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Journal articles on the topic 'Photocurrent switching'

Author: Grafiati

Published: 4 June 2025

Last updated: 23 June 2025

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1

Lewandowska, Kornelia, and Konrad Szaciłowski. "Molecular Photodiode and Two-channel Optoelectronic Demultiplexer based on the [60]Fullerene-porphyrin Tetrad." Australian Journal of Chemistry 64, no. 10 (2011): 1409. http://dx.doi.org/10.1071/ch11051.

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Photoelectrodes containing Langmuir–Blodget layers of [60]fullerene-porphyrin tetrad behave like photodiodes. Upon excitation within the whole absorption spectrum of the molecule they generate photocurrent, the direction of which depends on the conducting substrate potential. At negative polarization high intensity cathodic photocurrent are observed, while at positive polarization much weaker anodic photocurrents are observed. The forward-bias to reverse-bias current ratio amounts 5:1. Therefore the [60]fullerene-porphyrin tetrad is closely related to semiconductors showing photoelectrochemical photocurrent switching effect and is a promising material for molecular optoelectronics. It can be used as a simple molecular photodiode. Assignment of logic values to polarization of the photoelectrode and to light and photocurrent pulses results in a very efficient two-channel optoelectronic demultiplexer.

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2

Wang, Hua, and Xiaofeng Qian. "Ferroicity-driven nonlinear photocurrent switching in time-reversal invariant ferroic materials." Science Advances 5, no. 8 (2019): eaav9743. http://dx.doi.org/10.1126/sciadv.aav9743.

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Nonlinear optical responses to external electromagnetic field, characterized by second- and higher-order susceptibilities, play crucial roles in nonlinear optics and optoelectronics. Here, we demonstrate the possibility to achieve ferroicity-driven nonlinear photocurrent switching in time-reversal invariant multiferroics. It is enabled by the second-order current response to electromagnetic field whose direction can be controlled by both internal ferroic orders and external light polarization. Second-order direct photocurrent consists of shift current and circular photocurrent under linearly and circularly polarized light irradiation, respectively. We elucidate the microscopic mechanism in a representative class of two-dimensional multiferroic materials using group theoretical analyses and first-principles theory. The complex interplay of symmetries, shift vector, and Berry curvature governs the fundamental properties and switching behavior of shift current and circular photocurrent. Ferroicity-driven nonlinear photocurrent switching will open avenues for realizing nonlinear optoelectronics, nonlinear multiferroics, etc., using the coupled ferroic orders and nonlinear responses of ferroic materials under external field.

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3

Sheng, Yunwei, Ignasi Fina, Marin Gospodinov, and Josep Fontcuberta. "Bulk photovoltaic effect modulated by ferroelectric polarization back-switching." Applied Physics Letters 120, no. 24 (2022): 242901. http://dx.doi.org/10.1063/5.0094837.

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Short-circuit photocurrent due to bulk photovoltaic effect displays an oscillatory dependence on the polarization state of light. Here, we explore how the ferroelectric polarization direction in h-LuMnO3 crystals affects the oscillating short-circuit photocurrent. It is shown that after prepoling the crystal at saturation, at remanence, the direction and amplitude of photocurrent oscillations are no longer dictated by prepoling voltage but are largely modulated by polarization back-switching, here ruled by the imprint field. Thus, the light polarization dependence of photocurrent is also ruled by the imprint field. The impact of these effects on the determination of the Glass coefficients of the material is discussed.

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4

Aniskevich, Y., M. Malashchonak, A. Antanovich, A. Prudnikau, G. Ragoisha, and E. Streltsov. "Photocurrent Switching on Electrophoretic CdSe QD Electrodes with Different Ligands." International Journal of Nanoscience 18, no. 03n04 (2019): 1940053. http://dx.doi.org/10.1142/s0219581x19400532.

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Photoelectrochemical behavior of oleate- and sulfide-capped CdSe QD films fabricated via electrophoretic deposition has been investigated in Na2SO3 aqueous electrolyte. The oleate substitution for sulfide led to considerable increase in photocurrent efficiency. Films of the both types show photocurrent switching under 465-nm light irradiation. The photocurrent direction switching potential strongly depends on the particle size demonstrating negative shift of the potential with size: from 0.0[Formula: see text]V for 2.4[Formula: see text]nm to [Formula: see text][Formula: see text]V for 6.3[Formula: see text]nm.

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5

KIMURA, Shunsaku. "Switching Photocurrent Direction with Peptide-Modified Electrode." Kobunshi 54, no. 8 (2005): 570. http://dx.doi.org/10.1295/kobunshi.54.570.

