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Journal articles on the topic 'Phase Change Random Access Memory'

Author: Grafiati

Published: 4 June 2021

Last updated: 6 September 2023

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1

SONG, ZhiTang, LiangCai WU, Feng RAO, SongLin FENG, and XiLin ZHOU. "Study of phase change materials for phase change random access memory." SCIENTIA SINICA Physica, Mechanica & Astronomica 46, no. 10 (September 6, 2016): 107309. http://dx.doi.org/10.1360/sspma2016-00216.

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2

Raoux, S., G. W. Burr, M. J. Breitwisch, C. T. Rettner, Y. C. Chen, R. M. Shelby, M. Salinga, et al. "Phase-change random access memory: A scalable technology." IBM Journal of Research and Development 52, no. 4.5 (July 2008): 465–79. http://dx.doi.org/10.1147/rd.524.0465.

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3

Lee, Hock, textscShi Luping, textscZhao Rong, textscYang Hongxin, textscLim Kian Guan, textscLi Jianming, and textscChong Tow Chong. "Elevated-Confined Phase-Change Random Access Memory Cells." Japanese Journal of Applied Physics 49, no. 4 (April 20, 2010): 04DD16. http://dx.doi.org/10.1143/jjap.49.04dd16.

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4

Kim, Young-Tae, Young-Nam Hwang, Keun-Ho Lee, Se-Ho Lee, Chang-Wook Jeong, Su-Jin Ahn, Fai Yeung, et al. "Programming Characteristics of Phase Change Random Access Memory Using Phase Change Simulations." Japanese Journal of Applied Physics 44, no. 4B (April 21, 2005): 2701–5. http://dx.doi.org/10.1143/jjap.44.2701.

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5

Wang, Qiang, Gang Niu, Wei Ren, Ruobing Wang, Xiaogang Chen, Xi Li, Zuo‐Guang Ye, Ya‐Hong Xie, Sannian Song, and Zhitang Song. "Phase Change Random Access Memory for Neuro‐Inspired Computing." Advanced Electronic Materials 7, no. 6 (March 17, 2021): 2001241. http://dx.doi.org/10.1002/aelm.202001241.

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6

Kim, Sung Soon, Jun Hyun Bae, Woo Hyuck Do, Kyun Ho Lee, Young Tae Kim, Young Kwan Park, Jeong Taek Kong, and Hong Lim Lee. "Thermal Stress Model for Phase Change Random Access Memory." Solid State Phenomena 124-126 (June 2007): 37–40. http://dx.doi.org/10.4028/www.scientific.net/ssp.124-126.37.

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Thermal stress model considering the effect of phase transformation is proposed for Phase-Change Random Access Memory (PRAM). The results of simulation show that the high level of stress is generated on the junction where Ge2Sb2Te5(GST), TiN and SiO2 meet together. The high level of stress can also be observed in the interface between TiN and SiO2. From simulation results, it can be predictable that delamination between GST and TiN can occur during operation of PRAM. It is expected that the simulation model, which has been developed in this research, is very useful tool for PRAM device design.

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7

Kim, Kyung Soo, Jongho Lee, and Il Hwan Cho. "Highly Scalable Vertical Channel Phase Change Random Access Memory." Japanese Journal of Applied Physics 50, no. 5R (May 1, 2011): 050206. http://dx.doi.org/10.7567/jjap.50.050206.

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8

Miao, X. S., L. P. Shi, H. K. Lee, J. M. Li, R. Zhao, P. K. Tan, K. G. Lim, H. X. Yang, and T. C. Chong. "Temperature Dependence of Phase-Change Random Access Memory Cell." Japanese Journal of Applied Physics 45, no. 5A (May 9, 2006): 3955–58. http://dx.doi.org/10.1143/jjap.45.3955.

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9

Kim, Kyung Soo, Jongho Lee, and Il Hwan Cho. "Highly Scalable Vertical Channel Phase Change Random Access Memory." Japanese Journal of Applied Physics 50, no. 5 (May 6, 2011): 050206. http://dx.doi.org/10.1143/jjap.50.050206.

