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Journal articles on the topic 'Phonon energy'

Author: Grafiati

Published: 7 July 2024

Last updated: 25 July 2025

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1

Dovlatova, Alla, and Dmitri Yerchuck. "Quantum Field Theory of Dynamics of Spectroscopic Transitions by Strong Dipole-Photon and Dipole-Phonon Coupling." ISRN Optics 2012 (December 12, 2012): 1–10. http://dx.doi.org/10.5402/2012/390749.

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Matrix-operator difference-differential equations for dynamics of spectroscopic transitions in 1D multiqubit exchange-coupled (para)magnetic and optical systems by strong dipole-photon and dipole-phonon coupling are derived within the framework of quantum field theory. It has been established that by strong dipole-photon and dipole-phonon coupling the formation of long-lived coherent system of the resonance phonons takes place, and relaxation processes acquire pure quantum character. It is determined by the appearance of coherent emission process of EM-field energy, for which the resonance pho

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2

Kostur, V. N., V. P. Seminozhenko, and S. E. Shafranyuk. "Phonon generation in Dayem–Martin effect." Soviet Journal of Low Temperature Physics 14, no. 2 (1988): 64–67. https://doi.org/10.1063/10.0031868.

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Nonequilibrium effects arising in SIS’ film contacts in superconductors in a microwave field under multiphoton conditions are considered. It is shown that the field energy is mainly absorbed by electron tunneling involving photon through two channels, viz. scattering and recombination, and a part of the absorbed energy is transformed into the energy of the emitted nonequilibrium phonons. Various types of phonon generation by symmetric and asymmetric contacts are discussed. The spectra of the emitted phonons are found to contain resonance peaks in addition to other features. This suggests the p

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3

Zhao, Feng Qi, and Xiao Mei Dai. "Influence of Pressure on Polaron Energy in a Wurtzite GaN/Al_xGa_1-xN Quantum Well." Solid State Phenomena 288 (March 2019): 17–26. http://dx.doi.org/10.4028/www.scientific.net/ssp.288.17.

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The influence of hydrostatic pressure on the polaron energy level in wurtzite GaN/AlxGa1-xN quantum well is studied by a Lee-Low-Pines variational method, and the numerical results of the ground state energy, transition energy and contributions of different phonons to polaron energy (polaron effects) are given as functions of pressurepand compositionx. The results show that the ground state energy and transition energy in the wurtzite GaN/AlxGa1-xN quantum well decrease with the increase of the hydrostatic pressurep, and increase with the increase of the compositionx. The contributions of diff

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4

Kang, Nam Lyong, and Sang Don Choi. "Projection-Reduction Approach to Optical Conductivities for an Electron-Phonon System and Their Diagram Representation." ISRN Condensed Matter Physics 2014 (April 7, 2014): 1–23. http://dx.doi.org/10.1155/2014/719120.

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Utilizing state-dependent projection operators and the Kang-Choi reduction identities, we derive the linear, first, and second-order nonlinear optical conductivities for an electron system interacting with phonons. The lineshape functions included in the conductivity tensors satisfy “the population criterion” saying that the Fermi distribution functions for electrons and Planck distribution functions for phonons should be combined in multiplicative forms. The results also contain energy denominator factors enforcing the energy conservation as well as interaction factors describing electron-pho

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5

Nasiri, Milad, and Yan Wang. "Evolution of Phonon Spectral Energy Density in Superlattice Structures." Crystals 15, no. 5 (2025): 446. https://doi.org/10.3390/cryst15050446.

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Superlattices are a distinctive class of artificial nanostructures formed by the periodic stacking of two or more materials. The high density of interfaces in these structures often gives rise to exotic physical properties. In the context of thermal transport, it is well established that such interfaces can significantly scatter particle-like phonons while also inducing constructive or destructive interference in wave-like phonons, depending on the relationship between the phonons’ coherence lengths and the superlattice’s period thickness. In this work, we systematically investigate the effect

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6

Beugnot, Jean Charles, and Vincent Laude. "Generation of phonons from electrostriction in small-core optical waveguides." AIP advances 3 (April 9, 2013): 042109. https://doi.org/10.1063/1.4801936.

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We investigate the generation of acoustic phonons from electrostriction of optical waves in small core waveguides. We speciﬁcally consider simple step-index strip waveguides composed of silica or silicon in air, with sub-micron lateral dimen-sions. Such waveguides support one or a few optical modes, but a rich spectrum of acoustic phonons that becomes densely populated as the phonon frequency in-creases. We evaluate rigorously the phonon energy density that results from the electrostriction of two frequency detuned guided optical waves, that are either co- or contra-propagating, including phon

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7

Jin, Jae Sik, and Joon Sik Lee. "Electron–Phonon Interaction Model and Prediction of Thermal Energy Transport in SOI Transistor." Journal of Nanoscience and Nanotechnology 7, no. 11 (2007): 4094–100. http://dx.doi.org/10.1166/jnn.2007.010.

