Log in

Relevant bibliographies by topics / Piezoresistive coefficients

Contents

Journal articles
Dissertations / Theses
Book chapters
Conference papers

Academic literature on the topic 'Piezoresistive coefficients'

Author: Grafiati

Published: 19 February 2023

Last updated: 20 February 2023

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the lists of relevant articles, books, theses, conference reports, and other scholarly sources on the topic 'Piezoresistive coefficients.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Journal articles on the topic "Piezoresistive coefficients"

1

Sugiura, Takaya, Naoki Takahashi, and Nobuhiko Nakano. "Evaluation of p-Type 4H-SiC Piezoresistance Coefficients in (0001) Plane Using Numerical Simulation." Materials Science Forum 1004 (July 2020): 249–55. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.249.

Full text

Abstract:

A numerical simulation of p-type 4H-Silicon Carbide (4H-SiC) piezoresistance coefficients in (0001) plane evaluation is shown in this study. A 4H-SiC material has outstanding material characteristics of wide band-gap of 3.26 eV and high temperature robustness. However, many material properties of 4H-SiC material are still unknown, including piezoresistance coefficients. Piezoresistive effect is resistivity change when mechanical stress is applied to the material. Piezoresistance coefficients express the magnitude of this effect, important for designing a mechanical stress sensor. In this study

APA, Harvard, Vancouver, ISO, and other styles

2

Mayer, Michael, Oliver Paul, and Henry Baltes. "Complete set of piezoresistive coefficients of CMOS -diffusion." Journal of Micromechanics and Microengineering 8, no. 2 (1998): 158–60. http://dx.doi.org/10.1088/0960-1317/8/2/029.

Full text

APA, Harvard, Vancouver, ISO, and other styles

3

Phan, Hoang-Phuong, Afzaal Qamar, Dzung Viet Dao, et al. "Orientation dependence of the pseudo-Hall effect in p-type 3C–SiC four-terminal devices under mechanical stress." RSC Advances 5, no. 69 (2015): 56377–81. http://dx.doi.org/10.1039/c5ra10144a.

Full text

APA, Harvard, Vancouver, ISO, and other styles

4

Zhang, Jia Hong, Min Yang, Qing Quan Liu, Fang Gu, Min Li, and Yi Xian Ge. "Experimental Investigations on New Characterization Method for Giant Piezoresistance Effect and Silicon Nanowire Piezoresistive Detection." Key Engineering Materials 645-646 (May 2015): 881–87. http://dx.doi.org/10.4028/www.scientific.net/kem.645-646.881.

Full text

Abstract:

This paper presents a novel and effective characterization method for giant piezoresistive properties of silicon nanowires by using the reference structures. This contrast detection approach investigates the influences of quantum size effect and surface defects effect on piezoresistive coefficients of silicon nanowires by direct comparison of the resistivity change ratio of silicon wires with nanoscale-to-microscale width under the same applied stress conditions. The characterization experiments based on four-point bending tensile test demonstrate that piezoresistive coefficient of small nanow

APA, Harvard, Vancouver, ISO, and other styles

5

Phan, Hoang-Phuong, Dzung Viet Dao, Philip Tanner, et al. "Fundamental piezoresistive coefficients of p-type single crystalline 3C-SiC." Applied Physics Letters 104, no. 11 (2014): 111905. http://dx.doi.org/10.1063/1.4869151.

Full text

APA, Harvard, Vancouver, ISO, and other styles

6

Lwo, Ben-Je, Tung-Sheng Chen, Ching-Hsing Kao, and Yu-Lin Lin. "In-Plane Packaging Stress Measurements Through Piezoresistive Sensors." Journal of Electronic Packaging 124, no. 2 (2002): 115–21. http://dx.doi.org/10.1115/1.1452244.

