Relevant bibliographies by topics / Piezoelectric Zinc Oxide Thin Films

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  2. Dissertations / Theses
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Academic literature on the topic 'Piezoelectric Zinc Oxide Thin Films'

Author: Grafiati
Published: 4 June 2021
Last updated: 6 September 2023

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Journal articles on the topic "Piezoelectric Zinc Oxide Thin Films"

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Sidek, Fatini, Anis Nurashikin Nordin, and Raihan Othman. "Optimization of Zinc Oxide Thin Films for Silicon Surface Acoustic Wave Resonator Applications." Advanced Materials Research 518-523 (May 2012): 3772–79. http://dx.doi.org/10.4028/www.scientific.net/amr.518-523.3772.

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High quality ZnO thin films are required to produce CMOS SAW resonators operating with low losses and high Q. This work intends to develop high performance CMOS SAW resonators through optimization of both the quality of the ZnO and the design of the SAW resonator. Zinc oxide was chosen for this work as the piezoelectric material due to its superior acoustic propagation properties and compatibility with integrated circuit fabrication techniques. ZnO has demonstrated good performance characteristics for a variety of piezoelectric devices. For optimization of the quality of the deposited ZnO thin film, different RF-sputtering conditions will be used to investigate which condition produces the best piezoelectric quality of the ZnO thin film. The experiments were carried using Taguchi optimization method, which studies a large number of variables with a small number of experiments.
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Kräuter, Marianne, Taher Abu Ali, Barbara Stadlober, Roland Resel, Katrin Unger, and Anna Maria Coclite. "Tuning the Porosity of Piezoelectric Zinc Oxide Thin Films Obtained from Molecular Layer-Deposited “Zincones”." Materials 15, no. 19 (September 30, 2022): 6786. http://dx.doi.org/10.3390/ma15196786.

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Porous zinc oxide (ZnO) thin films were synthesized via the calcination of molecular layer-deposited (MLD) “zincone” layers. The effect of the MLD process temperature (110 °C, 125 °C) and of the calcination temperature (340 °C, 400 °C, 500 °C) on the chemical, morphological, and crystallographic properties of the resulting ZnO was thoroughly investigated. Spectroscopic ellipsometry reveals that the thickness of the calcinated layers depends on the MLD temperature, resulting in 38–43% and 52–56% of remaining thickness for the 110 °C and 125 °C samples, respectively. Ellipsometric porosimetry shows that the open porosity of the ZnO thin films depends on the calcination temperature as well as on the MLD process temperature. The maximum open porosity of ZnO derived from zincone deposited at 110 °C ranges from 14.5% to 24%, rising with increasing calcination temperature. Compared with the 110 °C samples, the ZnO obtained from 125 °C zincone yields a higher porosity for low calcination temperatures, namely 18% for calcination at 340 °C; and up to 24% for calcination at 500 °C. Additionally, the porous ZnO thin films were subjected to piezoelectric measurements. The piezoelectric coefficient, d33, was determined to be 2.8 pC/N, demonstrating the potential of the porous ZnO as an, e.g., piezoelectric sensor or energy harvester.
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Abinaya, M., K. M. Dhanisha, M. Manoj Cristopher, P. Deepak Raj, K. Jeyadheepan, and M. Sridharan. "Reactive DC Magnetron Sputtered ZnO Thin Films for Piezoelectric Application." International Journal of Nanoscience 17, no. 03 (May 21, 2018): 1760047. http://dx.doi.org/10.1142/s0219581x1760047x.

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Zinc oxide (ZnO) films have been sputter coated over glass substrates at different cathode powers. Influence of cathode power on physical characteristics of ZnO samples was analyzed using X-ray diffractometer (XRD), field emission-scanning electron microscopy (FE-SEM), UV-Visible spectrophotometer and four-point probe (FPP) method. XRD patterns exhibited [Formula: see text]-axis-oriented ZnO and enhanced crystallinity with increase in cathode power due to the increase in adatom mobility. Uniformly arranged spherical grains were observed from FE-SEM images. The grain size increased from 25 to 40[Formula: see text]nm with increase in power. All samples exhibited high electrical resistance (G[Formula: see text]) which is compatible for piezoelectric application.
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Saito, Eduardo, E. F. Antunes, Matheus Pianassola, Fernando Henrique Christovan, João Paulo Barros Machado, Evaldo Jose Corat, and Vladimir J. Trava-Airoldi. "Electrodeposition of Zinc Oxide on Graphene Tips Electrochemically Exfoliated and O2-Plasma Treated." Advanced Materials Research 975 (July 2014): 179–83. http://dx.doi.org/10.4028/www.scientific.net/amr.975.179.

