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Dissertations / Theses on the topic 'Phototransistor'

Author: Grafiati
Published: 4 June 2021
Last updated: 26 July 2025

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1

Marjanovic, Nenad. "Photoresponsive organic field-effect transistors (photOFETs) photodoping in OFETs." Saarbrücken VDM Verlag Dr. Müller, 2006. http://d-nb.info/989371336/04.

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2

CHENNAFI, NOUREDDINE. "Contribution a l'etude physique et a l'optimisation des phototransistors bipolaires a heterojonction a l'aide d'outils de simulation numerique : application au developpement d'un schema equivalent grand signal du phototransistor." Paris, CNAM, 1999. http://www.theses.fr/1999CNAM0335.

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L'objet du travail presente dans ce memoire concerne la modelisation physique et electrique du phototransistor bipolaire a heterojonction (hpt) utilise comme photodetecteur d'un faisceau lumineux module par une frequence micro-onde. Ce memoire est constitue de trois parties ; la premiere debute par la presentation des differents modeles physiques utilises dans les simulations suivie par une validation du logiciel de simulation numerique bidimensionnel par l'etude d'une structure du transistor bipolaire a heterojonction (hbt) ingap/gaas. Le modele de conservation d'energie associe avec la resol
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3

Тураев, А. А., та А. Р. Жураев. "Модуль приема оптических сигналов с входным каскадом на полевом фототранзисторе". Thesis, Сумский государственный университет, 2016. http://essuir.sumdu.edu.ua/handle/123456789/46212.

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В оптических системах приема сигналов требуются усилители с минимальными искажениями и малыми шумами. Этим требованиям отвечают усилители на полевых транзисторах. Преимущество полевого транзистора состоит в том, что его высокое входное сопротивление обеспечивает низкие уровни собственных шумов. Кроме того путем подбора рабочего режима можно получить качественный прием слабых оптических сигналов. В настоящей работе для приема оптических сигналов предлагается использовать приемный модуль с входным каскадом на полевом фототранзисторе.
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4

Liu, Xiang. "Transistor silicium en couche mince à base de nano-particules de PbS : un efficace phototransistor pour la détection de lumière infrarouge." Thesis, Rennes 1, 2016. http://www.theses.fr/2016REN1S075/document.

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Le phototransistor est un nouveau type de photo-détecteur avec une structure MOSFET spéciale qui peut non seulement convertir la lumière absorbée en variation de courant, mais également auto-amplifier ce photo-courant. En particulier, avec des progrès continus dans la synthèse des points Quantum Dots (QDs), les caractères optiques et électriques uniques renforcent le coefficient d'absorption et la génération des trous d'électrons par des processus intégrés faciles. Dans cette thèse, on a synthétisé les PdS infrarouges PbS avec une large absorption infrarouge (IR) (600-1400 nm) et un rendement
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5

Döge, Jens. "Ladungsbasierte analog-digitale Signalverarbeitung für schnelle CMOS-Bildsensoren /." Dresden : TUDpress, 2008. http://d-nb.info/988195097/04.

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6

Tegegne, Zerihun. "SiGe/Si Microwave Photonic devices and Interconnects towards Silicon-based full Optical Links." Thesis, Paris Est, 2016. http://www.theses.fr/2016PESC1070/document.

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Avec la croissance forte de ces dernières années des objets connectés les technologies de communication optique et radio voient davantage d’opportunités de s’associer et se combiner dans des technologies bas-couts Photoniques-Microondes (MWP). Les réseaux domestiques en sont un exemple. La bande millimétrique notamment, de 57GHz à 67GHz, est utilisé pour contenir les exigences des communications sans fils très haut-débit, néanmoins, la couverture de ces systèmes wireless est limitée en intérieur (indoor) essentiellement à une seule pièce, à la fois du fait de l’atténuation forte de l’atmosphèr
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7

Tao, Zhi. "Photodétection dans une large gamme de longueur d’onde : phototransistor CdSe QDs/RGO sur des nanofils de ZnO dans la gamme UV-Vis, PbS QDs avec un transistor organique C60 de type N imprimé dans la gamme proche IR." Thesis, Rennes 1, 2019. http://www.theses.fr/2019REN1S087.

