Journal articles: 'Piezoresistiv'

1

Yin, Tsung-I., and Tien Anh Nguyen. "Molecules sensing layer design of piezoresistive cantilever sensor for higher surface stress sensitivity." Vietnam Journal of Mechanics 34, no. 4 (November 28, 2012): 311–20. http://dx.doi.org/10.15625/0866-7136/34/4/2345.

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This paper reports on molecular sensing layer design of a piezoresistive cantilever sensor for higher surface stress sensitivity. The proposed analyses show that the previous understanding of piezoresistive cantilevers for surface stress measurement requires reconsideration for a cantilever utilizing polycrystalline silicon as a piezoresistor. The integration of the molecular sensing layer stripe pattern design to the cantilever effectively improves the piezoresistive output and utilizes the full sensing area of the cantilever surface. The proposed sensing layer design can be effectively integrated to current piezoresistive cantilever sensors to improve sensor performance in biochemical assays.

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Rahim, Rosminazuin A., Badariah Bais, and Burhanuddin Yeop Majlis. "Hybrid Simulation Approach on MEMS Piezoresistive Microcantilever Sensor for Biosensing Applications." Advanced Materials Research 74 (June 2009): 283–86. http://dx.doi.org/10.4028/www.scientific.net/amr.74.283.

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This paper uses a hybrid simulation approach in CoventorWare design environment which combines finite element analysis and circuit simulation modeling to obtain the optimal performance of piezoresistive microcantilever sensor. A 250 μm x 100 μm x 1 μm SiO2 cantilever integrated with 0.2 μm thick Si piezoresistor were used in this study. A finite element analysis on piezoresistive microcantilever sensor was conducted in CoventorWare Analyzer environment which incorporates MemMech and MemPZR modules. The sensor sensitivity was obtained by measuring resistivity changes in piezoresistive material in response to surface stress changes of microcantilever. The simulation results were later integrated with system-level simulation solver called Architect to enable the optimization of the sensor circuit output. It involves a hybrid approach which uniquely combined FEM analysis and piezoresistive modeling using circuit simulation environment which results in optimal performance of MEMS piezoresistive microcantilever sensor.

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Gerlach, Gerald, and Roland Werthschützky. "50 Jahre Entdeckung des piezoresistiven Effekts – Geschichte und Entwicklungsstand piezoresistiver Sensoren (50 Years of Piezoresistive Sensors – History and State of the Art of Piezoresistive Sensors)." tm - Technisches Messen 72, no. 2-2005 (February 2005): 53–76. http://dx.doi.org/10.1524/teme.72.2.53.58572.

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Dou, Chuan Guo, Yan Hong Wu, Heng Yang, and Xin Xin Li. "Design, Fabrication and Characterization of a 5x5 Array of Piezoresistive Stress and Temperature Sensors." Key Engineering Materials 503 (February 2012): 43–48. http://dx.doi.org/10.4028/www.scientific.net/kem.503.43.

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This paper reports on the development and characterization of piezoresistive stress and temperature sensors fabricated on silicon-on-insulator (SOI) wafer. The sensor chip consists of a 5x5 array elements enabling the simultaneous measurement of the absolute temperature as well as in-plane stress components in a temperature compensated manner. Each cell comprises a p-type piezoresistor rosette paralleling to the [110] crystal direction of silicon, an n-type piezoresistor rosette along the [100] crystal direction and a temperature sensor. Design, fabrication and characterization of piezoresistive and temperature sensors are described in detail. Moreover, based on the flexible printed circuit board, the prepackaging technique of sensors is reported and the electrical connections between the testing sensors and external measuring devices are achieved, then the changes in resistance versus temperature changes are measured in our experiment, the results show that this approach can be used for the signal measurement of sensor before the second packaging and on-line measurement of packaging stresses.

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Maflin Shaby, S., and A. Vimala Juliet. "Analysis and Optimization of Sensitivity of a MEMS Peizoresistive Pressure Sensor." Advanced Materials Research 548 (July 2012): 652–56. http://dx.doi.org/10.4028/www.scientific.net/amr.548.652.

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This paper presents a MEMS Piezoresistive pressure sensor which utilizes a circular shaped polysilicon diaphragm with a nanowire to enhance the sensitivity of the pressure sensor. The polysilicon nanowire is fabricated in such a way that it forms a bridge between the circular polysilicon diaphragm and the substrate. The high Piezoresistive effect of Silicon nanowires is used to enhance the sensitivity. A circular polysilicon nanowire piezoresistor was fabricated by means of reactive ion etching. This paper describes the performance analysis, structural design and fabrication of piezoresistive pressure sensor using simulation technique. The polysilicon nanowire pressure sensor has a circular diaphragm of 500nm radius and has a thickness about 10nm. Finite element method (FEM) is adopted to optimize the sensor output and to improve the sensitivity of the circular shaped diaphragm of a polysilicon nanowire Piezoresistive pressure sensor. The best position to place the Polysilicon nanowires to receive maximum stress was also considered during the design process..The fabricated polysilicon nanowire has high sensitivity of about 133 mV/VKPa.

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6

Ansari, Mohd Zahid, and Chongdu Cho. "On self-heating in piezoresistive microcantilevers with short piezoresistor." Journal of Physics D: Applied Physics 44, no. 28 (June 27, 2011): 285402. http://dx.doi.org/10.1088/0022-3727/44/28/285402.

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7

Pashmforoush, Farzad. "Multiphysics simulation of piezoresistive pressure microsensor using finite element method." FME Transactions 49, no. 1 (2021): 214–19. http://dx.doi.org/10.5937/fme2101214p.

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In this study, the electro-mechanical behavior of a specially designed highsensitive piezoresistor pressure microsensor was simulated using finite element method, through COMSOL multiphysics software. The mechanical deformation of the diaphragm and the distribution of electrical potential in the piezoresistive were evaluated for various pressure values. In order to determine the influence of the temperature sensitivity parameter, different temperature conditions were investigated. According to the obtained results, by increase of the applied pressure, the resistance of the piezoresistor decreased, while, the sensitivity increased. Also, it was observed that at constant pressure, as the temperature increases, the stress on the diaphragm surface decreases, indicating high stress distribution at the sides and the middle of the diaphragm at low temperatures such as -50 °C. Furthermore, the obtained results demonstrated that temperature variations were not very effective on the potential distribution in the piezoresistor. However, the temperature coefficient of sensitivity demonstrated an increasing tendency with increase of the temperature from -50 °C to 50 °C.

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Agarwal, R., R. Mukhiya, R. Sharma, M. K. Sharma, and A. K. Goel. "Finite Element Method-based Design and Simulations of Micro-cantilever Platform for Chemical and Bio-sensing Applications." Defence Science Journal 66, no. 5 (September 30, 2016): 485. http://dx.doi.org/10.14429/dsj.66.10702.

