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Relevant bibliographies by topics / Piezoresistive coefficients

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Academic literature on the topic 'Piezoresistive coefficients'

Author: Grafiati

Published: 19 February 2023

Last updated: 20 February 2023

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Journal articles on the topic "Piezoresistive coefficients"

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Sugiura, Takaya, Naoki Takahashi, and Nobuhiko Nakano. "Evaluation of p-Type 4H-SiC Piezoresistance Coefficients in (0001) Plane Using Numerical Simulation." Materials Science Forum 1004 (July 2020): 249–55. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.249.

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A numerical simulation of p-type 4H-Silicon Carbide (4H-SiC) piezoresistance coefficients in (0001) plane evaluation is shown in this study. A 4H-SiC material has outstanding material characteristics of wide band-gap of 3.26 eV and high temperature robustness. However, many material properties of 4H-SiC material are still unknown, including piezoresistance coefficients. Piezoresistive effect is resistivity change when mechanical stress is applied to the material. Piezoresistance coefficients express the magnitude of this effect, important for designing a mechanical stress sensor. In this study, reported piezoresistance coefficients of p-type 4H-SiC in (0001) plane is evaluated based on numerical simulation. The simulated results of Gauge Factor (GF) values (determined by (ΔR/R)/ε (R is the resistance and ε is the strain of material)) well matched to the theoretical GF values (determined by πE (π is the piezoresistance coefficient and E is Young’s modulus of the material)), shows that reported piezoresistance coefficients are reliable. Also, the internal mappings of piezoresistive effect from the numerical simulation are shown, useful to understand piezoresistive effect which is difficult to see by experimental results.

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Mayer, Michael, Oliver Paul, and Henry Baltes. "Complete set of piezoresistive coefficients of CMOS -diffusion." Journal of Micromechanics and Microengineering 8, no. 2 (June 1, 1998): 158–60. http://dx.doi.org/10.1088/0960-1317/8/2/029.

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Phan, Hoang-Phuong, Afzaal Qamar, Dzung Viet Dao, Toan Dinh, Li Wang, Jisheng Han, Philip Tanner, Sima Dimitrijev, and Nam-Trung Nguyen. "Orientation dependence of the pseudo-Hall effect in p-type 3C–SiC four-terminal devices under mechanical stress." RSC Advances 5, no. 69 (2015): 56377–81. http://dx.doi.org/10.1039/c5ra10144a.

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Zhang, Jia Hong, Min Yang, Qing Quan Liu, Fang Gu, Min Li, and Yi Xian Ge. "Experimental Investigations on New Characterization Method for Giant Piezoresistance Effect and Silicon Nanowire Piezoresistive Detection." Key Engineering Materials 645-646 (May 2015): 881–87. http://dx.doi.org/10.4028/www.scientific.net/kem.645-646.881.

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This paper presents a novel and effective characterization method for giant piezoresistive properties of silicon nanowires by using the reference structures. This contrast detection approach investigates the influences of quantum size effect and surface defects effect on piezoresistive coefficients of silicon nanowires by direct comparison of the resistivity change ratio of silicon wires with nanoscale-to-microscale width under the same applied stress conditions. The characterization experiments based on four-point bending tensile test demonstrate that piezoresistive coefficient of small nanowidth silicon nanowire can be significantly increased to about five times higher levels than that of bulk silicon under the same impurity concentration, which indicates that the silicon nanowire can have giant piezoresistive effect. On the other hand, to solve the problem on nanowires pick-up, we proposed a nanowire piezoresistive detection approach, whose validity is confirmed by the dynamic LDV resonance test. Meanwhile, to investigate the influence of undercut arising from the wet chemical release process of the suspended silicon nanowire, a three-dimensional finite element simulation is also carried out for the fundamental resonant frequency using ANSYS software. The numerical and experimental results show that our piezoresistive detection is accurate and effective and the undercut should be carefully considered in the design of the high frequency resonator and mixer. The findings of this paper provide some useful references for the piezoresistive effect measurement and the piezoresistive pick-up in nanoelectromechanical system.

