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Relevant bibliographies by topics / Photoplasticité

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Journal articles
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Academic literature on the topic 'Photoplasticité'

Author: Grafiati

Published: 4 June 2021

Last updated: 13 February 2022

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Journal articles on the topic "Photoplasticité"

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Trunov, M. L., Sergey N. Dub, and R. S. Shmegera. "Light-Induced Structural Relaxation and the Photoplastic Effect in Chalcogenide Glasses." Solid State Phenomena 115 (August 2006): 245–50. http://dx.doi.org/10.4028/www.scientific.net/ssp.115.245.

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The combination of depth-sensing indentation and band-gap illumination has been used to study the photoplastic effect (the reversible influence of light on the flow stress, hardness, and plasticity) in chalcogenide glasses on a nanoscale. The prominent photoplasticity of thin As-Se films has been revealed through deviations in the shape of load-displacement curves during nanoindentation under light illumination from those ones which have been observed for the material in the darkness. The photoinduced changes in static mechanical properties such as nanohardness and elastic (Young’s) modulus have been determined. The highest photoplasticity changes are achieved for As20Se80 films while their photodarkening is the lowest.

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Pellegrino, Joseph, and J. M. Galligan. "Photoplasticity and fracture in HgCdTe." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 3, no. 1 (January 1985): 160–62. http://dx.doi.org/10.1116/1.573191.

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Pellegrino, Joseph, and J. M. Galligan. "On the time delay of the photoplastic effect." Journal of Materials Research 1, no. 1 (February 1986): 3–6. http://dx.doi.org/10.1557/jmr.1986.0003.

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Photoplasticity in mercury cadmium telluride, Hg1-x Cdx Te with x = 0.3, has been studied as a function of light frequency and deformation temperature. We show that there is an easily measurable time delay accompanying irradiation of the crystal and the change in stress. This time delay is temperature dependent, suggesting a diffusion of charge carriers, introduced by the light, to the interior of the crystal. A simple analysis is given of the observed temperature dependence that is consistent with the experiments.

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Kung, Ji-Fu, Ralf Behrensmeier, and James M. Galligan. "A two-step decay process in photoplasticity in CdS." Philosophical Magazine Letters 67, no. 3 (March 1993): 219–23. http://dx.doi.org/10.1080/09500839308240932.

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Moorhoff, Cornelis M., Wayne D. Cook, Tara Schiller, Carl Braybrook, and San H. Thang. "Synthesis of Symmetrical, Substituted (alkane-α,ω-diyl)(bis[3,3′-allyl dithioethers]) Monomers for Photoplastic Polymer Networks." Australian Journal of Chemistry 65, no. 8 (2012): 1165. http://dx.doi.org/10.1071/ch12278.

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Novel symmetrical (alkane-α,ω-diyl)(bis[3,3′-allyl dithioethers]) compounds and their ether analogues, have been synthesised from (alkane-α,ω-diyl)bis([2-{chloromethyl}allyl]sulfane) precursors, for use in crosslinked polymers which exhibit photoplastic behaviour. Facile synthesis and purification of these monomers was achieved if the alkane-α,ω-diyl moiety had at least one oxygen atom in this linker. The number of sulfur atoms in these monomers was varied from four to two to zero to produce monomers which can be used to evaluate their importance on the photoplasticity behaviour.

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Trunov, M. L., S. N. Dub, P. M. Nagy, and S. Kokenyesi. "Photoplasticity of As2Se3 films investigated with combined nanoindentation and AFM methods." Journal of Physics and Chemistry of Solids 68, no. 5-6 (May 2007): 1062–68. http://dx.doi.org/10.1016/j.jpcs.2007.03.008.

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Cook, Wayne D., Sophie Chausson, Fei Chen, Loic Le Pluart, Christopher N. Bowman, and Timothy F. Scott. "Photopolymerization kinetics, photorheology and photoplasticity of thiol-ene-allylic sulfide networks." Polymer International 57, no. 3 (September 11, 2007): 469–78. http://dx.doi.org/10.1002/pi.2357.

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Garosshen, T. J., and J. M. Galligan. "Photoplasticity and photonic control of dislocation densities in type II‐VI semiconductors." Journal of Applied Physics 78, no. 8 (October 15, 1995): 5098–102. http://dx.doi.org/10.1063/1.359741.

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Kung, Ji-Fu, Ralf Behrensmeier, and James M. Galligan. "On the screening effect in photoplasticity and the presence of dislocation currents." Scripta Metallurgica et Materialia 27, no. 10 (November 1992): 1271–76. http://dx.doi.org/10.1016/0956-716x(92)90069-q.