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Zinc oxide (ZnO) presents several applications as piezoelectric transducers, photosensors, solar cells, electrochemical sensors, etc. Electrodeposition of zinc oxide (ZnO) thin films from aqueous solution of zinc nitrate has been deposited in graphenated low cost pencil graphite. The electrochemical graphene production at the tips was performed in a low cost DC source using concentrated sulfonitric solution. The tips were expanded in hydrogen plasma and treated by oxygen plasma to enhance its hydrophilicity. The posterior ZnO electrodeposition was highly efficient and the graphene functionalization contributes to overall electrochemical deposition mechanism.
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Sharma, Pallavi, Zeynel Guler, and Nathan Jackson. "Development and characterization of confocal sputtered piezoelectric zinc oxide thin film." Vacuum 184 (February 2021): 109930. http://dx.doi.org/10.1016/j.vacuum.2020.109930.

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Laurenti, M., S. Stassi, M. Lorenzoni, M. Fontana, G. Canavese, V. Cauda, and C. F. Pirri. "Evaluation of the piezoelectric properties and voltage generation of flexible zinc oxide thin films." Nanotechnology 26, no. 21 (May 6, 2015): 215704. http://dx.doi.org/10.1088/0957-4484/26/21/215704.

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Abu Ali, Taher, Julian Pilz, Philipp Schäffner, Markus Kratzer, Christian Teichert, Barbara Stadlober, and Anna Maria Coclite. "Piezoelectric Properties of Zinc Oxide Thin Films Grown by Plasma‐Enhanced Atomic Layer Deposition." physica status solidi (a) 217, no. 21 (September 22, 2020): 2000319. http://dx.doi.org/10.1002/pssa.202000319.

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Srivastava, Vinay Kumar, Jaspreet Singh, Parlad Kumar, Sataypal Singh Arora, Satinder Pal Singh, and Surinder Singh. "A comparative study of structural, mechanical & electrical properties of ZnO and AlN thin films for MEMS based piezoelectric sensors." Materials Research Express 9, no. 2 (February 1, 2022): 026402. http://dx.doi.org/10.1088/2053-1591/ac4341.

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Abstract In this work, a comparative study has been carried out to compare the relative performance of ZnO (Zinc Oxide) and AlN (Aluminum Nitride) thin films for their application in piezoelectric sensors. The thin films material properties are being characterized using various material characterization techniques such as SEM, XRD, and Nanoindentation. Further the MIM (Metal-Insulator-Metal) based devices have been fabricated with piezoelectric films sandwiched between Al electrodes. The devices have been evaluated for mechanical and electrical performances. The natural frequency of the devices recorded as 46.8 kHz (ZnO) and 40.8 kHz (AlN). The average nominal capacitance of the MIM structure is measured as ∼98 pF and ∼120 pF where as corresponding dissipation factor obtained as ∼0.03 and ∼0.0005 respectively for ZnO and AlN devices. The repeatability investigation carried out on the sample devices for up to 90 days and the output has been monitored. The result showed that the AlN devices exhibit better output stability compared to ZnO devices.
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Li, Wei, Yunqi Cao, and Nelson Sepúlveda. "Thin Film Piezoelectric Nanogenerator Based on (100)-Oriented Nanocrystalline AlN Grown by Pulsed Laser Deposition at Room Temperature." Micromachines 14, no. 1 (December 30, 2022): 99. http://dx.doi.org/10.3390/mi14010099.

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In wearable or implantable biomedical devices that typically rely on battery power for diagnostics or operation, the development of flexible piezoelectric nanogenerators (NGs) that enable mechanical-to-electrical energy harvesting is finding promising applications. Here, we present the construction of a flexible piezoelectric nanogenerator using a thin film of room temperature deposited nanocrystalline aluminium nitride (AlN). On a thin layer of aluminium (Al), the AlN thin film was grown using pulsed laser deposition (PLD). The room temperature grown AlN film was composed of crystalline columnar grains oriented in the (100)-direction, as revealed in images from transmission electron microscopy (TEM) and X-ray diffraction (XRD). Fundamental characterization of the AlN thin film by piezoresponse force microscopy (PFM) indicated that its electro-mechanical energy conversion metrics were comparable to those of c-axis oriented AlN and zinc oxide (ZnO) thin films. Additionally, the AlN-based flexible piezoelectric NG was encapsulated in polyimide to further strengthen its mechanical robustness and protect it from some corrosive chemicals.
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TAHIR, MUHAMMAD BILAL, HASNAIN JAVAD, KHALID NADEEM, and A. MAJID. "ZnO THIN FILMS: RECENT DEVELOPMENT, FUTURE PERSPECTIVES AND APPLICATIONS FOR DYE SENSITIZED SOLAR CELL." Surface Review and Letters 25, no. 07 (October 2018): 1930001. http://dx.doi.org/10.1142/s0218625x19300016.

