Relevant bibliographies by topics / Photoluminescence spectroscopy

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Photoluminescence spectroscopy'

Author: Grafiati
Published: 4 June 2021
Last updated: 6 September 2023

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Journal articles on the topic "Photoluminescence spectroscopy"

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Olsthoorn, S. M., F. A. J. M. Driessen, A. P. A. M. Eijkelenboom, and L. J. Giling. "Photoluminescence and photoluminescence excitation spectroscopy of Al0.48In0.52As." Journal of Applied Physics 73, no. 11 (June 1993): 7798–803. http://dx.doi.org/10.1063/1.353953.

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Xue Li, Ying, Xing Zhang, Yan Luo, and Yang Yuan Wang. "Photoluminescence spectroscopy of SIMOX." Journal of Non-Crystalline Solids 254, no. 1-3 (September 1999): 134–38. http://dx.doi.org/10.1016/s0022-3093(99)00438-x.

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Matsuoka, Masaya, Masakazu Saito, and Masakazu Anpo. "ChemInform Abstract: Photoluminescence Spectroscopy." ChemInform 44, no. 2 (January 8, 2013): no. http://dx.doi.org/10.1002/chin.201302186.

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Gilliland, G. "Photoluminescence spectroscopy of crystalline semiconductors." Materials Science and Engineering: R: Reports 18, no. 3-6 (March 1997): 99–354. http://dx.doi.org/10.1016/s0927-796x(96)00195-7.

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Gilliland, G. D. "Photoluminescence spectroscopy of crystalline semiconductors." Materials Science and Engineering: R: Reports 18, no. 3-6 (March 1997): 99–399. http://dx.doi.org/10.1016/s0927-796x(97)80003-4.

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Fish, M. L., and J. D. Comins. "Photoluminescence Spectroscopy of Synthetic Diamond." Materials Science Forum 239-241 (January 1997): 103–6. http://dx.doi.org/10.4028/www.scientific.net/msf.239-241.103.

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Середин, П. В., Али Обаид Радам, Д. Л. Голощапов, А. С. Леньшин, Н. С. Буйлов, К. А. Барков, Д. Н. Нестеров, et al. "Рост тонкопленочных AlGaN/GaN эпитаксиальных гетероструктур на гибридных подложках, содержащих слои карбида кремния и пористого кремния." Физика и техника полупроводников 56, no. 6 (2022): 547. http://dx.doi.org/10.21883/ftp.2022.06.52587.9816.

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We carried out a structural-spectroscopic study of AlGaN/GaN epitaxial layers grown by molecular-beam epitaxy with nitrogen plasma activation on a hybrid substrate containing layers of silicon carbide and porous silicon. Using X-ray diffractometry, Raman and photoluminescence spectroscopy, it is shown that thin films formed on a hybrid substrate have minimal residual stresses and intense photoluminescence.
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Sarıbıyık, Oğuz Yunus, İlyas Gönül, Burak Ay, and Serkan Karaca. "The effect of metalation processes on polymer morphology and conductivity properties." Polymers and Polymer Composites 29, no. 9_suppl (November 2021): S1340—S1350. http://dx.doi.org/10.1177/09673911211048287.

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In this work, an insoluble three dimensional (3D) porous polymeric structure and their metal complexes were synthesised by the condensation reactions of meta(m)-phenylenediamine, para(p)-phenylenediamine and glutaraldehyde. The morphological and spectral features of the porous polymeric structures were determined using different analytical and spectroscopic methods, including field emission scanning electron microscopy, four-point probe electrical conductivity, photoluminescence spectroscopy, Fourier-transform infrared spectroscopy, surface area Brunauer–Emmett–Teller and magnetic and thermal behaviours. According to the obtained data, the shape, size and photoluminescence properties of the compounds, especially the conductivity, were clearly changed after the metalation processes.
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Allard, L. B., S. Charbonneau, and Jeff F. Young. "A versatile, low light level optical detection system: from time-integrated emission spectra to time-resolved, two-dimensional emission mapping." Canadian Journal of Physics 70, no. 10-11 (October 1, 1992): 1199–204. http://dx.doi.org/10.1139/p92-193.

