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Journal articles on the topic 'Piezoresistive coefficients'

Author: Grafiati

Published: 19 February 2023

Last updated: 20 February 2023

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1

Sugiura, Takaya, Naoki Takahashi, and Nobuhiko Nakano. "Evaluation of p-Type 4H-SiC Piezoresistance Coefficients in (0001) Plane Using Numerical Simulation." Materials Science Forum 1004 (July 2020): 249–55. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.249.

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A numerical simulation of p-type 4H-Silicon Carbide (4H-SiC) piezoresistance coefficients in (0001) plane evaluation is shown in this study. A 4H-SiC material has outstanding material characteristics of wide band-gap of 3.26 eV and high temperature robustness. However, many material properties of 4H-SiC material are still unknown, including piezoresistance coefficients. Piezoresistive effect is resistivity change when mechanical stress is applied to the material. Piezoresistance coefficients express the magnitude of this effect, important for designing a mechanical stress sensor. In this study, reported piezoresistance coefficients of p-type 4H-SiC in (0001) plane is evaluated based on numerical simulation. The simulated results of Gauge Factor (GF) values (determined by (ΔR/R)/ε (R is the resistance and ε is the strain of material)) well matched to the theoretical GF values (determined by πE (π is the piezoresistance coefficient and E is Young’s modulus of the material)), shows that reported piezoresistance coefficients are reliable. Also, the internal mappings of piezoresistive effect from the numerical simulation are shown, useful to understand piezoresistive effect which is difficult to see by experimental results.

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2

Mayer, Michael, Oliver Paul, and Henry Baltes. "Complete set of piezoresistive coefficients of CMOS -diffusion." Journal of Micromechanics and Microengineering 8, no. 2 (June 1, 1998): 158–60. http://dx.doi.org/10.1088/0960-1317/8/2/029.

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3

Phan, Hoang-Phuong, Afzaal Qamar, Dzung Viet Dao, Toan Dinh, Li Wang, Jisheng Han, Philip Tanner, Sima Dimitrijev, and Nam-Trung Nguyen. "Orientation dependence of the pseudo-Hall effect in p-type 3C–SiC four-terminal devices under mechanical stress." RSC Advances 5, no. 69 (2015): 56377–81. http://dx.doi.org/10.1039/c5ra10144a.

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4

Zhang, Jia Hong, Min Yang, Qing Quan Liu, Fang Gu, Min Li, and Yi Xian Ge. "Experimental Investigations on New Characterization Method for Giant Piezoresistance Effect and Silicon Nanowire Piezoresistive Detection." Key Engineering Materials 645-646 (May 2015): 881–87. http://dx.doi.org/10.4028/www.scientific.net/kem.645-646.881.

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This paper presents a novel and effective characterization method for giant piezoresistive properties of silicon nanowires by using the reference structures. This contrast detection approach investigates the influences of quantum size effect and surface defects effect on piezoresistive coefficients of silicon nanowires by direct comparison of the resistivity change ratio of silicon wires with nanoscale-to-microscale width under the same applied stress conditions. The characterization experiments based on four-point bending tensile test demonstrate that piezoresistive coefficient of small nanowidth silicon nanowire can be significantly increased to about five times higher levels than that of bulk silicon under the same impurity concentration, which indicates that the silicon nanowire can have giant piezoresistive effect. On the other hand, to solve the problem on nanowires pick-up, we proposed a nanowire piezoresistive detection approach, whose validity is confirmed by the dynamic LDV resonance test. Meanwhile, to investigate the influence of undercut arising from the wet chemical release process of the suspended silicon nanowire, a three-dimensional finite element simulation is also carried out for the fundamental resonant frequency using ANSYS software. The numerical and experimental results show that our piezoresistive detection is accurate and effective and the undercut should be carefully considered in the design of the high frequency resonator and mixer. The findings of this paper provide some useful references for the piezoresistive effect measurement and the piezoresistive pick-up in nanoelectromechanical system.

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5

Phan, Hoang-Phuong, Dzung Viet Dao, Philip Tanner, Li Wang, Nam-Trung Nguyen, Yong Zhu, and Sima Dimitrijev. "Fundamental piezoresistive coefficients of p-type single crystalline 3C-SiC." Applied Physics Letters 104, no. 11 (March 17, 2014): 111905. http://dx.doi.org/10.1063/1.4869151.

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6

Lwo, Ben-Je, Tung-Sheng Chen, Ching-Hsing Kao, and Yu-Lin Lin. "In-Plane Packaging Stress Measurements Through Piezoresistive Sensors." Journal of Electronic Packaging 124, no. 2 (May 2, 2002): 115–21. http://dx.doi.org/10.1115/1.1452244.