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Phan, Hoang-Phuong, Dzung Viet Dao, Philip Tanner, Li Wang, Nam-Trung Nguyen, Yong Zhu, and Sima Dimitrijev. "Fundamental piezoresistive coefficients of p-type single crystalline 3C-SiC." Applied Physics Letters 104, no. 11 (March 17, 2014): 111905. http://dx.doi.org/10.1063/1.4869151.

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Lwo, Ben-Je, Tung-Sheng Chen, Ching-Hsing Kao, and Yu-Lin Lin. "In-Plane Packaging Stress Measurements Through Piezoresistive Sensors." Journal of Electronic Packaging 124, no. 2 (May 2, 2002): 115–21. http://dx.doi.org/10.1115/1.1452244.

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In our previous works, the piezoresistive sensors have been demonstrated to be accurate and efficient tools for stress measurements in microelectronic packaging. In this study, we first designed test chips with piezoresistive stress sensors, temperature sensors as well as heats, and the test wafers were next manufactured through commercialized IC processes. Piezoresistive sensors on silicon strips, which were cut directly from silicon wafers at a specific angle, were then calibrated, and highly consistent piezoresistive coefficients were extracted at various wafer sites so that both normal and shear stress on the test chips can be measured. Finally, we packaged the test chips into 100-pin PQFP structures with different batches and measured internal stresses on the test chips inside the packaging. After measuring packaging induced stresses as well as thermal stresses on several batches of PQFPs, it was found that the normal stress diversities were obvious from different batches of the packaging structure, and the shearing stresses were approximately zero in all of the PQFPs at different chip site.

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Yan, Chao, Jian Ning Ding, Zong Xing Li, and Chao Min Mao. "Digital Calibration for Current-Loop Output of Piezoresistive Sensors." Advanced Materials Research 143-144 (October 2010): 744–48. http://dx.doi.org/10.4028/www.scientific.net/amr.143-144.744.

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The precision of piezoresistive sensors is low between wide temperature range .The conditioning result isn’t ideal by analog approaches. Also the efficiency is very low. To improve this condition , a digital approach is introduced. It coverts sensors’ analog signal to digital value, and then uses polynomial and coefficients stored in singlechip to correct the digital value. At last , the singlechip coverts corrected digital value to analog signal to output. Its conditioning principle and calibration process is also described. We realized 4-to-20mA-current-loop-output of piezoresistive sensors using this aprroch. Calibration results show this method is efficient and low cost.

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Song, Weixia, and Eero Ristolainen. "Calibration Improvement for Piezoresistive Coefficients of Stress Sensors on (100) Silicon." Physica Scripta T114 (January 1, 2004): 205–8. http://dx.doi.org/10.1088/0031-8949/2004/t114/052.

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Pham, A. T., C. Jungemann, and B. Meinerzhagen. "Modeling and validation of piezoresistive coefficients in Si hole inversion layers." Solid-State Electronics 53, no. 12 (December 2009): 1325–33. http://dx.doi.org/10.1016/j.sse.2009.09.018.

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Jaeger, R. C., J. C. Suhling, M. T. Carey, and R. W. Johnson. "Off-axis sensor rosettes for measurement of the piezoresistive coefficients of silicon." IEEE Transactions on Components, Hybrids, and Manufacturing Technology 16, no. 8 (1993): 925–31. http://dx.doi.org/10.1109/33.273694.

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Dissertations / Theses on the topic "Piezoresistive coefficients"

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Cho, Chun Hyung Jaeger Richard C. Suhling J. C. "Experimental characterization of the temperature dependence of the piezoresistive coefficients of silicon." Auburn, Ala., 2007. http://repo.lib.auburn.edu/Send%2002-04-08/CHO_CHUN_21.pdf.

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Phan, Hoang-Phuong. "The Piezoresistive Effect of p-type Single Crystalline 3C-SiC for Mechanical Sensors." Thesis, Griffith University, 2016. http://hdl.handle.net/10072/366955.