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La détection de lumière dans une large gamme de longueur d’onde allant de l’UV au proche infrarouge est réalisée avec une sensibilité importante en utilisant l’effet d’amplification amené par un transistor à effet de champ et la capacité de détection dans une grande gamme de longueur d’onde amenée par des nanoparticules de CdSe et de PbS de diamètres différents. Dans une première partie, un FET utilisant une couche active de nanofils de ZnO est fabriqué. La détection de lumière UV-Vis est assurée en enrobant ces nanofils par un mélange de nanoparticules de CdSe et d’oxyde de graphène. L’oxyde
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8

Wang, Haila. "Photorécepteur monolithique intégrant un phototransistor et des transistors bipolaires à hétérojonction GaAlAs/GaAs pour transmission par fibre optique." Paris 11, 1986. http://www.theses.fr/1986PA112375.

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Ce travail présente la conception, la réalisation et la caractérisation d'un photorécepteur monolithique intégrant un phototransistor et des transistors bipolaires à hétérojonction GaAlAs/GaAs pour transmissions par fibre optique. Ce premier photorécepteur monolithique au monde intégrant des composants bipolaires à hétérojonction comprend un phototransistor, deux transistors à hétérojonction GaAlAs/GaAs et quatre résistances. La puissance minimum détectable de ce photorécepteur a été déduite des mesures du rapport signal sur bruit et de la bande passante: -30 dBm à 140 Mbit/s pour un taux d'er
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9

Wang, Haila. "Photorécepteur monolithique intégrant un phototransistor et des transistors bipolaires à hétérojonction GaAlAs/GaAs pour transmission par fibre optique." Grenoble 2 : ANRT, 1986. http://catalogue.bnf.fr/ark:/12148/cb37601788s.

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10

Helme, John Peter. "Analytical charge control modelling of the speed response of heterojunction bipolar phototransistor and PIN-diode/heterojunction bipolar transistor photoreceivers." Thesis, University of Sheffield, 2005. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.425610.

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11

THURET, JULIEN. "Phototransistor bipolaire a heterojonction inp/ingaas pour conversion optique/bande millimetrique dans les reseaux de distribution hybrides radio sur fibre." Paris 6, 1999. http://www.theses.fr/1999PA066676.

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L'objectif de ce travail consiste a optimiser les performances frequentielles du phototransistor bipolaire a heterojonction inp/ingaas ou pth, dans le domaine opto-electrique, en vue de son integration dans le reseau d'acces radio sur fibre, et plus precisement, au niveau de l'interface optique-radio. L'optimisation du composant a ete realisee simultanement sur la geometrie et sur la structure des couches epitaxiees. D'une part, on montre qu'il est necessaire de dissocier l'entree optique et le contact metallique de la base afin d'eviter les fuites de photocourant. Et d'autre part, on montre q
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12

Muller, Muriel. "Le phototransistor bipolaire InP/InGaAs comme mélangeur optique/électrique pour conversion vers la bande millimétrique dans le réseau d'accès radio sur fibre." Paris 6, 2002. http://www.theses.fr/2002PA066445.

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13

Pokorný, Aleš. "Bezkontaktní měření otáček ventilátoru." Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2010. http://www.nusl.cz/ntk/nusl-218589.

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This project is about design of contactless measuring ventilator - revolution counter. The counter serves to measurement of the speed of ventilator. The measurement is based on optical method of receiving the reflected laser beam. To measure and calculate use the revolution counter the microcontroller. This measured value is diplayed on LCD. After design follows experimental measurement.
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14

Patil, Prasanna Dnyaneshwar. "Investigation of Electronic and Opto-electronic Properties of Two-dimensional Layers (2D) of Copper Indium Selenide Field Effect Transistors." OpenSIUC, 2017. https://opensiuc.lib.siu.edu/theses/2206.

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Investigations performed in order to understand the electronic and optoelectronic properties of field effect transistors based on few layers of 2D Copper Indium Selenide (CuIn7Se11) are reported. In general, field effect transistors (FETs), electric double layer field effect transistors (EDL-FETs), and photodetectors are crucial part of several electronics based applications such as tele-communication, bio-sensing, and opto-electronic industry. After the discovery of graphene, several 2D semiconductor materials like TMDs (MoS2, WS2, and MoSe2 etc.), group III-VI materials (InSe, GaSe, and SnS2
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15

Rangel-Sharp, Graham David. "Physical modelling of travelling wave heterojunction phototransistors." Thesis, University of Leeds, 2005. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.421449.