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In our previous works, the piezoresistive sensors have been demonstrated to be accurate and efficient tools for stress measurements in microelectronic packaging. In this study, we first designed test chips with piezoresistive stress sensors, temperature sensors as well as heats, and the test wafers were next manufactured through commercialized IC processes. Piezoresistive sensors on silicon strips, which were cut directly from silicon wafers at a specific angle, were then calibrated, and highly consistent piezoresistive coefficients were extracted at various wafer sites so that both normal and shear stress on the test chips can be measured. Finally, we packaged the test chips into 100-pin PQFP structures with different batches and measured internal stresses on the test chips inside the packaging. After measuring packaging induced stresses as well as thermal stresses on several batches of PQFPs, it was found that the normal stress diversities were obvious from different batches of the packaging structure, and the shearing stresses were approximately zero in all of the PQFPs at different chip site.

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7

Yan, Chao, Jian Ning Ding, Zong Xing Li, and Chao Min Mao. "Digital Calibration for Current-Loop Output of Piezoresistive Sensors." Advanced Materials Research 143-144 (October 2010): 744–48. http://dx.doi.org/10.4028/www.scientific.net/amr.143-144.744.

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The precision of piezoresistive sensors is low between wide temperature range .The conditioning result isn’t ideal by analog approaches. Also the efficiency is very low. To improve this condition , a digital approach is introduced. It coverts sensors’ analog signal to digital value, and then uses polynomial and coefficients stored in singlechip to correct the digital value. At last , the singlechip coverts corrected digital value to analog signal to output. Its conditioning principle and calibration process is also described. We realized 4-to-20mA-current-loop-output of piezoresistive sensors using this aprroch. Calibration results show this method is efficient and low cost.

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8

Song, Weixia, and Eero Ristolainen. "Calibration Improvement for Piezoresistive Coefficients of Stress Sensors on (100) Silicon." Physica Scripta T114 (January 1, 2004): 205–8. http://dx.doi.org/10.1088/0031-8949/2004/t114/052.

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9

Pham, A. T., C. Jungemann, and B. Meinerzhagen. "Modeling and validation of piezoresistive coefficients in Si hole inversion layers." Solid-State Electronics 53, no. 12 (December 2009): 1325–33. http://dx.doi.org/10.1016/j.sse.2009.09.018.

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10

Jaeger, R. C., J. C. Suhling, M. T. Carey, and R. W. Johnson. "Off-axis sensor rosettes for measurement of the piezoresistive coefficients of silicon." IEEE Transactions on Components, Hybrids, and Manufacturing Technology 16, no. 8 (1993): 925–31. http://dx.doi.org/10.1109/33.273694.

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11

Jaeger, Richard C., Jun Chen, Jeffrey C. Suhling, and Leonid Fursin. "First-Order Piezoresistive Coefficients of Lateral NMOS FETs on 4H Silicon Carbide." IEEE Sensors Journal 19, no. 15 (August 1, 2019): 6037–45. http://dx.doi.org/10.1109/jsen.2019.2905787.

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12

Goteti, Uday S., Francy J. Akkara, Richard C. Jaeger, Michael C. Hamilton, and Jeffrey C. Suhling. "Packaging Induced Die Stress Characterization Using van der Pauw Sensors Between −180°C and 80°C." International Symposium on Microelectronics 2014, no. 1 (October 1, 2014): 000483–87. http://dx.doi.org/10.4071/isom-wa43.

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Packaging-induced die-stresses due to temperature effects on various materials of the package are characterized using piezoresistive van der Pauw stress sensors over a temperature range of −180° C to 80° C. Piezo-resistive coefficients extracted previously are then used to obtain a mapping between change in resistance and corresponding stress at all tested temperatures. The obtained values of stress are compared with finite element simulation results.

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13

Hossain, Awlad, and Ahsan Mian. "Four-Terminal Square Piezoresistive Sensors for MEMS Pressure Sensing." Journal of Sensors 2017 (2017): 1–11. http://dx.doi.org/10.1155/2017/6954875.