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Dye sensitized solar cells (DSSCs) provide promisingly, organic–inorganic, clean hybrid, cost effective and efficient molecular solar cell devices. Due to their distinct and multifunctional qualities, zinc oxide (ZnO) nanostructures are promising materials used to create photoanodes for DSSCs due to the availability of larger surface area than bulk sheet substance, effectual light-dispersing centers, and when mixed with titanium dioxide they produce a core–shell formation that diminishes the coalition rate and provide direct charge. Moreover, ZnO thin sheets have been broadly observed due of its potential application in various fields i.e. piezoelectric, photovoltaic, pyroelectric and optoelectronic utilization. This review studies the recent advances in the fabrication of zinc oxide-based photovoltaics; synthesis of ZnO nanostructures with variable morphologies including thin sheets, nanotubes, nanorods, nanoflowers, nanofibers and factors that control the growth and morphologies of these nanospecies and part of crystallographic planes for the fabrication of various zinc oxide nanoshapes. In the next part of this paper, numerous fabrication routes — doped and undoped ZnO thin films — are discussed and different parameters of photovoltaics are investigated, e.g. efficiency pre and post annealing temperatures, fill factors spinning speed and coating time, additives, nature of precursor which impacts on morphological and optical parameters of these sheets. In short, this review is dedicated to the ZnO photoanode, its properties, issues related to ZnO photoanode, various improvement approaches, fabrication methods successfully trialled so far followed by market potential of the DSSC technology, conclusion and recommendations
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Dissertations / Theses on the topic "Piezoelectric Zinc Oxide Thin Films"

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Yoon, Sang Hoon Kim Dong Joo. "Growth and characterization of ZNO and PZT films for micromachined acoustic wave devices." Auburn, Ala, 2009. http://hdl.handle.net/10415/1719.

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Olzick, Adam. "Deposition, Characterization, and Fabrication of a Zinc Oxide Piezoelectric Thin Film Microspeaker Using DC Reactive Sputtering." DigitalCommons@CalPoly, 2012. https://digitalcommons.calpoly.edu/theses/767.

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A piezoelectric microspeaker device that could be used in a variety of acoustic applications was designed and fabricated using a thin film ZnO layer that was reactively DC sputtered onto a single crystalline n-type silicon substrate. When tested the microspeaker did not produce sound due to complications in the etching process, the thickness of the diaphragms, and clamping effects. Instead, a characterization approach was taken and the structural, optical, electrical, and piezoelectric properties of the ZnO were investigated. Scanning electron microscopy, x-ray diffraction, and atomic force microscopy were utilized to discover the ZnO’s structural properties. Using the XRD and SEM, the as-sputtered ZnO films were found to have highly c-axis oriented columnar crystals. Optical properties were determined from the reflectance spectrums obtained from a Filmetrics F20 reflectometer and were used to determine the film thickness, the optical constants, and the optical band gap of the ZnO thin films. Using a four-point probe, the as-sputtered ZnO films were found to be highly resistive and insulative, mainly due to voided growth boundaries between the crystals. To improve electrical conductivity and piezoelectric response, ZnO samples were annealed at varying temperatures in a nitrogen environment. The annealing process successfully increased the electrical conductivity and piezoelectric properties of the films. The local piezoelectric properties of the ZnO were discovered with an Asylum MFP-3D and a piezoresponse force microscopy (PFM) technique called DART-PFM. The ZnO films that were sputtered with 70 watts and an argon to oxygen gas ratio of 2:1 were found to have the highest d33 piezoelectric coefficients. The ZnO sample that was annealed at 600°C for 30 minutes had the highest overall d33 value of 4.0 pm/V, which means that the 600°C annealed ZnO films would have the best chance of making a functional microspeaker.
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Iqbal, Abid. "The Sputtering and Characterization of C-Axis Oriented Aluminium Nitride Thin Films On Top Of Cubic Silicon Carbide-On-Silicon Substrates for Piezoelectric Applications." Thesis, Griffith University, 2017. http://hdl.handle.net/10072/365840.

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The growth of micro-scale wireless electronics is increasing significantly because of their miniaturisation and low power consumption. These devices currently draw power from batteries or chemical fuel cells. Their limited life-spans prompt active research to find an alternative solution by harvesting ambient energy from the environment. Numerous sources are available such as solar, thermoelectric, acoustic, and mechanical vibrations. Among them, mechanical vibration is perhaps the most practical to power these wireless electronic devices via piezoelectric transduction. Three most common piezoelectric materials are Lead zirconate titanate (PZT), zinc oxide (ZnO) and aluminum nitride (AlN). AlN is preferred over ZnO and PZT for several reasons. Chiefly among them is because it has the highest electromechanical coupling along the c-axis of wurzite AlN for longitudinal deformation. This thesis investigates the sputtering of c-axis oriented AlN on top of cubic-silicon carbide-on-silicon (3C-SiC-on-Si) substrates for piezoelectric applications. The 3C-SiC buffer layer was used to reduce the lattice mismatch and thermal expansion coefficient between AlN and Si. In the first part of the research, RF sputtering was utilised for depositing AlN. The low growth rate of RF sputtering prompted the switch to DC sputtering. The DC sputtering suffered from electrical arching problems, which were addressed by gradually decreasing the sputtering pressure. However, the system had the limitation of 1200 W of maximum power.
Thesis (PhD Doctorate)
Doctor of Philosophy (PhD)
Griffith School of Engineering
Science, Environment, Engineering and Technology
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Chawich, Juliana. "ZnO/GaAs-based acoustic waves microsensor for the detection of bacteria in complex liquid media." Thesis, Bourgogne Franche-Comté, 2019. http://www.theses.fr/2019UBFCD012/document.