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16

Ang, Hwee Ngoh. "Modelling and characterisation of 2-terminal heterojunction phototransistors." Thesis, University of Surrey, 2005. http://epubs.surrey.ac.uk/843728/.

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A Heterojunction Phototransitor (HPT) is an attractive high-speed photodetector for optical communications, as it can provide high gain and high power. It can also be used to generate millimetre-wave signals using optical heterodyne for radio astronomy and wireless broad-band communications. Edge illuminated 2-terminal HPTs (2T-HPTs) integrated with an optical waveguide are designed and characterised. A small signal model is developed and it simulates the 2T-HPT frequency responses with good accuracy and supplements the measurement to determine its gain and cut-off frequency. This overcomes th
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17

Khan, Hassan. "Spectral response modelling and analysis of heterojunction bipolar phototransistors." Thesis, University of Manchester, 2010. https://www.research.manchester.ac.uk/portal/en/theses/spectral-response-modelling-and-analysis-of-heterojunctionbipolar-phototransistors(06ed86d6-642a-4f69-bec3-ce3eb1bcbbc5).html.

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The optoelectronics industry continues to demand improved materials, devices and systems for the generation, transmission, detection, amplification and processing of optical signals. Heterojunction phototransistors (HPTs), in recent years, have attracted considerable interest for optical detection due to their intrinsic gain, low noise performance, high-frequency operation and process and the device layer compatibility with heterojunction bipolar transistors for high-speed optoelectronic monolithic microwave/millimetre-wave integrated circuit (OEMMIC) photoreceivers. A key performance paramete
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18

Rossi, Leonardo. "Flexible oxide thin film transistors: fabrication and photoresponse." Master's thesis, Alma Mater Studiorum - Università di Bologna, 2017. http://amslaurea.unibo.it/14542/.

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Gli ossidi amorfi semiconduttori (AOS) sono nuovi candidati per l’elettronica flessibile e su grandi aree: grazie ai loro legami prevalentemente ionici hanno una mobilità relativamente alta (µ > 10cm^2/Vs) anche nella fase amorfa. Transistor a film sottile (TFT) basati sugli AOS saranno quindi più performanti di tecnologie a base di a-Si e più economici di quelle a base di silicio policristallino. Essendo amorfi, possono essere depositati a basse temperature e su substrati polimerici, caratteristica chiave per l’elettronica flessibile e su grandi aree. Per questa tesi, diversi TFT sono stati
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19

Rosales, Marc. "Study of SiGe HPT for radio over fiber applications." Thesis, Paris Est, 2014. http://www.theses.fr/2014PEST1101/document.

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Ce travail de thèse présente le développement de phototransistors bipolaires à hétérojonction (HPT) SiGe/Si mis en œuvre dans une technologie de processus 80GHz SiGe bipolaire pour des applications de transmission Radio-sur-Fibre. Le cas particuliers d'un réseau domestique sans fil à infrastructure optique est considéré pour lequel le critère de coût est prépondérant. Le fonctionnement des ce HPT SiGe/Si est étudié sous une longueur d'onde optique de 850 nm en exploitant des fibres optique multimode (MMF) suffisantes pour les besoins de bande passante dans un environnement de réseau domestique
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20

Wasala, Milinda. "ELECTRONIC AND OPTO-ELECTRONIC TRANSPORT PROPERTIES OF FEW LAYER INDIUM SELENIDE FETS." OpenSIUC, 2019. https://opensiuc.lib.siu.edu/dissertations/1704.

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Layered Van der Waals solids, due to their highly anisotropic structure as well as their availability in mono, few and multi-layer form constitute a perfect playground, where a variety of possibility in structural variation as well as functionalities are expected. This potentially gives rise to a library of unique and fascinating 2D materials systems. These systems appear to demonstrate some spectacular variety of fundamental physics as well as indicate that some of these systems can be beneficial for several niche applications directly or indirectly resulting from their electrical and optic
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Ng, Wai Keng. "High power performance of InP/InGaAs HBTs and evanescently coupled waveguide phototransistors." Thesis, University of Sheffield, 2004. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.419624.

