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Dissertations / Theses on the topic 'Phase change memory GST'

Author: Grafiati
Published: 25 May 2024
Last updated: 31 July 2025

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1

Giovanardi, Fabio <1984&gt. "Analysis of charge-transport properties in GST materials for next generation phase-change memory devices." Doctoral thesis, Alma Mater Studiorum - Università di Bologna, 2013. http://amsdottorato.unibo.it/5583/4/giovanardi_fabio_tesi.pdf.

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The quest for universal memory is driving the rapid development of memories with superior all-round capabilities in non-volatility, high speed, high endurance and low power. The memory subsystem accounts for a significant cost and power budget of a computer system. Current DRAM-based main memory systems are starting to hit the power and cost limit. To resolve this issue the industry is improving existing technologies such as Flash and exploring new ones. Among those new technologies is the Phase Change Memory (PCM), which overcomes some of the shortcomings of the Flash such as durability and
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2

Giovanardi, Fabio <1984&gt. "Analysis of charge-transport properties in GST materials for next generation phase-change memory devices." Doctoral thesis, Alma Mater Studiorum - Università di Bologna, 2013. http://amsdottorato.unibo.it/5583/.

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The quest for universal memory is driving the rapid development of memories with superior all-round capabilities in non-volatility, high speed, high endurance and low power. The memory subsystem accounts for a significant cost and power budget of a computer system. Current DRAM-based main memory systems are starting to hit the power and cost limit. To resolve this issue the industry is improving existing technologies such as Flash and exploring new ones. Among those new technologies is the Phase Change Memory (PCM), which overcomes some of the shortcomings of the Flash such as durability and
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3

Hernandez, Gerardo Rodriguez. "Study of mixed mode electro-optical operations of Ge2Sb2Te5." Thesis, University of Oxford, 2017. https://ora.ox.ac.uk/objects/uuid:5bb8c1f5-2f4b-4eb0-a61a-3978af04211f.

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Chalcogenide based Phase Change Materials are currently of great technological interest in the growing field of optoelectronics. Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> (GST) is the most widely studied phase change material, and it has been commercially used in both optical and electronic data storage applications, due to its ability to switch between two different atomic configurations, at high speed and with low power consumption, as well as its high optical and electrical contrast between amorphous and crystalline states. Despite its well-known optical and electrical properties, the oper
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4

Kiouseloglou, Athanasios. "Caractérisation et conception d' architectures basées sur des mémoires à changement de phase." Thesis, Université Grenoble Alpes (ComUE), 2015. http://www.theses.fr/2015GREAT128/document.

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Les mémoires à base de semi-conducteur sont indispensables pour les dispositifs électroniques actuels. La demande croissante pour des dispositifs mémoires fortement miniaturisées a entraîné le développement de mémoires non volatiles fiables qui sont utilisées dans des systèmes informatiques pour le stockage de données et qui sont capables d'atteindre des débits de données élevés, avec des niveaux de dissipation d'énergie équivalents voire moindres que ceux des technologies mémoires actuelles.Parmi les technologies de mémoires non-volatiles émergentes, les mémoires à changement de phase (PCM) s
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5

Sevison, Gary Alan. "Silicon Compatible Short-Wave Infrared Photonic Devices." University of Dayton / OhioLINK, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=dayton1523553057993197.

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6

Daoudi, Oumaima. "Les matériaux chalcogénures pour les futures générations des mémoires à changement de phase." Electronic Thesis or Diss., Université Grenoble Alpes, 2025. http://www.theses.fr/2025GRALY013.

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La mémoire à changement de phase (PCM) est une technologie non volatile mature quia démontré sa pertinence en termes de rapidité de programmation, de faible consommation d’énergie et de haute endurance. Le système ternaire GST (GST-225) est largement utilisé dans la PCM en raison de ses capacités de transition rapide et du contraste de résistivité important entre les états amorphe et cristallin. Toutefois, sa faible température de cristallisation ne répond pas aux exigences des applications embarquées. Les avancées en ingénierie des matériaux, en particulier l’enrichissement en Ge et de dopage
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7

Aboujaoude, Andrea E. "Nanopatterned Phase-Change Materials for High-Speed, Continuous Phase Modulation." University of Dayton / OhioLINK, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=dayton1538243834791942.