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Micro-electro-mechanical systems (MEMS)-based cantilever platform have capability for the detection of chemical and biological agents. This paper reports about the finite element method (FEM) based design and simulations of MEMS-based piezoresistor cantilever platform to be used for detection of chemical and biological toxic agents. Bulk micromachining technique is adopted for the realisation of the device structure. MEMS piezoresistive biosensing platforms are having potential for a field-based label-free detection of various types of bio-molecules. Using the MEMMECH module of CoventorWare® simulations are performed on the designed model of the device and it is observed that principal stress is maximum along the length (among other dimensions of the micro-cantilever) and remains almost constant for 90 per cent of the length of the micro-cantilever. The dimensions of piezoresistor are optimised and the output voltage vs. stress analysis for various lengths of the piezoresistor is performed using the MEMPZR module of the CoventorWare®.

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Hoa, Phan L. P., Gunnar Suchaneck, and Gerald Gerlach. "Messunsicherheit piezoresistiver Sensoren (Uncertainty in the Measurement of Piezoresistive Sensors)." tm - Technisches Messen 72, no. 2-2005 (February 2005): 77–82. http://dx.doi.org/10.1524/teme.72.2.77.58571.

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10

Shi, Xiaoqing, Yulan Lu, Bo Xie, Chao Xiang, Junbo Wang, Deyong Chen, and Jian Chen. "A Double-Ended Tuning Fork Based Resonant Pressure Micro-Sensor Relying on Electrostatic Excitation and Piezoresistive Detection." Proceedings 2, no. 13 (November 27, 2018): 875. http://dx.doi.org/10.3390/proceedings2130875.

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This study proposes a microfabricated resonant pressure sensor based on electrostatic excitation and low-impedance piezoresistive detection in which a pair of double-ended tuning forks were utilized as resonators for differential outputs. In operations, targeted pressures deforms the pressure-sensitive membrane, resulting in stress variations of two resonators, leading to shifts of the intrinsic resonant frequencies, which were then measured piezoresistively. The developed microfabricated resonant pressure sensor was fabricated using simple SOI-MEMS processes and quantified in both open-loop and closed-loop manners, where the quality factor, differential sensitivity and linear correlation coefficient were quantified as higher than 10,000, 79.4 Hz/kPa and 0.99999, respectively. Compared to previous resonant piezoresistive sensors, the developed device leveraged single-crystal silicon as the piezoresistor, with advantages in simple sensing structures and fabrication steps. Furthermore, the differential setup was adopted in this study which can further improve the performances of the developed sensors.

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11

Tian, Yuan, Yi Liu, Yang Wang, Jia Xu, and Xiaomei Yu. "A Flexible PI/Si/SiO2 Piezoresistive Microcantilever for Trace-Level Detection of Aflatoxin B1." Sensors 21, no. 4 (February 5, 2021): 1118. http://dx.doi.org/10.3390/s21041118.

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In this paper, a polyimide (PI)/Si/SiO2-based piezoresistive microcantilever biosensor was developed to achieve a trace level detection for aflatoxin B1. To take advantage of both the high piezoresistance coefficient of single-crystal silicon and the small spring constant of PI, the flexible piezoresistive microcantilever was designed using the buried oxide (BOX) layer of a silicon-on-insulator (SOI) wafer as a bottom passivation layer, the topmost single-crystal silicon layer as a piezoresistor layer, and a thin PI film as a top passivation layer. To obtain higher sensitivity and output voltage stability, four identical piezoresistors, two of which were located in the substrate and two integrated in the microcantilevers, were composed of a quarter-bridge configuration wheatstone bridge. The fabricated PI/Si/SiO2 microcantilever showed good mechanical properties with a spring constant of 21.31 nN/μm and a deflection sensitivity of 3.54 × 10−7 nm−1. The microcantilever biosensor also showed a stable voltage output in the Phosphate Buffered Saline (PBS) buffer with a fluctuation less than 1 μV @ 3 V. By functionalizing anti-aflatoxin B1 on the sensing piezoresistive microcantilever with a biotin avidin system (BAS), a linear aflatoxin B1 detection concentration resulting from 1 ng/mL to 100 ng/mL was obtained, and the toxic molecule detection also showed good specificity. The experimental results indicate that the PI/Si/SiO2 flexible piezoresistive microcantilever biosensor has excellent abilities in trace-level and specific detections of aflatoxin B1 and other biomolecules.

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Tian, Yuan, Rui Zhao, Yi Liu, and Xiaomei Yu. "A Low Spring Constant Piezoresistive Microcantilever for Biological Reagent Detection." Micromachines 11, no. 11 (November 12, 2020): 1001. http://dx.doi.org/10.3390/mi11111001.

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This paper introduces a piezoresistive microcantilever with a low spring constant. The microcantilever was fabricated with titanium (Ti) as the piezoresistor, a low spring constant polyimide (PI) layer, and a thin silicon oxide (SiO2) layer as the top and bottom passive layers, respectively. Excellent mechanical performances with the spring constant of 0.02128 N/m and the deflection sensitivity (∆V/V)/∆z of 1.03 × 10−7 nm−1 were obtained. The output voltage fluctuation of a Wheatstone bridge, which consists of four piezoresistive microcantilevers, is less than 3 μV@3 V in a phosphate buffered saline (PBS) environment. A microcantilever aptasensor was then developed through functionalizing the microcantilevers with a ricin aptamer probe, and detections on ricin with concentrations of 10, 20, 50 and 100 ng/mL were successfully realized. A good specificity was also confirmed by using bovine serum albumin (BSA) as a blank control. The experiment results show that the Ti and PI-based microcantilever has great prospects for ultrasensitive biochemical molecule detections with high reliability and specificity.

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13

Zhao, Li Bo, Xu Dong Fang, Yu Long Zhao, Zhuang De Jiang, and Yong Li. "A High Pressure Sensor with Circular Diaphragm Based on MEMS Technology." Key Engineering Materials 483 (June 2011): 206–11. http://dx.doi.org/10.4028/www.scientific.net/kem.483.206.

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A pressure sensor in the range of 25 MPa with circular diaphragm is designed and fabricated, and the calibration experiments prove its excellent performance, which also reflects the correct choice of design after analyzing the effect of diaphragm dimension, location and shapes of piezoresistors. Circular diaphragms of different thickness and diameters are simulated to meet the pressure requirement of 25 MPa. It also displays the advantage of piezoresistive sensors over others and the difference characteristics between different types of piezoresistive sensors. And then the effect of piezoresistor location is analyzed and simulated to attain high accuracy and sensitivity after the circular diaphragm chip is packaged with borosilicate glass ring. The whole fabrication process of the chip is inexpensive and compatible with standard MEMS process. The experimental results show the developed high pressure sensor with the sensitivity of 2.533 mV/MPa has excellent performance, such as linearity of 0.08%FS, hysteresis of 0.03%FS, accuracy of 0.11%FS and repeatability of 0.03%FS under high temperature of 200 °C.