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We describe a novel, low light level optical detection system that can be easily configured for various modes of operation. These include (i) time-integrated photoluminescence spectroscopy, (ii) transient, spectrally gated photoluminescence decay, (iii) time-windowed photoluminescence spectroscopy, (iv) two-dimensional, time-integrated photoluminescence mapping, and (v) time-resolved, two-dimensional photoluminescence mapping with a time resolution of ~100 ps. This new detection system is described technically and examples are given of how it can be used to study a variety of different recombination processes in semiconductors.
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Ćulubrk, Sanja, Željka Antić, Vesna Lojpur, Milena Marinović-Cincović, and Miroslav D. Dramićanin. "Sol-Gel Derived Eu3+-Doped Gd2Ti2O7Pyrochlore Nanopowders." Journal of Nanomaterials 2015 (2015): 1–8. http://dx.doi.org/10.1155/2015/514173.

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Herein we presented hydrolytic sol-gel synthesis and photoluminescent properties of Eu3+-doped Gd2Ti2O7pyrochlore nanopowders. According to Gd2Ti2O7precursor gel thermal analysis a temperature of 840°C is identified for the formation of the crystalline pyrochlore phase. Obtained samples were systematically characterized by powder X-ray diffraction, scanning and transmission electron microscopy, and photoluminescence spectroscopy. The powders consist of well-crystalline cubic nanocrystallites of approximately 20 nm in size as evidenced from X-ray diffraction. The scanning and transmission electron microscopy shows that investigated Eu3+-doped Gd2Ti2O7nanopowders consist of compact, dense aggregates composed entirely of nanoparticles with variable both shape and dimension. The influence of Eu3+ions concentration on the optical properties, namely, photoluminescence emission and decay time, is measured and discussed. Emission intensity as a function of Eu3+ions concentration shows that Gd2Ti2O7host can accept Eu3+ions in concentrations up to 10 at.%. On the other hand, lifetime values are similar up to 3 at.% (~2.7 ms) and experience decrease at higher concentrations (2.4 ms for 10 at.% Eu3+). Moreover, photoluminescent spectra and lifetime values clearly revealed presence of structural defects in sol-gel derived materials proposing photoluminescent spectroscopy as a sensitive tool for monitoring structural changes in both steady state and lifetime domains.
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Dissertations / Theses on the topic "Photoluminescence spectroscopy"

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Harrison, Dale A. "Photoluminescence spectroscopy of D§- states in GaAs." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1998. http://www.collectionscanada.ca/obj/s4/f2/dsk2/tape15/PQDD_0006/NQ37711.pdf.

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Dybiec, Maciej. "Spatially resolved photoluminescence spectroscopy of quantum dots." [Tampa, Fla] : University of South Florida, 2006. http://purl.fcla.edu/usf/dc/et/SFE0001767.

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McGhee, Ewan James. "The photoluminescence spectroscopy of single quantum dots." Thesis, Heriot-Watt University, 2004. http://hdl.handle.net/10399/1116.

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Thảo. "Photoluminescence spectroscopy on erbium-doped and porous silicon." Amsterdam : Amsterdam : [s.n.] ; Universiteit van Amsterdam [Host], 2000. http://dare.uva.nl/document/83659.

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Tsagli, Kelvin Xorla. "Temperature Dependence of Photoluminescence Spectra in Polystyrene." University of Akron / OhioLINK, 2021. http://rave.ohiolink.edu/etdc/view?acc_num=akron1625744248503334.

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Amloy, Supaluck. "Polarization-resolved photoluminescence spectroscopy of III-nitride quantum dots." Doctoral thesis, Linköpings universitet, Halvledarmaterial, 2013. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-87748.

