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Journal articles on the topic 'Phototransistor'

Author: Grafiati

Published: 4 June 2021

Last updated: 26 July 2025

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1

Bansal, Malti, and Raaghav Raj Maiya. "Phototransistor: The Story So Far." December 2020 2, no. 4 (2020): 202–10. http://dx.doi.org/10.36548/jei.2020.4.002.

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The research paper prospects the theory of phototransistor ranging from the history of the device to its application in the real world. The research paper deep dives into the characteristics of the phototransistor while discussing its dependence on bias drive, bias voltage, and illumination intensity. The research paper includes a comparative study between the various types of phototransistors based on optical gain, spectral range, and efficiency. It also concludes the best illumination method for the phototransistor based on the optical gain parameter.

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Hou, Shuo Ben, Per Erik Hellström, Carl Mikael Zetterling, and Mikael Östling. "High Temperature High Current Gain IC Compatible 4H-SiC Phototransistor." Materials Science Forum 963 (July 2019): 832–36. http://dx.doi.org/10.4028/www.scientific.net/msf.963.832.

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This paper presents our in-house fabricated 4H-SiC n-p-n phototransistors. The wafer mapping of the phototransistor on two wafers shows a mean maximum forward current gain (βFmax) of 100 at 25 °C. The phototransistor with the highest βFmax of 113 has been characterized from room temperature to 500 °C. βFmax drops to 51 at 400 °C and remains the same at 500 °C. The photocurrent gain of the phototransistor is 3.9 at 25 °C and increases to 14 at 500 °C under the 365 nm UV light with the optical power of 0.31 mW. The processing of the phototransistor is same to our 4H-SiC-based bipolar integrated

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3

Jihane, Ouchrif, Baghdad Abdennaceur, Sahel Aïcha, and Badri Abdelmajid. "High-performance InP/InGaAs heterojunction bipolar phototransistors for optoelectronic applications." High-performance InP/InGaAs heterojunction bipolar phototransistors for optoelectronic applications 32, no. 1 (2023): 80–89. https://doi.org/10.11591/ijeecs.v32.i1.pp80-89.

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Phototransistors are attractive devices for applications in optical fiber telecommunication systems. They are used for the detection of optical signals and the amplification of these signals. This paper presents an investigation of how the technological parameters of indium phosphide (InP)/indium gallium arsenide (InGaAs) heterojunction bipolar phototransistor can impact its responsivity at two wavelengths, 1310 nm and 1550 nm. Based on the results of this investigation, we proposed optimized structures for the studied phototransistor. In this work, we used the software technology computer aid

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Ouchrif, Jihane, Abdennaceur Baghdad, Aicha Sahel, and Abdelmajid Badri. "High-performance InP/InGaAs heterojunction bipolar phototransistors for optoelectronic applications." Indonesian Journal of Electrical Engineering and Computer Science 32, no. 1 (2023): 80. http://dx.doi.org/10.11591/ijeecs.v32.i1.pp80-89.

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<span>Phototransistors are attractive devices for applications in optical fiber telecommunication systems. They are used for the detection of optical signals and the amplification of these signals. This paper presents an investigation of how the technological parameters of indium phosphide (InP)/indium gallium arsenide (InGaAs) heterojunction bipolar phototransistor can impact its responsivity at two wavelengths, 1310 nm and 1550 nm. Based on the results of this investigation, we proposed optimized structures for the studied phototransistor. In this work, we used the software technology

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5

Rosales, Marc D., François Duport, Julien Schiellein, Jean-Luc Polleux, Catherine Algani, and Christian Rumelhard. "Opto-microwave experimental mapping of SiGe/Si phototransistors at 850 nm." International Journal of Microwave and Wireless Technologies 1, no. 6 (2009): 469–73. http://dx.doi.org/10.1017/s1759078709990584.

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This paper presents measurement results providing the mapping of the opto-microwave transfer function performed on an SiGe microwave heterojunction phototransistor (HPT). This measurements will be used to extract a guideline for designing phototransistors. A mapping of the HPT's gain in low frequency helps to estimate the shape of the optical beam used for the measurement. The study also focuses on the cutoff frequency mapping of the device in phototransistor mode. Finally, these results are used to determine the general optimization rules in the SiGe HPTs design.