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Cette thèse s’inscrit dans le cadre d’une cotutelle internationale entre l’Université de Bourgogne Franche-Comté en France et l’Université de Sherbrooke au Canada. Elle porte sur le développement d'un biocapteur miniature pour la détection et la quantification de bactéries dans des milieux liquides complexes. La bactérie visée est l’Escherichia coli (E. coli), régulièrement mise en cause dans des épidémies d'infections alimentaires, et parfois meurtrière.La géométrie du biocapteur consiste en une membrane en arséniure de gallium (GaAs) sur laquelle est déposé un film mince piézoélectrique d’oxyde de zinc (ZnO). L'apport du ZnO structuré en couche mince constitue un réel atout pour atteindre de meilleures performances du transducteur piézoélectrique et consécutivement une meilleure sensibilité de détection. Une paire d'électrodes déposée sur le film de ZnO permet de générer sous une tension sinusoïdale une onde acoustique se propageant dans le GaAs, à une fréquence donnée. La face arrière de la membrane, quant à elle, est fonctionnalisée avec une monocouche auto-assemblée (SAM) d'alkanethiols et des anticorps anti-E. coli, conférant la spécificité de la détection. Ainsi, le biocapteur bénéficie à la fois des technologies de microfabrication et de bio-fonctionnalisation du GaAs, déjà validées au sein de l’équipe de recherche, et des propriétés piézoélectriques prometteuses du ZnO, afin d’atteindre potentiellement une détection hautement sensible et spécifique de la bactérie d’intérêt. Le défi consiste à pouvoir détecter et quantifier cette bactérie à de très faibles concentrations dans un échantillon liquide et/ou biologique complexe.Les travaux de recherche ont en partie porté sur les dépôts et caractérisations de couches minces piézoélectriques de ZnO sur des substrats de GaAs. L’effet de l’orientation cristalline du GaAs ainsi que l’utilisation d’une couche intermédiaire de Platine entre le ZnO et le GaAs ont été étudiés par différentes techniques de caractérisation structurale (diffraction des rayons X, spectroscopie Raman, spectrométrie de masse à ionisation secondaire), topographique (microscopie à force atomique), optique (ellipsométrie) et électrique. Après la réalisation des contacts électriques, la membrane en GaAs a été usinée par gravure humide. Une fois fabriqué, le transducteur a été testé en air et en milieu liquide par des mesures électriques, afin de déterminer les fréquences de résonance pour les modes de cisaillement d’épaisseur. Un protocole de bio-fonctionnalisation de surface, validé au sein du laboratoire, a été appliqué à la face arrière du biocapteur pour l’ancrage des SAMs et des anticorps, tout en protégeant la face avant. De plus, les conditions de greffage d’anticorps en termes de concentration utilisée, pH et durée d’incubation, ont été étudiées, afin d’optimiser la capture de bactérie. Par ailleurs, l’impact du pH et de la conductivité de l’échantillon à tester sur la réponse du biocapteur a été déterminé. Les performances du biocapteur ont été évaluées par des tests de détection de la bactérie cible, E. coli, tout en corrélant les mesures électriques avec celles de fluorescence. Des tests de détection ont été réalisés en variant la concentration d’E. coli dans des milieux de complexité croissante. Différents types de contrôles ont été réalisés pour valider les critères de spécificité. En raison de sa petite taille, de son faible coût de fabrication et de sa réponse rapide, le biocapteur proposé pourrait être potentiellement utilisé dans les laboratoires de diagnostic clinique pour la détection d’E. coli
This thesis was conducted in the frame of an international collaboration between Université de Bourgogne Franche-Comté in France and Université de Sherbrooke in Canada. It addresses the development of a miniaturized biosensor for the detection and quantification of bacteria in complex liquid media. The targeted bacteria is Escherichia coli (E. coli), regularly implicated in outbreaks of foodborne infections, and sometimes fatal.The adopted geometry of the biosensor consists of a gallium arsenide (GaAs) membrane with a thin layer of piezoelectric zinc oxide (ZnO) on its front side. The contribution of ZnO structured in a thin film is a real asset to achieve better performances of the piezoelectric transducer and consecutively a better sensitivity of detection. A pair of electrodes deposited on the ZnO film allows the generation of an acoustic wave propagating in GaAs under a sinusoidal voltage, at a given frequency. The backside of the membrane is functionalized with a self-assembled monolayer (SAM) of alkanethiols and antibodies anti-E. coli, providing the specificity of detection. Thus, the biosensor benefits from the microfabrication and bio-functionalization technologies of GaAs, validated within the research team, and the promising piezoelectric properties of ZnO, to potentially achieve a highly sensitive and specific detection of the bacteria of interest. The challenge is to be able to detect and quantify these bacteria at very low concentrations in a complex liquid and/or biological sample.The research work partly focused on the deposition and characterization of piezoelectric ZnO thin films on GaAs substrates. The effect of the crystalline orientation of GaAs and the use of a titanium / platinum buffer layer between ZnO and GaAs were studied using different structural (X-ray diffraction, Raman spectroscopy, secondary ionization mass spectrometry), topographic (atomic force microscopy), optical (ellipsometry) and electrical characterizations. After the realization of the electrical contacts on top of the ZnO film, the GaAs membrane was micromachined using chemical wet etching. Once fabricated, the transducer was tested in air and liquid medium by electrical measurements, in order to determine the resonance frequencies for thickness shear mode. A protocol for surface bio-functionalization, validated in the laboratory, was applied to the back of the biosensor for anchoring SAMs and antibodies, while protecting the top side. Furthermore, different conditions of antibody grafting such as the concentration, pH and incubation time, were tested to optimize the immunocapture of bacteria. In addition, the impact of the pH and the conductivity of the solution to be tested on the response of the biosensor has been determined. The performances of the biosensor were evaluated by detection tests of the targeted bacteria, E. coli, while correlating electrical measurements with fluorescence microscopy. Detection tests were completed by varying the concentration of E. coli in environments of increasing complexity. Various types of controls were performed to validate the specificity criteria. Thanks to its small size, low cost of fabrication and rapid response, the proposed biosensor has the potential of being applied in clinical diagnostic laboratories for the detection of E. coli
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Yang, Zheng. "Doping in zinc oxide thin films." Diss., [Riverside, Calif.] : University of California, Riverside, 2009. http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&res_dat=xri:pqdiss&rft_dat=xri:pqdiss:3359913.

