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Dissertations / Theses on the topic 'PECVD'

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Published: 4 June 2021
Last updated: 25 July 2025

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1

Bohlen, Brandon Scott. "PECVD grown DBR for microcavity OLED sensor." [Ames, Iowa : Iowa State University], 2007.

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2

Sanchez, Mathon Gustavo. "Piezoelectric aluminum nitride thin films by PECVD." Limoges, 2009. https://aurore.unilim.fr/theses/nxfile/default/9224e391-3c48-4c10-9166-c2a2bed3c5f4/blobholder:0/2009LIMO4007.pdf.

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Des couches minces polycristallines d'AIN ont été réalisées en utilisant une technique CVD assistée par plasma micro-onde. Les paramètres, distance plasma - injecteur, température du substrat, polarisation RF du porte - substrat ont été optimisés. Il a été possible de contrôler l’orientation préférentielle <0001> ou <1010>, intéressantes pour des applications piézoélectriques. Les mécanismes de croissance qui ont conduit au développement des microstructures dans les différentes conditions ont été expliqués. La comparaison avec une technique PVD a permis d’enricher la discussion. Le
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3

Mäder, Gerrit. "Atmosphärendruck-Plasma-Beschichtungsreaktoren." Stuttgart Fraunhofer-IRB-Verl, 2008. http://d-nb.info/991762533/04.

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4

Ceiler, Martin Francis Jr. "The composition and properties of PECVD silicon dioxide." Thesis, Georgia Institute of Technology, 1993. http://hdl.handle.net/1853/11864.

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5

Dominguez, Bucio Thalia. "NH3-free PECVD silicon nitride for photonic applications." Thesis, University of Southampton, 2018. https://eprints.soton.ac.uk/422874/.

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Silicon Photonics has open the possibility of developing multilayer platforms based on complementary metal-oxide semiconductors compatible materials that have the potential to provide the density of integration required to fabricate complex photonic circuits. Amongst these materials, silicon nitride (SiN) has drawn attention due to its fabrication flexibility and advantageous intrinsic properties that can be tailored to fulfil the requirements of different linear and non-linear photonic applications covering the ultra-violet to mid-infrared wavelengths. Yet, the fabrication techniques typicall
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6

Rangel, Elidiane Cipriano. "Implantação iônica em filmes finos depositados por PECVD." [s.n.], 1999. http://repositorio.unicamp.br/jspui/handle/REPOSIP/278415.

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Orientador: Mario Antonio Bica de Moraes<br>Tese (doutorado) - Universidade Estadual de Campinas, Instituto de Fisica Gleb Wataghin<br>Made available in DSpace on 2018-07-26T03:43:23Z (GMT). No. of bitstreams: 1 Rangel_ElidianeCipriano_D.pdf: 787803 bytes, checksum: 0b3afb1a1012d775c5984bbf14f79319 (MD5) Previous issue date: 1999<br>Resumo: Neste trabalho, investigou-se a influência da implantação iônica sobre as propriedades de filmes finos de polímero depositados a partir de plasmas de radiofrequência (40 MHz, 70 W) de dois compostos orgânicos (acetileno e benzeno) e de suas misturas com g
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7

Wu, Lingling. "Surface processing by RFI PECVD and RFI PSII." W&M ScholarWorks, 2000. https://scholarworks.wm.edu/etd/1539623997.

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An RFI plasma enhanced chemical vapor deposition (PECVD) system and a large-scale RF plasma source immersion ion implantation (PSII) system were designed and built to study two forms of 3-D surface processing, PECVD and PSII. Using the RFI PECVD system, Ti-6Al-4V substrates were coated with diamond-like carbon films with excellent tribological and optical properties. as an innovation, variable angle spectroscopic ellipsometry (VASE) was successfully applied for non-destructive, 3-D, large-area tribological coatings quality investigation.;Based on the experience with the RFI PECVD system, a lar
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8

CHAKRAVARTY, SRINIVAS L. N. "DEVELOPMENT OF SCRATCH RESISTANT PECVD SILICA-LIKE FILMS." University of Cincinnati / OhioLINK, 2000. http://rave.ohiolink.edu/etdc/view?acc_num=ucin973542599.

