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Journal articles on the topic 'Plasma enhanced chemical vapor deposition (PECVD)'

Author: Grafiati

Published: 4 June 2021

Last updated: 3 February 2022

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1

JangJian, Shiu-Ko, and Ying-Lang Wang. "Substrate Effect on Plasma Clean Efficiency in Plasma Enhanced Chemical Vapor Deposition System." Active and Passive Electronic Components 2007 (2007): 1–5. http://dx.doi.org/10.1155/2007/15754.

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The plasma clean in a plasma-enhanced chemical vapor deposition (PECVD) system plays an important role to ensure the same chamber condition after numerous film depositions. The periodic and applicable plasma clean in deposition chamber also increases wafer yield due to less defect produced during the deposition process. In this study, the plasma clean rate (PCR) of silicon oxide is investigated after the silicon nitride deposited on Cu and silicon oxide substrates by remote plasma system (RPS), respectively. The experimental results show that the PCR drastically decreases with Cu substrate compared to that with silicon oxide substrate after numerous silicon nitride depositions. To understand the substrate effect on PCR, the surface element analysis and bonding configuration are executed by X-ray photoelectron spectroscopy (XPS). The high resolution inductively coupled plasma mass spectrometer (HR-ICP-MS) is used to analyze microelement of metal ions on the surface of shower head in the PECVD chamber. According to Cu substrate, the results show that micro Cu ion and theCuOxbonding can be detected on the surface of shower head. The Cu ion contamination might grab the fluorine radicals produced byNF3ddissociation in the RPS and that induces the drastic decrease on PCR.

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2

Suhr, H., A. Etsp�ler, E. Feurer, and S. Kraus. "Alloys prepared by plasma-enhanced chemical vapor deposition (PECVD)." Plasma Chemistry and Plasma Processing 9, no. 2 (June 1989): 217–23. http://dx.doi.org/10.1007/bf01054282.

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3

Kyaw, Myat, Shinsuki Mori, Nathaniel Dugos, Susan Roces, Arnel Beltran, and Shunsuke Suzuki. "Plasma-Enhanced Chemical Vapor Deposition of Indene for Gas Separation Membrane." ASEAN Journal of Chemical Engineering 19, no. 1 (October 24, 2019): 47. http://dx.doi.org/10.22146/ajche.50874.

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Polyindene (PIn) membrane was fabricated onto a zeolite 5A substrate by using plasma-enhanced chemical vapor deposition (PECVD) at low temperature. Membrane characterization was done by taking Scanning Electron Microscopy (SEM) and FT-IR measurements and the new peak was found in the plasma-derived PIn film. Membrane performance was analyzed by checking permeability of pure gases (H2, N2, and CO2) through the membrane. PECVD-derived PIn membrane showed high gas barrier properties and selectivities of 8.2 and 4.0 for H2/CO2 and H2/N2, respectively, at room temperature

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Bell, Martin S., Kenneth B. K. Teo, Rodrigo G. Lacerda, W. I. Milne, David B. Hash, and M. Meyyappan. "Carbon nanotubes by plasma-enhanced chemical vapor deposition." Pure and Applied Chemistry 78, no. 6 (January 1, 2006): 1117–25. http://dx.doi.org/10.1351/pac200678061117.

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This paper presents the growth of vertically aligned carbon nanotubes by plasma-enhanced chemical vapor deposition (PECVD) using Ni catalyst and C2H2/NH3 feedstock. The role of plasma in aligning the carbon nanotubes during growth is investigated both experimentally and computationally, confirming that the field in the plasma sheath causes the nanotubes to be aligned. Experiments using a plasma analyzer show that C2H2 is the dominant precursor for carbon nanotube growth. The role of NH3 in the plasma chemistry is also investigated, and experimental results show how the interaction between NH3 and the C2H2 carbon feedstock in the gas phase explains the structural variation in deposited nanotubes for differing gas ratios. The effects of varying the plasma power during deposition on nanotube growth rate is also explored. Finally, the role of endothermic ion-molecule reactions in the plasma sheath is investigated by comparing measured data with simulation results.

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Ding, Er Xiong, Hong Zhang Geng, Li He Mao, Wen Yi Wang, Yan Wang, Zhi Jia Luo, Jing Wang, and Hai Jie Yang. "Recent Research Progress of Carbon Nanotube Arrays Prepared by Plasma Enhanced Chemical Vapor Deposition Method." Materials Science Forum 852 (April 2016): 308–14. http://dx.doi.org/10.4028/www.scientific.net/msf.852.308.

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Preparing carbon nanotube (CNT) arrays by plasma enhanced chemical vapor deposition (PECVD) method can dramatically reduce the deposition temperature, which makes it possible for in-situ fabrication of CNT-based nanoelectronic devices. In this paper, up to date research progress of CNT arrays prepared by PECVD method was presented, including radio frequency PECVD, direct current PECVD and microwave PECVD. Then, morphology and quality of CNT arrays were compared. In the end, we analyzed the possible challenges encountered through CNT array preparation by PECVD method at the moment and in the future.

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6

Bhushan, Bharat, Andrew J. Kellock, Nam-Hee Cho, and Joel W. Ager. "Characterization of chemical bonding and physical characteristics of diamond-like amorphous carbon and diamond films." Journal of Materials Research 7, no. 2 (February 1992): 404–10. http://dx.doi.org/10.1557/jmr.1992.0404.