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8

Seong, Nak Hee. "A reliable, secure phase-change memory as a main memory." Diss., Georgia Institute of Technology, 2012. http://hdl.handle.net/1853/50123.

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The main objective of this research is to provide an efficient and reliable method for using multi-level cell (MLC) phase-change memory (PCM) as a main memory. As DRAM scaling approaches the physical limit, alternative memory technologies are being explored for future computing systems. Among them, PCM is the most mature with announced commercial products for NOR flash replacement. Its fast access latency and scalability have led researchers to investigate PCM as a feasible candidate for DRAM replacement. Moreover, the multi-level potential of PCM cells can enhance the scalability by increasin
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9

Huang, Bolong. "Theoretical study on phase change memory materials." Thesis, University of Cambridge, 2012. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.609986.

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10

Almoric, Jean. "Développement d'un nouvel instrument couplant FIB/SEM UHV et OTOF-SIMS à haute résolution spatiale pour la microélectronique et ses applications." Electronic Thesis or Diss., Aix-Marseille, 2021. http://www.theses.fr/2021AIXM0368.

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La spectrométrie de masse d’ion secondaire (SIMS) est probablement la technique d'analyse chimique la plus largement utilisée en science des semi-conducteurs et en métallurgie en raison de sa sensibilité ultime à tous les éléments notamment au plus légers. Avec la réduction de la taille des systèmes, l'imagerie chimique 3D haute résolution devient une condition préalable au développement de nouveaux matériaux. Dans cette thèse, nous rapportons le développement et l’optimisation d'un SIMS innovant implémenté dans un microscope électronique à balayage. L'équipement permet d’obtenir une cartograp
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11

Huang, Ruomeng. "Confined nanoscale chalcogenide phase change material and memory." Thesis, University of Southampton, 2015. https://eprints.soton.ac.uk/379321/.

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The miniaturization of memory devices has been one of the major driving forces in the exploration of ever faster, smaller and more efficient memory concepts. Among all the competitors for the next generation of non-volatile memory, phase change materials based random access memory has emerged as a leading candidate. A better understanding of nanoscale properties of phase change materials and the ability of selective depositing them into confined nanostructures are substantially important in the long march towards smaller more densely packed memory bits. A novel top-down spacer etch technique h
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12

Gao, Shen. "Transaction logging and recovery on phase-change memory." HKBU Institutional Repository, 2013. http://repository.hkbu.edu.hk/etd_ra/1549.

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13

Soares, Bruno Flavio Nogueira de Sousa. "Nanoparticle phase change functionality for photonic switching and optical memory." Thesis, University of Southampton, 2007. https://eprints.soton.ac.uk/427052/.

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Nanoscale photonic functionalities based on light-induced structural transitions in nanoparticles have been investigated, and it hag been experimentally shown that nanoparticles can act as both low power nanoscale optical switches and as resonator-less optical memory elements. A system for in-situ growth and characterization of gallium nanoparticles, which combined technologies including atomic-beam deposition, ultra-high vacuum, cryogenics, and sophisticated fibre instrumentation including diode and ultra-fast laaers, has been developed. Optica,l switching has been observed in a gallium nanop
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14

El, Hassan Nemat Hassan Ahmed. "Development of phase change memory cell electrical circuit model for non-volatile multistate memory device." Thesis, University of Nottingham, 2017. http://eprints.nottingham.ac.uk/39646/.

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Phase change memory (PCM) is an emerging non-volatile memory technology that demonstrates promising performance characteristics. The presented research aims to study the feasibility of using resistive non-volatile PCM in embedded memory applications, and in bridging the performance gap in traditional memory hierarchy between volatile and non-volatile memories. The research studies the operation dynamics of PCM, including its electrical, thermal and physical properties; in order to determine its behaviour. A PCM cell circuit model is designed and simulated with the aid of SPICE tools (LTSPICE I
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15

Carria, Egidio. "Amorphous-Crystal Phase Transitions in Ge2Sb2Te5 and GexTe1-x alloys." Doctoral thesis, Università di Catania, 2012. http://hdl.handle.net/10761/933.