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Debesay, Thomas H., and Sam-Shajing Sun. "Phototransistors Based on A Lightly Doped P3HT." MRS Advances 5, no. 37-38 (2020): 1975–82. http://dx.doi.org/10.1557/adv.2020.306.

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AbstractOrganic/Polymeric Semiconductor (OSC) based devices have been under extensive study for the past three decades due to their intrinsic potential advantages such as lightweight, mechanical flexibility, biocompatibility, low toxicity, abundant material availability, low cost of processing, etc. A phototransistor incorporates the properties and functions of a transistor and photodetector. In this study, a phototransistor based on a donor/acceptor (D/A) pair (photo-doping) was studied and demonstrated. Unlike in organic photovoltaics (OPV) where 1:1 proportion by mass of the donor:acceptor

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Bai, Yun, Cheng Zhan Li, Hua Jun Shen, Yi Dan Tang, and Xin Yu Liu. "Structural Optimization of 4H-SiC BJT for Ultraviolet Detection with High Optical Gain." Materials Science Forum 858 (May 2016): 1036–39. http://dx.doi.org/10.4028/www.scientific.net/msf.858.1036.

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The 4H-SiC n-p-n BJT for ultraviolet detection with high optical gain is proposed and optimized in this paper. The effect of structural parameters of 4H-SiC phototransistor on the performance of the detectors is simulated and the effect mechanism is analyzed. The simulation results show that the 4H-SiC phototransistors detect UV light with a response wavelength below 380 nm. It is suggested that the base parameters are important to the responsivity of the 4H-SiC BJT. With optimized parameters the 4H-SiC UV phototransistor exhibits peak responsivity as high as 4617 A/W corresponding to a quantu

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8

Saminan, Saminan, Fitria Silviana, and Soni Prayogi. "A Low-cost demonstration kit for determination of the active region of x-ray detectors using phototransistors." Journal of Physics: Theories and Applications 8, no. 1 (2024): 98. https://doi.org/10.20961/jphystheor-appl.v8i1.86746.

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<span lang="EN-US">This research develops a low-cost demonstration kit that aims to facilitate understanding of the concept of determining the active region of an X-ray detector using a phototransistor. This demonstration kit provides a practical and effective tool for illustrating the basic principles of X-ray detection, focusing on the phototransistor as the main component. The research method includes designing an electronic circuit capable of converting changes in light received by a phototransistor into an electrical signal that can be measured. The interaction of X-rays with matter

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9

Kim, Yu Bin, Jun Hyung Jeong, Min Ho Park, et al. "Low-Power Phototransistor with Enhanced Visible-Light Photoresponse and Electrical Performances Using an IGZO/IZO Heterostructure." Materials 17, no. 3 (2024): 677. http://dx.doi.org/10.3390/ma17030677.

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In this study, we demonstrated the effective separation of charge carriers within the IGZO/IZO heterostructure by incorporating IZO. We have chosen IGZO for its high mobility and excellent on–off switching behavior in the front channel of our oxide–oxide heterostructure. Similarly, for an additional oxide layer, we have selected IZO due to its outstanding electrical properties. The optimized optoelectronic characteristics of the IGZO/IZO phototransistors were identified by adjusting the ratio of In:Zn in the IZO layer. As a result, the most remarkable traits were observed at the ratio of In:Zn

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10

ABEDIN, M. NURUL, TAMER F. REFAAT, OLEG V. SULIMA та UPENDRA N. SINGH. "RECENT DEVELOPMENT OF SB-BASED PHOTOTRANSISTORS IN THE 0.9- TO 2.2-μM WAVELENGTH RANGE FOR APPLICATIONS TO LASER REMOTE SENSING". International Journal of High Speed Electronics and Systems 16, № 02 (2006): 567–82. http://dx.doi.org/10.1142/s0129156406003850.

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We have investigated commercially available photodiodes and also recent developed Sb -based phototransistors in order to compare their performances for applications to laser remote sensing. A custom-designed phototransistor in the 0.9- to 2.2-μm wavelength range has been developed at AstroPower and characterized at NASA Langley's Detector Characterization Laboratory. The phototransistor's performance greatly exceeds the previously reported results at this wavelength range in the literature. The detector testing included spectral response, dark current and noise measurements. Spectral response

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Vygranenko, Y., A. Sazonov, M. Fernandes, M. Vieira, and A. Nathan. "Thin-Film Phototransistor with nc-Si:H/a-Si:H Bilayer Channel." MRS Proceedings 1426 (2012): 205–10. http://dx.doi.org/10.1557/opl.2012.1180.