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Diamond-like (amorphous) carbon (DLC) films were prepared by dc magnetron sputtering and plasma enhanced chemical vapor deposition (PECVD) and diamond films were prepared by microwave plasma enhanced chemical vapor deposition (MPECVD). For the first time, chemical and mechanical characterization of the films from each category are carried out systematically and a comparison of the chemical and physical properties is provided. We find that DLC coatings produced by PECVD are superior in microhardness and modulus of elasticity to those produced by sputtering. PECVD films contain a larger fraction of sp3-bonding than the sputtered hydrogenated carbon films. Chemical and physical properties of the diamond films appear to be close to those of bulk diamond.

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7

Esteve, Romain, Adolf Schöner, Sergey A. Reshanov, and Carl Mikael Zetterling. "Comparative Study of Thermal Oxides and Post-Oxidized Deposited Oxides on n-Type Free Standing 3C-SiC." Materials Science Forum 645-648 (April 2010): 829–32. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.829.

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The electrical properties of oxides fabricated on n-type 3C-SiC (001) using wet oxidation and an advanced oxidation process combining SiO2 deposition with rapid post oxidation steps have been compared. Two alternative SiO2 deposition techniques have been studied: the plasma enhanced chemical vapor deposition (PECVD) and the low pressure chemical vapor deposition (LPCVD). The post-oxidized PECVD oxide is been demonstrated to be beneficial in terms of interface traps density and reliability.

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Ghosh, Subrata, K. Ganesan, S. R. Polaki, S. Ilango, S. Amirthapandian, S. Dhara, M. Kamruddin, and A. K. Tyagi. "Flipping growth orientation of nanographitic structures by plasma enhanced chemical vapor deposition." RSC Advances 5, no. 111 (2015): 91922–31. http://dx.doi.org/10.1039/c5ra20820c.

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Nanographitic structures (NGSs) with a multitude of morphological features are grown on SiO₂/Si substrates by electron cyclotron resonance-plasma enhanced chemical vapor deposition (ECR-PECVD).

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9

Nasonova, Anna, and Kyo-Seon Kim. "Multifunctional particle coating by plasma process and its application to pollution control." RSC Adv. 4, no. 56 (2014): 29866–76. http://dx.doi.org/10.1039/c4ra03896g.

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10

Barbadillo, L., M. J. Hernández, M. Cervera, and J. Piqueras. "Películas amorfas de SixCyN depositadas mediante ECR-PECVD." Boletín de la Sociedad Española de Cerámica y Vidrio 39, no. 4 (August 30, 2000): 453–57. http://dx.doi.org/10.3989/cyv.2000.v39.i4.797.

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11

Park, Kyoung Woo, Seunghee Lee, Hyunkoo Lee, Yong-Hwan Cho, Yong Cheon Park, Sung Gap Im, and Sang-Hee Ko Park. "High-performance thin H:SiON OLED encapsulation layer deposited by PECVD at low temperature." RSC Advances 9, no. 1 (2019): 58–64. http://dx.doi.org/10.1039/c8ra08449a.

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High-performance H:SiON single layer thin film encapsulation (TFE) was deposited by plasma enhanced chemical vapor deposition (PECVD) method. To control the characteristics of the SiON thin films, hydrogen gas was introduced during PECVD process.

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12

Song, Yumin, Jun-Kyo Jeong, Seung-Dong Yang, Deok-Min Park, Yun-mi Kang, and Ga-Won Lee. "Process effect analysis on nitride trap distribution in silicon-oxide-nitride-oxide-silicon flash memory based on charge retention model." Materials Express 11, no. 9 (September 1, 2021): 1615–18. http://dx.doi.org/10.1166/mex.2021.2067.

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This paper analyzes data retention characteristics to determine process effects on the trap energy distribution of silicon nitride in silicon-oxide-nitride-oxide-silicon (SONOS) flash memory devices. Nitride films were prepared by low-pressure chemical vapor deposition (LPCVD) and plasma-enhanced chemical vapor deposition (PECVD). PEVCD films embedded with silicon nanocrystals (Si-NCs) were also compared. The flat band voltage shift in the programmed device was measured at high temperatures to observe the thermal excitation of electrons from the nitride traps in retention mode. The trap energy distribution was extracted using the charge decay rates, and the experimental results showed that nitride fabricated by PECVD has a shallower trap than nitride fabricated by LPCVD. In nitride with Si-NCs, increased trap sites were observed in the range of 1.14 eV to 1.24 eV.

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Song, Jingwei, Xiying Ma, Wang Zui, Chen Wei, and Zhongpin Chen. "Fabrication of Si3N4Nanocrystals and Nanowires Using PECVD." Advances in Materials Science and Engineering 2010 (2010): 1–4. http://dx.doi.org/10.1155/2010/892792.

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Si3N4nanowires and nanocrystals were prepared on Si substrates with or without Fe catalyst using silane (SiH4) and nitrogen (N2) as reactive gases through plasma-enhanced chemical vapor deposition (PECVD) technology. With Fe catalyst,Si3N4nanowires were developed, indicating that Fe catalyst played a role forSi3N4molecules directionally depositing into strings. The density of the nanowires is closely related to the density of Fe catalyst. When the density of Fe ions on the substrate was decreased remarkably, a smooth superlongSi3N4nanowire with 12 μm in length was fabricated. Having analyzed the growth mechanism, a growth model forSi3N4nanowires was developed. The growth ofSi3N4nanocrystallines was attributed to be a vapor-solid (V-S) deposition process.

