Relevant bibliographies by topics / PIN photodiode sensor

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  1. Journal articles
  2. Dissertations / Theses
  3. Conference papers

Academic literature on the topic 'PIN photodiode sensor'

Author: Grafiati
Published: 2 June 2025
Last updated: 12 July 2025

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Journal articles on the topic "PIN photodiode sensor"

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Andjelkovic, Marko, and Goran Ristic. "Feasibility study of a current mode gamma radiation dosimeter based on a commercial pin photodiode and a custom made auto-ranging electrometer." Nuclear Technology and Radiation Protection 28, no. 1 (2013): 73–83. http://dx.doi.org/10.2298/ntrp1301073a.

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An experimental study has been conducted to evaluate the feasibility of a current mode gamma radiation dosimeter, consisting of a commercial PIN photodiode as a radiation sensor, and a custom made auto-ranging electrometer for real-time measurement of the PIN photodiode?s response under radiation exposure. The radiation induced direct current response for single PIN photodiodes with different active areas, as well as for multiple PIN photodiodes connected in parallel, has been investigated. Three types of commercial silicon PIN photodiodes have been chosen for evaluation - S1223, BPW34, and PS100-6-CER2 PIN. During the experiment, five samples have been tested - three samples made of single PIN photodiodes (one sample of each photodiode type) and two samples formed by connecting multiple photodiodes in parallel (two BPW34 photodiodes in parallel and four BPW34 photodiodes in parallel). The samples have been irradiated with a 60Co gamma ray source and the relations between the induced photocurrent and the dose rate, and between the accumulated charge and the absorbed dose, have been determined. For measuring the photodiodes response, a custom made auto-ranging electrometer controlled by a personal computer, and capable of measuring direct currents from 50 pA to 10 mA with relative error less than 2.5%, has been used. Obtained results have shown very good linearity between the dose rate and the induced photocurrent for dose rates ranging from 0.93 Gy/h to 67 Gy/h. Also, very good linearity has been observed between the accumulated charge and the absorbed dose for all tested samples, within the investigated range of absorbed doses from 472 mGy to 3.3 Gy. On the basis of the obtained results, a simple model has been derived, enabling the estimation of the photodiode?s current response as a function of the dose rate and the photodiode?s geometry (active area and depletion layer width).
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Chiu, Yu-Chieh, Pinghui Sophia Yeh, Tzu-Hsun Wang, Tzu-Chieh Chou, Cheng-You Wu, and Jia-Jun Zhang. "An Ultraviolet Sensor and Indicator Module Based on p–i–n Photodiodes." Sensors 19, no. 22 (2019): 4938. http://dx.doi.org/10.3390/s19224938.

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The monolithic integration of an ultraviolet (UV) sensor and warning lamp would reduce the cost, volume, and footprint, in comparison to a hybrid combination of discrete components. We constructed a module comprising a monolithic sensor indicator device based on basic p–i–n (PIN) photodiodes and a transimpedance amplifier. GaN-based light-emitting diodes (LEDs) with an indium-tin oxide (ITO) current-spreading layer and PIN photodiodes without ITO deposition on the light-receiving area, were simultaneously fabricated. The resultant incident photon-to-electron conversion efficiencies of the PIN photodiodes at UV wavelengths were significantly higher than those of the reverse-biased LEDs. The photocurrent signals of the PIN photodiode were then converted to voltage signals to drive an integrated visible LED, which functioned as an indicator. The more the ambient UV-light intensity exceeded a specified level, the brighter the glow of the LED. The responsivities of 0.20 and 0.16 A/W were obtained at 381 and 350 nm, respectively, under a bias voltage of 5 V. We also addressed the epitaxial structural details that can affect the collection efficiency of the photocurrent generated by UV light absorption. The crosstalk between the PIN photodiode and LEDs (of various center-to-center distances) was measured.
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Marques Lameirinhas, Ricardo A., João Paulo N. Torres, and Catarina P. Correia V. Bernardo. "Modelling and Design of a Dual Depletion PIN Photodiode as Temperature Sensor." Sensors 23, no. 10 (2023): 4599. http://dx.doi.org/10.3390/s23104599.

