Relevant bibliographies by topics / Photoconductor

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Photoconductor'

Author: Grafiati
Published: 4 June 2021
Last updated: 26 July 2025

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Journal articles on the topic "Photoconductor"

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Liao, Mei Yong, and Yasuo Koide. "Visible-Blind Metal-Semiconductor-Metal Structured Deep-Ultraviolet Photodetectors Using Single-Crystalline Diamond Thin Film." Materials Science Forum 546-549 (May 2007): 1759–62. http://dx.doi.org/10.4028/www.scientific.net/msf.546-549.1759.

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Metal-semiconductor-metal (MSM) planar photodiodes and photoconductors were fabricated on unintentionally doped homoepitaxial diamond thin films deposited on Ib and IIa-type diamond substrated. The MSM photoconductor on the epilayer grown on the Ib-type substrate exhibits the highest discrimination ratio up to 108 between 210 nm and visible light and a photocurrent gain around 33 at 220 nm. The persistent photoconductivity is rather week for such kind of photoconductor.
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Grynko, Oleksandr, Tristen Thibault, Emma Pineau, and Alla Reznik. "The X-ray Sensitivity of an Amorphous Lead Oxide Photoconductor." Sensors 21, no. 21 (2021): 7321. http://dx.doi.org/10.3390/s21217321.

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The photoconductor layer is an important component of direct conversion flat panel X-ray imagers (FPXI); thus, it should be carefully selected to meet the requirements for the X-ray imaging detector, and its properties should be clearly understood to develop the most optimal detector design. Currently, amorphous selenium (a-Se) is the only photoconductor utilized in commercial direct conversion FPXIs for low-energy mammographic imaging, but it is not practically feasible for higher-energy diagnostic imaging. Amorphous lead oxide (a-PbO) photoconductor is considered as a replacement to a-Se in
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Minot, C., H. Le Person, F. Alexandre, and J. F. Palmier. "Photoconduction dynamics in a GaAs/AlGaAs superlattice photoconductor." Applied Physics Letters 51, no. 20 (1987): 1626–28. http://dx.doi.org/10.1063/1.98576.

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Pacansky, J., R. J. Waltman, and R. Grygier. "An Analysis for the Composition and Film Thickness of Organic Layered Photoconductors. Part I: Complex Refractive Indices over the Infrared for Hydroxysquarilium and Chlorodiane Blue Charge Generation Dyes." Applied Spectroscopy 43, no. 7 (1989): 1233–40. http://dx.doi.org/10.1366/0003702894203426.

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The composition and film thickness of organic layered photoconductors containing the charge generation dyes hydroxysquarilium and chlorodiane blue are analyzed by specular reflectance infrared spectroscopy. The analysis involves recording the infrared spectrum of the photoconductor after the dye layer is coated onto an appropriate substrate. Since the IR spectra are recorded in a specular reflection mode, modeling is required in order to understand the relationship between reflectance and film thickness for the dye layers. Thus a dispersion analysis is used to determine the complex refractive
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Kubo, K., T. Kobayashi, S. Nagae, and T. Fujimoto. "Photoconduction Mechanism in Single-Layer Photoconductor with Metal-Free Phthalocyanine." Journal of Imaging Science and Technology 43, no. 3 (1999): 248–53. http://dx.doi.org/10.2352/j.imagingsci.technol.1999.43.3.art00010.

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Ray, Robin, and M. Z. Kabir. "Comparative Performance Evaluation of Conventional and Folded Detector Structures: Application to Perovskite X-ray Detectors." Electronics 12, no. 13 (2023): 2976. http://dx.doi.org/10.3390/electronics12132976.

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The imaging performance of a semiconductor radiation imaging detector critically depends on its photoconductor layer thickness. The conventional detector structure (i.e., a photoconductor layer is sandwiched between two parallel electrodes) needs a strict design criterion on photoconductor thickness as compared to folded detector structure for optimizing the detective quantum efficiency (DQE), which is the most important imaging performance. In this paper, the DQE performance of both folded and conventional detector structures is analyzed by incorporating the quantum noise due to random charge
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Loualiche, S., V. Parguel, H. L'haridon, L. Henry, and C. Vaudry. "InGaAs photoconductor failure observation." Electronics Letters 21, no. 23 (1985): 1101. http://dx.doi.org/10.1049/el:19850781.

