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Journal articles on the topic 'Plasma-based ion deposition'

Author: Grafiati
Published: 28 May 2022
Last updated: 31 July 2025

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1

Rossnagel, S. M., and J. J. Cuomo. "Ion-Beam-Assisted Deposition and Synthesis." MRS Bulletin 12, no. 2 (1987): 40–51. http://dx.doi.org/10.1557/s0883769400068391.

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Concurrent energetic particle bombardment during film deposition can strongly modify the structural and chemical properties of the resulting thin film. The interest in this technique, ion-assisted deposition, comes about because it can be used to produce thin films with properties not achievable by conventional deposition. Bombardment by low energy ions occurs during almost all plasma-based thin film deposition techniques. Bombardment of a growing film, particularly by accelerated ions, can also be combined with non-plasma-based deposition techniques, such as evaporation, to simulate some of t
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2

Rossnagel, S. M., and J. J. Cuomo. "Ion Beam Deposition, Film Modification and Synthesis." MRS Bulletin 13, no. 12 (1988): 40–45. http://dx.doi.org/10.1557/s0883769400063685.

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Ion beam processing for thin film deposition is rapidly overtaking some of the more conventional plasma-based thin film processing techniques. This is due to strong improvements in the types and reliabilities of the sources available as well as a growing understanding of the advantages and capabilities of using ion beams.An ion beam process can be differentiated from a plasma-based process in that the plasma in an ion beam is generated away from the sample and a beam of ions is directed at the sample. In a plasma-based process, the sample is usually immersed in the plasma. This highlights the
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3

Béchu, S., O. Maulat, Y. Arnal, D. Vempaire, A. Lacoste, and J. Pelletier. "Multi-dipolar plasmas for plasma-based ion implantation and plasma-based ion implantation and deposition." Surface and Coatings Technology 186, no. 1-2 (2004): 170–76. http://dx.doi.org/10.1016/j.surfcoat.2004.04.036.

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4

Ryabchikov, Alexander, Denis Sivin, and Igor Stepanov. "Development of New Ion and Plasma Surface Modification Methods." Advanced Materials Research 1084 (January 2015): 221–24. http://dx.doi.org/10.4028/www.scientific.net/amr.1084.221.

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The review is devoted to the analysis of the present state-of-the-art and development trends of the new methods and equipment being developed in Tomsk Polytechnic University (TPU), for DC vacuum arc-based ion and plasma materials processing. The features and advantages are demonstrated for the method of high-concentration implantation with compensation of surface ion sputtering by metal plasma deposition, the method of metal plasma deposition under repetitively – pulsed ion mixing with ion beams and plasma flow formed in the «Raduga-5» source, and the method of coating deposition and ion impla
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5

Ikehata, T., R. Sasaki, T. Tanaka, and K. Yukimura. "Positive-plasma-bias method for plasma-based ion implantation and deposition." Surface and Coatings Technology 204, no. 18-19 (2010): 2881–91. http://dx.doi.org/10.1016/j.surfcoat.2010.03.004.

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6

Mathad, G. S., D. W. Hess, and M. Meyyappan. "Plasma Processing for Silicon-Based Integrated Circuits." Electrochemical Society Interface 8, no. 2 (1999): 34–40. http://dx.doi.org/10.1149/2.f07992if.

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During the last quarter century or so, plasma processing has become a critical industrial technology for the development and manufacture of semiconductor devices. Gaseous plasmas have been used for sputter and chemical vapor deposition of thin films, pattern transfer in mask fabrication, etching of thin films, resist stripping, surface modification and as an ion source in ion implantation. It is the most pervasive technology in the manufacture of silicon-based integrated circuits.
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7

Misiruk, Ivan O., Oleksandr I. Timoshenko, Valeriy S. Taran, and Igor E. Garkusha. "Non-self-sustained discharge with hollow anode for plasma-based surface treatment." Nukleonika 61, no. 2 (2016): 195–99. http://dx.doi.org/10.1515/nuka-2016-0033.