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In this thesis, results from studies on (In)GaN quantum dots (QDs) are presented, including investigations of the structural, optical and electronic properties. The experimental studies were performed on GaN and InGaN QDs grown by molecular beam epitaxy, taking advantage of the Stranki-Krastanov growth mode for the GaN QD samples and the composition segregation for the InGaN QD samples. Optical spectroscopy of the (In)GaN QDs was performed with a combination of different experimental techniques, e.g. stationary microphotoluminescence (μPL) and timeresolved μPL. The μPL spectroscopy is suitable for studies of single QDs due to the wellfocused excitation laser spot, and it typically does not require any special sample preparation. The powerful combination of power and polarization dependences was used to distinguish the exciton and the biexciton emissions from other emission lines in the recorded spectra. The QDs could be observed with random in-plane anisotropy, as determined by the strong linear polarization for single QDs but with different angular orientation from dot to dot. Additionally, these experimental results are in good agreement with the computational results revealing a similar degree of polarization for the exciton and the biexciton emissions. Further, the theory predicts that the discrepancy of the polarization degree is larger between the positive and negative trions in comparison with the exciton and the biexciton. Based on this result, polarization resolved spectroscopy is proposed as a simple tool for the identification of trions and their charge states. The fine-structure splitting (FSS) and the biexciton binding energy (Ebxx) are essential QD parameters of relevance for the possible generation of quantum entangled photon pairs in a cascade recombination of the biexciton. In general, the Coulomb interaction between the negatively charged electron and the positively charged hole lifts the fourfold degeneracy of the electron and hole pair ground state, forming a set of zero-dimensional exciton states of unequal energies. This Coulomb-induced splitting, referred to as the FSS, results in an electronic fine structure, which is strongly dependent on the symmetry of the exciton wave function. The FSS was in this work resolved and investigated for excitons in InGaN QDs, using polarization-sensitive μPL spectroscopy employed on the cleaved-edge of the samples. As expected, the FSS is found to exhibit identical magnitudes, but with reversed sign for the exciton and the biexciton. For quantum information applications, a vanishing FSS is required, since otherwise the emissions of the polarization-entangled photon pairs in the cascade biexciton recombination will be prohibited. The biexcitons are found to exhibit both positive and negative binding energies for the investigated QDs. Since a negative binding energy indicates a repulsive Coulomb interaction, such biexcitons (or exciton complexes) cannot exist in structures of higher dimensionality. On the other hand, a biexciton with a negative binding energy can be found in QDs, since the exciton complexes still remain bound due to their three dimensional confinement. Moreover, the biexciton binding energy depends on the dot size, which implies that a careful size control of dots could enable manipulation of the biexciton binding energy. A large Ebxx value enables better and cheaper spectral filtering, in order to purify the single photon emission, while a proposed time reordering scheme relies on zero Ebxx for the generation of entangled photons. The dynamics of the exciton and the biexciton emissions from InGaN QD were measured by means of time-resolved μPL. The lifetimes of the exciton related emissions are demonstrated to depend on the dot size. Both the exciton and the biexciton emissions reveal mono-exponential decays, with a biexciton lifetime, which is about two times shorter than the exciton lifetime. This implies that the QD is small, with a size comparable to the exciton Bohr radius. The photon generation rates can be manipulated by controlling the QDs size, which in turn can be utilized for generation of single- and entangled-photons on demand, with a potential for applications in e.g. quantum information. The polarization of the emitted single photons can be manipulated by using a polarizer, but to the prize of photon loss and reduced emission intensity. Alternative methods to control the polarization of the emission light are a manipulation of the dot symmetry statically by its shape or dynamically by an externally applied electric field. Predictions based on performed calculations show that in materials with a small spin-orbit split-off energy (ΔSO), like the III-nitride materials, the polarization degree of the emission is more sensitive to dot asymmetry than in materials with a large value for ΔSO, e.g. the III-arsenide materials. Moreover, for an electric field applied in the 1͞10 and the 11͞2 directions of the zinc-blende lens-shaped QDs grown on the (111) plane, the polarization degree of InN QDs is found to be significantly more, by a factor of ~50 times, sensitive to the electric field than for GaN QDs. This work demonstrates that especially the InN based QD, are suitable for manipulation of the polarization by the direct control of the dot symmetry or by externally applied electric fields.
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Karlberg, Thomas Andre. "Optical Studies of Single Semiconductor Nanowires by Micro-Photoluminescence Spectroscopy." Thesis, Norges teknisk-naturvitenskapelige universitet, Institutt for elektronikk og telekommunikasjon, 2010. http://urn.kb.se/resolve?urn=urn:nbn:no:ntnu:diva-11147.