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An electron–phonon interaction model is proposed and applied to thermal transport in semiconductors at micro/nanoscales. The high electron energy induced by the electric field in a transistor is transferred to the phonon system through electron–phonon interaction in the high field region of the transistor. Due to this fact, a hot spot occurs, which is much smaller than the phonon mean free path in the Si-layer. The full phonon dispersion model based on the Boltzmann transport equation (BTE) with the relaxation time approximation is applied for the interactions among different phonon branches a

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8

Jin, Jae Sik, and Joon Sik Lee. "Electron–Phonon Interaction Model and Prediction of Thermal Energy Transport in SOI Transistor." Journal of Nanoscience and Nanotechnology 7, no. 11 (2007): 4094–100. http://dx.doi.org/10.1166/jnn.2007.18084.

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An electron–phonon interaction model is proposed and applied to thermal transport in semiconductors at micro/nanoscales. The high electron energy induced by the electric field in a transistor is transferred to the phonon system through electron–phonon interaction in the high field region of the transistor. Due to this fact, a hot spot occurs, which is much smaller than the phonon mean free path in the Si-layer. The full phonon dispersion model based on the Boltzmann transport equation (BTE) with the relaxation time approximation is applied for the interactions among different phonon branches a

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9

Rodrigues, Ligia M. C. S., and Stenio Wulck. "q-Deformation and Energy Deficit in Liquid Helium Phonon Spectrum." Modern Physics Letters B 11, no. 07 (1997): 297–301. http://dx.doi.org/10.1142/s0217984997000372.

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We present an application of an ideal bosonic q-gas in a ν0 inequivalent representation to the phonons in 4 He and discuss the role of q-deformation as a possible mechanism to supply the energy deficit that forbiddens one-phonon decay into two phonons when the constant γ in the phonon anomalous dispersion relation (ωph = c0p(1 - γp2)) is positive.

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10

Bin Mansoor, Saad, and Bekir Sami Yilbas. "Nonequilibrium cross-plane energy transport in aluminum–silicon–aluminum wafer." International Journal of Modern Physics B 29, no. 17 (2015): 1550112. http://dx.doi.org/10.1142/s021797921550112x.

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Transient phonon transport across cross-planes of aluminum–silicon–aluminum combined films is investigated and the Boltzmann transport equation is incorporated to formulate the energy transport in the combined films. Since electrons and phonons thermally separate in the thin aluminum film during heating, the Boltzmann equation is used separately in the electron and lattice subsystems to account for the energy transport in the aluminum film. Electron–phonon coupling is incorporated for the energy exchange between electron and lattice subsystems in the film. Thermal boundary resistance (TBR) is

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11

Sen, R., N. Vast, and J. Sjakste. "Hot electron relaxation and energy loss rate in silicon: Temperature dependence and main scattering channels." Applied Physics Letters 120, no. 8 (2022): 082101. http://dx.doi.org/10.1063/5.0082727.

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In this work, we revisit the density functional theory (DFT)-based results for electron–phonon scattering in highly excited silicon. Using the state-of-the-art ab initio methods, we examine the main scattering channels, which contribute to the total electron–phonon scattering rate and the energy loss rate of photoexcited electrons in silicon as well as their temperature dependence. Both temperature dependence and the main scattering channels are shown to strongly differ for the total electron–phonon scattering rate and the energy loss rate of photoexcited electrons. While the total electron–ph

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12

MATULIONIS, A., J. LIBERIS, L. ARDARAVIČIUS, et al. "HOT-PHONON LIMITED ELECTRON ENERGY RELAXATION IN AlN/GaN." International Journal of High Speed Electronics and Systems 12, no. 02 (2002): 459–68. http://dx.doi.org/10.1142/s0129156402001381.

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Microwave noise technique is applied to study energy dissipation in an AlN/GaN heterostructure containing a two-dimensional electron gas channel. Measurements of the dissipated power and the noise temperature are performed at 80 K lattice temperature in the electric field range up to 40 kV/cm. The energy relaxation time is found to decrease from 40 ps to 0.55 ps when the bias is increased. The experimental data are discussed in the electron temperature approximation assuming electron energy dissipation on optical phonons and hot-phonon effects. Dependencies of the hot-phonon number and the hot

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13

Zhou, Jiawei, Bolin Liao, Bo Qiu, et al. "Ab initio optimization of phonon drag effect for lower-temperature thermoelectric energy conversion." Proceedings of the National Academy of Sciences 112, no. 48 (2015): 14777–82. http://dx.doi.org/10.1073/pnas.1512328112.