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10

Lee, Jung-Min, Yuta Saito, Yuji Sutou, Junichi Koike, Jin Won Jung, Masashi Sahashi, and Yun-Heub Song. "Multiple phase change structure for the scalable phase change random access memory array." Japanese Journal of Applied Physics 53, no. 4 (March 28, 2014): 041801. http://dx.doi.org/10.7567/jjap.53.041801.

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11

Yun, Jae-Jin, and Won-Jong Lee. "Phase Change Characteristics of InxSb40-xTe60Chalcogenide Alloy for Phase Change Random Access Memory." Japanese Journal of Applied Physics 50, no. 7R (July 1, 2011): 071201. http://dx.doi.org/10.7567/jjap.50.071201.

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12

Yun, Jae-Jin, and Won-Jong Lee. "Phase Change Characteristics of InxSb40-xTe60Chalcogenide Alloy for Phase Change Random Access Memory." Japanese Journal of Applied Physics 50, no. 7 (July 20, 2011): 071201. http://dx.doi.org/10.1143/jjap.50.071201.

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13

Giraud, V., J. Cluzel, V. Sousa, A. Jacquot, A. Dauscher, B. Lenoir, H. Scherrer, and S. Romer. "Thermal characterization and analysis of phase change random access memory." Journal of Applied Physics 98, no. 1 (July 2005): 013520. http://dx.doi.org/10.1063/1.1944910.

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14

Son, Ji Hoon, HongKyw Choi, Nakwon Jang, Hong Seung Kim, Dong Young Yi, and Seong Hwan Lee. "Size Effect of Nano Scale Phase Change Random Access Memory." Journal of Nanoscience and Nanotechnology 10, no. 5 (May 1, 2010): 3165–69. http://dx.doi.org/10.1166/jnn.2010.2276.

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15

Qiao, Baowei, Jie Feng, Yunfeng Lai, Yanfei Cai, Yinyin Lin, Ting-ao Tang, Bingchu Cai, and Bomy Chen. "Si–Sb–Te films for phase-change random access memory." Semiconductor Science and Technology 21, no. 8 (June 28, 2006): 1073–76. http://dx.doi.org/10.1088/0268-1242/21/8/016.

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16

Sarwat, Syed Ghazi. "Materials science and engineering of phase change random access memory." Materials Science and Technology 33, no. 16 (July 18, 2017): 1890–906. http://dx.doi.org/10.1080/02670836.2017.1341723.

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17

Ren, W., X. Z. Jing, Y. H. Xiang, H. B. Xiao, B. C. Zhang, B. Liu, Z. T. Song, et al. "(Invited) Thin Film Challenges of Phase Change Random Access Memory." ECS Transactions 52, no. 1 (March 8, 2013): 461–65. http://dx.doi.org/10.1149/05201.0461ecst.

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18

Hongxin, Yang, Shi Luping, Lee Hock Koon, Zhao Rong, and Chong Tow Chong. "Endurance Enhancement of Elevated-Confined Phase Change Random Access Memory." Japanese Journal of Applied Physics 51, no. 2S (February 1, 2012): 02BD09. http://dx.doi.org/10.7567/jjap.51.02bd09.

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19

Chong, T. C., L. P. Shi, R. Zhao, P. K. Tan, J. M. Li, H. K. Lee, X. S. Miao, A. Y. Du, and C. H. Tung. "Phase change random access memory cell with superlattice-like structure." Applied Physics Letters 88, no. 12 (March 20, 2006): 122114. http://dx.doi.org/10.1063/1.2181191.

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20

Hongxin, Yang, Shi Luping, Lee Hock Koon, Zhao Rong, and Chong Tow Chong. "Endurance Enhancement of Elevated-Confined Phase Change Random Access Memory." Japanese Journal of Applied Physics 51, no. 2 (February 20, 2012): 02BD09. http://dx.doi.org/10.1143/jjap.51.02bd09.

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21

Gu, Yifeng, Sannian Song, Zhitang Song, Suyuan Bai, Yan Cheng, Zhonghua Zhang, Bo Liu, and Songlin Feng. "Phase-change material Ge0.61Sb2Te for application in high-speed phase change random access memory." Applied Physics Letters 102, no. 10 (March 11, 2013): 103110. http://dx.doi.org/10.1063/1.4795595.