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6

Zhou, Min, Ying Ying, Hui Huang, Yueming Tan, Wenfang Deng, and Qingji Xie. "Photoelectrochemical immunoassay of interleukin-6 based on covalent reaction-triggered photocurrent polarity switching of ZnO@fullerenol." Chemical Communications 57, no. 83 (2021): 10903–6. http://dx.doi.org/10.1039/d1cc04820a.

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7

Yang, Ruiying, Kang Zou, Xiaohua Zhang, Cuicui Du, and Jinhua Chen. "Target-induced photocurrent-polarity switching: a highly selective and sensitive photoelectrochemical sensing platform." Chemical Communications 55, no. 61 (2019): 8939–42. http://dx.doi.org/10.1039/c9cc03973b.

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8

Podborska, Agnieszka, and Konrad Szaciłowski. "Towards 'Computer-on-a-Particle' Devices: Optoelectronic 1:2 Demultiplexer Based on Nanostructured Cadmium Sulfide." Australian Journal of Chemistry 63, no. 2 (2010): 165. http://dx.doi.org/10.1071/ch09440.

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Nanocrystalline sulfur-doped cadmium sulfide (CdS) prepared by microwave synthesis was investigated. Photoelectrochemical and optical characteristics of sulfur-doped CdS exhibit the photoelectrochemical photocurrent switching effect. Depending on the wavelength and applied bias, the anodic and/or cathodic photocurrent was observed. The unusual behaviour of nanocrystalline CdS allowed the construction of a combinatorial logic system from this material.

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9

Warzecha, M., M. Oszajca, K. Pilarczyk, and K. Szaciłowski. "A three-valued photoelectrochemical logic device realising accept anything and consensus operations." Chemical Communications 51, no. 17 (2015): 3559–61. http://dx.doi.org/10.1039/c4cc09980j.

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10

Zhang, Bo, Yaqian Liu, Zhen Chen, and Xiaofang Wang. "Deformation-Tailored MoS2 Optoelectronics: Fold-Induced Band Reconstruction for Programmable Polarity Switching." Nanomaterials 15, no. 10 (2025): 727. https://doi.org/10.3390/nano15100727.

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This study proposes an innovative design strategy for molybdenum disulfide (MoS2) optoelectronic devices based on three-dimensional folded configurations. A “Z”-shaped folded MoS2 device was fabricated through mechanical exfoliation combined with a pre-strain technique on elastic substrates. Experimental investigations reveal that the geometric folding deformation induces novel photocurrent response zones near folded regions beyond the Schottky junction area via band structure reconstruction, achieving triple polarity switching (negative–positive–negative–positive) of photocurrent. This breakthrough overcomes the single-polarity separation mechanism limitation in conventional planar devices. Scanning photocurrent microscopy demonstrates a 40-fold enhancement in photocurrent intensity at folded regions compared to flat areas, attributed to the optimization of carrier separation efficiency through a pn junction-like built-in electric field induced by the three-dimensional configuration. Voltage-modulation experiments show that negative bias (−150 mV) expands positive response regions, while +200 mV bias induces a global negative response, revealing a dynamic synergy between folding deformation and electric field regulation. Theoretical analysis identifies that the band bending and built-in electric field in folded regions constitutes the physical origin of multiple polarity reversals. This work establishes a design paradigm integrating “geometric deformation-band engineering” for regulating optoelectronic properties of two-dimensional materials, demonstrating significant application potential in programmable photoelectric sensing and neuromorphic devices.

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11

Ryzhkov, Nikolay V., Veronika Yu Yurova, Sviatlana A. Ulasevich, and Ekaterina V. Skorb. "Photoelectrochemical photocurrent switching effect on a pristine anodized Ti/TiO2 system as a platform for chemical logic devices." RSC Advances 10, no. 21 (2020): 12355–59. http://dx.doi.org/10.1039/d0ra00205d.

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12

Yin, Hong-Ju, and Ke-Zhi Wang. "Porous Electropolymerized Films of Ruthenium Complex: Photoelectrochemical Properties and Photoelectrocatalytic Synthesis of Hydrogen Peroxide." Molecules 29, no. 3 (2024): 734. http://dx.doi.org/10.3390/molecules29030734.