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Wang, Y., R. West, and Chien Hua Yuan. "Fullerene-doped polysilane photoconductor." Journal of the American Chemical Society 115, no. 9 (1993): 3844–45. http://dx.doi.org/10.1021/ja00062a088.

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Rimai, D. S., D. J. Quesnel, L. P. DeMejo, and M. T. Regan. "Toner to Photoconductor Adhesion." Journal of Imaging Science and Technology 45, no. 2 (2001): 179–86. http://dx.doi.org/10.2352/j.imagingsci.technol.2001.45.2.art00010.

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Takahashi, K., Y. Murakami, and Daisuke Shindo. "Charging and Discharging Phenomena in Organic Photoconductors Observed Using Electron Holography." Key Engineering Materials 508 (March 2012): 315–22. http://dx.doi.org/10.4028/www.scientific.net/kem.508.315.

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The Phenomenon of Laser-Induced Discharging in an Organic Photoconductor Sample Was Directly Observed Using Electron Holography and Sophisticated Techniques for In Situ Observations. Mechanical Friction Was Used to Induce Negative Tribocharges on the Surface of the Photoconductor Sample. the Observation of Equipotential Contour Lines (i.e., the Electric Potential Distribution) outside the Specimen Revealed that the Amount of Tribocharges Was Reduced by the Laser Exposure. Computer Simulations of the Equipotential Lines Provided Useful Information for Evaluating the Quantity of Tribocharges.
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Dissertations / Theses on the topic "Photoconductor"

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Rowehl, Jill A. (Jill Annette). "Organic multilayer photoconductor utilizing a spacer layer." Thesis, Massachusetts Institute of Technology, 2008. http://hdl.handle.net/1721.1/57977.

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Thesis (S.B.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2008.<br>Cataloged from PDF version of thesis.<br>Includes bibliographical references (p. 61-62).<br>Chemosensors hold many vital applications in today's world, particularly as detectors for explosives. There is still vast room for improvement as other technologies-particularly those of explosives-continue to evolve and expand. Herein, we develop a novel device structure with the potential for much higher sensitivity. The lateral bilayer photoconductor is comprised of an exciton generation layer (
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Higgins, Erle Daniel. "Gigahertz optical mixing on a photoconductor using a single laser." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 2001. http://www.collectionscanada.ca/obj/s4/f2/dsk3/ftp05/MQ63525.pdf.

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Rabanus, David. "Development of a modular stressed Ge:Ga photoconductor focal plane array prototype." [S.l.] : [s.n.], 2001. http://deposit.ddb.de/cgi-bin/dokserv?idn=962396206.

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Hebbron, Michael Christopher. "An investigation into gallium arsenide liquid crystal light valves." Thesis, University of Salford, 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.308165.

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Ledwosinska, Elzbieta. "Design, fabrication, and characterization of a floating-gate double quantum well far-infrared photoconductor." Thesis, McGill University, 2009. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=66787.

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The design, fabrication, and characterization of a GaAs/AlGaAs double quantum well long-infrared photoconductor are reported. The double quantum well structure was designed using a 1-D Schrodinger-Poisson solver to fine-tune the material composition, thickness, and doping to control the 2-D electron gas (2DEG) subband energies, positions, carrier densities, and lifetimes of transitions. The wafer was grown commercially and devices were fabricated using cleanroom facilities at McGill and the Universite de Montreal. The device has a floating gate architecture with perpendicular
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Danziger, James Lee. "Characterization of molecular semiconductor and multilayer molecular organic photoconductor interfaces by photoelectrochemistry and surface analytical techniques." Diss., The University of Arizona, 1990. http://hdl.handle.net/10150/185217.