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Although the thermoelectric figure of merit zT above 300 K has seen significant improvement recently, the progress at lower temperatures has been slow, mainly limited by the relatively low Seebeck coefficient and high thermal conductivity. Here we report, for the first time to our knowledge, success in first-principles computation of the phonon drag effect—a coupling phenomenon between electrons and nonequilibrium phonons—in heavily doped region and its optimization to enhance the Seebeck coefficient while reducing the phonon thermal conductivity by nanostructuring. Our simulation quantitative

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14

Liu, Xinyu, Quanjie Wang, Renzong Wang, Sheng Wang, and Xiangjun Liu. "Impact of interfacial compositional diffusion on interfacial phonon scattering and transmission in GaN/AlN heterostructure." Journal of Applied Physics 133, no. 9 (2023): 095101. http://dx.doi.org/10.1063/5.0134903.

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Compositional diffusion at interfaces often occurs during the synthesis of heterostructures, which poses a significant challenge to the reliability and performance of heterostructure-based electronic devices. In this study, the effect of interfacial compositional diffusion on the interfacial phonon transport in GaN/AlN heterostructures has been explored using molecular dynamics and phonon dynamics simulations. It is found the compositional diffusion results in a remarkable reduction in the interfacial thermal conductance (ITC) of the heterostructures, which can be modulated by tuning the compo

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15

Sun, J. P., H. B. Teng, G. I. Haddad, M. A. Stroscio, and G. J. Iafrate. "lntersubband Relaxation in Step Quantum Well Structures." VLSI Design 8, no. 1-4 (1998): 289–93. http://dx.doi.org/10.1155/1998/17823.

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Intersubband relaxation due to electron interactions with the localized phonon modes plays an important role for population inversion in quantum well laser structures designed for intersubband lasers operating at mid-infrared to submillimeter wavelengths. In this work, intersubband relaxation rates between subbands in step quantum well structures are evaluated numerically using Fermi's golden rule, in which the localized phonon modes including the asymmetric interface modes, symmetric interface modes, and confined phonon modes and the electron – phonon interaction Hamiltonians are derived base

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16

DOLOCAN, ANDREI, VOICU OCTAVIAN DOLOCAN, and VOICU DOLOCAN. "SOME ASPECTS OF THE ELECTRON-BOSON INTERACTION AND OF THE ELECTRON-ELECTRON INTERACTION VIA BOSONS." Modern Physics Letters B 21, no. 01 (2007): 25–36. http://dx.doi.org/10.1142/s0217984907012335.

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By using a Hamiltonian of interaction between fermions via bosons1 we derive some properties of the electro-phonon and electron-photon interaction and also of the electron-electron interaction. We have obtained that in a degenerate electron gas there is an attraction between two electrons via acoustical phonons. Also, in certain conditions, there may be an attraction between two electrons via longitudinal optical phonons. Although our expressions for the polaron energy in both cases of the acoustical and longitudinal optical phonons are different from that obtained in the standard theory, thei

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17

Orlov, A. V., and V. I. Zelenskiy. "PHONON SPECTRAL ENERGY DENSITY IN METALSWITH THE CUBIC LATTICE STRUCTURE." Russian Family Doctor, no. 1 (December 15, 2020): 73–78. http://dx.doi.org/10.17816/rfd10681.

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This study derives an expression of spectral energy density of acoustic phonons, as well as introducing the basic properties of anharmonic phonons and deriving an expression of their spectral energy density. The description of the vibrations of the atoms of the crystal lattice to this day cannot be considered completely finished, despite the existence of the theory of heat capacity at a constant volume (Debye theory). Debye's theory perfectly explains the law of cubic increase in heat capacity with temperature at low values of the latter. However, at high temperatures, the Debye model seems in

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18

Orlov, A. V., and V. I. Zelenskiy. "PHONON SPECTRAL ENERGY DENSITY IN METALSWITH THE CUBIC LATTICE STRUCTURE." Russian Family Doctor, no. 1 (December 15, 2020): 73–78. http://dx.doi.org/10.17816/rfd10713.

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This study derives an expression of spectral energy density of acoustic phonons, as well as introducing the basic properties of anharmonic phonons and deriving an expression of their spectral energy density. The description of the vibrations of the atoms of the crystal lattice to this day cannot be considered completely finished, despite the existence of the theory of heat capacity at a constant volume (Debye theory). Debye's theory perfectly explains the law of cubic increase in heat capacity with temperature at low values of the latter. However, at high temperatures, the Debye model seems in

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19

Orlov, A. V., and V. I. Zelenskiy. "PHONON SPECTRAL ENERGY DENSITY IN METALSWITH THE CUBIC LATTICE STRUCTURE." Yugra State University Bulletin 16, no. 1 (2020): 73–78. http://dx.doi.org/10.17816/byusu20200173-78.