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Nowadays, optical systems play an important role in communications. Dual depletion PIN photodiodes are common devices that can operate in different optical bands, depending on the chosen semiconductors. However, since semiconductor properties vary with the surrounding conditions, some optical devices/systems can act as sensors. In this research work, a numerical model is implemented to analyze the frequency response of this kind of structure. It considers both transit time and capacitive effects, and can be applied to compute photodiode frequency response under nonuniform illumination. The InP-In0.53Ga0.47As photodiode is usually used to convert optical into electrical power at wavelengths around 1300 nm (O-band). This model is implemented considering an input frequency variation of up to 100 GHz. The focus of this research work was essentially the determination of the device’s bandwidth from the computed spectra. This was performed at three different temperatures: 275 K, 300 K, and 325 K. The aim of this research work was to analyze if a InP-In0.53Ga0.47As photodiode can act as a temperature sensor, to detect temperature variations. Furthermore, the device dimensions were optimized, to obtain a temperature sensor. The optimized device, for a 6 V applied voltage and an active area of 500 μm2, had a total length of 2.536 μm, in which 53.95% corresponded to the absorption region. In these conditions, if the temperature increases 25 K from the room temperature, one should expect a bandwidth increase of 8.374 GHz, and if it decreases 25 K from that reference, the bandwidth should reduce by 3.620 GHz. This temperature sensor could be incorporated in common InP photonic integrated circuits, which are commonly used in telecommunications.
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Misto, Misto, Tri Mulyono, and Alex Alex. "Measurement System of Sugar Content in Liquid Media using Computerized Photodiode Sensor." Jurnal ILMU DASAR 17, no. 1 (2017): 13. http://dx.doi.org/10.19184/jid.v17i1.2664.

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It has been made an electronic system for measurement of sugar cane in solution media. This system uses a pin photodiode as a sensor, laser source, optical fiber, an operational amplifier (Op-Amp), analog to digital converter (ADC) of the Arduino, and computers. The main operation of the measurement system is done by the sensor and controlled by computer. The the photodiode sensor sends a signal to a signal processing unit (op-amp) and converted to a digital signal by the ADC. The digital signal is then forwarded for processing and display (computer). We Concluded that the system working well because of the sugar content information can be simultaneously displayed on the monitor .Keywords: sugar content, pin photodiode, computer
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Li Hang, 李杭, 刘文清 Liu Wenqing, and 姚路 Yao Lu. "Miniature Chemiluminescence NO Sensor Based on PIN Photodiode." Acta Optica Sinica 39, no. 5 (2019): 0523001. http://dx.doi.org/10.3788/aos201939.0523001.

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Jonak-Auer, I., and S. Jessenig. "Processing of an Integrated Optical Sensor with Almost 100% Quantum Efficiency." Key Engineering Materials 644 (May 2015): 45–48. http://dx.doi.org/10.4028/www.scientific.net/kem.644.45.

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We report on a new fabrication process of integrated PIN photodetectors with very high quantum efficiencies into a 0.35μm CMOS process, including improved processing for bottom antireflective coating (BARC). The integration process is such that complete modularity of the CMOS process remains untouched by the implementation of the highly efficient photodetectors. Due to the fact that only two additional masks and one ion implantation step are necessary for the implementation of PIN photodetectors including BARC, this integration process also proves to be very cost effective. In-house processed p-doped intrinsic layers with EPI doping levels as low as 1∙1012/cm3 serve as CMOS base material. This is a doping level that major semiconductor vendors could not provide. With just one additional mask and ion implantation we provide doping concentrations very similar to standard CMOS substrates to areas outside the photoactive regions. Thus full functionality of the standard CMOS logic can be guaranteed while the photodetectors highly benefit from the low doping concentrations of the intrinsic EPI. Special surface protection techniques are performed to maintain the low doping concentrations of the substrate during the complete CMOS processing. To further enhance the photosensor’s quantum efficiency especially of photodetector arrays we present a new BARC process. With this new BARC process we can lower the dark current in photodiode arrays by at least one order of magnitude compared to currently established plasma-etch methods. The following photodiode parameters could be accomplished for 100x100μm2 single photodiodes with BARC: quantum efficiencies of 76%, 99.8% and 74% at wavelengths of 500nm, 675nm and 850nm, respectively, capacitances of 0.13pF and dark currents of 1.18pA for unbiased photodiodes.
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Nemecek, A., K. Oberhauser, and H. Zimmermann. "Distance measurement sensor with PIN-photodiode and bridge circuit." IEEE Sensors Journal 6, no. 2 (2006): 391–97. http://dx.doi.org/10.1109/jsen.2006.870164.

