Dissertations / Theses on the topic 'Photodiodes avalanche ?? photon unique'
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B??rub??, Beno??t-Louis. "Conception de matrices de diodes avalanche ?? photon unique sur circuits int??gr??s CMOS 3D." Thèse, Universit?? de Sherbrooke, 2014. http://savoirs.usherbrooke.ca/handle/11143/92.
Full textBérubé, Benoît-Louis. "Conception de matrices de diodes avalanche à photon unique sur circuits intégrés CMOS 3D." Thèse, Université de Sherbrooke, 2014. http://savoirs.usherbrooke.ca/handle/11143/92.
Full textPellion, Denis. "Modélisation, fabrication et évaluation des photodiodes à avalanche polarisées en mode Geiger pour la détection du photon unique dans les applications Astrophysiques." Phd thesis, Université Paul Sabatier - Toulouse III, 2008. http://tel.archives-ouvertes.fr/tel-00358847.
Full textDans l'état de l'art le meilleur détecteur de lumière est aujourd'hui le Photomultiplicateur (PMT), grâce à ses caractéristiques de sensibilité et de vitesse. Mais il présente quelques inconvénients : faible efficacité quantique, coût, poids etc. Nous présentons dans cette thèse une nouvelle technologie alternative : les compteurs de photons sur semi-conducteur, constitués de photodiodes polarisées en mode Geiger.
Ce mode de fonctionnement permet d'obtenir un effet de multiplication au moins identique à celui des PMT. Un modèle physique et électrique a été développé pour reproduire le comportement de ce détecteur.
Nous présentons ensuite dans ce travail de thèse un procédé technologique original permettant la réalisation de ces dispositifs dans la centrale de technologie du LAAS-CNRS, avec la simulation de chaque opération du processus.
Nous avons mis au point une fiche pour la caractérisation électrique des dispositifs, du mode statique au mode dynamique, et vérifié la conformité aux simulations SILVACO, et au modèle initial. Les résultats obtenus sont déjà excellents, compte tenu qu'il s'agit d'une première étape de prototypage, et comparables avec les résultats publiés dans la littérature.
Ces composants sur silicium peuvent intervenir dans toutes les applications où il y a un photomultiplicateur, et le remplacer. Les applications sont donc très vastes et la croissance du marché très rapide. Nous présentons une première expérience d'astrophysique installée au Pic du Midi qui a détecté des flashs Tcherenkov de rayons cosmiques avec cette nouvelle technologie à semi-conducteur.
Panglosse, Aymeric. "Modélisation pour la simulation et la prédiction des performances des photodiodes à avalanche en mode Geiger pour Lidars spatiaux." Thesis, Toulouse, ISAE, 2019. http://www.theses.fr/2019ESAE0046.
Full textThis work focuses on modelling for simulation and prediction purposes ofCMOS SPADs performance parameters used in spaceborne Lidars. The innovative side ofthis work lies in a new methodology based on physical models for semiconductor devices,measurements performed on the targeted CMOS process and commercial simulation tools topredict CMOS SPADs performances. This method allows to get as close as possible to theprocess reality and to improve predictions. A set of SPAD has been designed and fabricated,and is used for measurements and model validation. SPAD design has been done with respectto CNES and Airbus Defence Space Lidar specification, in order to produce devices that willimprove our knowledge in terms of understanding of the involved physical mechanisms, SPADsdesign and test method, for a possible integration within their future spaceborne Lidars
Parent, Samuel. "Conception, caractérisation et optimisation de SPAD en technologie Dalsa HV CMOS 0.8 μm pour intégration dans un 3D-SiPM." Mémoire, Université de Sherbrooke, 2016. http://hdl.handle.net/11143/8850.
Full textAbstract : Single Photon Avalanche Diodes (SPAD) generate much interest in applications which require single photon detection and excellent timing resolution, such as high energy physics and medical imaging. In fact, SPAD arrays such as Silicon PhotoMultipliers (SiPM) are gradually replacing PhotoMultiplier Tubes (PMT) and Avalanche PhotoDiodes (APD). There is now a trend moving towards SPAD arrays in CMOS technologies with smart pixels control for high timing demanding applications. Making SPAD in commercial CMOS technologies provides several advantages over optoelectronic processes such as lower costs, higher production capabilities, easier electronics integration and system miniaturization. However, the major drawback is the lack of flexibility when designing the SPAD architecture because all fabrication steps are fixed by the CMOS technology used. Another drawback of CMOS SPAD arrays is the loss of photosensitive areas caused by the CMOS circuits integration. This document presents SPAD design, characterization and optimization made in a commercial CMOS technology (Teledyne DALSA 0.8 µm HV CMOS - TDSI CMOSP8G). Custom process variations have been performed in partnership with the CMOS foundry to optimize the SPAD while keeping the CMOS line compatibility. The realized SPAD and SPAD arrays are dedicated to 3D integration with either low-cost TDSI CMOS electronics or advanced deep sub-micron CMOS electronics to perform a 3D digital SiPM (3D-SiPM). The novel 3D-SiPM is intended to replace PMT, APD and commercially available SiPM in timing demanding applications. The group main objective is to develop a 10 ps timing resolution 3D-SiPM for use in high energy physics and medical imaging applications. Those applications require reliable technologies with a certified production capability, which justifies the actual effort to use commercial CMOS line to develop our 3D-SiPM. This dissertation focuses on SPAD design, characterization and optimization made in the TDSI-CMOSP8G technology.