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ABSTRACTThere is significant interest in optical sensors whose fabrication process is fully compatible with existing flat panel display thin film transistor (TFT) technology. Here, we report a field-effect phototransistor with a channel comprising a thin nanocrystalline silicon (nc-Si:H) transport layer and a thicker hydrogenated amorphous silicon (a-Si:H) absorption layer. The implementation of nc-Si:H layer improves device stability in comparison with a-Si:H phototransistors, resulting in reduced threshold voltage shift. Semiconductor and dielectric layers were deposited by radio-frequency p

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Yang, Chen, Yangyang Xie, Lei Zheng, et al. "High Performance Phototransistor Based on 0D-CsPbBr3/2D-MoS2 Heterostructure with Gate Tunable Photo-Response." Nanomaterials 15, no. 4 (2025): 307. https://doi.org/10.3390/nano15040307.

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Monolayer MoS2 has been widely researched in high performance phototransistors for its high carrier mobility and strong photoelectric conversion ability. However, some defects in MoS2, such as vacancies or impurities, provide more possibilities for carrier recombination; thus, restricting the formation of photocurrents and resulting in decreased responsiveness. Herein, all-inorganic CsPbBr3 perovskite quantum dots (QDs) with high photoelectric conversion efficiency and light absorption coefficients are introduced to enhance the responsivity of a 2D MoS2 phototransistor. The CsPbBr3/MoS2 hetero

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13

Yoo, Hyukjoon, Kyungmoon Kwak, I. Sak Lee, et al. "Enhancement of visible light detection for indium–gallium–zinc oxide-based transparent phototransistor via application of porous-structured polytetrafluoroethylene." Applied Physics Letters 121, no. 14 (2022): 141105. http://dx.doi.org/10.1063/5.0107623.

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In this paper, a transparent phototransistor with improved visible light detection by applying sub gap states engineering and a porous polytetrafluoroethylene (PTFE) layer on the indium–gallium–zinc oxide (IGZO) thin film is introduced. The porous PTFE film was sputtered with the selective etching process through an oxygen plasma process after removing nickel nanoparticles dispersed by a magnetic field with a liftoff process. The photoresponse characteristics of porous PTFE/IGZO (PPI) phototransistors were tested with various thicknesses of PTFE (15–75; 15 nm steps). The PPI phototransistor wi

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Cao, Yong, Yongshuai Ge, Xin Sha, et al. "Sensitive direct x-ray detectors based on the In–Ga–Zn–O/perovskite heterojunction phototransistor." Flexible and Printed Electronics 7, no. 1 (2022): 014013. http://dx.doi.org/10.1088/2058-8585/ac5b8e.

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Abstract Direct x-ray detectors are essential in many applications including medical tomography, security inspection, nondestructive testing, crystallography and astronomy. Despite the rapid advances in recent years, the currently available direct x-ray detectors are still limited by the insufficient photon-to-charge conversion, compromising the detection sensitivity, ease of fabrication, cost and flexibility. Here we demonstrate a device concept of heterojunction phototransistor with high internal-gain effect to realize the sensitive x-ray direct detection. Specifically, the heterojunction ph

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Shen, Tao, Xingchen Lu, Lei Xu, Zhichao Li, and Junjie Qi. "Synthesis of Monolayer MoS2 Films and Tuning Its Photoelectric Properties via Interface Engineering." Nanoscience and Nanotechnology Letters 12, no. 2 (2020): 141–49. http://dx.doi.org/10.1166/nnl.2020.3097.

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Two-dimensional (2D) materials have received considerable attention for their applications in nextgeneration optoelectronics but are limited by the synthesis of large-area films and the challenges in device optimization. In this study, a uniform MoS2 monolayer film was synthesized by a simple chemical vapor deposition (CVD) method. Phototransistors based on the resulting MoS2 films were fabricated and their photoelectric properties were compared with that of a device with synthesized triangular MoS2 sheets. The results show that the photoresponsivity of the film-based phototransistor is 1180 m

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16

Golubin, Sergey A., Alexei N. Lomanov, Vladimir S. Nikitin, and Valery M. Komarov. "Experimental Research into the Influence of Photodetector Types on Characteristics of Optical Mini-Sticks of Unified Human- Machine Interfaces." Volume 26, Number 4, 2018, no. 04-2018 (December 2018): 137–42. http://dx.doi.org/10.33383/2018-054.

