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Relevant bibliographies by topics / Photocurrent switching

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Academic literature on the topic 'Photocurrent switching'

Author: Grafiati

Published: 4 June 2025

Last updated: 15 July 2025

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Journal articles on the topic "Photocurrent switching"

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Lewandowska, Kornelia, and Konrad Szaciłowski. "Molecular Photodiode and Two-channel Optoelectronic Demultiplexer based on the [60]Fullerene-porphyrin Tetrad." Australian Journal of Chemistry 64, no. 10 (2011): 1409. http://dx.doi.org/10.1071/ch11051.

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Photoelectrodes containing Langmuir–Blodget layers of [60]fullerene-porphyrin tetrad behave like photodiodes. Upon excitation within the whole absorption spectrum of the molecule they generate photocurrent, the direction of which depends on the conducting substrate potential. At negative polarization high intensity cathodic photocurrent are observed, while at positive polarization much weaker anodic photocurrents are observed. The forward-bias to reverse-bias current ratio amounts 5:1. Therefore the [60]fullerene-porphyrin tetrad is closely related to semiconductors showing photoelectrochemica

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Wang, Hua, and Xiaofeng Qian. "Ferroicity-driven nonlinear photocurrent switching in time-reversal invariant ferroic materials." Science Advances 5, no. 8 (2019): eaav9743. http://dx.doi.org/10.1126/sciadv.aav9743.

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Nonlinear optical responses to external electromagnetic field, characterized by second- and higher-order susceptibilities, play crucial roles in nonlinear optics and optoelectronics. Here, we demonstrate the possibility to achieve ferroicity-driven nonlinear photocurrent switching in time-reversal invariant multiferroics. It is enabled by the second-order current response to electromagnetic field whose direction can be controlled by both internal ferroic orders and external light polarization. Second-order direct photocurrent consists of shift current and circular photocurrent under linearly a

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Sheng, Yunwei, Ignasi Fina, Marin Gospodinov, and Josep Fontcuberta. "Bulk photovoltaic effect modulated by ferroelectric polarization back-switching." Applied Physics Letters 120, no. 24 (2022): 242901. http://dx.doi.org/10.1063/5.0094837.

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Short-circuit photocurrent due to bulk photovoltaic effect displays an oscillatory dependence on the polarization state of light. Here, we explore how the ferroelectric polarization direction in h-LuMnO3 crystals affects the oscillating short-circuit photocurrent. It is shown that after prepoling the crystal at saturation, at remanence, the direction and amplitude of photocurrent oscillations are no longer dictated by prepoling voltage but are largely modulated by polarization back-switching, here ruled by the imprint field. Thus, the light polarization dependence of photocurrent is also ruled

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Aniskevich, Y., M. Malashchonak, A. Antanovich, A. Prudnikau, G. Ragoisha, and E. Streltsov. "Photocurrent Switching on Electrophoretic CdSe QD Electrodes with Different Ligands." International Journal of Nanoscience 18, no. 03n04 (2019): 1940053. http://dx.doi.org/10.1142/s0219581x19400532.

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Photoelectrochemical behavior of oleate- and sulfide-capped CdSe QD films fabricated via electrophoretic deposition has been investigated in Na2SO3 aqueous electrolyte. The oleate substitution for sulfide led to considerable increase in photocurrent efficiency. Films of the both types show photocurrent switching under 465-nm light irradiation. The photocurrent direction switching potential strongly depends on the particle size demonstrating negative shift of the potential with size: from 0.0[Formula: see text]V for 2.4[Formula: see text]nm to [Formula: see text][Formula: see text]V for 6.3[For

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KIMURA, Shunsaku. "Switching Photocurrent Direction with Peptide-Modified Electrode." Kobunshi 54, no. 8 (2005): 570. http://dx.doi.org/10.1295/kobunshi.54.570.

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Zhou, Min, Ying Ying, Hui Huang, Yueming Tan, Wenfang Deng, and Qingji Xie. "Photoelectrochemical immunoassay of interleukin-6 based on covalent reaction-triggered photocurrent polarity switching of ZnO@fullerenol." Chemical Communications 57, no. 83 (2021): 10903–6. http://dx.doi.org/10.1039/d1cc04820a.

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Yang, Ruiying, Kang Zou, Xiaohua Zhang, Cuicui Du, and Jinhua Chen. "Target-induced photocurrent-polarity switching: a highly selective and sensitive photoelectrochemical sensing platform." Chemical Communications 55, no. 61 (2019): 8939–42. http://dx.doi.org/10.1039/c9cc03973b.

