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Dissertations / Theses on the topic 'Photodetector'

Author: Grafiati

Published: 4 June 2021

Last updated: 25 July 2025

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1

DeCorby, Raymond George. "Optimization of metal-semiconductor-metal photodetectors and advanced photodetector structures." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1998. http://www.collectionscanada.ca/obj/s4/f2/dsk2/tape17/PQDD_0005/NQ29029.pdf.

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2

Zhang, Hezhi. "the research of optical and electrical properties on nanowire LED and photodetector." Thesis, Université Paris-Saclay (ComUE), 2016. http://www.theses.fr/2016SACLS096/document.

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Dans ce manuscrit, je présente mon travail dédié à la réalisation et à la caractérisation des émetteurs et détecteurs de lumière à base de nanofils de nitrures. Je détaille la fabrication des dispositifs utilisant des outils de nanofabrication à l’état de l’art, ainsi que l'étude de leurs propriétés électriques et optiques.Le premier chapitre résume brièvement les propriétés de base des semi-conducteurs nitrures et décrit les méthodes d’élaboration des nanofils. Dans le deuxième chapitre, je présente mon travail sur la fabrication et la caractérisation de LED à nanofil unique InGaN/GaN ayant u

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3

Jiang, Lin. "Investigation of a novel multicolor quantum well infrared photodetector and advanced quantum dot infrared photodetectors." [Gainesville, Fla.] : University of Florida, 2003. http://purl.fcla.edu/fcla/etd/UFE0001249.

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4

Arango, Alexi Cosmos 1975. "A quantum dot heterojunction photodetector." Thesis, Massachusetts Institute of Technology, 2005. http://hdl.handle.net/1721.1/27869.

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Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2005.<br>This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.<br>Includes bibliographical references (p. 113-119).<br>This thesis presents a new device architecture for photodetectors utilizing colloidally grown quantum dots as the principle photo-active component. We implement a thin film of cadmium selenide (CdSe) quantum dot sensitizers, sandwiched between an electron-transporting titanium di

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5

Bin, Nordin Mohammad Syahmi. "Dilute nitride based vertical cavity enhanced photodetector." Thesis, University of Essex, 2018. http://repository.essex.ac.uk/21722/.

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The research reported in this thesis is aimed at developing and demonstrating the performance of a p-i-n / vertical cavity enhanced (VCE) photodetector structure with different material compositions of dilute nitride. The tunable selectivity is taken into account during the development in order for the VCE photodetector to be able to perform as a tunable receiver. In the first part, the performance of p-i-n photodetectors with 10 and 20 quantum wells are presented. The 20 quantum well photodetector exhibits the highest ever reported quantum efficiency of 80% at -5V bias for applications at 1.0

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6

Opanasiuk, Anatolii Serhiiovych, Анатолий Сергеевич Опанасюк, Анатолій Сергійович Опанасюк, M. M. Ivashchenko, and O. A. Shevchenko. "Structural characteristics of CdSe films deposited dy a CSVS." Thesis, Вид-во СумДУ, 2009. http://essuir.sumdu.edu.ua/handle/123456789/4197.

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7

Kache, Sravanthi. "Optimization of charge collection efficiency in MSM photodetector." Diss., Columbia, Mo. : University of Missouri-Columbia, 2005. http://hdl.handle.net/10355/4279.

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Thesis (M.S.)--University of Missouri-Columbia, 2005.<br>The entire dissertation/thesis text is included in the research.pdf file; the official abstract appears in the short.pdf file (which also appears in the research.pdf); a non-technical general description, or public abstract, appears in the public.pdf file. Title from title screen of research.pdf file viewed on (December 12, 2006) Includes bibliographical references.

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8

Allen, Kenneth Wayne Jr. "Waveguide, photodetector, and imaging applications of microspherical photonics." Thesis, The University of North Carolina at Charlotte, 2015. http://pqdtopen.proquest.com/#viewpdf?dispub=3685782.