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Abstract The paper discusses plasma methods for surface modification using the non-self-sustained glow discharge with a hollow anode. This discharge is characterised by low voltage and high values of electron and ion currents. It can be easily excited in vacuum-arc installations that are widely used for coatings deposition. It is shown that such type of discharge may be effectively used for ion pumping, film deposition, ion etching, diffusion saturation of metallic materials, fusion and brazing of metals, and for combined application of above mentioned technologies in a single vacuum cycle.
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8

Meyyappan, M., and T. R. Govindan. "Plasma Process Modeling for Integrated Circuits Manufacturing." VLSI Design 6, no. 1-4 (1998): 409–12. http://dx.doi.org/10.1155/1998/27636.

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A reactor model for plasma-based deposition and etching is presented. Two-dimensional results are discussed in terms of plasma density, ion flux, and ion energy. Approaches to develop rapid CAD-type models are discussed.
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9

Yukimura, Ken, Xinxin Ma, and Takashi Ikehata. "TiN deposition and ion current distribution for trench target by plasma-based ion implantation and deposition." Surface and Coatings Technology 193, no. 1-3 (2005): 17–21. http://dx.doi.org/10.1016/j.surfcoat.2004.08.133.

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10

Dostanko, A. P., S. I. Madveyko, E. V. Telesh, S. N. Melnikov, S. M. Zavadski, and D. A. Golosov. "Plasma Systems in Thin Film Technology." Doklady BGUIR 22, no. 2 (2024): 20–31. http://dx.doi.org/10.35596/1729-7648-2024-22-2-20-31.

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The article discusses the current trends in the development of ion-plasma systems for ion processing and thin film deposition. Application of pulsed reactive magnetron sputtering for deposition of vanadium oxide films and dependence of process parameters on power supply frequency characteristics, peculiarities and application of direct ion-beam deposition for formation of coatings based on SiO2 for optical coatings, SiO2, CH, CN, CHF for orientation coatings of LCD displays, wear-resistant coatings of diamond-like carbon (α-C) and carbon nitride (CNx) are considered. The advantages of continuo
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11

YUKIMURA, Ken, and Ronghua WEI. "A New Trend of Plasma-Based Ion Implantation and Deposition." Journal of Plasma and Fusion Research 80, no. 4 (2004): 281–88. http://dx.doi.org/10.1585/jspf.80.281.

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12

Chu, Paul K. "8th International Workshop on Plasma-Based Ion Implantation and Deposition." Plasma Processes and Polymers 2, no. 4 (2005): 340–41. http://dx.doi.org/10.1002/ppap.200500037.

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13

Kadirbekova, Kutpinisa, and Zaripa Abdikulova. "Research of the structure and properties of nanostructured coatings based on chrome." Vibroengineering Procedia 58 (May 15, 2025): 300–306. https://doi.org/10.21595/vp.2025.24967.

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Nanostructured chromium-based coatings have been researched. In some cases, it is expedient to use vacuum methods of deposition of chromium coatings by methods of thermal evaporation of pure chromium from tungsten coils or by ion-plasma (magnetron) sputtering method. Due to the low deposition temperature of coatings, there is a possibility of their formation on metallic and non-metallic materials. Based on the above, it is necessary to note the relevance of the study of the technology for the formation of chromium-based coatings by the ion-plasma method. To apply wear-resistant chromium coatin
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14

Kralkina, Elena A., Polina A. Nekludova, Alexander M. Nikonov, Alexandr A. Airapetov, Vadim A. Sologub, and Nikolay A. Dyuzhev. "Formation of Nanosized Coatings in Hybrid Plasma Reactor Combining Magnetron or Arc Deposition with RF Plasma Assistance." Materials Science Forum 900 (July 2017): 137–40. http://dx.doi.org/10.4028/www.scientific.net/msf.900.137.

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The hybrid plasma reactor is based on the combined magnetron or arc discharge and radio-frequency inductive discharge located in the external magnetic field. Magnetron or arc discharge provides the generation of atoms and ions of the target materials while the flow of accelerated ions used for the ion assistance is provided by the RF inductive discharge. An external magnetic field is used to optimize the power input to the discharge, to increase the ion current density in the realm of substrate and to enhance the area of uniform plasma. The high value of the ion flow bombarding the substrate g
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15

Yukimura, Ken. "Recent Researches of Plasma-based Ion Implantation and Deposition in Japan." IEEJ Transactions on Fundamentals and Materials 123, no. 8 (2003): 715–18. http://dx.doi.org/10.1541/ieejfms.123.715.