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This study derives an expression of spectral energy density of acoustic phonons, as well as introducing the basic properties of anharmonic phonons and deriving an expression of their spectral energy density. The description of the vibrations of the atoms of the crystal lattice to this day cannot be considered completely finished, despite the existence of the theory of heat capacity at a constant volume (Debye theory). Debye's theory perfectly explains the law of cubic increase in heat capacity with temperature at low values of the latter. However, at high temperatures, the Debye model seems in

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20

Hasegawa, Takayuki. "Characteristics of Coherent Optical Phonons in a Hexagonal YMnO3 Thin Film." Applied Sciences 9, no. 4 (2019): 704. http://dx.doi.org/10.3390/app9040704.

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This paper reviews our recent study on a coherent optical phonon in a hexagonal YMnO3 thin film together with related optical studies in hexagonal RMnO3 (R = Y, Lu, Ho) compounds. Coherent phonons have been observed in RMnO3 compounds by pump-probe spectroscopy with subpicosecond laser pulses, whereas the observation of coherent optical phonons was reported only in LuMnO3. Recently, we succeeded in the observation of the coherent optical phonon in a YMnO3 thin film. The generation process of the coherent optical phonon is assigned to a displacive mechanism, which is identical to that in LuMnO3

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21

Frazer, Laszlo, Richard D. Schaller, Kelvin B. Chang, Aleksandr Chernatynskiy, and Kenneth R. Poeppelmeier. "Seeing the invisible plasma with transient phonons in cuprous oxide." Physical Chemistry Chemical Physics 19, no. 2 (2017): 1151–57. http://dx.doi.org/10.1039/c6cp06532e.

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22

Matveenko, S. I., and S. Brazovskii. "Theory of pseudogaps in charge density waves in application to photo electron spectroscopy." Journal de Physique IV 12, no. 9 (2002): 73. http://dx.doi.org/10.1051/jp4:20020358.

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For a one-dimensional electron-phonon system we consider the photon absorption involving electronic excitations within the pseudogap energy range. Within the adiabatic approximation for the electron - phonon interactions these processes are described by ronlinear configurations of an instanton type. We calculate the subgap absorption as it can be observed by means of photo electron or tunneling spectroscopies. In details we consider systems with gapless modes: 1D semiconductors with acoustic phonons and incommensurate charge density waves. We found that below the free particle edge the pseudog

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23

Nemova, Galina. "Laser Cooling and Trapping of Rare-Earth-Doped Particles." Applied Sciences 12, no. 8 (2022): 3777. http://dx.doi.org/10.3390/app12083777.

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This review focuses on optical refrigeration with the anti-Stokes fluorescence of rare-earth (RE)-doped low-phonon micro- and nanocrystals. Contrary to bulk samples, where the thermal energy is contained in internal vibrational modes (phonons), the thermal energy of nanoparticles is contained in both the translational motion and internal vibrational (phonons) modes of the sample. Much theoretical and experimental research is currently devoted to the laser cooling of nanoparticles. In the majority of the related work, only the translational energy of the particles has been suppressed. In this r

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24

Tsybeskov, Leonid. "Nanocrystalline Silicon for Optoelectronic Applications." MRS Bulletin 23, no. 4 (1998): 33–38. http://dx.doi.org/10.1557/s0883769400030244.

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Light emission in silicon has been intensively investigated since the 1950s when crystalline silicon (c-Si) was recognized as the dominant material in microelectronics. Silicon is an indirect-bandgap semiconductor and momentum conservation requires phonon assistance in radiative electron-hole recombination (Figure 1a, top left). Because phonons carry a momentum and an energy, the typical signature of phonon-assisted recombination is several peaks in the photoluminescence (PL) spectra at low temperature. These PL peaks are called “phonon replicas.” High-purity c-Si PL is caused by free-exciton

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25

XING, D. Y., J. YANG, and C. S. TING. "EFFECT OF THE NONEQUILIBRIUM DISTRIBUTION FUNCTION ON THE ENERGY LOSS RATE OF HOT ELECTRONS IN A SEMICONDUCTOR." International Journal of Modern Physics B 09, no. 08 (1995): 991–1000. http://dx.doi.org/10.1142/s0217979295000392.

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The closed time path Green’s function method is used to derive the nonequilibrium distribution functions of acoustic phonons and excitations of hot electrons, renormalized by the electron-phonon interaction in the random phase approximation, and to calculate the power dissipation of hot electrons. It is shown that the energy loss channel of hot electrons would vanish unless a relaxation rate corresponding to the decay of one acoustic phonon into two or more bare acoustic phonons via the anharmonic interaction is explicitly included in the phonon propagator. The effect due to the anharmonic int

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26

Capone, M., C. Castellani, and M. Grilli. "Electron-Phonon Interaction in Strongly Correlated Systems." Advances in Condensed Matter Physics 2010 (2010): 1–18. http://dx.doi.org/10.1155/2010/920860.

