Relevant bibliographies by topics / Plasma enhanced chemical vapor deposition (PECVD)

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Plasma enhanced chemical vapor deposition (PECVD)'

Author: Grafiati
Published: 4 June 2021
Last updated: 3 February 2022

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Journal articles on the topic "Plasma enhanced chemical vapor deposition (PECVD)"

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JangJian, Shiu-Ko, and Ying-Lang Wang. "Substrate Effect on Plasma Clean Efficiency in Plasma Enhanced Chemical Vapor Deposition System." Active and Passive Electronic Components 2007 (2007): 1–5. http://dx.doi.org/10.1155/2007/15754.

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The plasma clean in a plasma-enhanced chemical vapor deposition (PECVD) system plays an important role to ensure the same chamber condition after numerous film depositions. The periodic and applicable plasma clean in deposition chamber also increases wafer yield due to less defect produced during the deposition process. In this study, the plasma clean rate (PCR) of silicon oxide is investigated after the silicon nitride deposited on Cu and silicon oxide substrates by remote plasma system (RPS), respectively. The experimental results show that the PCR drastically decreases with Cu substrate compared to that with silicon oxide substrate after numerous silicon nitride depositions. To understand the substrate effect on PCR, the surface element analysis and bonding configuration are executed by X-ray photoelectron spectroscopy (XPS). The high resolution inductively coupled plasma mass spectrometer (HR-ICP-MS) is used to analyze microelement of metal ions on the surface of shower head in the PECVD chamber. According to Cu substrate, the results show that micro Cu ion and theCuOxbonding can be detected on the surface of shower head. The Cu ion contamination might grab the fluorine radicals produced byNF3ddissociation in the RPS and that induces the drastic decrease on PCR.
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Suhr, H., A. Etsp�ler, E. Feurer, and S. Kraus. "Alloys prepared by plasma-enhanced chemical vapor deposition (PECVD)." Plasma Chemistry and Plasma Processing 9, no. 2 (June 1989): 217–23. http://dx.doi.org/10.1007/bf01054282.

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Kyaw, Myat, Shinsuki Mori, Nathaniel Dugos, Susan Roces, Arnel Beltran, and Shunsuke Suzuki. "Plasma-Enhanced Chemical Vapor Deposition of Indene for Gas Separation Membrane." ASEAN Journal of Chemical Engineering 19, no. 1 (October 24, 2019): 47. http://dx.doi.org/10.22146/ajche.50874.

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Polyindene (PIn) membrane was fabricated onto a zeolite 5A substrate by using plasma-enhanced chemical vapor deposition (PECVD) at low temperature. Membrane characterization was done by taking Scanning Electron Microscopy (SEM) and FT-IR measurements and the new peak was found in the plasma-derived PIn film. Membrane performance was analyzed by checking permeability of pure gases (H2, N2, and CO2) through the membrane. PECVD-derived PIn membrane showed high gas barrier properties and selectivities of 8.2 and 4.0 for H2/CO2 and H2/N2, respectively, at room temperature
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Bell, Martin S., Kenneth B. K. Teo, Rodrigo G. Lacerda, W. I. Milne, David B. Hash, and M. Meyyappan. "Carbon nanotubes by plasma-enhanced chemical vapor deposition." Pure and Applied Chemistry 78, no. 6 (January 1, 2006): 1117–25. http://dx.doi.org/10.1351/pac200678061117.

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This paper presents the growth of vertically aligned carbon nanotubes by plasma-enhanced chemical vapor deposition (PECVD) using Ni catalyst and C2H2/NH3 feedstock. The role of plasma in aligning the carbon nanotubes during growth is investigated both experimentally and computationally, confirming that the field in the plasma sheath causes the nanotubes to be aligned. Experiments using a plasma analyzer show that C2H2 is the dominant precursor for carbon nanotube growth. The role of NH3 in the plasma chemistry is also investigated, and experimental results show how the interaction between NH3 and the C2H2 carbon feedstock in the gas phase explains the structural variation in deposited nanotubes for differing gas ratios. The effects of varying the plasma power during deposition on nanotube growth rate is also explored. Finally, the role of endothermic ion-molecule reactions in the plasma sheath is investigated by comparing measured data with simulation results.
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Ding, Er Xiong, Hong Zhang Geng, Li He Mao, Wen Yi Wang, Yan Wang, Zhi Jia Luo, Jing Wang, and Hai Jie Yang. "Recent Research Progress of Carbon Nanotube Arrays Prepared by Plasma Enhanced Chemical Vapor Deposition Method." Materials Science Forum 852 (April 2016): 308–14. http://dx.doi.org/10.4028/www.scientific.net/msf.852.308.

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Preparing carbon nanotube (CNT) arrays by plasma enhanced chemical vapor deposition (PECVD) method can dramatically reduce the deposition temperature, which makes it possible for in-situ fabrication of CNT-based nanoelectronic devices. In this paper, up to date research progress of CNT arrays prepared by PECVD method was presented, including radio frequency PECVD, direct current PECVD and microwave PECVD. Then, morphology and quality of CNT arrays were compared. In the end, we analyzed the possible challenges encountered through CNT array preparation by PECVD method at the moment and in the future.
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Bhushan, Bharat, Andrew J. Kellock, Nam-Hee Cho, and Joel W. Ager. "Characterization of chemical bonding and physical characteristics of diamond-like amorphous carbon and diamond films." Journal of Materials Research 7, no. 2 (February 1992): 404–10. http://dx.doi.org/10.1557/jmr.1992.0404.