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Aim of this work was the investigation of the phase transitions in Ge2Sb2Te5 and GexTe1-x thin films. These alloys are of interest since they exhibit an excellent combination of electrical-optical and phase changing characteristics for memory applications. In particular we have focused our attention on the amorphous-crystal transition. We have then discussed the correlation between the local order in the amorphous network and the crystallization kinetics. To this aim we have modified the properties of the amorphous phase by laser and ion irradiation looking to the consequent variation in the p
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16

Barclay, Martin Jared. "Electrical switching properties of ternary and layered chalcogenide phase-change memory devices." [Boise, Idaho] : Boise State University, 2009. http://scholarworks.boisestate.edu/td/67/.

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17

Wang, Lei. "A study of terabit per square inch scanning probe phase change memory." Thesis, University of Exeter, 2009. http://hdl.handle.net/10036/87279.

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Scanning electrical probe-based storage using phase change materials is considered as a promising data storage technology due to its potential to meet future needs for ultra-high areal density, low-power, non-volatility, and rewritability. It is therefore important to understand and model the write, read and erase processes of this new technology, so that likely performance limits can be predicted and recording media and recording systems designed. Thus, this thesis presents a theoretical framework and associated computational model for write, read, and erase processes in electrical probe stor
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18

Simões, Patrício Manuel Vieira. "The influence of phase change on learning and memory in desert locusts." Thesis, University of Cambridge, 2012. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.610895.

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19

Hosseini, Peiman. "Phase-change and carbon based materials for advanced memory and computing devices." Thesis, University of Exeter, 2013. http://hdl.handle.net/10871/10122.

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The aggressive scaling of CMOS technology, to reduce device size while also increasing device performance, has reached a point where continuing improvement is becoming increasingly problematic and alternative routes for the development of future memory and processing devices may be necessary; in this thesis the use of phase-change and carbon based materials as one such alternative route is investigated. As pointed out by Ovshinsky [1, 2] some phase-change material should be capable of non-binary arithmetic processing, multi-value logic and biological (neuromorphic) type processing. In this the
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20

Balasubramanian, Mahesh. "Phase change memory : array development and sensing circuits using delta-sigma modulation /." [Boise, Idaho] : Boise State University, 2009. http://scholarworks.boisestate.edu/td/44/.

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21

Lu, Chih-Yuan. "Group III-selenides : new silicon compatible semiconducting materials for phase change memory applications /." Thesis, Connect to this title online; UW restricted, 2007. http://hdl.handle.net/1773/10610.

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22

Li, Jiayin. "ENERGY-AWARE OPTIMIZATION FOR EMBEDDED SYSTEMS WITH CHIP MULTIPROCESSOR AND PHASE-CHANGE MEMORY." UKnowledge, 2012. http://uknowledge.uky.edu/ece_etds/7.

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Over the last two decades, functions of the embedded systems have evolved from simple real-time control and monitoring to more complicated services. Embedded systems equipped with powerful chips can provide the performance that computationally demanding information processing applications need. However, due to the power issue, the easy way to gain increasing performance by scaling up chip frequencies is no longer feasible. Recently, low-power architecture designs have been the main trend in embedded system designs. In this dissertation, we present our approaches to attack the energy-related is
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23

Saleh, Subaie Jaffar. "High-throughput synthesis and screening of chalcogenide thin films for phase-change memory." Thesis, University of Southampton, 2017. https://eprints.soton.ac.uk/417809/.

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The limitations of Flash memory as an electronic storage medium have driven the development of newtechnologies. Amongst these, Phase-Change Random Access Memory (PCRAM) has emerged as a viable replacement for Flash due to its greater number of write cycles and faster write speeds. However, while phase-change materials have been known for over 50 years interest has only picked up over the past decade. This has created a gap in understanding of the structural and functional properties of these materials, which is only now being addressed one material at a time. The research presented here introd
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24

Nguyen, Huu tan. "Thermal Characterization of In-Sb-Te thin films for Phase Change Memory Application." Thesis, Bordeaux, 2015. http://www.theses.fr/2015BORD0112/document.