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The photoelectrochemical cells (PECs) performing high-efficiency conversions of solar energy into both electricity and high value-added chemicals are highly desirable but rather challenging. Herein, we demonstrate that a PEC using the oxidatively electropolymerized film of a heteroleptic Ru(II) complex of [Ru(bpy)(L)2](PF6)2 Ru1 {bpy and L stand for 2,2′-bipyridine and 1-phenyl-2-(4-vinylphenyl)-1H-imidazo[4,5-f][1,10]phenanthroline respectively}, polyRu1, as a working electrode performed both efficient in situ synthesis of hydrogen peroxide and photocurrent generation/switching. Specifically, when biased at −0.4 V vs. saturated calomel electrode and illuminated with 100 mW·cm−2 white light, the PEC showed a significant cathodic photocurrent density of 9.64 μA·cm−2. Furthermore, an increase in the concentrations of quinhydrone in the electrolyte solution enabled the photocurrent polarity to switch from cathodic to anodic, and the anodic photocurrent density reached as high as 11.4 μA·cm−2. Interestingly, in this single-compartment PEC, the hydrogen peroxide yield reached 2.63 μmol·cm−2 in the neutral electrolyte solution. This study will serve as a guide for the design of high-efficiency metal-complex-based molecular systems performing photoelectric conversion/switching and photoelectrochemical oxygen reduction to hydrogen peroxide.

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13

Meng, Leixia, Yanmei Li, Ruiying Yang, Xiaohua Zhang, Cuicui Du, and Jinhua Chen. "A sensitive photoelectrochemical assay of miRNA-155 based on a CdSe QDs//NPC-ZnO polyhedra photocurrent-direction switching system and target-triggered strand displacement amplification strategy." Chemical Communications 55, no. 15 (2019): 2182–85. http://dx.doi.org/10.1039/c8cc09411j.

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A new photoelectrochemical biosensor based on a CdSe QD//NPC-ZnO polyhedra photocurrent-direction switching system and a target-triggered strand displacement amplification strategy was developed for the detection of miRNA-155.

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14

Antuch, Manuel, Pierre Millet, Akihide Iwase, and Akihiko Kudo. "The role of surface states during photocurrent switching: Intensity modulated photocurrent spectroscopy analysis of BiVO4 photoelectrodes." Applied Catalysis B: Environmental 237 (December 2018): 401–8. http://dx.doi.org/10.1016/j.apcatb.2018.05.011.

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15

Oszajca, Marek F., Keri L. McCall, Neil Robertson, and Konrad Szaciłowski. "Photocurrent Switching Effects in TiO2 Modified with Ruthenium Polypyridine Complexes." Journal of Physical Chemistry C 115, no. 24 (2011): 12187–95. http://dx.doi.org/10.1021/jp201805t.

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16

Shan, Bing, Animesh Nayak, Olivia F. Williams, et al. "Excitation energy-dependent photocurrent switching in a single-molecule photodiode." Proceedings of the National Academy of Sciences 116, no. 33 (2019): 16198–203. http://dx.doi.org/10.1073/pnas.1907118116.

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The direction of electron flow in molecular optoelectronic devices is dictated by charge transfer between a molecular excited state and an underlying conductor or semiconductor. For those devices, controlling the direction and reversibility of electron flow is a major challenge. We describe here a single-molecule photodiode. It is based on an internally conjugated, bichromophoric dyad with chemically linked (porphyrinato)zinc(II) and bis(terpyridyl)ruthenium(II) groups. On nanocrystalline, degenerately doped indium tin oxide electrodes, the dyad exhibits distinct frequency-dependent, charge-transfer characters. Variations in the light source between red-light (∼1.9 eV) and blue-light (∼2.7 eV) excitation for the integrated photodiode result in switching of photocurrents between cathodic and anodic. The origin of the excitation frequency-dependent photocurrents lies in the electronic structure of the chromophore excited states, as shown by the results of theoretical calculations, laser flash photolysis, and steady-state spectrophotometric measurements.

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17

Wang, Xiuhua, Mingwang Shao, Guang Shao, Yan Fu, and Shaowu Wang. "Reversible and efficient photocurrent switching of ultra-long polypyrrole nanowires." Synthetic Metals 159, no. 3-4 (2009): 273–76. http://dx.doi.org/10.1016/j.synthmet.2008.09.019.

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18

Lee, Jin Hee, Hamza Zad Gul, Hyun Kim, et al. "Photocurrent Switching of Monolayer MoS2 Using a Metal–Insulator Transition." Nano Letters 17, no. 2 (2017): 673–78. http://dx.doi.org/10.1021/acs.nanolett.6b03689.