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Diamond-like (amorphous) carbon (DLC) films were prepared by dc magnetron sputtering and plasma enhanced chemical vapor deposition (PECVD) and diamond films were prepared by microwave plasma enhanced chemical vapor deposition (MPECVD). For the first time, chemical and mechanical characterization of the films from each category are carried out systematically and a comparison of the chemical and physical properties is provided. We find that DLC coatings produced by PECVD are superior in microhardness and modulus of elasticity to those produced by sputtering. PECVD films contain a larger fraction of sp3-bonding than the sputtered hydrogenated carbon films. Chemical and physical properties of the diamond films appear to be close to those of bulk diamond.
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Esteve, Romain, Adolf Schöner, Sergey A. Reshanov, and Carl Mikael Zetterling. "Comparative Study of Thermal Oxides and Post-Oxidized Deposited Oxides on n-Type Free Standing 3C-SiC." Materials Science Forum 645-648 (April 2010): 829–32. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.829.

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The electrical properties of oxides fabricated on n-type 3C-SiC (001) using wet oxidation and an advanced oxidation process combining SiO2 deposition with rapid post oxidation steps have been compared. Two alternative SiO2 deposition techniques have been studied: the plasma enhanced chemical vapor deposition (PECVD) and the low pressure chemical vapor deposition (LPCVD). The post-oxidized PECVD oxide is been demonstrated to be beneficial in terms of interface traps density and reliability.
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Ghosh, Subrata, K. Ganesan, S. R. Polaki, S. Ilango, S. Amirthapandian, S. Dhara, M. Kamruddin, and A. K. Tyagi. "Flipping growth orientation of nanographitic structures by plasma enhanced chemical vapor deposition." RSC Advances 5, no. 111 (2015): 91922–31. http://dx.doi.org/10.1039/c5ra20820c.

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Nanographitic structures (NGSs) with a multitude of morphological features are grown on SiO2/Si substrates by electron cyclotron resonance-plasma enhanced chemical vapor deposition (ECR-PECVD).
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Nasonova, Anna, and Kyo-Seon Kim. "Multifunctional particle coating by plasma process and its application to pollution control." RSC Adv. 4, no. 56 (2014): 29866–76. http://dx.doi.org/10.1039/c4ra03896g.

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Barbadillo, L., M. J. Hernández, M. Cervera, and J. Piqueras. "Películas amorfas de SixCyN depositadas mediante ECR-PECVD." Boletín de la Sociedad Española de Cerámica y Vidrio 39, no. 4 (August 30, 2000): 453–57. http://dx.doi.org/10.3989/cyv.2000.v39.i4.797.

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Dissertations / Theses on the topic "Plasma enhanced chemical vapor deposition (PECVD)"

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QI, YU. "THE APPLICATION OF PULSE MODULATED PLASMA TO THE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION OF DIELECTRIC MATERIALS." University of Cincinnati / OhioLINK, 2005. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1115603610.

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Spooner, Marc. "The application and limitations of PECVD for silicon-based photonics /." View thesis entry in Australian Digital Program, 2005. http://thesis.anu.edu.au/public/adt-ANU20070315.043442/index.html.

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Xiao, Zhigang. "Synthesis of Functional Multilayer Coatings by Plasma Enhanced Chemical Vapor Deposition." Cincinnati, Ohio : University of Cincinnati, 2004. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=ucin1081456822.

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Haddad, Farah. "Transmission electron microscopy study of low-temperature silicon epitaxy by plasma enhanced chemical vapor deposition." Thesis, Université Paris-Saclay (ComUE), 2016. http://www.theses.fr/2016SACLX107/document.