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Kyomasu, M. "Development of an integrated high speed silicon PIN photodiode sensor." IEEE Transactions on Electron Devices 42, no. 6 (1995): 1093–99. http://dx.doi.org/10.1109/16.387242.

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Chungyong, Kim, and Kim Gyu-Sik. "Improvement of a Radon Counter Sensitivity Using High Voltage Ion Chamber." International Journal of Trend in Scientific Research and Development 2, no. 4 (2018): 951–54. https://doi.org/10.31142/ijtsrd14257.

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Radon is an invisible, odorless, and chemically inactive radioactive gas produced by the decay of uranium ore. Various types of equipment and components have been proposed for use in effective radon detection. In this paper, we used a radon counter with a PIN photodiode radon sensor module. Using electrostatic collection and the PIN photodiode, a high sensitivity radon detector for air has been developed. The calibration system has also been developed using a linear regression analysis technique. Chungyong Kim | Gyu-Sik Kim "Improvement of a Radon Counter Sensitivity Using High-Voltage Ion Chamber" Published in International Journal of Trend in Scientific Research and Development (ijtsrd), ISSN: 2456-6470, Volume-2 | Issue-4 , June 2018, URL: https://www.ijtsrd.com/papers/ijtsrd14257.pdf
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Taufiqurrohman Zain, Alex. "Pengujian sensor fotodetektor sebagai alat ukur kadar gula pada larutan gula." Jurnal TAMBORA 4, no. 1 (2020): 39–45. http://dx.doi.org/10.36761/jt.v4i1.570.

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Photodiode is a type of photodetector. P-I-N (PIN) link photodiode was chosen in this study. This selection is based on high sensitivity and rapid response to any changes in light. BPW 34 type photodiode is used as a photodetector and RGB bright LED as its light source. The selection of RGB bright LEDs is based on its ability to automatically change the beam spectrum based on bit changes. As a medium for propagating light, a single mode optical fiber is used. In addition to designing hardware, this research also designs applications through Arduino IDE 1.0.4 and LabVIEW 2013 so that hardware can be controlled and displayed on a PC. As a microcontroller, the Arduino UNO module was used in this study. The results of this study indicate that the rays on the RGB bright LED can be controlled through the bit system on a PC (Personal Computer), and can bring up the measurement results of sugar content through a PC.
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Dissertations / Theses on the topic "PIN photodiode sensor"

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Aoyama, Takahiko, Shuji Koyama, and Chiyo Kawaura. "An in-phantom dosimetry system using pin silicon photodiode radiation sensors for measuring organ doses in x-ray CT and other diagnostic radiology." American Institute of Physics, 2002. http://hdl.handle.net/2237/7087.

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Conference papers on the topic "PIN photodiode sensor"

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de Mello, Tiago Neves, Tatsuki Nakagawa, Ken Arano, et al. "Development of Graphene Resonant Sensor with PIN Photodiode for On-Chip Mass Measurement." In 2024 International Conference on Optical MEMS and Nanophotonics (OMN). IEEE, 2024. http://dx.doi.org/10.1109/omn61224.2024.10685261.

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Nemecek, Alexander, Klaus Oberhauser, Gerald Zach, and Horst Zimmermann. "Distance Measurement Line Sensor with PIN Photodiodes." In 2006 5th IEEE Conference on Sensors. IEEE, 2006. http://dx.doi.org/10.1109/icsens.2007.355773.

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Vieira, Manuel A., Manuela Vieira, Joao Costa, Paula Louro, and Miguel Fernandes. "Double Pin Photodiodes with Two Optical Gate Connections for Light Triggering." In 2010 First International Conference on Sensor Device Technologies and Applications (SENSORDEVICES). IEEE, 2010. http://dx.doi.org/10.1109/sensordevices.2010.32.

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Augel, L., S. Bechler, R. Korner, M. Oehme, J. Schulze, and I. A. Fischer. "An integrated plasmonic refractive index sensor: Al nanohole arrays on Ge PIN photodiodes." In 2017 IEEE International Electron Devices Meeting (IEDM). IEEE, 2017. http://dx.doi.org/10.1109/iedm.2017.8268528.

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Li, Linghan, Akio Higo, Ryo Takigawa, Eiji Higurashi, Masakazu Sugiyama, and Yoshiaki Nakano. "Silicon/III–V material active layer heterointegrated vertical PIN waveguide photodiode by direct bonding." In TRANSDUCERS 2011 - 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference. IEEE, 2011. http://dx.doi.org/10.1109/transducers.2011.5969752.

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Journal articles
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