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Journal articles on the topic 'Plasma Atomic Layer Etching (ALE)'

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Published: 17 May 2025
Last updated: 31 July 2025

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1

Guan, Lulu, Xingyu Li, Dongchen Che, Kaidong Xu, and Shiwei Zhuang. "Plasma atomic layer etching of GaN/AlGaN materials and application: An overview." Journal of Semiconductors 43, no. 11 (2022): 113101. http://dx.doi.org/10.1088/1674-4926/43/11/113101.

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Abstract With the development of the third generation of semiconductor devices, it is essential to achieve precise etching of gallium nitride (GaN) materials that is close to the atomic level. Compared with the traditional wet etching and continuous plasma etching, plasma atomic layer etching (ALE) of GaN has the advantages of self-limiting etching, high selectivity to other materials, and smooth etched surface. In this paper the basic properties and applications of GaN are presented. It also presents the various etching methods of GaN. GaN plasma ALE systems are reviewed, and their similariti
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2

Chittock, Nicholas John, Wilhelmus M. M. (Erwin) Kessels, Harm Knoops, and Adrie Mackus. "(Invited) The Use of Plasmas for Isotropic Atomic Layer Etching." ECS Meeting Abstracts MA2023-02, no. 29 (2023): 1464. http://dx.doi.org/10.1149/ma2023-02291464mtgabs.

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Atomic layer etching (ALE) is set to be a vital part of the advanced semiconductor manufacturing toolbox, known for its precise control of the film thickness and minimal damage. These benefits are possible due to the sequential self-limiting half-cycles that are employed within an ALE process. Initially, ALE was underestimated due to low etch rates, but it is now experiencing a renaissance due to the requirements imposed by further downscaling.1 The ALE community is mostly divided into two groups: plasma anisotropic and thermal isotropic etching. 2 In this work, the focus is on exploring isotr
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3

Lill, Thorsten. "(Invited) Atomic Layer Etching: Basics, New Developments & Applications." ECS Meeting Abstracts MA2024-02, no. 30 (2024): 2231. https://doi.org/10.1149/ma2024-02302231mtgabs.

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Atomic layer etching (ALE) is becoming an important technology for patterning and shaping of electronic and photonic devices. This tutorial briefly recaps the fundamentals of thermal, directional and plasma assisted atomic layer etching. Performance benefits and limitations for ALE in comparison to the continuous processing analogues such as reactive ion etching, radical and vapor etching are the consequence of the cyclic self-limited structure of ALE processes. Selection criteria for the appropriate etching technology for a given task will be presented. The enormous progress in the developmen
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4

Hamraoui, Lamiae, Tinghui Zhang, Angela Crespi, et al. "Atomic layer etching of gallium nitride using fluorine-based chemistry." Journal of Vacuum Science & Technology A 41, no. 3 (2023): 032602. http://dx.doi.org/10.1116/6.0002452.

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Atomic layer etching (ALE) of GaN on silicon substrates has been investigated using fluorine-based chemistry. The ALE process used for this study consists of a modification step using SF6 plasma and a removal step using argon plasma. Two configurations were studied in which the distance between the sample and the plasma source was modified. The energy scan, synergy, selective etching of GaFx by Ar+ ion bombardment, and self-limiting etching regime of the ALE of GaN were first investigated. An etch per cycle of 0.50 nm/cycle averaged over 100 cycles was reached for GaN ALE. The self-limiting re
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5

Hwang, Il-Hwan, Ho-Young Cha, and Kwang-Seok Seo. "Low-Damage and Self-Limiting (Al)GaN Etching Process through Atomic Layer Etching Using O2 and BCl3 Plasma." Coatings 11, no. 3 (2021): 268. http://dx.doi.org/10.3390/coatings11030268.

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This paper reports on the use of low-damage atomic layer etching (ALE) performed using O2 and BCl3 plasma for etching (Al)GaN. The proposed ALE process led to excellent self-limiting etch characteristics with a low direct current (DC) self-bias, which resulted in a high linearity between the etching depth and number of cycles. The etching damage was evaluated using several methods, including atomic force microscopy, photoluminescence (PL), and X-ray photoelectron spectroscopy, and the I–V properties of the recessed Schottky diodes were compared with those of digital etching performed using O2
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6

Jung, Junho, and Kyongnam Kim. "Atomic Layer Etching Using a Novel Radical Generation Module." Materials 16, no. 10 (2023): 3611. http://dx.doi.org/10.3390/ma16103611.

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To fabricate miniature semiconductors of 10 nm or less, various process technologies have reached their physical limits, and new process technologies for miniaturization are required. In the etching process, problems such as surface damage and profile distortion have been reported during etching using conventional plasma. Therefore, several studies have reported novel etching techniques such as atomic layer etching (ALE). In this study, a new type of adsorption module, called the radical generation module, was developed and applied in the ALE process. Using this module, the adsorption time cou
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7

Nakamura, Shohei, Atsushi Tanide, Takahiro Kimura, et al. "GaN damage-free cyclic etching by sequential exposure to Cl2 plasma and Ar plasma with low Ar+-ion energy at substrate temperature of 400 °C." Journal of Applied Physics 133, no. 4 (2023): 043302. http://dx.doi.org/10.1063/5.0131685.