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Cette thèse s’intéresse à la croissance épitaxiale à basse température (~200°C) des couches minces de silicium par dépôt chimique en phase vapeur assisté par plasma (PECVD), pour des applications aux cellules solaires. L’objectif de départ était de mieux comprendre cette croissance épitaxiale, en utilisant la microscopie électronique en transmission (MET) comme principal outil expérimental. D’abord, nous avons étudié les premiers stades de cette croissance épitaxiale en chimie SiF4/H2/Ar, en menant une série de dépôts courts – quelques dizaines jusqu’à quelques centaines de secondes – sur différents types de substrats. Nous avons établi une corrélation entre les images MET de coupes et de vues planes et les mesures d’ellipsométrie in-situ. Nous avons discuté les mécanismes de croissance en nous basant sur l’hypothèse de la croissance traditionnelle à base d’atomes, radicaux et ions et l’hypothèse (relativement nouvelle) reposant sur la fonte des nanoparticules générées par le plasma au moment de l’impact avec le substrat. De plus, pour comprendre comment l’épitaxie par PECVD à basse température se maintient, nous avons étudié comment elle se brise ou se perd. Pour cela, des expériences de perte d’épitaxie ont été visées en augmentant soit la puissance de la source RF, soit le flux d’hydrogène, toujours pour une chimie SiF4/H2/Ar. Dans les deux cas, le mécanisme de brisure d’épitaxie fait intervenir des macles et des fautes d’empilement qui interrompent la configuration épitaxiale ; ceci est accompagné par une rugosification de surface. Grâce à cette nouvelle compréhension de la brisure d’épitaxie, nous proposons quelques moyens pour maintenir l’épitaxie pour de plus grandes épaisseurs. En outre, nous avons observé une fascinante quasi-symétrie cinq dans les diagrammes de diffraction pour ces couches et aussi pour d’autres élaborées par un plasma de chimie SiH4/H2/HMDSO/B2H6/Ar. Nous avons attribué une telle symétrie à une brisure d’épitaxie par l’intermédiaire d’un maclage multiple. Nous avons développé une méthode d’analyse quantitative qui permet de discriminer les positions de maclage de celles du microcristal aléatoire dans les diagrammes de diffraction et d’estimer le nombre des opérations de maclage. Nous avons aussi discuté quelques raisons probables pour l’incidence du maclage et du maclage multiple sous forme de symétrie cinq. Finalement, une importante réalisation pour le monde de la MET, durant ce travail doctoral, a été l’optimisation de la préparation traditionnelle d’échantillon (polissage par tripode). Nous l’avons transformée d’une méthode longue et ennuyeuse en une méthode rapide qui devient compétitive par rapport à la technique du FIB relativement chère
This thesis focuses on low temperature (LT, ~200°C) epitaxial growth of silicon thin films by plasma enhanced chemical vapor deposition (PECVD) for solar cell applications. Our starting goal was to acquire a better understanding of epitaxial growth, by using transmission electron microscopy (TEM) as the main experimental tool. First, we investigated the initial stages of epitaxial growth using SiF4/H2/Ar chemistry by performing a series of short depositions – from few tens to few hundred of seconds – on different types of substrates. We made a correlation between cross-sectional and plan-view TEM images and in-situ ellipsometry measurements. We discussed the growth mechanisms under the hypotheses of the traditional growth mediated by atoms, radicals and ions and the relatively new approach based on the melting of plasma generated nanoparticles upon impact with the substrate. Additionally, in order to understand how epitaxy by LT-PECVD is sustained, we studied how it is lost or how it breaks down. For that, experiments of intentional breakdown of epitaxy were performed by either increasing the RF power or the hydrogen flow rate using the same SiF4/H2/Ar chemistry. In both cases, the breakdown mechanism was based on the development of twins and stacking faults thus disrupting epitaxial configuration; this was accommodated with surface roughening. Thanks to this new understanding of epitaxy breakdown, we can propose some ways to sustain epitaxy for higher thicknesses. Moreover, we fascinatingly observed a quasi-fivefold symmetry in the diffraction patterns for these layers and for layers deposited using SiH4/H2/HMDSO/B2H6/Ar plasma chemistry as well. We attributed such symmetry to the breakdown of epitaxy through multiple twinning. We developed a quantitative analysis method to discriminate twin positions from random microcrystalline ones in the diffraction patterns and to estimate the number of twin operations. We also discussed some probable reasons for the occurrence of twinning and multiple twinning in a fivefold symmetry fashion. Finally, one important achievement to the TEM world is the optimization, during this doctoral work, of the traditional TEM sample preparation (tripod polishing), transforming it from a long and boring method to a fast method that is competitive with the relatively expensive focus ion beam (FIB) technique
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Carbaugh, Daniel J. "Growth and Characterization of Silicon-Based Dielectrics using Plasma Enhanced Chemical Vapor Deposition." Ohio University / OhioLINK, 2014. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1406644891.

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Jehanathan, Neerushana. "Thermal stability of plasma enhanced chemical vapor deposited silicon nitride thin films." University of Western Australia. School of Mechanical Engineering, 2007. http://theses.library.uwa.edu.au/adt-WU2007.0069.

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[Truncated abstract] This study investigates the thermal stability of Plasma Enhanced Chemical Vapor Deposited (PECVD) silicon nitride thin films. Effects of heat-treatment in air on the chemical composition, atomic bonding structure, crystallinity, mechanical properties, morphological and physical integrity are investigated. The chemical composition, bonding structures and crystallinity are studied by means of X-ray Photoelectron Spectroscopy (XPS), Fourier Transform Infrared (FTIR) Spectroscopy and Transmission Electron Microscopy (TEM). The mechanical properties, such as hardness and Young’s modulus, are determined by means of nanoindentation. The morphological and physical integrity are analyzed using Scanning Electron Microscopy (SEM) . . . The Young’s modulus (E) and hardness (H) of the film deposited at 448 K were measured to have E=121±1.8 GPa and H=11.7±0.25 GPa. The film deposited at 573 K has E=150±3.6 GPa and H=14.7±0.6 GPa. For the film deposited at 573 K, the Young’s modulus is not affected by heating up to 1148 K. Heating at 1373 K caused significant increase in Young’s modulus to 180∼199 GPa. This is attributed to the crystallization of the film. For the film deposited at 448 K, the Young’s modulus showed a moderate increase, by ∼10%, after heating to above 673 K. This is consistent with the much lower level of crystallization in this film as compared to the film deposited at 573 K. In summary, low temperature deposited PECVD SiNx films are chemically and structurally unstable when heated in air to above 673 K. The main changes include oxidation to SiO2, crystallization of Si3N4 and physical cracking. The film deposited at 573 K is more stable and damage and oxidation resistant than the film deposited at 448 K.
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Zhou, Ming. "Novel photocatalytic TiO2-based porous membranes prepared by plasma-enhanced chemical vapor deposition (PECVD) for organic pollutant degradation in water." Thesis, Montpellier, 2015. http://www.theses.fr/2015MONTS090/document.

