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Journal articles on the topic 'Photodetector'

Author: Grafiati
Published: 4 June 2021
Last updated: 25 July 2025

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1

Xie, Haowei, Chenxu Kang, Muhammad Ahsan Iqbal, et al. "Ferroelectric Tuning of ZnO Ultraviolet Photodetectors." Nanomaterials 12, no. 19 (2022): 3358. http://dx.doi.org/10.3390/nano12193358.

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The ferroelectric field effect transistor (Fe-FET) is considered to be one of the most important low-power and high-performance devices. It is promising to combine a ferroelectric field effect with a photodetector to improve the photodetection performance. This study proposes a strategy for ZnO ultraviolet (UV) photodetectors regulated by a ferroelectric gate. The ZnO nanowire (NW) UV photodetector was tuned by a 2D CuInP2S6 (CIPS) ferroelectric gate, which decreased the dark current and enhanced the responsivity and detectivity to 2.40 × 104 A/W and 7.17 × 1011 Jones, respectively. This strat
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2

Yan, Xu, Xueqiang Ji, Jinjin Wang, et al. "Improve photo-to-dark current ratio of p-Si/SiO2/n-Ga2O3 heterojunction solar-blind photodetector by inserting SiO2 barrier layer." Journal of Vacuum Science & Technology B 40, no. 5 (2022): 052207. http://dx.doi.org/10.1116/5.0107495.

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In this study, the solar-blind ultraviolet photodetectors based on p-Si/Ga2O3 and p-Si/SiO2/n-Ga2O3 heterojunctions were fabricated by metalorganic chemical vapor deposition, respectively. Benefitting from the electron-blocking ability of SiO2 dielectric layer insertion, p-Si/SiO2/n-Ga2O3 photodetectors exhibit a very low dark current of 1.14 × 10−12 A, which is 4 orders of magnitude lower than p-Si/Ga2O3 photodetectors (3.22 × 10−8 A). At the same time, a high photo-to-dark current ratio (1.81 × 105) of p-Si/SiO2/n-Ga2O3 photodetectors was obtained under UV light (λ = 254 nm) at −15 V. Meanwh
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3

Kaawash, N. M. S., D. I. Halge, V. N. Narwade, J. W. Dadge та K. A. Bogle. "Fabrication of Near Ultraviolet Photodetector using α-Fe2O3 Thin FilmSynthesized via Spray Coating Technique". Journal of Physics: Conference Series 2426, № 1 (2023): 012011. http://dx.doi.org/10.1088/1742-6596/2426/1/012011.

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Abstract A UV photodetector was created using a spray-deposited α-Fe2O3 thin film on a glass substrate at 160 °C. The film’s thickness was approximately 110 nm. With a near UV light at a wavelength of 340 nm and an intensity of 140 µW/cm2, the photosensitivity of an individual α-Fe2O3 thin film photodetector was greater than 40%. An individual α-Fe2O3 thin film-based photodetector’s rapid photoresponse time of 1.6 ms and responsivity of ~ 1 mA/W can be attributed to the band gap and chemisorption of oxygen on the film’s surface. The photodetectors’ simple, low-cost, and large-scale fabrication
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4

Masoudian Saadabad, Reza, Christian Pauly, Norbert Herschbach, Dragomir N. Neshev, Haroldo T. Hattori, and Andrey E. Miroshnichenko. "Highly Efficient Near-Infrared Detector Based on Optically Resonant Dielectric Nanodisks." Nanomaterials 11, no. 2 (2021): 428. http://dx.doi.org/10.3390/nano11020428.

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Fast detection of near-infrared (NIR) photons with high responsivity remains a challenge for photodetectors. Germanium (Ge) photodetectors are widely used for near-infrared wavelengths but suffer from a trade-off between the speed of photodetection and quantum efficiency (or responsivity). To realize a high-speed detector with high quantum efficiency, a small-sized photodetector efficiently absorbing light is required. In this paper, we suggest a realization of a dielectric metasurface made of an array of subwavelength germanium PIN photodetectors. Due to the subwavelength size of each pixel,
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5

Fan, Ming-Ming, Kang-Li Xu, Ling Cao та Xiu-Yan Li. "Fast-speed self-powered PEDOT:PSS/α-Ga2O3 nanorod array/FTO photodetector with solar-blind UV/visible dual-band photodetection". Chinese Physics B 31, № 4 (2022): 048501. http://dx.doi.org/10.1088/1674-1056/ac3814.

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The α-Ga2O3 nanorod array is grown on FTO by hydrothermal and annealing processes. And a self-powered PEDOT:PSS/α-Ga2O3 nanorod array/FTO (PGF) photodetector has been demonstrated by spin coating PEDOT:PSS on the α-Ga2O3 nanorod array. Successfully, the PGF photodetector shows solar-blind UV/visible dual-band photodetection. Our device possesses comparable solar-blind UV responsivity (0.18 mA/W at 235 nm) and much faster response speed (0.102 s) than most of the reported self-powered α-Ga2O3 nanorod array solar-blind UV photodetectors. And it presents the featured and distinguished visible ban
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6

Zhu, Xinfa, Weishuai Duan, Xiancheng Meng, et al. "Visible-to-near-infrared photodetectors based on SnS/SnSe2 and SnSe/SnSe2 p−n heterostructures with a fast response speed and high normalized detectivity." Journal of Semiconductors 45, no. 3 (2024): 032703. http://dx.doi.org/10.1088/1674-4926/45/3/032703.