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16

Liu, Xuanyong, Zengfeng Di, Paul K. Chu, and Stephan Mändl. "Preface – 14th International Conference on Plasma-Based Ion Implantation and Deposition." Surface and Coatings Technology 365 (May 2019): 1. http://dx.doi.org/10.1016/j.surfcoat.2019.03.052.

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17

Anders, André. "A structure zone diagram including plasma-based deposition and ion etching." Thin Solid Films 518, no. 15 (2010): 4087–90. http://dx.doi.org/10.1016/j.tsf.2009.10.145.

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18

Márquez, Adriana, Sonia P. Brühl, Paul K. Chu, and Stephan Mändl. "Preface - 13th International Conference on Plasma-Based Ion Implantation and Deposition." Surface and Coatings Technology 312 (February 2017): 1. http://dx.doi.org/10.1016/j.surfcoat.2017.02.003.

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19

Stepanov, Igor, Alexander Ryabchikov, and Denis Sivin. "Very Broad Metal Ion Beam Source for Ion Implantation and Coating Deposition Technologies." Advanced Materials Research 880 (January 2014): 288–91. http://dx.doi.org/10.4028/www.scientific.net/amr.880.288.

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The paper describes high broad metal ion source based on dc macroparticle filtered vacuum arc plasma generation with the dc ion-beam extraction. The possibility of formation of pseudo ribbon beam of metal ions with the parameters: ion beam length 0.6 m, ion current up to 0.2 A, accelerating voltage 40 kV, and ion energy up to 160 kV has been demonstrated. The pseudo ribbon ion beam is formed from dc driven vacuum arc plasma. The results of investigation of the vacuum arc evaporator ion-emission properties are presented. The influence of magnetic field strength near the cathode surface on the a
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20

Boulard, François, Valentin Bacquié, Aurélien Tavernier, and Nicolas Possémé. "Role of SiCl4 addition in CH3F/O2 based chemistry for Si3N4 etching selectively to SiO2, SiCO, and Si." Journal of Vacuum Science & Technology A 41, no. 3 (2023): 033002. http://dx.doi.org/10.1116/6.0002434.

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Dry etching of amorphous silicon nitride (Si3N4) selectively toward silicon dioxide (SiO2), silicon oxicarbide (SiCO), and crystalline silicon (c-Si) in an inductive coupled plasma reactor using CHF3/O2/He chemistry with SiCl4 addition is studied. Plasma exposure of c-Si, SiO2, and SiCO leads to an oxifluoride deposition. The deposition rate is the same for all these materials and increases linearly with the amount of SiCl4 added. On the other hand, Si3N4 etching is observed at very small amount of SiCl4 added (2 SCCM), while oxide deposition takes place at higher SiCl4 flow (10 SCCM). Quasi-
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21

Ma, X. X., K. Yukimura, and T. Muraho. "Ion sheath evolution and plasma replenishment inside an 80-mm-diameter pipe for plasma-based ion implantation and deposition." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 206 (May 2003): 787–90. http://dx.doi.org/10.1016/s0168-583x(03)00849-8.

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22

Taran, V. S., I. E. Garkusha, O. I. Tymoshenko, et al. "Development of Niobium Based Coatings Prepared by Ion-Plasma Vacuum-Arc Deposition." Plasma Medicine 10, no. 1 (2020): 61–69. http://dx.doi.org/10.1615/plasmamed.2020034060.

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23

Wada, Tadahiro, Jun Nakanishi, Yasuhiro Miki, Makoto Asano, Koji Iwamoto, and Hiroyuki Hanyu. "Surface Modification of Aluminum Alloy Using Plasma Based Ion Implantation and Deposition." Advanced Materials Research 488-489 (March 2012): 960–66. http://dx.doi.org/10.4028/www.scientific.net/amr.488-489.960.

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Aluminum alloys are used for mechanical parts, but the alloys have poor wear-resistance. To increase their wear resistance, a hard coating is applied to the surface of the alloys. Diamond-like carbon (DLC) is applied in surface modification technology due to its superior mechanical characteristics. In this study, in order to achieve effective surface modification to improve the wear resistance of the aluminum alloys, a new coatings-system was designed. This coating-substrate system is a multilayer coating-substrate system, which consists of nitriding pretreatment of the substrate, the intermed
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24

OKA, Yoshihiro, Yoshimi NISHIMURA, Kingo AZUMA, Etsuo FUJIWARA, and Mitsuyasu YATSUZUKA. "Preparation of thick DLC film by plasma-based ion implantation and deposition." Proceedings of the Materials and processing conference 2003.11 (2003): 381–82. http://dx.doi.org/10.1299/jsmemp.2003.11.381.