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19

Xue, Ya, Hai Ping He, and Zhi Zhen Ye. "p-Type Field Effect Transistor and UV-Photoconductive Characteristics of Na Doped ZnMgO Thin Films." Advanced Materials Research 668 (March 2013): 681–85. http://dx.doi.org/10.4028/www.scientific.net/amr.668.681.

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In this study, the authors have presented results for fabricated ZnO based FET and the UV-photoconductive characteristics of Na doped ZnMgO thin ﬁlms. The electrical measurements confirmed that the conductivity of the Na doped ZnMgO thin ﬁlm is p-type, and the carrier mobility was estimated to be 2.3 cm2V-1S-1. Moreover, after exposed to the 365 nm ultraviolet light, the Na doped ZnMgO thin ﬁlms still exhibited p-type behavior under gate voltage ranging from -5 to 2 V, and the Id increased a little while the carrier mobility did not change much. The photocurrent was measured under a bias of 6 V in air at room temperature. The films performed a higher current intensity after the illumination. The instantaneous rise of the photocurrent was completed when exposed to the 365 nm ultraviolet for 20 s, after switching the ultraviolet off the photocurrent decayed in a slower rate. The enhance rate of photocurrent was about 1.33 %. Conclusively, Na is a considerable acceptor dopant for making high quality p-type ZnO films, and the tiny change in the photocurrent of p-type Na doped ZnMgO thin ﬁlm made it relatively stable when fabricating LEDs and other optoelectronic devices.

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20

Gao, Rong Li, Chun Lin Fu, Wei Cai, et al. "Enhancement of Oxygen Vacancies Induced Photovoltaic Effects in Bi_0.9La_0.1FeO₃ Thin Films." Materials Science Forum 815 (March 2015): 176–82. http://dx.doi.org/10.4028/www.scientific.net/msf.815.176.

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The photovoltaic effect in Ag/Bi0.9La0.1FeO3/La0.7Sr0.3MnO3heterostructures was investigated and the short circuit photocurrent was found to be strongly dependent on the polarization orientation and oxygen vacancies (VOs) distribution. The photocurrent direction was switched accompanying polarization switching. Besides, according to manipulate theVOsaccumulated at either the Ag/Bi0.9La0.1FeO3or the Bi0.9La0.1FeO3/La0.7Sr0.3MnO3interface by electric pulses, obvious enhancement of photovoltaic effects was obtained. These results can be explained well using the concepts of drift current and diffusion current controlled by the combination of oxygen vacancies and polarization. This work provides deep insights into the nature of photovoltaic effects in ferroelectric films, and will facilitate the advanced design devices combining spintronic, electronic, and optical functionalities.

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21

Yang, Ruiying, and Jie Liu. "Sensitive and selective photoelectrochemical immunosensing platform based on potential-induced photocurrent-direction switching strategy and a direct Z-scheme CdS//hemin photocurrent-direction switching system." Journal of Electroanalytical Chemistry 873 (September 2020): 114346. http://dx.doi.org/10.1016/j.jelechem.2020.114346.

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22

Ma, Xingfa, Caiwei Li, Xintao Zhang, Mingjun Gao, You Wang, and Guang Li. "Interface Optimisation of the Fe2O3/C3N4 Heterojunction with Metal Nanoparticles and Their Negative and Positive Photoelectric Responses in a Broadband Light Spectrum Range." Coatings 14, no. 12 (2024): 1595. https://doi.org/10.3390/coatings14121595.

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In order to improve the charge transfer properties and reduce the recombination of photogenerated carriers, an Fe2O3/C3N4 heterojunction was constructed to increase the built-in field. The grain boundary of the Fe2O3/C3N4 nanocomposite was filled with Cu, Au, Pt, and Pd nanoparticles using in situ synthesis. The nanometal-modified heterostructures showed good absorption in the visible and near-infrared (NIR) regions. The photocurrent responses to the light sources with wavelengths of 405, 532, 650, 780, 808, 980, and 1064 nm were investigated using Au electrodes. The results indicated that the nanocomposite exhibits photocurrent switching behaviour towards the visible-light and NIR regions. Interestingly, the reversible photocurrent response phenomenon (transition from negative to positive photoconductivity) was observed before and after passivation of the grain boundary defects of the Fe2O3/C3N4 heterojunction with metal nanoparticles. The physical mechanisms involved were discussed. The Cu nanomaterials played donor effects in the interfacial tailoring of the Fe2O3/C3N4 heterojunction since Cu nanoparticles possess a high concentration of free electrons. It was shown that defects in the nanocomposites play an important role in the photoelectric behaviour and that modulation of the defects not only enhances photocurrent acquisition but also determines the polarity of the photocurrent. This study provides useful guidance not only for microstructure modulation and interdisciplinary applications of the materials themselves but also for the study of light–matter interactions.