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Podborska, Agnieszka, and Konrad Szaciłowski. "Towards 'Computer-on-a-Particle' Devices: Optoelectronic 1:2 Demultiplexer Based on Nanostructured Cadmium Sulfide." Australian Journal of Chemistry 63, no. 2 (2010): 165. http://dx.doi.org/10.1071/ch09440.

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Nanocrystalline sulfur-doped cadmium sulfide (CdS) prepared by microwave synthesis was investigated. Photoelectrochemical and optical characteristics of sulfur-doped CdS exhibit the photoelectrochemical photocurrent switching effect. Depending on the wavelength and applied bias, the anodic and/or cathodic photocurrent was observed. The unusual behaviour of nanocrystalline CdS allowed the construction of a combinatorial logic system from this material.

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Warzecha, M., M. Oszajca, K. Pilarczyk, and K. Szaciłowski. "A three-valued photoelectrochemical logic device realising accept anything and consensus operations." Chemical Communications 51, no. 17 (2015): 3559–61. http://dx.doi.org/10.1039/c4cc09980j.

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Zhang, Bo, Yaqian Liu, Zhen Chen, and Xiaofang Wang. "Deformation-Tailored MoS2 Optoelectronics: Fold-Induced Band Reconstruction for Programmable Polarity Switching." Nanomaterials 15, no. 10 (2025): 727. https://doi.org/10.3390/nano15100727.

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This study proposes an innovative design strategy for molybdenum disulfide (MoS2) optoelectronic devices based on three-dimensional folded configurations. A “Z”-shaped folded MoS2 device was fabricated through mechanical exfoliation combined with a pre-strain technique on elastic substrates. Experimental investigations reveal that the geometric folding deformation induces novel photocurrent response zones near folded regions beyond the Schottky junction area via band structure reconstruction, achieving triple polarity switching (negative–positive–negative–positive) of photocurrent. This breakt

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Book chapters on the topic "Photocurrent switching"

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Pilarczyk, Kacper, Przemysław Kwolek, Agnieszka Podborska, Sylwia Gawęda, Marek Oszajca, and Konrad Szaciłowski. "Unconventional Computing Realized with Hybrid Materials Exhibiting the PhotoElectrochemical Photocurrent Switching (PEPS) Effect." In Emergence, Complexity and Computation. Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-33921-4_17.

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"Photoelectrochemical Photocurrent Switching and Related Phenomena." In Infochemistry. John Wiley & Sons, Ltd, 2012. http://dx.doi.org/10.1002/9780470710883.ch6.

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Conference papers on the topic "Photocurrent switching"

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Woodward, T. K., B. Tell, W. H. Knox, M. T. Asom, and J. B. Stark. "Low-Responsivity GaAs/AlAs Asymmetric Fabry-Perot Modulators." In Photonics in Switching. Optica Publishing Group, 1993. http://dx.doi.org/10.1364/ps.1993.sps99.

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We find that proton-implanted pin AlAs/GaAs asymmetric Fabry-Perot multiple quantum well modulators exhibit suppressed photocurrent responsivity while maintaining good modulation performance. We attribute this to a beneficial effect of the cavity resonance on an otherwise broadened exciton transition. We find photocurrent responsivity in devices implanted to 1 × 1013cm–2 to be reduced by a factor of 57 from the unimplanted case. Asymmetric self-electro-optic effect devices having significant gain (28) and output contrast ratio (8) are demonstrated.

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Tsujioka, Tsuyoshi. "Nondestructive Readout of Photochromic Memory using Photocurrent Switching." In Joint International Symposium on Optical Memory and Optical Data Storage. OSA, 2011. http://dx.doi.org/10.1364/isom_ods.2011.otud16.

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Grave, I., A. Shakouri, N. Kuze, and A. Yariv. "Switching-peak GaAs/AlGaAs multistack quantum well infrared detector." In OSA Annual Meeting. Optica Publishing Group, 1992. http://dx.doi.org/10.1364/oam.1992.mhh4.

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A novel type of intersubband GaAs/AlGaAs infrared detector for the range 6–12 μm is described. It consists of three different stacks of quantum wells, each stack designed for response at a different peak wavelength. The detector can operate in a number of modes: a) standard bound- to-continuum detector; b) wide-band intersubband detector; c) switching-peak tunable detector. All operations are controlled by the applied voltage. The device displays excellent responsivity and detectivity figures of merit. The peak-switching and tunability properties are due to the formation and readjustment of hi

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Alam, Mahbub, and Paul L. Voss. "Opto-coherent-electronics in graphene: photocurrent direction switching based on illumination wavelength." In Frontiers in Optics. OSA, 2016. http://dx.doi.org/10.1364/fio.2016.ff5c.2.