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Ganesan, K., Subrata Ghosh, Nanda Gopala Krishna, S. Ilango, M. Kamruddin, and A. K. Tyagi. "A comparative study on defect estimation using XPS and Raman spectroscopy in few layer nanographitic structures." Physical Chemistry Chemical Physics 18, no. 32 (2016): 22160–67. http://dx.doi.org/10.1039/c6cp02033j.

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Defects in planar and vertically oriented nanographitic structures (NGSs) synthesized by plasma enhanced chemical vapor deposition (PECVD) have been investigated using Raman and X-ray photoelectron spectroscopy.

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15

Nagasawa, Hiroki, Masakoto Kanezashi, Tomohisa Yoshioka, and Toshinori Tsuru. "Plasma-enhanced chemical vapor deposition of amorphous carbon molecular sieve membranes for gas separation." RSC Advances 6, no. 64 (2016): 59045–49. http://dx.doi.org/10.1039/c6ra09381g.

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Amorphous carbon membranes were successfully synthesized onto a SiO₂–ZrO₂/α-Al₂O₃ nanoporous substrate via plasma-enhanced chemical vapor deposition (PECVD) at room temperature.

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16

Lee, Jaesung, Anupama B. Kaul, and Philip X. L. Feng. "Carbon nanofiber high frequency nanomechanical resonators." Nanoscale 9, no. 33 (2017): 11864–70. http://dx.doi.org/10.1039/c7nr02306e.

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Carbon nanofibers (CNFs) synthesized using a plasma-enhanced chemical vapor deposition (PECVD) process are investigated as a new class of building blocks for high-frequency vibrating nanomechanical resonators.

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17

Franz, Gerhard. "Plasma Enhanced Chemical Vapor Deposition of Organic Polymers." Processes 9, no. 6 (June 1, 2021): 980. http://dx.doi.org/10.3390/pr9060980.

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Chemical Vapor Deposition (CVD) with its plasma-enhanced variation (PECVD) is a mighty instrument in the toolbox of surface refinement to cover it with a layer with very even thickness. Remarkable the lateral and vertical conformity which is second to none. Originating from the evaporation of elements, this was soon applied to deposit compound layers by simultaneous evaporation of two or three elemental sources and today, CVD is rather applied for vaporous reactants, whereas the evaporation of solid sources has almost completely shifted to epitaxial processes with even lower deposition rates but growth which is adapted to the crystalline substrate. CVD means first breaking of chemical bonds which is followed by an atomic reorientation. As result, a new compound has been generated. Breaking of bonds requires energy, i.e., heat. Therefore, it was a giant step forward to use plasmas for this rate-limiting step. In most cases, the maximum temperature could be significantly reduced, and eventually, also organic compounds moved into the preparative focus. Even molecules with saturated bonds (CH4) were subjected to plasmas—and the result was diamond! In this article, some of these strategies are portrayed. One issue is the variety of reaction paths which can happen in a low-pressure plasma. It can act as a source for deposition and etching which turn out to be two sides of the same medal. Therefore, the view is directed to the reasons for this behavior. The advantages and disadvantages of three of the widest-spread types, namely microwave-driven plasmas and the two types of radio frequency-driven plasmas denoted Capacitively-Coupled Plasmas (CCPs) and Inductively-Coupled Plasmas (ICPs) are described. The view is also directed towards the surface analytics of the deposited layers—a very delicate issue because carbon is the most prominent atom to form multiple bonds and branched polymers which causes multifold reaction paths in almost all cases. Purification of a mixture of volatile compounds is not at all an easy task, but it is impossible for solids. Therefore, the characterization of the film properties is often more orientated towards typical surface properties, e.g., hydrophobicity, or dielectric strength instead of chemical parameters, e.g., certain spectra which characterize the purity (infrared or Raman). Besides diamond and Carbon Nano Tubes, CNTs, one of the polymers which exhibit an almost threadlike character is poly-pxylylene, commercially denoted parylene, which has turned out a film with outstanding properties when compared to other synthetics. Therefore, CVD deposition of parylene is making inroads in several technical fields. Even applications demanding tight requirements on coating quality, like gate dielectrics for semiconductor industry and semi-permeable layers for drug eluting implants in medical science, are coming within its purview. Plasma-enhancement of chemical vapor deposition has opened the window for coatings with remarkable surface qualities. In the case of diamond and CNTs, their purity can be proven by spectroscopic methods. In all the other cases, quantitative measurements of other parameters of bulk or surface parameters, resp., are more appropriate to describe and to evaluate the quality of the coatings.

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18

Lu, Li Xin, Gui Qin Li, Guo Jun Jin, and Yi Sun. "Multi-Physics Simulation of Amorphous Silicon Thin-Film Deposition in Plasma Enhanced Chemical Vapor Reactors." Advanced Materials Research 337 (September 2011): 266–69. http://dx.doi.org/10.4028/www.scientific.net/amr.337.266.