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25

Utsumi, Takayuki, Yoshihiro Oka, Tsuneo Suzuki, Weihua Jiang, and Mitsuyasu Yatsuzuka. "Properties of SiCx Film Prepared with Plasma-based Ion Implantation and Deposition." Transactions of the Materials Research Society of Japan 32, no. 4 (2007): 879–82. http://dx.doi.org/10.14723/tmrsj.32.879.

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26

Kolokoltsev, V. N., V. Ya Nikulin, P. V. Silin, et al. "Deposition of thin refractory-metal-films onto glasses through diaphragms at plasma focus facility." Fizika plazmy 50, no. 3 (2024): 306–14. http://dx.doi.org/10.31857/s0367292124030055.

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The results of experiments are presented on the deposition onto silicate glasses of thin refractorymetal- films: molybdenum, tantalum and tungsten. The technique used for manufacturing films was based on the deposition of metal-containing plasma formed when exposing the surface of foils made of refractory metals to high-power plasma and ion pulses. For generation of such pulses, the facility of plasma focus type was used, which makes it possible to obtain ion beams and plasma flows with the energy flux density in the range of 1010—1012 W/cm2. The most intense central part of the ion-plasma flo
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27

Lang, Wen Chang. "Coupled Magnetic Field Enhanced Arc Ion Plating: Process, Plasma and Deposited Film." Advanced Materials Research 399-401 (November 2011): 2018–25. http://dx.doi.org/10.4028/www.scientific.net/amr.399-401.2018.

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Based on the interaction mechanism of the plasma and the magnetic field, this paper has proposed the deposition process of coupled magnetic field to enhance the arc ion plating. Meanwhile, it has also analyzed the distribution, the polarity and the configuration of coupled magnetic field combining with the finite element simulation. The influence of coupled magnetic field on the distribution, the ionization rate, the surface quality of film and the deposition rate of arc ion plating has been also systematically discussed in this paper. What’s more, the reduction mechanism of coupled magnetic f
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28

Monteiro, Othon R., Zhi Wang, and Ian G. Brown. "Deposition of mullite and mullite-like coatings on silicon carbide by dual-source metal plasma immersion." Journal of Materials Research 12, no. 9 (1997): 2401–10. http://dx.doi.org/10.1557/jmr.1997.0318.

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Mullite and mullite-like coatings on silicon carbide have been produced by a metal plasma immersion ion implantation and deposition (Mepiiid) technique based on two cathodic vacuum arc sources and concurrent pulse biasing of the substrate in an oxygen atmosphere. The deposition was carried out at oxygen partial pressures of between 0.66 and 3.33 Pa. The Al : Si ratio in the films varied from 1 : 1 to 8 : 1 and was controlled by varying the pulse duration of the separate plasma guns. High bias voltage was used early in the deposition process in order to produce atomic mixing at the film-substra
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29

Hubička, Zdenek, Martin Zlámal, Jiri Olejníček, Drahoslav Tvarog, Martin Čada, and Josef Krýsa. "Semiconducting p-Type Copper Iron Oxide Thin Films Deposited by Hybrid Reactive-HiPIMS + ECWR and Reactive-HiPIMS Magnetron Plasma System." Coatings 10, no. 3 (2020): 232. http://dx.doi.org/10.3390/coatings10030232.

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A reactive high-power impulse magnetron sputtering (r-HiPIMS) and a reactive high-power impulse magnetron sputtering combined with electron cyclotron wave resonance plasma source (r-HiPIMS + ECWR) were used for the deposition of p-type CuFexOy thin films on glass with SnO2F conductive layer (FTO). The aim of this work was to deposit CuFexOy films with different atomic ratio of Cu and Fe atoms contained in the films by these two reactive sputtering methods and find deposition conditions that lead to growth of films with maximum amount of delafossite phase CuFeO2. Deposited copper iron oxide fil
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30

Andrejeva, Darja, Armands Leitans, Alexanders Urbahs, Konstantins Savkovs, and Margarita Urbaha. "Evaluation of the Friction Coefficient of Antifriction Coatings Based on Ti-Cu Obtained by the Ion-Plasma Deposition in Vacuum." Key Engineering Materials 799 (April 2019): 15–19. http://dx.doi.org/10.4028/www.scientific.net/kem.799.15.