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23

Yan, Sen Lin. "Control of a Chaotic Semiconductor Laser via Modulating Photocurrent." Applied Mechanics and Materials 336-338 (July 2013): 1271–74. http://dx.doi.org/10.4028/www.scientific.net/amm.336-338.1271.

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A novel chaos-control method of laser is presented by performing a path of photoelectric delayed nonlinear feedback. Two chaos-control models of injected semiconductor laser are studied by modulating the nonlinear and linear photoelectric delayed controllers. Firstly, by periodic modulation of the linear photocurrent under the condition of nonlinear control, the laser behavior can be brought into a dual-period, or multi-periodic state. Secondly, dynamical chaos-control is achieved successfully by switching the controllers.

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24

Hu, Taozheng, Jingyu Wu, Diyi Han, et al. "Dual plasmonic nanostructures for switching polarity of hot electron-induced photocurrent." Nanoscale 12, no. 27 (2020): 14668–75. http://dx.doi.org/10.1039/c9nr10413e.

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We report on the experimental investigation of polarity-switchable hot electron-induced photocurrents in dual-plasmonic nanostructures, consisting of two layers of gold nanoparticles (AuNPs) separated by a TiO<sub>2</sub> film.

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25

Szaciłowski, Konrad, and Wojciech Macyk. "Photoelectrochemical Photocurrent Switching Effect: A New Platform for Molecular Logic Devices." CHIMIA International Journal for Chemistry 61, no. 12 (2007): 831–34. http://dx.doi.org/10.2533/chimia.2007.831.

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26

Gawȩda, Sylwia, Graẑyna Stochel, and Konrad Szaciłowski. "Photosensitization and Photocurrent Switching in Carminic Acid/Titanium Dioxide Hybrid Material." Journal of Physical Chemistry C 112, no. 48 (2008): 19131–41. http://dx.doi.org/10.1021/jp804700d.

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27

Petrov, E. G., V. O. Leonov, and V. Snitsarev. "Transient photocurrent in molecular junctions: Singlet switching on and triplet blocking." Journal of Chemical Physics 138, no. 18 (2013): 184709. http://dx.doi.org/10.1063/1.4803697.

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28

Park, Y. A., K. D. Sung, C. J. Won, J. H. Jung та N. Hur. "Bipolar resistance switching and photocurrent in a BaTiO3-δ thin film". Journal of Applied Physics 114, № 9 (2013): 094101. http://dx.doi.org/10.1063/1.4819800.

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29

Bansal, Himanshu, Gur Pyari, and Sukhdev Roy. "Co-expressing fast channelrhodopsin with step-function opsin overcomes spike failure due to photocurrent desensitization in optogenetics: a theoretical study." Journal of Neural Engineering 19, no. 2 (2022): 026032. http://dx.doi.org/10.1088/1741-2552/ac6061.

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Abstract Objective. A fundamental challenge in optogenetics is to elicit long-term high-fidelity neuronal spiking with negligible heating. Fast channelrhodopsins (ChRs) require higher irradiances and cause spike failure due to photocurrent desensitization under sustained illumination, whereas, more light-sensitive step-function opsins (SFOs) exhibit prolonged depolarization with insufficient photocurrent and fast response for high-fidelity spiking. Approach. We present a novel method to overcome this fundamental limitation by co-expressing fast ChRs with SFOs. A detailed theoretical analysis of ChETA co-expressed with different SFOs, namely ChR2(C128A), ChR2(C128S), stabilized step-function opsin (SSFO) and step-function opsin with ultra-high light sensitivity (SOUL), expressing hippocampal neurons has been carried out by formulating their accurate theoretical models. Main results. ChETA-SFO-expressing hippocampal neurons shows more stable photocurrent that overcomes spike failure. Spiking fidelity in these neurons can be sustained even at lower irradiances of subsequent pulses (77% of initial pulse intensity in ChETA-ChR2(C128A)-expressing neurons) or by using red-shifted light pulses at appropriate intervals. High-fidelity spiking upto 60 Hz can be evoked in ChETA-ChR2(C128S), ChETA-SSFO and ChETA-SOUL-expressing neurons, which cannot be attained with only SFOs. Significance. The present study provides important insights about photostimulation protocols for bi-stable switching of neurons. This new approach provides a means for sustained low-power, high-frequency and high-fidelity optogenetic switching of neurons, necessary to study various neural functions and neurodegenerative disorders, and enhance the utility of optogenetics for biomedical applications.

