Relevant bibliographies by topics / Piezoresistiv

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Piezoresistiv'

Author: Grafiati
Published: 4 June 2021
Last updated: 4 February 2022

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Journal articles on the topic "Piezoresistiv"

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Yin, Tsung-I., and Tien Anh Nguyen. "Molecules sensing layer design of piezoresistive cantilever sensor for higher surface stress sensitivity." Vietnam Journal of Mechanics 34, no. 4 (November 28, 2012): 311–20. http://dx.doi.org/10.15625/0866-7136/34/4/2345.

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This paper reports on molecular sensing layer design of a piezoresistive cantilever sensor for higher surface stress sensitivity. The proposed analyses show that the previous understanding of piezoresistive cantilevers for surface stress measurement requires reconsideration for a cantilever utilizing polycrystalline silicon as a piezoresistor. The integration of the molecular sensing layer stripe pattern design to the cantilever effectively improves the piezoresistive output and utilizes the full sensing area of the cantilever surface. The proposed sensing layer design can be effectively integrated to current piezoresistive cantilever sensors to improve sensor performance in biochemical assays.
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Rahim, Rosminazuin A., Badariah Bais, and Burhanuddin Yeop Majlis. "Hybrid Simulation Approach on MEMS Piezoresistive Microcantilever Sensor for Biosensing Applications." Advanced Materials Research 74 (June 2009): 283–86. http://dx.doi.org/10.4028/www.scientific.net/amr.74.283.

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This paper uses a hybrid simulation approach in CoventorWare design environment which combines finite element analysis and circuit simulation modeling to obtain the optimal performance of piezoresistive microcantilever sensor. A 250 μm x 100 μm x 1 μm SiO2 cantilever integrated with 0.2 μm thick Si piezoresistor were used in this study. A finite element analysis on piezoresistive microcantilever sensor was conducted in CoventorWare Analyzer environment which incorporates MemMech and MemPZR modules. The sensor sensitivity was obtained by measuring resistivity changes in piezoresistive material in response to surface stress changes of microcantilever. The simulation results were later integrated with system-level simulation solver called Architect to enable the optimization of the sensor circuit output. It involves a hybrid approach which uniquely combined FEM analysis and piezoresistive modeling using circuit simulation environment which results in optimal performance of MEMS piezoresistive microcantilever sensor.
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Gerlach, Gerald, and Roland Werthschützky. "50 Jahre Entdeckung des piezoresistiven Effekts – Geschichte und Entwicklungsstand piezoresistiver Sensoren (50 Years of Piezoresistive Sensors – History and State of the Art of Piezoresistive Sensors)." tm - Technisches Messen 72, no. 2-2005 (February 2005): 53–76. http://dx.doi.org/10.1524/teme.72.2.53.58572.

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Dou, Chuan Guo, Yan Hong Wu, Heng Yang, and Xin Xin Li. "Design, Fabrication and Characterization of a 5x5 Array of Piezoresistive Stress and Temperature Sensors." Key Engineering Materials 503 (February 2012): 43–48. http://dx.doi.org/10.4028/www.scientific.net/kem.503.43.

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This paper reports on the development and characterization of piezoresistive stress and temperature sensors fabricated on silicon-on-insulator (SOI) wafer. The sensor chip consists of a 5x5 array elements enabling the simultaneous measurement of the absolute temperature as well as in-plane stress components in a temperature compensated manner. Each cell comprises a p-type piezoresistor rosette paralleling to the [110] crystal direction of silicon, an n-type piezoresistor rosette along the [100] crystal direction and a temperature sensor. Design, fabrication and characterization of piezoresistive and temperature sensors are described in detail. Moreover, based on the flexible printed circuit board, the prepackaging technique of sensors is reported and the electrical connections between the testing sensors and external measuring devices are achieved, then the changes in resistance versus temperature changes are measured in our experiment, the results show that this approach can be used for the signal measurement of sensor before the second packaging and on-line measurement of packaging stresses.
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Maflin Shaby, S., and A. Vimala Juliet. "Analysis and Optimization of Sensitivity of a MEMS Peizoresistive Pressure Sensor." Advanced Materials Research 548 (July 2012): 652–56. http://dx.doi.org/10.4028/www.scientific.net/amr.548.652.