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Ion-plasma antifriction coatings based on Ti-Cu were deposited by the method of ion-plasma sputtering in vacuum with the aim to gain a coating with a low coefficient of friction. To protect steel part from wear intermetallic, nitride and conglomerate coatings based on Ti-Cu with thickness of the coating h ≈ 2-5 μm obtained at different regimes of deposition. Thickness of the antifriction coatings and proportion of the chemical composition varied by deposition time, voltage and current of the magnetron, current of evaporators, pressure of gas in a vacuum chamber. This paper presents the results
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31

Ma, X. X., K. Yukimura, T. Ikehata, and Y. Miyagawa. "Ion current on the inner surface of a pipe by plasma-based ion implantation and deposition." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 206 (May 2003): 813–16. http://dx.doi.org/10.1016/s0168-583x(03)00855-3.

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32

Li, Yang, Zelong Zhou, and Yongyong He. "Solid Lubrication System and Its Plasma Surface Engineering: A Review." Lubricants 11, no. 11 (2023): 473. http://dx.doi.org/10.3390/lubricants11110473.

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In aerospace, aviation, nuclear power, and other high-tech fields, some essential moving parts must operate under high vacuum, high load, intense radiation, and other conditions. Under such extreme conditions, only solid lubricating materials can meet the lubrication requirements. Traditional material modification methods have problems such as high energy consumption, severe pollution, and narrow scope of application. Plasma modification technology can overcome these shortcomings. This paper focuses on several commonly used plasma preparation techniques for solid lubricating coatings, includin
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33

Wada, Tadahiro, Jun Nakanishi, Yasuhiro Miki, Makoto Asano, Koji Iwamoto, and Hiroyuki Hanyu. "Surface Modification of 6061 Aluminum Alloy Using Plasma-Based Ion Implantation and Deposition." Advanced Science Letters 19, no. 8 (2013): 2317–21. http://dx.doi.org/10.1166/asl.2013.4934.

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34

Pelletier, J., and A. Anders. "Plasma-based ion implantation and deposition: a review of physics, technology, and applications." IEEE Transactions on Plasma Science 33, no. 6 (2005): 1944–59. http://dx.doi.org/10.1109/tps.2005.860079.

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35

Heinrich, S., S. Schirmer, D. Hirsch, et al. "Comparison of ZrN and TiN formed by plasma based ion implantation & deposition." Surface and Coatings Technology 202, no. 11 (2008): 2310–13. http://dx.doi.org/10.1016/j.surfcoat.2007.08.057.

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36

Yukimura, Ken, and Tomoyuki Muraho. "A two-switch mode pulse modulator for plasma-based ion implantation and deposition." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 206 (May 2003): 791–93. http://dx.doi.org/10.1016/s0168-583x(03)00850-4.

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37

Yukimura, Ken, Hiroyuki Ono, Shuhei Akashi, and Xinxin Ma. "Parametric Study of Zirconium Oxide Films Using Plasma-Based Ion Implantation and Deposition." Plasma Processes and Polymers 3, no. 1 (2006): 12–16. http://dx.doi.org/10.1002/ppap.200500064.

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38

Mantese, Joseph V., Ian G. Brown, Nathan W. Cheung, and George A. Collins. "Plasma-Immersion Ion Implantation." MRS Bulletin 21, no. 8 (1996): 52–56. http://dx.doi.org/10.1557/s0883769400035727.

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Plasma-immersion ion implantation (PIII) is an emerging technology for the surface engineering of semiconductors, metals, and dielectrics. It is inherently a batch-processable technique that lends itself to the implantation of large numbers of parts simultaneously. It thus offers the possibility of introducing ion implantation into manufacturing processes that have not traditionally been feasible using conventional implantation.In PIII the part to be treated is placed in a vacuum chamber in which is generated a plasma containing the ions of the species to be implanted. The plasma based implant
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39

Dieulesaint, Alexandre, Odette Chaix-Pluchery, Matthieu Weber, et al. "Tunable Hydrogen-Related Defects in ZnO Nanowires Using Oxygen Plasma Treatment by Ion Energy Adjustment." Nanomaterials 14, no. 14 (2024): 1225. http://dx.doi.org/10.3390/nano14141225.