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The sensitivity of four-terminal piezoresistive sensors commonly referred to as van der Pauw (VDP) structure is investigated. The VDP sensor is considered to be fabricated on (100) silicon due to its potential application in MEMS (microelectromechanical systems) pressure sensors. The sensitivity of the VDP sensor may be affected by misalignment during the etching/diffusion process, the nonuniformity of piezoresistive coefficients through the sensor thickness, and pad size with respect to the sensor size. For this particular analysis, the effect of VDP stress sensitivity on variations in pad sizes and through-the-thickness π-coefficient variation are studied as the effect of misalignment has already been investigated by researchers. Two three-dimensional (3D) finite element analysis (FEA) models are first developed for both traditional VDP resistance and equivalent four-wire bridge measurements. Then, the FEA models are validated with the closed form analytical solutions for point contacts (“zero” pad size) under different biaxial loads. Once the FEA models are validated, additional simulations are conducted to understand the influence of different parameters on the voltage measurements for an equivalent four-wire bridge configuration. It is observed that pad size and through-the-thickness nonuniformity in piezoresistive constants adversely affect the sensor sensitivity.

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14

Balbola, Amr A., Mohammed O. Kayed, and Walied A. Moussa. "Studying the Influence of n-Type Strained (111) Silicon on the Piezoresistive Coefficients." IEEE Sensors Journal 17, no. 2 (January 15, 2017): 302–10. http://dx.doi.org/10.1109/jsen.2016.2616759.

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15

Beisteiner, Christoph, and Bernhard G. Zagar. "A survey of inkjet-printed low-cost sensors." tm - Technisches Messen 85, no. 7-8 (July 26, 2018): 504–14. http://dx.doi.org/10.1515/teme-2017-0136.

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Abstract Inkjet-printers from the company Epson and others can be used to fabricate low-cost sensors on coated PET films. By using nanoparticle-based dispersions resistive temperature dependent sensors, strain gauges, thermocouples and pressure sensors can be fabricated. For these purposes the gauge factors, Seebeck coefficients and temperature coefficients of resistance for Ag, Carbon Black and PEDOT:PSS dispersions on Mitsubishi® and Pelikan® PET substrates are characterized. Furthermore, piezoresistive effects in transverse and longitudinal strain directions are discussed. Additionally, a printed sensor system for measuring strains within a surface is presented. Finally, an injection-moulding process and a lamination process are used to improve the mechanical scratching of those sensors.

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16

Jaeger, Richard C., and Jeffrey C. Suhling. "First- and Second-Order Piezoresistive Coefficients of CMOS FETs From Strong Into Weak Inversion." IEEE Sensors Journal 19, no. 23 (December 1, 2019): 11309–17. http://dx.doi.org/10.1109/jsen.2019.2935993.

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17

Cho, Chun-Hyung, Richard C. Jaeger, and Jeffrey C. Suhling. "The Effect of the Transverse Sensitivity on Measurement of the Piezoresistive Coefficients of Silicon." Japanese Journal of Applied Physics 47, no. 5 (May 16, 2008): 3647–56. http://dx.doi.org/10.1143/jjap.47.3647.

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18

Schörner, R. "First‐ and second‐order longitudinal piezoresistive coefficients ofn‐type metal‐oxide‐semiconductor field‐effect transistors." Journal of Applied Physics 67, no. 9 (May 1990): 4354–57. http://dx.doi.org/10.1063/1.344954.

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19

Tykhan, Myroslav, Orest Ivakhiv, and Vasyl Teslyuk. "New type of Piezoresistive Pressure Sensors for Environments with Rapidly Changing Temperature." Metrology and Measurement Systems 24, no. 1 (March 1, 2017): 185–92. http://dx.doi.org/10.1515/mms-2017-0010.

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Abstract The theoretical aspects of a new type of piezo-resistive pressure sensors for environments with rapidly changing temperatures are presented. The idea is that the sensor has two identical diaphragms which have different coefficients of linear thermal expansion. Therefore, when measuring pressure in environments with variable temperature, the diaphragms will have different deflection. This difference can be used to make appropriate correction of the sensor output signal and, thus, to increase accuracy of measurement. Since physical principles of sensors operation enable fast correction of the output signal, the sensor can be used in environments with rapidly changing temperature, which is its essential advantage. The paper presents practical implementation of the proposed theoretical aspects and the results of testing the developed sensor.

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20

MATSUZUKA, Naoki, and Toshiyuki TORIYAMA. "Derivation of Upper and Lower Bounds for Piezoresistive Coefficients of Polycrystalline Silicon Films with Preferred Orientation." Journal of the Society of Materials Science, Japan 61, no. 3 (2012): 280–85. http://dx.doi.org/10.2472/jsms.61.280.