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Le dépôt chimique en phase vapeur assisté par plasma est appliqué pour préparer des couches minces amorphes de TiO2 à basse température. Un recuit à 300 °C pendant un temps minimum de 4,5 h permet de former la phase cristalline anatase. Les principales caractéristiques de ces couches minces comme leur structure cristalline, leur microstructure, leur largeur de bande interdite et leur hydrophilie de surface, sont déterminées. Leurs performances fonctionnelles comme photocatalyseurs sont d'abord examinées selon le test breveté par Pilkington, consistant à éliminer sous irradiation UV de l'acide stéarique préalablement adsorbé sur les couches de TiO2 ici déposées sur des plaquettes de silicium. Des membranes M100 (couche continue de TiO2) et M800 (couche de TiO2 couvrant les grains de support) sont préparées sur les couches de surface macroporeuses de supports poreux en alumine, de tailles moyennes de pores respectives, 100 nm et 800 nm. Ces membranes sont testées en condition "statique", avec la diffusion d'un soluté organique dilué dans l'eau. Pour le bleu de méthylène, on montre que la quantité de composé détruit par unité de surface de membrane et par unité de temps est égale à 2 × 10-8 mol m-2 s-1 pour la membrane M100 et 1 × 10-8 mol m-2 s- 1 pour la membrane M800. Ces membranes sont également testées dans des conditions "dynamiques", à savoir en procédé baromembranaire, avec deux configurations différentes (couche photocatalytique du côté de l'alimentation ou du côté du perméat) et trois composés organiques différents (bleu de méthylène, acide orange 7 et phénol). La modélisation du procédé (adsorption et réaction photocatalytique) est finalement réalisée à partir des données expérimentales disponibles
Plasma-enhanced chemical vapor deposition is applied to prepare amorphous TiO2 thin films at low temperature. Post-annealing at 300 °C for minimal staying time 4.5 h is required to form crystalline anatase phase. Characteristics of the TiO2 thin films including crystalline structure, microstructure, band gap and surface hydrophilicity, are determined. Functional performance of these anatase thin films as photocatalysts is first examined with patented Pilkington assessment by removing, under UV irradiation, stearic acid initially adsorbed on TiO2 layers here deposited on silicon wafers. Membranes M100 (TiO2 continuous layer) and M800 (TiO2-skin on support grain) are prepared on the macroporous top layer of porous alumina supports with an average pore size of 100 nm and 800 nm, respectively. These membranes are tested in “static” condition under the effect of diffusion of an organic solute in water. For Methylene Blue it is shown that the quantity of destroyed compound per unit of membrane surface area and per unit of time is equal to 2×10−8 mol m-2 s-1 for M100 and 1×10−8 mol m-2 s-1 for M800. These membranes are also tested in “dynamic” conditions, i.e. pressure-driven membrane processes, with two different configurations (photocatalytic layer on the feed side or on the permeate side) and three different organics (Methylene Blue, Acid Orange 7 and phenol). Process modelling (adsorption and photocatalysis reaction) is finally carried out from the available experimental outputs
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Niiranen, Pentti. "Electrically Modified Quartz Crystal Microbalance to Study Surface Chemistry Using Plasma Electrons as Reducing Agents." Thesis, Linköpings universitet, Kemi, 2021. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-176607.

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Metallic films are important in various applications, such as electric devices where it can act as contacts. In electrical devices, the substrate typically consists of silicon dioxide (SiO2) which is a temperature-sensitive substrate. Therefore, plasma enhanced chemical vapor deposition (PECVD) are better suited than thermally activated chemical vapor deposition (CVD). Depositing metallic films with PECVD demands co-reactants that act as reducing agents. However, these are not well-studied and do not always have the power enough to perform the reduction reaction for metals. Recently it has been concluded that electrons can act as reducing agents in the deposition of first row transition metallic films in a PECVD process. By supplying a positive bias to the substrate, the electrons got attracted to the surface of the substrate, which facilitated metal growth. The study concluded that metal growth only occurred at conductive -and semiconductive substrates and that the substrate bias and plasma power affected the metal growth. The process is however not well understood, which causes a knowledge gap, signifying that studies of the surface chemistry are needed. Here a new modified analytical method to study the surface chemistry in the newly developed process mentioned above is presented. The analytical method consists of an electrically modified quartz crystal microbalance (QCM) with gold electrodes as a conductive substrate. This allows the electron current to run through the QCM during the measurement. By supplying a DC-voltage to the front electrode it gets readily biased (negative and positive) and by placing a capacitor in the circuit, it connects the AC-circuit (oscillator circuit) and the DC-circuit (DC-voltage bias circuit). At the same time, it blocks the DC-current from going back to the oscillator but allows the high-frequency signal to pass from the QCM. The results in this thesis concluded that the QCM can be electrically modified to allow an electron flux to the QCM while using it as a substrate when electrons are used as reducing agents. Scanning electron microscopy (SEM) of a QCM crystal revealed that a 2 µm film had been deposited while SEM coupled with energy dispersive X-ray spectroscopy (EDS) showed that the film indeed contained iron. Further analysis was made by high-resolution X-ray photoelectron spectroscopy (HR-XPS) to find the elemental composition of the film, which revealed that the thin film contained 41 at.% iron. In addition, this study investigated if the QCM could be used to study CVD processes where electrons were used as reducing agents. The results indeed revealed that it is possible to study the surface chemistry where electrons are used as reducing agents with the electrically modified QCM to gain knowledge concerning film deposition. Initial results of the QCM showed that film growth could be studied when varying the plasma power between 5 W to 15 W and the QCM bias between -40 V to +40 V. The method generated easily accessible data concerning the process where electrons are used as reducing agents, which gained insight to the method that never has been disclosed before.
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Hellwig, Thomas. "Physical, electrochemical and mechanical characterisation of amorphous boron phosphide coatings prepared by plasma enhanced chemical vapour deposition (PECVD)." Thesis, University of the West of Scotland, 2010. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.545797.