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9

Zhu, Mingyao. "Carbon nanosheets and carbon nanotubes by RF PECVD." W&M ScholarWorks, 2006. https://scholarworks.wm.edu/etd/1539623509.

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A planar antenna RF plasma enhanced chemical vapor deposition apparatus was built for carbon nanostructure syntheses. When operated in inductive and capacitive plasma discharging modes, two carbon nanostructures, carbon nanotube (CNT) and carbon nanosheet (CNS), were synthesized, respectively.;A nanosphere lithography method was developed and used to prepare catalyst patterns for CNT growth. Using capacitively coupled C2H2/NH 3 plasma, randomly oriented CNT were synthesized on Ni dot patterned Si substrates. Aligned CNT arrays were grown on SiO2 coated Si substrates, using both C2H2/NH3 and CH
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10

Hartel, Andreas Markus [Verfasser], and Margit [Akademischer Betreuer] Zacharias. "Structural and optical properties of PECVD grown silicon nanocrystals embedded in SiOxNy matrix = Strukturelle und Optische Eigenschaften mittels PECVD hergestellter Silicium Nanokristalle." Freiburg : Universität, 2013. http://d-nb.info/1114995673/34.

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11

Schindhelm, Jessica [Verfasser]. "Untersuchungen an PVD-PECVD-Kombinationsschichtsystemen auf Stahl / Jessica Schindhelm." Aachen : Shaker, 2011. http://d-nb.info/1074087836/34.

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12

Chen, Wan Lam Florence Photovoltaics &amp Renewable Energy Engineering Faculty of Engineering UNSW. "PECVD silicon nitride for n-type silicon solar cells." Publisher:University of New South Wales. Photovoltaics & Renewable Energy Engineering, 2008. http://handle.unsw.edu.au/1959.4/41277.

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The cost of crystalline silicon solar cells must be reduced in order for photovoltaics to be widely accepted as an economically viable means of electricity generation and be used on a larger scale across the world. There are several ways to achieve cost reduction, such as using thinner silicon substrates, lowering the thermal budget of the processes, and improving the efficiency of solar cells. This thesis examines the use of plasma enhanced chemical vapour deposited silicon nitride to address the criteria of cost reduction for n-type crystalline silicon solar cells. It focuses on the surface
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13

Amorim, Hermes Antonio de. "Caracterização de filmes finos de carbono depositados por PECVD." [s.n.], 1995. http://repositorio.unicamp.br/jspui/handle/REPOSIP/261359.

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Orientador: Edmundo da Silva Braga<br>Dissertação (mestrado) - Universidade Estadual de Campinas, Faculdade de Engenharia Eletrica<br>Made available in DSpace on 2018-07-20T14:57:33Z (GMT). No. of bitstreams: 1 Amorim_HermesAntoniode_M.pdf: 3926898 bytes, checksum: 445bd487145c83bb548a91a8f4d40295 (MD5) Previous issue date: 1995<br>Resumo: Neste trabalho é apresentado um estudo sobre a obtenção de filmes finos de carbono por deposição química a partir da fase de vapor assistida por plasma de RF. (RF-PECVD), com posterior caracterização dos mesmos através de diferentes técnicas. Inicialmente
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14

Antunes, Vinícius Gabriel 1984. "Deposição e caracterização físico-química de filmes finos nanoestruturados (nanocompósitos) contendo Ti, C, N e O, Obtidos a partir de um precursor líquido (Ti(OC2H5)4)." [s.n.], 2014. http://repositorio.unicamp.br/jspui/handle/REPOSIP/276978.

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Orientador: Fernando Alvarez<br>Dissertação (mestrado) - Universidade Estadual de Campinas, Instituto de Física Gleb Wataghin<br>Made available in DSpace on 2018-08-24T22:24:16Z (GMT). No. of bitstreams: 1 Antunes_ViniciusGabriel_M.pdf: 3019304 bytes, checksum: 07f935b74d9527a192ce26b38e17afda (MD5) Previous issue date: 2014<br>Resumo: Os tratamentos de superfície a plasma são amplamente usados em diversas áreas de tecnologia, tais como: indústria metalmecânica, microeletrônica, plástico e medicina, para o crescimento de filmes finos, camadas protetoras em instrumentos e ferramentas de corte
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15

Grant, David James. "Bottom-Gate TFTs With Channel Layer Deposited by Pulsed PECVD." Thesis, University of Waterloo, 2004. http://hdl.handle.net/10012/805.