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Over the recent years semiconductor nanowires have gained much attention for their potential to either improve existing technology or create novel devices. This potential has been realized in devices such as semiconductor nanowire lasers[2-3] and nanowire single-photon detectors[4]. With nanowire technology it could be possible to create single-photon nanowire lasers that emit photons in the near infrared region. Such devices should prove very interesting for telecommunications and quantum cryptography.The purpose of this master thesis was the study of the optical properties of GaAs nanowires with GaAsSb inserts. For this reason, both nanowires with and without an AlGaAs coating to increase the nanowire Quantum Efficiency (QE) have been subjected to low temperature PL spectroscopy. In an attempt to determine the physical origin of the different optical properties of different nanowires, µ-PL spectroscopy, Scanning Transmission Electron Microscopy (STEM) and Transmission Electron Microscopy (TEM) was carried out on the same nanowires of a sample with AlGaAs shell nanowires. Through these measurements, it was found that STEM at 30 kV did not change the optical properties of the nanowire, but 200 kV TEM had a detrimental effect on nanowire PL. Through the structurally and optically correlated examination, it was found that stacking faults near the insert was not the origin of the power dependent behavior of the insert emission, and in combination with PL measurements of both zincblende (ZB) and wurtzite (WZ) GaAs nanowires the electronic band structure of the nanowire inserts was determined to very likely be type-II. Also, a theoretical explanation of the origin of the observed insert emission behavior was presented, and polarization dependent PL measurements were presented and discussed.
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Filippov, Stanislav. "Micro-photoluminescence and micro-Raman spectroscopy of novel semiconductor nanostructures." Doctoral thesis, Linköpings universitet, Funktionella elektroniska material, 2015. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-123939.