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Abstract The emergent two-dimensional (2D) material, tin diselenide (SnSe2), has garnered significant consideration for its potential in image capturing systems, optical communication, and optoelectronic memory. Nevertheless, SnSe2-based photodetection faces obstacles, including slow response speed and low normalized detectivity. In this work, photodetectors based on SnS/SnSe2 and SnSe/SnSe2 p−n heterostructures have been implemented through a polydimethylsiloxane (PDMS)−assisted transfer method. These photodetectors demonstrate broad-spectrum photoresponse within the 405 to 850 nm wavelength
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7

Wu, Chao, Huaile He, Haizheng Hu, et al. "Self-healing wearable self-powered deep ultraviolet photodetectors based on Ga2O3." Journal of Semiconductors 44, no. 7 (2023): 072807. http://dx.doi.org/10.1088/1674-4926/44/7/072807.

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Abstract Gallium oxide (Ga2O3) based flexible heterojunction type deep ultraviolet (UV) photodetectors show excellent solar-blind photoelectric performance, even when not powered, which makes them ideal for use in intelligent wearable devices. However, traditional flexible photodetectors are prone to damage during use due to poor toughness, which reduces the service life of these devices. Self-healing hydrogels have been demonstrated to have the ability to repair damage and their combination with Ga2O3 could potentially improve the lifetime of the flexible photodetectors while maintaining thei
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8

Leonard, Francois. "(Invited) Novel Designs for Single Photon Detection." ECS Meeting Abstracts MA2022-01, no. 9 (2022): 753. http://dx.doi.org/10.1149/ma2022-019753mtgabs.

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Photodetection plays a key role in basic science and technology, with exquisite performance having been achieved down to the single photon level. Further improvements in photodetectors would open new possibilities across a broad range of scientific disciplines, and enable new types of applications. However, it is still unclear what is possible in terms of ultimate performance, and what properties are needed for a photodetector to achieve such performance. In this presentation, I will discuss recent theoretical and experimental work to address this question. On the theoretical front, we present
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9

Talib, Mohammad, Nishant Tripathi, Samrah Manzoor, et al. "TiS3 Nanoribbons: A Novel Material for Ultra-Sensitive Photodetection across Extreme Temperature Ranges." Sensors 23, no. 10 (2023): 4948. http://dx.doi.org/10.3390/s23104948.

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Photodetectors that can operate over a wide range of temperatures, from cryogenic to elevated temperatures, are crucial for a variety of modern scientific fields, including aerospace, high-energy science, and astro-particle science. In this study, we investigate the temperature-dependent photodetection properties of titanium trisulfide (TiS3)- in order to develop high-performance photodetectors that can operate across a wide range of temperatures (77 K–543 K). We fabricate a solid-state photodetector using the dielectrophoresis technique, which demonstrates a quick response (response/recovery
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10

Zhou, Guigang, Huancheng Zhao, Xiangyang Li, et al. "Highly-Responsive Broadband Photodetector Based on Graphene-PTAA-SnS2 Hybrid." Nanomaterials 12, no. 3 (2022): 475. http://dx.doi.org/10.3390/nano12030475.

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The development of wearable systems stimulate the exploration of flexible broadband photodetectors with high responsivity and stability. In this paper, we propose a facile liquid-exfoliating method to prepare SnS2 nanosheets with high-quality crystalline structure and optoelectronic properties. A flexible photodetector is fabricated using the SnS2 nanosheets with graphene-poly[bis(4-phenyl) (2,4,6-trimethylphenyl) amine (PTAA) hybrid structure. The liquid-exfoliated SnS2 nanosheets enable the photodetection from ultraviolet to near infrared with high responsivity and detectivity. The flexible
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11

Hassan, Ali, Muhammad Azam, Yeong Hwan Ahn, Muhammad Zubair, Yu Cao, and Abbas Ahmad Khan. "Low Dark Current and Performance Enhanced Perovskite Photodetector by Graphene Oxide as an Interfacial Layer." Nanomaterials 12, no. 2 (2022): 190. http://dx.doi.org/10.3390/nano12020190.

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Organic-inorganic hybrid perovskite photodetectors are gaining much interest recently for their high performance in photodetection, due to excellent light absorption, low cost, and ease of fabrication. Lower defect density and large grain size are always favorable for efficient and stable devices. Herein, we applied the interface engineering technique for hybrid trilayer (TiO2/graphene oxide/perovskite) photodetector to attain better crystallinity and defect passivation. The graphene oxide (GO) sandwich layer has been introduced in the perovskite photodetector for improved crystallization, bet
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12

Zhang, Xiang Yu, Dongbo Wang, Zhi Zeng, et al. "PVP-Assisted Hydrothermal Synthesis of Bi2O2Se Nanosheets for Self-Powered Photodetector." Journal of Solar Energy Research Updates 9 (February 28, 2022): 1–8. http://dx.doi.org/10.31875/2410-2199.2022.09.01.