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Damage-free atomic layer etching (ALE) of GaN was demonstrated using a cyclic process in which the chlorinated layer formed by Cl2 plasma exposure was removed by exposure to Ar plasma with energy-controlled ions when the substrate temperature was maintained at 400 °C. The layer chlorinated at 400 °C by Cl2 plasma exposure was found to be thinner than that chlorinated at 25 °C. Therefore, in the case of an Ar+-ion energy of 70 eV, the “ALE synergy” parameter, which quantifies the degree to which a process approaches the ideal ALE regime, decreased from 86% at a substrate temperature of 25 °C to
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8

Shim, Dahee, Jihyun Kim, Yongjae Kim, and Heeyeop Chae. "Plasma atomic layer etching for titanium nitride at low temperatures." Journal of Vacuum Science & Technology B 40, no. 2 (2022): 022208. http://dx.doi.org/10.1116/6.0001602.

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Isotropic plasma atomic layer etching (ALE) was developed for titanium nitride (TiN) through a three-step process: plasma oxidation, plasma fluorination, and thermal removal at low temperatures. In the plasma oxidation step, TiN was oxidized to form a titanium oxide (TiO2) layer with O radicals generated from O2 plasma at 100 °C. The TiO2 thickness was found to be saturated with plasma after an exposure time of 300 s, and the saturated thickness increased from 0.29 to 1.23 nm with increasing temperature and RF power. In the plasma fluorination step, the TiO2 layer was converted to titanium oxy
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9

Khan, M. B., Sh Shakeel, K. Richter, S. Ghosh, A. Erbe, and Yo M. Georgiev. "Atomic layer etching of nanowires using conventional reactive ion etching tool." Journal of Physics: Conference Series 2443, no. 1 (2023): 012004. http://dx.doi.org/10.1088/1742-6596/2443/1/012004.

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Abstract Innovative material and processing concepts are needed to further enhance the performance of complementary metal-oxide-semiconductor (CMOS) transistors-based circuits as the scaling limits are being reached. To supplement that, we report on the development of an atomic layer etching (ALE) process to fabricate small and smooth nanowires using a conventional dry etching tool. Firstly, a negative tone resist (hydrogen silsesquioxane) is spin-coated on Silicon Germanium-on-insulator (SiGeOI) samples and electron beam lithography is performed to create nanopatterns. These patterns act as a
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10

Kim, Jihyun, Dahee Shim, Yongjae Kim, and Heeyeop Chae. "Atomic layer etching of Al2O3 with NF3 plasma fluorination and trimethylaluminum ligand exchange." Journal of Vacuum Science & Technology A 40, no. 3 (2022): 032603. http://dx.doi.org/10.1116/6.0001616.

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In this study, a cyclic isotropic plasma atomic layer etching (ALE) process was developed for aluminum oxide that involves fluorination with NF3 plasma and ligand exchange with trimethylaluminum (TMA). The isotropic plasma ALE consists of two steps: fluorination and removal. During the fluorination step, the Al2O3 surface was fluorinated to AlOFx with NF3 plasma at 100 °C. The formation of the AlOFx layer was confirmed by x-ray photoelectron spectroscopy analysis, and the atomic fraction of fluorine on the surface was saturated at 25% after 50 s of plasma fluorination. The depths of the fluori
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11

Chae, Heeyeop, and Yongjae Kim. "(Invited) Plasma-Enhanced Atomic Layer Etching for Metals and Dielectric Materials." ECS Meeting Abstracts MA2023-02, no. 29 (2023): 1469. http://dx.doi.org/10.1149/ma2023-02291469mtgabs.

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The critical dimensions of semiconductor devices are continuously shrinking with 3D device structure and are approaching to nanometer scale. The demand for dimension control in angstrom level is drastically increasing also in etching processes. Atomic layer etching (ALE) processes are being actively studied and developed for various semiconductor, dielectric materials as well as metals. In this talk, various plasma-enhanced ALE (PEALE) processes will be discussed for isotropic and anisotropic patterning of metals and dielectric materials such as molibdenum, ruthenium, cobalt, titanium nitride,
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12

Radehaus, Marco, Stephan Wege, Christian Miersch, Elias Ricken, and Mario Krug. "Atomic Layer Etching of GaN and AlGaN Using CH4/H2, H2 and HCl Chemistry." ECS Meeting Abstracts MA2023-02, no. 29 (2023): 1468. http://dx.doi.org/10.1149/ma2023-02291468mtgabs.

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Modern microelectronic components for high-power and high-frequency applications require reliability and reproducibility of the production processes. Atomic layer etching (ALE) represents a key technology for achieving these requirements. An ALE sequence is characterized by a chemical modification step that affects only the top atomic layer of the surface (adhesion) and an ion assisted non-reactive inert gas etching step that removes only this chemically modified area due to creation of volatile byproducts. These two steps are separated by inert gas purge. This grants the etching of single ato
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13

Papalia, John, Nathan Marchack, Robert Bruce, Hiroyuki Miyazoe, Sebastian Engelmann, and Eric A. Joseph. "Applications for Surface Engineering Using Atomic Layer Etching - Invited Paper." Solid State Phenomena 255 (September 2016): 41–48. http://dx.doi.org/10.4028/www.scientific.net/ssp.255.41.