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Thesis (Ph. D.)--University of California, Riverside, 2009.
Includes abstract. Available via ProQuest Digital Dissertations. Title from first page of PDF file (viewed March 12, 2010). Includes bibliographical references. Also issued in print.
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Depaz, Michael. "Processing and characterization of zinc oxide thin films." [Tampa, Fla.] : University of South Florida, 2007. http://purl.fcla.edu/usf/dc/et/SFE0002235.

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Yang, Hung-Pao 1980. "A study of P-type zinc oxide thin films /." Thesis, McGill University, 2006. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=99550.

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In the past decade, p-type ZnO material has been investigated extensively. Its properties offer the potential for broad applications including the development of ultraviolet light emitting devices. Although n-type ZnO material is well known and studied for decades, the fabrication method and properties of p-type ZnO material are still to date not clearly understood.
In this report, reproducible p-type ZnO thin films sputtered on glass substrates are reported. On the same substrate, p-type ZnO film is local and surrounded by n-type ZnO regions. The thickness of the films is typically three microns after several hours of deposition by radio-frequency magnetron sputtering technique. Both p-type ZnO and n-type thin films are characterized by optical and electrical measurements at room temperature.
The crystal structure of p-type ZnO is examined by X-ray diffraction patterns. The X-ray diffraction patterns show that the material is polycrystalline and has (100) and (101) preferred orientation. Photoluminescence spectra of ZnO help to identify the energy levels in the material and spectra analysis reveals the presence of defects and dopants in the material. For p-type ZnO, the resistivity, the hole concentration and hole mobility are found to be 148.8 O-cm, 4.34 x 1018/cm3 and 1.72 x 10-2 cm2/V-sec respectively.
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Potter, D. "Zinc-based thin films for transparent conducting oxide applications." Thesis, University College London (University of London), 2018. http://discovery.ucl.ac.uk/10041886/.

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This thesis describes the synthesis of zinc-based transparent conducting oxide (TCO) thin films, as sustainable alternatives to commercial TCOs. There are two main aims to this work. The first is the discovery of suitable TCO materials, which involves finding the optimum optoelectronic properties for applications in photovoltaic devices. The second aim is investigating the scale up of aerosol assisted chemical vapour deposition (AACVD), which is the technique used to deposit the majority of the films in this work. The films deposited in this work were characterised by X-ray diffraction (XRD) to find the crystal structures, X-ray photoelectron spectroscopy (XPS) to find the elemental compositions, scanning electron microscopy (SEM) to analyse the surface morphologies, UV/vis spectroscopy to find the optical properties, and by Hall effect measurements to find the electrical properties. Aluminium, gallium, indium, silicon, and fluorine have been examined as dopants for ZnO, in various combinations, and at different concentrations. The films were generally found to have high transparency, and electrical properties that approached those of industrial TCO materials. The merits of the films are particularly promising, when considering the relative ease through which the films were synthesised. Additionally, the effect of varying the solvent used to make up the precursor solution is investigated. The deposition of ZnSb2O6 thin films via spin coating is also discussed. This thesis also details an investigation into the scale-up of AACVD. An aerosol transport study was performed, whereby the aerosol was transported prior to deposition. It was found that a considerable amount of aerosol was condensing within the tubing, prior to reaching the reactor. Additionally, increasing the film growth rates was investigated by depositing FTO films using high concentrations in the precursor solution. Growth rates of approximately 2 μm min-1 were achieved, making the use of AACVD for commercial applications significantly more feasible.
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Min, Yongki 1965. "Properties and sensor performance of zinc oxide thin films." Thesis, Massachusetts Institute of Technology, 2003. http://hdl.handle.net/1721.1/17032.