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22

Liu, Bo, Tao Wei, Jing Hu, Wanfei Li, Yun Ling, Qianqian Liu, Miao Cheng, and Zhitang Song. "Universal memory based on phase-change materials: From phase-change random access memory to optoelectronic hybrid storage*." Chinese Physics B 30, no. 5 (May 1, 2021): 058504. http://dx.doi.org/10.1088/1674-1056/abeedf.

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23

Kozyukhin, S. A., A. A. Sherchenkov, V. M. Novotortsev, and S. P. Timoshenkov. "Phase-change-memory materials based on system chalcogenides and their application in phase-change random-access memory." Nanotechnologies in Russia 6, no. 3-4 (April 2011): 227–36. http://dx.doi.org/10.1134/s1995078011020121.

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24

Gu, Yifeng, Sannian Song, Zhitang Song, Yan Cheng, Xiaofeng Du, Bo Liu, and Songlin Feng. "SixSb2Te materials with stable phase for phase change random access memory applications." Journal of Applied Physics 111, no. 5 (March 2012): 054319. http://dx.doi.org/10.1063/1.3693557.

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25

Priya, Bhukya Krishna, and N. Ramasubramanian. "Improving the Lifetime of Phase Change Memory by Shadow Dynamic Random Access Memory." International Journal of Service Science, Management, Engineering, and Technology 12, no. 2 (March 2021): 154–68. http://dx.doi.org/10.4018/ijssmet.2021030109.

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Emerging NVM are replacing the conventional memory technologies due to their huge cell density and low energy consumption. Restricted writes is one of the major drawbacks to adopt PCM memories in real-time environments. The non-uniform writes and process variations can damage the memory cell with intensive writes, as PCM memory cells are having restricted write endurance. To prolong the lifetime of a PCM, an extra DRAM shadow memory has been added to store the writes that comes to the PCM and to level out the wearing that occurs on the PCM. An extra address directory will store the address of data written to the DRAM and a counter is used to count the number of times the blocks are written into. Based upon the counter values, the data will be written from DRAM to the PCM. The data is written to the DRAM from the PCM, based on the data requirement. Experimental results show the reduction in overall writes in a PCM, which in turn improves the lifetime of a PCM by 5% with less hardware and power overhead.

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26

Zhao, Zihan, Sicong Hua, Xiao Su, Bo Shen, Sannian Song, Zhitang Song, Weihua Wu, and Jiwei Zhai. "The optimization effect of titanium on the phase change properties of SnSb4 thin films for phase change memory applications." CrystEngComm 22, no. 30 (2020): 5002–9. http://dx.doi.org/10.1039/d0ce00697a.

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27

Wu, Liangcai, Xilin Zhou, Zhitang Song, Min Zhu, Yan Cheng, Feng Rao, Sannian Song, Bo Liu, and Songlin Feng. "Sb-rich Si–Sb–Te Phase-Change Material for Phase-Change Random Access Memory Applications." IEEE Transactions on Electron Devices 58, no. 12 (December 2011): 4423–26. http://dx.doi.org/10.1109/ted.2011.2167152.

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28

Gu, Yifeng, Yan Cheng, Sannian Song, Ting Zhang, Zhitang Song, Xuyan Liu, Xiaofeng Du, Bo Liu, and Songlin Feng. "Advantages of SixSb2Te phase-change material and its applications in phase-change random access memory." Scripta Materialia 65, no. 7 (October 2011): 622–25. http://dx.doi.org/10.1016/j.scriptamat.2011.06.045.

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29

Gu, Yifeng, Zhitang Song, Ting Zhang, Bo Liu, and Songlin Feng. "Novel phase-change material GeSbSe for application of three-level phase-change random access memory." Solid-State Electronics 54, no. 4 (April 2010): 443–46. http://dx.doi.org/10.1016/j.sse.2009.11.002.

