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Relevant bibliographies by topics / Plasma Chemistry - SiH4

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Academic literature on the topic 'Plasma Chemistry - SiH4'

Author: Grafiati

Published: 7 September 2023

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Journal articles on the topic "Plasma Chemistry - SiH4"

1

Orlicki, Dariusz, Vladimir Hlavacek, and Hendrik J. Viljoen. "Modeling of a–Si:H deposition in a dc glow discharge reactor." Journal of Materials Research 7, no. 8 (1992): 2160–81. http://dx.doi.org/10.1557/jmr.1992.2160.

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PECVD reactors are increasingly used for the manufacturing of electronic components. This paper presents a reactor model for the deposition of amorphous hydrogenated silicon in a dc glow discharge of Ar–SiH4 The parallel-plate configuration is used in this study. Electron and positive ion densities have been calculated in a self-consistent way. A macroscopic description that is based on the Boltzmann equation with forwardscattering is used to calculate the ionization rate. The dissociation rate constant of SiH4 requires knowledge about the electron energy distribution function. Maxwell and Dru

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2

Schram, Daniel C. "Plasma processing and chemistry." Pure and Applied Chemistry 74, no. 3 (2002): 369–80. http://dx.doi.org/10.1351/pac200274030369.

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Plasma deposition and plasma conversion can be characterized by five steps: production by ionization, transfer of chemistry to precursors, transport of radicals to the surface, surface interactions with deposition, recirculation and generation of new monomers. For very fast deposition, large flows of radicals are needed and a regime is reached, in which monolayer coverage is reached in a very short time. Such large flows of radicals can be obtained by ion-induced interactions, as the C2H radical from acetylene for a-C:H deposition, or by H atom abstraction as the SiH3 radical from SiH4 for a-S

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3

Nakayama, Yoshikazu, Kazuo Wakimura, Seiki Takahashi, Hideki Kita, and Takao Kawamura. "Plasma deposition of aSi:H:F films from SiH2F2 and SiF4SiH4." Journal of Non-Crystalline Solids 77-78 (December 1985): 797–800. http://dx.doi.org/10.1016/0022-3093(85)90780-x.

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4

Park, Hwanyeol, and Ho Jun Kim. "Theoretical Analysis of Si2H6 Adsorption on Hydrogenated Silicon Surfaces for Fast Deposition Using Intermediate Pressure SiH4 Capacitively Coupled Plasma." Coatings 11, no. 9 (2021): 1041. http://dx.doi.org/10.3390/coatings11091041.

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The rapid and uniform growth of hydrogenated silicon (Si:H) films is essential for the manufacturing of future semiconductor devices; therefore, Si:H films are mainly deposited using SiH4-based plasmas. An increase in the pressure of the mixture gas has been demonstrated to increase the deposition rate in the SiH4-based plasmas. The fact that SiH4 more efficiently generates Si2H6 at higher gas pressures requires a theoretical investigation of the reactivity of Si2H6 on various surfaces. Therefore, we conducted first-principles density functional theory (DFT) calculations to understand the surf

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5

Kim, Ho Jun. "Importance of Dielectric Elements for Attaining Process Uniformity in Capacitively Coupled Plasma Deposition Reactors." Coatings 12, no. 4 (2022): 457. http://dx.doi.org/10.3390/coatings12040457.

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In this study, the effect of dielectric elements on plasma radial uniformity was analyzed for a 300 mm wafer process in a capacitively coupled plasma deposition reactor. Based on a two-dimensional self-consistent fluid model, numerical simulations were performed for SiH4/He discharges at 1200 Pa and at the radio frequency of 13.56 MHz. Although in current plasma processes the wafer is often coated with non-conducting films and placed on a ceramic substrate, related materials have not been analyzed. Therefore, the plasma characteristics were studied in depth by changing the wafer material from

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6

Milne, S. B., Y. Q. Fu, J. K. Luo, et al. "Stress and Crystallization of Plasma Enhanced Chemical Vapour Deposition Nanocrystalline Silicon Films." Journal of Nanoscience and Nanotechnology 8, no. 5 (2008): 2693–98. http://dx.doi.org/10.1166/jnn.2008.629.

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Nanocrystalline Si films were prepared with a RF-PECVD system using different SiH4/H2 ratios, plasma powers, substrate temperatures and annealing conditions. The film's intrinsic stress was characterized in relation to the crystallization fraction. Results show that an increasing H2 gas ratio, plasma power or substrate temperature can shift the growth mechanism across a transition point, past which nanocrystalline Si is dominant in the film structure. The film's intrinsic stress normally peaks during this transition region. Different mechanisms of stress formation and relaxation during film gr

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7

Yuuki, Akimasa, Takaaki Kawahara, Yasuji Matsui, and Kunihide Tachibana. "A Study of Film Precursors in SiH4 Plasma-Enhanced CVD." KAGAKU KOGAKU RONBUNSHU 17, no. 4 (1991): 758–67. http://dx.doi.org/10.1252/kakoronbunshu.17.758.

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8

Jo, Sanghyun, Suik Kang, Kyungjun Lee, and Ho Jun Kim. "Helium Metastable Distributions and Their Effect on the Uniformity of Hydrogenated Amorphous Silicon Depositions in He/SiH4 Capacitively Coupled Plasmas." Coatings 12, no. 9 (2022): 1342. http://dx.doi.org/10.3390/coatings12091342.

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This study investigates, numerically, the spatial distribution of metastable helium (He*) in He/SiH4 capacitively coupled plasma (CCP) for the purpose of optimizing plasma density distributions. As a first step, we presented the results of a two-dimensional fluid model of He discharges, followed by those of He/SiH4 discharges to deposit hydrogenated amorphous silicon films, to investigate which factor dominates the coating uniformity. We retained our CCPs in the 300 mm wafer reactor used by the semiconductor industry in the recent past. Selected parameters, such as a sidewall gap (radial dista

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9

Kim, Dong-Joo, and Kyo-Seon Kim. "Effect of pulse modulation on particle growth during SiH4 plasma process." Korean Journal of Chemical Engineering 25, no. 4 (2008): 939–46. http://dx.doi.org/10.1007/s11814-008-0153-8.

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10

Thang, Doan Ha, Hiroshi Muta, and Yoshinobu Kawai. "Investigation of plasma parameters in 915 MHz ECR plasma with SiH4/H2 mixtures." Thin Solid Films 516, no. 13 (2008): 4452–55. http://dx.doi.org/10.1016/j.tsf.2007.10.099.

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