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<p> Dielectric microspheres with diameters (<i>D</i>) on the order of several wavelengths of light have attracted increasing attention from the photonics community due to their ability to produce extraordinarily tightly focused beams termed "photonic nanojets," to be used as microlenses for achieving optical super-resolution or to develop sensors based on whispering gallery mode resonances. In this dissertation, we study the optical properties of more complicated structures formed by multiple spheres which can be assembled as linear chains, clusters or arrays, integrated with waveguides or emb

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9

Živanović, Goran. "Design considerations for Ge-on-Si waveguide photodetector." Thesis, Massachusetts Institute of Technology, 2014. http://hdl.handle.net/1721.1/91083.

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Thesis: S.M., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2014.<br>45<br>Cataloged from PDF version of thesis.<br>Includes bibliographical references (pages 108-114).<br>In integrated photonic circuits photodetector is one of key components, modern applications require that photodetector has a high 3 dB bandwidth. The ultimate limit for the response time for conventional photodetectors (like vertically illuminated photodiode, Schotky photodiode, MSM photodetector etc.) is given by the transit time of the photogenerated electron-hole pairs,

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10

Meyer, Jason T., and Mahmoud Fallahi. "Ultra-compact integrated silicon photonics balanced coherent photodetector." SPIE-INT SOC OPTICAL ENGINEERING, 2016. http://hdl.handle.net/10150/621797.

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In this paper, the performance simulations of a novel ultra-compact balanced coherent photodetector for operation at a wavelength of 1.5 mu m are presented and design proposals for future fabrication processes are provided. It consists of a compact 2x2 MMI that is evanescently coupled into a germanium MSM photodetection layer. The simulations demonstrate dark current less than 10 nA, capacitance less than 20 fF, and optical bandwidth in the 10-30 GHz range. We propose utilizing the simplicity of direct wafer bonding to bond the detection layer to the output waveguides to avoid complicated epit

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11

Tam, Kai Cheong. "Study on selectivity and tunability of organic photodetector." HKBU Institutional Repository, 2013. http://repository.hkbu.edu.hk/etd_ra/1511.

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12

Tang, Liang. "Nanometre-scale germanium photodetector enhanced by optical antennas /." May be available electronically:, 2008. http://proquest.umi.com/login?COPT=REJTPTU1MTUmSU5UPTAmVkVSPTI=&clientId=12498.

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13

Herdlick, Bryan E. "Computer-controlled photodetector characterization system (design and construction)." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2002. http://library.nps.navy.mil/uhtbin/hyperion-image/02Dec%5FHerdlick.pdf.

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14

Yeo, Hwee Tiong. "High responsivity tunable step quantum well infrared photodetector." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2004. http://library.nps.navy.mil/uhtbin/hyperion/04Dec%5FYeo.pdf.

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15

WANG, YIMING. "Research on graphene/silicon Schottky junction based photodetector." Doctoral thesis, Politecnico di Torino, 2021. http://hdl.handle.net/11583/2950502.

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16

Akbari, Ali. "Waveguide integrated surface plasmon photodetector: Design, fabrication, and measurement." Thesis, University of Ottawa (Canada), 2010. http://hdl.handle.net/10393/28505.

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The thesis investigates the design, fabrication, and experimental demonstration of a photodetector integrated into a thin metal stripe waveguide of finite width, operating at optical infrared wavelengths. The metallic stripe, which is clad by lightly doped silicon at the bottom and air on the top, supports the propagation of bound optical modes having very high loss (&sim; 1dB/mum) and submicron field confinement in the axis perpendicular to the stripe width. The metal/silicon interface also has electrically rectifying characteristics, formally described as a Schottky diode. The theoretical mo

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17

Vieira, Manuel Augusto. "Three transducers for one photodetector: essays for optical communications." Doctoral thesis, Faculdade de Ciências e Tecnologia, 2012. http://hdl.handle.net/10362/8206.

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Dissertation presented to obtain the PhD degree in Electrical and Computer Engineering - Electronics<br>Optical processing devices based on a- SiC:H multilayer architectures are expected to become reconfigurable to perform WDM optoelectronic logic functions and provide as well complex photonic functions such as signal amplification and switching. This thesis, entitled ”Three Transducers for One Photodetector: essays for optical communications”, reports the main work areas to design, control, validate and evaluate the research of a voltage-controllable wavelength selective optical switching bas

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18

Al, Johani Ebrahim Dakhil. "NIR silicon photodetector enhancement using photonic crystal cavity resonators." Thesis, Massachusetts Institute of Technology, 2019. https://hdl.handle.net/1721.1/128418.