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Les matériaux à changement de phase (PCM) sont utilisés pour la réalisation de mémoire non volatile. Ces matériaux possèdent la particularité de passer d’un état cristallin à un état amorphe à l’aide d’une impulsion de chaleur, créant ainsi un processus propre au stockage de l’information. Les PCMs sont généralement basés sur des composés ternaires de type Ge-Sb-Te (GST) avec une température de transition de l’ordre de 125°C, rendent ces matériaux inutilisable dans le domaine de l’automobile et pour des applications militaires. Pour contourner cette limitation, le GST est remplacé par le compo
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25

NGUYEN, HUU TAN. "Thermal Characterization of In-Sb-Te thin films for phase change memory application." Doctoral thesis, Università degli Studi di Milano-Bicocca, 2015. http://hdl.handle.net/10281/98985.

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The aim of the present work is to measure the thermal conductivity of In-Sb-Te alloy (IST) with a varying quantity of Te. The material is deposited as a thin film using the Metal-Organic Chemical Vapour Deposition (MOCVD) technique. Changing slightly the deposition parameters leads to achieve the Te variation within the alloy. We measured also the thermal boundary resistances at the interfaces between the IST layer with dielectric (SiO2, Al2O3) and metallic (Pt) layers. The measurement of the thermal conductivity and TBR is performed in a broad temperature range from room temperature (RT) up t
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26

SELMO, SIMONE. "Functional analysis of In-based nanowires for low power phase change memory applications." Doctoral thesis, Università degli Studi di Milano-Bicocca, 2017. http://hdl.handle.net/10281/153247.

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Phase change memories (PCMs), based on chalcogenide alloys (mainly Ge2Sb2Te5), are the most promising candidate for the realization of “Storage Class Memories”, which would fill the gap between ‘‘operation’’ and ‘‘storage’’ memories. PCMs are also one of the few currently available technologies for the implementation of nanoeletronic synapses in high density neuromorphic systems. The main improvements needed in order to exploit the full potential of PCMs in these innovative applications are the reduction of the programming currents and power consumption, and further cell downscaling. Thanks to
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27

ABOU, EL KHEIR OMAR. "Atomistic simulations of Ge-rich GeSbTe alloys for phase change memories." Doctoral thesis, Università degli Studi di Milano-Bicocca, 2023. https://hdl.handle.net/10281/403657.

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Prototypical phase change compounds, typically based on GeSbTe (GST) alloys, display a crystallization temperature not suitable for embedded Phase Change Memories (ePCM) of interest for applications in the automotive sector. The search for an alternative material is thus a very active research field. Ge-rich GST alloys are emerging as promising materials for ePCM thanks to the higher thermal stability of their amorphous phase. Upon crystallization, Ge-rich GST alloys undergo a phase separation into Ge and other GST alloys. The segregation phenomena enhance the crystallization temperature (Tx),
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28

Rausch, Pascal [Verfasser]. "Investigations of binary and ternary phase change alloys for future memory applications / Pascal Rausch." Aachen : Hochschulbibliothek der Rheinisch-Westfälischen Technischen Hochschule Aachen, 2013. http://d-nb.info/1036240533/34.

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29

Skelton, Jonathan Michael. "Exploring computational modelling for the study of phase-change materials for digital-memory applications." Thesis, University of Cambridge, 2013. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.648375.

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30

Hayat, Hasan. "A study of the scaling and advanced functionality potential of phase change memory devices." Thesis, University of Exeter, 2016. http://hdl.handle.net/10871/26596.

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As traditional volatile and non-volatile data storage and memory technologies such as SRAM, DRAM, Flash and HDD face fundamental scaling challenges, scientists and engineers are forced to search for and develop alternative technologies for future electronic and computing systems that are relatively free from scaling issues, have lower power consumptions, higher storage densities, faster speeds, and can be easily integrated on-chip with microprocessor cores. This thesis focuses on the scaling and advanced functionality potential of one such memory technology i.e. Phase Change Memory (PCM), whic
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31

Vázquez, Diosdado Jorge Alberto. "A cellular automata approach for the simulation and development of advanced phase change memory devices." Thesis, University of Exeter, 2012. http://hdl.handle.net/10036/4141.