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Abstract: Bi2O2Se nanosheets were successfully synthesized via a facile one-step PVP-assisted hydrothermal process for the first time. Corresponding characterizations, such as XRD, XPS, SEM and TEM, were carried out to investigate the formation of the products on the amount of PVP in the reaction system. Results revealed that the single-crystalline Bi2O2Se nanosheets with small mean lateral size of 176.3 nm were obtained when the amount of PVP is 0.75 g. Single-crystalline Bi2O2Se nanosheets self-powered photodetector exhibited excellent photodetection performance, superior to that of self-pow
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13

Wen, Zheng, Guanlin Ke, Fangzhou Yi, and Zhenhua Sun. "The Surface ligands of PbSe Colloidal Quantum Dots Towards the High-Performing Infrared Photodetection." Journal of Physics: Conference Series 2524, no. 1 (2023): 012010. http://dx.doi.org/10.1088/1742-6596/2524/1/012010.

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Abstract Lead selenide colloidal quantum dots (PbSe CQDs) have the characteristics of an adjustable band gap, low cost, and easy processing. It is one of the ideal materials for developing infrared photodetectors and has broad application prospects in optical fiber communication, biomedical imaging, national defense, and other fields. Indium gallium zinc oxide (IGZO) is an n-type semiconductor material with high mobility. In this paper, an infrared photodetector with IGZO-PbSe CQDs heterojunction is fabricated, with the PbSe CQDs capped by MPA, TBAI, or EDT. The photodetection performance of t
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14

Yan, Yong, Jie Li, Hengyi Li, et al. "Unipolar barriers in near-broken-gap heterostructures for high-performance self-powered photodetectors." Applied Physics Letters 122, no. 4 (2023): 043505. http://dx.doi.org/10.1063/5.0133326.

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The two-dimensional heterostructure is a promising research direction in photodetection. However, developing a good photodetector with high responsivity and fast speed is still challenging. Herein, we fabricate a high-performance self-powered broadband (355–1064 nm) photodetector based on a near-broken-gap GeSe/SnS2/InSe heterostructure, where SnS2 is used as a potential hole barrier layer. The device shows an ultrahigh open-circuit voltage (VOC) of 0.57 V, a high power-dependent responsivity of 1.87 A W−1 at 355 nm, and a fast response time of 8 μs in the self-powered mode. Based on the near-
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15

Li, Chunlong, Jie Li, Zhengping Li, Huayong Zhang, Yangyang Dang, and Fangong Kong. "High-Performance Photodetectors Based on Nanostructured Perovskites." Nanomaterials 11, no. 4 (2021): 1038. http://dx.doi.org/10.3390/nano11041038.

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In recent years, high-performance photodetectors have attracted wide attention because of their important applications including imaging, spectroscopy, fiber-optic communications, remote control, chemical/biological sensing and so on. Nanostructured perovskites are extremely suitable for detective applications with their long carrier lifetime, high carrier mobility, facile synthesis, and beneficial to device miniaturization. Because the structure of the device and the dimension of nanostructured perovskite have a profound impact on the performance of photodetector, we divide nanostructured per
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16

Lu, Yueheng, Xiao Sun, Huabin Zhou, et al. "A high-performance and broadband two-dimensional perovskite-based photodetector via van der Waals integration." Applied Physics Letters 121, no. 16 (2022): 161104. http://dx.doi.org/10.1063/5.0116505.

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Van der Waals (vdW) integration of two-dimensional (2D) nanosheets provides the possibility to design optoelectronic devices with extended functionality in a controllable manner. Here, by leveraging the appropriate energy band alignment and the high-efficiency charge transfer at the junction, we construct the MoS2/graphene/2D-perovskite vdW heterostructure, which realizes the highly sensitive and broadband photodetection. Particularly, at the near-infrared (NIR) wavelength (λ = 1550 nm), the heterostructure photodetector shows a balanced trade-off between the high responsivity (>3000 A/W) a
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17

Anabestani, Hossein, Seyedfakhreddin Nabavi, and Sharmistha Bhadra. "Advances in Flexible Organic Photodetectors: Materials and Applications." Nanomaterials 12, no. 21 (2022): 3775. http://dx.doi.org/10.3390/nano12213775.

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Future electronics will need to be mechanically flexible and stretchable in order to enable the development of lightweight and conformal applications. In contrast, photodetectors, an integral component of electronic devices, remain rigid, which prevents their integration into everyday life applications. In recent years, significant efforts have been made to overcome the limitations of conventional rigid photodetectors, particularly their low mechanical deformability. One of the most promising routes toward facilitating the fabrication of flexible photodetectors is to replace conventional optoe
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18

Fan, Zelong, Zuoyan Qin, Lei Jin, et al. "Aluminum nitride crystal-based photodetector with bias polarity-dependent spectral selectivity." Journal of Vacuum Science & Technology A 41, no. 1 (2023): 013204. http://dx.doi.org/10.1116/5.0133162.