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Two-dimensional simulation in Plasma Enhanced Chemical Vapor Deposition (PECVD) is conducted by using multi-physics analysis method. Simulation results show the growth process of amorphous silicon thin film in the PECVD reactor. The effect of process parameters (such as power supply power, electrode spacing, etc.) on the deposition rate and electric field strength is obtained, and the optimum conditions needed for growth of amorphous silicon thin film is achieved as well. It was experimentally proved that the simulation results are consistent with the experimental results, and provide a theoretical basis for adjusting and optimizing the film preparation process.

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19

Lu, Mengmeng, Dan Shao, Ping Wang, Danying Chen, Yidi Zhang, Mingqiang Li, Jinghui Zhao, and Yanmin Zhou. "Enhanced osteoblast adhesion on amino-functionalized titanium surfaces through combined plasma enhanced chemical vapor deposition (PECVD) method." RSC Advances 6, no. 86 (2016): 82688–97. http://dx.doi.org/10.1039/c6ra08922d.

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Jašek, Ondřej, Petr Synek, Lenka Zajíčková, Marek Eliáš, and Vít Kudrle. "Synthesis of Carbon Nanostructures by Plasma Enhanced Chemical Vapour Deposition at Atmospheric Pressure." Journal of Electrical Engineering 61, no. 5 (September 1, 2010): 311–13. http://dx.doi.org/10.2478/v10187-011-0049-9.

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Synthesis of Carbon Nanostructures by Plasma Enhanced Chemical Vapour Deposition at Atmospheric PressureCarbon nanostructures present the leading field in nanotechnology research. A wide range of chemical and physical methods was used for carbon nanostructures synthesis including arc discharges, laser ablation and chemical vapour deposition. Plasma enhanced chemical vapour deposition (PECVD) with its application in modern microelectronics industry became soon target of research in carbon nanostructures synthesis. Selection of the ideal growth process depends on the application. Most of PECVD techniques work at low pressure requiring vacuum systems. However for industrial applications it would be desirable to work at atmospheric pressure. In this article carbon nanostructures synthesis by plasma discharges working at atmospheric pressure will be reviewed.

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Zhang, Zhi Qiu, Wen Fang Yang, Zhen Ya Gu, and Rui Ting Huo. "PVDF Films with Superhydrophobic Surface Fabricated by Plasma-Enhanced Chemical Vapor Deposition." Advanced Materials Research 79-82 (August 2009): 1451–54. http://dx.doi.org/10.4028/www.scientific.net/amr.79-82.1451.

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Lotus effect is well-known to be governed by chemical properties and nanotextures of the surfaces. In this paper, a method with two-steps treatment technology was applied to develop the superhydrophobic polyvinylidene fruoride(PVDF) membrane with the property of anti-contamination and self-cleaning. First, the PVDF membrane was treated by oxygen plasma so as to get the reactive groups. Second, this film was deposited by perfluoroalkylethyl acrylate precursor/Ar gas via plasma-enhanced chemical vapor deposition (PECVD). The modified film surface exhibited ultra water-repellent ability, showing that the water contact angles was larger than 150 °and the dynamic contact angles was usually lower than 5°.

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Zarchi, Meysam, Sharokh Ahangarani, and Maryam Zare Sanjari. "The role of PECVD hard coatings on the performance of industrial tools." Metallurgical and Materials Engineering 20, no. 1 (March 31, 2014): 15–22. http://dx.doi.org/10.5937/metmateng1401015z.

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The advantages of the application of hard coatings, which are well knownfor cutting tools, are to a much lesser extent explored for casting, extrusion, molding and forming tools. Increasing the lifetime of these tools is an important task in surface engineering because of complex loading conditionsand often complicated tool geometry. The plasma-enhanced chemical vapor deposition (PECVD) technique is well suited to deposit hard coatings onto large dies and moulds. The aim of this study was to discuss deposition processes suitable for coating of the often large three-dimensional molds and dies used in metal forming. Furthermore, results obtained using different hard coatings in industrial applications for several case studies like aluminum pressure die-casting; plastics injection molding and sheet metal forming are presented and discussed. For best coating performance, a careful optimization of both substrate pretreatment and coating deposition is necessary. The plasma-enhanced chemical vapor deposition (PECVD) technique shows advantages for these applications because of the high flexibility in pre-treatment using chemical etching and plasma-nitriding, because of its ability to coat large complexly shaped tools and because of the possibility of deposition of low-chlorine containing low-friction coatings.

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Peng, Yinshan, Xianliang Zheng, Hongwei Tian, Xiaoqiang Cui, Hong Chen, and Weitao Zheng. "Ultrathin Carbon Film Protected Silver Nanostructures for Surface-Enhanced Raman Scattering." Applied Spectroscopy 70, no. 10 (July 20, 2016): 1751–58. http://dx.doi.org/10.1177/0003702816644608.

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In this paper, ultrathin carbon film protected silver substrate (Ag/C) was prepared via a plasma-enhanced chemical vapor deposition (PECVD) method. The morphological evolution of silver nanostructures underneath, as well as the surface-enhanced Raman scattering (SERS) activity of Ag/C hybrid can be tuned by controlling the deposition time. The stability and reproducibility of the as-prepared hybrid were also studied.