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Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2003.
Includes bibliographical references (p. 144-152).
This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.
Reactively sputtered ZnO thin film gas sensors were fabricated onto Si wafers. The atmosphere dependent electrical response of the ZnO micro arrays was examined. The effects of processing conditions on the properties and sensor performance of ZnO films were investigated. Using AFM, SEM, XRD and WDS, the 02/Ar ratios during sputtering and Al dopant were found to control the property of ZnO films. Subsequent annealing at 700 C improved the sensor response of the films considerably although it had only minor effects on the microstructure. DC resistance, I-V curves and AC impedance were utilized to investigate the gas response of ZnO sensors. ZnO films prepared with high O2/Ar ratios showed better sensitivity to various gases, a feature believed to be related to their lower carrier density. Al doped ZnO showed measurable sensitivity even with lower resistance attributable to their porous microstructure. AC impedance identified two major components of the total resistance including Schottky barriers at the Pt-ZnO interfaces and a DC bias induced constriction resistance within the ZnO films. Time dependent drift in resistance of ZnO films has been observed. Without applied bias, the ZnO films showed a fast and a slow resistance change response when exposed to gases with varying oxygen partial pressure with both response components dependent on operating temperature. Even at the relatively low operating temperatures of these thin film sensors, bulk diffusion cannot be discounted. The oxygen partial pressure dependence of the sensor resistance and its corresponding activation energy were related to defect process controlling the reduction/oxidation behavior of the ZnO.
(cont.) In this study, time dependent DC bias effects on resistance drift were first discovered and characterized. The DC bias creates particularly high electric fields in these micro devices given that the spacing of the interdigited electrodes falls in the range of microns. The high electric field is believed to initiate ion migration and/or modulate grain boundary barrier heights, inducing resistance drift with time. Such DC bias resistance induced drift is expected to contribute to the instability of thin film micro array sensors designed for practical applications. Suggestions for stabilizing sensor response are provided.
by Yongki Min.
Ph.D.
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Choppali, Uma. "Low Temperature Polymeric Precursor Derived Zinc Oxide Thin Films." Thesis, University of North Texas, 2006. https://digital.library.unt.edu/ark:/67531/metadc5504/.

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Zinc oxide (ZnO) is a versatile environmentally benign II-VI direct wide band gap semiconductor with several technologically plausible applications such as transparent conducting oxide in flat panel and flexible displays. Hence, ZnO thin films have to be processed below the glass transition temperatures of polymeric substrates used in flexible displays. ZnO thin films were synthesized via aqueous polymeric precursor process by different metallic salt routes using ethylene glycol, glycerol, citric acid, and ethylene diamine tetraacetic acid (EDTA) as chelating agents. ZnO thin films, derived from ethylene glycol based polymeric precursor, exhibit flower-like morphology whereas thin films derived of other precursors illustrate crack free nanocrystalline films. ZnO thin films on sapphire substrates show an increase in preferential orientation along the (002) plane with increase in annealing temperature. The polymeric precursors have also been used in fabricating maskless patterned ZnO thin films in a single step using the commercial Maskless Mesoscale Materials Deposition system.
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Books on the topic "Piezoelectric Zinc Oxide Thin Films"

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C, Jagadish, and Pearton S. J, eds. Zinc oxide bulk, thin films and nanostructures: Processing, properties and applications. Amsterdam: Elsevier, 2006.

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M, Durbin Steven, Wenckstern Holger von, Allen Martin W, and Materials Research Society, eds. Zinc oxide and related materials--2009: Symposium held November 30-December 3, 2009, Boston, Massachusetts, USA. Warrendale, Pa: Materials Research Society, 2010.

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National Renewable Energy Laboratory (U.S.), ed. Amorphous indium-zinc-oxide transparent conductors for thin film PV: Preprint. Golden, CO: National Renewable Energy Laboratory, 2011.

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Ziaja, Jan. Cienkowarstwowe struktury metaliczne i tlenkowe: Właściwości, technologia, zastosowanie w elektrotechnice = Thin layer metallic and oxide structures : properties, technology, electrotechnics applications. Wrocław: Oficyna Wydawnicza Politechniki Wrocławskiej, 2012.

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Klaus, Ellmer, Klein Andreas Dr, and Rech Bernd, eds. Transparent conductive zinc oxide: Basics and applications in thin film solar cells. Berlin: Springer, 2008.

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M, Martino, ed. ZnO nanostructures deposited by laser ablation. Hauppauge, N.Y: Nova Science Publishers, 2009.