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Phase change devices in both optical and electrical formats have been subject of intense research since their discovery by Ovshinsky in the early 1960’s. They have revolutionized the technology of optical data storage and have very recently been adopted for non-volatile semiconductor memories. Their great success relies on their remarkable properties enabling high-speed, low power consumption and stable retention. Nevertheless, their full potential is still yet to be realized. Operations in electrical phase change devices rely on the large resistivity contrast between the crystalline (low resi
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32

Balasubramanian, Sanchayeni. "Improving Hard Disk Drive Write IO Performance with Phase Change Memory as a Buffer Cache." University of Cincinnati / OhioLINK, 2017. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1511881125562903.

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33

Betti, Beneventi Giovanni. "Characterization and modeling of phase-change memories." Thesis, Grenoble, 2011. http://www.theses.fr/2011GRENT089/document.

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La thèse de Giovanni BETTI BENEVENTI portes sur la caractérisation électrique et la modélisationphysique de dispositifs de mémoire non-volatile à changement de phase. Cette thèse a été effectuée dans le cadre d’une cotutelle avec l’Università degli Studi di Modena e Reggio Emilia (Italie).Le manuscrit en anglais comporte quatre chapitres précédés d’une introduction et terminés par uneconclusion générale.Le premier chapitre présent un résumé concernant l’état de l’art des mémoires a changement de phase. Le deuxième chapitre est consacré aux résultats de caractérisation matériau et électrique ob
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34

Bornhöfft, Manuel [Verfasser], Joachim [Akademischer Betreuer] Mayer, and Matthias [Akademischer Betreuer] Wuttig. "TEM/STEM investigations of phase change materials for non-volatile memory applications / Manuel Bornhöfft ; Joachim Mayer, Matthias Wuttig." Aachen : Universitätsbibliothek der RWTH Aachen, 2017. http://d-nb.info/1162498234/34.

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35

Simon, Mark Alexander. "Second Phase Filamentation and Bulk Conduction in Amorphous Thin Films." University of Toledo / OhioLINK, 2011. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1302207950.

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36

Garbin, Daniele. "Etude de la variabilité des technologies PCM et OxRAM pour leur utilisation en tant que synapses dans les systèmes neuromorphiques." Thesis, Université Grenoble Alpes (ComUE), 2015. http://www.theses.fr/2015GREAT133/document.

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Le cerveau humain est composé d’un grand nombre de réseaux neuraux interconnectés, dont les neurones et les synapses en sont les briques constitutives. Caractérisé par une faible consommation de puissance, de quelques Watts seulement, le cerveau humain est capable d’accomplir des tâches qui sont inaccessibles aux systèmes de calcul actuels, basés sur une architecture de type Von Neumann. La conception de systèmes neuromorphiques vise à réaliser une nouvelle génération de systèmes de calcul qui ne soit pas de type Von Neumann. L’utilisation de mémoire non-volatile innovantes en tant que synapse
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37

Wrachien, Nicola. "ADVANCED MEMORIES TO OVERCOME THE FLASH MEMORY WEAKNESSES: A RADIATION VIEWPOINT RELIABILITY STUDY." Doctoral thesis, Università degli studi di Padova, 2010. http://hdl.handle.net/11577/3426884.

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Currently the large majority of commercial Flash memories are based on the floating gate MOSFET. Over the last years, the continuous scaling of nonvolatile memories has pushed the Flash technology toward its limits, which affect both the functionality and the reliability of the memory cell. Several alternatives are currently being explored as possible replacements for floating gate memories (FGM). On one hand there are the ferroelectric memories, the phase change memories, and the magnetoresistive memories, which follow a completely new approach, integrating new materials, such as ferroelect
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38

Xu, Min. "Study of the Crystallization Dynamics and Threshold Voltage of Phase Change Materials for Use in Reconfigurable RF Switches and Non-volatile Memories." Research Showcase @ CMU, 2017. http://repository.cmu.edu/dissertations/803.