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Nanocrystalline silicon (nc-Si:H) is a promising material for Thin-Film Transistors (TFTs) offering potentially higher mobilities and improved stability over hydrogenated amorphous silicon (a-Si:H). The slow growth rate of nc-Si:H can be overcome by using pulsed Plasma-Enhanced Chemical Vapour Deposition (PECVD). Pulsed PECVD also reduces powder particle formation in the plasma and provides added degrees of freedom for process optimization. Unlike high frequency PECVD, pulsed PECVD can be scaled to deposit films over large areas with no reduction in performance. For this thesis, si
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16

Spooner, Marc, and mas109@rsphysse anu edu au. "The Application and Limitations of PECVD for Silicon-based Photonics." The Australian National University. Research School of Physical Sciences and Engineering, 2006. http://thesis.anu.edu.au./public/adt-ANU20070315.043442.

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This thesis presents results on the applications and limitations of plasma enhanced chemical vapour deposition for silicon-based photonics, with an emphasis on optical microcavities for the control of light emission from silicon nanocrystals. ¶ Silicon nanocrystals were formed by precipitation and growth within Si-rich oxide layers (SiOx) deposited by plasma enhanced chemical vapour deposition. The films were found to exhibit strong room temperature photoluminescence, with the optimum emission depending on the composition and processing of the films. The strongest emission was achieved for fi
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17

Martins, Gustavo da Silva Pires. "Filtros interferenciais construídos com dielétricos depositados pela técnica de PECVD." Universidade de São Paulo, 2008. http://www.teses.usp.br/teses/disponiveis/3/3140/tde-11082008-215318/.

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Neste trabalho é apresentada a simulação, fabricação e caracterização de filtros interferenciais empregando películas dielétricas amorfas depositadas pela técnica de deposição a vapor assistida por plasma (PECVD) sobre substratos de silício e de Corning Glass (7059). Os dispositivos ópticos foram construídos usando-se processos padrões de microeletrônica e consistiram em camadas periódicas com espessura e índice de refração apropriados para produzir picos da atenuação na transmitância da luz na região visível. Simulações numéricas precedentes foram realizadas baseando-se nas características óp
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18

Viard, Jocelyn. "Caractérisations de couches minces d'oxynitrures de silicium élaborées par PECVD." Montpellier 2, 1996. http://www.theses.fr/1996MON20034.

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Realise en collaboration avec la societe essilor, l'objectif de ces travaux etait l'etude des films d'oxynitrures de silicium realises par pecvd, en tant que constituants de couches antireflet sur des substrats de verres polymeres. Les films minces sont elabores a partir de sih#4, n#2o, nh#3. La puissance et la pression restent fixes, seule varie la composition de la phase gazeuse en gardant un debit total constant. Les diverses methodes utilisees (meb, xps-aes, reflectometrie des rayons x rasants, ftir, ellipsometrie, nanoindentation) ont permis de caracteriser ces films du point de vue physi
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19

Point, Sébastien. "Synthèse par PECVD et caractérisation de nanotubes de carbone orientés." Nantes, 2005. http://www.theses.fr/2005NANT2024.

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Ce travail est consacré à l'étude de la synthèse de nanotubes de carbone (NTC) orientés par plasma froid basse pression excité par résonance cyclotronique électronique (ECR PECVD). Ces travaux portent également sur la caractérisation structurale et physico-chimique des NTC. Les paramètres explorés sont la nature des catalyseurs (Ni, Fe, Pd) déposés par pulvérisation plasma (PVD), la température du substrat, la composition du gaz plasmagène (C2H2/NH3 ou C2H2/H2). Ce procédé ECR PECVD permet la synthèse de NTC dès 550°C. La microscopie électronique à balayage et à transmission (MEB, MET) renseig
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20

Belin, Joffrey. "Fabrication de filtres interférentiels par dépôt PECVD pour l'éclairage LED." Mémoire, Université de Sherbrooke, 2017. http://hdl.handle.net/11143/10670.