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Dou, Wei, and Yuanyuan Tan. "Dual-gate low-voltage transparent electric-double-layer thin-film transistors with a top gate for threshold voltage modulation." RSC Advances 10, no. 14 (2020): 8093–96. http://dx.doi.org/10.1039/c9ra10619g.

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Dual gate (DG) low-voltage transparent electric-double-layer (EDL) thin-film transistors (TFTs) with microporous-SiO₂ for both top and bottom dielectrics have been fabricated, both dielectrics were deposited by plasma-enhanced chemical vapor deposition (PECVD).

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Li, Chen, Min Li, and Du Yao Zhang. "Preparation and Hydrophobic Processing of Aluminum-Doped Zinc Oxide Films." Applied Mechanics and Materials 39 (November 2010): 44–49. http://dx.doi.org/10.4028/www.scientific.net/amm.39.44.

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In this research, transparent and conductive aluminum-doped zinc oxide (AZO) films were prepared on glass substrates by metal-organic chemical vapor deposition (MOCVD). A nanostructured hydrophobic layer of fluorocarbon (FC) compounds was formed on the films by low-temperature dielectric barrier discharge plasma enhanced chemical vapor deposition (DBD-PECVD), as hydrophobic processing. Scanning electron microscopy (SEM) and contact angle analyzer were used to characterize and analyze the surface morphology, structure and hydrophobicity of these samples. The results indicate that the hydrophobicity of transparent conductive AZO films was enhanced by the deposition of the FC film.

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Liu, Na, Jeonghun Kim, Jeonghyeon Oh, Quang Trung Nguyen, Bibhuti Bhusan Sahu, Jeong Geon Han, and Sunkook Kim. "Growth of Multiorientated Polycrystalline MoS2 Using Plasma-Enhanced Chemical Vapor Deposition for Efficient Hydrogen Evolution Reactions." Nanomaterials 10, no. 8 (July 27, 2020): 1465. http://dx.doi.org/10.3390/nano10081465.

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Molybdenum disulfide (MoS2) has attracted considerable attention as a promising electrocatalyst for the hydrogen evolution reaction (HER). However, the catalytic HER performance of MoS2 is significantly limited by the few active sites and low electrical conductivity. In this study, the growth of multiorientated polycrystalline MoS2 using plasma-enhanced chemical vapor deposition (PECVD) for the HER is achieved. The MoS2 is synthesized by sulfurizing a sputtered pillar-shaped Mo film. The relatively low growth temperature during the PECVD process results in multiorientated MoS2 with an expanded interlayer spacing of ~0.75 nm, which provides abundant active sites, a reduced Gibbs free energy of H adsorption, and enhanced intralayer conductivity. In HER applications, the PECVD-grown MoS2 exhibits an overpotential value of 0.45 V, a Tafel slope of 76 mV dec−1, and excellent stability in strong acidic media for 10 h. The high HER performance achieved in this study indicates that two-dimensional MoS2 has potential as an electrocatalyst for next-generation energy technologies.

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Cheng, Jifang, Catherine Jimenez, Jacob P. Bell, Ingrid E. Anderson, Chito Kendrick, Yongan Yang, Reuben T. Collins, and S. Kim R. Williams. "Passivation, Separation and Characterization of Plasma Synthesized Silicon Nanoparticles." MRS Proceedings 1493 (2013): 117–19. http://dx.doi.org/10.1557/opl.2013.404.

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ABSTRACTSilicon nanoparticles (Si NPs) were synthesized by plasma enhanced chemical vapor deposition (PECVD) using silane as a silicon source. Allylamine was used as passivation ligands to form water-soluble Si NPs. Finally, aqueous asymmetric flow field-flow fractionation was used to successfully separate the polydisperse Si NPs into monodisperse Si NP fractions.

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CHAKROUN, A., A. JAOUAD, A. GIGUÈRE, V. AIMEZ, and R. ARÈS. "EFFECTIVE GaN SURFACE PASSIVATION BY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION OF SILICON OXIDE." International Journal of Nanoscience 11, no. 04 (August 2012): 1240023. http://dx.doi.org/10.1142/s0219581x12400236.

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We report on an effective and stable process for GaN surface passivation by plasma enhanced chemical vapor deposition (PECVD) of silicon oxide (SiOx). Metal–oxide–semiconductor (MOS) capacitors were fabricated on unintentionally doped n- GaN layers grown by OMVPE on sapphire substrates and characterized using capacitance–voltage (C–V) and current–voltage (I–V) measurements. A high level of surface potential modulation, a small voltage shift, a small hysteresis, and no evident frequency dispersion are observed on C–V characteristics, indicating a high SiOx/GaN interface quality with a low electronic surface state density.

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Noriah, Yusoff, Nor Hayati Saad, Mohsen Nabipoor, Suraya Sulaiman, and Daniel Bien Chia Sheng. "Plasma Enhanced Chemical Vapor Deposition Time Effect on Multi-Wall Carbon Nanotube Growth Using C₂H₂ and H₂ as Precursors." Advanced Materials Research 938 (June 2014): 58–62. http://dx.doi.org/10.4028/www.scientific.net/amr.938.58.