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The article provides the results of the experimental research into the influence of different types of photo detectors of digital optical ministicks on their transformation function – the useful ministick signal as a function of the ministick control lever deviation value. The set problem was solved using experimental research methods. Circuits with a photo diode (PIN photodiode PD15– 21B/TR8 manufactured by Everlight company) and circuits with a phototransistor (phototransistor KP2012P3C manufactured by Kingbright company) were studied. An automated test bench was used for the research. Th

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17

Vincze, Tomas, Michal Micjan, Juraj Nevrela, Martin Donoval, and Martin Weis. "Photoresponse Dimensionality of Organic Field-Effect Transistor." Materials 14, no. 23 (2021): 7465. http://dx.doi.org/10.3390/ma14237465.

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Organic field-effect transistors have been envisioned for advanced photodetectors because the organic semiconductors provide unique absorption characteristics, low-cost fabrication, or compatibility with flexible substrates. However, the response time of organic phototransistors still does not reach the required application level. Here, we report the photoresponse of copper phthalocyanine phototransistor in a steady state and under pulsed illumination. The detailed analysis based on the random walk among a field of traps was used to evaluate the dimensionality of electron transport in a device

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18

Lin, Bosi, Rundong Hu, Tong Chen, and Hang Zhou. "33‐3: High Responsivity and Low Dark Current Phototransistor Based on Perovskite/InZnO Heterostructure." SID Symposium Digest of Technical Papers 55, S1 (2024): 275–77. http://dx.doi.org/10.1002/sdtp.17057.

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Amorphous metal oxide semiconductors (AOS), especially indium‐gallium‐zinc oxide (IGZO), have been studied and applied in sensing, display and other industrial fields, including phototransistors, because of their outstanding electronic properties. [1] [2] However, due to its much low visible light response and limited mobility, IGZO could not match the rapidly developing application needs of phototransistor. [3] The construction of photo‐TFT (thin film transistor) with better electronical performance and stronger light response has become a key issue.[4] Therefore, indium‐zinc oxide (IZO) with

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Khorramshahi, Fatemeh, and Arash Takshi. "Microfluidic Approach for Lead Halide Perovskite Flexible Phototransistors." Electronics 9, no. 11 (2020): 1852. http://dx.doi.org/10.3390/electronics9111852.

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Lead halide perovskites possess outstanding optical characteristics that can be employed in the fabrication of phototransistors. However, due to low current modulation at room temperature, sensitivity to the ambient environment, lack of patterning techniques and low carrier mobility of polycrystalline form, investigation in perovskite phototransistors has been limited to rigid substrates such as silicon and glass to improve the film quality. Here, we report on room temperature current modulation in a methylammonium lead iodide perovskite (MAPbI3) flexible transistor made by an extremely cheap

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Campajola, Marcello, Paolo Di Meo, Francesco Di Capua, Paolo Branchini, and Alberto Aloisio. "Dynamic Photoresponse of a DNTT Organic Phototransistor." Sensors 23, no. 5 (2023): 2386. http://dx.doi.org/10.3390/s23052386.

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The photosensitivity, responsivity, and signal-to-noise ratio of organic phototransistors depend on the timing characteristics of light pulses. However, in the literature, such figures of merit (FoM) are typically extracted in stationary conditions, very often from IV curves taken under constant light exposure. In this work, we studied the most relevant FoM of a DNTT-based organic phototransistor as a function of the timing parameters of light pulses, to assess the device suitability for real-time applications. The dynamic response to light pulse bursts at ~470 nm (close to the DNTT absorption

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Gaberl, Wolfgang, Plamen Kostov, Michael Hofbauer, and Horst Zimmermann. "Phototransistor noise model based on noise measurements on PNP PIN phototransistors." Optical and Quantum Electronics 46, no. 10 (2014): 1269–75. http://dx.doi.org/10.1007/s11082-013-9839-1.