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Silicon carbide (SiC) is a promising material for electronic devices operating at high temperatures, thanks to its large energy band gap, superior mechanical prop- erties and excellent chemical inertness. Among various poly types of SiC, cubic single crystalline silicon carbide (3C-SiC) is considered to be the most suitable poly type for MEMS applications, as it can be grown on a Si substrate which is com- patible with the conventional MEMS process and reduces the cost of SiC wafers. Studies on the piezoresistive effect of 3C-SiC are of great interest for developing mechanical sensors such as pressure sensors and strain sensors used for controlling combustion and deep well drilling. This research aims to experimentally charac- terize and theoretically analyze the piezoresistive effect of p-type single crystalline 3C-SiC grown on a large scale Si substrate. The gauge factor, the piezoresistive coefficients in two-terminal and four-terminal resistors, the comparison between single crystalline and nano crystalline SiC, as well as the temperature dependence of the piezoresistive effect in p-type 3C-SiC are also addressed. The large gauge factors of the p-type 3C-SiC at both room temperature and high temperatures found in this study indicated that this poly type is feasible for the development of mechanical sensing transducers used in harsh environments with high temperatures.
Thesis (PhD Doctorate)
Doctor of Philosophy (PhD)
Griffith School of Engineering
Science, Environment, Engineering and Technology
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Book chapters on the topic "Piezoresistive coefficients"

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Shahinpoor, Mohsen. "Review of Piezoresistive Materials as Smart Sensors." In Fundamentals of Smart Materials, 25–35. The Royal Society of Chemistry, 2020. http://dx.doi.org/10.1039/bk9781782626459-00025.

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Chapter 3 reviews piezoresistive materials as smart sensors. Piezoresistivity is defined as a property of certain materials, such as metals and semiconductors, for which the materials electrical resistance changes purely due to mechanical pressure, stress, force, acceleration, strain, and stress. It is the physical property of certain materials which has been widely used to convert a mechanical signal into an electrical signal in smart sensors, accelerometers, tactile sensors, strain gauges, and flow meters and similar devices and microdevices. Metals do not exhibit piezoresistivity as they do not have a bandgap. The resistance of strained metal samples changes due to dimensional changes – this may not be considered as piezo-resistivity. The unit of piezoresistivity is ohm-meter or symbolically Ω–m. Metals and semiconducting materials exhibit such a property. The piezoresistive effect in semiconductors is generally several orders of magnitudes larger than the geometrical effect. This effect is present in semiconductors such as germanium, amorphous silicon, polycrystalline silicon, and silicon carbide, among others. Hence, semiconductor strain gauges with a very high coefficient of sensitivity can be designed, built and operated and utilized in various smart sensor applications and as microelectromechanical (MEMs) or nanoelectromechanical (NEMs) devices and systems.

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Conference papers on the topic "Piezoresistive coefficients"

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Pelloux-Prayer, J., M. Casse, S. Barraud, J. L. Rouviere, and G. Reimbold. "Characterization of piezoresistive coefficients in silicon nanowire transistors." In 2014 15th International Conference on Ultimate Integration on Silicon (ULIS). IEEE, 2014. http://dx.doi.org/10.1109/ulis.2014.6813903.

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Larsen, Gerrit T., Larry L. Howell, and Brian D. Jensen. "Integrated Piezoresistive Flexure Model in Polysilicon." In ASME 2011 International Design Engineering Technical Conferences and Computers and Information in Engineering Conference. ASMEDC, 2011. http://dx.doi.org/10.1115/detc2011-47902.