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Visible-blind ultraviolet-selective photodetection and ultraviolet-visible broad spectral photodetection are two essential functions eagerly pursued in each application area. However, they usually cannot be realized simultaneously in a bare photodetector because their different underlying photoexcitation processes would interfere with each other. In this work, a photodetector integrating the two distinct photodetector characteristics is presented. The device is prepared based on the heterojunction of a large-scale aluminum nitride bulk crystal and monolayer graphene. The visible-blind ultravio
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19

Khurelbaatar, Zagarzusem, and Chel Jong Choi. "Graphene/Ge Schottky Junction Based IR Photodetectors." Solid State Phenomena 271 (January 2018): 133–37. http://dx.doi.org/10.4028/www.scientific.net/ssp.271.133.

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Ge p-i-n photodetectors with and without graphene on active area fabricated and investigated the graphene effects on opto-electrical properties of photodetectors. The photodetectors were characterized with respect to their dark, photocurrents and responsivities in the wavelength range between 1530-1630 nm. For a 250 um-diameter device at room temperature, it was found that dark current of p-i-n photodetector with graphene were reduced significantly compared with photodetector without graphene. This improvement is attributed to the passivation of the graphene layers that leads to the efficient
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20

Li, Xiangyang, Shuangchen Ruan, and Haiou Zhu. "SnS Nanoflakes/Graphene Hybrid: Towards Broadband Spectral Response and Fast Photoresponse." Nanomaterials 12, no. 16 (2022): 2777. http://dx.doi.org/10.3390/nano12162777.

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High responsivity has been recently achieved in a graphene-based hybrid photogating mechanism photodetector using two-dimensional (2D) semiconductor nanosheets or quantum dots (QDs) sensitizers. However, there is a major challenge of obtaining photodetectors of fast photoresponse time and broad spectral photoresponse at room temperature due to the high trap density generated at the interface of nanostructure/graphene or the large band gap of QDs. The van der Waals interfacial coupling in small bandgap 2D/graphene heterostructures has enabled broadband photodetection. However, most of the photo
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21

Grahn, Holger T. "Nonpolar-Oriented GaN Films for Polarization-Sensitive and Narrow-Band Photodetectors." MRS Bulletin 34, no. 5 (2009): 341–47. http://dx.doi.org/10.1557/mrs2009.97.

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AbstractThis article reviews the optical polarization properties of unstrained and strained GaN films with a nonpolar orientation. In unstrained a -plane GaN films, the A exciton becomes completely linearly polarized perpendicular to the c-axis, whereas the B and C excitons are only partially polarized. In m -plane or a -plane GaN films under anisotropic in-plane compressive strain, all three interband transitions between the three uppermost valence bands and the conduction band can become linearly polarized for sufficiently large strain values. The complete linear polarization can be directly
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22

Liu, Shuo, Liang Zhang, and Xiaozhi Wang. "High-Performance 1D CdS/2D Te Heterojunction Photodetector." Journal of Physics: Conference Series 2809, no. 1 (2024): 012034. http://dx.doi.org/10.1088/1742-6596/2809/1/012034.

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Abstract Van der Waals heterostructures facilitate the versatile combination of two-dimensional (2D) materials with semiconductors that possess distinctive band structures, offering a promising platform for developing photodetectors with extensive spectral range and high sensitivity. This study showcases the flawless integration of one-dimensional (1D) CdS nanowires with 2D Te nanosheets, resulting in the creation of a high-performance, mixed-dimensional heterojunction photodetector. Bandgap engineering at the CdS/Te interface promotes Type II band alignment, markedly improving the separation
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23

Fang, Feier, Henan Li, Huizhen Yao, et al. "Two-Dimensional Hybrid Composites of SnS2 Nanosheets Array Film with Graphene for Enhanced Photoelectric Performance." Nanomaterials 9, no. 8 (2019): 1122. http://dx.doi.org/10.3390/nano9081122.

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Two-dimensional (2D) metal dichalcogenides have attracted considerable attention for use in photoelectric devices due to their unique layer structure and strong light-matter interaction. In this paper, vertically grown SnS2 nanosheets array film was synthesized by a facile chemical bath deposition (CBD). The effects of deposition time and annealing temperature on the quality of SnS2 films was investigated in detail. By optimizing the preparation conditions, the SnS2 array film exhibited efficient photoelectric detection performance under sunlight. Furthermore, in order to improve the performan
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24

Huang, Lanqing, Hanglin Lu, Xingpeng Liu, et al. "Self-catalyzed Growth and Optoelectronic Properties of High-Quality CsPbBr3 and CsPbI3 Nanowires Based on Chemical Vapor Deposition." Journal of Physics: Conference Series 2809, no. 1 (2024): 012037. http://dx.doi.org/10.1088/1742-6596/2809/1/012037.

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Abstract In this work, high-quality CsPbBr3 and CsPbI3 nanowires were successfully grown on Si substrates via a vapor-liquid-solid (VLS) self-catalyzed growth mechanism using chemical vapor deposition (CVD). The nanowires were characterized by various techniques, including Scanning Electron Microscopy (SEM), Photoluminescence (PL), and Raman spectroscopy. The results demonstrate that the perovskite nanowires grown under the VLS mechanism exhibit strong photoluminescence intensity and excellent crystalline quality. Based on these high-quality nanowires, we further fabricated single-nanowire pho
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He, Junjie, Chenyang Tao, Yanan Zhang та ін. "The Influence of Electrolytes on the Performance of Self-Powered Photoelectrochemical Photodetector Based on α-Ga2O3 Nanorods". Materials 17, № 15 (2024): 3665. http://dx.doi.org/10.3390/ma17153665.