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The Hubbard-Holstein model is a simple model including both electron-phonon interaction and electron-electron correlations. We review a body of theoretical work investigating, the effects of strong correlations on the electron-phonon interaction. We focus on the regime, relevant to high-Tcsuperconductors, in which the electron correlations are dominant. We find that electron-phonon interaction can still have important signatures, even if many anomalies appear, and the overall effect is far from conventional. In particular in the paramagnetic phase the effects of phonons are much reduced in the

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27

Ohtsu, Motoichi. "Dressed photon technology." Nanophotonics 1, no. 1 (2012): 83–97. http://dx.doi.org/10.1515/nanoph-2011-0001.

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AbstractThis paper reviews the theoretical picture of dressed photons used to describe the electromagnetic interactions between nanometric particles located in close proximity to each other. The coupling between a dressed photon and multi-mode coherent phonons is also presented, revealing the presence of a novel phonon-assisted process in light-matter interactions. Applications of this novel process to innovative optical devices, fabrication technologies, energy conversion, and hierarchical systems are demonstrated.

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28

Dejneka, Matthew J. "Transparent Oxyfluoride Glass Ceramics." MRS Bulletin 23, no. 11 (1998): 57–62. http://dx.doi.org/10.1557/s0883769400031018.

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Low-phonon energy glasses are desirable hosts for rare-earth (RE) ions because they enable emission from RE energy levels that would otherwise be quenched in high-phonon energy glasses. Such emissions are of interest for fiber amplifiers operating at telecommunications wavelength band s of 1.31, 1.46, and 1.55 μm, and for up-conversion lasers and three-dimensional displays.Phonons are optical-frequency molecular vibrations in a material. If the RE energy level of interest lies only a few phonons in energy above the next lower lying level such as the 1G4 level of Pr3+, which is only 3,000 cm −1

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29

Villani, Matteo, and Xavier Oriols. "Can Wigner distribution functions with collisions satisfy complete positivity and energy conservation?" Journal of Computational Electronics 20, no. 6 (2021): 2232–44. http://dx.doi.org/10.1007/s10825-021-01798-1.

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AbstractTo avoid the computational burden of many-body quantum simulation, the interaction of an electron with a photon (phonon) is typically accounted for by disregarding the explicit simulation of the photon (phonon) degree of freedom and just modeling its effect on the electron dynamics. For quantum models developed from the (reduced) density matrix or its Wigner–Weyl transformation, the modeling of collisions may violate complete positivity (precluding the typical probabilistic interpretation). In this paper, we show that such quantum transport models can also strongly violate the energy c

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30

TAKESHIMA, MASUMI, K. MIZUNO, and ATSUO H. MATSUI. "PHONON SCATTERING OF FRENKEL EXCITONS IN MOLECULAR MICROCRYSTALLITES EMBEDDED IN A MATRIX." International Journal of Modern Physics B 15, no. 28n30 (2001): 3973–76. http://dx.doi.org/10.1142/s021797920100913x.

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A matrix effect on the exciton-phonon coupling in microcrystallites embedded in a matrix is investigated theoretically. It is shown that a parameter σ defined as the square of the ratio of the phonon bandwidth of a matrix material to that of a microcrystallite material is a crucial one, affecting the exciton-phonon scattering. Phonons flow in the microcrystallite or out of it for either of σ > 1 or σ < 1, respectively; the probability for finding phonons in the microcrystallite increases with increasing σ. Thus the strength of the exciton-phonon coupling in the microcrystallite is influe

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31

Кулеев, И. Г., та И. И. Кулеев. "Влияние фокусировки на взаимное увлечение электронов и фононов и электросопротивление кристаллов калия". Физика твердого тела 64, № 8 (2022): 899. http://dx.doi.org/10.21883/ftt.2022.08.52680.324.

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The effect influence of elastic energy anisotropy on the mutual drag of electrons and phonons and the electrical resistance of potassium crystals at low temperatures have investigated. We have analyzed the momentum exchange between the electron and three phonon flows corresponding to three branches of the vibrational spectrum in the hydrodynamic approximation. The actual mechanisms of phonon momentum relaxation have taken into account: scattering at sample boundaries, dislocations, and in the processes of phonon-phonon transfer. It have shown that in the limiting case of strong mutual drag of

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Ribeiro, Sofia, Angela Vasanelli, Yanko Todorov, and Carlo Sirtori. "Quantum Theory of Multisubband Plasmon– Phonon Coupling." Photonics 7, no. 1 (2020): 19. http://dx.doi.org/10.3390/photonics7010019.