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14

Li, Liang, Lei, Hong, Li, Li, Ghaffar, Li, and Xiong. "Quantitative Analysis of Piezoresistive Characteristic Based on a P-type 4H-SiC Epitaxial Layer." Micromachines 10, no. 10 (September 20, 2019): 629. http://dx.doi.org/10.3390/mi10100629.

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In this work, the piezoresistive properties of heavily doped p-type 4H-SiC at room temperature were investigated innovatively. It was verified by a field emission scanning electron microscope (FESEM), X-ray diffraction (XRD), and laser Raman spectroscopy (LRS) that the crystal quality of the epitaxial layer was good. The doping concentration and thickness of the epitaxial layer were measured by secondary ion mass spectrometry (SIMS) to be ~1.12 × 1019 cm−3 and ~1.1 μm, respectively. The 4H-SiC cantilever beam along crystal orientation was fabricated, and the fixed end of the cantilever beam was integrated with longitudinal and transverse p-type 4H-SiC piezoresistors. A good ohmic contact was formed between Ni/Ti/Al/Au and a p-type 4H-SiC piezoresistor under nitrogen environment annealing at 1050 °C for 5 min. The free end of the cantilever beam was forced to cause strain on the p-type 4H-SiC piezoresistor, and then the resistances were measured by a high precision multimeter. The experimental results illustrated that longitudinal and transverse gauge factors (GFs) of the p-type 4H-SiC piezoresistors were 26.7 and −21.5, respectively, within the strain range of 0–336με. In order to further verify the electro-mechanical coupling effect of p-type 4H-SiC, the piezoresistors on the beam were connected to the Wheatstone full-bridge circuit and the output changes were observed under cyclic loading of 0–0.5 N. The measuring results revealed that the transducer based on the 4H-SiC piezoresistive effect exhibited good linearity and hysteresis, which confirmed that p-type 4H-SiC has the potential for pressure or acceleration sensing applications.

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Gamil, Mohammed, Osamu Tabata, Koichi Nakamura, Ahmed M. R. Fath El-Bab, and Ahmed A. El-Moneim. "Investigation of a New High Sensitive Micro-Electromechanical Strain Gauge Sensor Based on Graphene Piezoresistivity." Key Engineering Materials 605 (April 2014): 207–10. http://dx.doi.org/10.4028/www.scientific.net/kem.605.207.

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A new strain gauge based on graphene piezoresistivity was fabricated by a novel low cost technique which suits mass production of micro piezoresistor sensors. The strain gauge consists of a monolayer graphene film made by chemical vapor deposition on a copper foil surface, and transferred to Si/SiO2 surface by using a polymethyl-methacrylate (PMMA) assisted transfer method. The film is shaped by laser machine to work as a conductive-piezoresistive material between two deposited electrical silver electrodes. This method of fabrication provides a high productivity due to the homogeneous distribution of the graphene monolayer all over the Si/SiO2 surface. The experimentally measured gauge factor of graphene based device is 255, which promises a new strain gauge sensor of high sensitivity.

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Stavroulis, Stefanos, and Roland Werthschützky. "Neuartiger überlastfester piezoresistiver Silizium-Hochdrucksensor (A Novel Overload Resistant Piezoresistive Silicon High Pressure Sensor)." tm - Technisches Messen 70, no. 4-2003 (April 2003): 199–205. http://dx.doi.org/10.1524/teme.70.4.199.20180.

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Kumar, S. Santosh, and B. D. Pant. "Effect of piezoresistor configuration on output characteristics of piezoresistive pressure sensor: an experimental study." Microsystem Technologies 22, no. 4 (February 4, 2015): 709–19. http://dx.doi.org/10.1007/s00542-015-2451-5.

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18

Tortonese, M., and F. J. Giessibl. "Atomic-Force Microscopy with piezoresistive cantilevers." Proceedings, annual meeting, Electron Microscopy Society of America 52 (1994): 1064–65. http://dx.doi.org/10.1017/s0424820100173054.

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The atomic force microscope (AFM) works by measuring the deflection of a cantilever as it is scanned over a sample. A sharp tip at the end of the cantilever is responsible for the high lateral resolution achieved with the AFM. There are several ways to measure the deflection of the cantilever. The technique used to measure the deflection of the cantilever most often dictates the mechanical complexity and stability of the instrument. Electron tunneling, interferometry and capacitive sensors have been used successfully. The most common way to measure the cantilever deflection is by means of an optical deflection detector.The piezoresistivc cantilever offers a new way to measure the deflection of the cantilever, with performances comparable to the performances of other deflection detectors, and with the advantage that the sensor is incorporated in the cantilever. This simplifies the design and operation of the microscope In particular, the piezoresistive cantilever facilitates the use and often improves the performances of an AFM when operated in ultra high vacuum (UHV), at low temperature, or when used to image large samples.

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Vetrivel, S., Ribu Mathew, and A. Ravi Sankar. "Design and optimization of a doubly clamped piezoresistive acceleration sensor with an integrated silicon nanowire piezoresistor." Microsystem Technologies 23, no. 8 (November 30, 2016): 3525–36. http://dx.doi.org/10.1007/s00542-016-3219-2.

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Lu, Xue Bin, Xiao Wei Liu, Rong Yan Chuai, Chang Zhi Shi, Ming Xue Huo, and Wei Ping Chen. "Analysis of Tunneling Piezoresistive Effect of P-Type Polysilicon Nanofilms." Advanced Materials Research 60-61 (January 2009): 89–93. http://dx.doi.org/10.4028/www.scientific.net/amr.60-61.89.

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The polysilicon nanofilms have significant piezoresistive characteristics. In this paper, an analysis of tunneling piezoresistive effect of p-type polysilicon nanofilms is presented based on the experimental data. The analysis results show that the tunneling piezoresistive effect is much remarkable than piezoresistive effect of neutral region, and the former is about 1.3 to 1.5 times of the latter. The higher is doping concentration, the more remarkable tunneling piezoresistive effect is. This advantage can be utilized to improve the temperature characteristics of polysilicon piezoresistive sensor.

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Wang, Peng Yu, Bin Li, and Wang Xian Quan. "Research on the Piezoresistive Properties of Conductive Silicone Rubber under Water Pressure." Applied Mechanics and Materials 713-715 (January 2015): 2843–47. http://dx.doi.org/10.4028/www.scientific.net/amm.713-715.2843.