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Over the course of the past few years, the semiconductor industry has continued to invent and innovate profoundly to adhere to Moore’s Law and Dennard scaling. At each of the technology nodes starting with 45nm, new materials and integration techniques, such as high-K & metal gates, double patterning techniques, and now 3D FinFet / Trigate device geometries are being introduced in order to maintain device performance. This places a large burden on unit process development to accommodate and deliver advanced process capability and is growing the need for the ultimate etch solution: etching
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14

Chen, Chien-Wei, Wen-Hao Cho, Chan-Yuen Chang, et al. "CF4 plasma-based atomic layer etching of Al2O3 and surface smoothing effect." Journal of Vacuum Science & Technology A 41, no. 1 (2023): 012602. http://dx.doi.org/10.1116/6.0002210.

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Plasma-based Al2O3 atomic layer etching (pALE) has a reaction mechanism similar to thermal Al2O3 ALE (tALE). The main difference between the two methods is that pALE uses plasma instead of HF in tALE to fluorinate Al2O3 to AlF3. In this study, the CF4 plasma source commonly used for dry etching is combined with a self-developed low-ion-bombardment remote Al2O3 plasma-based ALE system to obtain Al2O3 plasma fluorination conditions, and then the AlCl(CH3)2 (dimethylaluminum chloride) precursor is used to develop the pALE Al2O3 process. In addition to using x-ray photoelectron spectroscopy to inv
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15

Chae, Heeyeop, and Daeun Hong. "Plasma Atomic Layer Etching of Dielectric Materials with Low Global Warming Fluoro-Ether Isomers." ECS Meeting Abstracts MA2024-02, no. 30 (2024): 2232. https://doi.org/10.1149/ma2024-02302232mtgabs.

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In this work, the comparative study of the plasmas of C5F10O and C4H3F7O isomers with low global warming potential (GWP) was conducted in plasma atomic layer etching (ALE) processes of dielectric materials. Plasma atomic layer etching processes for silicon oxide and silicon nitride were developed with perfluoropropyl vinyl ether (PPVE) and perfluoroisopropyl vinyl ether (PIPVE) as C5F10O isomers, and heptafluoropropyl methyl ether (HFE-347mcc3) and heptafluoroisopropyl methyl ether (HFE-347mmy) as C4H3F7O isomers. In the surface fluorination step, the dielectric surfaces were fluorinated with
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16

Kundu, Shreya, Leila Ghorbani, Frederic Lazzarino, and Stefan De Gendt. "(Invited) Investigating ALE Approaches for Novel Metal Oxide Patterning at Sub-100 Nm Pitch for High-Density Memory & Compute Applications." ECS Meeting Abstracts MA2024-02, no. 30 (2024): 2233. https://doi.org/10.1149/ma2024-02302233mtgabs.

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Atomic layer etching (ALE) continues to garner wide attention as a technique for controlled patterning of different materials.1,2 However, a substantial amount of these studies are carried out on blanket films. It is therefore pivotal to investigate the feasibility of ALE for patterning high-density features as it exhibits the potential to be the preferred etching method for novel materials in the semiconductor industry. This talk will focus on the impact of ALE in the patterning of complex metal oxides like InGaZnO and MgZnO. These metal oxides are potential contenders as channel materials in
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17

Kim, Yewon, Gyejun Cho, Okhyeon Kim, et al. "Atomic Layer Etching of Al2O3 Using F Radical and Al Precursors: Surface Reaction and Reaction Mechanism Study." ECS Meeting Abstracts MA2023-02, no. 29 (2023): 1447. http://dx.doi.org/10.1149/ma2023-02291447mtgabs.

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In order to overcome the miniaturization of semiconductor devices, devices with a three-dimensional (3D) structure, such as FinFET and 3D vertical NAND devices, were introduced. The manufacturing of 3D devices requires both anisotropic etching in the vertical direction and isotropic etching in the horizontal direction. Therefore, a new technology with atomic-level precision is required for isotropic etching, which is dependent on wet etching. It is the thermal atomic layer etching (ALE) process that meets these requirements. Since the first report in 2016, the thermal ALE processes by alternat
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18

Miyoshi, Nobuya, Nicholas McDowell, and Hiroyuki Kobayashi. "Atomic layer etching of titanium nitride with surface modification by Cl radicals and rapid thermal annealing." Journal of Vacuum Science & Technology A 40, no. 3 (2022): 032601. http://dx.doi.org/10.1116/6.0001827.

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Thermal atomic layer etching (ALE) is a promising method for isotropic etching with atomic level precision and high conformality over three-dimensional structures. In this study, a thermal ALE process for titanium nitride (TiN) films was developed using surface modification with a Cl2/Ar downstream plasma followed by infrared (IR) annealing of the films. The oxygen-free Cl2-based plasma was adopted to enable highly selective etching of TiN with regard to various materials. It was confirmed that spontaneous etching of TiN during radical exposure can be suppressed at a surface temperature of −10
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19

Osonio, Airah P., Takayoshi Tsutsumi, Yoshinari Oda, et al. "Area-selective plasma-enhanced atomic layer etching (PE-ALE) of silicon dioxide using a silane coupling agent." Journal of Vacuum Science & Technology A 40, no. 6 (2022): 062601. http://dx.doi.org/10.1116/6.0002044.