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21

Salette, A., R. Lefevre, C. Déhan, P. Morfouli, and L. Montès. "A New Method to Extract Piezoresistive Coefficients in Polysilicon Through Gauges Placed on a MEMS Membrane." Procedia Engineering 47 (2012): 426–29. http://dx.doi.org/10.1016/j.proeng.2012.09.175.

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22

Tian, Baohua, Haiping Shang, Lihuan Zhao, Dahai Wang, Yang Liu, and Weibing Wang. "Hermeticity Analysis on SiC Cavity Structure for All-SiC Piezoresistive Pressure Sensor." Sensors 21, no. 2 (January 7, 2021): 379. http://dx.doi.org/10.3390/s21020379.

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The hermeticity performance of the cavity structure has an impact on the long-term stability of absolute pressure sensors for high temperature applications. In this paper, a bare silicon carbide (SiC) wafer was bonded to a patterned SiC substrate with shallow grooves based on a room temperature direct bonding process to achieve a sealed cavity structure. Then the hermeticity analysis on the SiC cavity structure was performed. The microstructure observation demonstrates that the SiC wafers are tightly bonded and the cavities remain intact. Moreover, the tensile testing indicates that the tensile strength of bonding interface is ~8.01 MPa. Moreover, the quantitative analysis on the airtightness of cavity structure through leakage detection shows a helium leak rate of ~1.3 × 10−10 Pa⋅m3/s, which satisfies the requirement of the specification in the MIL-STD-883H. The cavity structure can also avoid an undesirable deep etching process and the problem caused by the mismatch of thermal expansion coefficients, which can be potentially further developed into an all-SiC piezoresistive pressure sensor employable for high temperature applications.

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23

Tian, Baohua, Haiping Shang, Lihuan Zhao, Dahai Wang, Yang Liu, and Weibing Wang. "Hermeticity Analysis on SiC Cavity Structure for All-SiC Piezoresistive Pressure Sensor." Sensors 21, no. 2 (January 7, 2021): 379. http://dx.doi.org/10.3390/s21020379.

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The hermeticity performance of the cavity structure has an impact on the long-term stability of absolute pressure sensors for high temperature applications. In this paper, a bare silicon carbide (SiC) wafer was bonded to a patterned SiC substrate with shallow grooves based on a room temperature direct bonding process to achieve a sealed cavity structure. Then the hermeticity analysis on the SiC cavity structure was performed. The microstructure observation demonstrates that the SiC wafers are tightly bonded and the cavities remain intact. Moreover, the tensile testing indicates that the tensile strength of bonding interface is ~8.01 MPa. Moreover, the quantitative analysis on the airtightness of cavity structure through leakage detection shows a helium leak rate of ~1.3 × 10−10 Pa⋅m3/s, which satisfies the requirement of the specification in the MIL-STD-883H. The cavity structure can also avoid an undesirable deep etching process and the problem caused by the mismatch of thermal expansion coefficients, which can be potentially further developed into an all-SiC piezoresistive pressure sensor employable for high temperature applications.

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24

Jovic, Vesna, Milan Matic, Branko Vukelic, Marko Starcevic, Milce Smiljanic, Jelena Lamovec, and Milos Vorkapic. "Attachment of MEM piezoresistive silicon pressure sensor dies using different adhesives." Chemical Industry 65, no. 5 (2011): 497–505. http://dx.doi.org/10.2298/hemind110509044j.

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This paper gives comparison and discussion of adhesives used for attachment of silicon piezoresistive pressure sensor dies. Special attention is paid on low pressure sensor dies because of their extreme sensitivity on stresses, which can arise from packaging procedure and applied materials. Commercially available adhesives ?Scotch Weld 2214 Hi-Temp? from ?3M Co.? and ?DM2700P/H848? from ?DIEMAT?, USA, were compared. First of them is aluminum filled epoxy adhesive and second is low melting temperature (LMT) glass paste. Comparing test results for low pressure sensor chips we found that LMT glass (glass frit) is better adhesive for this application. Applying LMT glass paste minimizes internal stresses caused by disagreement of coefficients of thermal expansions between sensor die and housing material. Also, it minimizes stresses introduced during applying external loads in the process of pressure measuring. Regarding the measurements, for the sensors installed with filled epoxy paste, resistor for compensation of temperature offset change had negative values in all cases, which means that linear temperature compensation, of sensors installed this way, would be impossible. In the sensors installed with LMT glass paste, all results, without exception, were in their common limits (values), which give the possibility of passive temperature compensation. Furthermore, LMT glass attachment can broaden temperature operating range of MEM silicon pressure sensors towards higher values, up to 120 ?C.