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Grâce à leur haute efficacité et leur durée de vie plus longue, les LED sont de plus en plus utilisées pour l’éclairage, et particulièrement depuis ces dernières années, pour l’éclairage public. Toutefois, le spectre d’émission d’une LED diffère de celui d’une ampoule à incandescence ou à décharge, avec notamment des longueurs d’onde dont l’amplitude est plus élevée dans le domaine du bleu. Il a été démontré que ces longueurs d’onde bleues réduisent la sécrétion de mélatonine, une hormone qui, en plus de ses propriétés anti-oxydantes et anti- cancérigènes, permet d
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21

Blažková, Naďa. "Povrchová topografie a-CSi:H vrstev připravených v kontinuálním režimu PECVD." Master's thesis, Vysoké učení technické v Brně. Fakulta chemická, 2018. http://www.nusl.cz/ntk/nusl-376884.

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The thesis describes surface topography of a-CSi:H films deposited by continuous wave plasma enhanced chemical vapor deposition (PECVD) based on tetravinylsilane monomer (TVS). Thin films are completely used in many fields of modern technologies and their physical and mechanical properties are affected by thin film preparation techniques. In this thesis the thin films were deposited by PECVD method on silicon wafers with the pure TVS monomer. Deposited samples were topographically described and analyzed using atomic force microscopy (AFM). The main characteristics which were described are RMS
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22

Spooner, Marc. "The application and limitations of PECVD for silicon-based photonics /." View thesis entry in Australian Digital Program, 2005. http://thesis.anu.edu.au/public/adt-ANU20070315.043442/index.html.

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23

Bouchkour, Zakaria. "Croissance et caractérisation de nanostructures de nitrure d’aluminium par PECVD." Limoges, 2013. https://aurore.unilim.fr/theses/nxfile/default/b7f7a18c-51f9-47ff-930e-e1cb6f2cefef/blobholder:0/2013LIMO4003.pdf.

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Le nitrure d’aluminium (AlN) est un semi-conducteur suscitant un vif intérêt pour l’optoélectronique. Avec une bande interdite de 6,2 eV, il pourrait permettre d’atteindre les longueurs d’onde de l’UV profond. L’objectif de ce travail de thèse est d’obtenir, de comprendre et de maîtriser la croissance (densité, taille) de nano-ilots d’AlN élaborés par PECVD (dépôt chimique en phase vapeur assisté par plasma) sur des substrats monocristallins plans puis nanostructurés. Un travail de maîtrise du procédé et d’optimisation des conditions opératoires pour l’obtention de nano-ilots d’AlN a été néces
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24

Benmessaoud, Alí. "Caracterización de subóxidos de silicio obtenidos por las técnicas de PECVD." Doctoral thesis, Universitat Autònoma de Barcelona, 2001. http://hdl.handle.net/10803/3336.

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Se ha escogido la técnica PECVD para obtener depósitos de subóxido de silicio, SiOx, de espesores del orden de la micra, sobre substratos de Si de dos pulgadas. Hemos logrado depósitos con contenidos de oxígeno entre 1.3 y 2.0, y un intervalo de índices de refracción comprendidos entre 1.96 (próximo al Si3N4) y 1.46 (SiO2). La estructura (en particular, la porosidad), uniformidad y tensión de las capas son mejores cuanto menor es el contenido de oxígeno. Además, las capas crecidas contienen impurezas en forma de enlaces Si-H, N-H, Si-OH y H2O. El contenido de impurezas varia de forma gradual
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25

Kurapov, Denis. "Structure evolution, properties, and application of alumina films deposited by PECVD /." Aachen : Shaker, 2005. http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&doc_number=014643764&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA.

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26

Saint-Cast, Pierre [Verfasser]. "Passivation of Si Surfaces by PECVD Aluminum Oxide / Pierre Saint-Cast." Konstanz : Bibliothek der Universität Konstanz, 2012. http://d-nb.info/1048524833/34.