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22

Mikkelsen, Markus, and Gustav Svanfors. "Mätning av LCD-bildskärmars responstid och latens : Measurement of LCD displays response time and input lag." Thesis, Linnéuniversitetet, Institutionen för fysik och elektroteknik (IFE), 2013. http://urn.kb.se/resolve?urn=urn:nbn:se:lnu:diva-26555.

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Examensarbetet har utförts i samarbete med företaget LVI (Low Vision International) som tillverkar elektroniska hjälpmedel för synskadade. LVI utvärderar vid jämna mellanrum nya LCD-bildskärmar för deras produkter. LVI behöver metoder samt utrustning för att mäta bildskärmars responstid och latens. Både responstiden och latensen ger fördröjningar vilket t.ex. leder till att bilden blir oskarp, rörliga föremål får en svans efter sig eller att lju- det kommer före bilden. I detta arbete utförs en grundlig förstudie som behandlar bild- skärmars responstid och latens samt ge
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23

Viana, Carlos Alberto Araújo. "Injected phototransistor oscillator." Master's thesis, 2010. http://hdl.handle.net/10216/59249.

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Viana, Carlos Alberto Araújo. "Injected phototransistor oscillator." Dissertação, 2010. http://hdl.handle.net/10216/59249.

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WU, MENG-CANG, and 吳孟倉. "Amorphous Si:H/SiC:H superlattice phototransistor." Thesis, 1987. http://ndltd.ncl.edu.tw/handle/09361085744546054964.

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HAUNG, REUI-CHING, and 黃瑞欽. "Investigation of MgZnO-based Phototransistor." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/37605248695085177711.

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碩士<br>逢甲大學<br>電子工程學系<br>105<br>In this thesis, we study the deposition of magnesium oxide (MgxZn1-xO) active layer and alumina oxide layer on fluorine-doped tin oxide glass substrate, which made bottom gate structure. We use magnesium oxide as the active layer, and aluminum as the source and drain contact electrodes, fluorine-doped tin oxide as the bottom gate. The active layer and the oxide layer are produced by Ultrasonic Spray Pyrolysis Deposition (USPD) under normal pressure, and the contact electrode is made by thermal evaporation coater in high vacuum chamber. In order to detect the lat
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ZHANG, GUAN-GUN, and 張冠群. "The amorphous Si:H/SiC:H heterojunction phototransistor." Thesis, 1986. http://ndltd.ncl.edu.tw/handle/99221080862046451558.

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28

Chang, Ming-Chung, and 張明全. "Study of Polycrystalline Silicon Photodiode and Phototransistor." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/90688153491736131172.

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碩士<br>國立臺灣科技大學<br>電子工程系<br>97<br>In recent years, the commercial market for optoelectronic integrated circuits (OEICs) is expanding at rapid rate. It is necessary that a photodetector fabrication technique of high responsivity and high-speed performance is required for scale-down and cost-reduction concerns. Hence there has been a remarkable advance in both the physics and processing technologies of polycrystalline silicon. Their significant properties, such as the low-cost and the mass-producability of large-area growth on glass substrate, have attracted much attention as a new optoelectroni
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Chen, Che-Hao, and 陳哲豪. "Study of Structural Design of Phototransistor Devices." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/15204998297271602127.

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碩士<br>國立臺灣科技大學<br>電子工程系<br>96<br>The commercial market for optoelectronic integrated circuits (OEIC’s) is expanding at rapid rate. It is necessary that a photodetector fabrication technique of high responsivity and high-speed performance is required for scale-down and cost-reduction concerns. In this thesis, phototransistors are studied by simulation. The conventional phototransistor and photodiode are discussed first. We find that the conventional phototransistor has a good responsivity but lower speed performance. The condition of the conventional photodiode is directly opposite to the c
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Zhang, Yanfeng. "Nano-Crystalline &Amorphous Silicon PhotoTransistor Performance Analysis." Thesis, 2009. http://hdl.handle.net/10012/4586.