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Thesis: S.B., Massachusetts Institute of Technology, Department of Physics, 2019<br>Cataloged from PDF of thesis. "The Table of Contents does not accurately represent the page numbering"--Disclaimer page.<br>Includes bibliographical references (pages 45-47).<br>The growing demand for efficient infrared sensors for light ranging, thermal-cameras, and soon, free-space optical communications has yet to be answered. In this study, we use polycrystalline silicon in conjunction with a photonic crystal cavity (PhCC) to enhance light absorption for efficient sensing. We present a cost-effective altern

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19

Lantz, Kevin R. "Two color photodetector using an asymmetric quantum well structure." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2002. http://library.nps.navy.mil/uhtbin/hyperion-image/02Jun%5FLantz.pdf.

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20

"MWIR and Visible nBn Photodetectors and Their Monolithically-Integration for Two-Color Photodetector Applications." Doctoral diss., 2016. http://hdl.handle.net/2286/R.I.40752.

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abstract: This work demonstrates novel nBn photodetectors including mid-wave infrared (MWIR) nBn photodetectors based on InAs/InAsSb type-II superlattices (T2SLs) with charge as the output signal, and visible nBn photodetectors based on CdTe with current output. Furthermore, visible/MWIR two-color photodetectors (2CPDs) are fabricated through monolithic integration of the CdTe nBn photodetector and an InSb photodiode. The MWIR nBn photodetectors have a potential well for holes present in the barrier layer. At low voltages of < −0.2 V, which ensure low dark current <10-5 A/cm2 at 77 K, photog

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21

Zhang, YIWEI. "CHIRAL POLYMER PHOTODETECTOR." Thesis, 2014. http://hdl.handle.net/1974/8667.

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A polymer photodetector is fabricated using polythiophene with chiral alkyl side chains. The Cotton effect is observed in the CD spectrum of the photodetector, indicating an unequal absorbance of left- and right-handed circular polarized light (CPL). The photodetector is proven to be able to identify incident left- and right-handed CPL. Polymer photodetectors that are made from R- and S-limonene induced achiral polymers are fabricated. A “hot spin-coating” process is introduced to cast uniform limonene induced polymer films. As a result of chirality transfer, Cotton effects are also obser

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22

Wang, Yu Hsiung, and 王馭熊. "Porous Silicon Photodetector." Thesis, 1996. http://ndltd.ncl.edu.tw/handle/75992435761016291202.

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碩士<br>國立中山大學<br>電機工程研究所<br>84<br>A high sensitivity porous silicon (PS) photodetector is fabricated through rapid thermal oxidation (RTO) and ra- pid thermal annealing (RTA) processes. A RTO process is used to passivate the surface of PS and therefore to en- hance the photoresponsivity of the PS layer. A RTA proc- ess is employed to improve the quality of the oxide layer on the surface of PS layer and hence to reduce the dark current of the PS photodetector. Under our optimum prep- aration

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23

Yan, Chang Jun, and 張鈞硯. "GaN Photodetector Fabrication." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/94821981801865622822.

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碩士<br>國防大學理工學院<br>電子工程碩士班<br>101<br>The Characteristics of the metal-semiconductor-metal (MSM) photodetector with different epitaxial structure were mainly discussed in this paper. One is gradual-buffer MSM structure, the other is MSM with step buffer structure. Both two samples’ P/D ratio and responsibility were compard, and MSM with and without capping layer in step structure were also analyzed. For step buffer structure of fine epitaxial quality, a band discontinuity with obvious barrier height can lower dark current and promoted photocurrent/dark ratio. A Filter layer of Mg0.44Zn0.56O depo

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24

Chia-ming, Liu, and 劉家銘. "Study of Modulation-doped Photodetector." Thesis, 2000. http://ndltd.ncl.edu.tw/handle/07366541740991840849.