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Organic semiconductor thin films are of interest to us for a variety of molecular electronic applications, including solar cells, chemical sensors, and nonlinear optical devices. We have been seeking unusual new ways of controlling the composition and long-range molecular structure of these materials through the use of vacuum deposition techniques which mimic, in some ways, those used for epitaxial layer growth in inorganic materials. Thin films of perylene tetracarboxylic dianhydride (PTCDA) have been examined as electrodes and photoelectrodes on both metal and metal oxide substrates. In cont
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Kostakis, Ioannis. "Quantum-engineered semiconductor photomixers at long wavelength illumination (1.55 μm) for THz generation and detection". Thesis, University of Manchester, 2014. https://www.research.manchester.ac.uk/portal/en/theses/quantum--engineered-semiconductor-photomixers-at-long-wavelength-illumination-155-micro-metre-for-thz-generation-and-detection(2164fd28-cf88-4540-9544-33d3a6f8f310).html.

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This thesis is concerned with the characterisation, fabrication and testing of devices capable of generating and detecting terahertz (THz) radiation. Such devices are based on semiconductor photoconductors grown under low temperature (LT) conditions using the technique of Molecular Beam Epitaxy (MBE). The absorption of a pulsed or continuous wave (CW) signal by these structures in conjunction with the presence of an electric field generates photocurrent, which is fed into an antenna structure fabricated on the surface of the active layers. As a result of such a sequence, a THz signal is genera
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Glasser, Francis. "Méthodes de détection de rayonnement X pulsé pour la tomographie par transmission avec accélérateur linéaire." Grenoble 1, 1988. http://www.theses.fr/1988GRE10081.

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Etude du comportement de semi-conducteurs et d'un scintillateur comme convertisseurs de photons x en signal mesurable. Application a la tomographie industrielle utilisant un accelerateur lineaire en vue du controle non destructif d'objets denses et volumineux
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Сидор, О. М., та О. А. Сидор. "Поведінка InSe-фотоперетворювачів при впливі невеликих доз високоенергетичного гамма-випромінювання". Thesis, Сумський державний університет, 2017. http://essuir.sumdu.edu.ua/handle/123456789/64489.

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Традиційна кремнієва електроніка швидко деградує вже при порівняно помірних дозах радіації. Альтернативою при створенні радіаційно-стійких фотоперетворювачів (ФП) видимого, ближніх ІЧ- і УФ-випромінювань можуть служити кристали унікальної групи А3В6. Запропоновано фізичну модель електронних процесів, що спостерігаються у даних р-n-переходах при опроміненні: на фоні утворення простих точкових дефектів відбувалося суттєве покращення досконалості кристалічної гратки шаруватого селеніду індію внаслідок ефективного “заліковування” власних структурних дефектів.
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Lam, Dennis Kwok Wah Carleton University Dissertation Engineering Electrical. "Optoelectronic switching with GaAs photoconductors." Ottawa, 1986.

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Books on the topic "Photoconductor"

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B, Bhasin K., and United States. National Aeronautics and Space Administration., eds. Microwave response of an HEMT photoconductor. National Aeronautics and Space Administration, 1988.

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Zhao, Wei. A flat panel detector for digital radiology using self-scanned readout of X-ray photoconductor: Fundamental study of feasibility. National Library of Canada, 1993.

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C, Claspy Paul, and Lewis Research Center, eds. Microwave characteristics of interdigitated photoconductors on a HEMT structure. National Aeronautics and Space Administration, 1988.

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Guelfucci, Jean-Pierre. Contribution à l'étude des mécanismes de photoionisation et de photoconduction dans les diélectriques liquides non polaires. A.N.R.T. Université Pierre Mendès France Grenoble 2, 1986.

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5

McDonald, Steven A. Solution-processed infrared photoconductors. 2005.

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McDonald, Steven A. Solution-processed infrared photoconductors. 2005.

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7

Nalwa, Hari Singh. Handbook of Organic Conductive Molecules and Polymers, Charge-Transfer Salts, Fullerenes and Photoconductors. Wiley & Sons, Incorporated, John, 2000.

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Handbook of Organic Conductive Molecules and Polymers, Charge-Transfer Salts, Fullerenes and Photoconductors (Handbook of Organic Conductive Molecules & Polymers, Charge-). Wiley, 1997.

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Book chapters on the topic "Photoconductor"

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Weik, Martin H. "photoconductor." In Computer Science and Communications Dictionary. Springer US, 2000. http://dx.doi.org/10.1007/1-4020-0613-6_13976.