Full text

Abstract:

In our previous works, the piezoresistive sensors have been demonstrated to be accurate and efficient tools for stress measurements in microelectronic packaging. In this study, we first designed test chips with piezoresistive stress sensors, temperature sensors as well as heats, and the test wafers were next manufactured through commercialized IC processes. Piezoresistive sensors on silicon strips, which were cut directly from silicon wafers at a specific angle, were then calibrated, and highly consistent piezoresistive coefficients were extracted at various wafer sites so that both normal and

APA, Harvard, Vancouver, ISO, and other styles

7

Yan, Chao, Jian Ning Ding, Zong Xing Li, and Chao Min Mao. "Digital Calibration for Current-Loop Output of Piezoresistive Sensors." Advanced Materials Research 143-144 (October 2010): 744–48. http://dx.doi.org/10.4028/www.scientific.net/amr.143-144.744.

Full text

Abstract:

The precision of piezoresistive sensors is low between wide temperature range .The conditioning result isn’t ideal by analog approaches. Also the efficiency is very low. To improve this condition , a digital approach is introduced. It coverts sensors’ analog signal to digital value, and then uses polynomial and coefficients stored in singlechip to correct the digital value. At last , the singlechip coverts corrected digital value to analog signal to output. Its conditioning principle and calibration process is also described. We realized 4-to-20mA-current-loop-output of piezoresistive sensors

APA, Harvard, Vancouver, ISO, and other styles

8

Song, Weixia, and Eero Ristolainen. "Calibration Improvement for Piezoresistive Coefficients of Stress Sensors on (100) Silicon." Physica Scripta T114 (January 1, 2004): 205–8. http://dx.doi.org/10.1088/0031-8949/2004/t114/052.

Full text

APA, Harvard, Vancouver, ISO, and other styles

9

Pham, A. T., C. Jungemann, and B. Meinerzhagen. "Modeling and validation of piezoresistive coefficients in Si hole inversion layers." Solid-State Electronics 53, no. 12 (2009): 1325–33. http://dx.doi.org/10.1016/j.sse.2009.09.018.

Full text

APA, Harvard, Vancouver, ISO, and other styles

10

Jaeger, R. C., J. C. Suhling, M. T. Carey, and R. W. Johnson. "Off-axis sensor rosettes for measurement of the piezoresistive coefficients of silicon." IEEE Transactions on Components, Hybrids, and Manufacturing Technology 16, no. 8 (1993): 925–31. http://dx.doi.org/10.1109/33.273694.

Full text

APA, Harvard, Vancouver, ISO, and other styles

Dissertations / Theses on the topic "Piezoresistive coefficients"

1

Cho, Chun Hyung Jaeger Richard C. Suhling J. C. "Experimental characterization of the temperature dependence of the piezoresistive coefficients of silicon." Auburn, Ala., 2007. http://repo.lib.auburn.edu/Send%2002-04-08/CHO_CHUN_21.pdf.

Full text

APA, Harvard, Vancouver, ISO, and other styles

2

Phan, Hoang-Phuong. "The Piezoresistive Effect of p-type Single Crystalline 3C-SiC for Mechanical Sensors." Thesis, Griffith University, 2016. http://hdl.handle.net/10072/366955.

Full text

Abstract:

Silicon carbide (SiC) is a promising material for electronic devices operating at high temperatures, thanks to its large energy band gap, superior mechanical prop- erties and excellent chemical inertness. Among various poly types of SiC, cubic single crystalline silicon carbide (3C-SiC) is considered to be the most suitable poly type for MEMS applications, as it can be grown on a Si substrate which is com- patible with the conventional MEMS process and reduces the cost of SiC wafers. Studies on the piezoresistive effect of 3C-SiC are of great interest for developing mechanical sensors such as

APA, Harvard, Vancouver, ISO, and other styles

Book chapters on the topic "Piezoresistive coefficients"

1

Shahinpoor, Mohsen. "Review of Piezoresistive Materials as Smart Sensors." In Fundamentals of Smart Materials. The Royal Society of Chemistry, 2020. http://dx.doi.org/10.1039/bk9781782626459-00025.