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The chemical bath deposition (CBD) process enables the deposition of ZnO nanowires (NWs) on various substrates with customizable morphology. However, the hydrogen-rich CBD environment introduces numerous hydrogen-related defects, unintentionally doping the ZnO NWs and increasing their electrical conductivity. The oxygen-based plasma treatment can modify the nature and amount of these defects, potentially tailoring the ZnO NW properties for specific applications. This study examines the impact of the average ion energy on the formation of oxygen vacancies (VO) and hydrogen-related defects in Zn
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40

Oka, Y., M. Kirinuki, T. Suzuki, M. Yatsuzuka, and K. Yatsui. "Effect of ion beam implantation on density of DLC prepared by plasma-based ion implantation and deposition." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 242, no. 1-2 (2006): 335–37. http://dx.doi.org/10.1016/j.nimb.2005.08.203.

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41

Oka, Y., M. Nishijima, K. Hiraga, and M. Yatsuzuka. "Effect of ion implantation layer on adhesion of DLC film by plasma-based ion implantation and deposition." Surface and Coatings Technology 201, no. 15 (2007): 6647–50. http://dx.doi.org/10.1016/j.surfcoat.2006.09.027.

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42

Sagalovich, Alex, and Vlad Sagalovych. "EXPERIMENTAL RESEARCH OF MULTICOMPONENT MULTILAYER ION-PLASMA AVINIT COATINGS." Фізична інженерія поверхні 11, no. 1 (2013): 4–17. https://doi.org/10.5281/zenodo.4457315.

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Metallographic examination of improved structures of Avinit С multilayer nitride-based coatings, particularly coatings of Ti-Al-N system and Mo-N system-based coating have been carried out. Use of effective methods of surface cleaning and three-level arc control system in the techniques under development for prevention of surface damaging, caused by micro arcs, allows to apply coatings of precision and high finish class surfaces up to 12 – 13 grade of finish without deterioration of surface finish class. The experimental findings confirm a possibility of low-temperature deposition of ver
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43

Kirinuki, M., Akifumi Tomita, M. Kusuda, Yoshihiro Oka, A. Murakami, and Mitsuyasu Yatsuzuka. "Enhancement of Adhesive Strength of DLC Film by Plasma-Based Ion Implantation." Materials Science Forum 502 (December 2005): 315–20. http://dx.doi.org/10.4028/www.scientific.net/msf.502.315.

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The thick diamond-like carbon (DLC) film of good-adhesion was prepared on a stainless steel (SUS304) substrate by a hybrid process of plasma-based ion implantation and deposition using hydrocarbon gases such as methane, acetylene, and toluene. In this process, a high repetition pulsed plasma was produced by RF pulse (13.56 MHz) with the duration of 50 µs and the repetition rate of 0.5 - 1 kHz. Besides, the plasma ions were implanted to the substrate by a negative pulsed voltage of -20 kV and the pulse duration of 5 µs. Ion implantation served to produce a graded interface of carbon component i
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44

He, Yuan, Ling Feng Dai, Shi Hui Wang, Ya Nan Sun, Wei Shi, and Dong Tao Ge. "Towards Enhanced Bioactivity: Calcium Ion-Doped Polypyrrole." Advanced Materials Research 941-944 (June 2014): 1168–73. http://dx.doi.org/10.4028/www.scientific.net/amr.941-944.1168.

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Based on the unique redox property of electrically conductive polymers, Ca2+ was incorporated into polypyrrole (PPy) film that previously doped with polyelectrolyte heparin. Then the apatite-forming ability of the Ca2+-doped PPy was examined by a biomimetic method using stimulated body fluid (SBF), which has ion concentration nearly equal to those of human blood plasma. It was found that the Ca2+-doped PPy successfully formed bonelike apatite deposition on its surface after soaking in SBF for only 3 days, whereas the similar apatite deposition was formed on Ca2+-free PPy after soaking in SBF f
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45

Semenenko, Mykola O., Mykhailo G. Dusheiko, Sergiy V. Mamykin, et al. "Effect of Plasma, RF, and RIE Treatments on Properties of Double-Sided High Voltage Solar Cells with Vertically Aligned p-n Junctions." International Journal of Photoenergy 2016 (2016): 1–8. http://dx.doi.org/10.1155/2016/1815205.