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Martino, M. ZnO nanostructures deposited by laser ablation. Hauppauge, N.Y: Nova Science Publishers, 2010.

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Martino, M. ZnO nanostructures deposited by laser ablation. Hauppauge, N.Y: Nova Science Publishers, 2010.

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Hüpkes, Jürgen. Untersuchung des reaktiven Sputterprozesses zur Herstellung von aluminiumdotierten Zinkoxide-Schichten für Silizium-Dünnschicht-solarzellen. Jülich: Forschungszentrum Jülich, Zentralbibliothek, 2006.

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ZnO bao mo zhi bei ji qi guang, dian xing neng yan jiu. Shanghai Shi: Shanghai da xue chu ban she, 2010.

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Book chapters on the topic "Piezoelectric Zinc Oxide Thin Films"

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Lorenz, M. "Pulsed Laser Deposition of ZnO-Based Thin Films." In Transparent Conductive Zinc Oxide, 303–57. Berlin, Heidelberg: Springer Berlin Heidelberg, 2008. http://dx.doi.org/10.1007/978-3-540-73612-7_7.

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Mamat, Mohamad Hafiz, and Mohamad Rusop. "Zinc Oxide Nanostructured Thin Films: Preparation and Characterization." In Advanced Structured Materials, 355–73. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/8611_2010_23.

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Mar, G. L., P. Y. Timbrell, and R. N. Lamb. "Formation of Zinc Oxide Thin Films by the Thermal Decomposition of Zinc Acetate." In Springer Proceedings in Physics, 177–92. Berlin, Heidelberg: Springer Berlin Heidelberg, 1993. http://dx.doi.org/10.1007/978-3-642-84933-6_15.

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Boussard, P., P. E. M. Siegbahn, and U. Wahlgren. "Cluster Models of Zinc Oxide Including Ionic and Covalent Effects." In Adsorption on Ordered Surfaces of Ionic Solids and Thin Films, 192–205. Berlin, Heidelberg: Springer Berlin Heidelberg, 1993. http://dx.doi.org/10.1007/978-3-642-78632-7_18.

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Nongthombam, Sumitra, and Bibhu Prasad Swain. "Chemical Bath Deposited Zinc Oxide Nanostructured Thin Films and Their Applications." In Materials Horizons: From Nature to Nanomaterials, 99–113. Singapore: Springer Singapore, 2022. http://dx.doi.org/10.1007/978-981-16-8391-6_6.

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Diao, Chien-Chen, Chia-Ching Wu, and Cheng-Fu Yang. "Crystalline Indium-Doped Zinc Oxide Thin Films Prepared by RF Magnetron Reactive Sputtering." In Lecture Notes in Electrical Engineering, 501–8. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-17314-6_64.

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Peng, Fang, Xiao Min Li, and Xiang Dong Gao. "Transparent and Compact Zinc Oxide Thin Films via Two-Step Electrodeposition from Aqueous Solution." In Key Engineering Materials, 2221–23. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-410-3.2221.

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Kim, Hee Joon, Dong Young Jang, Prem Kumar Shishodia, and Akira Yoshida. "Growth of Highly Oriented Zinc Oxide Thin Films by Plasma Enhanced Chemical Vapor Deposition." In Advanced Nondestructive Evaluation I, 1687–90. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-412-x.1687.

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Gupta, Banshi D., and Rana Tabassum. "Surface Plasmon Resonance Based Fiber Optic Sensors Utilizing Zinc Oxide Thin Films and Nanostructures." In Reviews in Plasmonics, 159–97. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-48081-7_8.

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Xue, Shu Wen, and Xiao Tao Zu. "Investigation of Aluminum Content on the Properties of Sol-Gel-Derived Zinc Oxide Thin Films." In Materials Science Forum, 1173–76. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-462-6.1173.

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Conference papers on the topic "Piezoelectric Zinc Oxide Thin Films"

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Luo, Jian, Chongjun He, and Rong Mao. "Gas Sensor Based on Surface Acoustic Waves Using Zinc Oxide Piezoelectric Thin Films." In 2019 3rd International Conference on Circuits, System and Simulation (ICCSS). IEEE, 2019. http://dx.doi.org/10.1109/cirsyssim.2019.8935565.

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Dodds, John S., Frederick N. Meyers, and Kenneth J. Loh. "Enhancing the piezoelectric performance of PVDF-TrFE thin films using zinc oxide nanoparticles." In SPIE Smart Structures and Materials + Nondestructive Evaluation and Health Monitoring, edited by Masayoshi Tomizuka, Chung-Bang Yun, and Jerome P. Lynch. SPIE, 2012. http://dx.doi.org/10.1117/12.915072.

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SUN, Hong-Ming, Yi ZHANG, and Hang GUO. "THE GROWTH AND CHARACTERIZATION OF ZINC OXIDE PIEZOELECTRIC THIN FILM." In Proceedings of the 2006 Symposium. WORLD SCIENTIFIC, 2007. http://dx.doi.org/10.1142/9789812770165_0070.