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A novel route to achieve an ideal plasma-enhanced atomic layer etching of silicon dioxide with self-limiting deposition and area-selective feature over silicon nitride is demonstrated in this work using a silane coupling agent and argon plasma. While monitoring the film thickness of silicon dioxide, self-limiting characteristics in both modification and etching steps are attained. Moreover, the dosing step revealed the selective formation of a modification layer on the oxide over the nitride film. In situ infrared spectroscopy results suggest the surface functionalization of the hydroxyl termi
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20

Messina, Daniel C., Kevin A. Hatch, Saurabh Vishwakarma, David J. Smith, Yuji Zhao, and Robert J. Nemanich. "Challenges in atomic layer etching of gallium nitride using surface oxidation and ligand-exchange." Journal of Vacuum Science & Technology A 41, no. 2 (2023): 022603. http://dx.doi.org/10.1116/6.0002255.

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Two atomic layer etching (ALE) methods were studied for crystalline GaN, based on oxidation, fluorination, and ligand exchange. Etching was performed on unintentionally doped GaN grown by hydride vapor phase epitaxy. For the first step, the GaN surfaces were oxidized using either water vapor or remote O2-plasma exposure to produce a thin oxide layer. Removal of the surface oxide was addressed using alternating exposures of hydrogen fluoride (HF) and trimethylgallium (TMG) via fluorination and ligand exchange, respectively. Several HF and TMG super cycles were implemented to remove the surface
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21

Suyatin, Dmitry B., Reza Jafari Jam, Mohammad Karimi, Sabbir A. Khan, and Jonas Sundqvist. "(Invited) ALE Based Manufacturing of Nanostructures below 20 Nm." ECS Meeting Abstracts MA2022-02, no. 31 (2022): 1115. http://dx.doi.org/10.1149/ma2022-02311115mtgabs.

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Continued downscaling of electronic components, such as transistors and capacitors for advanced processors and memory chips, is ever harder and at the same time very important for our society. Atomic layer etching (ALE) is the most advanced etching process used in industry today. ALE enables material removal with atomic precision and is potentially damage-free for remaining material, which motivated its introduction to the industry. Together with atomic layer deposition (ALD) and atomic layer cleaning (ALC) ALE enables the new era of atomic-scale processing which is critical for the most advan
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Jafari Jam, Reza, Yoana Ilarionova, Amin Karimi, Muhammad H. Asif, Dmitry B. Suyatin, and Jonas Sundqvist. "Comparative Analysis of Surface Characterization Techniques for Atomic Layer Etching." ECS Meeting Abstracts MA2023-02, no. 29 (2023): 1467. http://dx.doi.org/10.1149/ma2023-02291467mtgabs.

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The growing demand for precise atomic level control in device fabrication has led to the rising popularity of Atomic Layer Etching (ALE).1-3 As the name implies, the process facilitates layer-by-layer material removal in an atomic scale, making low surface damage one of the key features of this process. The low-power ion bombardment and the self-limited nature of different process steps help to reduce the damage induced by ALE. However, the damage is not easy to characterize. Atomic Force Microscopy (AFM) is one of the methods that is widely used for surface characterization. However, roughnes
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23

Wang, Peizhi, and Fengzhou Fang. "Real-time time-dependent DFT study of laser-enhanced atomic layer etching of silicon for damage-free nanostructure fabrication." Journal of Applied Physics 132, no. 14 (2022): 144303. http://dx.doi.org/10.1063/5.0109818.

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Atomic layer etching (ALE) has emerged as a promising technique that enables the manufacturing of atomically controlled nanostructures toward next-generation nanoelectronics. However, the high-energy ion bombardment (typically 40–60 eV for Si) in current plasma ALE would cause damage to structures and even underlying substrates, which is detrimental to processing controllability as well as device performances. This problem could be addressed by introducing an additional laser source into the plasma ALE process to reduce the required ion energy, namely, laser-enhanced ALE. To elucidate the fund
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Bassett, Derek, and Kate Abel. "Modeling and Optimization of Wet ALE Process." ECS Meeting Abstracts MA2024-02, no. 31 (2024): 2279. https://doi.org/10.1149/ma2024-02312279mtgabs.

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Atomic layer etching (ALE) has become an important process for semiconductor device manufacturing due to its unique ability to control surface etching with single molecular level control. ALE first began in the laboratory over thirty years ago, and in the past ten years it has matured into an important part of the semiconductor manufacturing process with several solutions available on the market for high volume manufacturing. Most ALE processes have been developed in a vapor or rarified gas environment, often using a thermal or plasma process to facilitate the required chemical reactions. (1)
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Miersch, Christian, Stephan Wege, Johannes Heitmann, and Franziska Christine Beyer. "Morphological and Electrical Characterization of AlGaN/GaN Heterostructures Modified By Atomic Layer Etching." ECS Meeting Abstracts MA2023-02, no. 29 (2023): 1448. http://dx.doi.org/10.1149/ma2023-02291448mtgabs.