Tapan, Ilhan. "Avalanche photodiodes as proportional photon detectors." Thesis, University of Bristol, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.389143.
Full textVestby, Aksel Jan Verne. "Calculation of Terminal Currents in Single Photon Excited Avalanche Photodiodes." Thesis, Norges teknisk-naturvitenskapelige universitet, Institutt for fysikk, 2012. http://urn.kb.se/resolve?urn=urn:nbn:no:ntnu:diva-19691.
Full textStrasburg, Jana Dee. "Characterization of avalanche photodiode arrays for temporally resolved photon counting /." Thesis, Connect to this title online; UW restricted, 2004. http://hdl.handle.net/1773/9710.
Full textZhang, Yun. "Fabrication and characterization of GaN visible-blind ultraviolet avalanche photodiodes." Thesis, Atlanta, Ga. : Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/29604.
Full textCommittee Chair: Shen, Shyh-Chiang; Committee Member: Doolittle, William A.; Committee Member: Dupuis, Russell Dean. Part of the SMARTech Electronic Thesis and Dissertation Collection.
Devita, Marie. "Mesure et dangerosité des métaux nobles pour les photodétecteurs à avalanche à photon unique." Thesis, Strasbourg, 2016. http://www.theses.fr/2016STRAD029/document.
Full textNoble metals (Au, Ag, Pt, Ir, Pd and Ru) are used for the fabrication of microelectronics devices or can be brought by manufacturing tools (alloy components for example). It is well known that these impurities are detrimental to the efficiency of the devices. This implies a real and present need for control of their introduction in clean rooms to diagnose as soon as possible a contamination. Yet, there are no industrial technique for their follow-up at levels about 5.109 at.cm-2 - ITRS recommendations. The relevance of these recommendations according to the electronic device (SPAD in particular) could be questioned. At first, this study consisted in developing a physicochemical technique for the analysis of noble metals on Si wafers by VPD-DC-ICPMS. Then, their dangerousness towards tools and devices was established according to their behavior in temperature and the DCR generated on SPAD devices
Boisvert, Alexandre. "Conception d'un circuit d'étouffement pour photodiodes à avalanche en mode Geiger pour intégration hétérogène 3D." Mémoire, Université de Sherbrooke, 2014. http://hdl.handle.net/11143/6153.
Full textDinh, Xuan Quyen. "Contribution à l'étude et la réalisation de systèmes de transmissions optiques sécurisées." Phd thesis, École normale supérieure de Cachan - ENS Cachan, 2007. http://tel.archives-ouvertes.fr/tel-00204765.
Full textHiskett, Philip Anthony. "Investigation into the photon counting performance of InGaAs/InP separate absorption, grading and multiplication avalanche photodiodes at a wavelength of 1.55#mu#m." Thesis, Heriot-Watt University, 2000. http://hdl.handle.net/10399/557.
Full textNolet, Frédéric. "Conception d'un circuit d'étouffement de photodiodes avalanches monophotoniques pour une intégration matricielle dans un module de comptage monophotonique." Mémoire, Université de Sherbrooke, 2016. http://hdl.handle.net/11143/8827.
Full textCorbeil, Therrien Audrey. "Conception et modélisation de détecteurs de radiation basés sur des matrices de photodiodes à avalanche monophotoniques pour la tomographie d'émission par positrons." Thèse, Université de Sherbrooke, 2018. http://hdl.handle.net/11143/11909.