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25

Ewuame, Komi Atchou, Vincent Fiori, Karim Inal, Pierre Olivier Bouchard, Sebastien Gallois-Garreignot, Sylvain Lionti, Clement Tavernier, and Herve Jaouen. "Investigation of TSV Induced Thermo-Mechanical Stress: Implementation of Piezoresistive Sensors and Correlation with Simulation." Advanced Materials Research 996 (August 2014): 975–81. http://dx.doi.org/10.4028/www.scientific.net/amr.996.975.

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This work deals with a methodology to evaluate residual stresses within microelectronic devices by using MOS (Metal Oxide Semiconductor) rosette stress sensors. The stress tensor was evaluated by carrying out electrical measurements on test vehicle: the bridge from electrical to stress values was ensured by the piezoresistive relations and, prior to further in-house calibration, coefficients from literature were employed. For correlation purpose, numerical simulations were performed in order to evaluate stresses induced by TSV (Through Silicon Via). In this paper, the whole framework is described, and stress fields evaluated from in-situ electrical measurements on CMOS65 rosette sensor are compared to simulated ones. Some of the ultimate targets of this work are to develop a validated framework to deeply understand TSV induced thermo-mechanical stresses and to allow design rules definitions for products reliability and transistor performances.

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26

Jaeger, Richard, Jun Chen, Jeffrey Suhling, and Leonid Fursin. "Corrections to “First-Order Piezoresistive Coefficients of Lateral NMOS FETs on 4H Silicon Carbide” [Aug 19 6037-6045]." IEEE Sensors Journal 20, no. 14 (July 15, 2020): 8186–87. http://dx.doi.org/10.1109/jsen.2020.2982630.

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27

Balbola, Amr A., Mohammed O. Kayed, and Walied A. Moussa. "Experimental Characterization of the Influence of Transverse Prestrain on the Piezoresistive Coefficients of Heavily Doped n-Type Silicon." IEEE Transactions on Electron Devices 65, no. 11 (November 2018): 5002–8. http://dx.doi.org/10.1109/ted.2018.2871687.

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28

Chang, W. T., and J. A. Lin. "Piezoresistive coefficients of 〈110〉 silicon-on-insulator MOSFETs with 0.135/0.45/10 micrometers channel length with external forces." Microelectronic Engineering 86, no. 7-9 (July 2009): 1965–68. http://dx.doi.org/10.1016/j.mee.2009.02.036.

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29

Cho, Chun-Hyung, Richard C. Jaeger, and Jeffrey C. Suhling. "Characterization of the Temperature Dependence of the Piezoresistive Coefficients of Silicon From ${-}150\,^{\circ}$C to ${+}125\,^{\circ}$C." IEEE Sensors Journal 8, no. 8 (August 2008): 1455–68. http://dx.doi.org/10.1109/jsen.2008.923575.

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30

Cho, Chun-Hyung, Richard C. Jaeger, and Jeffrey C. Suhling. "Evaluation of the Temperature Dependence of the Combined Piezoresistive Coefficients of (111) Silicon Utilizing Chip-on-Beam and Hydrostatic Calibration." Journal of the Korean Physical Society 52, no. 3 (March 15, 2008): 612–20. http://dx.doi.org/10.3938/jkps.52.612.

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31

Chadwick, K. M., D. J. DeTurris, and J. A. Schetz. "Direct Measurements of Skin Friction in Supersonic Combustion Flow Fields." Journal of Engineering for Gas Turbines and Power 115, no. 3 (July 1, 1993): 507–14. http://dx.doi.org/10.1115/1.2906737.

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An experimental investigation was conducted to measure skin friction along the chamber walls of supersonic combustors. A direct force measurement device was used to measure simultaneously an axial and a transverse component of the small tangential shear force passing over a nonintrusive floating element. This measurement was made possible with a sensitive piezoresistive deflection sensing unit. The floating head is mounted to a stiff cantilever beam arrangement with deflection due to the flow on the order of 0.00254 mm (0.0001 in). This allowed the instrument to be a nonnulling type. A second gage was designed with active cooling of the floating sensor head to eliminate nonuniform temperature effects between the sensor head and the surrounding wall. The key to this device is the use of a quartz tube cantilever with piezoresistive strain gages bonded directly to its surface. A symmetric fluid flow was developed inside the quartz tube to provide cooling to the backside of the floating head. Tests showed that this flow did not influence the tangential force measurement. Measurements were made in three separate combustor test facilities. Tests at NASA Langley Research center consisted of a Mach 3.0 vitiated air flow with hydrogen fuel injection at Pt = 500 psia (3466 kPa) and Tt = 3000 R (1667 K). Two separate sets of tests were conducted at the General Applied Science Laboratory (GASL) in a scramjet combustor model with hydrogen fuel injection in vitiated air at Mach = 3.3, Pt = 800 psia (5510 kPa), and Tt = 4000 R (2222 K). Skin friction coefficients between 0.001–0.005 were measured dependent on the facility and measurement location. Analysis of the measurement uncertainties indicate an accuracy to within ± 10–15 percent of the streamwise component.