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This paper presents a MEMS Piezoresistive pressure sensor which utilizes a circular shaped polysilicon diaphragm with a nanowire to enhance the sensitivity of the pressure sensor. The polysilicon nanowire is fabricated in such a way that it forms a bridge between the circular polysilicon diaphragm and the substrate. The high Piezoresistive effect of Silicon nanowires is used to enhance the sensitivity. A circular polysilicon nanowire piezoresistor was fabricated by means of reactive ion etching. This paper describes the performance analysis, structural design and fabrication of piezoresistive pressure sensor using simulation technique. The polysilicon nanowire pressure sensor has a circular diaphragm of 500nm radius and has a thickness about 10nm. Finite element method (FEM) is adopted to optimize the sensor output and to improve the sensitivity of the circular shaped diaphragm of a polysilicon nanowire Piezoresistive pressure sensor. The best position to place the Polysilicon nanowires to receive maximum stress was also considered during the design process..The fabricated polysilicon nanowire has high sensitivity of about 133 mV/VKPa.
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Ansari, Mohd Zahid, and Chongdu Cho. "On self-heating in piezoresistive microcantilevers with short piezoresistor." Journal of Physics D: Applied Physics 44, no. 28 (June 27, 2011): 285402. http://dx.doi.org/10.1088/0022-3727/44/28/285402.

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Pashmforoush, Farzad. "Multiphysics simulation of piezoresistive pressure microsensor using finite element method." FME Transactions 49, no. 1 (2021): 214–19. http://dx.doi.org/10.5937/fme2101214p.

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In this study, the electro-mechanical behavior of a specially designed highsensitive piezoresistor pressure microsensor was simulated using finite element method, through COMSOL multiphysics software. The mechanical deformation of the diaphragm and the distribution of electrical potential in the piezoresistive were evaluated for various pressure values. In order to determine the influence of the temperature sensitivity parameter, different temperature conditions were investigated. According to the obtained results, by increase of the applied pressure, the resistance of the piezoresistor decreased, while, the sensitivity increased. Also, it was observed that at constant pressure, as the temperature increases, the stress on the diaphragm surface decreases, indicating high stress distribution at the sides and the middle of the diaphragm at low temperatures such as -50 °C. Furthermore, the obtained results demonstrated that temperature variations were not very effective on the potential distribution in the piezoresistor. However, the temperature coefficient of sensitivity demonstrated an increasing tendency with increase of the temperature from -50 °C to 50 °C.
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Agarwal, R., R. Mukhiya, R. Sharma, M. K. Sharma, and A. K. Goel. "Finite Element Method-based Design and Simulations of Micro-cantilever Platform for Chemical and Bio-sensing Applications." Defence Science Journal 66, no. 5 (September 30, 2016): 485. http://dx.doi.org/10.14429/dsj.66.10702.

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Micro-electro-mechanical systems (MEMS)-based cantilever platform have capability for the detection of chemical and biological agents. This paper reports about the finite element method (FEM) based design and simulations of MEMS-based piezoresistor cantilever platform to be used for detection of chemical and biological toxic agents. Bulk micromachining technique is adopted for the realisation of the device structure. MEMS piezoresistive biosensing platforms are having potential for a field-based label-free detection of various types of bio-molecules. Using the MEMMECH module of CoventorWare® simulations are performed on the designed model of the device and it is observed that principal stress is maximum along the length (among other dimensions of the micro-cantilever) and remains almost constant for 90 per cent of the length of the micro-cantilever. The dimensions of piezoresistor are optimised and the output voltage vs. stress analysis for various lengths of the piezoresistor is performed using the MEMPZR module of the CoventorWare®.
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Hoa, Phan L. P., Gunnar Suchaneck, and Gerald Gerlach. "Messunsicherheit piezoresistiver Sensoren (Uncertainty in the Measurement of Piezoresistive Sensors)." tm - Technisches Messen 72, no. 2-2005 (February 2005): 77–82. http://dx.doi.org/10.1524/teme.72.2.77.58571.

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Shi, Xiaoqing, Yulan Lu, Bo Xie, Chao Xiang, Junbo Wang, Deyong Chen, and Jian Chen. "A Double-Ended Tuning Fork Based Resonant Pressure Micro-Sensor Relying on Electrostatic Excitation and Piezoresistive Detection." Proceedings 2, no. 13 (November 27, 2018): 875. http://dx.doi.org/10.3390/proceedings2130875.