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Shin, Hyunji, Jaehoon Park, and Jong Sun Choi. "Illumination Effect on Electrical Characteristics of Poly(3-hexylthiophene): TIPS-Pentacene Blend Thin-Film Transistor." Journal of Nanoscience and Nanotechnology 21, no. 7 (2021): 3829–34. http://dx.doi.org/10.1166/jnn.2021.19222.

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Organic phototransistors capable of absorbing in the visible light spectrum without color filters are the best alternatives to conventional inorganic phototransistors. In this study, the effect of illumination on the electrical characteristics of a solution-processed poly(3-hexylthiophene): 6,13-bis(triisopropylsilylethynyl) pentacene-blend thin-film transistor (TFT) was investigated. The wavelengths of the irradiated light were determined from the absorbance spectrum of the blended film and changes in the transistor’s electrical characteristics were explained in relation to the electrical and

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23

Kusminarto and Ramacos Fadela. "An X-Ray Detector Using a Fluorescent Material ZnS:Ag Attached on a Phototransistor in Darlington Configuration." Applied Mechanics and Materials 771 (July 2015): 21–24. http://dx.doi.org/10.4028/www.scientific.net/amm.771.21.

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X-rays have been widely used in medical imaging system. CT Scan is one of the important diagnostic equipments in medical field that uses X-rays as a probe. In the latest CT-Scan generation an array of X-ray detector in a gantry is employed. Solid state detector and gas filled detector are currently used. These type of detector have relatively large in physical size. This influenses the size of the machine as well as its performance. In order to obtain an X-ray detector in a small size a phototransistor was exploited. The phototransistor was attached on a fluoroscent screen and arranged in Darl

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Zhu, Junqiang, Xiaofei Yue, Jiajun Chen, et al. "Ultrasensitive Phototransistor Based on Laser-Induced P-Type Doped WSe2/MoS2 Van der Waals Heterojunction." Applied Sciences 13, no. 10 (2023): 6024. http://dx.doi.org/10.3390/app13106024.

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Out-of-plane p-n heterojunctions based on two-dimensional layered materials (2DLMs) with unusual physical characteristics are attracting extensive research attention for their application as photodetectors. However, the present fabrication method based on 2DLMs produces out-of-plane p-n homojunction devices with low photoresponsivity and detectivity. This work reports an ultrasensitive phototransistor based on a laser-induced p-doped WSe2/MoS2 van der Waals heterojunction. The laser treatment is used for p-doping WSe2 nanoflakes using high work function WOx. Then, an n-type MoS2 nanoflake is t

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Chen, Yu, Hee Ra Kim, Yu Jin Ahn, and Jung Bog Kim. "Characteristic curves of the photodiode and phototransistor with Arduino." Physics Education 58, no. 5 (2023): 055018. http://dx.doi.org/10.1088/1361-6552/ace8e8.

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Abstract A simple circuit with Arduino for determining characteristic curves of the photodiode and phototransistor is described. The experimental results show that the measured I–V curves of the photodiode and phototransistor are consistent with the datasheet.

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Huang, Biqin, Igor Altfeder, and Ian Appelbaum. "Spin-valve phototransistor." Applied Physics Letters 90, no. 5 (2007): 052503. http://dx.doi.org/10.1063/1.2436715.

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Zukawa, Takehiro, Shigeki Naka, Hiroyuki Okada, and Hiroyoshi Onnagawa. "Organic heterojunction phototransistor." Journal of Applied Physics 91, no. 3 (2002): 1171–74. http://dx.doi.org/10.1063/1.1429767.

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Matzen, W. T., R. A. Hawthorne, and W. T. Kilian. "Radiation-hardened phototransistor." IEEE Transactions on Nuclear Science 38, no. 6 (1991): 1323–28. http://dx.doi.org/10.1109/23.124112.

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Saragi, Tobat P. I., Kristian Onken, Irina Suske, Thomas Fuhrmann-Lieker, and Josef Salbeck. "Ambipolar organic phototransistor." Optical Materials 29, no. 11 (2007): 1332–37. http://dx.doi.org/10.1016/j.optmat.2006.07.001.

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Xi, Wang, Li Na, Pu Hongbin, Yang Yingxiang, Hu Jichao, and Xu Jianning. "Numerical Investigation on Hole-Injection Characteristics of NiO/SiC Heterojunction." Journal of Physics: Conference Series 2331, no. 1 (2022): 012002. http://dx.doi.org/10.1088/1742-6596/2331/1/012002.