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Sun, Bin, Yun Ze Long, Meng Meng Li, et al. "Synthesis, Structural and Photoelectrical Properties of Self-Assembled Gold-Poly(3,4-Ethylenedioxythiophene) Nanowires and Nanocables." Advanced Materials Research 650 (January 2013): 200–205. http://dx.doi.org/10.4028/www.scientific.net/amr.650.200.

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Gold-poly (3,4-ethylenedioxythiophene) (Au-PEDOT) nanowires with Au nanoparticles embedded in the polymer matrix and polyvinylpyrrolidone (PVP) modified Au-PEDOT coaxial nanocables with a core-shell structure have been synthesized by a new and facile self-assembly method. The morphology and structure features of the composites were characterized by transmission electron microscopy, selected-area electron diffraction, and energy-dispersive x-ray spectrometry. The room-temperature electrical conductivity of the casted composite films was about 0.21 S/cm. Photoresponse of the films were also investigated with respect to wide potential applications of the multifunctional composites. Clear photocurrent switching characteristic during switching on/off of a xenon lamp was observed.

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Strel'chuk, Anatoly M., Baptiste Berenguier, Eugene B. Yakimov, and Laurent Ottaviani. "Recombination Processes in 4H-SiC pn Structures." Materials Science Forum 858 (May 2016): 345–48. http://dx.doi.org/10.4028/www.scientific.net/msf.858.345.

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Commercial 4H-SiC p+n structures with an uncompensated donor concentration (Nd-Na) of ~1.5∙1015 cm-3 in the n-type epitaxial layer are studied. The measurement of the photocurrent, electron beam induced current and transient switching characteristics (from forward to reverse voltage), altogether showed that the value of the hole diffusion length, about 2 μm at room temperature, increases to at least 7 μm at 620 K.

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Sabeth, Farzana, Rahima Khaton, Md Serajul Islam, Toshifumi Iimori, and Nobuhiro Ohta. "Reversible Photocurrent Switching in Ionic and Superionic Conductors of Polycrystalline Silver Iodide." Journal of Physical Chemistry C 122, no. 47 (2018): 26790–96. http://dx.doi.org/10.1021/acs.jpcc.8b06331.

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Malashchonak, М. V., E. A. Streltsov, A. V. Mazanik, et al. "Size-dependent photocurrent switching in chemical bath deposited CdSe quantum dot films." Journal of Solid State Electrochemistry 21, no. 3 (2016): 905–13. http://dx.doi.org/10.1007/s10008-016-3442-x.

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Beranek, Radim, and Horst Kisch. "A Hybrid Semiconductor Electrode for Wavelength-Controlled Switching of the Photocurrent Direction." Angewandte Chemie International Edition 47, no. 7 (2008): 1320–22. http://dx.doi.org/10.1002/anie.200701103.

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35

Fong, Chee Yong, Sha Shiong Ng, NurFahana Mohd Amin, Fong Kwong Yam, and Zainuriah Hassan. "Sol-gel-derived gallium nitride thin films for ultraviolet photodetection." Microelectronics International 36, no. 1 (2019): 8–13. http://dx.doi.org/10.1108/mi-12-2017-0074.

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Purpose This study aims to explore the applicability of the sol-gel-derived GaN thin films for UV photodetection. Design/methodology/approach GaN-based ultraviolet (UV) photodetector with Pt Schottky contacts was fabricated and its applicability was investigated. The current-voltage (I-V) characteristics of the GaN-based UV photodetector under the dark current and photocurrent were measured. Findings The ideality factors of GaN-based UV photodetector under dark current and photocurrent were 6.93 and 5.62, respectively. While the Schottky barrier heights (SBH) for GaN-based UV photodetector under dark current and photocurrent were 0.35 eV and 0.34 eV, respectively. The contrast ratio and responsivity of this UV photodetector measured at 5 V were found to be 1.36 and 1.68 μA/W, respectively. The photoresponse as a function of time was measured by switching the UV light on and off continuously at different forward biases of 1, 3 and 6 V. The results showed that the fabricated UV photodetector has reasonable stability and repeatability. Originality/value This work demonstrated that GaN-based UV photodetector can be fabricated by using the GaN thin film grown by low-cost and simple sol-gel spin coating method.