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Multi-wall carbon nanotube (MWCNT) structures were grown on cobalt catalyst layer through Plasma Enhanced Chemical Vapor Deposition (PECVD) process. Acetylene (C2H2) and hydrogen (H2) are used as precursors during the PECVD process. The morphology structures of the MWCNTs grown under different PECVD time were investigated and characterized using Scanning Electron Microscope (SEM). The effect of the PECVD time on the MWCNT growth is studied by varying the PECVD time at 45 sec and 600 sec. The morphology structures suggest that the growth rate is proportional to the PECVD time under the similar setting condition of pressure, acetylene flow-rate and temperature.

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Nakamura, Masatoshi, Toru Aoki, Yoshinori Hatanaka, Dariusz Korzec, and Jurgen Engemann. "Comparison of hydrophilic properties of amorphous TiOx films obtained by radio frequency sputtering and plasma-enhanced chemical vapor deposition." Journal of Materials Research 16, no. 2 (February 2001): 621–26. http://dx.doi.org/10.1557/jmr.2001.0089.

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The hydrophilic properties of amorphous TiOx films prepared by different methods, e.g., radio frequency (rf) sputtering and plasma-enhanced chemical vapor deposition (PECVD), were studied. It was found that the hydrophilicity strongly depends on the film structure. The best hydrophilicity was realized with the PECVD amorphous film having distorted Ti–O bonds due to a large amount of OH groups. These characteristics of the PECVD amorphous film suggest that such a low-density film including distorted Ti–O bonds could increase the photoenhancement efficiency by ultraviolet radiation. This reason is also supported from the results that a low-density rf sputtered film presented a higher hydrophilicity compared to a high-density radio frequency sputtered film. Furthermore, both electrical and chemical effects of OH groups will also contribute to the good hydrophilicity of the PECVD film.

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Roh, Sanghyun, Sungmin Kim, and Jooyoun Kim. "Facile Functionalization via Plasma-Enhanced Chemical Vapor Deposition for the Effective Filtration of Oily Aerosol." Polymers 11, no. 9 (September 12, 2019): 1490. http://dx.doi.org/10.3390/polym11091490.

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With the growing concern about the health impacts associated with airborne particles, there is a pressing need to design an effective filter device. The objective of this study is to investigate the effect of plasma-based surface modifications on static charges of electrospun filter media and their resulting filtration performance. Polystyrene (PS) electrospun web (ES) had inherent static charges of ~3.7 kV due to its electric field-driven process, displaying effective filtration performance. When oxygen species were created on the surface by the oxygen plasma process, static charges of electret media decreased, deteriorating the filter performance. When the web surface was fluorinated by the plasma-enhanced chemical vapor deposition (PECVD), the filtration efficiency against oily aerosol significantly increased due to the combined effect of decreased wettability and strong static charges (~−3.9 kV). Solid particles on the charged media formed dendrites as particles were attracted to other layers of particles, building up a pressure drop. The PECVD process is suggested as a facile functionalization method for effective filter design, particularly for capturing oily aerosol.

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Zimmermann, T., A. J. Flikweert, T. Merdzhanova, J. Woerdenweber, A. Gordijn, K. Dybek, F. Stahr, and J. W. Bartha. "High-Rate Deposition of Intrinsic a-Si:H and μc-Si:H Layers for Thin‑Film Silicon Solar Cells using a Dynamic Deposition Process." MRS Proceedings 1426 (2012): 27–32. http://dx.doi.org/10.1557/opl.2012.833.

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ABSTRACTThin‑film silicon solar cells based on hydrogenated amorphous silicon (a‑Si:H) and hydrogenated microcrystalline silicon (μc‑Si:H) absorber layers are typically deposited using static plasma-enhanced chemical vapor deposition (PECVD) processes. It has been found that the use of very‑high frequencies (VHF) is beneficial for the material quality at high deposition rates when compared to radio-frequency (RF) processes. In the present work a dynamic VHF‑PECVD technique using linear plasma sources is developed. The linear plasma sources facilitate the use of very-high excitation frequencies on large electrode areas without compromising on the homogeneity of the deposition process. It is shown that state-of-the-art a‑Si:H and μc‑Si:H single-junction solar cells can be deposited incorporating intrinsic layers grown dynamically by VHF-PECVD at 0.35 nm/s and 0.95 nm/s, respectively.

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Wang, Ning, Jing Wang, Fu Wei Zheng, Yu Min Wu, and Bao Rong Hou. "A Comparison of Diamond-Like Carbon Films Properties Obtained by Plasma Enhanced Chemical Vapor Deposition and Electro-Deposition." Materials Science Forum 852 (April 2016): 1029–33. http://dx.doi.org/10.4028/www.scientific.net/msf.852.1029.

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This paper compares the microstructure and electrochemical properties of the diamond-like carbon films obtained by two different deposition methods - microwave electron cyclotron resonance plasma enhanced chemical vapor deposition (MWECR-PECVD) techniques and electro-deposition – chosen for their low cost and capacity to produce films. The microstructure of the DLC films are investigated by Raman spectroscopy, FTIR spectroscopy, and electrochemical behavior is investigated by potentiodynamic and electrochemical impedance spectroscopy (EIS). Raman spectroscopy indicates that all the films deposited by different techniques show amorphous structure and typical characteristic of DLC film. FTIR spectrum results indicate that these DLC films are a-C:H films. As a result of EIS, the DLC films made by different methods showed obviously different electrochemical characters. The obtained results show that the DLC films deposited using the PECVD methods provided the better results, presenting a high corrosion resistance , high adherence to substrate, and a denser and more uniform surface.