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碩士<br>國立清華大學<br>材料科學工程學系<br>88<br>Modulation-doped photodetector (MODPD) grown on GaAs substrate by molecular beam epitaxy (MBE) has been shown to exhibit an excellent responsitivity in the sub-bandgap range (0.9-1.3 m). The device is basically a conventional modulation doped field effect transistor (MODFET) structure with its channel region made of low-temperature (LT) MBE-grown GaAs. In this work, we report the performances of three MODPDs with different channel materials of LT GaAs, LT InGaAs, and Si-doped LT GaAs. The effect of width and separation of the interdigitated electrodes on t

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25

Kun-Jheng, Wu. "Superlattice Infrared Photodetector with Double Barriers." 2006. http://www.cetd.com.tw/ec/thesisdetail.aspx?etdun=U0001-2407200611344000.

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Wu, Kun-Jheng, and 吳坤政. "Superlattice Infrared Photodetector with Double Barriers." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/98695020831974367625.

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碩士<br>國立臺灣大學<br>電子工程學研究所<br>94<br>The superlattice structure has been used extensively in the infrared photodetectors. In this thesis, our purpose is to fabricate a superlattice infrared photodetector (SLIP) with high detectivity. First, we propose a novel structure for the superlattice infrared photodetector. The structure is composed of a 15-period superlattice sandwiched between two asymmetric blocking layers. By the simple fabrication process and the measurement setup, we can measure the electrical and optical properties of our devices. This structure shows asymmetric current-voltage chara

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27

Kuna-hua-Huang and 黃冠華. "InAs/GaAs Quantum Dot Infared Photodetector." Thesis, 2000. http://ndltd.ncl.edu.tw/handle/44710082594790804284.

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28

Hu, Ho-Cheng, and 胡合城. "Studies of Quantum Dot Infrared Photodetector." Thesis, 2001. http://ndltd.ncl.edu.tw/handle/61943101035285331011.

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碩士<br>國立交通大學<br>電子工程系<br>89<br>We have designed and fabricated self-assembled InAs-GaAs quantum dot infrared photodetectors which adjusts the dot’s density and impurity’s doping level and growths AlGaAs between quantum dots to decrease dark current. Compare to traditional InAs/GaAs QDIP, our new structure successfully decrease dark current by several order. The intersubband transition peak is observed at the wavelength of 6.5 and shows encouraging normal incident performance characteristic, with detectivity of at a bias of 0.8V and T = 77K . It also shows large responsivity and photocondu

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Huang, Chih-wei, and 黃致維. "Preliminary study on GaN-based photodetector." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/37459148595206533808.

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碩士<br>國立臺灣科技大學<br>電子工程系<br>102<br>In this paper, we used III-nitride material having absorption bands in ultraviolet to blue light to make photodetectors that can be further engineered to be ultraviolet or blue light sensors. PIN (p-intrinsic-n-type) photodetectors were fabricated using epitaxial wafers with GaN/InGaN multiple-quantum-well active layer, and characterized in terms of optical and electrical characteristics, responsivity and quantum efficiency. In the development of GaN PIN photodetectors, we used commercial GaN wafers and laboratory-made GaN wafers containing distributed Bragg r

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Tsai, Cheng-Hsuan, and 蔡承軒. "InAs/GaAs quantum dot infrared photodetector." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/80344603298725210425.

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碩士<br>國立清華大學<br>光電工程研究所<br>93<br>Five InAs/GaAs quantum dot infrared photodetector (QDIP) samples with different device structures are discussed in the thesis. The QDIP samples are grown on semi-insulating (100) GaAs substrate by Riber Epineat solid source molecular beam epitaxy (MBE). High dot density of 1 x 1011 cm-2 and short average distance between neighboring quantum dots of 7.4 nm are observed from the uniform quantum dot distribution atomic force microscopy (AFM) image. Three different energy levels are distinguished from the photoluminescence (PL) spectra. The phenomenon is attributed

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31

Yang, Yuag-Yi, and 楊原億. "Study of GaN MOS Ultraviolet Photodetector." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/50901973353175863922.