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32

Shi, Chang-zhi, Xiao-wei Liu, and Rong-yan Chuai. "Current-induced recrystallization of polycrystalline silicon nano thin films deposited at different temperatures and its influences on piezoresistive sensitivity and temperature coefficients." Sensors and Actuators A: Physical 162, no. 2 (August 2010): 284–90. http://dx.doi.org/10.1016/j.sna.2010.02.004.

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Rollo, Gennaro, Alfredo Ronca, Pierfrancesco Cerruti, Xin Peng Gan, Guoxia Fei, Hesheng Xia, Gleb Gorokhov, et al. "On the Synergistic Effect of Multi-Walled Carbon Nanotubes and Graphene Nanoplatelets to Enhance the Functional Properties of SLS 3D-Printed Elastomeric Structures." Polymers 12, no. 8 (August 17, 2020): 1841. http://dx.doi.org/10.3390/polym12081841.

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Elastomer-based porous structures realized by selective laser sintering (SLS) are emerging as a new class of attractive multifunctional materials. Herein, a thermoplastic polyurethane (TPU) powder for SLS was modified by 1 wt.% multi-walled carbon nanotube (MWCNTs) or a mixture of MWCNTs and graphene (GE) nanoparticles (70/30 wt/wt) in order to investigate on both the synergistic effect provided by the two conductive nanostructured carbonaceous fillers and the correlation between formulation, morphology, and final properties of SLS printed porous structures. In detail, porous structures with a porosity ranging from 20% to 60% were designed using Diamond (D) and Gyroid (G) unit cells. Results showed that the carbonaceous fillers improve the thermal stability of the elastomeric matrix. Furthermore, the TPU/1 wt.% MWCNTs-GE-based porous structures exhibit excellent electrical conductivity and mechanical strength. In particular, all porous structures exhibit a robust negative piezoresistive behavior, as demonstrated from the gauge factor (GF) values that reach values of about −13 at 8% strain. Furthermore, the G20 porous structures (20% of porosity) exhibit microwave absorption coefficients ranging from 0.70 to 0.91 in the 12–18 GHz region and close to 1 at THz frequencies (300 GHz–1 THz). Results show that the simultaneous presence of MWCNTs and GE brings a significant enhancement of specific functional properties of the porous structures, which are proposed as potential actuators with relevant electro-magnetic interference (EMI) shielding properties.

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34

Yang, Guang, and Hengyan Xie. "Mechanical Derivation of the Longitudinal and Transverse Piezoresistive Coefficient on Piezoresistive Pressure Sensor." Procedia Engineering 29 (2012): 1612–17. http://dx.doi.org/10.1016/j.proeng.2012.01.182.

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35

Bao, Minhang, and Yiping Huang. "Batch derivation of piezoresistive coefficient tensor by matrix algebra." Journal of Micromechanics and Microengineering 14, no. 3 (November 18, 2003): 332–34. http://dx.doi.org/10.1088/0960-1317/14/3/003.

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36

Fruett, F., and G. C. M. Meijer. "Measurement and compensation of piezoresistive coefficient 44 for minority-carrier concentration." Electronics Letters 36, no. 2 (2000): 173. http://dx.doi.org/10.1049/el:20000150.

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37

Okatani, Taiyu, Hidetoshi Takahashi, Kentaro Noda, Tomoyuki Takahata, Kiyoshi Matsumoto, and Isao Shimoyama. "A Tactile Sensor Using Piezoresistive Beams for Detection of the Coefficient of Static Friction." Sensors 16, no. 5 (May 18, 2016): 718. http://dx.doi.org/10.3390/s16050718.

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38

Zheng, Beirong, Chen Zhou, Xiaomin Pan, Quan Wang, and Wei Xue. "Intelligent Detector of Internal Combustion Engine Cylinder Pressure and Sensitivity Temperature Coefficient Compensation." Advances in Materials Science and Engineering 2013 (2013): 1–6. http://dx.doi.org/10.1155/2013/107582.