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In this thesis, we compared electrical performance and stability of a novel nanocrystalline Si (nc-Si) thin film phototransistor (TFT) phototransistor and a regular amorphous silicon (a-Si:H) TFT phototransistor for large area imaging applications. The electrical performance parameters of nc-Si TFT phototransistor were extracted from the electrical (current-voltage) testing in dark and under illumination. The field-effect mobility is found to be around 1.2 cm2V-1s-1, the threshold voltage around 3.9V and the sub-threshold voltage slope around 0.47V/Dec. Optical properties of nc-Si TFT phototra
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Lin, An-Hung, and 林安宏. "Three-Terminal Heterojunction Phototransistor and Optoelectronic-Circuit Application." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/73292832431897610217.

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碩士<br>國立臺灣海洋大學<br>電機工程學系<br>92<br>In this thesis, the model and characteristics of Heterojunction PhotoTransistor (HPT) is investigated. Both Gummel-plot and common-emitter configurations are employed to characterize HPT’s performances and to clearly demonstrate what difference between a voltage-biased and a current-biased HPT. The performances of the voltage- and current-source biased HPTs were also compared to the results from a newly proposed HPT model and related circuit with good agreement found. Although an independent voltage source pushes HBT’s operating point to a higher current level
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WANG, XIN-MIN, and 王新民. "The fabrication of In0.53 Ga0.47 as hetero-junction phototransistor." Thesis, 1987. http://ndltd.ncl.edu.tw/handle/08169157177777457788.

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Hsiao, Chin-Chiang, and 蕭金鎗. "High Efficiency of Two-dimensional Material-based Heterojunction Phototransistor." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/65792119370584616211.

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碩士<br>國立交通大學<br>材料科學與工程學系奈米科技碩博士班<br>104<br>In this thesis, combining two dimensional material-based (Graphene or MoS2) with conventional Si-based photo sensors, photodiode or phototransistor, are demonstrated and well examined successfully. We provide low leakage (nA), high conversion capability of optical-to-electrical characteristic, directly photo voltage output in graphene/n-Si photodiode without peripheral complex circuit like CMOS image sensor, and ultrahigh current gain of 11,583 of graphene-based heterojunction transistor. In the graphene-based photodiode, few-layer graphene with opti
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Chang, Yin-Lun, and 張尹倫. "Fabrication and Characterization of Waveguided Ge Quantum Dots Phototransistor." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/4y8z22.

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碩士<br>國立交通大學<br>電子研究所<br>106<br>In this thesis, we fabricated a heterostructure of Ge Quantum Dots/SiO2/SiGe in the channel of a MOSFET in a single oxidation step. Applying the buried oxide layer of SOI substrate and the 2-D tapered Si3N4 waveguide as the cladding and core layer for butt-coupling, respectively. For normal incidence optimal transmission, we chose ITO as the gate electrode. In other words, we demonstrated a waveguided phototransistor which can be measured either by normal incidence or lateral incidence, the absorption layer consists of Ge QDs and SiGe shell . We controlled the g
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HU, ZHONG-YOU, and 胡仲攸. "The fabrication of InGaAsP/InP heterojunction phototransistor by LPE method." Thesis, 1988. http://ndltd.ncl.edu.tw/handle/71794200427732995702.

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Chang, Yih-Ren, and 張益仁. "Surface Oxidation Doping Effect on High Performance Indium Selenide Phototransistor." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/qvdw8v.

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碩士<br>國立臺灣大學<br>材料科學與工程學研究所<br>105<br>Indium selenide (InSe) is one of the member of III-VI groups metal chalcogenide family, which also belongs to two-dimensional (2D) semiconductors. Similar to other 2D materials, InSe crystals are also a layered material with each layer composed of four covalently bonded atoms in form of Se–In–In–Se. Each InSe quadruple layer has a honeycomb shape lattice and bonds with each other by van der Waals interactions as the layer spacing d is about 0.8nm. In previous researches on bulk form InSe, it has been reported that InSe exhibits a small electron effective m
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Chen, Wei-Tien, and 陳威鈿. "Investigation of Low Power Supply Heterojunction Bipolar Transistor and Phototransistor." Thesis, 2003. http://ndltd.ncl.edu.tw/handle/06704722433832729493.