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Low-dimensional semiconductor structures, such as one-dimensional nanowires (NWs) and zerodimensional quantum dots (QDs), are materials with novel fundamental physical properties and a great potential for a wide range of nanoscale device applications. Here, especially promising are direct bandgap II-VI and III-V compounds and related alloys with a broad selection of compositions and band structures. For examples, NWs based on dilute nitride alloys, i.e. GaNAs and GaNP, provide both an optical active medium and well-shaped cavity and, therefore, can be used in a variety of advanced optoelectronic devices including intermediate band solar cells and efficient light-emitters. Self-assembled InAs QDs formed in the GaAs matrix are proposed as building blocks for entangled photon sources for quantum cryptography and quantum information processing as well as for spin light emitting devices. ZnO NWs can be utilized in a variety of applications including efficient UV lasers and gas sensors. In order to fully explore advantages of nanostructured materials, their electronic properties and lattice structure need to be comprehensively characterized and fully understood, which is not yet achieved in the case of aforementioned material systems. The research work presented this thesis addresses a selection of open issues via comprehensive optical characterization of individual nanostructures using micro-Raman ( -Raman) and micro-photoluminescence ( -PL) spectroscopies. In paper 1 we study polarization properties of individual GaNP and GaP/GaNP core/shell NWs using polarization resolved μ-PL spectroscopy. Near band-edge emission in these structures is found to be strongly polarized (up to 60% at 150K) in the orthogonal direction to the NW axis, in spite of their zinc blende (ZB) structure. This polarization response, which is unusual for ZB NWs, is attributed to the local strain in the vicinity of the N-related centers participating in the radiative recombination and to their preferential alignment along the growth direction, presumably caused by the presence of planar defects. Our findings therefore show that defect engineering via alloying with nitrogen provides an additional degree of freedom to control the polarization anisotropy of III-V nanowires, advantageous for their applications as a nanoscale source of polarized light. Structural and optical properties of novel coaxial GaAs/Ga(N)As NWs grown on Si substrates, were evaluated in papers 2-4. In paper 2 we show by using -Raman spectroscopy that, though nitrogen incorporation shortens a phonon correlation length, the GaNAs shell with [N]<0.6% has a low degree of alloy disorder and weak residual strain. Additionally, Raman scattering by the GaAs-like and GaNlike phonons is found to be enhanced when the excitation energy approaches the E+ transition energy. This effect was attributed the involvement of intermediate states that were created by N-related clusters in proximity to the E+ subband. Recombination processes in these structures were studied in paper 3 by means of μ-PL, μ-PL excitation (μ-PLE), and time-resolved PL spectroscopies. At low temperatures, the alloy disorder is found to localize photo-excited carriers leading to predominance of localized exciton (LE) transitions in the PL spectra. Some of the local fluctuations in N composition are suggested to create three-dimensional confining potentials equivalent to that for QDs, based on the observation of sharp PL lines within the LE contour. In paper 4 we show that the formation of these QD-like confinement potentials is somewhat facilitated in spatial regions of the NWs with a high density of structural defects, based on correlative spatially-resolved structural and optical studies. It is also concluded the principal axis of these QD-like local potentials is mainly oriented along the growth direction and emit light that is linearly polarized in the direction orthogonal to the NW axis. At room temperature, the PL emission is found to be dominated by recombination of free carriers/excitons and their lifetime is governed by non-radiative recombination via surface states. The surface recombination is found to become less severe upon N incorporation due to N-induced modification of the surface states, possibly due to partial surface nitridation. All these findings suggest that the GaNAs/GaAs hetero-structures with the onedimensional geometry are promising for fabrication of novel optoelectronic devices on foreign substrates (e.g. Si). Fine-structure splitting (FSS) of excitons in semiconductor nanostructures has significant implications in photon entanglement, relevant to quantum information technology and spintronics. In paper 5 we study FSS in various laterally-arranged single quantum molecular structures (QMSs), including double QDs (DQDs), quantum rings (QRs), and QD-clusters (QCs), by means of polarization resolved μ-PL spectroscopy. It is found that FSS strongly depends on the geometric arrangements of the QMSs, which can effectively tune the degree of asymmetry in the lateral confinement potential of the excitons and can reduce FSS even in a strained QD system to a limit similar to strain-free QDs. Fabrication of nanostructured ZnO-based devices involves, as a compulsory step, deposition of thin metallic layers. In paper 6 we investigate impact of metallization by Ni on structural quality of ZnO NWs by means of Raman spectroscopy. We show that Ni coating of ZnO NWs causes passivation of surface states responsible for the enhanced intensity of the A1(LO) in the bare ZnO NWs. From the resonant Raman studies, strong enhancement of the multiline Raman signal involving A1(LO) in the ZnO/Ni NWs is revealed and is attributed to the combined effects of the Fröhlich interaction and plasmonic coupling. The latter effect is also suggested to allow detection of carbon-related species absorbed at the surface of a single ZnO/Ni NW, promising for utilizing such structures as efficient nano-sized gas sensors.
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Mellor, Ian. "Isotopic oxygen exchange reactions on magnesium oxide." Thesis, Nottingham Trent University, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.298901.

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Pemasiri, Karunananda. "Investigation of zincblende, wurtzite, and mixed phase InP nanowires by photocurrent, photoluminescence and time-resolved photoluminescence spectroscopies." University of Cincinnati / OhioLINK, 2013. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1377873494.

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Books on the topic "Photoluminescence spectroscopy"

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Case, Merle A. Photoluminescence: Applications, types and efficacy. Hauppauge, N.Y: Nova Science Publishers, 2011.

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Challa S.S.R. Kumar. UV-VIS and Photoluminescence Spectroscopy for Nanomaterials Characterization. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013.

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Kumar, Challa, ed. UV-VIS and Photoluminescence Spectroscopy for Nanomaterials Characterization. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-27594-4.

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Perkowitz, S. Optical characterization of semiconductors: Infrared, Raman, and photoluminescence spectroscopy. London: Academic Press, 1993.

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Handbook of luminescent semiconductor materials. Boca Raton: Taylor & Francis, 2012.

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Merdzhanova, Tsvetelina. Microcrystalline silicon films and solar cells investigated by photoluminescence spectroscopy. Jülich: Forschungszentrum Jülich, 2005.

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Steger, Michael. Transition-Metal Defects in Silicon: New Insights from Photoluminescence Studies of Highly Enriched 28Si. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013.