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碩士<br>大葉大學<br>電機工程學系碩士班<br>93<br>In this experimental process, we deposit oxide layer on GaN with liquid-phase deposition. And we change the ration of hydrofluosilicic (H2SiF6) solution and boric acid to analyze the mode on the surface of silicon dioxide with AFM. To investigate the chemical bonding with ESCA and the composition with EDS & AES of SiO2 makes sure the possible chemical elements. Compared the as-deposited and annealing in 800℃for 1hour among different deposited time. Annealing can harden silicon dioxide and decrease the leakage current of 2.7x10-2A/cm2 as-deposited to 7.77x10-3

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32

Lin, Tsung-Hsiao, and 林宗孝. "Near Infrared Crystal Germanium film Photodetector." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/25637550710516418917.

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碩士<br>國立中央大學<br>光電科學與工程學系<br>103<br>The particular metal-germanium-metal photodetector (PD) is investigated in this research. Germanium has good absorption coefficient in near infrared such as 850nm, 1310nm and 1550nm which are commonly used in optics communication. Unfortunately, the prohibitive cost of germanium wafer makes it difficult to popularize. Radio frequency (RF) sputtering system is used to deposit single crystal intrinsic germanium film to fabricate the photodetector. It not only keeps performance of Ge but also reduces the cost more than a factor of five. In this investigation, i

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33

Ho, Kang-Ting. "Photodetector Characteristics in Visible Light Communication." Thesis, 2016. http://hdl.handle.net/10754/609456.

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Typically, in the semiconductor industry pn heterojunctions have been used as either light-emitting diodes (LED) or photodiodes by applying forward current bias or reverse voltage bias, respectively. However, since both devices use the same structure, the light emitting and detecting properties could be combine in one single device, namely LED-based photodetector. Therefore, by integrating LED-based photodetectors as either transmitter or receiver, optical wireless communication could be easily implemented for bidirectional visible light communication networks at low-cost. Therefore, this diss

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Shi, Jin-Wei, and 許晉瑋. "Metal-Semiconductor-Metal Traveling Wave Photodetector." Thesis, 2002. http://ndltd.ncl.edu.tw/handle/90600035682741883670.

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博士<br>國立臺灣大學<br>光電工程學研究所<br>90<br>ABSTRACT Metal-Semiconductor-Metal Traveling-Wave Photodetectors by Jin-Wei Shi The maximum available power of photodetector decreases as electrical bandwidth increases, and Power-Bandwidth (PB) product is an important figure of merit in the performances of ultra-high speed photodetectors (PDs). PDs with high PB products afford the applications in fiber radio communication system, photoreceiver circuit without electrical amplifier, and the sub-millimeter wave signals generation. Traveling wave photodetect

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Chen, Wei-Ming, and 陳偉銘. "ZnS/ZnO nanobilayers based-UV photodetector." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/m3eed7.

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碩士<br>國立臺北科技大學<br>製造科技研究所<br>106<br>Recently, chemical, biological, gas and ultraviolet (UV) sensors with modern nanostructures have been widely fabricated and investigated due to their unique structural and optical properties. Moreover, zinc sulfide (ZnS) films are of great importance for applications in various optoelectronic devices. Compared with direct band gap semiconductor ZnO (~3.4 eV), ZnS has a higher band gap (3.7 eV in cubic zinc blende phase) as a UV detector in this specific wavelength region. In addition, ZnS with advantage of a diverse range of possible structures and morpholog

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CHIANG, PEI-SHAN, and 蔣佩珊. "Study single crystal CsPbBr3 perovskite photodetector." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/uw9msp.

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碩士<br>國立臺南大學<br>材料科學系碩士班<br>107<br>In recent years, perovskite materials have attracted more and more attention because they have good photoelectric properties and are inexpensive, and can be prepared at room temperature. In this study, electron beam lithography was used to implant electrostatic charges between electrodes to absorb DNA molecules. Nanoparticles and DNA were used as medium to adsorb perovskite (CsPbBr3) nanoparticles as crystal seed which then grew into a single crystal across the electrodes as a light sensor. Since the obstruction of the polycrystalline interface is avoided, th

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Kuo, Hsiu An, and 郭修安. "Si-doped Graphene for Schottky Photodetector." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/zt7p4x.