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The conductive silicon rubber samples have been prepared in different filler ingredients, the platform is builded for testing the piezoresistive characteristics of conductive silicon rubber when the material is under water pressure and the test methods are designed, the body piezoresistive properties and surface piezoresistive properties under the water pressure within a certain range are studied respectively. The results show that, the sample of 6% acetylene black/2% nanoSiO2 blends exhibit the best piezoresistive performance when the samples are under water pressure, the piezoresistive properties of the material can be improved with the increase of the thickness of the materials (2mm-4mm), and the conductive silicon rubber used for the pressure-sensitive materials of piezoresistive gauge is feasible.

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Zhu, Jian Long, Wei Hua Li, Zai Fa Zhou, and Qin Gan Huang. "The Study on the Analytic Model and Design Software for IP of Piezoresistive Cantilever Beams." Key Engineering Materials 562-565 (July 2013): 482–85. http://dx.doi.org/10.4028/www.scientific.net/kem.562-565.482.

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Piezoresistive sensor was one of the earliest silicon MEMS devices, which based on the theory of piezoresistive. In order to build the piezoresistive IP library for the MEMS foundry, we improved the structures of the piezoresistive based on the achievement of Liwei Lin1, and new analytic model and design software for square shape membrance has been developed. The ability to calculate sensitivity and linearity of MEMS piezoresistive sensor using the new model have been demonstrated. As results, output voltage, sensitivity and linearity characteristics of MEMS sensor are presented in this paper.

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Winkler, Christoph, Stefan Haase, Ulrich Schwarz, and Markus Jahreis. "Piezoresistive bond lines for timber construction monitoring—experimental scale-up." Wood Science and Technology 55, no. 5 (June 24, 2021): 1379–400. http://dx.doi.org/10.1007/s00226-021-01305-6.

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AbstractSeveral laboratory studies and experiments have demonstrated the usability of polymer films filled with electrically conductive filler as piezoresistive material. Applied to adhesives, the glue lines of wood products can achieve multifunctional—thus bonding and piezoresistive/strain sensing—properties. Based on critical load areas in timber constructions, upscaled test setups for simplified load situations were designed, especially with regard to a stress-free electrical contact. In a second step, another upscaling was done to small glulam beams. Based on an experimental test sequence, the piezoresistive reactions as well as the behaviour until failure were analysed. The results show in all cases that a piezoresistive reaction of the multifunctionally bonded specimens was measurable, giving a difference in the extent of relative change. Additionally, measured phenomena like inverse piezoresistive reactions, electrical resistance drift and the absence of a piezoresistive reaction were discussed, based on additional strain analysis by digital image correlation. A model of macroscopic and microscopic strains influencing the piezoresistive reaction of the electrically conductive bond line in wood was used to explain all experimental results. Finally, a first scale-up of piezoresistive bond lines from laboratory samples to glulam beams was possible and successful.

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Shi, Chang Zhi, Xiao Wei Liu, Xuan Wu, and Hai Tao Zheng. "Piezoresistive Sensitivity and Al Ohmic Contact of Highly Doped Polycrystalline Silicon Nano Thin Films." Key Engineering Materials 483 (June 2011): 789–93. http://dx.doi.org/10.4028/www.scientific.net/kem.483.789.

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The piezoresistive and ohmic contact properties of polycrystalline silicon nano thin films were investigated in this paper. The polycrystalline silicon films with different thicknesses and doping concentrations were deposited by LPCVD and doped with boron highly, and then the cantilever beam samples were fabricated by photolithography and wet etching. By measuring the gauge factor and specific contact resistivity, the specific contact resistivity of Al contacts can reach 2.4×10-3Ω·cm2 after the alloying at 450 °C for 20 min; the enhanced piezoresistive effect of highly doped polycrystalline silicon nano thin films was discovered. The conclusions indicated that the enhanced piezoresistive sensitivity of PNTFs is due to the modification of depletion region barrier by ultra high doping and film thickness thinning and the enhancement of tunneling piezoresistive effect. The distinct piezoresistive phenomenon of PNTFs could be utilized for the development and fabrication of miniature piezoresistive sensors.

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Zuo, Jian Dong, and Chao Yun Luo. "Piezoresistive Property of Carbon Fiber Reinforced Plastics." Key Engineering Materials 575-576 (September 2013): 174–78. http://dx.doi.org/10.4028/www.scientific.net/kem.575-576.174.

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Carbon fiber reinforced plastics (CFRP) were prepared by manual molding technology and the effect of loading speed on the piezoresistive property of CFPR was discussed. The piezoresistive sensitivity of CFRP with the different content of carbon fibers was contrasted and the interface morphology of CFRP was observed by SEM. The results show that CFRP has the obvious piezoresistive property and it can provide early warning as a kind of strain sensor. The piezoresistive sensitivity of CFRP decreases as the increasing of the content of carbon fibers in CFRP. Moreover the piezoresistive sensitivity of CFRP reduced as the increasing of loading speed. The SEM showed that the interface was good between carbon fibers and epoxy resin.

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Chi, Yung-Wei, Kuo-Hao Tseng, Ruya Li, and Tingrui Pan. "Comparison of piezoresistive sensor to PicoPress® in in-vitro interface pressure measurement." Phlebology: The Journal of Venous Disease 33, no. 5 (April 21, 2017): 315–20. http://dx.doi.org/10.1177/0268355517705292.

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Objective Interface pressure, the sine qua non for compression therapy, is rarely measured in clinical practice and scientific research. The goal of this study aimed to compare and examine the accuracy between a commercially available piezoresistive sensor and PicoPress® (Microlab, Padua, Italy) using the cylinder cuff model to measure in-vitro interface pressure. Method Ten piezoresistive sensors were calibrated using the National Institute of Standard and Technology certified manometer, and compared to PicoPress® using cylinder cuff model from 20 to 120 mmHg. Two statistical analyses were performed: (a) two-sample t-test to compare the front to back surface of the piezoresistive sensors using mean pressure value and (b) one-sample paired t-test to compare the front and back surface of the piezoresistive sensors to PicoPress® and true pressure using mean pressure value. Result There was no difference in interface pressure measurement between the front and back surface of the piezoresistive sensors (P > 0.05). Using mean pressure value, there was no significant difference between the front surface, back surface of the piezoresistive sensors, and PicoPress® (P > 0.05). Standard deviation was larger for the piezoresistive sensors than PicoPress® at any given pressure and this difference was more pronounced in the higher pressure range. Conclusion Piezoresistive sensor may represent a viable alternative to PicoPress® in interface pressure measurement.

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Shi, Yun Bo, Rui Rong Wang, Kang Du, and Jun Liu. "Research on Micromachined Gyroscope with Electrostatic Drive and Meso-Piezoresistive Detection." Advanced Materials Research 154-155 (October 2010): 119–23. http://dx.doi.org/10.4028/www.scientific.net/amr.154-155.119.