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Lee, J. H., and M. Wan. "Strain distributions in the cold drawing of cylindrical polymeric bars using photoplasticity." Experimental Mechanics 30, no. 2 (June 1990): 145–51. http://dx.doi.org/10.1007/bf02410240.

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Dissertations / Theses on the topic "Photoplasticité"

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Depraetere, Eric. "Propriétés optiques de dislocations dans GaAs : Conséquences sur la photoplasticité et les phénomènes de dégradation." Lille 1, 1989. http://www.theses.fr/1989LIL10025.

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Delineau, Cécile. "Réalisation et mise au point d'un dispositif expérimental de frottement intérieur pour l'étude de la photoplasticité dans Si [le silicium] et GaAs [l'arséniure de gallium]." Poitiers, 1997. http://www.theses.fr/1997POIT2254.

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Les mesures isothermes de frottement interieur connaissent un developpement certain en raison des avantages lies a la large gamme de frequence disponible. En ce qui concerne les solides cristallins ou plus generalement les materiaux presentant de fortes rigidites et de faibles niveaux d'amortissement, les dispositifs les plus performants sont actuellement les pendules forces de torsion. Ces dispositifs presentent cependant un certain nombre d'inconvenients et notamment: - une certaine complexite mecanique entrainant un encombrement important, - une grande sensibilite aux perturbations exterieures, - des difficultes pour l'etude d'echantillons de petites dimensions ou tres fragiles. Le but de notre travail etait de realiser et de mettre au point un dispositif original pour l'etude de la photoplasticite dans les semi-conducteurs. Il s'agit d'un dispositif de frottement interieur de type lame vibrante en oscillations forcees. Les mesures peuvent se faire soit en balayage de temperature (de l'ambiante a 1000c), soit en balayage de frequence (de 10#-#3 a quelques centaines de hertz) pour permettre la determination des energies d'activation des mecanismes elementaires responsables de la mobilite des dislocations. La theorie relative a la mobilite des dislocations dans le silicium et l'arseniure de gallium est exposee dans le premier chapitre. Dans le second sont presentes quelques rappels sur le frottement interieur. Apres une revue critique des differentes methodes de mesure du frottement interieur, nous presentons notre dispositif. Enfin, les resultats obtenus par ces methodes et par les methodes plus classiques (microscopie electronique, figures d'attaque,) sont exposes dans le dernier chapitre et serviront de reference pour les etudes ulterieures

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Pawar, Siddhesh N. "Synthesis and characterization of photoplastic siloxane based thiol-ene polymer systems /." Online version of thesis, 2008. http://hdl.handle.net/1850/9628.

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BARCELOS, CARLOS AUGUSTO CARPANZANO. "PHOTOPLASTICITY APPLIED TO METAL FORMING PROBLEMS: PLANE EXTRUSION." PONTIFÍCIA UNIVERSIDADE CATÓLICA DO RIO DE JANEIRO, 1986. http://www.maxwell.vrac.puc-rio.br/Busca_etds.php?strSecao=resultado&nrSeq=20640@1.

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COMISSÃO NACIONAL DE ENERGIA NUCLEAR
O principal objetivo deste trabalho foi avaliar de forma quantitativa a aplicação da fotoplasticidade como técnica experimental, na predição das grandes deformações plásticas que ocorrem em componentes metálicos, quando são trabalhados em processos de conformação mecânica. Esta avaliação foi feita através do estudo do problema de extrusão plana. As distribuições das deformações obtidas através da analise fotoplastica foram comparadas com as obtidas técnica de malha, em modelos planos feitos de resinas poliéster e epóxi, chumbo e alumínio. Na procura de determinar o polímero que melhor reproduz o comportamento mecânico dos outros materiais comumente empregados em processos de conformação, várias combinações de resinas poliéster rígida e flexível, e uma nova formulação de resinas poliéster rígida e flexível, e uma formulação de resina epóxi ainda em desenvolvimento, foram estudadas quando submetidas a extrusão plana. Os resultados foram comparados com os obtidos para modelos de alumínio e chumbo, submetido ao mesmo processo de conformação mecânica. Embora outras misturas de resina poliéster tenham tido resultados satisfatórios, verificou-se, que a mistura 70 por cento rígida e 30 por cento flexível modela bem as deformações plásticas que ocorrem na extrusão de materiais como chumbo e alumínio, se fatores de correção adequados forem utilizados.
The main objetive of this thesis is to evalute in a quantitative manner the possibility of employing photoplasticity as na experimental techinique for the predection of large plastic strains which occur in mechamnical forming. This was made throught an experimental study of the plane extrusion problem. Distribuitions of strains obtained through the photoplastic analystic were compared to those obtained by the grid technique in plane models made of spoxy and polyester resinds, lead and aluminum. Trying to determine the polymer that best reproduces the mechanical behavior of other materials commonly used in forming processes, several combinations of rigid and flexible polyester resins and a new formulation of a epoxy resin still in development ere studied when submitted to plane extrusion. The results were compared with those obtained from aluminum and lead models subject to the same mechanical process. Although, other combinations of polyester resind present satisfactory results, it was verifyed that the combination of 70 per cent rigid and 30 per cent flexible polyester resins was teh one that best modeled the plastic strains that occurred in the plane extrusion of the aluminum and lead specimens, if appropriate correction factors were aplled to take into account the plastic strain recovery which occurs right after unloading of the polyester specimens.