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Uvvis And Photoluminescence Spectroscopy For Nanomaterials Characterization. Springer, 2012.

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Brendan, Ryan. Characterisation of GaN using cathodoluminescence and photoluminescence spectroscopy. 2003.

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Challa S.S.R. Kumar. UV-VIS and Photoluminescence Spectroscopy for Nanomaterials Characterization. Springer, 2016.

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Book chapters on the topic "Photoluminescence spectroscopy"

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Matsuoka, Masaya, Masakazu Saito, and Masakazu Anpo. "Photoluminescence Spectroscopy." In Characterization of Solid Materials and Heterogeneous Catalysts, 149–84. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2012. http://dx.doi.org/10.1002/9783527645329.ch4.

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Sobiesierski, Zbig. "Photoluminescence Spectroscopy." In Epioptics, 133–62. Berlin, Heidelberg: Springer Berlin Heidelberg, 1995. http://dx.doi.org/10.1007/978-3-642-79820-7_6.

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Yoshikawa, Masanobu. "Photoluminescence (PL) Spectroscopy." In Advanced Optical Spectroscopy Techniques for Semiconductors, 27–32. Cham: Springer International Publishing, 2023. http://dx.doi.org/10.1007/978-3-031-19722-2_3.

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Li, Qinghe, Masakazu Anpo, Jinmao You, Tingjiang Yan, and Xinchen Wang. "Photoluminescence (PL) Spectroscopy." In Springer Handbook of Advanced Catalyst Characterization, 295–321. Cham: Springer International Publishing, 2023. http://dx.doi.org/10.1007/978-3-031-07125-6_14.

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Borchert, Holger. "Absorption and Photoluminescence Spectroscopy." In Solar Cells Based on Colloidal Nanocrystals, 119–27. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-04388-3_8.

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Mino, Lorenzo, Masaya Matsuoka, and Gianmario Martra. "Case Studies: Photoluminescence (PL) Spectroscopy." In Springer Handbook of Advanced Catalyst Characterization, 323–36. Cham: Springer International Publishing, 2023. http://dx.doi.org/10.1007/978-3-031-07125-6_15.

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Vale, G. "The Photoluminescence and Biochemical Properties of Biological." In Spectroscopy of Biological Molecules, 617. Dordrecht: Springer Netherlands, 1995. http://dx.doi.org/10.1007/978-94-011-0371-8_284.

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Kůsová, Kateřina. "Photoluminescence Spectroscopy of Single Semiconductor Quantum Dots." In 21st Century Nanoscience – A Handbook, 21–1. Boca Raton, Florida : CRC Press, [2020]: CRC Press, 2020. http://dx.doi.org/10.1201/9780429340420-21.

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Jing, Hao, Li Zhang, and Hui Wang. "Geometrically Tunable Optical Properties of Metal Nanoparticles." In UV-VIS and Photoluminescence Spectroscopy for Nanomaterials Characterization, 1–74. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-27594-4_1.

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Djurišić, A. B., X. Y. Chen, J. A. Zapien, Y. H. Leung, and A. M. C. Ng. "Optical Properties of Oxide Nanomaterials." In UV-VIS and Photoluminescence Spectroscopy for Nanomaterials Characterization, 387–430. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-27594-4_10.

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Conference papers on the topic "Photoluminescence spectroscopy"

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Roth, Diane J., Pavel Ginzburg, Mazhar E. Nasir, Alexey V. Krasavin, Klaus Suhling, David Richards, Viktor A. Podolskiy, and Anatoly V. Zayats. "Metamaterial-enhanced photoluminescence spectroscopy." In Enhanced Spectroscopies and Nanoimaging 2020, edited by Prabhat Verma and Yung Doug Suh. SPIE, 2020. http://dx.doi.org/10.1117/12.2567612.

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McCluskey, Matthew D., Jesse Huso, Slade J. Jokela, Rick Lytel, and Violet M. Poole. "Photoluminescence Mapping of Semiconductors with High Spatial Resolution." In Applied Industrial Spectroscopy. Washington, D.C.: OSA, 2020. http://dx.doi.org/10.1364/ais.2020.atu4i.2.