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This study proposes a microfabricated resonant pressure sensor based on electrostatic excitation and low-impedance piezoresistive detection in which a pair of double-ended tuning forks were utilized as resonators for differential outputs. In operations, targeted pressures deforms the pressure-sensitive membrane, resulting in stress variations of two resonators, leading to shifts of the intrinsic resonant frequencies, which were then measured piezoresistively. The developed microfabricated resonant pressure sensor was fabricated using simple SOI-MEMS processes and quantified in both open-loop and closed-loop manners, where the quality factor, differential sensitivity and linear correlation coefficient were quantified as higher than 10,000, 79.4 Hz/kPa and 0.99999, respectively. Compared to previous resonant piezoresistive sensors, the developed device leveraged single-crystal silicon as the piezoresistor, with advantages in simple sensing structures and fabrication steps. Furthermore, the differential setup was adopted in this study which can further improve the performances of the developed sensors.
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Dissertations / Theses on the topic "Piezoresistiv"

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Corten, Cathrin Carolin. "Synthese und Charakterisierung dünner Hydrogelschichten mit modulierbaren Eigenschaften." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2008. http://nbn-resolving.de/urn:nbn:de:bsz:14-ds-1209463829168-95283.

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Im Mittelpunkt dieser Arbeit stand die Darstellung sensitiver Blockcopolymere und deren Gele, die als Ausgangsmaterialien in Sensor- und Aktorsystemen einsetzbar sind. Die Vereinigung verschiedener Ansprechparameter stellt erhöhte Anforderung an die Synthese. Geringe Ansprechzeiten lassen sich mit einer Gelgröße im µm-Bereich erreichen. Hydrogele dieser Größenordnungen können durch nachträgliche Vernetzung funktioneller linearer Polymere ermöglicht werden. Die Makroinitiatormethode ermöglichte den Aufbau verschiedener linearer photovernetzbarer Blockcopolymere. Zum Einen wurde das temperatursensitive P(n-BuAc)-block-P(PNIPAAm-co-DMIAAm) erhalten, des Weiteren gelang die Darstellung der multi-sensitiven Blockcopolymere P2VP-block-P(NIPAAm-co-DMIAAm) und P4VP-block-P(NIPAAm-co-DMIAAm). Die Blockcopolymere wurden mit variierenden Blocklängen und Verhältnissen sowie mit unterschiedlichem Vernetzergehalt dargestellt. Die Charakterisierung der Blockcopolymere erfolgte mittels 1H-NMR-Spektroskopie, GPC-Messungen (Zusammensetzung) und DSC-Messungen (thermische Eigenschaften). Das Löslichkeitsverhalten in wässrigen Medien wurde durch Dynamische Lichtstreuung bestimmt. Die Beschreibung des Quellverhaltens der vernetzten Schichten erfolgte durch vornehmlich durch optische Methoden (SPR/OWS, WAMS, Ellipsometrie). Die Veränderung des E-Moduls in Abhängigkeit äußerer Parameter konnte mittels AFM untersucht werden. Die Reaktion der Schichten wurde gegenüber Temperatur, pH-Wert und Salzkonzentrationen getestet. Die charakterisierten Filme konnten im Anschluss als sensitive Schichten in piezoresistiven Sensorsystemen verwendetet werden.
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Savaris, Weslin Keven. "Caracterização do compósito piezoresistivo Cu-PDMS para uso como sensor de pressão /." Ilha Solteira, 2020. http://hdl.handle.net/11449/192135.

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Orientador: Marcelo Augusto Assunção Sanches
Resumo: Recentes estudos têm abordado o aprimoramento de sensores de pressão com a finalidade de reproduzir a sensibilidade da pele humana para ser utilizada em robôs. Dentre diversos materiais disponíveis na literatura, destaca-se o material piezoresistivo à base do elastômero Polidimetilsiloxano e Cobre Dendritico (Cu-PDMS), devido à tecnologia empregada na produção destes sensores. Este trabalho trata a síntese e a caracterizações de compósitos piezoresistivo Cu-PDMS para confecção de sensores de pressão, na forma matricial, para aplicações biomédicas, como palmilhas instrumentadas, sensor on/off, dentre outros. Com finalidade de análise do material atuando como sensor de pressão, foram fabricadas e testadas amostras com diferentes composições. Para o estudo das propriedades de cada amostra, foram realizadas caracterizações elétricas (resistência elétrica com pressão variável, condutividade ao longo do tempo e espectroscopia de impedância), mecânicas (caracterização mecânica do material, ensaio de tração e ensaio termogravimétrico) e Microscopia Eletrônica de Varredura (MEV). Os resultados obtidos mostram as faixas possíveis para utilização do material como sensor de pressão, e os fatores que podem influenciar o seu emprego.
Abstract: Recent studies have addressed the improvement of pressure sensors in order to reproduce the sensitivity of human skin to be used in robots. Among the various materials available in the literature, the piezoresistive material based on the polydimethylsiloxane and Dendritic Copper (Cu-PDMS) elastomer stands out, due to the technology used in the production of these sensors. This work deals with the synthesis and characterization of Cu-PDMS piezoresistive composites for making pressure sensors, in matrix form, for biomedical applications such as instrumented insoles, on / off sensor, among others. In order to analyze the material acting as a pressure sensor, samples with different compositions were manufactured and tested. For the study of the properties of each sample, electrical characterizations (electrical resistance with variable pressure, conductivity over time and impedance spectroscopy), mechanical characterizations (mechanical characterization of the material, tensile test and thermogravimetric test) and Scanning Electron Microscopy were performed (ME V). The results obtained show the possible ranges for using the material as a pressure sensor, and the factors that can influence its use.
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Gustavsson, Jimmy. "Mätning av dynamiskt tryck med piezoresistiva tryckgivare på roterande objekt." Thesis, Linköping University, Department of Science and Technology, 2004. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-2669.