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Si-based solar cells with vertically aligned p-n junctions operating at high voltage were designed and fabricated. The plasma treatments and antireflection coating deposition on the working surfaces of both single- and multijunction cells were made using the special holders. It was shown that additional treatment of solar cells in argon plasma prior to hydrogen plasma treatment and deposition of diamond-like carbon antireflection films led to the improvement of the cell efficiency by up to 60%. Radio frequency waves support plasma generation and improve photoelectric conversion mainly due to r
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46

Veitzer, Seth A., and Daniel Main. "Advances in Particle-In-Cell Modeling of Low-Temperature Plasma Ion Sources." Journal of Physics: Conference Series 2743, no. 1 (2024): 012021. http://dx.doi.org/10.1088/1742-6596/2743/1/012021.

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Abstract Ion sources that use low-temperature plasma (LTP) discharges are used in a variety of applications, including ion implantation, mass spectrometry, and plasma processing. In recent years there has been a growing interest in using particle-in-cell (PIC) modeling to improve the performance and optimization of LTP-based ion sources. PIC modeling is a powerful tool for simulating the dynamics of plasmas because it accurately models the effects of self-consistent fields, charge deposition, plasma chemistry, magnetic confinement, and accurate sheath physics. However, PIC simulations can be c
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47

Vardanyan, E. L., V. V. Budilov, I. I. Yagafarov, and K. N. Ramazanov. "Producing of Tix-Aly Intermetallic Coatings on the Surface of Pre-Nitriding Punching Tools." Applied Mechanics and Materials 799-800 (October 2015): 418–22. http://dx.doi.org/10.4028/www.scientific.net/amm.799-800.418.

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The problem of punching tools resistance increasing is investigated. Methods for intermetallic coatings synthesis are investigated. Mathematical model of vacuum ion-plasma deposition process allowing predicting coatings composition basing on intermetallic system Ti-Al was developed. Experimental verification confirmed the adequacy of the computer model. The technology hardening punching tools with wear-resistant coatings deposition based on intermetallic Ti-Al system on pre-nitriding surface in vacuum was developed. Production tests of the hardened punching tools were carried out.
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48

Abe, S., C. H. Skinner, I. Bykov, et al. "Determination of the characteristic magnetic pre-sheath length at divertor surfaces using micro-engineered targets on DiMES at DIII-D." Nuclear Fusion 62, no. 6 (2022): 066001. http://dx.doi.org/10.1088/1741-4326/ac3cdb.

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Abstract The magnetic pre-sheath (MPS) length, L MPS, is a critical parameter to define the sheath potential, which controls the ion trajectory of low-Z species (D, T, He, and C), as well as the prompt re-deposition of high-Z species. To determine L MPS, we fabricated micro-trenches (30 × 30 × 4 μm) via focused ion beam milling on a silicon surface and exposed them to L-mode deuterium plasmas in DIII-D via the divertor material evaluation system (DiMES) removable sample exposure probe. The areal distribution of impurity depositions, mainly consisting of carbon, was measured by energy-dispersiv
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49

Chun, S. Y., and Sang Jin Lee. "Substrate Bias Effects on the Structure of the Film by a Hybrid PVD and Plasma-Based Ion Implantation Process." Materials Science Forum 486-487 (June 2005): 452–55. http://dx.doi.org/10.4028/www.scientific.net/msf.486-487.452.

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This paper descirbes the characteristics of gold films prepared by a hybrid plasma based an ion implantation/deposition (PBIID) system. The surface morphology and structure of the film were affected by the voltage applied to the target. With increasing negative voltage, the surface became thinner with a lesser number of nuclei. The grain structure varied from the continuous film at 0 kV to the channel at -1 kV, and further to the islands (mounds) at -5 kV. The ions in the sheath are believed to play an important role in the deposition of the film.
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50

Perálvarez, M., J. Barreto, Josep Carreras, et al. "Si-nanocrystal-based LEDs fabricated by ion implantation and plasma-enhanced chemical vapour deposition." Nanotechnology 20, no. 40 (2009): 405201. http://dx.doi.org/10.1088/0957-4484/20/40/405201.

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