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30

Bae, Junsoo, Kyuman Hwang, Kwangho Park, Seongbu Jeon, Dae-hwan Kang, Soonoh Park, Juhyeon Ahn, Seoksik Kim, Gitae Jeong, and Chilhee Chung. "Microstructural Characterization in Reliability Measurement of Phase Change Random Access Memory." Japanese Journal of Applied Physics 50, no. 4S (April 1, 2011): 04DD12. http://dx.doi.org/10.7567/jjap.50.04dd12.

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31

Jin, Bo, Taekyung Lim, Sanghyun Ju, Marat I. Latypov, Hyoung Seop Kim, M. Meyyappan, and Jeong-Soo Lee. "Ga-doped indium oxide nanowire phase change random access memory cells." Nanotechnology 25, no. 5 (January 9, 2014): 055205. http://dx.doi.org/10.1088/0957-4484/25/5/055205.

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32

Kim, Kyung Soo, and Il Hwan Cho. "Disturbance Characteristics of Vertical Channel Phase Change Random Access Memory Array." Japanese Journal of Applied Physics 51, no. 8R (August 1, 2012): 084302. http://dx.doi.org/10.7567/jjap.51.084302.

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33

Wen, Jing, and Lei Wang. "Interfacial Resistance Characterization for Blade-Type Phase Change Random Access Memory." IEEE Transactions on Electron Devices 67, no. 3 (March 2020): 968–75. http://dx.doi.org/10.1109/ted.2020.2965187.

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34

Lu, Yegang, Sannian Song, Zhitang Song, Liangcai Wu, Aodong He, Yuefeng Gong, Feng Rao, and Bo Liu. "Superlattice-like electrode for low-power phase-change random access memory." Applied Physics Letters 101, no. 11 (September 10, 2012): 113104. http://dx.doi.org/10.1063/1.4751258.

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35

Bae, Junsoo, Kyuman Hwang, Kwangho Park, Seongbu Jeon, Dae-hwan Kang, Soonoh Park, Juhyeon Ahn, Seoksik Kim, Gitae Jeong, and Chilhee Chung. "Microstructural Characterization in Reliability Measurement of Phase Change Random Access Memory." Japanese Journal of Applied Physics 50, no. 4 (April 20, 2011): 04DD12. http://dx.doi.org/10.1143/jjap.50.04dd12.

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36

Kim, Kyung Soo, and Il Hwan Cho. "Disturbance Characteristics of Vertical Channel Phase Change Random Access Memory Array." Japanese Journal of Applied Physics 51 (July 31, 2012): 084302. http://dx.doi.org/10.1143/jjap.51.084302.

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37

Raoux, Simone, Robert M. Shelby, Jean Jordan-Sweet, Becky Munoz, Martin Salinga, Yi-Chou Chen, Yen-Hao Shih, Erh-Kun Lai, and Ming-Hsiu Lee. "Phase change materials and their application to random access memory technology." Microelectronic Engineering 85, no. 12 (December 2008): 2330–33. http://dx.doi.org/10.1016/j.mee.2008.08.004.

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38

Yang, Hongxin, textscShi Luping, textscLee Hock Koon, textscZhao Rong, textscLi Jianming, textscLim Kian Guan, and textscChong Tow Chong. "Plastic Deformation and Failure Analysis of Phase Change Random Access Memory." Japanese Journal of Applied Physics 48, no. 4 (April 20, 2009): 04C064. http://dx.doi.org/10.1143/jjap.48.04c064.

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39

Kwon, Yongwoo, Byoungnam Park, and Dae-Hwan Kang. "Scaling of Data Retention Statistics in Phase-Change Random Access Memory." IEEE Electron Device Letters 36, no. 5 (May 2015): 454–56. http://dx.doi.org/10.1109/led.2015.2414952.

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40

Fetahovic, Irfan, Edin Dolicanin, Djordje Lazarevic, and Boris Loncar. "Overview of radiation effects on emerging non-volatile memory technologies." Nuclear Technology and Radiation Protection 32, no. 4 (2017): 381–92. http://dx.doi.org/10.2298/ntrp1704381f.

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In this paper we give an overview of radiation effects in emergent, non-volatile memory technologies. Investigations into radiation hardness of resistive random access memory, ferroelectric random access memory, magneto-resistive random access memory, and phase change memory are presented in cases where these memory devices were subjected to different types of radiation. The obtained results proved high radiation tolerance of studied devices making them good candidates for application in radiation-intensive environments.