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The detecting device based on mechanical mechanism is far from the measurement of internal combustion engine cylinder explosion and compression pressure. This pressure detection is under the environment of pulsed gas (over 500 times per one minute) and mechanical impactive vibration. Piezoresistive detection with silicon on insulator (SOI) strain gauges to pressure seems to be a good solution to meet such special applications. In this work, separation by implanted oxygen (SIMOX) wafer was used to fabricate the high temperature pressure sensor chip. For high accuracy and wide temperature range application, this paper also presents a novel pressure sensitivity temperature coefficient (TCS) compensation method, using integrated constant current network. A quantitative compensation formula is introduced in mathematics. During experiments, the absolute value of the compensated TCS is easy to be 10 × 10−6/°C~100 × 10−6/°C by individual adjustment and calibration of each device’s temperature compensation. Therefore, the feasibility and practicability of this technology are tested. Again, the disadvantages are discussed after the research of the experiment data and the improvement methods are also given in the designing period. This technology exhibits the great potential practical value of internal combustion engine cylinder pressure with volume manufacturing.

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39

Beaty, R. E., R. C. Jaeger, J. C. Suhling, R. W. Johnson, and R. D. Butler. "Evaluation of piezoresistive coefficient variation in silicon stress sensors using a four-point bending test fixture." IEEE Transactions on Components, Hybrids, and Manufacturing Technology 15, no. 5 (1992): 904–14. http://dx.doi.org/10.1109/33.180057.

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Samridhi, Kulwant Singh, and P. A. Alvi. "Influence of the pressure range on temperature coefficient of resistivity (TCR) for polysilicon piezoresistive MEMS pressure sensor." Physica Scripta 95, no. 7 (May 27, 2020): 075005. http://dx.doi.org/10.1088/1402-4896/ab93e7.

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Kazakin, A., Y. Enns, A. Mizerov, R. Kleimanov, and A. Bouravleuv. "Investigation of the piezoresistive properties and temperature coefficient of resistance of epitaxial GaN layers for applications in MEMS and thermal flow sensors." Journal of Physics: Conference Series 1410 (December 2019): 012214. http://dx.doi.org/10.1088/1742-6596/1410/1/012214.

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Azizi, Saber, Hadi Madinei, Hamed Haddad Khodaparast, Shirko Faroughi, and Michael I. Friswell. "On the nonlinear dynamics of a piezoresistive based mass switch based on catastrophic bifurcation." International Journal of Mechanics and Materials in Design, February 14, 2023. http://dx.doi.org/10.1007/s10999-023-09650-z.

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AbstractThis research investigates the feasibility of mass sensing in piezoresistive MEMS devices based on catastrophic bifurcation and sensitivity enhancement due to the orientation adjustment of the device with respect to the crystallographic orientation of the silicon wafer. The model studied is a cantilever microbeam at the end of which an electrostatically actuated tip mass is attached. The piezoresistive layers are bonded to the vicinity of the clamped end of the cantilever and the device is set to operate in the resonance regime by means of harmonic electrostatic excitation. The nonlinearities due to curvature, shortening and electrostatic excitation have been considered in the modelling process. It is shown that once the mass is deposited on the tip mass, the system undergoes a cyclic fold bifurcation in the frequency domain, which yields a sudden jump in the output voltage of the piezoresistive layers; this bifurcation is attributed to the nonlinearities governing the dynamics of the response. The partial differential equations of the motion are derived and discretized to give a finite degree of freedom model based on the Galerkin method, and the limit cycles are captured in the frequency domain by using the shooting method. The effect of the orientation of the device with respect to the crystallographic coordinates of the silicon and the effect of the orientation of the piezoresistive layers with respect to the microbeam length on the sensitivity of the device is also investigated. Thanks to the nonlinearity and the orientation adjustment of the device and piezoresistive layers, a twofold sensitivity enhancement due to the added mass was achieved. This achievement is due to the combined amplification of the sensitivity in the vicinity of the bifurcation point, which is attributed to the nonlinearity and maximizing the sensitivity by orientation adjustment of the anisotropic piezoresistive coefficients.

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Vasu, Meena K., Ribu Mathew, and A. Ravi Sankar. "A Numerical Modeling Approach to Estimate the Piezoresistance of Diffused Resistors with Experimental Validation." Journal of Micromechanics and Microengineering, July 27, 2022. http://dx.doi.org/10.1088/1361-6439/ac848b.