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Abstract Numerical investigation on hole-injection characteristics of NiO/SiC heterojunction is carried out in this paper. Theory analysis and numerical simulation both indicate the excellent hole-injection characteristic of p-NiO/n-SiC heterojunction. The pn junction diode and pnp phototransistor are constructed and simulated to evaluate hole-injection characteristics p-NiO/n-SiC heterojunction. The results indicate that the p-NiO/n-SiC heterojunction shows great potential advantage in enhancing current gain of pnp phototransistor. By using NiO/SiC heterojunction as the emitter junction, the

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Silva, Jonatas V., Luiz C. Gonçalves Filho, and Luiz A. P. Santos. "An optocoupler-based method for dosimetry in low energy X-ray beams." EPJ Web of Conferences 288 (2023): 09002. http://dx.doi.org/10.1051/epjconf/202328809002.

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Semiconductor electronic devices have been used as detector in X-ray beams for decades, and the principle of operation is based on measuring the electrical current generated while such a device is under the ionizing radiation. Some devices that can be used are: photodiode, phototransistor, bipolar junction transistor, MOSFET, among others. In this work, a method based on an optocoupler device is presented for radiation dose real-time measurement in low-energy X-ray beam, which is used in medical radiology. Such an optoelectronic device has an LED and a phototransistor inside it, in general, fo

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Yang, Chih-Chiang, Kuan-Yu Chen, Wei-Sheng Yeh, Yan-Kuin Su, and Zi-Hao Wang. "Ultraviolet Photodetection Application in Magnesium Indium Oxide Thin Film Transistors via Co-Sputtering Deposition." Applied Sciences 10, no. 15 (2020): 5128. http://dx.doi.org/10.3390/app10155128.

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A magnesium-doped indium oxide (In2O3:Mg) ultraviolet (UV) thin film phototransistor was fabricated via cosputtering of MgO and In2O3. Three samples with different sputtering power values of In2O3 ranging from 40 to 60 W, namely, sample A with 40 W, sample B with 50 W, and sample C with 60 W, were used in this study. Results confirmed that oxygen vacancy concentration evidently indicates indium content. The experimental results showed that responsivities of samples, defined as the ratio of photocurrent under illumination per input power, increase from 0.0086 to 2.6 A/W. Rejection ratios were 1

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Yang, C. P., S. P. Chang, S. J. Chang, et al. "Properties of Ga–Zn–O Ultraviolet Phototransistors Using Radio-Frequency Magnetron Co-Sputtering Method." Nanoscience and Nanotechnology Letters 10, no. 3 (2018): 396–402. http://dx.doi.org/10.1166/nnl.2018.2627.

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In this paper, we report on the fabrication of Ga-doped zinc oxide (GZO) channel ultraviolet (UV) phototransistors. Under dark measurement conditions, it is found that the values of μFE, VT, SS, and ION/IOFF of the fabricated device are 25.8 cm2/Vs, 0.35 V, 0.2 V/decade, and 1 × 105, respectively. Unpassivated devices have a negative VTH shift with positive bias stress, which results from the interactions of the moisture present in air with the GZO channel during the fabrication procedure and/or storage. Furthermore, it is found that the deep-UV to visible-rejection ratio can reach 1.1 × 102 f

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Lastya, Hari Anna, Yuwaldi Away, Tarmizi Tarmizi, et al. "Performance Comparison Between LDR and Phototransistor Sensor for Dual-Axis Sun Tracker Sensor Based on Tetrahedron Geometry." International Conference on Information Science and Technology Innovation (ICoSTEC) 2, no. 1 (2023): 127–33. http://dx.doi.org/10.35842/icostec.v2i1.50.

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Solar energy is optimally obtained by solar cells when the solar cells are perpendicular to the sun's position, so a sun tracker is needed to track the sun precisely. This research compares the electrical power used in two system dual-axis sun trackers with a tetrahedron geometry that uses an LDR sensor with a phototransistor sensor. The two sun trackers are built identically and the experimental data with the servo movement and the solar cell load are carried out side by side. The servo motor controls with Proportional Integral Derivative (PID) algorithm controls the movement of the dual-axis

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Ryzhii, Victor. "Infrared Hot-Electron Phototransistor." Japanese Journal of Applied Physics 33, Part 1, No.1A (1994): 78–82. http://dx.doi.org/10.1143/jjap.33.78.