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The report handles the transmission of signals from piezoresistive pressuresensors and thermocouple from a rotating object.

This report also evaluates the possibility to collect data in a datalogger that rotates with the object. Telemetrics was previously used for signaltransmission in Finspång, therefore there has been no tests considering preassure measuring. One transmitting method handled in this report is transmission through a slipring connection.

One test with a slipring connection was performed for transmitting signals from a piezoresistive preassuresensor. All parts were mounted on a disc which rotated at 4000 rpm. Measurements were made of static and dynamic preassure. The report also contains a description of the equipment used for the test, and how it was constructed.


Rapporten tar upp överföring av signaler från piezoresistiva tryckgivare samt termoelement från ett roterande objekt.

I rapporten redovisas också om det är möjligt att samla in mätdata i en datalogger som roterar med objektet. Eftersom man, i Finspång, tidigare har använt telemetri för signalöverföring från termoelement så har tryckmätning inte provats. Därför har denna metod inte tagits med i rapporten. En överföringsmetod som tas upp i rapporten är överföring med släpring.

Ett prov genomfördes med en släpring för överföring av signaler från en piezoresistiv tryckgivare. Allt monterades på en skiva som roterades upp till 4 000 varv/min. Det som mättes var statiskt och dynamiskt tryck. I rapporten finns det beskrivet vilken utrustning som använts vid provet och hur den är konstruerad.

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Trinh, Quang Thong. "Hydrogel based piezoresistive pH sensors." Dresden TUDpress, 2006. http://deposit.d-nb.de/cgi-bin/dokserv?id=2860048&prov=M&dok_var=1&dok_ext=htm.

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Johns, Gary Kenneth. "The piezoresistive effect In microflexures /." Diss., CLICK HERE for online access, 2007. http://contentdm.lib.byu.edu/ETD/image/etd1673.pdf.

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Johns, Gary K. "The Piezoresistive Effect In Microflexures." BYU ScholarsArchive, 2006. https://scholarsarchive.byu.edu/etd/1074.

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The objective of this research is to present a new model for predicting the piezoresistive effect in microflexures experiencing bending stresses. A linear model describing piezoresistivity exists for members in pure tension and compression. Extensions of this model to more complex loading conditions do not match experimental results. An accurate model of piezoresistivity in complex loading conditions would expand the design possibilities of piezoresistive devices. A new model to predict piezoresistive effects in tension, compression, and more complex loading conditions is proposed. The focus of this research is to verify a unidirectional form of this proposed model for microflexures in tension and bending. Implementation of the unidirectional form of the model involves geometric design, stress analysis, and electrical analysis. One of the ways to implement the model is with finite-element analysis (FEA). The piezoresistive FEA for flexures (PFF) algorithm is an FEA implementation of the unidirectional form of the model for flexures. A case study is then given in which the resistance curves of two test devices are predicted with the PFF algorithm. Results from the PFF implementation of the unidirectional form of the model show a close comparison between analytical prediction and experimental results. This new model could contribute to optimized sensors, feedback control of microdevices, nanopositioning, and self-sensing microdevices.
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Hoa, Phan Le Phuong. "Uncertainty in measurement of piezoresistive sensors /." Dresden : W.e.b.-Univ.-Verl, 2005. http://deposit.ddb.de/cgi-bin/dokserv?id=2660800&prov=M&dok_var=1&dok_ext=htm.

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Lupien, Christian. "Piezoresistive torque magnetometry at low temperature." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1997. http://www.collectionscanada.ca/obj/s4/f2/dsk2/ftp03/MQ37143.pdf.