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We present a theoretical description of the coupling between longitudinal optical phonons and collective excitations of a two-dimensional electron gas. By diagonalizing the Hamiltonian of the system, including Coulomb electron–electron and Fröhlich interactions, we observe the formation of multisubband polarons, mixed states partially phonon and partially multisubband plasmon, characterized by a coupling energy which is a significant fraction, up to ∼ 40 % , of the phonon energy. We demonstrate that multisubband plasmons and longitudinal optical phonons are in the ultra-strong coupling regime

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SINGH, NAVINDER. "HOT ELECTRON RELAXATION IN A METAL NANOPARTICLE: ELECTRON SURFACE-PHONON INTERACTION." Modern Physics Letters B 18, no. 24 (2004): 1261–65. http://dx.doi.org/10.1142/s0217984904007797.

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The relaxation of hot electrons is considered in a metal nanoparticle. When the particle size is of the order of electron mean free path, the main channel of hot electron energy loss is through surface-phonon generation, rather than bulk phonon generation. A calculation for the hot electron relaxation by the generation of surface-phonons is given, assuming that electrons and surface-phonons are described by their equilibrium Fermi and Bose distribution functions. The assumption is valid because the time required to establish equilibrium in the electron gas is much less than the time for achiev

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34

Kuleyev I. G. and Kuleyev I. I. "The Effect of phonon focusing on the mutual drag of electrons and phonons and the electrical resistance of potassium." Physics of the Solid State 64, no. 8 (2022): 901. http://dx.doi.org/10.21883/pss.2022.08.54601.324.

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The effect influence of elastic energy anisotropy on the mutual drag of electrons and phonons and the electrical resistance of potassium crystals at low temperatures have investigated. We have analyzed the momentum exchange between the electron and three phonon flows corresponding to three branches of the vibrational spectrum in the hydrodynamic approximation. The actual mechanisms of phonon momentum relaxation have taken into account: scattering at sample boundaries, dislocations, and in the processes of phonon-phonon transfer. It have shown that in the limiting case of strong mutual drag of

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35

Zhao, Guojun, X. X. Liang, and S. L. Ban. "Binding Energies of Excitons in GaAs/AlAs Quantum Wells Under Pressure." Modern Physics Letters B 17, no. 16 (2003): 863–70. http://dx.doi.org/10.1142/s0217984903005329.

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The binding energy of an exciton in the GaAs/AlAs quantum well is discussed including the influence of interface optical phonons and bulk longitudinal optical phonons confined in the well under hydrostatic pressure. The dependence of the phonon energies on pressure is considered using a linear interpolation method to obtain the pressure effect on the exciton binding energy by a variational calculation. The result shows that the polaronic effect on the exciton binding energies cannot be neglected and the pressure effect on the exciton-phonon interaction is obvious.

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36

Saxena, Kapil, Vivek Kumar, and A. K. Shukla. "Investigation of spatial disorder in graphite by Raman lineshape analysis." Canadian Journal of Physics 90, no. 10 (2012): 975–79. http://dx.doi.org/10.1139/p2012-093.

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Disorder in graphite is studied as a function of phonon softening of Raman active modes. A comprehensive analysis of disorder is discussed here using the G and D modes of the graphite. Two-dimensional disorder is manifested in the correlation length of the sp2 hybridization in the graphitic plane. It is characterized here by lineshape analysis of Raman activated G and D modes. Phonon softening of the G mode is almost insensitive to disorder. It is more asymmetric on the lower energy side with increasing disorder. Phonon softening and line broadening of the D mode have high sensitivity to disor

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37

VARSHNEY, DINESH, RAJENDRA JAIN, and NAMITA SINGH. "PHONON DRAG AND CARRIER DIFFUSION CONTRIBUTIONS IN THERMOELECTRIC POWER OF K3C60 FULLERIDES." International Journal of Computational Materials Science and Engineering 01, no. 03 (2012): 1250027. http://dx.doi.org/10.1142/s2047684112500273.

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The thermoelectric power (S) of K3C60 fullerides is theoretically analyzed. Mott expression within parabolic band approximation is used to reveal the electron diffusive thermoelectric power (Sc diff ) following Fermi energy as electron parameter, Sc diff show linear temperature dependence. S infers a change in slope above transition temperature and become almost linear above 70 K. The phonon drag thermoelectric power (S ph drag ) is computed within relaxation time approximation when thermoelectric power is limited by scattering of phonons from defects, grain boundaries, phonons and electrons a

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Li, Zheng, Hailong Wang, Li Chen, Sha Chen, and Qian Gong. "The electron-longitudinal optical phonon scattering rate in GaInAsP/InP stepped quantum well." International Journal of Modern Physics B 30, no. 26 (2016): 1650196. http://dx.doi.org/10.1142/s0217979216501964.

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Within the framework of effective mass approximation, the scattering rate via longitudinal optical (LO) phonon emission for an electron and the mean scattering rate via LO phonons emission for electrons initially in the first excited sub-band and finally in the ground sub-band in [Formula: see text] stepped quantum well (QW) is calculated adopting the shooting method and Fermi’s golden rule. The results show that the scattering rate and the mean scattering rate are highly dependent on alloy compositions, well width, initial electron energy, electron temperature and sub-band separation [Formula

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Liu, Xiancheng, Peng Chen, Zili Xie, et al. "Dependence of GaN Exciton Energy on Temperature." Crystals 15, no. 2 (2025): 137. https://doi.org/10.3390/cryst15020137.