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Ünlü, M. S., K. Kishino, J. I. Chyi, J. Reed, L. Arsenault, and H. Morkoç. "Wavelength demultiplexing heterojunction phototransistor." Electronics Letters 26, no. 22 (1990): 1857. http://dx.doi.org/10.1049/el:19901194.

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Tang, Ke, Linjun Wang, Jian Huang, et al. "Freestanding diamond films phototransistor." Surface and Coatings Technology 228 (August 2013): S401—S403. http://dx.doi.org/10.1016/j.surfcoat.2012.05.059.

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Sha, Xin, Yong Cao, Lingqiang Meng, et al. "Near-infrared photonic artificial synapses based on organic heterojunction phototransistors." Applied Physics Letters 120, no. 15 (2022): 151103. http://dx.doi.org/10.1063/5.0083925.

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Photonic synapses provide fast response, high bandwidth, and less crosstalk in neuromorphic computation as well as simulation of visual perception systems. Herein, phototransistor-based photonic synapses that can be triggered by near-infrared light are reported. The artificial synapse is based on organic heterojunction phototransistors comprising the organic polymer semiconductor PDPPBTT and inorganic SnO2. The organic semiconducting polymer PDPPBTT serves as the near-infrared light absorbing materials and transistor channel, whereas SnO2 serves as the charge trapping materials. By adopting th

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Arrasyid, Faisal. "Analysis of the Effect of Adding PNP Phototransistors on Fiber Optic Systems." Brilliance: Research of Artificial Intelligence 2, no. 1 (2022): 22–25. http://dx.doi.org/10.47709/brilliance.v2i1.1540.

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This study analyzes the performance of PNP phototransistors made of Gallium Arsenide (GaAs) and Silicon (Si). Based on the analysis for gallium arsenide and silicon PNP phototransistors, the emitter current at the output is greater than the photon current at the incident. With?= 1017?3;?= 1016?3and?= 1019?3;?= 1016?3The input current for GaAs material is 1.6865×10?7 ., respectively?and 8.0331×10?6A. With the addition of internal gain on the GaAs material, namely; common-base internal gain (?)= 0.9991; 0.8974 and the common-emitter internal gain(?)=1125; 8.7488, then each output current is 1.89

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Orletsky, Ivan, Mariia Ilashchuk, Sergiy Nichy, and Bohdan Nichy. "Development of n-TiN/p-CdTe/n-CdTe Phototransistors for Use in a Networked Digital Light Sensor." Security of Infocommunication Systems and Internet of Things 2, no. 2 (2024): 02008. https://doi.org/10.31861/sisiot2024.2.02008.

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In this work, the mode of production by reactive magnetron sputtering of n-TiN/p-CdTe/n-CdTe heterostructures, which have the properties of a phototransistor with an unconnected (floating) base, is investigated. It is shown that in the structure of n-TiN/p-CdTe/n-CdTe at reverse voltage at the collector junction of p-CdTe/n-CdTe under conditions of irradiation close to АМ1 from the side of the n-TiN emitter, the phenomenon of amplification of the collector photocurrent by the direct current of the directly switched on is observed of the n-TiN/p-CdTe heterojunction. A forward voltage is applied

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Cho, An‐Thung, Feng‐yun Yang, Young Zhang, et al. "26‐1: Embedded a‐Si Photo‐Transistor Sensors Integration in Remote Optical Touch‐input Panel Using Four‐Mask Process Architecture Technology." SID Symposium Digest of Technical Papers 55, no. 1 (2024): 321–24. http://dx.doi.org/10.1002/sdtp.17520.

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An optical type touch‐input flat panel is designed. The driving system is based on the passive pixel sensor (PPS) array with amorphous silicon (a‐Si) TFT technology. The embedded sensing structure of the optical sensor is using the a‐Si TFT phototransistor and four‐mask process architecture technology. This paper presents a primary optical pixel sensor circuit that utilizes hydrogenated amorphous silicon photo‐transistor sensor. The a‐Si TFT phototransistor sensor is high reliability by using Multi‐N+ layer in the a‐Si TFT structure.