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Sizov, F. F., J. V. Gumenjuk-Sichevska, S. N. Danilov, and Z. F. Tsybrii. "Spin dependent polarization response in HgCdTe hot-electron bolometers." Semiconductor Physics, Quantum Electronics and Optoelectronics 25, no. 3 (2022): 254–61. http://dx.doi.org/10.15407/spqeo25.03.254.

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The paper reports the detection of strong polarization-dependent photo-responses in direct narrow-gap (Eg = 0.084 eV at T = 80 K) HgCdTe thin-layer biased and unbiased hot-electron bolometers (HEBs) with receiving antennas under elliptically polarized THz radiation. The observed effects are assumed to be due to the Rashba spin splitting in HgCdTe, caused by large spin-orbit interactions. The studied detectors demonstrate free-carrier polarization-dependent sensitivity to laser radiation with h 0.0044 eV (ν = 1.07 THz) and 0.0025 eV (ν = 0.6 THz), i.e., with photon energies much less than the band-gap (hν << Eg) at T = 80 and 300 K. The polarization-dependent photocurrent in HgCdTe HEBs with and without applied external constant electric field is shown to have angular dependence of photocurrent with directional reversal on switching the photon helicity.

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Paul, Subir, Niladri Hazra, Soumyajit Hazra, and Arindam Banerjee. "Carbon dot mediated trihybrid formation by reduction of GO and in situ gold nanocluster fabrication: photo-switching behaviour and degradation of chemical warfare agent stimulants." Journal of Materials Chemistry C 8, no. 44 (2020): 15735–41. http://dx.doi.org/10.1039/d0tc03554h.

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Wei, Maocai, Meifeng Liu, Lun Yang, et al. "Electro–opto–mechano driven reversible multi-state memory devices based on photocurrent in Bi0.9Eu0.1FeO3/La0.67Sr0.33MnO3/PMN-PT heterostructures." RSC Advances 10, no. 27 (2020): 15784–93. http://dx.doi.org/10.1039/d0ra00725k.

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Yasutomi, Shiro, Tomoyuki Morita, and Shunsaku Kimura. "pH-Controlled Switching of Photocurrent Direction by Self-Assembled Monolayer of Helical Peptides." Journal of the American Chemical Society 127, no. 42 (2005): 14564–65. http://dx.doi.org/10.1021/ja055624p.

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Yang, Yiming, Xingyue Peng, and Dong Yu. "High intensity induced photocurrent polarity switching in lead sulfide nanowire field effect transistors." Nanotechnology 25, no. 19 (2014): 195202. http://dx.doi.org/10.1088/0957-4484/25/19/195202.

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Chen, Da, and Jinghong Li. "Interfacial Functionalization of TiO2 with Smart Polymers: pH-Controlled Switching of Photocurrent Direction." Journal of Physical Chemistry C 114, no. 23 (2010): 10478–83. http://dx.doi.org/10.1021/jp100969a.

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Meng, T. T., L. X. Xue, H. Wang, K. Z. Wang, and M. Haga. "pH controllable photocurrent switching and molecular half-subtractor calculations based on a monolayer composite film of a dinuclear RuII complex and graphene oxide." Journal of Materials Chemistry C 5, no. 13 (2017): 3390–96. http://dx.doi.org/10.1039/c7tc00494j.

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A monolayer film composed of graphene oxide and a dinuclear Ru(ii) complex, acts as multiple logic gates performing half-subtractor molecular computations by using pH and potential as inputs and photocurrent as output.

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Zhu, K., G. Li, D. Johnstone, et al. "High Power Photoconductive Switch of 4H-SiC with Damage-Free Electrodes by Using n⁺-GaN Subcontact Layer." Materials Science Forum 527-529 (October 2006): 1387–90. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1387.

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4H SiC high power photoconductive semiconductor switching devices were fabricated. A highly doped n+-GaN subcontact epilayer was grown on SiC by organometallic vapor phase epitaxy in order to improve ohmic contact and avoid contact damage or degradation due to current filamentation, under high power operation. With an n+-GaN subcontact layer, the contact resistance was reduced and current crowding alleviated. Therefore the electrodes were not damaged or degraded at high power operation. Photocurrent up to 200 A and breakdown voltage up to 2900 V have been observed for the devices.

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Long, Xiao, Huan Tan, Florencio Sánchez, Ignasi Fina, and Josep Fontcuberta. "Disentangling electronic and thermal contributions to light-induced resistance switching in BaTiO₃ ferroelectric tunnel junction." Journal of Applied Physics 132, no. 21 (2022): 214103. http://dx.doi.org/10.1063/5.0125040.