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Zentai, George. "Photoconductor Digital X-Ray Imaging." In Solar Cells and their Applications. John Wiley & Sons, Inc., 2010. http://dx.doi.org/10.1002/9780470636886.ch25.

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Thioulouse, P. "Thin Film Photoconductor-Electroluminescent Memory Display Devices." In Springer Proceedings in Physics. Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-93430-8_56.

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Katsumoto, S. "The Metal-Insulator Transition in a Persistent Photoconductor." In Springer Proceedings in Physics. Springer Berlin Heidelberg, 1988. http://dx.doi.org/10.1007/978-3-642-73554-7_8.

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Weik, Martin H. "photoconduction." In Computer Science and Communications Dictionary. Springer US, 2000. http://dx.doi.org/10.1007/1-4020-0613-6_13965.

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Weiss, David S., and Martin Abkowitz. "Organic Photoconductors." In Springer Handbook of Electronic and Photonic Materials. Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-48933-9_37.

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Weiss, David, and Martin Abkowitz. "Organic Photoconductors." In Springer Handbook of Electronic and Photonic Materials. Springer US, 2006. http://dx.doi.org/10.1007/978-0-387-29185-7_39.

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Di Marco, Piergiulio, and Gabriele Giro. "Organic Photoconductors and Photovoltaics." In Organic Conductors. CRC Press, 2022. http://dx.doi.org/10.1201/9780367811907-17.

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Kabir, M. Zahangir, and Safa Kasap. "Photoconductors for X-Ray Image Detectors." In Springer Handbook of Electronic and Photonic Materials. Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-48933-9_45.

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Downey, P. M., and J. R. Karin. "Hertzian Dipole Measurements with InP Photoconductors." In Picosecond Electronics and Optoelectronics. Springer Berlin Heidelberg, 1985. http://dx.doi.org/10.1007/978-3-642-70780-3_40.

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Conference papers on the topic "Photoconductor"

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Hellier, Kaitlin, Hamid Mirzanezhad, Molly McGrath, Paul Pryor, Ivan Mollov, and Shiva Abbaszadeh. "Optimizing parylene and photoconductor thickness in indirect conversion amorphous selenium detectors." In Physics of Medical Imaging, edited by John M. Sabol, Shiva Abbaszadeh, and Ke Li. SPIE, 2025. https://doi.org/10.1117/12.3047617.

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Benicewicz, P. K., A. J. Taylor, J. P. Roberts, N. A. Kurnit, X. C. Zhang та D. H. Auston. "Terahertz electromagnetic pulse generation using 150-μJ, 800-nm femtosecond pulses". У OSA Annual Meeting. Optica Publishing Group, 1992. http://dx.doi.org/10.1364/oam.1992.tutt3.

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Subpico-second pulses of terahertz electromagnetic radiation are generated by femtosecond optical pulses incident on a large-aperture biased photoconductor. The key advantage of a large-aperture biased photoconductor is the ability to generate high power pulses by increasing the size of the aperture of the photoconductor to accept very high optical energies and high applied bias voltages. This power scaling feature of large-aperture photoconductors has been studied by others using the 8-μJ, 620-nm optical pulses from an amplified CPM laser system. Applied bias fields up to 7 kV/cm were used on
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Eisenstadt, W. R., R. B. Hammond, D. Bowman, and R. W. Dutton. "Time-domain Measurements for Silicon Integrated Circuit Testing Using Photoconductors." In Picosecond Electronics and Optoelectronics. Optica Publishing Group, 1985. http://dx.doi.org/10.1364/peo.1985.thc5.

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Picosecond time-domain measurements of silicon integrated circuit interconnects were successfully performed using photoconductors integrated on-chip. Both bulk silicon and thin-film polycrystalline silicon photoconductors were studied. Standard integrated circuit fabrication techniques followed by shadow-masked, ion-beam irradiation were used to create photoconductor/interconnect structures. Starting materials used were 70 ft-cm n-type wafers and 16 Ω-cm p-type wafers. A subpicosecond pulsed laser system excited the photoconductors to produce and sample picosecond pulses on the Si substrate.
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Ashley, Paul R., and Jack H. Davis. "Liquid crystal spatial light modulator with amorphous silicon photoconductor." In OSA Annual Meeting. Optica Publishing Group, 1986. http://dx.doi.org/10.1364/oam.1986.fg8.