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Modern microelectronic components for high-power and high-frequency applications based on III-V compound semiconductors offer high break down voltage (GaN: 5 MV/cm and AlN: 15 MV/cm) at low specific on-resistance. However, it requires reliability and reproducibility of the production processes. Going to higher frequencies (5 GHz and beyond) and more integration in consumer electronics, smaller structure sizes are needed. This is going along with increasing demands on the manufacturing processes like dry etching. The main goal is to reach smaller and high controllable etching rates, going down
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Elam, Jeffrey W. "(Invited) In Situ Measurements during ALD/ALE Processes." ECS Meeting Abstracts MA2024-02, no. 30 (2024): 2246. https://doi.org/10.1149/ma2024-02302246mtgabs.

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Atomic layer deposition (ALD) and atomic layer etching (ALE) provide exquisite control over the addition and removal of thin film materials and are invaluable tools for semiconductor manufacturing and a wide range of other applications. However, it is not always clear why some ALD/ALE processes succeed while others fail. Performing in situ measurements during ALD/ALE can unravel the detailed surface chemistries underlying these processes to elucidate the reaction mechanisms and ultimately yield more robust and reliable processes. In this presentation, I will motivate the need for in situ measu
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Graugnard, Elton. "(Invited) Atomic Layer Processing of MoS2." ECS Meeting Abstracts MA2023-02, no. 29 (2023): 1446. http://dx.doi.org/10.1149/ma2023-02291446mtgabs.

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Molybdenum disulfide (MoS2) is one of several transition metal dichalcogenides consisting of a layer of transition atoms sandwiched between layers of chalcogens. Interest in MoS2 has been driven by its 1.8 eV direct electronic band gap in monolayer form and its moderate electron mobility (10-100 cm2/Vs) even when only three atoms (~6.5 Å) thick. These properties offer potential for retaining or improving speed and efficiency in scaled electronic devices. Advancing MoS2 and other 2D materials into high volume manufacturing of semiconductor devices requires scalable deposition and etching proces
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Chiappim, William, Benedito Botan Neto, Michaela Shiotani, et al. "Plasma-Assisted Nanofabrication: The Potential and Challenges in Atomic Layer Deposition and Etching." Nanomaterials 12, no. 19 (2022): 3497. http://dx.doi.org/10.3390/nano12193497.

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The growing need for increasingly miniaturized devices has placed high importance and demands on nanofabrication technologies with high-quality, low temperatures, and low-cost techniques. In the past few years, the development and recent advances in atomic layer deposition (ALD) processes boosted interest in their use in advanced electronic and nano/microelectromechanical systems (NEMS/MEMS) device manufacturing. In this context, non-thermal plasma (NTP) technology has been highlighted because it allowed the ALD technique to expand its process window and the fabrication of several nanomaterial
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Fernandes Paes Pinto Rocha, Pedro, Laura Vauche, Patricia Pimenta-Barros, Simon Ruel, René Escoffier, and Julien Buckley. "Recent Developments and Prospects of Fully Recessed MIS Gate Structures for GaN on Si Power Transistors." Energies 16, no. 7 (2023): 2978. http://dx.doi.org/10.3390/en16072978.

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For high electron mobility transistors (HEMTs) power transistors based on AlGaN/GaN heterojunction, p-GaN gate has been the gate topology commonly used to deplete the two dimensional electron gas (2-DEG) and achieve a normally-OFF behavior. But fully recessed MIS gate GaN power transistors or MOSc-HEMTs have gained interest as normally-OFF HEMTs thanks to the wider voltage swing and reduced gate leakage current when compared to p-GaN gate HEMTs. However the mandatory AlGaN barrier etching to deplete the 2-DEG combined with the nature of the dielectric/GaN interface generates etching-related de
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Partridge, Jonathan Lawrence, and Steven M. George. "(Student Award, 1st Place, Invited) Thermal Etching of Metal Oxides: Mechanisms Revealed By Quadrupole Mass Spectrometry." ECS Meeting Abstracts MA2022-02, no. 18 (2022): 868. http://dx.doi.org/10.1149/ma2022-0218868mtgabs.

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Thermal etching of metal oxides can occur spontaneously or by sequential surface reactions during atomic layer etching (ALE). This thermal etching does not require the use of plasmas or energetic species to remove material. Thermal etching can be studied by measuring the decrease of film thickness. However, the mechanisms of thermal etching still require the identification of volatile etch products. To address this issue, we have used quadrupole mass spectrometry (QMS) to detect volatile etch products during thermal etching. A custom reactor was built to measure the etch products with high sen
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Sekine, Makoto. "(Invited) Surface Analysis of GaN by Cyclic Etching Process for ALE of III-V Materials." ECS Meeting Abstracts MA2024-02, no. 30 (2024): 2234. https://doi.org/10.1149/ma2024-02302234mtgabs.