Full text

Abstract:

Chapter 3 reviews piezoresistive materials as smart sensors. Piezoresistivity is defined as a property of certain materials, such as metals and semiconductors, for which the materials electrical resistance changes purely due to mechanical pressure, stress, force, acceleration, strain, and stress. It is the physical property of certain materials which has been widely used to convert a mechanical signal into an electrical signal in smart sensors, accelerometers, tactile sensors, strain gauges, and flow meters and similar devices and microdevices. Metals do not exhibit piezoresistivity as they do not have a bandgap. The resistance of strained metal samples changes due to dimensional changes – this may not be considered as piezo-resistivity. The unit of piezoresistivity is ohm-meter or symbolically Ω–m. Metals and semiconducting materials exhibit such a property. The piezoresistive effect in semiconductors is generally several orders of magnitudes larger than the geometrical effect. This effect is present in semiconductors such as germanium, amorphous silicon, polycrystalline silicon, and silicon carbide, among others. Hence, semiconductor strain gauges with a very high coefficient of sensitivity can be designed, built and operated and utilized in various smart sensor applications and as microelectromechanical (MEMs) or nanoelectromechanical (NEMs) devices and systems.

APA, Harvard, Vancouver, ISO, and other styles

Conference papers on the topic "Piezoresistive coefficients"

1

Pelloux-Prayer, J., M. Casse, S. Barraud, J. L. Rouviere, and G. Reimbold. "Characterization of piezoresistive coefficients in silicon nanowire transistors." In 2014 15th International Conference on Ultimate Integration on Silicon (ULIS). IEEE, 2014. http://dx.doi.org/10.1109/ulis.2014.6813903.

Full text

APA, Harvard, Vancouver, ISO, and other styles

2

Larsen, Gerrit T., Larry L. Howell, and Brian D. Jensen. "Integrated Piezoresistive Flexure Model in Polysilicon." In ASME 2011 International Design Engineering Technical Conferences and Computers and Information in Engineering Conference. ASMEDC, 2011. http://dx.doi.org/10.1115/detc2011-47902.

Full text

Abstract:

This paper presents a new model and test device for determining piezoresistive response in long, thin polysilicon beams with axial and bending moment inducing loads. If the piezoresistive coefficients are known, the Integrated Piezoresistive Flexure Model (IPFM) is used to find the new resistance of a beam under stress. The IPFM first discretizes the beam into small volumes represented by resistors. The stress that each of these volumes experiences is calculated, and the stress is used to change the resistance of the representative resistors according to a second-order piezoresistive equation.

APA, Harvard, Vancouver, ISO, and other styles

3

Pham, A. T., C. Jungemann, and B. Meinerzhagen. "Modeling of piezoresistive coefficients in Si hole inversion layers." In 2009 10th International Conference on Ultimate Integration on Silicon (ULIS. IEEE, 2009. http://dx.doi.org/10.1109/ulis.2009.4897553.

Full text

APA, Harvard, Vancouver, ISO, and other styles

4

Cho, Chun-Hyung, Richard C. Jaeger, Jeffrey C. Suhling, and M. Kaysar Rahim. "Chip-on-Beam and Hydrostatic Calibration of the Piezoresistive Coefficients on (111) Silicon." In ASME 2007 InterPACK Conference collocated with the ASME/JSME 2007 Thermal Engineering Heat Transfer Summer Conference. ASMEDC, 2007. http://dx.doi.org/10.1115/ipack2007-33570.

Full text

Abstract:

Stress sensing test chips are used to investigate die stresses arising from assembly and packaging operations. The chips incorporate resistor or transistor sensing elements that are able to measure stresses via the observation of the changes in their resistivity/mobility. The piezoresistive behavior of such sensors is characterized by three piezoresistive (pi) coefficients, which are electro-mechanical material constants. Stress sensors fabricated on the surface of the (111) silicon wafers offer the advantage of being able to measure the complete stress state compared to such sensors fabricate

APA, Harvard, Vancouver, ISO, and other styles

5

Chen, Jun, Jing Wu, Jeffrey C. Suhling, and Richard C. Jaeger. "Hydrostatic Calibration of the Piezoresistive Coefficients on 4H Silicon Carbide." In 2021 20th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (iTherm). IEEE, 2021. http://dx.doi.org/10.1109/itherm51669.2021.9503213.