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27

Rind, M. Akhtar. "Photovoltaic applications of Si and Ge thin films deposited by PECVD." Thesis, University of Southampton, 2014. https://eprints.soton.ac.uk/370453/.

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This thesis represents a systematic study of amorphous silicon microcrystalline silicon and germanium thin films, and a-Si:H thin film solar cells fabricated using an OPT plasma lab 100 RF PECVD system carried out with a view to studying novel lighttrapping structures for thin film solar cells and novel IR photovoltaic cells. The work includes the optimisation of amorphous based single layers by optical and electrical characterisation, their doping and the fabrication and optimisation of single junction solar cells. These developments were extended to include deposition of microcrystalline and
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Gavrilov, N. V., and A. S. Mamaev. "DLC deposition by PECVD at plasma cathode based low-pressure discharge." Thesis, Видавництво СумДУ, 2011. http://essuir.sumdu.edu.ua/handle/123456789/20765.

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The characteristics of coatings prepared by acetylene decomposition in nonself-sustained discharge with a plasma cathode have been studied. The initial energy of electrons injected into the plasma was 0,1 – 0,7 keV, energy of ions bombarding the coating was 0,1 – 0,7 keV and the pressure of Ar + C2H2 gas mixture was 0,2 – 1 Pa. Microhardness and wear resistance of coatings were measured by methods of kinetic indentation and ball abrasion. The coatings with high microhardness (40 – 60 GPa) and high wear resistance were deposited on conditions that ion energy exceeded 300 eV. It was shown tha
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Yu, Pei-chi, and 游佩琪. "Preparation of superhydrophobic films by PECVD." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/78903297735192312861.

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碩士<br>國立中央大學<br>化學工程與材料工程研究所<br>96<br>Preparation of superhydrophobic films by plasma enhance chemical vapor deposition method using C6F6 as the monomer has been developed. The films were prepared by C6F6 plasma in continuous wave and pulsed wave. The effects of power and deposition position on the films were investigated by using SEM、AFM、FTIR and XPS. In continuous wave, the smooth hydrophobic films was obtained. And with increasing power, the degree of dissociation monomer was increased. With decreasing the distance from power electrode, the radicals were increased. The films prepared with l
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Chen, Cheng Hsien, and 陳承先. "Low Temperature Epitaxial Growth by PECVD." Thesis, 1993. http://ndltd.ncl.edu.tw/handle/55004681419833903652.

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Lin, Wen-Mei, and 林文美. "PECVD SiON for Integrated Optical Microsensor." Thesis, 1997. http://ndltd.ncl.edu.tw/handle/17850513106381610184.

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碩士<br>國立清華大學<br>電機工程學系<br>85<br>The integrated optical sensor is fabricated on a Si substrate with a thermal oxide as the buffer layer , a PECVD SiON as the guiding layer , and a SiOx stripas the wave confining cap layer . Since SiON layer is the most important layer in the device , we have studied the deposition technology and characterized the physical and optical properties of the deposited film . SiON films suitable for integrated optical sensor were obtained .
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Lu, Chih-Cheng, and 盧峙丞. "Characterizations of PECVD Dielectric Films on In0.53Ga0.47As." Thesis, 1999. http://ndltd.ncl.edu.tw/handle/63875726278165592595.

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碩士<br>國立清華大學<br>電機工程學系<br>87<br>Dielectric films of SiOx and SiNx by plasma enchanced chemical vapor deposition (PECVD) have been widely used in the fabrication of microelectronic devices. They have been used for insulation between conducting layers, for diffusion and ion implantation masks, for capping doped films to prevent the loss of dopants, and for passivation to protect devices from impurities, moisture, and scratches. Besides, dielectric films have been deposited on Ⅲ-Ⅴ compound semiconductor as a promising gate insulator for MISFETs. Characteristics of Ⅲ-Ⅴ compound semiconductor have
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Chen, Chih-Rung, and 陳志榮. "Preparation of hydrophobic hard coating via PECVD." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/27357765406715941582.