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In the fabrication of next-generation power electronic devices based on the III-V materials i.e. gallium nitride (GaN), AlGaN, etc., atomic layer etching (ALE) with the cyclic process of ion irradiation and Cl adsorption steps has been attracted for the reduction of plasma induced damages and the precise definition of etch depth. For controlling the GaN ALE, we investigated the surface layer of GaN at each Ar ion and Cl radical reaction step using a beam experiments with in situ X-ray photoelectron spectroscopy (XPS).[1,2] Samples were GaN films on a sapphire substrate by Hydride Vapor Phase E
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Chen, Hsin Chu, An-Chen Liu, Yung-Yu Lai, and Hao-Chung Kuo. "Analysis of Operational Characteristics of AlGaN/GaN MIS-HEMT with Different Slant-Recessed-Gate Structures." ECS Meeting Abstracts MA2023-02, no. 29 (2023): 1465. http://dx.doi.org/10.1149/ma2023-02291465mtgabs.

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Purpose of Work Recessed-gate metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) have emerged as a promising technology for normally-off operation because of their ability to withstand high gate voltage sweeps while maintaining low levels of leakage current [1, 2]. Despite their excellent performance, the etch to leave nanometer-thin layers of AlGaN has proven to be a significant challenge due to difficulties in precisely controlling the etching process. Achieving a positive threshold voltage (Vth) while maintaining the high electron mobility characteristic of the two
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Yun, SeongUk, Andrew C. Kummel, and Kesong Wang. "Controlled Surface Polarity and Crystallinity of Gallium Nitride on Si (111) Using Atomic Layer Deposition for Selective Wet-Etch and STEM Analysis." ECS Meeting Abstracts MA2024-02, no. 36 (2024): 2528. https://doi.org/10.1149/ma2024-02362528mtgabs.

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Gallium nitride (GaN) has gained interest as photoelectronic materials and a buffer layer for other III-V deposition with applications in power electronics operated at high voltage and high temperature. The crystallinity and polarity of III-V semiconductors have a key role for the passivation layers on microLED, the formation of 2D electron gasses in high electron mobility transistors, and for templating growth of piezoelectric materials. The atomic layer annealing (ALA) was reported to improve the crystallinity of the III-V compounds (aluminum nitride) at low temperatures as compared to the c
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34

Murdzek, Jessica A., and Steven M. George. "(Invited) Ligand Addition for Thermal Atomic Layer Etching of Metals." ECS Meeting Abstracts MA2022-02, no. 31 (2022): 1117. http://dx.doi.org/10.1149/ma2022-02311117mtgabs.

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Thermal atomic layer etching (ALE) is typically defined by sequential surface reactions. Thermal ALE can be viewed as the reverse of atomic layer deposition (ALD). Thermal ALE is usually performed with two steps: modification of the surface and removal of the modified surface. The modification can be oxidation, fluorination, or chlorination. The removal step is often a ligand-exchange reaction, creating stable volatile species that leave the surface, leading to a net removal of material. For example, aluminum oxide can be etched using thermal ALE with HF to fluorinate the surface and trimethyl
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35

Du, Fangzhou, Yang Jiang, Zhanxia Wu, et al. "The Atomic Layer Etching Technique with Surface Treatment Function for InAlN/GaN Heterostructure." Crystals 12, no. 5 (2022): 722. http://dx.doi.org/10.3390/cryst12050722.

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This paper studied an atomic layer etching (ALE) technique with a surface treatment function for InAlN/GaN heterostructures with AlN spacer layers. Various parameters were attempted, and 30 s O2 + 15 W BCl3 was chosen as the optimal recipe. The optimal ALE approach exhibited satisfactory etching results, with regard to the etch-stop effect, compared with other techniques. The atomic force microscopy (AFM) results showed an etching per cycle (EPC) value of 0.15 nm/cycle, with a 0.996 fit coefficient and root mean square (RMS) surface roughness of around 0.61 nm (0.71 nm for as-grown sample), wh
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36

Roozeboom, Fred. "(Gordon E. Moore Medal for Outstanding Achievement in SSS&T) Moore’s Law Sustained by Non-Lithographic Technologies." ECS Meeting Abstracts MA2023-01, no. 29 (2023): 1774. http://dx.doi.org/10.1149/ma2023-01291774mtgabs.

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Since G. Moore’s historical observation [1] that the functionality per chip (bits, transistors) as well as MPU performance (clock frequency in MHz × instructions per clock = millions of instructions per second) doubles every 1.5 to 2 years, the semiconductor industry has continued to grow to over 600 G$ in 2022 [2]. The IRDS 2022 Roadmap [3] catches the scaling challenges faced for the upcoming decades by the term ‘3D Power Scaling’. This period is the third in a sequence of eras that started early on with straightforward geometrical scaling by continuous shortening of the wavelengths (from re
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Tsai, Yuanlu, Zhiteng Li, and Shaojie Hu. "Recent Progress of Atomic Layer Technology in Spintronics: Mechanism, Materials and Prospects." Nanomaterials 12, no. 4 (2022): 661. http://dx.doi.org/10.3390/nano12040661.

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The atomic layer technique is generating a lot of excitement and study due to its profound physics and enormous potential in device fabrication. This article reviews current developments in atomic layer technology for spintronics, including atomic layer deposition (ALD) and atomic layer etching (ALE). To begin, we introduce the main atomic layer deposition techniques. Then, in a brief review, we discuss ALE technology for insulators, semiconductors, metals, and newly created two-dimensional van der Waals materials. Additionally, we compare the critical factors learned from ALD to constructing
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38

Nieminen, Heta-Elisa, Mykhailo Chundak, Mikko J. Heikkilä, et al. "In vacuo cluster tool for studying reaction mechanisms in atomic layer deposition and atomic layer etching processes." Journal of Vacuum Science & Technology A 41, no. 2 (2023): 022401. http://dx.doi.org/10.1116/6.0002312.