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DeLong, M. C., R. A. Hogg, D. J. Mowbray, M. Hopkinson, M. S. Skolnick, P. C. Taylor, J. M. Olson, Sarah R. Kurtz, and A. E. Kibbler. "Photoluminescence and photoluminescence excitation spectroscopy in ordered and disordered Ga0.52In0.48P." In Photovoltaic advanced research and development project. AIP, 1992. http://dx.doi.org/10.1063/1.42885.

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Young, R. B., and Nelson L. Rowell. "Fourier Transform Spectroscopy Of Semiconductor Photoluminescence." In Intl Conf on Fourier and Computerized Infrared Spectroscopy, edited by David G. Cameron. SPIE, 1989. http://dx.doi.org/10.1117/12.969377.

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Roland, Paul J., Naba R. Paudel, Chuanxiao Xiao, Yanfa Yan, and Randy J. Ellingson. "Photoluminescence spectroscopy of Cadmium Telluride deep defects." In 2014 IEEE 40th Photovoltaic Specialists Conference (PVSC). IEEE, 2014. http://dx.doi.org/10.1109/pvsc.2014.6925633.

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Ghenuche, Petru, Daniel ten Bloemendal, Romain Quidant, Iain G. Cormack, Pablo Loza-Alvarez, and Gonçal Badenes. "Two-photon photoluminescence spectroscopy of metal dimers." In Photonics Europe, edited by David L. Andrews, Jean-Michel Nunzi, and Andreas Ostendorf. SPIE, 2006. http://dx.doi.org/10.1117/12.661856.

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Keitel, Robert C., Felipe V. Antolinez, Stefan Meyer, Raphael Brechbühler, Maria del Henar Rojo Sanz, and David J. Norris. "Photoluminescence Excitation Spectroscopy on Individual Quantum Emitters." In Internet Conference for Quantum Dots. València: Fundació Scito, 2020. http://dx.doi.org/10.29363/nanoge.icqd.2020.046.

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Savio, Roberto Lo, Simone Luca Portalupi, Matteo Galli, Dario Gerace, Lucio C. Andreani, Abdul Shakoor, Liam O'Faolain, et al. "Photoluminescence spectroscopy of silicon photonic crystal nanocavities." In 12th European Quantum Electronics Conference CLEO EUROPE/EQEC. IEEE, 2011. http://dx.doi.org/10.1109/cleoe.2011.5943216.

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Mullen, Ruth Ann, Kimberly L. Schumacher, Barry Wechsler, and Marvin B. Klein. "Photoluminescence Spectroscopy of Doped and Undoped BaTiO3." In Photorefractive Materials, Effects, and Devices II. Washington, D.C.: Optica Publishing Group, 1990. http://dx.doi.org/10.1364/pmed.1990.ap1.

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Abstract:
Despite the many important potential applications for photorefractive BaTiO31, the precise nature and the depth of the photorefractive trapping centers has yet to be positively identified. In one study2, a correlation was noted between the iron concentration as measured with EPR, the photorefractive trap density determined by two-beam coupling versus grating wavevector measurements, and the optical absorption coefficient. This tentatively identified iron as the photorefractive center in commercially-grown, nominally undoped crystals. More recently, high photorefractive gains were reported in nominally iron-free BaTiO3 crystals3, and evidence was presented3,4 that, in purposely iron-doped crystals, the most common valence states for iron are Fe+3 and Fe+4.
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Rowell, N. L. "Radiometric Calibration Of Fourier Transform Semiconductor Photoluminescence." In Intl Conf on Fourier and Computerized Infrared Spectroscopy, edited by David G. Cameron. SPIE, 1989. http://dx.doi.org/10.1117/12.969643.

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Reports on the topic "Photoluminescence spectroscopy"

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Huntley, Emily, Kevin Strong, Brenton Elisberg, Stephen Meserole, and Thomas Wayne Diebold. Photoluminescence Spectroscopy to Determine Residual Stresses in Glass-to-Metal Seals. Office of Scientific and Technical Information (OSTI), December 2019. http://dx.doi.org/10.2172/1592889.

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