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In this paper, the structure design and operating principle is introduced to micromachined gyroscope with electrostatic drive and piezoresistive detection. In the paper, the piezoresistive effect of multi-barrier nano-film is used as detection method, which achieves high piezoresistive sensitivity compared with Silicon piezoresistive device. The gyroscope structure and multi-barrier nano-film device is fabricated by using heteroepitaxy GaAs film on Si substrate which implements the process compatible. The natural frequencies of gyroscope are determined from the modal analysis.

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Zhang, Jia Hong, Min Yang, Qing Quan Liu, Fang Gu, Min Li, and Yi Xian Ge. "Experimental Investigations on New Characterization Method for Giant Piezoresistance Effect and Silicon Nanowire Piezoresistive Detection." Key Engineering Materials 645-646 (May 2015): 881–87. http://dx.doi.org/10.4028/www.scientific.net/kem.645-646.881.

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This paper presents a novel and effective characterization method for giant piezoresistive properties of silicon nanowires by using the reference structures. This contrast detection approach investigates the influences of quantum size effect and surface defects effect on piezoresistive coefficients of silicon nanowires by direct comparison of the resistivity change ratio of silicon wires with nanoscale-to-microscale width under the same applied stress conditions. The characterization experiments based on four-point bending tensile test demonstrate that piezoresistive coefficient of small nanowidth silicon nanowire can be significantly increased to about five times higher levels than that of bulk silicon under the same impurity concentration, which indicates that the silicon nanowire can have giant piezoresistive effect. On the other hand, to solve the problem on nanowires pick-up, we proposed a nanowire piezoresistive detection approach, whose validity is confirmed by the dynamic LDV resonance test. Meanwhile, to investigate the influence of undercut arising from the wet chemical release process of the suspended silicon nanowire, a three-dimensional finite element simulation is also carried out for the fundamental resonant frequency using ANSYS software. The numerical and experimental results show that our piezoresistive detection is accurate and effective and the undercut should be carefully considered in the design of the high frequency resonator and mixer. The findings of this paper provide some useful references for the piezoresistive effect measurement and the piezoresistive pick-up in nanoelectromechanical system.

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Wohlgemuth, Christian, Peter Lotz, and Roland Werthschützky. "Fehlerkorrektur piezoresistiver Drucksensoren mit optimierter Kalibrierung des Signalwandlers (Error Correction of Piezoresistive Pressure Sensors by Optimised Signal Conditioner Calibration)." tm - Technisches Messen 72, no. 2-2005 (February 2005): 83–92. http://dx.doi.org/10.1524/teme.72.2.83.58566.

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Beddiaf, Abdelaziz, Fouad Kerrour, and Salah Kemouche. "A Numerical Model of Joule Heating in Piezoresistive Pressure Sensors." International Journal of Electrical and Computer Engineering (IJECE) 6, no. 3 (June 1, 2016): 1223. http://dx.doi.org/10.11591/ijece.v6i3.9869.

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Thermal drift caused by Joule heating in piezoresistive pressure sensors affects greatly the results in the shift of the offset voltage of the such sensors. The study of the thermal behavior of these sensors is essential to define the parameters that cause the output characteristic drift. The impact of Joule heating in a pressure sensor has been studied. The study involves the solution of heat transfer equation considering the conduction in Cartesian coordinates for the transient regime using Finite Difference Method. We determine how the temperature affects the sensor during the applying a supply voltage. For this, the temperature rise generated by Joule heating in piezoresistors has been calculated for different geometrical parameters of the sensor as well as for different operating time. It is observed that Joule heating leads to important rise temperature in the piezoresistor and, hence, causes drift in the output voltage variations in a sensor during its operated in a prolonged time. This paper put emphasis on the geometric influence parameters on these characteristics to optimize the sensor performance. The optimization of geometric parameters of sensor allows us to reducing the internal heating effect. Results showed also that low bias voltage should be applied for reducing Joule heating.

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Beddiaf, Abdelaziz, Fouad Kerrour, and Salah Kemouche. "A Numerical Model of Joule Heating in Piezoresistive Pressure Sensors." International Journal of Electrical and Computer Engineering (IJECE) 6, no. 3 (June 1, 2016): 1223. http://dx.doi.org/10.11591/ijece.v6i3.pp1223-1232.

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Thermal drift caused by Joule heating in piezoresistive pressure sensors affects greatly the results in the shift of the offset voltage of the such sensors. The study of the thermal behavior of these sensors is essential to define the parameters that cause the output characteristic drift. The impact of Joule heating in a pressure sensor has been studied. The study involves the solution of heat transfer equation considering the conduction in Cartesian coordinates for the transient regime using Finite Difference Method. We determine how the temperature affects the sensor during the applying a supply voltage. For this, the temperature rise generated by Joule heating in piezoresistors has been calculated for different geometrical parameters of the sensor as well as for different operating time. It is observed that Joule heating leads to important rise temperature in the piezoresistor and, hence, causes drift in the output voltage variations in a sensor during its operated in a prolonged time. This paper put emphasis on the geometric influence parameters on these characteristics to optimize the sensor performance. The optimization of geometric parameters of sensor allows us to reducing the internal heating effect. Results showed also that low bias voltage should be applied for reducing Joule heating.

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Zhang, Yue Xian, and Bin Li. "Effect of Conductive Silicone Rubber Fillers on Piezoresistive Properties." Advanced Materials Research 815 (October 2013): 588–93. http://dx.doi.org/10.4028/www.scientific.net/amr.815.588.

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Through the preparation of conductive silicone rubber samples, and the study of its electrical characteristics, this paper expounds the conductive silicone rubber composites relationship between the resistance and applied pressure. It discusses the main influencing factors of the piezoresistive effect. It studies conductive silicone rubber in four different conductive particles as well as the piezoresistive behavior of blending with a variety of fillers. It analyzes conductive silicone rubber samples after adding nanometer material of the piezoresistive properties. The study shows that blending with a variety of appropriate fillers material can improve the linearity of the piezoresistive relationship of the conductive silicon rubber and effectively expand the resistance variable range.

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Kim, Myoungsuk, Jaebong Jung, Sungmook Jung, Young Hoon Moon, Dae-Hyeong Kim, and Ji Hoon Kim. "Piezoresistive Behaviour of Additively Manufactured Multi-Walled Carbon Nanotube/Thermoplastic Polyurethane Nanocomposites." Materials 12, no. 16 (August 16, 2019): 2613. http://dx.doi.org/10.3390/ma12162613.