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Spatial light modulators play an important role in coherent signal processing applications, primarily as an incoherent-to-coherent light converter. In this and other applications the sensitivity and spatial resolution as well as speed are important considerations which limit performance. Reported here is a liquid crystal modulator using amorphous silicon as an ohmic photoconductor material to achieve linear modulation in a reflection mode. The thin-film layer is capable of very high resolution, &gt;95 line pairs/mm, exceeding that of most CdS photoconductors while maintaining the high speed an
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McConaghy, Chuck. "An Optically Strobed Sample and Hold Circuit*." In Picosecond Electronics and Optoelectronics. Optica Publishing Group, 1987. http://dx.doi.org/10.1364/peo.1987.wb3.

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Radiation damaged photoconductors have been shown to be useful devices for sampling repetitve electrical signals with time resolution to less than a PicoSecond1,2. However, the sampling of low repetition rate or single shot events with these photoconductors has not been possible due to the need for lock in detection methods to observe the sampled signal. In this paper, a radiation damaged photoconductor serves as the sampling element in a sample and hold circuit. It has been possible to sample single shot electrical signals with about a 10 picosecond aperture time. Once sampled the signal can
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Jesen, S., L. Thaiyotin, S. Cheirsirikul, and T. Phetchakul. "Photoconductor Diamond Film Detector." In 2008 5th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology (ECTI-CON). IEEE, 2008. http://dx.doi.org/10.1109/ecticon.2008.4600552.

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Harder, James A., and Michaelene W. Sprague. "Temperature-insensitive silicon photoconductor." In SPIE Europe Security + Defence, edited by Gary W. Kamerman, Ove K. Steinvall, Keith L. Lewis, et al. SPIE, 2009. http://dx.doi.org/10.1117/12.835861.

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Laverny, C., J. Leotin, C. Villarzel, and J. R. Birch. "Stressed Ge:Ga Photoconductor Technology." In 1985 International Technical Symposium/Europe, edited by John S. Seeley. SPIE, 1986. http://dx.doi.org/10.1117/12.951766.

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Wang, C. L., M. D. Pocha, J. D. Morse, M. S. Singh, and B. A. Davis. "Ultrafast Photoconductor Radiation Detectors." In O-E/Fibers '87, edited by Theodore E. Batchman, Richard F. Carson, Robert L. Galawa, and Henry J. Wojtunik. SPIE, 1987. http://dx.doi.org/10.1117/12.967503.

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Oh, Tae-Kwan, Jack H. Davis, and Paul R. Ashley. "Theoretical Resolution of a Thin Photoconductor Coupled Liquid Crystal Light Valve." In Spatial Light Modulators and Applications. Optica Publishing Group, 1988. http://dx.doi.org/10.1364/slma.1988.wa5.

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The hydrogenated amorphous silicon (a-Si:H) photoconductor and the nematic liquid crystal BDH-E44 combine to create a liquid crystal light valve (LCLV). The transmission of the readout light is determined by the voltage across the liquid crystal. When write light illuminates the current carrying photoconductor, the potential of each layer is rearranged through the photoconductor and liquid crystal.
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Reports on the topic "Photoconductor"

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Bickford, Justin R., Neal K. Bambha, and Wayne H. Chang. Near-room-temperature Mid-infrared Photoconductor Signal and Noise Characterization. Defense Technical Information Center, 2012. http://dx.doi.org/10.21236/ada570409.

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Yoo, S. S., S. Sivananthan, J. P. Faurie, B. Rodricks, J. Bai, and P. A. Montano. A new MBE CdTe photoconductor array detector for X-ray applications. Office of Scientific and Technical Information (OSTI), 1994. http://dx.doi.org/10.2172/432944.

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Norris, Theodore B., and John F. Whitaker. Carrier Dynamics and Defects in GaAs and Related Photoconductors. Defense Technical Information Center, 2000. http://dx.doi.org/10.21236/ada375403.

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Haegel, N. M. Transient and temperature-dependent phenomena in Ge:Be and Ge:Zn far infrared photoconductors. Office of Scientific and Technical Information (OSTI), 1985. http://dx.doi.org/10.2172/6308564.

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