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In this paper, we introduce a vacuum cluster tool designed specifically for studying reaction mechanisms in atomic layer deposition (ALD) and atomic layer etching (ALE) processes. In the tool, a commercial flow-type ALD reactor is in vacuo connected to a set of UHV chambers so that versatile surface characterization is possible without breaking the vacuum environment. This way the surface composition and reaction intermediates formed during the precursor or etchant pulses can be studied in very close to true ALD and ALE processing conditions. Measurements done at each step of the deposition or
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39

Hatch, Kevin A., Daniel C. Messina, and Robert J. Nemanich. "Plasma enhanced atomic layer deposition and atomic layer etching of gallium oxide using trimethylgallium." Journal of Vacuum Science & Technology A 40, no. 4 (2022): 042603. http://dx.doi.org/10.1116/6.0001871.

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Atomic layer etching driven by self-limiting thermal reactions has recently been developed as a highly conformal and isotropic technique for low damage atomic scale material removal by sequential exposures of vapor phase reactants. Gallium oxide (Ga2O3) is currently among the materials of interest due to a large variety of applications including power electronics, solar cells, gas sensors, and photon detectors. In this study, Ga2O3 was deposited by plasma enhanced atomic layer deposition using trimethylgallium [TMG, Ga(CH3)3] and O2 plasma at a substrate temperature of 200 °C. We report a newl
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40

Agarwal, Ankur, and Mark J. Kushner. "Plasma atomic layer etching using conventional plasma equipment." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 27, no. 1 (2009): 37–50. http://dx.doi.org/10.1116/1.3021361.

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41

Xie, Lu, Huilong Zhu, Yongkui Zhang, et al. "Investigation on Ge0.8Si0.2-Selective Atomic Layer Wet-Etching of Ge for Vertical Gate-All-Around Nanodevice." Nanomaterials 11, no. 6 (2021): 1408. http://dx.doi.org/10.3390/nano11061408.

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For the formation of nano-scale Ge channels in vertical Gate-all-around field-effect transistors (vGAAFETs), the selective isotropic etching of Ge selective to Ge0.8Si0.2 was considered. In this work, a dual-selective atomic layer etching (ALE), including Ge0.8Si0.2-selective etching of Ge and crystal-orientation selectivity of Ge oxidation, has been developed to control the etch rate and the size of the Ge nanowires. The ALE of Ge in p+-Ge0.8Si0.2/Ge stacks with 70% HNO3 as oxidizer and deionized (DI) water as oxide-removal was investigated in detail. The saturated relative etched amount per
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42

Fischer, Andreas, and Thorsten Lill. "Plasma application in atomic layer etching." Physics of Plasmas 30, no. 8 (2023). http://dx.doi.org/10.1063/5.0158785.

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Atomic layer etching (ALE) has emerged as a promising technique for the precise and controlled removal of materials in nanoscale devices. ALE processes have gained significant attention due to their ability to achieve high material selectivity, etch uniformity, and atomic-scale resolution. This article provides a perspective of the important role of plasma in ALE including thermal ALE for nanometer-scale device manufacturing. Advantages as well as challenges of ALE are discussed in contrast to classic reactive ion etching. A tally-up of known plasma-based ALE processes is listed, and novel the
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43

Fathzadeh, Atefeh, Philippe Bezard, Maxime Darnon, et al. "Transient-assisted plasma etching (TAPE): Concept, mechanism, and prospects." Journal of Vacuum Science & Technology A 42, no. 3 (2024). http://dx.doi.org/10.1116/6.0003380.

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Atomic layer etching (ALE) schemes are often deemed economically unviable due to their slow pace and are not suited for every material/hard-mask combination. Conversely, plasma etching presents pattern profile challenges because of its inability to independently control ion and neutral flux. In this work, we introduce a new cyclic transient-based process, called transient-assisted plasma etching (TAPE). A cycle of TAPE is a short exposure step to a sustained flow of reactant before the reactant gas injection is stopped in the second step, resulting in a plasma transient. As the plasma ignites
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44

Bai Sheng-Bo, Chen Zhi-Hua, Zhang Huan-Hao, Chen Gao-Jie, Cao Shi-Cheng, and Zhang Sheng-Bo. "Rate optimization of atomic layer etching process of silicon." Acta Physica Sinica, 2023, 0. http://dx.doi.org/10.7498/aps.72.20231022.

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With the shrink of critical dimensions of semiconductor devices to a few nanometers, atomic layer etching (ALE) has become an important technique to achieve single-atom resolution. ALE decouples plasma etching into two self-limiting reaction processes:passivation and etching processes, allowing for sequential removal of material atomic layer by layer. Therefore, it suffers from the issue of low etch rate. In this paper, the variation in surface substance coverage during the passivation and etching processes is investigated numerically to optimize the duration for both passivation and etching.
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45

Kang, Hojin, Sangbae Lee, Minsung Jeon, and Heeyeop Chae. "Plasma atomic layer etching of tantalum nitride with surface fluorination and Ar ion sputtering." Journal of Vacuum Science & Technology A 43, no. 2 (2025). https://doi.org/10.1116/6.0004259.