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To develop highly sensitive flexible pressure sensors, the mechanical and piezoresistive properties of conductive thermoplastic materials produced via additive manufacturing technology were investigated. Multi-walled carbon nanotubes (MWCNTs) dispersed in thermoplastic polyurethane (TPU), which is flexible and pliable, were used to form filaments. Specimens of the MWCNT/TPU composite with various MWCNT concentrations were printed using fused deposition modelling. Uniaxial tensile tests were conducted, while the mechanical and piezoresistive properties of the MWCNT/TPU composites were measured. To predict the piezoresistive behaviour of the composites, a microscale 3D resistance network model was developed. In addition, a continuum piezoresistive model was proposed for large-scale simulations.

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Wu, Min, Li Huang, Xiaoyu Zhang, Jianzhong Chen, and Yong Lv. "Two-Dimensional Piezoresistive Response and Measurement of Sensitivity Factor of Polymer-Matrix Carbon Fiber Mat." Polymers 12, no. 12 (December 21, 2020): 3072. http://dx.doi.org/10.3390/polym12123072.

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Based on the piezoresistive effect, the piezoresistive constitutive relation of a carbon fiber mat under orthogonal strain was deduced. Considering the Poisson effect, the piezoresistive responses and measurement of the sensitivity factor of a polymer-matrix carbon fiber mat under bidirectional strain were studied by a two-times uniaxial tension loading method in different directions, which was pasted in the center area of a cruciform aluminum substrate. The relations between the resistance change rate and the orthogonal strains were established, the reasonability of which was confirmed by comparison with the experimental results. The results show that the longitudinal piezoresistive sensitivity factor C11 is 21.55, and the lateral piezoresistive sensitivity factor C12 is 24.15. Using these factors, the resistance change rate of another polymer-matrix carbon mat was predicted, which was made by the same technique, and the error between the predicted and the experimental results was 1.3% in the longitudinal direction and 6.1% in the lateral direction.

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Guo, Rongxin, Yuxia Suo, Haiting Xia, Yang Yang, Qianmin Ma, and Feng Yan. "Study of Piezoresistive Behavior of Smart Cement Filled with Graphene Oxide." Nanomaterials 11, no. 1 (January 15, 2021): 206. http://dx.doi.org/10.3390/nano11010206.

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A cement-based piezoelectric composite, modified by graphene oxide (GO), was prepared to study piezoresistive capacity. The testing confirms that GO is more effective than other carbon nanomaterials at improving piezoresistive sensitivity of cement-based composites, because the content of GO in cement paste was much lower than other carbon nanomaterials used in previously published research. Further investigation indicates that the addition of GO significantly improved the stability and repeatability for piezoresistive capacity of cement paste under cycle loads. Based on experiment results, the piezoresistive sensitivity of this composite depended on GO content, water-to-cement weight ratio (w/c) and water-loss rate, since the highest piezoresistive gauge factor value (GF = 35) was obtained when GO content was 0.05 wt.%, w/c was 0.35 and water-loss rate was 3%. Finally, microstructure analysis confirmed that conductivity and piezoresistivity were achieved through a tunneling effect and by contacting conduction that caused deformation of GO networks in the cement matrix.

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Lu, Xue Bin, Lin Hai Cui, and Hai Huang. "Piezoresistive and Mechanics Properties of Nanopolycrystalline Silicon Film Materials." Applied Mechanics and Materials 380-384 (August 2013): 4237–40. http://dx.doi.org/10.4028/www.scientific.net/amm.380-384.4237.

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The polycrystalline silicon films with same doping concentration and different thickness were prepared by low pressure chemical vapor deposition. The gauge factors of the films samples were tested, the results show that the piezoresistive properties of nanopolycrystalline silicon film (NPSF) exceed that of common polycrystalline silicon film (CPSF). To apply the NPSF to MEMS piezoresistive device effectively, the Youngs modulus of the NPSF were tested by in-situ nanomechanical test system, the results show that the Youngs modulus of the NPSF is about between 155GPa and 158GPa. It is very useful to investigate the piezoresistive and mechanics properties of NPSF, the results show that NPSF is a suitable material in MEMS piezoresistive device.

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Chen, Jinyan, Van-Thai Tran, Hejun Du, Junshan Wang, and Chao Chen. "A Direct-Writing Approach for Fabrication of CNT/Paper-Based Piezoresistive Pressure Sensors for Airflow Sensing." Micromachines 12, no. 5 (April 30, 2021): 504. http://dx.doi.org/10.3390/mi12050504.

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Airflow sensor is a crucial component for monitoring environmental airflow conditions in many engineering fields, especially in the field of aerospace engineering. However, conventional airflow sensors have been suffering from issues such as complexity and bulk in structures, high cost in fabrication and maintenance, and low stability and durability. In this work, we developed a facile direct-writing method for fabricating a low-cost piezoresistive element aiming at high-performance airflow sensing, in which a commercial pen was utilized to drop solutions of single-walled carbon nanotubes onto tissue paper to form a piezoresistive sensing element. The encapsulated piezoresistive element was tested for electromechanical properties under two loading modes: one loading mode is the so-called pressure mode in which the piezoresistive element is pressed by a normal pressure, and another mode is the so-called bending mode in which the piezoresistive element is bended as a cantilever beam. Unlike many other developed airflow sensors among which the sensing elements are normally employed as cantilever beams for facing winds, we designed a fin structure to be incorporated with the piezoresistive element for airflow sensing; the main function of the fin is to face winds instead of the piezoresistive element, and subsequently transfer and enlarge the airflow pressure to the piezoresistive element for the normal pressure loading mode. With this design, the piezoresistive element can also be protected by avoiding experiencing large strains and direct contact with external airflows so that the stability and durability of the sensor can be maintained. Moreover, we experimentally found that the performance parameters of the airflow sensor could be effectively tuned by varying the size of the fin structure. When the fin sizes of the airflow sensors were 20 mm, 30 mm, and 40 mm, the detection limits and sensitivities of the fabricated airflow sensors were measured as 8.2 m/s, 6.2 m/s, 3.2 m/s, 0.0121 (m/s)−2, 0.01657 (m/s)−2, and 0.02264 (m/s)−2, respectively. Therefore, the design of the fin structure could pave an easy way for adjusting the sensor performance without changing the sensor itself toward different application scenarios.

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Pommois, Romain, Gaku Furusawa, Takuya Kosuge, Shun Yasunaga, Haruki Hanawa, Hidetoshi Takahashi, Tetsuo Kan, and Hisayuki Aoyama. "Micro Water Flow Measurement Using a Temperature-Compensated MEMS Piezoresistive Cantilever." Micromachines 11, no. 7 (June 30, 2020): 647. http://dx.doi.org/10.3390/mi11070647.

