graduate Studies / OhioLINK, 2014. http://rave.ohiolink.edu/etdc/view?acc_num=case1396456649.

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39

Graham, David W. "Corrosion resistant chemical vapor deposited coatings for SiC and Si3N4." Thesis, Virginia Tech, 1993. http://hdl.handle.net/10919/44944.

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<p>Silicon carbide and silicon nitride turbine engine components are susceptible to hot corrosion by molten sodium sulfate salts which are formed from impurities in the engine's fuel and air intake. Several oxide materials were identified which may be able to protect these components from corrosion and preserve their structural properties. Ta20, coatings were identified as one of the most promising candidates. Thermochemical calculations showed that the chemical vapor deposition(CVD) of tantalum oxide from O2 and TaCI5 precursors is thermodynamically feasible over a range of pressures, tempera

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40

Bosco, Giácomo Bizinoto Ferreira 1987. "Photoluminescence of Tb3+ in a-Si3N4:H prepared by reactive RF-Sputtering and ECR PECVD = Fotoluminescência de Tb3+ em a-Si3N4:H preparado por RF-Sputtering reativo e ECR PECVD." [s.n.], 2017. http://repositorio.unicamp.br/jspui/handle/REPOSIP/322722.

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Orientador: Leandro Russovski Tessler<br>Tese (doutorado) - Universidade Estadual de Campinas, Instituto de Física Gleb Wataghin<br>Made available in DSpace on 2018-09-01T20:54:28Z (GMT). No. of bitstreams: 1 Bosco_GiacomoBizinotoFerreira_D.pdf: 9507140 bytes, checksum: 4980b29f48f98f8ff97e8a0a37b7577e (MD5) Previous issue date: 2017<br>Resumo: Este trabalho fornece caracterização ótica e estrutural de filmes finos compostos por nitreto de silício amorfo hidrogenado dopado com térbio (a-SiNx:H) ¿ crescidos por deposição química a vapor assistida por plasma gerado através de ressonância ciclo

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41

Chan, King-lung, and 陳勁龍. "A study of geometrical properties of SiC and GaN surfaces by auger electron spectroscopy." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2002. http://hub.hku.hk/bib/B2664387X.

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42

Devarapally, Rahul Reddy. "Survey of applications of WBG devices in power electronics." Kansas State University, 2016. http://hdl.handle.net/2097/32665.

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Master of Science<br>Department of Electrical and Computer Engineering<br>Behrooz Mirafzal<br>Wide bandgap devices have gained increasing attention in the market of power electronics for their ability to perform even in harsh environments. The high voltage blocking and high temperature withstanding capabilities make them outperform existing Silicon devices. They are expected to find places in future traction systems, electric vehicles, LED lightning and renewable energy engineering systems. In spite of several other advantages later mentioned in this paper, WBG devices also face a few challeng

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Prado, Rogério Junqueira. "Propriedades químicas e morfológicas de filmes hidrogenados de carbeto de silício amorfo." Universidade de São Paulo, 1997. http://www.teses.usp.br/teses/disponiveis/43/43133/tde-07032002-142147/.

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Nesta dissertação discorremos acerca do crescimento e caracterização de filmes finos de carbeto de silício amorfo hidrogenado (a-Si1-xCx:H), crescidos pelo método de deposição química de vapor assistida por plasma (PECVD) no regime de baixa densidade de potência a partir de misturas de silano e metano. Foram analisadas e correlacionadas as propriedades ópticas, morfológicas e composicionais de filmes depositados em diferentes condições de fluxo de silano e concentração de metano. Os resultados não apenas confirmaram dados anteriores obtidos em filmes de a-Si1-xCx:H similares, mas possibilitara

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44

Parikh, Rinku Pankaj. "Simulation-based design, optimization, and control of silicon carbide and gallium nitride thin film chemical vapor deposition reactor systems." College Park, Md. : University of Maryland, 2006. http://hdl.handle.net/1903/3976.

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Thesis (Ph. D.) -- University of Maryland, College Park, 2006.<br>Thesis research directed by: Chemical Engineering. Title from t.p. of PDF. Includes bibliographical references. Published by UMI Dissertation Services, Ann Arbor, Mich. Also available in paper.

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Oliveira, Alessandro Ricardo de. "Estudo da viabilidade de fabricação de dispositivos semicondutores baseados em filmes de carbeto de silício crescidos por PECVD." Universidade de São Paulo, 2006. http://www.teses.usp.br/teses/disponiveis/3/3140/tde-08122006-142624/.

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Neste trabalho é estudada a viabilidade de produção de dispositivos eletrônicos baseados em filmes semicondutores de carbeto de silício estequiométrico (a-Si0,5C0,5:H) obtidos por deposição química por vapor assistida por plasma, PECVD. A proposta do projeto envolve a realização de uma série de trabalhos que permitam avaliar as potencialidades do a-SiC:H para a fabricação de dispositivos semicondutores simples. Deste modo, desenvolvemos as principais etapas para a construção de dispositivos, as quais envolveram a dopagem elétrica por diferentes técnicas com a utilização de diferentes elementos

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46

Carbaugh, Daniel J. "Growth and Characterization of Silicon-Based Dielectrics using Plasma Enhanced Chemical Vapor Deposition." Ohio University / OhioLINK, 2014. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1406644891.

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47

Kaneko, Mitsuaki. "Strain-Controlled AlN Growth on SiC Substrates." 京都大学 (Kyoto University), 2016. http://hdl.handle.net/2433/217172.

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48

Lin, Limin. "A study of gate dielectrics for wide-bandgap semiconductors GaN & SiC /." Click to view the E-thesis via HKUTO, 2007. http://sunzi.lib.hku.hk/hkuto/record/B3932252X.

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Dai, Xianqi, and 戴憲起. "A study of the structural properties of SiC and GaN surfaces and theirinterfaces by first principle total energy calculation." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2003. http://hub.hku.hk/bib/B31244130.

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Lin, Limin, and 林立旻. "A study of gate dielectrics for wide-bandgap semiconductors: GaN & SiC." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2007. http://hub.hku.hk/bib/B3932252X.

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