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Abstract Silicon piezoresistive sensors have been widely used for many applications in recent decades. Monocrystalline silicon resistors are realized using an ion-implantation or a thermal diffusion process with a Gaussian or complementary error function profile. However, over the years, most researchers have neglected the doping concentration profile of the piezoresistor in the modeling stages resulting in erroneous responses that are far removed from experimental results of fabricated resistive sensors. In the present work, we propose a simulation approach to accurately estimate the piezoresistance of thermally diffused resistors with a non-uniform doping profile. We have modeled the diffused resistor as a parallel combination of several small slices, each having a unique piezoresistive coefficient. Three different slicing strategies were investigated to evaluate the impact of the piezoresistive coefficients, the electrical resistivity of the resistor slices, and the stress profile across the thickness of the resistor embedded in an accelerometer device. The cumulative impact of these parameters on the sensor's overall sensitivity is evaluated. Further, we have also studied the influence of the accelerometer’s flexure thickness on the sensor’s sensitivity. It is observed from the simulation results that one of the slicing strategies with more slices at the surface of the resistor results in less than 1% error compared to the experimental results of an accelerometer device with a 60 µm flexure thickness.

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Kleimann, P., M. Le Berre, D. Barbier, and P. Pinard. "Application of Rapid Thermal Annealing on LPCVD Polysilicon Films for Piezoresistivity." MRS Proceedings 403 (1995). http://dx.doi.org/10.1557/proc-403-399.

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AbstractPolycrystalline silicon is used as a transducing material in pressure microsensors. Its piezoresistive properties are strongly dependent on the processing steps and its properties -which define the sensor characteristics- vary sharply with temperature. LPCVD boron implanted polysilicon thin films have been annealed by RTA at 1100°C or below under conditions ensuring a uniform dopant distribution accross the film thickness. The resistivity as well as the gauge factor have been measured and compared with other authors' results. The gauge factor has been measured using the clamped beam technique between room temperature and 200°C with a specially designed apparatus. Technological parameters such as the Temperature Coefficient of Resistance (TCR) and the Temperature Coefficient of the Gauge Factor (TCK) are deduced as a function of doping. It appears that such coefficients do not satisfactorily describe the resistivity and gauge factor behavior at high temperature.

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Lund, Eivind, and Terje G. Finstad. "Temperature and Doping Dependency of Piezoresistivity in p-type Silicon." MRS Proceedings 657 (2000). http://dx.doi.org/10.1557/proc-657-ee5.13.

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ABSTRACTWe have performed new measurements of the temperature and doping dependency of the piezoresistive effect in p-type silicon. Piezoresistivity is one of the most common sensing principles of micro-electro-mechanical-systems (MEMS). Our measurements are performed in a specially designed setup based on the well-known 4 point bending technique. The samples are beams of full wafer thickness. To minimize leakage currents and to obtain uniform doping profiles, we have used SIMOX (Separation by IMplantation of OXygen) substrates with resistors defined in an epitaxial layer. Spreading resistance measurements show that the doping profiles are uniform with depth, while measurements of leakage current versus temperature indicate low leakage current. In this paper we present results for the doping concentration range from 1×1017 – 1×1020 cm−3 and the temperature range from –30 to 150 degrees Celsius. The results show a doping dependency of piezoresistivity well described by the current models. The measurements of the temperature dependency of the coefficients of piezoresistivity are compared to a linear model with a negative temperature coefficient whose absolute value decreases with increasing doping.

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Gao, Cheng wu, and Dacheng Zhang. "Establishment and Verification of Resistance Temperature Coefficient Model of P-type Non-uniformly Doped Resistance." Journal of Micromechanics and Microengineering, August 18, 2022. http://dx.doi.org/10.1088/1361-6439/ac8aa4.

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Abstract In this paper, a first-order average temperature coefficient of resistance (TCR_ave) calculation model is established and analyzed based on the distribution of piezoresistive doping concentration in bulk silicon. Furthermore, by extracting the experimental results of the first-order TCR_ave of multiple research groups and combining the first-order TCR_ave calculation model, the new mobility model in the main concentration range of piezoresistance (1×1018~1×1020 at/cm3) is obtained by fitting. The first-order TCR_ave of five implantation concentrations under the same process is tested. The results show that the error between the first-order TCR_ave obtained based on the new mobility calculation model and the test results is within 5%. However, the first-order TCR_ave based on the Arora mobility model has a deviation of 104.6% under the implantation condition of 3.75e15 at/cm2. At the same time, the effects of different annealing temperatures and time on the first-order TCR_ave at the implantation concentration of 8.5e13 at/cm2 are compared. The results show that a higher annealing temperature or longer annealing time is not conducive to reducing the first-order TCR_ave, but the difference is small.

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