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Whilst substantial empirical experimental investigation is available in the literature on amorphous Boron phosphide (BP) coatings, there is not much information about the scienti¯c properties exhibited by this material in var- ious applications such as in infra-red imaging systems. Also a great deal of the industrial application of amorphous BP coatings is in the area of infra- red imaging systems. This thesis is based on an attempt to understand the underpinning scienti¯c basis for the properties of amorphous Boron phos- phide coatings, using a range of surface, chemical, physical, electrochemical, computational (quantum mechanics) and mechanical characterisation tools. The results of this investigation has not only helped in unveiling the scien- ti¯c basis of some of the current empirically derived properties of amorphous BP coatings, used in the infra-red imaging industry, but has con¯rmed that amorphous BP is a potential coating for engineering substrates used in var- ious industries if the PECVD deposition process is optimised. This inves- tigation also establishes the link between the properties of amorphous BP coatings and the bonds in the different stoichiometric composition of the coatings.
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Zimmermann, Thomas. "High-rate growth of hydrogenated amorphous and microcrystalline silicon for thin-film silicon solar cells using dynamic very-high frequency plasma-enhanced chemical vapor deposition." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2014. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-131765.

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Thin-film silicon tandem solar cells based on a hydrogenated amorphous silicon (a-Si:H) top-cell and a hydrogenated microcrystalline silicon (μc-Si:H) bottom-cell are a promising photovoltaic technology as they use a combination of absorber materials that is ideally suited for the solar spectrum. Additionally, the involved materials are abundant and non-toxic which is important for the manufacturing and application on a large scale. One of the most important factors for the application of photovoltaic technologies is the cost per watt. There are several ways to reduce this figure: increasing the efficiency of the solar cells, reducing the material consumption and increasing the throughput of the manufacturing equipment. The use of very-high frequencies has been proven to be beneficial for the material quality at high deposition rates thus enabling a high throughput and high solar cell efficiencies. In the present work a scalable very-high frequency plasma-enhanced chemical vapor deposition (VHF-PECVD) technique for state-of-the-art solar cells is developed. Linear plasma sources are applied which facilitate the use of very-high frequencies on large areas without compromising on the homogeneity of the deposition process. The linear plasma sources require a dynamic deposition process with the substrate passing by the electrodes in order to achieve a homogeneous deposition on large areas. State-of-the-art static radio-frequency (RF) PECVD processes are used as a reference in order to assess the potential of a dynamic VHF-PECVD technique for the growth of high-quality a-Si:H and μc-Si:H absorber layers at high rates. In chapter 4 the influence of the deposition process of the μc-Si:H i-layer on the solar cell performance is studied for static deposition processes. It is shown that the correlation between the i-layer growth rate, its crystallinity and the solar cell performance is similar for VHF- and RF-PECVD processes despite the different electrode configurations, excitation frequencies and process regimes. It is found that solar cells incorporating i-layers grown statically using VHF-PECVD processes obtain a state-of-the-art efficiency close to 8 % for growth rates up to 1.4 nm/s compared to 0.53 nm/s for RF-PECVD processes. The influence of dynamic deposition processes on the performance of μc-Si:H solar cells is studied. It is found that μc-Si:H solar cells incorporating dynamically grown i-layers obtain an efficiency of 7.3 % at a deposition rate of 0.95 nm/s. There is a small negative influence of the dynamic deposition process on the solar cell efficiency compared to static deposition processes which is related to the changing growth conditions the substrate encounters during a dynamic i-layer deposition process. The changes in gas composition during a dynamic i-layer deposition process using the linear plasma sources are studied systematically using a static RF-PECVD regime and applying a time-dependent gas composition. The results show that the changes in the gas composition affect the solar cell performance if they exceed a critical level. In chapter 5 dynamic VHF-PECVD processes for a-Si:H are developed in order to investigate the influence of the i-layer growth rate, process parameters and deposition technique on the solar performance and light-induced degradation. The results in this work indicate that a-Si:H solar cells incorporating i-layers grown dynamically by VHF-PECVD using linear plasma sources perform as good and better as solar cells with i-layers grown statically by RF-PECVD at the same deposition rate. State-of-the-art stabilized a-Si:H solar cell efficiencies of 7.6 % are obtained at a growth rate of 0.35 nm/s using dynamic VHF-PECVD processes. It is found that the stabilized efficiency of the a-Si:H solar cells strongly decreases with the i-layer deposition rate. A simplified model is presented that is used to obtain an estimate for the deposition rate dependent efficiency of an a-Si:H/μc-Si:H tandem solar cell based on the photovoltaic parameters of the single-junction solar cells. The aim is to investigate the individual influences of the a-Si:H and μc-Si:H absorber layer deposition rates on the performance of the tandem solar cell. The results show that a high deposition rate of the μc-Si:H absorber layer has a much higher potential for reducing the total deposition time of the absorber layers compared to high deposition rates for the a-Si:H absorber layer. Additionally, it is found that high deposition rates for a-Si:H have a strong negative impact on the tandem solar cell performance while the tandem solar cell efficiency remains almost constant for higher μc-Si:H deposition rates. It is concluded that the deposition rate of the μc-Si:H absorber layer is key to reduce the total deposition time without compromising on the tandem solar cell performance. The developed VHF-PECVD technique using linear plasma sources is capable of meeting this criterion while promoting a path to scale the processes to large substrate areas.
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Books on the topic "Plasma enhanced chemical vapor deposition (PECVD)"

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Geiser, Juergen. Simulation of deposition processes with PECVD apparatus. Hauppauge, N.Y: Nova Science Publishers, 2011.