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41

An, Jun-seop, Chul-min Choi, Satoshi Shindo, Yuji Sutou, Yong-woo Kwon, and Yun-heub Song. "Impact of contact resistance on memory window in phase-change random access memory (PCRAM)." Journal of Computational Electronics 15, no. 4 (October 21, 2016): 1570–76. http://dx.doi.org/10.1007/s10825-016-0905-3.

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42

Sun Jing-Yang, Wang Dong-Ming, L Ye-Gang, Wang Miao, Wang Yi-Man, Shen Xiang, Wang Guo-Xiang, and Dai Shi-Xun. "Structure and phase change in Cu-Ge3Sb2Te5 films for use in phase change random access memory." Acta Physica Sinica 64, no. 1 (2015): 016103. http://dx.doi.org/10.7498/aps.64.016103.

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43

Zhang, Yi, Jie Feng, Hao Wang, Bingchu Cai, and Bomy Chen. "Modeling of Two Different Operation Modes of Phase Change Material for Phase-Change Random-Access Memory." Japanese Journal of Applied Physics 44, no. 4A (April 8, 2005): 1687–92. http://dx.doi.org/10.1143/jjap.44.1687.

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44

Gyanathan, Ashvini, and Yee-Chia Yeo. "Phase-Change Random Access Memory With Multilevel Resistances Implemented Using a Dual Phase-Change Material Stack." IEEE Transactions on Electron Devices 59, no. 11 (November 2012): 2910–16. http://dx.doi.org/10.1109/ted.2012.2211881.

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45

Cheng, Yan, Yonghui Zheng, and Zhitang Song. "Reversible switching in bicontinuous structure for phase change random access memory application." Nanoscale 13, no. 8 (2021): 4678–84. http://dx.doi.org/10.1039/d0nr09139a.

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A 3D nano-bicontinuous structure consisting of a reversible Sb₂Te₃ phase and amorphous Si phase is visualized. The amorphous Si frame is stable and the Sb₂Te₃ nano areas switch between the a- and f-structure.

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46

Do, Woo-Hyuk, Sung-Soon Kim, Jun-Hyun Bae, Jun-Ho Cha, Kyung-Ho Kim, Young-Kook Lee, and Hong-Lim Lee. "Evaluation of Phase Transition Behavior of Ge2Sb2Te5Thin Film for Phase Change Random Access Memory." Journal of the Korean Ceramic Society 44, no. 1 (January 31, 2007): 18–22. http://dx.doi.org/10.4191/kcers.2007.44.1.018.

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47

Ryu, Seung-Wook, Young-Bae Ahn, Jong-Ho Lee, and Hyeong-Joon Kim. "Thermal Stability of SiO2Doped Ge2Sb2Te5for Application in Phase Change Random Access Memory." JSTS:Journal of Semiconductor Technology and Science 11, no. 3 (September 30, 2011): 146–52. http://dx.doi.org/10.5573/jsts.2011.11.3.146.

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48

Park, Chun Woong, Chongdae Park, Woo Young Choi, Dongsun Seo, Cherlhyun Jeong, and Il Hwan Cho. "Scaling Down Characteristics of Vertical Channel Phase Change Random Access Memory (VPCRAM)." JSTS:Journal of Semiconductor Technology and Science 14, no. 1 (February 28, 2014): 48–52. http://dx.doi.org/10.5573/jsts.2014.14.1.048.

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49

Lian, Xiaojuan, and Lei Wang. "Boolean Logic Function Realized by Phase-Change Blade Type Random Access Memory." IEEE Transactions on Electron Devices 69, no. 4 (April 2022): 1849–57. http://dx.doi.org/10.1109/ted.2022.3152981.

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50

Oh, H., B. Cho, W. Y. Cho, S. Kang, B. Choi, H. Kim, K. Kim, et al. "Enhanced Write Performance of a 64-Mb Phase-Change Random Access Memory." IEEE Journal of Solid-State Circuits 41, no. 1 (January 2006): 122–26. http://dx.doi.org/10.1109/jssc.2005.859016.

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