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碩士<br>國立海洋大學<br>電機工程學系<br>91<br>Direct-current characteristics of the composite-emitter heterojunction bipolar transistor (CEHBT’s) having a composite emitter consisting of a 0.04-μm In0.5Ga0.5P bulk layer and a 0.06-μm Al0.45Ga0.55As/GaAs digital graded superlattice (DGSL) were investigated. In order to study the effect of DGSL-emitter layer, a compared AlGaAs-passivated CEHBT having an InGaP/AlGaAs composite-emitter (formed of a 0.04-μm In0.5Ga0.5P and a 0.06-μm Al0.45Ga0.55As bulk layer) and a conventional InGaP-passivated SHBT having an InGaP emitter (a 0.07μm In0.5Ga0.5P bulk layer)
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Tzou, Chen-Yang, and 鄒振洋. "An ultra-fast organic two-terminal phototransistor with vertical topology." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/retx3p.

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碩士<br>國立臺灣大學<br>物理學研究所<br>106<br>This study presents a novel concept of an organic two-terminal phototransistor structure. The transistor effect is realized by the functional integration of a resistive random access memory and an organic bulk heterojunction solar cell forming a tandem structure. The organic solar cell efficiently harvests photon energy and generates photocurrent, and the RRAM acts as a switchable resistor. Compared with conventional phototransistors, our new design possesses several intriguing features, including ultra-fast photoresponse time, controllable photocurrent, and al
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Wu, Tsung-Che, and 吳宗哲. "Preliminary experimental results of integrated GaN-based LED and phototransistor." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/ednd7j.

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碩士<br>國立臺灣科技大學<br>電子工程系<br>107<br>This paper used commercial GaN LED wafers by using silicon diffusion process. Three components of light-emitting diode, p-i-n structured photodetector and n-p-i-n structured phototransistor on the same wafer. The characteristics of light-emitting diodes are measured. The characteristics of two photodetectors included dark current, external quantum efficiency, responsivity under different bias voltages, and response time. First, the measurement results of the light-emitting diode. In the electrical measurement, the turn on voltage of the light-emitting diode is
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Jing-XiangShi and 施景祥. "Optical Fiber Coupled Phototransistor Fabricated in V-groove Structures on Silicon." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/nrx558.

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Yuyang, Tsai, and 蔡育揚. "A New Phototransistor: Integrating A Poly-silicon/Graphene Photodiode with An MOSFET." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/byj534.

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Wu, Cheng-Yu, and 吳正宇. "The Design of SiGe -Based Phototransistor and Integrating Circuits for Optical Communication." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/73199976546800508434.

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碩士<br>國立臺灣科技大學<br>電子工程系<br>97<br>This thesis studies integrated circuits that are related to the system of optical communication. It includes light-emitting device, light-receiving device, transimpedance amplifier(TIA), voltage-controllator oscillator (VCO), and clock and data recovery(CDR) circuit. In the first part, the design of optical receving and light emitting devices are presented using the process of TSMC’s 0.35μm SiGe 3P3M. The effects of emitter area on the light-emitting and light-receving characteristics are presented. In the second part, the design of TIA is presented using the
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Shih, Yi-Siang, and 施逸翔. "Air-Stable and High-Performance MoS2 Phototransistor by Self-Encapsulated Photoactive Material." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/39218066168592900380.

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碩士<br>國立臺灣大學<br>物理研究所<br>103<br>Crystals of MoS2 are composed of vertically stacked, weakly interacting layers held together by van der Waals interactions. MoS2 is a material, which has a bandgap. In contrast to graphene, which does not have a bandgap in its pristine form, MoS2-based device can achieve low dark current and high photoresponsivity. MoS2 can tune its bandgap by modifying its layer thickness. Bulk MoS2 has an indirect bandgap of 1.2eV crosses over to a direct bandgap of ∼1.8 eV when the thickness is down to monolayer. Compared with classical semiconductors, MoS2 can offer addition
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Yuan, Shuo-Huang, and 袁碩璜. "Effect of Metallic Nanoparticles on the Photodetection Behavior of an Organic Phototransistor." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/80296590667441792309.