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Photodetectors have a wide range of applications across various fields. Self-powered photodetectors that do not require external energy have garnered significant attention. The photoelectrochemical type of photodetector is a self-powered device that is both simple to fabricate and offers high performance. However, developing photoelectrochemical photodetectors with superior quality and performance remains a significant challenge. The electrolyte, which is a key component in these detectors, must maintain extensive contact with the semiconductor without degrading its material quality and effici
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26

Yang, Jiawei, Yudong Liu, Haina Ci, et al. "High-Performance 3D Vertically Oriented Graphene Photodetector Using a Floating Indium Tin Oxide Channel." Sensors 22, no. 3 (2022): 959. http://dx.doi.org/10.3390/s22030959.

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Vertically oriented graphene (VG), owing to its sharp edges, non-stacking morphology, and high surface-to-volume ratio structure, is promising as a consummate material for the application of photoelectric detection. However, owing to high defect and fast photocarrier recombination, VG-absorption-based detectors inherently suffer from poor responsivity, severely limiting their viability for light detection. Herein, we report a high-performance photodetector based on a VG/indium tin oxide (ITO) composite structure, where the VG layer serves as the light absorption layer while ITO works as the ca
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Miwa, Kaito, Hiroki Ebihara, Xu Fang, and Wakana Kubo. "Photo-Thermoelectric Conversion of Plasmonic Nanohole Array." Applied Sciences 10, no. 8 (2020): 2681. http://dx.doi.org/10.3390/app10082681.

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Plasmonic photo-thermoelectric conversion offers an alternative photodetection mechanism that is not restricted by semiconductor bandgaps. Here, we report a plasmonic photodetector consisting of an ultra-thin silver film with nanohole array, whose photodetection mechanism is based on thermoelectric conversion triggered by plasmonic local heating. The detector exhibits a maximum photocurrent at the wavelength of the surface plasmon polaritons, determined by the periodicity of the nanoholes. Hence, the response wavelength of the detector can be controlled via the morphological parameters of the
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Zhang, Yan, Luyi Huang, Jie Li, et al. "Two-dimensional Ta2NiSe5/GaSe van der Waals heterojunction for ultrasensitive visible and near-infrared dual-band photodetector." Applied Physics Letters 120, no. 26 (2022): 261101. http://dx.doi.org/10.1063/5.0093745.

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Dual-band photodetectors have attracted intensive attention because of the requirement of multiband information [such as visible (VIS) and near-infrared (NIR)] in multicolor imaging technology, in which additional information beyond human vision could assist object identification and navigations. The use of 2D materials can break the limitation of high cost of conventional epitaxial semiconductors and a complex cryogenic cooling system for multi-band detection, but there is still much room to improve the performance, especially in responsivity and signal noise ratio. Herein, we have fabricated
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Hui, Yifan, Yuxin Ren, Jiaming Song, Peng Hu, Haibo FAN, and Feng Teng. "Preparation of flexible ultraviolet photodetectors based on ZnO film by using a dip-coating method on different flexible substrates." Journal of Physics D: Applied Physics, May 20, 2022. http://dx.doi.org/10.1088/1361-6463/ac71e6.

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Abstract Flexible ultraviolet photodetectors have attached considerable attention owing to their significant potential for application in wearable electronic devices. In this study, flexible ultraviolet photodetectors based on ZnO films were prepared on different flexible substrates by using a simple dip-coating method. The photodetection properties of the photodetectors were evaluated and analyzed in detail. The results showed that the photodetector using filter paper as a substrate exhibits higher flexibility and stability than the photodetectors constructed on polyethylene terephthalate and
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Chen, Tong, Zhaoqiang Zheng, Kunle Li, et al. "Infrared Photodetectors Based on Wide Bandgap Two-dimensional Transition Metal Dichalcogenides via Efficient Two-photon Absorption." Nanotechnology, July 29, 2024. http://dx.doi.org/10.1088/1361-6528/ad6872.

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Abstract Two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted considerable attention due to their outstanding optoelectronic properties and ease of integration, making them ideal candidates for high-performance photodetectors. However, the excessive width of the bandgap in some 2D TMDs presents a challenge for achieving infrared photodetection. One approach to broaden the photoresponse wavelength range of TMDs is through the utilization of two-photon absorption (TPA) process. Unfortunately, the inefficiency of TPA hinders its application in infrared photodetection. In th
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Zhang, He, Daogen Hui, Xiang Hu, Jiabao Song, Mengyang Zhou, and Niumiao Zhang. "Self‐Powered Photodetector Based on ZnO Thin Film and CsPbBr3 Microparticles Heterojunction with High Switching Ratio and Fast Response." physica status solidi (RRL) – Rapid Research Letters, July 9, 2025. https://doi.org/10.1002/pssr.202500217.