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This paper presents a new model and test device for determining piezoresistive response in long, thin polysilicon beams with axial and bending moment inducing loads. If the piezoresistive coefficients are known, the Integrated Piezoresistive Flexure Model (IPFM) is used to find the new resistance of a beam under stress. The IPFM first discretizes the beam into small volumes represented by resistors. The stress that each of these volumes experiences is calculated, and the stress is used to change the resistance of the representative resistors according to a second-order piezoresistive equation. Once the resistance change in each resistor is calculated, they are combined in parallel and series to find the resistance change of the entire beam. If the piezoresitive coefficients are not initially known, data are first collected from a test device. Piezoresistive coefficients need to be estimated and the IPFM is run for the test device’s different stress states giving resistance predictions. Optimization is done until changing the piezoresistive coefficients provides model predictions that accurately match experimental data. These piezoresistive coefficients can then be used to design and optimize other piezoresistive devices. A sensor is optimized using this method and is found to increase voltage response by an estimated 10 times.

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Pham, A. T., C. Jungemann, and B. Meinerzhagen. "Modeling of piezoresistive coefficients in Si hole inversion layers." In 2009 10th International Conference on Ultimate Integration on Silicon (ULIS. IEEE, 2009. http://dx.doi.org/10.1109/ulis.2009.4897553.

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Cho, Chun-Hyung, Richard C. Jaeger, Jeffrey C. Suhling, and M. Kaysar Rahim. "Chip-on-Beam and Hydrostatic Calibration of the Piezoresistive Coefficients on (111) Silicon." In ASME 2007 InterPACK Conference collocated with the ASME/JSME 2007 Thermal Engineering Heat Transfer Summer Conference. ASMEDC, 2007. http://dx.doi.org/10.1115/ipack2007-33570.

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Stress sensing test chips are used to investigate die stresses arising from assembly and packaging operations. The chips incorporate resistor or transistor sensing elements that are able to measure stresses via the observation of the changes in their resistivity/mobility. The piezoresistive behavior of such sensors is characterized by three piezoresistive (pi) coefficients, which are electro-mechanical material constants. Stress sensors fabricated on the surface of the (111) silicon wafers offer the advantage of being able to measure the complete stress state compared to such sensors fabricated on the (100) silicon. However, complete calibration of the three independent piezoresistive coefficients is more difficult and one approach utilizes hydrostatic measurement of the silicon “pressure” coefficients. We are interested in stress measurements over a very broad range of temperatures, and this paper present the experimental methods and results for hydrostatic measurements of the pressure coefficient of both n- and p-type silicon over a wide range of temperatures and then uses the results to provide a complete set of temperature dependent piezoresisitive coefficients for the (111) silicon.

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Chen, Jun, Jing Wu, Jeffrey C. Suhling, and Richard C. Jaeger. "Hydrostatic Calibration of the Piezoresistive Coefficients on 4H Silicon Carbide." In 2021 20th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (iTherm). IEEE, 2021. http://dx.doi.org/10.1109/itherm51669.2021.9503213.

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Kang, Y., A. K. M. Mian, J. C. Suhling, and R. C. Jaeger. "Hydrostatic Response of Piezoresistive Stress Sensors." In ASME 1997 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 1997. http://dx.doi.org/10.1115/imece1997-1224.

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Abstract The (111) surface of silicon offers unique advantages for fabrication of piezoresistive stress sensors. Resistive sensor elements fabricated on this particular surface respond to all six components comprising the state of stress. Hence, a multi-element rosette has the capability of measuring the complete stress state at a point in the material. To extract the stress state at points on the die from the resistance changes measured with the sensor rosettes, it is necessary to have accurately calibrated values of six piezoresistive coefficients. Four-point bending and wafer-level calibration methods can measure four out of six piezoresistive coefficients for both p- and n-type resistors. To measure the other two coefficients, a hydrostatic test method has been developed where a high capacity pressure vessel is used to apply triaxial load on a single die. During the test procedure, resistance changes of resistors on the die are monitored. The slopes of the adjusted resistance change versus pressure plots are then used to calculate the desired last two coefficients. A step-by-step hydrostatic test procedure is demonstrated and sample data are presented.