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Fraga, Mariana A. "Comparison between the Piezoresistive Properties of a-SiC Films Obtained by PECVD and Magnetron Sputtering." Materials Science Forum 679-680 (March 2011): 217–20. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.217.

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This work compares the piezoresistive properties of SiC thin films produced by two techniques enhanced by plasma, PECVD (plasma enhanced chemical vapor deposition) and RF magnetron sputtering. In order to study these properties, strain gauges based on SiC films produced were fabricated using photolithography techniques in conjunction with lift-off processes. The beam-bending method was used to characterize the SiC strain gauges fabricated.

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Chen, Lan Li, Sheng Zhao Wang, Ying Peng Yin, and Ming Ji Shi. "Influence of Deposition Temperature on Microcrystalline Silicon Thin Film Prepared by Plasma Enhanced Chemical Vapor Deposition." Solid State Phenomena 181-182 (November 2011): 401–4. http://dx.doi.org/10.4028/www.scientific.net/ssp.181-182.401.

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The influence of deposition temperature (Ts) on glass/stainless steel-based intrinsic amorphous/microcrystalline silicon thin film prepared at different temperature was investigated by PECVD technology. The crystallization ratio and grain size of the silicon thin film at different deposition temperature is studied. The results reveal that the crystallization ratio and grain size of silicon thin film changed along with Ts. The crystallization ratio and grain size of the silicon thin film become larger when Ts=400 °C. On this work, optimal μc-Si:H can be obtained at 400°C deposition temperature in the suitable experimental conditions.

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Gholampour, Mahdi, Amir Abdollah-Zadeh, Reza Poursalehi, and Leila Shekari. "Synthesis of GaN Nanoparticles by DC Plasma Enhanced Chemical Vapor Deposition." Advanced Materials Research 829 (November 2013): 897–901. http://dx.doi.org/10.4028/www.scientific.net/amr.829.897.

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The unique optical properties of nanostructured GaN basically, turn it as a very important part of many electronic and optoelectronic devices such as high power transistors, UV detectors, solar cells, lasers and blue LED. The aim of the current study is GaN nanoparticle deposition at low temperature in preferred direction. In this work, GaN nanoparticles were prepared using direct current plasma enhanced chemical vapor deposition (DC-PECVD) method on Si (100) wafer as a substrate at 700°C. Gallium metal and nitrogen plasma were used as precursors. GaN nanoparticles were grown based on the direct reaction between gallium atoms and excited nitrogen species in the plasma. Structural and morphological characterizations of GaN nanoparticles were carried out using X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDS) and field emissions electron microscopy (FE-SEM). Preferred (100) direction of GaN nanostructures which obtained by careful control of processing parameters, were revealed by XRD. FE-SEM images show the average diameter of nanoparticles is 37 nm. The EDS results show the Ga to N ratio in the sample was 8.8 to 1.2 by weight which is very close to the Ga to N ratio of prefect GaN crystal. The deviance is related to the nitrogen vacancy of the sample. These results demonstrate a simple inexpensive method for GaN nanoparticle deposition at low temperature which is critical for many of applications.

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Lee, Chao-Yu, Fa-Hsing Yeh, and Ing-Song Yu. "A Commercial Carbonaceous Anode with a-Si Layers by Plasma Enhanced Chemical Vapor Deposition for Lithium Ion Batteries." Journal of Composites Science 4, no. 2 (June 11, 2020): 72. http://dx.doi.org/10.3390/jcs4020072.

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In this study, we propose a mass production-able and low-cost method to fabricate the anodes of Li-ion battery. Carbonaceous anodes, integrated with thin amorphous silicon layers by plasma enhanced chemical vapor deposition, can improve the performance of specific capacity and coulombic efficiency for Li-ion battery. Three different thicknesses of a-Si layers (320, 640, and 960 nm), less than 0.1 wt% of anode electrode, were deposited on carbonaceous electrodes at low temperature 200 °C. Around 30 mg of a-Si by plasma enhanced chemical vapor deposition (PECVD) can improve the specific capacity ~42%, and keep coulombic efficiency of the half Li-ion cells higher than 85% after first cycle charge-discharge test. For the thirty cyclic performance and rate capability, capacitance retention can maintain above 96%. The thicker a-Si layers on carbon anodes, the better electrochemical performance of anodes with silicon-carbon composites we get. The traditional carbonaceous electrodes can be deposited a-Si layers easily by plasma enhanced chemical vapor deposition, which is a method with high potential for industrialization.

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Zheng, Shan, Guofang Zhong, Xingyi Wu, Lorenzo D'Arsiè, and John Robertson. "Metal-catalyst-free growth of graphene on insulating substrates by ammonia-assisted microwave plasma-enhanced chemical vapor deposition." RSC Advances 7, no. 53 (2017): 33185–93. http://dx.doi.org/10.1039/c7ra04162d.

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We study the metal-catalyst-free growth of uniform and continuous graphene on different insulating substrates by microwave plasma-enhanced chemical vapor deposition (PECVD) with a gas mixture of C₂H₂, NH₃, and H₂ at a temperature of 700–750 °C.