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Hyatt, Thomas B. "Piezoresistive Nano-Composites: Characterization and Applications." BYU ScholarsArchive, 2010. https://scholarsarchive.byu.edu/etd/2175.

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Innovative multifunctional materials are essential to many new sensor applications. Piezoresistive nano-composites make up a promising class of such materials that have the potential to provide a measurable response to strain over a much wider range than typical strain gages. Commercial strain gages are currently dominated by metallic sensors with a useable range of a few percent strain at most. There are, however, many applications that would benefit from a reliable wide-range sensor. These might include the study of explosive behavior, instrumentation of flexible components, motion detection for compliant mechanisms and hinges, human-technology interfaces, and a wide variety of bio-mechanical applications where structural materials may often be approximated as elastomeric. In order to quantify large strains, researchers often use optical methods which are tedious and difficult. This thesis proposes a new material and technique for quantifying large strain (up to 40%) by use of piezoresistive nano-composite strain gages. The nano-composite strain gage material is manufactured by suspending nickel nano-strands within a biocompatible silicone matrix. Study and design iteration on the strain gage material requires an improved understanding of the electrical behavior and conduction path within the material when strained. A percolation model has been suggested for numerical approximations, but has only provided marginal results for lack of data. Critical missing information in the percolation model is the nano-strand cluster size, and how that size changes in response to strain. These data are gathered using a dynamic technique in the scanning electron microscope called voltage contrast. Cluster sizes were found to vary in size by approximately 6% upon being strained to 10%. A feasibility study is also conducted on the nano-composite to show its usability as a strain gage. High Displacement Strain Gages (HDSGs) were manufactured from the nano-composite. HDSGs measured the strain of bovine ligament under prescribed loading conditions. Results demonstrate that HDSGs are an accurate means for measuring ligament strains across a broad spectrum of applied deformations.
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Clayton, Marianne E. "Modeling Piezoresistive Effects in Flexible Sensors." BYU ScholarsArchive, 2019. https://scholarsarchive.byu.edu/etd/7396.

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This work describes a model of the piezoresistive behavior in nanocomposite sensors. These sensors are also called flexible sensors because the polymer matrix allows for large deformations without failure. The sensors have conductive nanoparticles dispersed through an insulative polymer matrix. The insulative polymer gaps between nanoparticles are assumed to be possible locations for electron tunneling. When the distance between two nanoparticles is small enough, electrons can tunnel from one nanoparticle to the next and ultimately through the entire sensor. The evolution of this gap distance with strain is important to understand the overall conductivity of the strain sensor. The gap evolution was modeled in two ways: (1) applying Poisson's contraction to the sensor as a homogenous material, referred to as Simple Poisson's Contraction (SPC) and (2) modeling the nanoparticle-polymer system with Finite Element Analysis (FEA). These two gap evolution models were tested in a random resistor network model where each polymer gap was treated as a single resistor in the network. The overall resistance was calculated by solving the resistor network system. The SPC approach, although much simpler, was sufficient for cases where various orientations of nanoparticles were used in the same sensor. The SPC model differed significantly from the FEA, however, in cases where nanoparticles had specific alignment, e.g. all nanoparticles parallel to the tensile axis. It was also found that the distribution used to determine initial gap sizes for the polymer gaps as well as the mean of that distribution significantly impacted the overall resistivity of the sensor.Another key part of this work was to determine if the piezoresistivity in the sensors follows a percolation type behavior under strain. The conductance versus strain curve showed the characteristic s-curve behavior of a percolative system. The conductance-strain curve was also compared to the effective medium and generalized effective medium equations and the latter (which includes percolation theory) fit the random resistor network much more closely. Percolation theory is, therefore, an accurate way to describe this polymer-nanoparticle piezoresistive system.Finally, the FEA and SPC models were compared against experimental data to verify their accuracy. There are also two design problems addressed: one to find the sensor with the largest gauge factor and another to determine how to remove the characteristic initial spike in resistivity seen in nanocomposite sensors.
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Books on the topic "Piezoresistiv"

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Doll, Joseph C., and Beth L. Pruitt. Piezoresistor Design and Applications. New York, NY: Springer New York, 2013. http://dx.doi.org/10.1007/978-1-4614-8517-9.

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Stockermans, Ron J. Comparison calibration of piezoresistive microphones for acoustic power measurements. Monterey, Calif: Naval Postgraduate School, 1992.

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Phan, Hoang-Phuong. Piezoresistive Effect of p-Type Single Crystalline 3C-SiC. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-55544-7.