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碩士<br>國立臺灣科技大學<br>材料科學與工程系<br>104<br>This study can be separated into two major parts. Firstly, we synthesized silicon doped graphene (SiG) from polycarbosilane by chemical vapor deposition (CVD) and compared material properties with pristine graphene (PG) which was synthesized by CVD process too. Raman spectroscopy, TEM, XPS, and UV-Vis were employed to characterize the structure and properties of PG and SiG. Raman spectrum of SiG shows the stronger intensity of D-band and the appearance of a shoulder peak near G-band. This was obvious caused by defect that might be attributed to Si doping to

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Chieh-Chun, Chang. "Germanium Quantum Dots and Bulk Germanium Photodetector." 2006. http://www.cetd.com.tw/ec/thesisdetail.aspx?etdun=U0001-1407200617484700.

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39

Lee, Cheng-Jiun. "Metal Gate and Ge on Insulator Photodetector." 2005. http://www.cetd.com.tw/ec/thesisdetail.aspx?etdun=U0001-2107200515354200.

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Huang, Ting-Wen, and 黃庭文. "AlGaN/GaN heterojunction metal-semiconductor-metal photodetector." Thesis, 2002. http://ndltd.ncl.edu.tw/handle/42896892481323550856.

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碩士<br>國立中央大學<br>光電科學研究所<br>90<br>The Schottky type metal-semiconductor-metal (MSM) ultraviolet Photodetectors based on GaN/AlGaN heterostructure material systems are reported. The Schottky contacts were made with Au metal. The dark and illuminated current-voltage characteristics were studied.

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41

Huang, Yu-Chun, and 黃友俊. "Laterally Bridged ZnO Nanorod UV Photodetector Applications." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/b7b2k5.

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碩士<br>國立雲林科技大學<br>電子工程系<br>102<br>This study develops a density-controlled and seedless pressure growth method for laterally bridged ZnO nanorods from Au electrode for use in metal–semiconductor–metal photodetector fabrication. Firstly, directly grown laterlly ZnO nanorods on the Au electrode. Secondly, Using the different annealing time for Au electrode, the effect of pre-annealing process on suppressing vertical ZnO nanorods is systematically investigated by atomic force microscopy and scanning electron microscopy. The pre-annealing process is demonstrated to have direct influence on control

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42

Liu, Cheng-Yen, and 劉政諺. "CMOS Blue Photodetector Without Color Filter Film." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/22875822128608070401.

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碩士<br>國立清華大學<br>電子工程研究所<br>97<br>This thesis is realized in TSMC 0.35um 2P4M process. The original objective of this thesis concentrates on using two photodetectors. The first photodiode absorbs the longer wavelength, whereas the second photodiode absorbs the shorter wavelength component of the impinging light. These two output signals are logarithmically compressed and magnified to obtain the voltage difference. It can provide a color difference between the reference level signal. Under this process, the sensors have strong photoresponsivity to red light. At present, this system performs as a

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Chang, Chieh-Chun, and 張傑竣. "Germanium Quantum Dots and Bulk Germanium Photodetector." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/15465205611858709119.

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碩士<br>國立臺灣大學<br>光電工程學研究所<br>94<br>In this thesis, the novel MOS tunneling diodes with high leakage current were utilized as photodetectors. In order to increase the responsivity, boron delta-doping was used in the QDIPs and QWIPs. The infrared response was significantly enhanced due to the p-type delta-doping in Ge QDs/QWs or in Si spacers because of the increase of hole concentration. The two-color broadband absorption of MOS Ge/Si QDIPs were demonstrated using boron delta-doping in the Si spacers. The peak at 3.7-6 um is due to the intersubband transition in the Ge QD layers. The other peak

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Lee, Cheng-Jiun, and 李呈峻. "Metal Gate and Ge on Insulator Photodetector." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/72031596614397958716.