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Chalcogenide phase change (PC) materials can be reversibly transformed between the high resistivity (~ 1 Ω∙m) amorphous state (OFF-state) and low resistivity (~ 10-6 Ω∙m) crystalline state (ON-state) thermally, both are stable at the room temperature. This makes them well suited as reconfigurable RF switches and non-volatile memories. This work will present the understandings of two key characteristics of PC materials, the crystallization dynamics and the threshold voltage (Vth), as they determine performance limitations in these applications. Crystallization dynamics describe the correlations
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39

Cappella, Andrea. "Caractérisation thermique à haute température de couches minces pour mémoires à changement de phase depuis l'état solide jusqu'à l'état liquide." Thesis, Bordeaux 1, 2012. http://www.theses.fr/2012BOR14500/document.

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Ces travaux de thèse portent sur la caractérisation thermique à l’échelle micrométrique d’un alliage à base de tellure lorsque ce matériau se trouve à l’état fondu, à haute température. À cette fin, une cellule innovante d’emprisonnement du matériau fondu a été conçue, et mise en place. Des structures de tellure au volume du microlitre ont été déposées sur un substrat de silicium et recouverts par la suite d’une couche de protection capable de les emprisonner dans une matrice : silice amorphe et alumine amorphe. La technique de la Radiométrie Photothermique Modulée a été utilisée pour étudier
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40

Prasai, Binay K. "Theory and Experiment of Chalcogenide Materials." Ohio University / OhioLINK, 2013. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1374002400.

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41

Green, Craig Elkton. "Composite thermal capacitors for transient thermal management of multicore microprocessors." Diss., Georgia Institute of Technology, 2012. http://hdl.handle.net/1853/44772.

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While 3D stacked multi-processor technology offers the potential for significant computing advantages, these architectures also face the significant challenge of small, localized hotspots with very large heat fluxes due to the placement of asymmetric cores, heterogeneous devices and performance driven layouts. In this thesis, a new thermal management solution is introduced that seeks to maximize the performance of microprocessors with dynamically managed power profiles. To mitigate the non-uniformities in chip temperature profiles resulting from the dynamic power maps, solid-liquid phase chang
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42

Bayle, Raphaël. "Simulation des mécanismes de changement de phase dans des mémoires PCM avec la méthode multi-champ de phase." Thesis, Institut polytechnique de Paris, 2020. http://www.theses.fr/2020IPPAX035.

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Les mémoires à changement de phases ont basées sur la variation de résistance d’un petit volume de matériau à changement de phase, l'information binaire étant codée à travers la phase amorphe ou cristalline du matériau. Le changement de phase permettant leur programmation est induit par effet Joule sous l’application d’un courant électrique. L’alliageGe2Sb2Te5 est largement utilisé pour les mémoires à changement de phase, car il cristallise rapidement et sans changement de composition. Cependant, pour obtenir la fiabilité requise pour certaines applications à haute température, notamment dans
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43

Pigot, Corentin. "Caractérisation électrique et modélisation compacte de mémoires à changement de phase." Electronic Thesis or Diss., Aix-Marseille, 2019. http://www.theses.fr/2019AIXM0185.

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La mémoire à changement de phase (ou PCM) est considérée actuellement comme la plus mature des technologies émergentes susceptibles de pallier les limitations de la mémoire Flash-NOR pour le futur des applications embarquées. Afin de permettre la conception de circuits à base de PCM, l’utilisation d’outils tels que la simulation SPICE est nécessaire, impliquant le besoin de modèles compacts de PCM. Ces modèles doivent être rapides, continus, et précis ; à ce jour aucun modèle de la littérature ne remplit l’ensemble de ces exigences.L’objectif de cette thèse est de proposer un nouveau modèle co
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44

Schick, Vincent. "Caractérisation d’une mémoire à changement de phase : mesure de propriétés thermiques de couches minces à haute température." Thesis, Bordeaux 1, 2011. http://www.theses.fr/2011BOR14280/document.

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Les mémoires à changement de phase (PRAM) développées par l’industrie de la microélectronique utilisent la capacité d’un materiau chalcogénure à passer rapidement et de façon réversible d’une phase amorphe à une phase cristalline. Le passage de la phase amorphe à la phase cristalline s’accompagne d’un changement de la résistance électrique du matériau. La transition amorphe vers cristallin est obtenue par un chauffage qui porte la cellule mémoires au delà de la température de transition du verre. Le verre ternaire de chalcogène Ge2Sb2Te5 (GST-225) est probablement le matériau amené à être le p
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45

Navarro, Gabriele. "Analyse de la fiabilité de mémoires à changement de phase embarquées basées sur des matériaux innovants." Phd thesis, Université de Grenoble, 2013. http://tel.archives-ouvertes.fr/tel-01061792.