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Lamberton, R. W. A study of the microstructure and growth of ultra-thin film amorphous hydrogenated carbon (a-C:H) prepared by plasma enhanced chemical vapour deposition (PECVD). [s.l: The Author], 1998.

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Etemadi, Peyman. Plasma enhanced chemical vapor deposition of crystalline diamond films. Ottawa: National Library of Canada, 2002.

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Konuma, Mitsuharu. Plasma techniques for film deposition. Harrow, U.K: Alpha Science International, 2005.

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Luminous chemical vapor deposition and interface engineering. New York: Marcel Dekker, 2005.

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1950-, Konuma Mitsuharu, ed. Film deposition by plasma techniques. Berlin: Springer-Verlag, 1992.

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Michalski, Andrzej. Krystalizacja warstw wielofazowych z plazmy impulsowej. Warszawa: Wydawnictwa Politechniki Warszawskiej, 1987.

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Prani͡avichi͡us, L. Coating technology : ion beam deposition. Warwick, R.I: Satas & Associates, 1993.

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Jönsson, Martin. Investigations of plasma-enhanced CVD growth of carbon nanotubes and potential applications. Göteborg: Göteborg University, 2007.

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Outlaw, R. A. Growth of high-quality thin-film Ge single crystals by plasma-enhanced chemical vapor deposition. Washington: NASA, 1986.

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Book chapters on the topic "Plasma enhanced chemical vapor deposition (PECVD)"

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Droes, Stevenx R., Toivo T. Kodas, and Mark J. Hampden-Smith. "Plasma-Enhanced Chemical Vapor Deposition (PECVD)." In Carbide, Nitride and Boride Materials Synthesis and Processing, 579–603. Dordrecht: Springer Netherlands, 1997. http://dx.doi.org/10.1007/978-94-009-0071-4_23.

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Winter, Patrick M., Gregory M. Lanza, Samuel A. Wickline, Marc Madou, Chunlei Wang, Parag B. Deotare, Marko Loncar, et al. "Plasma-Enhanced Chemical Vapor Deposition (PECVD)." In Encyclopedia of Nanotechnology, 2126. Dordrecht: Springer Netherlands, 2012. http://dx.doi.org/10.1007/978-90-481-9751-4_100662.

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Tsu, D. V., S. S. Kim, and G. Lucovsky. "Deposition of SiO2 Thin Films by Remote Plasma Enhanced Chemical Vapor Deposition (Remote PECVD)." In The Physics and Chemistry of SiO2 and the Si-SiO2 Interface, 119–27. Boston, MA: Springer US, 1988. http://dx.doi.org/10.1007/978-1-4899-0774-5_13.

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Zhang, C. S., Z. G. Wang, M. J. Shi, W. B. Peng, H. W. Diao, X. B. Liao, G. L. Kong, and X. B. Zeng. "Zinc Phthalocyanine (ZNPC) Incorporated into Silicon Matrix Grown by Plasma Enhanced Chemical Vapor Deposition (PECVD)." In Proceedings of ISES World Congress 2007 (Vol. I – Vol. V), 1326–28. Berlin, Heidelberg: Springer Berlin Heidelberg, 2008. http://dx.doi.org/10.1007/978-3-540-75997-3_268.

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Pyun, Su-Il, and Young-Gi Yoon. "Hydrogen Transport through TiO2Film Prepared by Plasma Enhanced Chemical Vapour Deposition(PECVD) Method." In Hydrogen Effects in Materials, 261–70. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2013. http://dx.doi.org/10.1002/9781118803363.ch24.

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Lau, Kenneth K. S. "Plasma-Enhanced Chemical Vapor Deposition." In Medical Coatings and Deposition Technologies, 495–530. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2016. http://dx.doi.org/10.1002/9781119308713.ch14.

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d’Agostino, R., P. Favia, F. Fracassi, and R. Lamendola. "Plasma-Enhanced Chemical Vapor Deposition." In Eurocourses: Mechanical and Materials Science, 105–33. Dordrecht: Springer Netherlands, 1992. http://dx.doi.org/10.1007/978-94-017-0631-5_6.

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Milella, Antonella, and Fabio Palumbo. "Plasma-Enhanced Chemical Vapor Deposition." In Encyclopedia of Membranes, 1–3. Berlin, Heidelberg: Springer Berlin Heidelberg, 2014. http://dx.doi.org/10.1007/978-3-642-40872-4_1106-1.

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Roualdes, Stephanie. "Plasma-Enhanced Chemical Vapor Deposition (Plasma Polymerization)." In Encyclopedia of Membranes, 1–2. Berlin, Heidelberg: Springer Berlin Heidelberg, 2015. http://dx.doi.org/10.1007/978-3-642-40872-4_1226-4.