Full textAbstract : Positron emission tomography (PET) stands out among other imaging modalities by its ability to locate and quantify the presence of marked molecules, called radiotracers, within an organism. The capacity to measure biological activity of various organic tissues provides unique information, essential to the study of cancerous tumors, brain functions and the pharmacodynamics of new medications. Since the very beginings of PET, scientists dreamed of using the photon's time-of-flight information to improve PET images. With the recent progress of Single Photon Avalanche Diodes (SPAD), this dream is now possible. These photodetectors detect the scintillators' low light emission and offers a greatly amplified response with only a small time uncertainty. However the potential of SPAD has not yet been entirely explored. Instead of summing the currents of a SPAD array, it is possible to use their intrinsically binary operation to build a digital photodetector, able to establish with precision the time of arrival of each scintillation photon. With this information, the time-of-flight measurements will be much more precise. Yet the design of digital SPAD arrays is in its infancy and design tools for this purpose are rare. This project proposes a simulator to aid the design of SPAD arrays, both analog and digital. With this tool, we propose an optimised design for a digital SPAD array fabricated in Teledyne Dalsa HV CMOS \SI{0.8}{\micro\metre} technology. In addition to guiding the design choices of our team, this optimisation led to a better understanding which parameters influence the performance of a PET detector. In addition, since the photodetector is not the sole actor in the performance of a PET detector, a study on the effect of scintillators is also presented. This study evaluates the improvement brought by incorporating a prompt photon emission mechanism in LYSO crystals. Finally, we describe a novel approach to energy discrimination based on the timing information of scintillation photons was developped and tested using the simulator. While this simulator and the studies presented in this thesis focus on PET detectors, SPAD are not limited to this sole application. SPAD arrays are promising for a wide variety of fields, including particle physics, high energy physics, quantum computing, LIDAR and many more.
Karve, Gauri Vibhakar Campbell Joe. "Avalanche photodiodes as single photon detectors." 2005. http://repositories.lib.utexas.edu/bitstream/handle/2152/1587/karveg89893.pdf.
Full textKarve, Gauri Vibhakar. "Avalanche photodiodes as single photon detectors." Thesis, 2005. http://hdl.handle.net/2152/1587.
Full textBeck, Ariane Laura 1979. "Wide band gap avalanche photodiodes for ultraviolet single photon detection." 2006. http://hdl.handle.net/2152/12995.
Full textZHANG, HAO-XIANG, and 張皓翔. "Characterized Single-Photon Detection Performances of InGaAs/InP Avalanche Photodiodes System Under Geiger-Mode Operation." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/cp9j27.
Full text國立臺北科技大學
光電工程系
107
In recent years, quantum communication is one of the fast-growing scientific fields. It can be used in the defense, banking, and insurance industries to ensure the safe transmission of information without being stolen. There are three main technologies in quantum communication, namely single photon source technology, quantum coding and transmission technology, and single photon detection technology. The main research of this thesis is to study the design and characterization of single photon detection system. In this study, the system consisted of dual-balanced avalanche photodiode(APD), geiger-mode, gated-quenching, and self-differencing circuit, to detect single photon characteristics. We measure and analyze the characteristic parameters of the single photodiode detection system, including dark count probability (DCP), dark count rate (DCR), single photon detection efficiency (SPDE), noise equipment power (NEP), and after pulsing probability (APP). In experiment, two InGaAs/InP APD devices were used, which were named as APD1 and APD2, respectively. APD1 was mainly used to measure single photon characteristics. To reduce APD1 thermal noise, we controlled the APD1 temperature at -30oC by 3-stage TE cooler and fan module. When APD1 is operating in Geiger mode, we combine the reverse DC bias (VBr - 0.5 V) with the pulse signal so that APD1 switches between the Geiger mode and the return linear mode in a short time. In the Geiger mode, APD1 can detect single photon signals, while in the linear mode, it can suppress avalanche current. However, when the gated pulse signal was added on APD1, the spike noise was generated. At this moment, we could adjust the bias which added at APD2 to generate another matched spike noise signal. The output signals of APD1 and APD2 were sent to differential circuit to eliminate the two spike noises. After the phase elimination, the avalanche signal was then amplified by an amplifier. Finally, the avalanche signal waveform was observed by oscilloscope and the signal counts was counted by a photon counter (SR400) which was used to take the dark count value and the light count value. single photon detection efficiency, dark count probability, dark count rate, noise equipment power, and afterpulsing probability were obtained through formula calculation. In this study, we changed the temperature (from -30oC to 20oC) and pulse width (from 2 ns to 5 ns) to measure the characteristics of single photons and analyze their measurement results. Under the temperature of -30 ° C, gated frequency of 2 MHz, gated pulse width of 2 ns and excess bias voltage of 1.9 V, we obtained DCR of 1.4×106 Hz, DCP of 2.81×10-3, SPDE of 13.95 %, NEP of 1.54×10-15 (W/Hz)1/2 and APP of 4.95 %.