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Paul Inbaraj, Christy Roshini, Roshan Jesus Mathew, Golam Haider, et al. "Ultra-high performance flexible piezopotential gated In1−xSnxSe phototransistor." Nanoscale 10, no. 39 (2018): 18642–50. http://dx.doi.org/10.1039/c8nr05234d.

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Shin, Hyunji, Dongwook Kim, Jaehoon Park, and Dae Yu Kim. "Improving Photosensitivity and Transparency in Organic Phototransistor with Blending Insulating Polymers." Micromachines 14, no. 3 (2023): 620. http://dx.doi.org/10.3390/mi14030620.

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Organic phototransistors exhibit great promise for use in a wide range of technological applications due to their flexibility, low cost, and low-temperature processability. However, their low transparency due to visible light absorption has hindered their adoption in next-generation transparent electronics. For this reason, the present study sought to develop a highly sensitive organic phototransistor with greater transparency and significantly higher light sensitivity in the visible and UVA regions without deterioration in its electrical properties. An organic blended thin-film transistor (TF

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Lee, Dong Keun, Jong Hyuk Ahn, Jong Bin An, Sung Min Rho, Kyung Min Kim, and Hyun Jae Kim. "97‐4: Late‐News Paper: Visible Light Detection Enhancement of Indium‐Gallium‐Zinc Oxide Phototransistor with a Formation of p‐n Junction Using PEDOT:PSS Absorption Layer." SID Symposium Digest of Technical Papers 55, no. 1 (2024): 1254–57. http://dx.doi.org/10.1002/sdtp.17771.

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In this paper, an indium‐gallium‐zinc oxide (IGZO) based phototransistor with an electrohydrodynamic (EHD) jet printed poly (3,4‐ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) absorption layer has been developed for the absorption of visible light. The PEDOT:PSS absorption layerforms a p‐n junction with IGZO, enhancing the photoresponse through selective carrier transfer of photogenerated carriers. As a result, the proposed phototransistor exhibits improved optoelectronic characteristics such as photoresponsivity of 8.40 × 102 A/W, photosensitivity of 1.12 × 107, detectivity of 8.05

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Strobel, Carsten, Carlos Alvarado Chavarin, Martin Knaut, et al. "p-Type Schottky Contacts for Graphene Adjustable-Barrier Phototransistors." Nanomaterials 14, no. 13 (2024): 1140. http://dx.doi.org/10.3390/nano14131140.

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The graphene adjustable-barriers phototransistor is an attractive novel device for potential high speed and high responsivity dual-band photodetection. In this device, graphene is embedded between the semiconductors silicon and germanium. Both n-type and p-type Schottky contacts between graphene and the semiconductors are required for this device. While n-type Schottky contacts are widely investigated, reports about p-type Schottky contacts between graphene and the two involved semiconductors are scarce. In this study, we demonstrate a p-type Schottky contact between graphene and p-germanium.

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Jang, Won-Ho, Hyun-Seop Kim, Myoung-Jin Kang, Chun-Hyung Cho, and Ho-Young Cha. "Recessed AlGaN/GaN UV Phototransistor." JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE 19, no. 2 (2019): 184–89. http://dx.doi.org/10.5573/jsts.2019.19.2.184.

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Kishima, Koichiro, Nick K. Hon, and Bahram Jalali. "Floating body CMOS phototransistor memory." IEICE Electronics Express 7, no. 24 (2010): 1790–95. http://dx.doi.org/10.1587/elex.7.1790.

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Jie, Jiansheng, Wei Deng, Xiujuan Zhang, and Xiaohong Zhang. "A phototransistor with visual adaptation." Nature Electronics 4, no. 7 (2021): 460–61. http://dx.doi.org/10.1038/s41928-021-00618-5.

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KIM, Sunmi, Yusuke KAJIHARA, and Susumu KOMIYAMA. "Charge-Sensitive Infrared Phototransistor (CSIP)." Review of Laser Engineering 45, no. 12 (2017): 763. http://dx.doi.org/10.2184/lsj.45.12_763.

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Liu, Yu, Wen Huang, Xiawa Wang, et al. "A Hybrid Phototransistor Neuromorphic Synapse." IEEE Journal of the Electron Devices Society 7 (2019): 13–17. http://dx.doi.org/10.1109/jeds.2018.2874334.

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