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ZnO and CsPbBr3 (CPB) heterojunctions are widely used in photodetectors for their advantages of promoting directional electron transport and high quantum yield. However, there have been few studies on the self‐powered photodetectors based on the ZnO/CPB heterojunction, and the self‐powered feature is of great significance in photodetection applications. In this work, a self‐powered, high switching ratio, and fast response ZnO/CPB heterojunction photodetector is successfully constructed by the liquid phase method and the two‐step spin‐coating method. The crystal structure and surface morphology
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Wei, Binbin, Bingqian Zou, Jinxin Liu, et al. "Polarization‐Sensitive Photodetector Based on Quasi‐1D (TaSe4)2I Nanowire Response to 10.6 µm." Advanced Functional Materials, March 21, 2024. http://dx.doi.org/10.1002/adfm.202315194.

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AbstractPolarization‐sensitive infrared (IR) photodetection plays an important role in fiber optic communication, environmental monitoring, and remote sensing imaging. Semiconductors with quasi‐1D crystal structures exhibit unique optical and electrical properties due to their 1D carrier transport channels and large surface area‐to‐volume ratio, offering the possibility of high‐performance photodetectors with high photogain (G), polarization sensitivity photodetection. Herein, an ultra‐broadband photodetection (405 nm–10.6 µm) based on a quasi‐1D (TaSe4)2I single‐crystal nanowire is reported.
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Jia, Chen, Hongli Liu, Xiaoyuan Zhang, Shirong Wang, and Xianggao Li. "High performance Au/CH3NH3PbI3/Cu planar-type self-powered photodetector." Journal of Materials Chemistry C, 2022. http://dx.doi.org/10.1039/d2tc02477b.

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Self-powered photodetector deserves the great potential candidate in the next generation of low energy-consumption photoelectric devices. However, planar-type metal-semiconductor-metal (MSM) self-powered photodetectors (PDs) of perovskite still suffered poor photodetection performance....
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34

Ameer, Muhammad Faizan, Muzamil Hussain, Kashif Abbas, Muhammad Sufyan, Sami Ullah Khan, and Lioua Kolsi. "Graphene and post-transition metal sulfide-based photodetectors for enhanced visible light photodetection: A review." Physica Scripta, December 30, 2024. https://doi.org/10.1088/1402-4896/ada3f7.

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Abstract Integrating graphene and post-transition metal sulfides (PTMSs) enables enhanced photodetection in the visible spectrum regime, offering a remarkable strategy for next-generation photodetectors. This review summarizes the various characteristics of graphene/PTMSs-based photodetectors. The multiple aspects of photodetectors such as photodetection mechanism, performance parameters, and strategies for enhancing the properties of graphene-based photodetectors are briefly discussed. The photodetector characteristics of PTMSs and their suitability for integrating with graphene-based structu
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35

Yadav, Priyanka, John Wellington John, and Ashok Kumar Ganguli. "Large‐Scale Solution‐Processed Ultrathin 2D Tri‐layer Heterostructures for Photodetector Applications." ChemistrySelect 9, no. 10 (2024). http://dx.doi.org/10.1002/slct.202304811.

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AbstractHeterojunction‐based photodetectors of 2D TMDs provide the solution‐processability and scalability to fabricate devices. In this study, we have produced photodetectors using a solution‐processable approach, focusing on the heterojunction of 2D transition metal dichalcogenides (TMDs). The photodetection properties of the fabricated devices have been thoroughly examined at two different wavelengths 660 nm and 785 nm. This hybrid 2D tri‐layer heterojunction strategy, employing a MoS2/MoSe2 heterojunction as the photosensitizer and a TiS2 layer as the conducting pathway, is fabricated to u
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36

Scarel, G., O. Kokhan, and V. D. Wheeler. "Performance evaluation of atomic layer deposited TiO2/TiN nanolaminates used as infrared photodetectors." Journal of Vacuum Science & Technology B 42, no. 2 (2024). http://dx.doi.org/10.1116/6.0003139.

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We study the interaction with photodetectors of near infrared (NIR) laser light with power P in the range of mW and period τ = 3.55 fs (wavelength λ = 1064 nm, frequency ν = 0.28 PHz). We fabricate the photodetectors by depositing different sequences of thin TiO2/TiN nano-laminates onto glass substrates using atomic layer deposition (ALD). To evaluate the photodetector's performance, we assume Pτ to be the energy transferred to them from NIR laser light, allowing us to extract the photodetector's inductance L at zero bias voltage, and to explicitly link P to the photocurrent ΔI, or photovoltag
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37

Lv, Xiurui, Guipeng Liu, Guijuan Zhao, Linsheng Liu та Jianhong Yang. " α -In2Se3-based heterojunction photodetector using Nb-doped MoS2". Applied Physics Letters 123, № 26 (2023). http://dx.doi.org/10.1063/5.0176800.

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The built-in electric field at the heterojunction interface can effectively separate electron–hole pairs, which can effectively increase the photocurrent and suppress the dark current. The p–n junction can provide a good depletion layer, so p–n junction photodetectors based on two-dimensional materials are rapidly developing. In this study, Nb-doped MoS2 as a p-type semiconductor and n-type α-In2Se3 were used to form a van der Waals heterojunction photodetector. This photodetector achieves photodetection in the visible to near-infrared range with a responsivity (R) of 87 A/W and a specific det
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38

Cheng, Xin, Jiao Peng, Yanan Cao, et al. "Ultra-low dark current photodetector based on two-dimensional CuCrP2S6 material." Applied Physics Letters 126, no. 17 (2025). https://doi.org/10.1063/5.0264326.