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In this study, we propose a microelectromechanical system (MEMS) force sensor for microflow measurements. The sensor is equipped with a flow sensing piezoresistive cantilever and a dummy piezoresistive cantilever, which acts as a temperature reference. Since the dummy cantilever is also in the form of a thin cantilever, the temperature environment of the dummy sensor is almost identical to that of the sensing cantilever. The temperature compensation effect was measured, and the piezoresistive cantilever was combined with a gasket jig to enable the direct implementation of the piezoresistive cantilever in a flow tube. The sensor device stably measured flow rates from 20 μL/s to 400 μL/s in a silicon tube with a 2-mm inner diameter without being disturbed by temperature fluctuations.

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Choi, Dae Keun, and Sang Hoon Lee. "Fabrication and Evaluation of Flowmeter with Focused-Ion-Beam System." Applied Mechanics and Materials 389 (August 2013): 324–29. http://dx.doi.org/10.4028/www.scientific.net/amm.389.324.

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In this paper, we fabricated and evaluated the piezoresistive type flowmeter with focused-ion-beam (FIB) system. The flowmeter body is made up of the low stress silicon nitride, and the nanometer sized piezoresistive layer is deposited with FIB system for the smaller measuring area. The flowmeter is evaluated in the wind tunnel, and the 0~4m/s air flows are applied. Although the sensitivity, ΔR/R shows the negative behavior unlike the conventional piezoresistive layer due to the added materials during the FIB process, the measurement results show the ΔR/R has a suitable sensitivity (-1.04E-2/ms-1) and a rapid response time (0.8sec). Those results represent the fabricated piezoresistive type air flowmeter has the possibility for the small area detection.

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Oerke, Alexa, Christina König, Stephanus Büttgenbach, and Andreas Dietzel. "Investigation of Different Piezoresistive Materials to be Integrated into Micromechanical Force Sensors Based on SU 8 Photoresist." Key Engineering Materials 613 (May 2014): 244–50. http://dx.doi.org/10.4028/www.scientific.net/kem.613.244.

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The aim of this scientific work is to present different piezoresistive materials suitable to be integrated into micromechanical force sensors. As material for the mechanical structure of the sensors SU-8 has been chosen because it features favorable characteristics, such as flexible and simple fabrication of micro components through the use of standard UV lithography for forming three dimensional geometries such as cantilevers and membranes. In addition, on the basis of a significantly lower Young’s modulus compared to silicon, great opportunities to improve the force sensitivity of such sensors are offered by SU-8.However, SU-8 photoresist does not have piezoresistive properties, and therefore it has to be combined with an additional, beneficial piezoresistive material. A well-controlled and frequently used material for piezoresistive elements is doped silicon. This paper provides an overview of characteristics such as gauge factor and temperature coefficient of resistance (TCR) for a variety of commonly used piezoresistive materials, namely metals, silicon, conductive composite materials and diamond-like carbon. As a characteristic factor for the estimated sensitivity of the force sensor, the ratio of the gauge factor k to the Young´s modulus E of the structural material is presented for the different material combinations. A classification of conventional silicon based tactile force sensors is made to build a basis for comparison. Furthermore the suitability of different piezoresistive materials for the integration into an SU 8-based sensor is investigated.

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Ye, Jinhua, Zhengkang Lin, Jinyan You, Shuheng Huang, and Haibin Wu. "Inconsistency Calibrating Algorithms for Large Scale Piezoresistive Electronic Skin." Micromachines 11, no. 2 (February 3, 2020): 162. http://dx.doi.org/10.3390/mi11020162.

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In the field of safety and communication of human-robot interaction (HRI), using large-scale electronic skin will be the tendency in the future. The force-sensitive piezoresistive material is the key for piezoresistive electronic skin. In this paper, a non-array large scale piezoresistive tactile sensor and its corresponding calibration methods were presented. Because of the creep inconsistency of large scale piezoresistive material, a creep tracking compensation method based on K-means clustering and fuzzy pattern recognition was proposed to improve the detection accuracy. With the compensated data, the inconsistency and nonlinearity of the sensor was calibrated. The calibration process was divided into two parts. The hierarchical clustering algorithm was utilized firstly to classify and fuse piezoresistive property of different regions over the whole sensor. Then, combining the position information, the force detection model was constructed by Back-Propagation (BP) neural network. At last, a novel flexible tactile sensor for detecting contact position and force was designed as an example and tested after being calibrated. The experimental results showed that the calibration methods proposed were effective in detecting force, and the detection accuracy was improved.

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Lu, Xuebin, Rui Weng, Xiaowei Han, Bin Yu, and Bing Yang. "Electrical Trimming Characteristics of Polysilicon Nanofilms with Different Doping Concentrations and Deposition Temperatures." Journal of Nanomaterials 2020 (February 24, 2020): 1–11. http://dx.doi.org/10.1155/2020/7379867.

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Polysilicon nanofilm (PSNF) can provide a large gauge factor and good temperature stability, which promotes their application in piezoresistive sensing devices. Electrical trimming is necessary to further improve the stability and matching of piezoresistive resistors after sensor fabrication. The advantages of PSNF are realized by first preparing PSNF samples with different doping concentrations and deposition temperatures. By applying an incremental DC current that is higher than the threshold current of the PSNF resistors, the PSNF resistors are trimmed and the resistance changes are measured. The results of electrical trimming show that the threshold current, trimming rate, and trimming error are related to the doping concentration and deposition temperature. According to tunneling piezoresistive theory and the interstitial-vacancy pair model, the experimental results are expounded. These results are useful for the design and fabrication of PSNF piezoresistive sensors.

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Obitayo, Waris, and Tao Liu. "A Review: Carbon Nanotube-Based Piezoresistive Strain Sensors." Journal of Sensors 2012 (2012): 1–15. http://dx.doi.org/10.1155/2012/652438.

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The use of carbon nanotubes for piezoresistive strain sensors has acquired significant attention due to its unique electromechanical properties. In this comprehensive review paper, we discussed some important aspects of carbon nanotubes for strain sensing at both the nanoscale and macroscale. Carbon nanotubes undergo changes in their band structures when subjected to mechanical deformations. This phenomenon makes them applicable for strain sensing applications. This paper signifies the type of carbon nanotubes best suitable for piezoresistive strain sensors. The electrical resistivities of carbon nanotube thin film increase linearly with strain, making it an ideal material for a piezoresistive strain sensor. Carbon nanotube composite films, which are usually fabricated by mixing small amounts of single-walled or multiwalled carbon nanotubes with selected polymers, have shown promising characteristics of piezoresistive strain sensors. Studies also show that carbon nanotubes display a stable and predictable voltage response as a function of temperature.

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Martins, L. F., C. S. Silva, B. Mendes, M. Azevedo, A. J. Pontes, and L. A. Rocha. "Piezoresistive Polymer Accelerometer." Procedia Engineering 87 (2014): 1477–80. http://dx.doi.org/10.1016/j.proeng.2014.11.736.