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碩士<br>國立臺灣大學<br>電子工程學研究所<br>93<br>In this thesis, the material properties of tantalum nitride (TaN) gate have been studied, such as proper work-function, thermal stability of the gate itself and also in contact with the dielectric underneath. Because the work function of a material depends on its crystalline structure, orientation, and composition. In our experiment, the work-function (Wm) variation and thermal stability of TaN are discussed as a function of nitrogen partial-flow rates and annealing temperature. The nitrogen partial-flow rates are increased in reactive sputtering, thus the the

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Chang, Chia-Yu, and 張嘉佑. "Polymer Near-Infrared Photodetector and its application." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/17691196302665307830.

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Hsu, Chi-Hsiu, and 許齊修. "P- doped Ge quantum dots infrared photodetector." Thesis, 2001. http://ndltd.ncl.edu.tw/handle/64446670494337617929.

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碩士<br>國立臺灣大學<br>電機工程學研究所<br>89<br>Ge quantum dot infrared photodetectors are predicted to have some advantages, such as exhibiting a lower dark current and increasing carrier capture and relaxation time, over conventional quantum infrared photodetectors. While most quantum well infrared photodetectors only weakly response normal incident light, the photoresponse of a Ge QDIP is expected to be sensitive to the normal incident light. In addition, because Ge dots can be grown on a Silicon substrate, Ge QDIPs also provide us a way of the monolithic integration between the detectors and the readou

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WU, CHE-JUNG, and 吳哲榕. "Large-area and solution-processed graphene photodetector." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/26880712120981117417.

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碩士<br>中原大學<br>電子工程研究所<br>103<br>Graphene is considered to be a promising candidate for next-generation optoelectronic devices due to its unique electrical and optical properties, such as high transparency and broadband absorbance in the visible to near-infrared spectral regime. Therefore, there have been attracted much attention on the studies of the photo-response of graphene-metal interface and development of graphene-based photo-detectors. However, these devices are usually fabricated by expensive lithography or e-beam processes. In the work, a practical method to fabricate graphene photo-d

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Chun, Wei Fan, and 范君威. "The study of ZnO/PVK/NiO photodetector." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/6wn8d3.

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碩士<br>國立嘉義大學<br>電子物理學系光電暨固態電子研究所<br>106<br>In this thesis, the NiO thin film was deposited on p-Si substrate by radio-frequency sputtering system, and then the PVK and ZnO were coated, consecutively, on the NiO using spin-coating. The pin (p-NiO/PVK/n-ZnO) and pn (p-NiO/n-ZnO) photodiodes (PDs) were fabricated to study the effects of PVK on the PDs. We found that the PDs with PVK exhibited better rectifying characteristics than the one without PVK. The rectification ratio was 59 at ±5V bias voltage for the PDs with PVK, however the rectification ratio was only 3.81 for the PDs without PVK. The

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Tsai, Hong-Mau, and 蔡宏懋. "InGaAs PIN photodetector fabrication and electronics measurement." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/68676756286252261225.

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碩士<br>國防大學中正理工學院<br>電子工程研究所<br>96<br>In the thesis, we mainly focus on experiment, fabrication and device characteristic analysis of PIN photodetector. We use MOCVD to grow of InGaAs/InP epitaxial layers. It will be diffusion of Zn after bottle into Quartz tube. It will cause P-type and N-type region.We will part from chip and measure of material characteristic, and make PIN device of electronics measurement. To understand that PIN photodetector the characteristic of the analyses and experimental. For material characteristic, we use Hall measurement and secondary ion mass spectroscopy to measu

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Jhang, Jyun-jie, and 張竣傑. "Study of Zinc Oxide Nanotip Ultraviolet Photodetector." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/89012326216262430812.

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碩士<br>國立中山大學<br>電機工程學系研究所<br>98<br>In this study, we prepare the zinc oxide nanotip with aqueous solution on Al doped ZnO/glass substrate. In excess of 6 hours growth, the film-liked layer is obtained in the bottom of ZnO nanotip. In order to study the photoresponse of maximum ZnO nanotip length without film-like layer, we choose 6 hours as the growth time of ZnO nanotip, which the height is almost the same of about 4 μm. For the fabrication of ZnO nanotip UV photodetector, In-Zn was use as anode and cathode electrodes in digitate type on the top of ZnO nanotip array. The photoresponse which u

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