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Metal thiophosphates have recently emerged as promising two-dimensional (2D) materials for the next-generation photodetectors due to their unique physical and optoelectronic properties. Among them, CuCrP2S6 (CCPS) has shown strong potential for photodetection applications. In this study, we developed a photodetector based on CCPS nanoflakes. The optimized device, featuring a 3 μm channel length and a 60 nm CCPS layer, exhibited impressive optoelectronic performance, with a responsivity of 7 mA/W and a detectivity of 6 × 108 Jones for 450 nm light with the light intensity of 0.02 mW/mm2. The de
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39

Tian, Ruijuan, Xuetao Gan, Chen Li, et al. "Chip-integrated van der Waals PN heterojunction photodetector with low dark current and high responsivity." Light: Science & Applications 11, no. 1 (2022). http://dx.doi.org/10.1038/s41377-022-00784-x.

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AbstractTwo-dimensional materials are attractive for constructing high-performance photonic chip-integrated photodetectors because of their remarkable electronic and optical properties and dangling-bond-free surfaces. However, the reported chip-integrated two-dimensional material photodetectors were mainly implemented with the configuration of metal-semiconductor-metal, suffering from high dark currents and low responsivities at high operation speed. Here, we report a van der Waals PN heterojunction photodetector, composed of p-type black phosphorous and n-type molybdenum telluride, integrated
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40

Zhang, Xinyuan, Lina Li, Chengmin Ji, et al. "Rational design of high-quality 2D/3D perovskite heterostructure crystals for record-performance polarization-sensitive photodetection." National Science Review, March 16, 2021. http://dx.doi.org/10.1093/nsr/nwab044.

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Abstract Polarization-sensitive photodetection is central to optics applications and has been successfully demonstrated in photodetectors of two-dimensional (2D) materials, such as layered hybrid perovskites; however, achieving high polarization sensitivity in such a photodetector remains extremely challenging. Here, for the first time, we demonstrate a high-performance polarization-sensitive photodetector using single-crystalline 2D/3D perovskite heterostructure, namely, (4-AMP)(MA)2Pb3Br10/MAPbBr3 (MA = methylammonium; 4-AMP = 4-(aminomethyl)piperidinium), which exhibits ultrahigh polarizati
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WASMAN, Kishwar Mohammed, and Bestoon HAMADAMEEN. "Photodetectors Based on Doped-ZNO Nanoparticle: Synthesis and Optoelectrical Property." Journal of Physical Chemistry and Functional Materials, February 16, 2022. http://dx.doi.org/10.54565/jphcfum.1026868.

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Photodetection has been gained a lot of attention in last years biased on military wide range and civil application. With essential properties of Zno which has the wide band gap, strong radiation hardness, low cost and good chemical stabilities. ZnO are considered as the most successful candidate for UV photodetector. The study of our report is to review photodetectors based on doped Zno nanostructures and the new advances in ZnO nanostructured generation technique including adjustment and doping methods with modifications of ZnO photodetector. Final part of this review is about literature rev
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42

Sa, Zixu, Siying Gao, Zeqi Zang, et al. "Constructing Hybrid Dimensional Nanowires Array/Nanosheet Heterojunction of GaSb/PbI2 for Self‐Powered Imaging, Photocommunication, and Omnidirectional Weak‐Light Photodetection." Advanced Optical Materials, June 13, 2025. https://doi.org/10.1002/adom.202500367.

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AbstractInterface contact and mismatched photosensitive area are challenging the hybrid dimensional heterojunction self‐powered photodetection. Herein, the hybrid dimensional nanowires (NWs) array/nanosheet (NS) heterojunction of GaSb/PbI2 is successfully constructed by the combination of contact printing technology and drop‐casting process. Owing to the build‐in electric field, the as‐fabricated NW/NS heterojunction photodetector exhibits enhanced photoresponse compared to NW and NS photodetectors. Moreover, the NWs array/NS heterojunction photodetector shows an ultralow Idark of 1.12 × 10−13
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43

Oshita, Masaaki, Shiro Saito, and Tetsuo Kan. "Electromechanically reconfigurable plasmonic photodetector with a distinct shift in resonant wavelength." Microsystems & Nanoengineering 9, no. 1 (2023). http://dx.doi.org/10.1038/s41378-023-00504-4.

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AbstractPlasmonic photodetectors have received increasing attention because their detection properties can be designed by tailoring their metal structures on surfaces without using any additional components. Reconfiguration of the plasmonic resonant state in a photodetector is relevant for various applications, including investigating in situ adaptive detection property changes, depending on the situation, and performing single-pixel spectroscopy in geometrically limited regions. However, the spectral responsivity change with conventional reconfiguration methods is relatively small. Here, we p
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Ma, Wanli, Tuntan Wu, Niangjuan Yao, et al. "Bandgap-independent photoconductive detection in two-dimensional Sb2Te3." Communications Materials 3, no. 1 (2022). http://dx.doi.org/10.1038/s43246-022-00292-w.