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Les Mémoires ont de plus en plus importance à l'époque actuelle, et sont fondamentales pour la définition de tous les systèmes électroniques avec lesquels nous entrons en contact dans notre vie quotidienne. Les mémoires non-volatiles (NVM), représentées par la technologie Flash, ont pu suivre jusqu'à présent l'effort à la miniaturisation pour satisfaire la demande croissante de densité de mémoire exigée par le marché. Cependant, la réduction de la taille du dispositif de mémoire est de plus en plus difficile et la complexité technologique demandé a augmenté le coût par octet. Dans ce contexte,
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46

Rosen, Gregory Todd. "X-ray Absorption Fine Spectroscopy of Amorphous Selenium Nanowires." Ohio University Honors Tutorial College / OhioLINK, 2010. http://rave.ohiolink.edu/etdc/view?acc_num=ouhonors1294448896.

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47

Gasperin, Alberto. "Advanced Non-Volatile Memories: Reliability and Ionizing Radiation Effects." Doctoral thesis, Università degli studi di Padova, 2008. http://hdl.handle.net/11577/3425599.

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Reliability study and investigation of ionizing radiation effects on advanced non-volatile memories. The memories addressed in this thesis are: nanocrystal memories, Phase Change Memories (PCM), and the Oxide-Nitride-Oxide stack. In the thesis there is also a brief description of the major interaction mechanisms between ionizing particles and electronic devices.
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48

Fontaine, Benjamin. "Développement de procédés innovants de gravure de matériaux chalcogénures pour des applications mémoires non-volatiles et photoniques." Electronic Thesis or Diss., Université Grenoble Alpes, 2024. http://www.theses.fr/2024GRALT030.

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Depuis plusieurs années, les applications mémoires se diversifient pour répondre aux besoins du marché semiconducteur en fort développement. Dans cette optique, de nouvelles technologies de mémoires ont émergé. Les mémoires à changement de phase (PCRAM) sont parmi les technologies les plus prometteuses à la fois pour les applications standalone et embarquées. Le matériau sur lequel repose cette technologie, le GST, alliage de germanium, d’antimoine et de tellure, soulève de nombreux défis lors de sa mise en forme.Ces travaux de thèse s’axent sur l’amélioration de la mise en forme du GST et plu
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49

Canvel, Yann. "Etude du procédé de gravure de l'alliage Ge-Sb-Te pour les mémoires à changement de phase." Thesis, Université Grenoble Alpes, 2020. http://www.theses.fr/2020GRALY017.

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Les mémoires ont très largement gagné en notoriété ces dernières années et sont désormais incontournables dans tous les systèmes électroniques avec lesquels nous interagissons dans la vie quotidienne. Pour pallier les limitations technologiques des mémoires traditionnelles, de nombreux acteurs industriels ont orienté leur développement vers les Mémoires à Changement de Phase (PCM). Le fonctionnement de cette technologie émergente repose principalement sur les propriétés d’un alliage chalcogénure type Ge-Sb-Te (GST). Selon la composition chimique du matériau GST, les caractéristiques de la mémo
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50

Aoukar, Manuela. "Dépôt de matériaux à changement de phase par PE-MOCVD à injection liquide pulsée pour des applications mémoires PCRAM." Thesis, Université Grenoble Alpes (ComUE), 2015. http://www.theses.fr/2015GREAT075/document.

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Les mémoires résistives PCRAM sont basées sur le passage rapide et réversible entre un état amorphe hautement résistif et un état cristallin faiblement résistif d’un matériau à changement de phase (PCM). Ces mémoires constituent un des candidats les plus prometteurs pour la nouvelle génération de mémoires non-volatiles grâce à un large éventail de propriétés uniques comme une vitesse de fonctionnement élevée, une capacité de stockage multi-niveaux sur plusieurs bits, une bonne endurance et une possibilité de miniaturisation poussée. Cependant, la nécessité d’utiliser des courants d’effacement
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