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Gokhale, N., M. Parmar, K. Rajanna, and M. M. Nayak. "Piezoelectric zinc oxide thin film for MEMS application: A comparative study." In 2008 3rd International Conference on Sensing Technology. ICST 2008. IEEE, 2008. http://dx.doi.org/10.1109/icsenst.2008.4757165.

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Felix, Sarah, Stanley Kon, Jianbin Nie, and Roberto Horowitz. "Strain Sensing With Piezoelectric Zinc Oxide Thin Films for Vibration Suppression in Hard Disk Drives." In ASME 2008 Dynamic Systems and Control Conference. ASMEDC, 2008. http://dx.doi.org/10.1115/dscc2008-2206.

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This paper describes the integration of thin film ZnO strain sensors onto hard disk drive suspensions for improved vibration suppression for tracking control. Sensor location was designed using an efficient optimization methodology based on linear quadratic gaussian (LQG) control. Sensors were fabricated directly onto steel wafers that were subsequently made into instrumented suspensions. Prototype instrumented suspensions were installed into commercial hard drives and tested. For the first time, a sensing signal was successfully obtained while the suspension was flying on a disk as in normal drive operation. Preliminary models were identified from experimental transfer functions. Nominal H2 control simulations demonstrated improved vibration suppression as a result of both the better resolution and higher sensing rate provided by the sensors.
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Saayujya, Chinmoy, Joel Shi-Quan Tan, Yanhui Yuan, Yoke-Rung Wong, and Hejun Du. "Design, fabrication and characterization of a zinc oxide thin-film piezoelectric accelerometer." In 2014 IEEE Ninth International Conference on Intelligent Sensors, Sensor Networks and Information Processing (ISSNIP). IEEE, 2014. http://dx.doi.org/10.1109/issnip.2014.6827679.

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Hsu, Y. H., J. Lin, and W. C. Tang. "P5K-2 Optimization and Characterization of RF Sputtered Piezoelectric Zinc Oxide Thin Film for Transducer Applications." In 2007 IEEE Ultrasonics Symposium Proceedings. IEEE, 2007. http://dx.doi.org/10.1109/ultsym.2007.602.

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Voiculescu, Ioana, Fang Li, Glen Kowach, Hao Su, and Kun Lin Lee. "Wearable and Stretchable Piezoelectric Nanogenerator for Skin Applications." In 2018 Design of Medical Devices Conference. American Society of Mechanical Engineers, 2018. http://dx.doi.org/10.1115/dmd2018-6874.

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The paper describes a stretchable piezoelectric nanogenerator that is intended to harvest energy. The nanogenerator was fabricated from zinc oxide (ZnO) piezoelectric thin film embedded in polymer materials. The microfabricated nanogenerator has the thickness in the micrometer scale to be attached on the skin and stretched by the natural movements of arms, legs or neck. We expect that energy harvested by this device will be able to power wearable skin sensors.
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Voiculescu, Ioana, Shuo Fang, and Fang Li. "Wearable and Stretchable Piezoelectric Energy Harvesting Device Based on Thin Film of ZnO." In ASME 2022 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2022. http://dx.doi.org/10.1115/imece2022-94353.

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Abstract This conference paper presents a stretchable piezoelectric power generator device for energy harvesting. The power generator was fabricated from zinc oxide (ZnO) piezoelectric thin film, gold (Au) electrodes for power harvesting and polymer material as substrate. The microfabricated power generator has the thickness in the micrometer scale to be attached on the skin or garments and stretched by the natural movements of arms, legs or neck. The novelty of this research is to use a uniform film of ZnO deposited at low temperature on a large substrate area on the order of centimeter scale. The challenge of this research is to fabricate the ZnO film on a polymeric substrate without a significant reduction of piezoelectric performance. The usual deposition temperature for ZnO is around 400 °C even though higher deposition temperatures produces ZnO of higher crystalline quality. We used an innovative way to directly deposit ZnO on the polymer substrate below 150 °C. This power generator demonstrated a maximum power output of 200 μW. This is the first attempt to use a uniform film of ZnO for energy harvesting. We expect that energy harvested by this device will be able to power wearable sensors.
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Zhu, Xu, and Eun Sok Kim. "Acoustic-Wave Liquid Mixer." In ASME 1997 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 1997. http://dx.doi.org/10.1115/imece1997-0936.

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Abstract This paper presents a novel approach for microfluid mixing by loosely-focused acoustic waves (generated by piezoelectric Zinc Oxide thin film). Initial results show that our acoustic-wave liquid mixer (AWLM) produces a convection flow in liquid very efficiently, when it is driven by a sinusoidal wave with frequencies corresponding to the thickness-mode resonances (e.g. 240 and 480 MHz) of the piezoelectric film. The AWLM operates without any significant temperature increase in liquid, and will be very attractive for mixing temperature-sensitive fluids.
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