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In this paper, we investigate the relationship between GaN exciton energy and temperature by using high-quality, strain-free GaN epilayers. Traditional models, such as Varshni’s model and the Bose–Einstein model, are primarily based on empirical fitting and give little or no consideration to electron–phonon interactions, which prevents them from accurately calculating GaN exciton energy over a wide temperature range. Considering the interaction of electrons and phonons, we use singular functions, linear functions and power functions to express the phonon density of GaN, and then 2BE, singular-

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Mao, Yudong, Shouyu Liu, Jiying Liu, et al. "Phonon Transport Characteristics of Nano-Silicon Thin Films Irradiated by Ultrafast Laser under Dispersion Relation." Buildings 14, no. 1 (2024): 210. http://dx.doi.org/10.3390/buildings14010210.

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The gray model simplifies calculations by ignoring phonon polarization, but sacrifices a certain level of computational accuracy. In effect, the frequency and wavevector of phonons form complex polarization patterns, which means their propagation modes and vibrational directions have different influences. Therefore, based on the phonon dispersion relations in silicon, the lattice Boltzmann method is used to analyze the phonon transport characteristics in nano-silicon films under ultrafast laser excitation. The results show that the total energy density distribution obtained by superimposing ac

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Lagos, Maureen J., Isobel C. Bicket, S. Shayan Mousavi M., and Gianluigi A. Botton. "Advances in ultrahigh-energy resolution EELS: phonons, infrared plasmons and strongly coupled modes." Microscopy 71, Supplement_1 (2022): i174—i199. http://dx.doi.org/10.1093/jmicro/dfab050.

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Abstract Nowadays, sub-50 meV atom-wide electron probes are routinely produced for electron energy loss spectroscopy in transmission electron microscopes due to monochromator technology advances. We review how gradual improvements in energy resolution enabled the study of very low-energy excitations such as lattice phonons, molecular vibrations, infrared plasmons and strongly coupled hybrid modes in nanomaterials. Starting with the theoretical framework needed to treat inelastic electron scattering from phonons in solids, we illustrate contributions in detecting optical surface phonons in phot

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42

Vinh, Pham Tuan, Le Dinh, and Luong Van Tung. "OPTICALLY DETECTED ELECTROPHONON RESONANCE AND LINEWIDTHS IN TRIANGULAR QUANTUM WELLS." Hue University Journal of Science: Natural Science 127, no. 1A (2018): 119. http://dx.doi.org/10.26459/hueuni-jns.v127i1a.4668.

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<p>In the present paper, we study the linear optical absorption power in triangular quantum wells (QW), subjected to a laser field when electrons are scattered with longitudinal optical phonons (LO phonons). The analytic expressions are obtained for optical absorption power via electron-LO phonon scattering . The linear optically detected electrophonon resonance (ODEPR) effect in a specific GaAs/AlAs quantum well with triangular potential is investigated. Conditions for the ODEPR are determined based on the energy conservation law. From the curves expressing the dependence of the absorpt

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Sato, M., Y. Takahara, M. Matsumoto, N. Kajinami, M. Hanaoka, and M. Iwakawa. "Thermal control of thin films with nano structure." Journal of Physics: Conference Series 2766, no. 1 (2024): 012206. http://dx.doi.org/10.1088/1742-6596/2766/1/012206.

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Abstract Thermoelectric energy conversions have been attracting much attention, which directly generate electric energy from thermal one by utilizing the Seebeck effect. Among various efforts to improve the conversion efficiency, control of phonon propagation with nano-scale structures has been popular, which utilize phonon scatterings on structural interfaces. The concept is based on the difference of mean free path (MFP) between phonons and electrons (charge carriers). In typical cases with silicon-base devices, MFP of phonons is in an order of 100 nm while that of electrons is 1-10 nm. Thus

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Minárik, Stanislav. "Quantization of Energy in 1D Model of Crystal Lattice with Local Perturbations Induced by Ion-Beam Impact." Research Papers Faculty of Materials Science and Technology Slovak University of Technology 23, s1 (2015): 71–78. http://dx.doi.org/10.1515/rput-2015-0029.

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Abstract In this paper, we propose theoretical basis for investigation of dynamics of acoustic phonons in a thin layers containing nano-scale structural inhomogeneities. One-dimensional (1D) model of a crystal lattice was considered to reveal specific features of the processes arising in such system of phonons in equilibrium state. Standard quantization of energy of 1D ionic chain vibrating by acoustic frequencies was carried out while the presence of foreign ions in this chain was taken into account. Since only two dimensions are dominant in thin layers, only longitudinal vibrations of the ch

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Sahu, Sivabrata, and G. C. Rout. "A theoretical model study on interplay between Coulomb potential and lattice energy in graphene-on-substrate." International Journal of Computational Materials Science and Engineering 06, no. 02 (2017): 1750011. http://dx.doi.org/10.1142/s2047684117500117.