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Yi, Yaofeng, Toshimasa Umezawa, Atsushi Kanno, and Tetsuya Kawanishi. "50 GHz High Photocurrent PIN-PD and Its Thermal Effect." In 2022 27th OptoElectronics and Communications Conference (OECC) and 2022 International Conference on Photonics in Switching and Computing (PSC). IEEE, 2022. http://dx.doi.org/10.23919/oecc/psc53152.2022.9849985.

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Hong, S. C., W. Li, J. E. Oh, P. K. Bhattacharya, and J. Singh. "Demonstration of an Integrated Multiquantum Well Heterojunction Bipolar Transistor with Gain for Efficient Low Power Optical Switching." In Quantum Wells for Optics and Opto-Electronics. Optica Publishing Group, 1989. http://dx.doi.org/10.1364/qwoe.1989.tub6.

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An integrated low power optical device with cascadable properties is essential for general purpose optical processing systems. We propose and demonstrate such a device by placing an intrinsic GaAs/AlGaAs multiquantum well structure in the base collector region of an n- p-i-n heterojunction bipolar transistor. A gain of 50 is obtained by the MBE grown devices and efficient switching occurs due to the amplification of the negative resistance region of the exciton based photocurrent.

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Chippindale, C. L., P. E. Jessop, and S. K. Kurtz. "Photonic switching in AlGaAs large optical cavity laser structures." In OSA Annual Meeting. Optica Publishing Group, 1989. http://dx.doi.org/10.1364/oam.1989.tht3.

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In a large optical cavity (LOC) diode laser structure, a relatively thick (2 μm) and lightly doped waveguide layer is grown adjacent to the laser's active layer. Such a structure is attractive for use as an optical waveguide device or a dual mode laser/detector.1 In this experiment an AlGaAs liquid phase epitaxy grown LOC structure was used as a photonic switch, employing the Franz-Keldysh effect. The electric field-induced shift in the absorption edge was measured by recording the transmission spectrum of 1.5-mm long waveguides for different reverse bias voltages. Based on this, a diode laser

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Kiyan, Tuba, Christof Brillert, and Christian Boit. "Timing Characterization of a Tester Operated Integrated Circuit by Continuous and Pulsed Laser Stimulation." In ISTFA 2010. ASM International, 2010. http://dx.doi.org/10.31399/asm.cp.istfa2010p0211.

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Abstract The scope of this work is to investigate the timing characteristics of a state of the art fully functional IC through continuous wave (CW) and pulsed laser stimulation. The propagation delay of a gate depends on the drain current of nMOS and pMOS transistors, load capacitance and supply voltage. Localized photocurrent induced by laser beam alters some of these electrical characteristics, resulting in a change in the switching time of the gate. In addition to the desired local timing influence, a global effect on the timing throughout the full scanning period occurs as secondary phenom

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Kwon, O. K., K. Kim, K. S. Hyun, J. H. Baek, B. Lee, and E. H. Lee. "Non-biased all-optical bistable device having a p-i-n-i-p diode within asymmetric Fabry-Perot cavity structures." In The European Conference on Lasers and Electro-Optics. Optica Publishing Group, 1996. http://dx.doi.org/10.1364/cleo_europe.1996.cthd6.

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Recently, devices which show non-biased optical bistability (NOB) have been proposed with practical advantages such as low switching energy, low power dissipation, and very simple layout.1-2 For NOB operation, negative differential resistance (NDR) and the photocurrent (Iph) peak at forward bias region are essential. For the optimization of the NOB device performance, both of large electric field change and sufficient absorption change should be achieved under the only source of the potential, the built-in potential (V bt ) due to the p-i-n diode structure.2 In this work, to induce strong ligh

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10

Rosencher, E., P. Bois, J. Y. Duboz, B. Vinter, and J. Nagle. "Multiquantum well infrared detectors." In The European Conference on Lasers and Electro-Optics. Optica Publishing Group, 1994. http://dx.doi.org/10.1364/cleo_europe.1994.ctun1.

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Carrier confinement in ultrathin semiconductor heterostructures leads to energy quantization. These artificial energy levels can be tailored to match any optical transition in the 3–20-µm-photon wavelength range by adjusting the quantum well width and the barrier composition. Optical transitions between bound and extended levels of these quantum wells give rise to a photocurrent, which is exploited for photon detection in Quantum Well Infrared Photoconductors (QWIPs). In this communication, we summarize the present understanding of the physics of QWIP detection: photoexcited carrier emission a

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