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Cale, T. S., G. B. Raupp, B. R. Rogers, F. R. Myers, and T. E. Zirkle. "Introduction to Plasma Enhanced Chemical Vapor Deposition." In Plasma Processing of Semiconductors, 89–108. Dordrecht: Springer Netherlands, 1997. http://dx.doi.org/10.1007/978-94-011-5884-8_5.

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Conference papers on the topic "Plasma enhanced chemical vapor deposition (PECVD)"

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Karaman, Mustafa, Mehmet Gursoy, Tuba Ucar, Emrah Demir, and Ezgi Yenice. "Initiated plasma enhanced chemical vapor deposition (i-PECVD) of poly(alkyl acrylates)." In 2015 IEEE International Conference on Plasma Sciences (ICOPS). IEEE, 2015. http://dx.doi.org/10.1109/plasma.2015.7179962.

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Kim, Sungwon S., and Timothy S. Fisher. "The Effects of Process Parameters on Carbon Nanotube Synthesis by Plasma Enhanced Chemical Vapor Deposition (PECVD)." In ASME 2005 International Mechanical Engineering Congress and Exposition. ASMEDC, 2005. http://dx.doi.org/10.1115/imece2005-81431.

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Plasma-enhanced chemical vapor deposition (PECVD) offers a variety of advantages in the synthesis of carbon nanotubes in that several critical synthesis parameters can be controlled independently. In the present study, the effects of reacting gas composition, catalyst film thickness and bias voltage are investigated. Carbon nanotube samples are grown in a microwave PECVD chamber on clean silicon substrates. Gas composition is varied from carbon-rich to carbon-lean by controlling the methane flow rate. The results indicate that gas-phase composition profoundly affects the synthesized material, which is shown to be randomly oriented nanotube mats for moderate-to-rich gas mixtures and non-tubular carbon for very lean mixtures. The non-tubular content is shown to contain disordered and graphitic bonding by Raman spectrometry. Vertically aligned nanostructures are obtained under the presence of bias voltage.
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Krzhizhanovskaya, V. V., M. A. Zatevakhin, A. A. Ignatiev, Yu E. Gorbachev, W. J. Goedheer, and P. M. A. Sloot. "A 3D Virtual Reactor for Simulation of Silicon-Based Film Production." In ASME/JSME 2004 Pressure Vessels and Piping Conference. ASMEDC, 2004. http://dx.doi.org/10.1115/pvp2004-3120.

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In this paper we introduce a Grid-based Virtual Reactor, a problem-solving environment that supports detailed numerical study of industrial thin film production in Plasma Enhanced Chemical Vapor Deposition (PECVD) reactors. We describe the physics and chemistry underpinning the deposition process, the numerical approach to simulate these processes on advanced computer architectures as well as the associated software environment supporting computational experiments. In the developed 3D model we took into account all relevant chemical kinetics, plasma physics and transport processes that occur in PECVD reactors. We built an efficient problem-solving environment for scientists studying PECVD processes and end-users working in chemical industry and validated the resulting Virtual Reactor against real experiments.
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Maschmann, Matthew R., Placidus B. Amama, and Timothy S. Fisher. "Effect of DC Bias on Microwave Plasma Enhanced Chemical Vapor Deposition Synthesis of Single-Walled Carbon Nanotubes." In ASME 2005 International Mechanical Engineering Congress and Exposition. ASMEDC, 2005. http://dx.doi.org/10.1115/imece2005-79007.

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The physical properties of carbon nanotubes (CNTs) make them outstanding candidates for introduction into technologies ranging from high resolution flat panel displays to nanoscale transistors. Integration of carbon nanotubes into devices, however, requires precise control over the manufacturing processes used during their synthesis. To meet the specific requirements of a given application, alignment, diameter, length and chirality of carbon nanotubes must be strictly addressed. This work demonstrates the controlled synthesis of single-walled carbon nanotubes (SWCNTs) with low amount of undesired carbonaceous species using plasma enhanced chemical vapor deposition (PECVD). This report elucidates the role of DC bias applied to the growth substrate during synthesis, including the field-enhanced alignment of SWCNTs, selectivity in the diameter distribution and selectivity of semiconducting versus metallic nanotubes. Carbon nanotubes are characterized using Raman spectroscopy and electron microscopy.
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Brozek, Tomasz, and James Heddleson. "Identification of Charging Effects in Plasma-Enhanced TEOS Deposition with Non-Contact Test Techniques." In ISTFA 1998. ASM International, 1998. http://dx.doi.org/10.31399/asm.cp.istfa1998p0213.

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Abstract Use of non-contact test techniques to characterize degradation of the Si-SiO2 system on the wafer surface exposed to a plasma environment have proven themselves to be sensitive and useful in investigation of plasma charging level and uniformity. The current paper describes application of the surface charge analyzer and surface photo-voltage tool to explore process-induced charging occurring during plasma enhanced chemical vapor deposition (PECVD) of TEOS oxide. The oxide charge, the interface state density, and dopant deactivation are studied on blanket oxidized wafers with respect to the effect of oxide deposition, power lift step, and subsequent annealing.
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Ferrieu, F., C. Chaton, D. Neira, C. Beitia, L. Proenca Mota, A. M. Papon, A. Tarnowka, et al. "Metrology and Optical Characterization of Plasma Enhanced Chemical Vapor Deposition, (PECVD), low temperature deposited Amorphous Carbon films." In CHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS: 2007 International Conference on Frontiers of Characterization and Metrology. AIP, 2007. http://dx.doi.org/10.1063/1.2799445.