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AbstractBroadening the spectral range of photodetectors is vital for photodetection. However, current photoelectric detectors are selective to wavelength, which depends on bandgap, and thermal detectors respond slowly at room temperature. It is challenging to achieve photoconductivity independent of the semiconductor bandgap, which is needed to broaden the spectral range of photodetectors. Here, we use 2D semiconductor Sb2Te3 to develop a photodetector with metal-semiconductor-metal structure for multiband response, covering visible, infrared, terahertz and millimeter wavelengths at room tempe
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45

Banerjee, Debika, Ivy M. Asuo, Francois-Xavier Fortier, Alain Pignolet, and Sylvain Cloutier. "Broadband nanoplasmonic photodetector fabricated in ambient condition." Nano Express, November 15, 2022. http://dx.doi.org/10.1088/2632-959x/aca2c8.

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Abstract Surface plasmon are widely used to promote the exciton generation and light absorption in solar cells and photodetectors. In this work, a feasible approach for UV-VIS-NIR photodetection using plasmon-enhanced silicon nanowires (SiNWs) and amorphous TiO2 heterostructure is presented. The photodetector shows excellent photo response up to 3.3 orders of magnitude enhancement with rise/decay times of 77/51 µs. Under small external bias (1V), the photodetector exhibits very high responsivity up to 49 A/W over a broadband wavelength range from 300-1100 nm. All the experimental procedures ar
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46

Liu, Zeng, and Weihua Tang. "A review of Ga2O3 deep-ultraviolet metal-semiconductor Schottky photodiodes." Journal of Physics D: Applied Physics, January 27, 2023. http://dx.doi.org/10.1088/1361-6463/acb6a5.

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Abstract Deep-ultraviolet (DUV) photodetectors are fundamental building blocks in lots of solid-state DUV optoelectronics, whose prosperity is pinned hope on continuous innovations on semiconductor materials and physics of device structures. Conquering the technological obstacles in narrow bandgap silicon-based optoelectronics (photodetectors and photonics), wide bandgap semiconductor gained a high level of enthusiasm in constructing DUV photodetector, thereinto Ga2O3 is a typical representative benefiting from its promising physical and chemical properties in nature, especially for its energy
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47

Wang, Ziqian, Huide Wang, Chen Wang, et al. "Artificial intelligence driven Mid-IR photoimaging device based on van der Waals heterojunctions of black phosphorus." Nanophotonics, February 13, 2025. https://doi.org/10.1515/nanoph-2024-0613.

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Abstract Mid-infrared (Mid-IR) photodetection and imaging are pivotal across diverse applications, including remote sensing, communication, and spectral analysis. Among these, single-pixel imaging technology is distinguished by its exceptional sensitivity, high resolution attainable through the sampling system, and economic efficiency. The quality of single-pixel imaging primarily depends on the performance of the photodetector and the sampling system. Photodetectors based on black phosphorus (BP) exhibit low dark current, high specific detectivity (D *), and room-temperature operability. Arti
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48

Bansal, Shonak, Sandeep Kumar, Arpit Jain, et al. "Design and TCAD analysis of few-layer graphene/ZnO nanowires heterojunction-based photodetector in UV spectral region." Scientific Reports 15, no. 1 (2025). https://doi.org/10.1038/s41598-025-92596-3.

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Abstract Graphene and zinc oxide (ZnO) nanowires (NWs)-based photodetectors demonstrate excellent photodetection performance in the ultraviolet (UV) spectrum regime. This paper presents the design and analysis of a heterostructure model of p+-few-layer graphene (p+-FLG)/n–-ZnO NWs-based UV photodetector. The design utilizes the unique properties of few-layer graphene to enhance light absorption and improve photodetector performance. The analysis under both self-biasing and conductive modes of operation reveals that the integrated electric field and the photovoltaic effect at the p⁺-FLG/n⁻-ZnO
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Miah, Md Rashed, Md Islahur Rahman Ebon, Ahnaf Tahmid Abir, and Jaker Hossain. "Modeling and Numerical Insights of TiSe2 Compound‐Based Photodetector." Advanced Theory and Simulations, August 3, 2024. http://dx.doi.org/10.1002/adts.202400389.

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AbstractThis study presents a comprehensive simulation of a TiSe2‐based photodetector, an optoelectronic device adept at converting a spectrum of electromagnetic radiation spanning ultraviolet (UV), visible, and infrared wavelengths into electrical signals. The TiSe2 absorber material is characterized by a narrow direct bandgap of 1.2 eV, endowing the photodetector with superior optical and electronic attributes that enhance its photodetection capabilities. In‐depth analysis of the energy band diagram, the current‐voltage (J‐V) characteristics, and spectral responses is conducted. This article
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Wu, Tuntan, Qinxi Qiu, Yongzhen Li, et al. "High sensitivity of semimetal photodetection via Bose–Einstein condensation." InfoMat, November 20, 2023. http://dx.doi.org/10.1002/inf2.12492.

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AbstractThe discovery of semiconductor has witnessed remarkable strides toward high performance of photodetectors attributed to its excellent carrier properties. However, semimetal, owning to the high carrier concentration and low carrier mobility compared to those of semiconductor, is generally considered unsuitable for photodetection. Herein, we demonstrate an outstanding photodetection in a layered semimetal titanium diselenide (TiSe2) in Bose–Einstein condensation (BEC) state. High sensitivity of semimetal photodetector is realized in the range of visible, infrared and terahertz bands. The
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