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In the presence of asymmetric potential barriers, such as those created by imprint fields, ferroelectric polarization can be reversed by light due to the photoinduced suppression of polarization. Both thermal effects and photocarrier-induced polarization screening may agree with this experimental observation, challenging its understanding. Here, we explore light-induced ferroelectric polarization switching in BaTiO3 thin films. Time-dependent photocurrent and photoresistance experiments at different wavelengths indicate that the optical switch of polarization is mainly driven by photocarriers rather than thermal effects. The effect of light on sample polarization is found to be relatively slow and that an illumination period as long as ≈100 s is required to achieve complete switching when using a 405 nm light wavelength and 1.4 W/cm2 power density. It is shown that this response is governed by the concentration of photo-generated charges, which is low due to the reduced light absorption of BaTiO3 films at the explored wavelengths. Our conclusions can help us to better design optically switching devices based on ferroelectric materials.

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Ikuno, Takashi, and Masaki Hasegawa. "Wavelength-dependent switching of photocurrent polarity in a semiconductor film with bifacial band bendings." Applied Physics Express 9, no. 6 (2016): 062201. http://dx.doi.org/10.7567/apex.9.062201.

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Patel, Tarun, Junichi Okamoto, Tina Dekker, et al. "Photocurrent Imaging of Multi-Memristive Charge Density Wave Switching in Two-Dimensional 1T-TaS2." Nano Letters 20, no. 10 (2020): 7200–7206. http://dx.doi.org/10.1021/acs.nanolett.0c02537.

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Gawęda, Sylwia, Remigiusz Kowalik, Przemysław Kwolek, et al. "Nanoscale Digital Devices Based on the Photoelectrochemical Photocurrent Switching Effect: Preparation, Properties and Applications." Israel Journal of Chemistry 51, no. 1 (2011): 36–55. http://dx.doi.org/10.1002/ijch.201000057.

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Hino, Takami, Tsuyoshi Hasegawa, Hirofumi Tanaka, Tohru Tsuruoka, Takuji Ogawa, and Masakazu Aono. "Influence of Atmosphere on Photo-Assisted Atomic Switch Operations." Key Engineering Materials 596 (December 2013): 116–20. http://dx.doi.org/10.4028/www.scientific.net/kem.596.116.

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We conducted light irradiation experiments in air to clarify influence of atmosphere on the operation of a photo-assisted atomic switch. In air, Pt-Ag2S/Ag nanogap electrodes with a PTCDI thin layer in their nanogaps showed current fluctuations with an applied bias of from 1.5 V to 6 V regardless of the bias polarity and with or without light irradiation. This is in contrast to the fact that only two things cause an increase in current that result in the formation of a silver bridge and switching behavior under vacuum, namely, light irradiation and the application of positive bias to the Ag2S/Ag electrode [. In addition, photocurrent caused by irradiating a PTCDI thin layer was found to be sensitive to air and to N2. These results indicate that moisture or other gas molecules in air and in N2 have an influence on the photo-assisted atomic switching behavior.

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Chen, Li, Yu Chen, Lili Miao, Yiming Gao, and Junwei Di. "Photocurrent switching effect on BiVO4 electrodes and its application in development of photoelectrochemical glucose sensor." Journal of Solid State Electrochemistry 24, no. 2 (2019): 411–20. http://dx.doi.org/10.1007/s10008-019-04469-1.

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LUO, BINGWEI, YUAN DENG, YAO WANG, YONGMING SHI, LILI CAO, and WEI ZHU. "INDEPENDENT GROWTH OF LARGE SCALE CdS NANOROD ARRAYS ON DIFFERENT INTERFACES WITH EFFICIENT PHOTOELECTRICAL PERFORMANCE." Functional Materials Letters 06, no. 01 (2013): 1350005. http://dx.doi.org/10.1142/s1793604713500057.

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Large-scale CdS nanorod arrays have been prepared directly by a simple one-step and non-template magnetron sputtering method on different substrates. Parallel and uniform CdS nanorods with diameters ∼ 70 nm were self-assembled with (00l) orientation regardless of the substrate. The CdS nanorod arrays showed high open-circuit photovoltage, short-circuit photocurrent intensity and excellent photosensitivity properties with a switching "ON/OFF" ratio as high as 60. This study provides a simple strategy to grow CdS nanorod arrays without the constraints introduced by the substrate and opens a new potential for the application of CdS nanorod arrays in photodetectors and nanostructured solar energy conversion devices.

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