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Amorphous silicon carbide thin films: Deposition, characterization, etching, and piezoresistive sensors applications. Hauppauge, N.Y: Nova Science Publishers, 2011.

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Nakladal, Arne. Genauigkeitsgrenzen piezoresistiver Siliziumsensoren. Dresden University Press, 1999.

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Doll, Joseph C., and Beth L. Pruitt. Piezoresistor Design and Applications. Springer, 2013.

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Doll, Joseph C., and Beth L. Pruitt. Piezoresistor Design and Applications. Springer, 2013.

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Total Dose Effects of Ionizing and Non-Ionizing Radiation on Piezoresistive Pressure Transducer Chips. Storming Media, 2003.

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Phan, Hoang-Phuong. Piezoresistive Effect of p-Type Single Crystalline 3C-SiC: Silicon Carbide Mechanical Sensors for Harsh Environments. Springer, 2018.

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Fluctuating pressures measured beneath a high-temperature, turbulent boundary layer on a flat plate at a Mach number of 5. [Washington, D.C.]: National Aeronautics and Space Administration, Office of Management, Scientific and Technical Information Division, 1989.

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Book chapters on the topic "Piezoresistiv"

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Adams, Thomas M., and Richard A. Layton. "Piezoresistive transducers." In Introductory MEMS, 211–30. Boston, MA: Springer US, 2009. http://dx.doi.org/10.1007/978-0-387-09511-0_8.

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Winter, Patrick M., Gregory M. Lanza, Samuel A. Wickline, Marc Madou, Chunlei Wang, Parag B. Deotare, Marko Loncar, et al. "Piezoresistive Effect." In Encyclopedia of Nanotechnology, 2110. Dordrecht: Springer Netherlands, 2012. http://dx.doi.org/10.1007/978-90-481-9751-4_100657.

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Kloeck, Ben. "Piezoresistive Sensors." In Sensors, 145–72. Weinheim, Germany: Wiley-VCH Verlag GmbH, 2008. http://dx.doi.org/10.1002/9783527620203.ch5.

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Bhattacharyya, Tarun Kanti, and Anindya Lal Roy. "MEMS Piezoresistive Accelerometers." In Springer Tracts in Mechanical Engineering, 19–34. New Delhi: Springer India, 2014. http://dx.doi.org/10.1007/978-81-322-1913-2_2.

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Büttgenbach, Stephanus, Iordania Constantinou, Andreas Dietzel, and Monika Leester-Schädel. "Piezoresistive Pressure Sensors." In Case Studies in Micromechatronics, 21–85. Berlin, Heidelberg: Springer Berlin Heidelberg, 2020. http://dx.doi.org/10.1007/978-3-662-61320-7_2.

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Pala, Nezih, Ahmad Nabil Abbas, Carsten Rockstuhl, Christoph Menzel, Stefan Mühlig, Falk Lederer, Joseph J. Brown, et al. "Thermal-Piezoresistive Resonators." In Encyclopedia of Nanotechnology, 2724. Dordrecht: Springer Netherlands, 2012. http://dx.doi.org/10.1007/978-90-481-9751-4_100843.

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Sun, Yongke, Toshikazu Nishida, and Scott E. Thompson. "Piezoresistive Strain Sensors." In Strain Effect in Semiconductors, 267–90. Boston, MA: Springer US, 2009. http://dx.doi.org/10.1007/978-1-4419-0552-9_8.

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Büttgenbach, Stephanus. "Der piezoresistive Effekt." In Mikrosystemtechnik, 37–42. Berlin, Heidelberg: Springer Berlin Heidelberg, 2016. http://dx.doi.org/10.1007/978-3-662-49773-9_3.

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Vipulanandan, Cumaraswamy. "Piezoresistive Smart Cement." In Smart Cement, 87–116. New York: CRC Press, 2021. http://dx.doi.org/10.1201/9780429298172-5.

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Doll, Joseph C., and Beth L. Pruitt. "Design Optimization." In Piezoresistor Design and Applications, 149–69. New York, NY: Springer New York, 2013. http://dx.doi.org/10.1007/978-1-4614-8517-9_6.

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Conference papers on the topic "Piezoresistiv"

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Nishida, Toshikazu, Robert Dieme, Mark Sheplak, and Gijs Bosman. "Noise Modeling and Characterization of Piezoresistive Transducers." In ASME 2006 International Mechanical Engineering Congress and Exposition. ASMEDC, 2006. http://dx.doi.org/10.1115/imece2006-15392.