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碩士<br>國立中央大學<br>化學工程與材料工程研究所<br>96<br>Preparation of uniform silica films with high mechanical properties by plasma enhanced chemical vapor deposition (PECVD) at room temperature has been developed. At first, plasma parameters, different position, substrate temperature, and amount of oxygen were investigated using diethoxydimethylsilane (DEODMS) as monomer. In addition, these above films were treated by different plasma to study the influence of surface treatment on chemical structure and properties of films. On the other hand, oxygen plasma was also utilized to etch substrates to make rough s
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Liao, Wen-Ing, and 廖文英. "Methanol oxidation on PECVD modified Pt electrodes." Thesis, 1996. http://ndltd.ncl.edu.tw/handle/51570535091433480001.

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Tai, Hsien-Cheng, and 戴賢政. "Fault Detection and Diagnosis of PECVD Equipment." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/37671612488716902714.

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碩士<br>中原大學<br>機械工程研究所<br>95<br>The plasma-enhanced chemical vapor deposition (PECVD) process is always an important technology for the thin-film deposition in the semiconductor and TFT-LCD fabrications. Plasma, in PECVD, is a key parameter for the success of deposition. In case the plasma is subject to any abnormal influences such as deviant pressure, faulty RF generator, unstable gas supply, or abnormal deposition environment, it may lead to equipment breakdown and cost loss. Certainly, the overall equipment effectiveness (OEE) reduces. Therefore, this thesis presents a systematic approach of
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Bienger, Pierre Spieß Lothar. "Reproduzierbare Bereitstellung verschiedener Precursoren für den PECVD-Prozess /." 2008. http://www.gbv.de/dms/ilmenau/abs/573883041bieng.txt.

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Li, Jian-zheng, and 李建政. "Study on DLC Coating Polycarbonate Substrate by PECVD." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/76159829592578999391.

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碩士<br>國立中山大學<br>電機工程學系研究所<br>92<br>The purpose of this research was to deposit the protective diamond-like carbon (DLC) films on polycarbonate substrates for optical applications. In this study, by using the PECVD method is the better way to deposit DLC film on polycarbonate substrates since the whole process were performed at low temperature to avoiding any degradation of the adhesion of DLC film on polycarbonate substrates occurred at high temperature. In order to further increase the adhesion between the polycarbonate substrates and the DLC film, we deposited the SiO2 layer as an interlaye
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"Caracterização de filmes finos de carbono depositados por PECVD." Tese, Biblioteca Digital da Unicamp, 1995. http://libdigi.unicamp.br/document/?code=vtls000094852.

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Cheng, Pen-Cheng, and 鄭本誠. "Installation and Testing of a Home-made PECVD System." Thesis, 1995. http://ndltd.ncl.edu.tw/handle/93370658928504777197.

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Kuo, Yu-An, and 郭育安. "Fabrication of ZnO (002) thin films grown by PECVD." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/f99fs4.

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碩士<br>國立臺北科技大學<br>機電整合研究所<br>98<br>The wurtzite ZnO thin films with c-axis (0002) preferred orientation have been successfully grown on the Si(100) and glass substrates by plasma enhanced chemical vapor deposition (PECVD) using diethylzinc (DEZn) liquid and carbon dioxide (CO2) gas as the Zn and O sources, respectively. This thesis is focused on the synthesized conditions for forming (0002) textured ZnO films by varying the fabrication parameters during film growth process. The changed parameters in the synthesized processes of ZnO phase including the CO2 gas flows (6~20 sccm), substrate tempe
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Ying, Chih-Hung, and 應志弘. "Investigation of fluorinated amorphous carbon films deposited by PECVD." Thesis, 2001. http://ndltd.ncl.edu.tw/handle/99264378662262762676.

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碩士<br>國立成功大學<br>材料科學及工程學系<br>89<br>Interconnect delay is a factor of performance limiting for ULSI circuits when feature size is scaled to deep submicron region. Using low dielectric constant materials for the interlayer insulator is an effective way to solve the RC time delay. Fluorinated amorphous carbon films (a-C:F) is one of intensively studied low-k materials concerning its basic properties, thermal stability and integration-related issue. In this paper, we have investigated effects of process parameter to the properties of a-C:F. The results shows that the dielectric constant
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CHEN, HONG-TING, and 沈宏庭. "Encapsulation study of a-Si/GaAs grown by PECVD." Thesis, 1987. http://ndltd.ncl.edu.tw/handle/01450238965688342715.