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KOUBAITI, SALOUA. "Microdurete et photoplasticite des semiconducteurs : une etude comparative des composes zns et gaas." Toulouse, INSA, 1996. http://www.theses.fr/1996ISAT0049.

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Nous avons etudie, par la technique de microindentation vickers sous illumination a temperature ambiante, l'effet photoplastique dans les composes semiconducteurs zns et gaas. Dans les deux composes, nous montrons que l'illumination par un rayonnement de longueur d'onde proche du seuil d'absorption du materiau modifie sa microdurete, a condition que les charges appliquees a l'indenteur restent faibles. La dependance spectrale est analysee. Zns presente un effet photoplastique positif, qui se manifeste par une augmentation de la durete vickers sous eclairement du compose. L'analyse par microscopie electronique en transmission de la sous structure des defauts engendres par la deformation, montre une reduction de la mobilite des dislocations, quelle que soit la nature chimique de leur coeur. Ce phenomene a vraisemblablement son origine dans une augmentation de la barriere de peierls liee a un accroissement de la charge des dislocations sous illumination. Dans gaas, l'effet photoplastique est negatif, mais son intensite s'annule presque completement quand le compose est dope in. L'analyse microstructurale indique que, dans le compose intrinseque, seules les dislocations dont le coeur est compose d'atomes as (en mode glide) voient leurs mobilites augmenter sous l'effet de l'illumination ; dans le materiau dope l'effet inverse se produit. Ceci est interprete dans le cadre des phenomenes lies aux recombinaisons non radiatives des porteurs sur les niveaux associes aux dislocations.

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Kara, Amel. "ETUDE DE LA PLASTICITE ET DE LA PHOTOPLASTICITE DE ZnS TYPE BLENDE ENTRE 300 ET 620 K." Toulouse, INSA, 1989. http://www.theses.fr/1989ISAT0016.

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Nous avons etudie entre 300 et 620 k la plasticite de zns type blende a la fois dans le noir et sous illumination avec une longueur d'onde voisine de la limite d'absorption intrinseque (l'effet photoplastique: e. P. P. ). Nous avons montre que la deformation de ce compose a#i#ib#v#i est gouvernee jusqu'a 400 k par un mecanisme de peierls. Les parametres thermodynamiques de la deformation (energie d'activation des dislocations et volume d'activation) ont ete mesures dans le noir et sous illumination par des experiences de relaxation de contrainte et de sauts de vitesse. Ces mesures montrent que l'illumination augmente l'energie d'activation des dislocations et a donc pour effet principal d'elever la hauteur de la barriere de peierls, ce qui entraine un durcissement de l'echantillon. L'e. P. P. A ete etudie en fonction de divers parametres: temperature, taux de deformation, vitesse de deformation et temps d'illumination. Des observations par microscopie electronique completent ce travail

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Book chapters on the topic "Photoplasticité"

1

Galligan, J. M., T. J. Garosshen, and C. S. Kim. "PHOTOPLASTICITY IN SEMICONDUCTORS." In Defect Control in Semiconductors, 1403–5. Elsevier, 1990. http://dx.doi.org/10.1016/b978-0-444-88429-9.50071-9.

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Conference papers on the topic "Photoplasticité"

1

Zhang, Zuxun. "Modern optical method for strain separation in photoplasticity." In Second Intl Conf on Photomechanics and Speckle Metrology: Speckle Techniques, Birefringence Methods, and Applications to Solid Mechanics. SPIE, 1991. http://dx.doi.org/10.1117/12.49564.

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