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Rangelow, I. W., P. Grabiec, T. Gotszalk, and K. Edinger. "Piezoresistive SXM sensors." Surface and Interface Analysis 33, no. 2 (2002): 59–64. http://dx.doi.org/10.1002/sia.1162.

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Ghemari, Zine, Fethi Chouaf, and Salah Saad. "New Formula for the Piezoresistive Accelerometer Motion Acceleration and Experimental Validation." Journal of Advanced Manufacturing Systems 16, no. 01 (February 6, 2017): 57–65. http://dx.doi.org/10.1142/s0219686717500044.

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A piezoresistive accelerometer is the first element of a vibration measurement chain, and its improvement can enhance measurement quality. In this paper, we have developed a new formula that links the movement acceleration as a function of the natural frequency and the damping rate of the piezoresistive accelerometer in first time, and movement acceleration as a function of the measurement error in second time. This model allows the decrease of the acceleration measurement error and increases the accelerometer accuracy by choosing the right damping rate and frequency range. Finally, this new formula allows proposing new parameters for more accurate and reliable piezoresistive accelerometer.

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Hassan, Hashim, and Tyler N. Tallman. "Failure prediction in self-sensing nanocomposites via genetic algorithm-enabled piezoresistive inversion." Structural Health Monitoring 19, no. 3 (July 16, 2019): 765–80. http://dx.doi.org/10.1177/1475921719863062.

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Conductive nanocomposites have been explored extensively for structural health monitoring (SHM) due to their self-sensing nature via the piezoresistive effect. Combined with a non-invasive conductivity imaging modality such as electrical impedance tomography (EIT), piezoresistivity is a powerful tool for SHM. To date, however, the combination of the piezoresistive effect and EIT has been limited to just damage detection. From a SHM perspective, it may be more beneficial to pre-emptively predict failure before it occurs. To that end, we propose a novel methodology for failure prediction in nanocomposites using piezoresistive inversion. Our approach makes use of a genetic algorithm (GA) to determine the mechanical state of the structure using conductivity changes observed via EIT. First, a rectangular nanocomposite specimen with a central hole is manufactured. Second, the specimen is loaded in tension to induce stress concentrations near the hole. Third, EIT is used to image the resulting stress concentration-induced conductivity changes near the hole. Fourth, GA-enabled piezoresistive inversion is implemented to determine the underlying displacements from the observed conductivity changes. The strains are then determined from kinematic relations and the stresses from constitutive relations. Lastly, a failure criterion is used to predict failure. By validating our results with finite element analysis and digital image correlation, we demonstrate that the proposed approach can accurately predict the onset of failure and therefore enable unprecedented SHM capabilities in piezoresistive nanocomposites.

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Yu, Huijun, Peng Zhou, Kewei Wang, Yanfei Huang, and Wenjiang Shen. "Optimization of MOEMS Projection Module Performance with Enhanced Piezoresistive Sensitivity." Micromachines 11, no. 7 (June 30, 2020): 651. http://dx.doi.org/10.3390/mi11070651.

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In scanning laser projection systems, the laser modulation time is important for the projection resolution. The modulation time needs to be matched with the motion of the micromirror. For this paper, the piezoresistive sensor was integrated on the torsion beam of the micromirror to monitor the physical position of the micromirror. The feedback signal was used to generate the zero-crossing time, which was used to estimate the physical position of the resonating mirror over time. The estimated position was affected by the zero-crossing time and the error directly influenced the definition of the projected image. By reducing the impurity concentration from 3 × 1018/cm3 to 1 × 1018/cm3 and increasing shear stress on piezoresistive sensor, the sensitivity of the piezoresistive sensor increased from 4.4 mV/V° to 6.4 mV/V° and the error of the image pixel reduced from 1.5 pixels to 0.5 pixels. We demonstrated that the image quality of an Optical-Microeletromechanical Systems (MOEMS) laser projection could be improved by enhancing the sensitivity of the piezoresistive sensor.

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Chi, Yung-Wei, Ray Lin, Kuo-Hao Tseng, and Blythe Durbin-Johnson. "Effect of subsurface pressure on the interface pressure measurement in an in vitro experiment." Phlebology: The Journal of Venous Disease 35, no. 2 (June 24, 2019): 134–38. http://dx.doi.org/10.1177/0268355519857627.

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Introduction It was hypothesized that subsurface pressure (mimicking subcutaneous pressure) variation may affect interface pressure measurement. Method BISCO® (Rogers, CT) foam was placed on a cylinder cuff model for the experiment. Picopress® and a piezoresistive sensor were used for interface pressure measurement. External pressure was applied using an automated pressure cuff at 40 mmHg. Subsurface pressure mimicking subcutaneous pressure from 3 mmHg to 12 mmHg was generated by a pressure pump underneath the foam. Interface pressure was compared between the true pressure, 40 mmHg, versus Picopress® and the piezoresistive sensor using linear mixed effect model (SAS software, version 9.4, SAS Institute, Cary, NC). Result Interface pressure measurement using Picopress® did not differ between the incremental subsurface pressures (mean 45.4 ± 0.4) ( P = 0.54), in contrast to piezoresistive sensor, which demonstrated a difference (mean 42.65 ± 2.7) ( P < 0.001). This difference appeared to be linearly related. Conclusion Subsurface pressure mimicking subcutaneous pressure may affect the overall interface pressure measurement according to the piezoresistive sensor but not Picopress®.

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Lwo, Ben-Je, Tung-Sheng Chen, Ching-Hsing Kao, and Yu-Lin Lin. "In-Plane Packaging Stress Measurements Through Piezoresistive Sensors." Journal of Electronic Packaging 124, no. 2 (May 2, 2002): 115–21. http://dx.doi.org/10.1115/1.1452244.

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In our previous works, the piezoresistive sensors have been demonstrated to be accurate and efficient tools for stress measurements in microelectronic packaging. In this study, we first designed test chips with piezoresistive stress sensors, temperature sensors as well as heats, and the test wafers were next manufactured through commercialized IC processes. Piezoresistive sensors on silicon strips, which were cut directly from silicon wafers at a specific angle, were then calibrated, and highly consistent piezoresistive coefficients were extracted at various wafer sites so that both normal and shear stress on the test chips can be measured. Finally, we packaged the test chips into 100-pin PQFP structures with different batches and measured internal stresses on the test chips inside the packaging. After measuring packaging induced stresses as well as thermal stresses on several batches of PQFPs, it was found that the normal stress diversities were obvious from different batches of the packaging structure, and the shearing stresses were approximately zero in all of the PQFPs at different chip site.

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Journal articles on the topic 'Piezoresistiv'

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