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Cho, Chun-Hyung, Richard C. Jaeger, and Jeffrey C. Suhling. "Characterization of the Piezoresistive Coefficients of (100) Silicon From −150 to +125C." In ASME 2007 InterPACK Conference collocated with the ASME/JSME 2007 Thermal Engineering Heat Transfer Summer Conference. ASMEDC, 2007. http://dx.doi.org/10.1115/ipack2007-33053.

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Stress sensing test chips are widely utilized to investigate integrated circuit die stresses arising from assembly and packaging operations. The test chips incorporate resistor or transistor sensing elements that are able to measure stresses by observing the changes in their resistivity or carrier mobility. This piezoresistive behavior of such sensors is characterized by three piezoresistive coefficients, which are electro-mechanical material constants. We are interested in stress characterization over a very broad range of temperatures. However, the literature provides limited data over the desired range, and even the data at room temperature, exhibit wide discrepancies in magnitude as well as sign. This work focuses on an extensive experimental study of the temperature dependence of the piezoresistive coefficients, π11, π12, and π44, for both p- and n-type silicon. In order to minimize errors associated with misalignment with the crystallographic axes on (100) silicon wafers, anisotropic wet etching was used in this work to accurately locate the axes. A special four-point bending apparatus has been constructed and integrated into an environmental chamber capable of temperatures from −155 to +300°C. Experimental calibration results for the piezoresistive coefficients as a function of temperature from −150°C to +125°C are presented and compared and contrasted with existing values from literature. Measurements were performed using stress sensors fabricated on (100) silicon mounted on PCB material including both die-on-beam and strip-on-beam mounting techniques. Four-point bending (4PB) was used to generate the required stress, and finite element simulations have been used to determine the actual states of stress in the silicon material.

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Hussain, Safina, Richard C. Jaeger, and Jeffrey C. Suhling. "Current dependence of the piezoresistive coefficients of CMOS FETs on (100) silicon." In ESSDERC 2014 - 44th European Solid State Device Research Conference. IEEE, 2014. http://dx.doi.org/10.1109/essderc.2014.6948761.

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Chen, Jun, R. C. Jaeger, and J. C. Suhling. "Piezoresistive Theory for 4H Silicon Carbide Stress Sensors on Four-Degree Off-Axis Wafers." In ASME 2019 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems. American Society of Mechanical Engineers, 2019. http://dx.doi.org/10.1115/ipack2019-6461.

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Abstract Piezoresistive stress sensors have been shown to be a powerful tool for experimental evaluation of die stress distributions. Silicon Carbide (SiC) wide bandgap semiconductors are promising materials for development of high temperature power electronics. In the past, the analysis and design of stress sensors on silicon carbide have assumed that the wafer surface is aligned with the crystallographic axes. However, 4H silicon carbide wafers are produced with a four-degree off-axis cut to ensure high-quality homoepitaxial growth, so that the tilted wafer surface does not perfectly coincide with the fundamental crystallographic axis. Thus, the prior “on-axis” theory is an approximation, and errors in piezoresistive theory caused by such tilted wafer plane need to be discussed. These errors can affect both the results from calibration experiments as well as the stresses extracted during application of sensor rosettes. This paper discusses the theory and extraction of piezoresistive coefficients for 4H-SiC silicon carbide materials in the presence of off-axis starting wafers. Coordinate transformations for the piezoresistive coefficients are reviewed, the required direction cosines between the new rotated axes and the ideal axes are discussed, and the 6 × 6 matrix of piezoresistive coefficients (π-matrix) for the on-axis and off-axis cases are calculated. Many of the elements of the ideal on-axis π-matrixes are zero. In contrast, the off-axis is completely filled with non-zero values indicating additional coupling, particularly among the shear coefficients. Examples of the overall impact of these new terms on calibration and stress measurement are discussed.

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Chen, Jun, Jeffrey C. Suhling, and Richard C. Jaeger. "Measurement of the Temperature Dependence of the Piezoresistive Coefficients of 4H Silicon Carbide." In 2020 19th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm). IEEE, 2020. http://dx.doi.org/10.1109/itherm45881.2020.9190334.

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