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This paper presents detailed results on noise modeling and experimental characterization applicable to piezoresistive MEMS transducers using a piezoresistive MEMS microphone as an example. To accurately model the lower limit of the dynamic range of piezoresistive MEMS transducers, a detailed noise equivalent circuit, piezoresistor noise model, and experimental noise measurements are needed. From the sensitivity and the total root-mean-square output noise, the minimum detectable signal (MDS) may be computed. Key experimental results include comparison of the DC bridge and AC bridge noise measurement techniques and use of the AC measurement technique when the piezoresistive transducer output noise is less than the low frequency DC setup noise.
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Chang, Heng-Chung, Hsieh-Shen Hsieh, Sung-Cheng Lo, Chih-Fan Hu, and Weileun Fang. "Piezoresistive pressure sensor with Ladder shape design of piezoresistor." In 2012 IEEE Sensors. IEEE, 2012. http://dx.doi.org/10.1109/icsens.2012.6411323.

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Meti, Shwetha, Kirankumar B. Balavalad, Ajayakumar C. Katageri, and B. G. Sheeparamatti. "Sensitivity enhancement of piezoresistive pressure sensor with meander shape piezoresistor." In 2016 International Conference on Energy Efficient Technologies for Sustainability (ICEETS). IEEE, 2016. http://dx.doi.org/10.1109/iceets.2016.7583874.

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Cho, Chun-Hyung, Richard C. Jaeger, Jeffrey C. Suhling, and M. Kaysar Rahim. "Chip-on-Beam and Hydrostatic Calibration of the Piezoresistive Coefficients on (111) Silicon." In ASME 2007 InterPACK Conference collocated with the ASME/JSME 2007 Thermal Engineering Heat Transfer Summer Conference. ASMEDC, 2007. http://dx.doi.org/10.1115/ipack2007-33570.

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Stress sensing test chips are used to investigate die stresses arising from assembly and packaging operations. The chips incorporate resistor or transistor sensing elements that are able to measure stresses via the observation of the changes in their resistivity/mobility. The piezoresistive behavior of such sensors is characterized by three piezoresistive (pi) coefficients, which are electro-mechanical material constants. Stress sensors fabricated on the surface of the (111) silicon wafers offer the advantage of being able to measure the complete stress state compared to such sensors fabricated on the (100) silicon. However, complete calibration of the three independent piezoresistive coefficients is more difficult and one approach utilizes hydrostatic measurement of the silicon “pressure” coefficients. We are interested in stress measurements over a very broad range of temperatures, and this paper present the experimental methods and results for hydrostatic measurements of the pressure coefficient of both n- and p-type silicon over a wide range of temperatures and then uses the results to provide a complete set of temperature dependent piezoresisitive coefficients for the (111) silicon.
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Lin, Chun-Te, Chih-Tang Peng, Ji-Cheng Lin, and Kuo-Ning Chiang. "Analysis and Validation of Sensing Sensitivity of a Piezoresistive Pressure Sensor." In ASME 2003 International Electronic Packaging Technical Conference and Exhibition. ASMEDC, 2003. http://dx.doi.org/10.1115/ipack2003-35053.

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In this study, a packaged silicon based piezoresistive pressure sensor is designed, fabricated, and studied. A finite element method (FEM) is adopted for designing and optimizing the sensor performance. Thermal as well as pressure loading on the sensor is applied to make a comparison between experimental and simulation results. Furthermore, a method that transfers the simulation stress data into output voltage is proposed in this study, and the results indicate that the experimental result coincides with the simulation data. In order to achieve better sensor performance, a parametric analysis is performed to evaluate the system output sensitivity of the pressure sensor. The design parameters of the pressure sensor include membrane size/shape and the location of piezoresistor. The findings depict that proper selection of the membrane geometry and piezoresistor location can enhance the sensor sensitivity.
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Katageri, Ajayakumar C., and B. G. Sheeparamatti. "Sensitivity Enhancement of Piezoresistive Pressure Sensor using Carbon Nanotube as a Piezoresistor." In 2019 Second International Conference on Advanced Computational and Communication Paradigms (ICACCP). IEEE, 2019. http://dx.doi.org/10.1109/icaccp.2019.8882921.

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Nisanth, A., K. J. Suja, and Rama Komaragiri. "Performance analysis of a silicon piezoresistive pressure sensor based on diaphragm geometry and piezoresistor dimensions." In 2014 International Conference on Circuit, Power and Computing Technologies (ICCPCT). IEEE, 2014. http://dx.doi.org/10.1109/iccpct.2014.7055011.