Full text

APA, Harvard, Vancouver, ISO, and other styles

6

Kang, Y., A. K. M. Mian, J. C. Suhling, and R. C. Jaeger. "Hydrostatic Response of Piezoresistive Stress Sensors." In ASME 1997 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 1997. http://dx.doi.org/10.1115/imece1997-1224.

Full text

Abstract:

Abstract The (111) surface of silicon offers unique advantages for fabrication of piezoresistive stress sensors. Resistive sensor elements fabricated on this particular surface respond to all six components comprising the state of stress. Hence, a multi-element rosette has the capability of measuring the complete stress state at a point in the material. To extract the stress state at points on the die from the resistance changes measured with the sensor rosettes, it is necessary to have accurately calibrated values of six piezoresistive coefficients. Four-point bending and wafer-level calibrat

APA, Harvard, Vancouver, ISO, and other styles

7

Cho, Chun-Hyung, Richard C. Jaeger, and Jeffrey C. Suhling. "Characterization of the Piezoresistive Coefficients of (100) Silicon From −150 to +125C." In ASME 2007 InterPACK Conference collocated with the ASME/JSME 2007 Thermal Engineering Heat Transfer Summer Conference. ASMEDC, 2007. http://dx.doi.org/10.1115/ipack2007-33053.

Full text

Abstract:

Stress sensing test chips are widely utilized to investigate integrated circuit die stresses arising from assembly and packaging operations. The test chips incorporate resistor or transistor sensing elements that are able to measure stresses by observing the changes in their resistivity or carrier mobility. This piezoresistive behavior of such sensors is characterized by three piezoresistive coefficients, which are electro-mechanical material constants. We are interested in stress characterization over a very broad range of temperatures. However, the literature provides limited data over the d

APA, Harvard, Vancouver, ISO, and other styles

8

Hussain, Safina, Richard C. Jaeger, and Jeffrey C. Suhling. "Current dependence of the piezoresistive coefficients of CMOS FETs on (100) silicon." In ESSDERC 2014 - 44th European Solid State Device Research Conference. IEEE, 2014. http://dx.doi.org/10.1109/essderc.2014.6948761.

Full text

APA, Harvard, Vancouver, ISO, and other styles

9

Chen, Jun, R. C. Jaeger, and J. C. Suhling. "Piezoresistive Theory for 4H Silicon Carbide Stress Sensors on Four-Degree Off-Axis Wafers." In ASME 2019 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems. American Society of Mechanical Engineers, 2019. http://dx.doi.org/10.1115/ipack2019-6461.

Full text

Abstract:

Abstract Piezoresistive stress sensors have been shown to be a powerful tool for experimental evaluation of die stress distributions. Silicon Carbide (SiC) wide bandgap semiconductors are promising materials for development of high temperature power electronics. In the past, the analysis and design of stress sensors on silicon carbide have assumed that the wafer surface is aligned with the crystallographic axes. However, 4H silicon carbide wafers are produced with a four-degree off-axis cut to ensure high-quality homoepitaxial growth, so that the tilted wafer surface does not perfectly coincid

APA, Harvard, Vancouver, ISO, and other styles

10

Chen, Jun, Jeffrey C. Suhling, and Richard C. Jaeger. "Measurement of the Temperature Dependence of the Piezoresistive Coefficients of 4H Silicon Carbide." In 2020 19th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm). IEEE, 2020. http://dx.doi.org/10.1109/itherm45881.2020.9190334.

Full text

APA, Harvard, Vancouver, ISO, and other styles

We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!