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A comparative study on the atomic layer etching (ALE) process window was conducted for tantalum nitride (TaN) using nitrogen trifluoride (NF3) and carbon tetrafluoride (CF4) plasmas. The TaN surface was fluorinated with NF3 or CF4 plasmas, followed by the removal of the fluorinated layer through Ar ion sputtering. The fluorine radical density in the plasma was analyzed via optical emission spectroscopy, and the chemical composition and bonding of the fluorinated layers were characterized using x-ray photoelectron spectroscopy. Ta–Fx bonds were identified in the NF3 plasma fluorinated layer, wh
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46

Kim, Yongjae, Hojin Kang, Heeju Ha, et al. "Plasma atomic layer etching of ruthenium with surface fluorination and ion bombardment." Plasma Processes and Polymers, November 16, 2023. http://dx.doi.org/10.1002/ppap.202300161.

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AbstractThe plasma atomic layer etching (ALE) process for Ru was developed with surface fluorination and ion bombardment. We employed two methods for surface fluorination: (i) fluorocarbon deposition using CHF3 or C4F8 plasmas and (ii) chemisorption and diffusion with CF4 plasma. C4F8 plasma generated a more fluorine rich fluorocarbon layer on the Ru surface compared with CHF3 plasma, and a higher etch per cycle (EPC) of 1.5 nm/cycle was achieved with C4F8 plasma, in contrast to the 0.6 nm/cycle achieved with CHF3 plasma. Moreover, chemisorption and diffusion with CF4 plasma yielded an EPC of
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47

Ho, Wan Ying, Yi Chao Chow, Zachary Biegler, et al. "Atomic layer etching (ALE) of III-nitrides." Applied Physics Letters 123, no. 6 (2023). http://dx.doi.org/10.1063/5.0159048.

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Atomic layer etching (ALE) was performed on (Al, In, Ga)N thin films using a cyclic process of alternating Cl2 gas absorption and Ar+ ion bombardment in an inductively coupled plasma etcher system. The etch damage was characterized by comparing photoluminescence of blue single quantum well light-emitting diodes before and after the etch as well as bulk resistivities of etched p-doped layers. It was found that etched surfaces were smooth and highly conformal, retaining the step-terrace features of the as-grown surface, thus realizing ALE. Longer exposures to the dry etching increased the bulk r
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48

Hirata, Akiko, Masanaga Fukasawa, Jomar U. Tercero, et al. "Five-step plasma-enhanced atomic layer etching of silicon nitride with a stable etched amount per cycle." Japanese Journal of Applied Physics, March 29, 2022. http://dx.doi.org/10.35848/1347-4065/ac61f6.

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Abstract Atomic layer etching is an advanced plasma etching technique that enables the atomic-precision control. In this study, the effects of surface conditions on the stability of the etched amount per cycle (EPC) in silicon nitride (SiN) plasma-enhanced atomic layer etching (PE-ALE) were examined. A single cycle of SiN PE-ALE consisted of two steps: hydrofluorocarbon (HFC) absorption step and argon-ion (Ar+) desorption step. After a few cycles, an etch-stop of SiN occurred due to the HFC deposition. An oxygen-plasma ashing step was introduced after desorption step, which made three-step SiN
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49

FUKASAWA, Masanaga, Toshifumi IRISAWA, Hiroyuki OTA, Yoshihiro Hayashi, and Meishoku Masahara. "High selective atomic layer etching in combination with area-selective deposition for atomic-scale process design." Japanese Journal of Applied Physics, May 27, 2025. https://doi.org/10.35848/1347-4065/addd28.

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Abstract We investigated the critical process steps to realize high selective SiO2 atomic layer etching (ALE) in combination with area-selective deposition (ASD) of carbon mask. To realize high selective etching, it is important to effectively utilize the difference in incubation time of the carbon deposition on different surfaces. It was found that the incubation time of carbon deposition on SiO2 can be controlled by adjusting the amount of oxygen from the plasma and substrate. As a result, ultra-high selective etching can be realized by combining ASD with CH4/O2/Ar plasma for carbon mask dep
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50

Smith, Taylor G., Ali M. Ali, Jean-François de Marneffe, and Jane P. Chang. "Plasma nitridation for atomic layer etching of Ni." Journal of Vacuum Science & Technology A 42, no. 2 (2024). http://dx.doi.org/10.1116/6.0003263.

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Nickel (Ni) and its alloys are important multifunctional materials for the fabrication of integrated circuits, as either the absorber for the extreme ultraviolet lithography masks and/or interconnect metals at the nanometer scale. However, these applications require that Ni to be patterned controllably, selectively, and anisotropically—requirements that can only be met with a plasma based atomic layer etch (ALE) process. In this work, a plasma-thermal ALE approach is developed to pattern Ni, utilizing a nitrogen plasma to form NixN at the surface, formic acid (FA) vapor to selectively remove t
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