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White, Robert D., and Karl Grosh. "Design and Characterization of a MEMS Piezoresistive Cochlear-Like Acoustic Sensor." In ASME 2002 International Mechanical Engineering Congress and Exposition. ASMEDC, 2002. http://dx.doi.org/10.1115/imece2002-33309.

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The mammalian cochlea achieves excellent acoustic transduction though the use of mechanical signal processing. The device presented in this paper mimics the structure of the cochlea with a micromachined array of nearly 3000 0.34 μm thick silicon beams suspended between two wafer-high ducts. Piezoresistive strain gauges are incorporated into the beams to produce 38 channels of realtime frequency information. Device mechanical and electrical models are presented. Initial mechanical measurements in air demonstrate good agreement with predicted frequency sensitive and response amplitude. Device sensitivity in air is tentatively measured to be 30 mm/s of beam center velocity response per Pascal of input pressure, corresponding to a predicted piezoresistor sensitivity of 7000 ppm/Pa. This gives an expected achievable resolution of 250 μParms in a 100 kHz band in air. Note that this differs from the intended operating mode of the transducer, which is in fluid over a 20 kHz band.
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Pandya, Hardik J., Hyun Tae Kim, and Jaydev P. Desai. "A Microscale Piezoresistive Force Sensor for Nanoindentation of Biological Cells and Tissues." In ASME 2013 Dynamic Systems and Control Conference. American Society of Mechanical Engineers, 2013. http://dx.doi.org/10.1115/dscc2013-3994.

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We present the design and fabrication of a Micro-Electro-Mechanical Systems based piezoresistive cantilever force sensor as a potential candidate for micro/nano indentation of biological specimens such as cells and tissues. The fabricated force sensor consists of a silicon cantilever beam with a p-type piezoresistor and a cylindrical probing tip made from SU-8 polymer. One of the key features of the sensor is that a standard silicon wafer is used to make silicon-on-insulator (SOI), thereby reducing the cost of fabrication. To make SOI from standard silicon wafer the silicon film was sputtered on an oxidized silicon wafer and annealed at 1050 °C so as to obtain polycrystalline silicon. The sputtered silicon layer was used to fabricate the cantilever beam. The as-deposited and annealed silicon films were experimentally characterized using X-ray diffraction (XRD) and Atomic Force Microscopy (AFM). The annealed silicon film was polycrystalline with a low surface roughness of 3.134 nm (RMS value).
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Larsen, Gerrit T., Larry L. Howell, and Brian D. Jensen. "Integrated Piezoresistive Flexure Model in Polysilicon." In ASME 2011 International Design Engineering Technical Conferences and Computers and Information in Engineering Conference. ASMEDC, 2011. http://dx.doi.org/10.1115/detc2011-47902.

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This paper presents a new model and test device for determining piezoresistive response in long, thin polysilicon beams with axial and bending moment inducing loads. If the piezoresistive coefficients are known, the Integrated Piezoresistive Flexure Model (IPFM) is used to find the new resistance of a beam under stress. The IPFM first discretizes the beam into small volumes represented by resistors. The stress that each of these volumes experiences is calculated, and the stress is used to change the resistance of the representative resistors according to a second-order piezoresistive equation. Once the resistance change in each resistor is calculated, they are combined in parallel and series to find the resistance change of the entire beam. If the piezoresitive coefficients are not initially known, data are first collected from a test device. Piezoresistive coefficients need to be estimated and the IPFM is run for the test device’s different stress states giving resistance predictions. Optimization is done until changing the piezoresistive coefficients provides model predictions that accurately match experimental data. These piezoresistive coefficients can then be used to design and optimize other piezoresistive devices. A sensor is optimized using this method and is found to increase voltage response by an estimated 10 times.
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Reports on the topic "Piezoresistiv"

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Shayegan, Mansour. Development of Ultra Sensitive Piezoresistive Sensors Using AlAs 2D Electrons. Fort Belvoir, VA: Defense Technical Information Center, February 2008. http://dx.doi.org/10.21236/ada482249.

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D.E. Hooks. Stress Measurements in Shock-Loaded PBX 9501 with Embedded Longitudinal and Lateral Piezoresistive Ytterbium Gauges. Office of Scientific and Technical Information (OSTI), December 2004. http://dx.doi.org/10.2172/835919.

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BATEMAN, VESTA I., FREDERICK A. BROWN, and MICHAEL A. NUSSER. High Shock, High Frequency Characteristics of a Mechanical Isolator for a Piezoresistive Accelerometer, the ENDEVCO 7270AM6*. Office of Scientific and Technical Information (OSTI), July 2000. http://dx.doi.org/10.2172/759454.

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