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Xiao, Lihong, Eric Zhou, and Huanxi Liu. "Surface modification of hydrogenated amorphous carbon (a-C: H) films prepared by plasma enhanced chemical vapor deposition (PECVD)." In 2015 China Semiconductor Technology International Conference (CSTIC). IEEE, 2015. http://dx.doi.org/10.1109/cstic.2015.7153411.

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Wang, Chao, Xiaobao Geng, and Haixia Zhang. "Fabrication of SiC MEMS Pressure Sensor Based on Novel Vacuum-Sealed Method." In 2008 Second International Conference on Integration and Commercialization of Micro and Nanosystems. ASMEDC, 2008. http://dx.doi.org/10.1115/micronano2008-70136.

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Fabrication of SiC MEMS pressure sensor based on novel vacuum-sealed method is presented in this paper. The sensor was fabricated using surface micromachining. Due to its excellent mechanical properties and high chemical resistance, PECVD (Plasma Enhanced Chemical Vapor Deposition) SiC was chosen as structural material. Polyimide acts as sacrificial layer which solve stiction problem in process. STS PECVD system is utilized to realize releasing, deposition and vacuum sealing consecutively in the process chamber, by this method wafer cleaning step was avoided before releasing the sacrificial layer, therefore, stiction problem is prevented. This fabrication technology can achieve high yield and low cost.
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Peters, Dethard, and Joerg Mueller. "Integrated optical devices with silicon oxynitride prepared by plasma-enhanced chemical vapor deposition (PECVD) on Si and GaAs substrates." In Physical Concepts of Materials for Novel Optoelectronic Device Applications, edited by Manijeh Razeghi. SPIE, 1991. http://dx.doi.org/10.1117/12.24551.

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Schade, Christoph, Alex Phan, Kevin Joslin, Phuong Truong, and Frank Talke. "Dissolution Behavior of Silicon Nitride Thin Films in a Simulated Ocular Environment." In ASME 2020 29th Conference on Information Storage and Processing Systems. American Society of Mechanical Engineers, 2020. http://dx.doi.org/10.1115/isps2020-1946.

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Abstract The time dependent dissolution of silicon nitride is studied in a simulated eye environment (controlled saline solution) as a function of temperature and pressure. Silicon nitride films manufactured by plasma-enhanced chemical vapor deposition (PECVD) and low-pressure chemical vapor deposition (LPCVD), respectively, were tested. The results revealed that both film types showed evidence of dissolution i.e., the films dissolved in the saline solution over time. At 37°C, PECVD and LPCVD silicon nitride membranes dissolved at a rate of 1.3 nm/day and 0.3 nm/day, respectively. It was found that at 23°C, the dissolution rate of the PECVD samples reduced to just 0.2 nm/day. Dissolution was not observed in samples tested in deionized water at 37°C. Titanium oxide layers (TiO2) were tested as protective layers to stop the dissolution. The results are important for implantable MEMS devices where silicon nitride is used as a functional membrane or as a protective layer.
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Reports on the topic "Plasma enhanced chemical vapor deposition (PECVD)"

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Lucovsky, G., R. J. Nemanich, J. Bernholc, J. Whitten, C. Wang, B. Davidson, M. Williams, D. Lee, C. Bjorkman, and Z. Jing. Fundamental studies of defect generation in amorphous silicon alloys grown by remote plasma-enhanced chemical-vapor deposition (Remote PECVD). Annual subcontract report, 1 September 1990--31 August 1991. Office of Scientific and Technical Information (OSTI), January 1993. http://dx.doi.org/10.2172/10129188.

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Lucovsky, G., R. J. Nemanich, J. Bernholc, J. Whitten, C. Wang, B. Davidson, M. Williams, D. Lee, C. Bjorkman, and Z. Jing. Fundamental Studies of Defect Generation in Amorphous Silicon Alloys Grown by Remote Plasma-Enhanced Chemical Vapor Deposition (Remote PECVD), Annual Subcontract Report, 1 September 1990 - 31 August 1991. Office of Scientific and Technical Information (OSTI), January 1993. http://dx.doi.org/10.2172/6796766.

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Saravanan, Kolandaivelu. Plasma enhanced chemical vapor deposition of ZrO2 thin films. Office of Scientific and Technical Information (OSTI), December 1993. http://dx.doi.org/10.2172/10120497.

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Robbins, Joshua, and Michael Seman. Electrochromic Devices Deposited on Low-Temperature Plastics by Plasma-Enhanced Chemical Vapor Deposition. Office of Scientific and Technical Information (OSTI), September 2005. http://dx.doi.org/10.2172/850233.

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Markunas, R. J., and G. G. Fountain. Development of a Ge/GaAs HMT Technology Based on Plasma Enhanced Chemical Vapor Deposition. Fort Belvoir, VA: Defense Technical Information Center, January 1992. http://dx.doi.org/10.21236/ada246991.

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Lucovsky, G. Fundamental Studies of Defect Generation in Amorphous Silicon Alloys Grown by Remote Plasma-Enhanced Chemical-Vapor Deposition, Final Subcontract Report, 1 July 1989-31 December 1992. Office of Scientific and Technical Information (OSTI), August 1993. http://dx.doi.org/10.2172/10182486.

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