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The graphene-on-substrates breaks the sub-lattice symmetry leading to the opening of a small gap. The small band gaps can be enhanced by electron–phonon interactions by keeping strongly polarized superstrate on graphene. To describe the band gap opening in graphene, we propose a tight-binding model Hamiltonian taking into account of third-nearest-neighbor electron-hoppings. We introduce repulsive Coulomb interaction at two sub-lattices of graphene. Further, we consider phonon coupling to the electron densities centered at two sub-lattices in the presence of phonon vibration with a single frequ

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Khvesyuk, V. I., W. Qiao, and A. A. Barinov. "Kinetics of Phonon Interaction Taken into Account in Determining Thermal Conductivity of Silicon." Herald of the Bauman Moscow State Technical University. Series Natural Sciences, no. 3 (102) (June 2022): 57–68. http://dx.doi.org/10.18698/1812-3368-2022-3-57-68.

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The thorough study of the heat carriers --- quasiparticles --- phonons interaction resulted in a pioneering method for calculating the thermal conductivity of nonmetallic solids. As the interactions of phonons are much more complicated than those of usual atoms and molecules, it is necessary to take into account the presence of two types of phonons with different properties; the decay of one phonon into two or the fusion of two phonons into one as a result of interaction; the presence of two types of interaction of phonons, one of which is elastic, the other is inelastic (moreover, the type of

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Kumar, Vipin. "Relaxation Dynamics of Carriers in Graphene." Advanced Science Letters 24, no. 8 (2018): 5666–68. http://dx.doi.org/10.1166/asl.2018.12172.

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We study the damping of anomalous Rabi oscillations in monolayer graphene by means of electron–phonon interaction. Our calculations show that the electron–phonon interaction led to the novel incoherent anomalous Rabi oscillations in graphene. Conventional Rabi oscillations occur near resonance show an energy relaxation discussed elsewhere. Anomalous Rabi oscillations display almost zero energy relaxation in the presence of long-wavelength phonons at the Dirac point in the first Brillouin zone. The role of electron–phonon interaction in dephasing of anomalous Rabi oscillations is prominent far

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ZHAO, JIJUN, XIAOSHUANG CHEN, FENGQI LIU, and GUANGHOU WANG. "ELECTRON–PHONON INTERACTION AND ELECTRONIC STRUCTURE OF SMALL METAL CLUSTERS." Surface Review and Letters 03, no. 01 (1996): 489–92. http://dx.doi.org/10.1142/s0218625x96000887.

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The Su–Schrieffer–Heeger (SSH) Hamiltonian has been extended to study the electron–phonon interaction and the electronic structures of the alkali-like metal clusters. The eigen-energy levels of s valence electrons are obtained from a Hückel-like Hamiltonian including the correction of the electron–phonon interaction in the hopping integral, which is proportional to the variable of bond length. The self-consistent equations for electrons and phonons are solved adiabatically through an iteration process. The energy-level structures of an octahedral Cu6 cluster are calculated with variable electr

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Escobar, Rodrigo, Brian Smith, and Cristina Amon. "Lattice Boltzmann Modeling of Subcontinuum Energy Transport in Crystalline and Amorphous Microelectronic Devices." Journal of Electronic Packaging 128, no. 2 (2006): 115–24. http://dx.doi.org/10.1115/1.2188951.

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Numerical simulations of time-dependent energy transport in semiconductor thin films are performed using the lattice Boltzmann method applied to phonon transport. The discrete lattice Boltzmann method is derived from the continuous Boltzmann transport equation assuming first gray dispersion and then nonlinear, frequency-dependent phonon dispersion for acoustic and optical phonons. Results indicate that a transition from diffusive to ballistic energy transport is found as the characteristic length of the system becomes comparable to the phonon mean free path. The methodology is used in represen

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Zhang, Jia, Rui Qin, Wenjun Zhu, and Jan Vorberger. "Energy Relaxation and Electron–Phonon Coupling in Laser-Excited Metals." Materials 15, no. 5 (2022): 1902. http://dx.doi.org/10.3390/ma15051902.

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The rate of energy transfer between electrons and phonons is investigated by a first-principles framework for electron temperatures up to Te = 50,000 K while considering the lattice at ground state. Two typical but differently complex metals are investigated: aluminum and copper. In order to reasonably take the electronic excitation effect into account, we adopt finite temperature density functional theory and linear response to determine the electron temperature-dependent Eliashberg function and electron density of states. Of the three branch-dependent electron–phonon coupling strengths, the

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