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CHEN, IAN-WEI, and 陳彥瑋. "Investigation on Silicon Heterojunction Layers Prepared by RF-PECVD." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/45480178292569085599.

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碩士<br>國立臺灣科技大學<br>化學工程系<br>98<br>In this thies, the intrinsic amorphous silicon (a-Si:H) were deposited on n-type monocrystalline silicon by RF PECVD, including p type amorphous silicon and n type amorphous silicon, we discuss optimization procedure of silicon heterojunction(SHJ). The TMB and TBP were used as the doping gases. We present implied open circuit voltage and effective lifetime in silicon heterojunction as the indicators. The thin intrinsic a-Si:H were prepared by SiH4 and H2 under different dilution ratio. It is found that a better interface passivation of SHJ was obtained by 15 n
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Chen, Zong-lin, and 陳宗麟. "Microcrystalline Silicon Films Prepared by VHF SiH4-PECVD System." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/13271612605960491113.

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碩士<br>國立臺灣科技大學<br>化學工程系<br>96<br>In this thesis, the hydrogenated microcrystalline silicon (μc-Si:H) intrinsic layer was deposited by very-high-frequency (VHF) plasma-enhanced chemical vapor deposition (PECVD). The influence of deposition conditions on VHF plasma were characterized by in-situ optical emission spectroscopy (OES). The effect of varied power density, reaction pressure, distance between parallel electrodes and diluted ratio of hydrogen gases were also investigated. A close relationship between OES intensity and thin film structure was found. Therefore, the optimal deposition condi
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Lin, Qi-Fa, and 林啟發. "Chemical Mechanical Polishing of PECVD Dielectrics：Characterization and Processs Integration." Thesis, 1996. http://ndltd.ncl.edu.tw/handle/08396109180397390113.

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Lin, Puru, and 林溥如. "Design and Fabrication of PECVD SiOxNy Array Waveguide Grating." Thesis, 2003. http://ndltd.ncl.edu.tw/handle/84701740135536890177.

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Jwo, Jyh-Neng, and 卓至能. "Properties SiNxOy on III-V Compounds by PECVD Techniques." Thesis, 1993. http://ndltd.ncl.edu.tw/handle/69327534562508361253.

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碩士<br>國立交通大學<br>電子研究所<br>81<br>Silicon nitride obtained by plasma enhanced chemical vapor deposition (PECVD) is now widely used in III-V semiconductor device technology. However the plasma silicon nitride layer normally has a quite high mechanical stress and poor relative heat treatment. So, silicon oxynitride film prepared by PECVD have recently gained interest as well as interlayer dielectric because of their lower hydrogen content and lower mechanical stress as compared to silicon nitrid
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Ji, He-cheng, and 紀和成. "Simulate of PECVD Chamber Clean Using Remote Plasma System." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/79153624133876664394.

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碩士<br>國立高雄大學<br>電機工程學系碩士班<br>103<br>Thin film deposition is one of the most important processes in fabricating semiconductor devices. An automatic deposition system usually equiped with self-cleaning function; the system can clean a vacuum chamber after chemical reaction inside the chamber. Remote plasma system usually generates plasma by decomposing argon via buildt-in microwave generation system and the plasma thus ironize NF3 into nitrogen and fluoride ion that can react with silicon dioxide residue around the chamber to achieve self-clean. Some semiconductor manufacturing companies, such a
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Li, Handong. "Nano-structured PECVD silicon films and their device applications." 2004. http://etda.libraries.psu.edu/theses/approved/WorldWideIndex/ETD-498/index.html.

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XU, SHI-CHANG, and 徐世昌. "PECVD silicon dioxide and hydrogenated amorphous thin film transistor." Thesis, 1992. http://ndltd.ncl.edu.tw/handle/12340392969036141889.

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