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博士<br>國立中央大學<br>電機工程學系<br>104<br>In this thesis, we investigated the photodetection capability of organic phototransistors (OPTs) with metallic nanoparticles decoration. The main features encompass as follows. First, we investigated the effect of Al2O3/PMMA stack dielectrics on OTFT performance in terms of leakage and depletion capacitance. Compared to the OTFTs with single-layer PMMA, OTFTs with stacked-dielectrics exhibit better leakage-current blocking ability and a lower depletion capacitance thanks to better pentacene crystallinity. Secondly, we investigated the photo energy transfer effi
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Shen, Yen-yu, and 沈彥宇. "Characterization of Germanium Quantum Dots Phototransistor for Near Infrared Photodetection and Amplification." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/59315495528892879772.

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碩士<br>國立中央大學<br>電機工程學系<br>102<br>This thesis focuses on the application of Germanium quantum dots (QDs) phototransistor for the near infrared photodetection and amplification. The main characteristics of the Ge QD phototransistor is based on the framed structure of typical metal-oxide-semiconductor field-effect transistor (MOSFET), incorporating 50 nm Ge QDs embedded in gate dielectrics. The heterostructures of 50 nm Ge QDs/SiO2/Si were formed using the selective oxidation of poly-SiGe pillar, incorporating Ge QDs array into the gate dielectrics of MOSFET, which is a compatible approach with p
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Chiang, Chen-Tin, and 蔣承庭. "Fabrication and Characterization of 50 nm Ge-QD/SiGe Shell NMOS Phototransistor." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/7pw4xq.

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碩士<br>國立交通大學<br>電子研究所<br>107<br>In this thesis, we used the technology of Germanium quantum dots in a single process forming to fabricated a heterostructure of Ge Quantum Dots/SiO2/SiGe shell in the channel of a MOSFET. In order to optimize the forming of poly-SiGe pillar, we tune the etcher not only to get the adaptive etching rate and more vertical profile, but also to further control the distribution of Ge quantum dots. The 3-4 nm-thickness SiO2 between Ge QD and SiGe shell acts the gate oxide, solved the lattice mismatch at interface of Si-Ge. For normal incidence optimal transmission and
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Huang, San-Yat, and 黃三岳. "A Study of Using a-SiGe:H Phototransistor as An Optically Readable Hydrogen Sensor." Thesis, 1998. http://ndltd.ncl.edu.tw/handle/67765908369011845309.

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Shih, Fu-Ciang, and 施富強. "Utilize Graphene Nano-clusters in Amorphous Oxide Semiconductor Phototransistor for Visible Light Detection." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/75950889405833231205.

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碩士<br>國立中興大學<br>光電工程研究所<br>104<br>The last fifteen years have witnessed a phenomenal growth in thin film transistor (TFT) technology, driven by an insatiable demand for larger and larger displays. Indeed the flat panel display has been making rapid progress in providing interactive information retrieval as opposed to one-way information delivery. To keep up with this paradigm shift, the display must integrate in situ sensors to detect the external signal and yet maintain the thin and large area form factor, high resolution at low cost. In order to meet these myriad of technological challenges
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Li, Shang-Hsuan, and 李尚軒. "Enhancing the photocurrent of pentacene-based organic phototransistor with stacked(PMMA/SiO2) dielectric layers." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/3g4666.

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碩士<br>義守大學<br>電子工程學系<br>102<br>In this study, sol-gel method SiO2 film is coated onto PMMA to act as a stacked gate dielectric layer for fabricating an organic thin film transistor (OTFT) on the ITO glass substrate. The electrical characteristics of OTFTs are discussed by varying the thickness of SiO2 and pentacene active layer. The IDS of OTFT can be modified by illuminating, which indicates the pentacene-based OTFT can be an organic phototransistor. The sol-gel SiO2 has a high dielectric constant of 9.8. The SiO2 is spin-coated onto PMMA and shows a smooth surface morphology by AFM measureme
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XU, ZHI-HAO, and 許志豪. "Study on hetero-structure phototransistor and liquid phase epitaxy of In0.49Ga0.51P on GaAs substrate." Thesis, 1993. http://ndltd.ncl.edu.tw/handle/41649542034670384196.

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