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An, Kunsik, Ho-Nyun Lee, Kwan Hyun Cho, Seung-Woo Lee, David J. Hwang, and Kyung-Tae Kang. "Role of a 193 nm ArF Excimer Laser in Laser-Assisted Plasma-Enhanced Chemical Vapor Deposition of SiNx for Low Temperature Thin Film Encapsulation." Micromachines 11, no. 1 (January 13, 2020): 88. http://dx.doi.org/10.3390/mi11010088.

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In this study, silicon nitride thin films are deposited on organic polyethylene-naphthalate (PEN) substrates by laser assisted plasma enhanced chemical vapor deposition (LAPECVD) at a low temperature (150 °C) for the purpose of evaluating the encapsulation performance. A plasma generator is placed above the sample stage as conventional plasma enhanced chemical vapor deposition (PECVD) configuration, and the excimer laser beam of 193 nm wavelength illuminated in parallel to the sample surface is coupled to the reaction zone between the sample and plasma source. Major roles of the laser illumination in LAPECVD process are to compete with or complement the plasma decomposition of reactant gases. While a laser mainly decomposes ammonia molecules in the plasma, it also contributes to the photolysis of silane in the plasma state, possibly through the resulting hydrogen radicals and the excitation of intermediate disilane products. It will also be shown that the LAPECVD with coupled laser illumination of 193 nm wavelength improves the deposition rate of silicon nitride thin film, and the encapsulation performance evaluated via the measurement of water vapor transmission rate (WVTR).

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Kim, Hee Joon, Dong Young Jang, Prem Kumar Shishodia, and Akira Yoshida. "Growth of Highly Oriented Zinc Oxide Thin Films by Plasma Enhanced Chemical Vapor Deposition." Key Engineering Materials 321-323 (October 2006): 1687–90. http://dx.doi.org/10.4028/www.scientific.net/kem.321-323.1687.

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In the paper, zinc oxide (ZnO) thin films are deposited by plasma enhanced chemical vapor deposition (PECVD) at different substrate temperatures. The ZnO films are characterized by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The analysis results indicate that highly crystalline films with high orientation can be obtained at a substrate temperature of 300 oC with 50 ml/min flow rate from Diethylzinc (DEZ). Furthermore, the investigation of optical property shows that ZnO films are transparent, and the peak transmittance in the visible region is as high as 85%.

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Bissett, Mark Alexander, Anders Jack Barlow, Joe George Shapter, and Jamie Scott Quinton. "Raman Characterisation of Carbon Nanotubes Grown by Plasma Enhanced Chemical Vapour Deposition." Materials Science Forum 700 (September 2011): 112–15. http://dx.doi.org/10.4028/www.scientific.net/msf.700.112.

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Simple and up-scalable production of carbon nanotubes (CNTs) still remains difficult with current production methods. Plasma enhanced chemical vapour deposition (PECVD) provides an excellent method for producing high purity and large amounts of carbon nanotubes. This work demonstrates how PECVD can be used to tailor the required properties in the resultant nanotubes produced. By altering only one of the growth variables the resultant CNTs can be altered from single-walled to multi-walled. This was achieved by altering the growth temperature from 450-650°C, altering the growth time and altering the underlying catalyst and supporting layer. High purity SWCNT and MWCNT could be produced and easily distinguished leading to a wide range of applications.

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42

Dasgupta, Kinshuk, Mahnoosh Khosravifar, Shrilekha Sawant, Paa Kwasi Adusei, Sathya Narayan Kanakaraj, Jacob Kasik, and Vesselin Shanov. "Nitrogen-Doped Flower-Like Hybrid Structure Based on Three-Dimensional Graphene." C — Journal of Carbon Research 6, no. 2 (June 19, 2020): 40. http://dx.doi.org/10.3390/c6020040.

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A new flower-like hybrid structure consisting of nitrogen-doped 3-dimensional (3D) graphene and vertically aligned graphene has been synthesized using a combination of low-pressure chemical vapor deposition (LPCVD) and plasma-enhanced chemical vapor deposition (PECVD) techniques. Active nitrogen (N) species were found to be essential for the growth of the flower-like morphology. N-doping was responsible for enhanced electrical conductivity and wettability of the obtained nano-carbon hybrid structure. Based on the conducted studies a growth mechanism has been proposed. The high specific surface area, low resistance to charge transfer and enhanced specific capacitance of this nitrogen-doped hybrid structure, makes it an excellent candidate material for supercapacitors.

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Cho, N. I., Y. M. Kim, J. S. Lim, C. Hong, Y. Sul, and C. K. Kim. "Laser annealing effect of SiC films prepared by PECVD (plasma enhanced chemical vapor deposition)." Thin Solid Films 409, no. 1 (April 2002): 1–7. http://dx.doi.org/10.1016/s0040-6090(02)00094-9.

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Lee, Eun-Tae, Bum-Jin Kim, and Gun-Eik Jang. "Characterization of α-Fe2O3 thin films processed by plasma enhanced chemical vapor deposition (PECVD)." Thin Solid Films 341, no. 1-2 (March 1999): 73–78. http://dx.doi.org/10.1016/s0040-6090(98)01530-2.

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Lucovsky, G., D. V. Tsu, S. S. Kim, R. J. Markunas, and G. G. Fountain. "Formation of thin film dielectrics by remote plasma-enhanced chemical-vapor deposition (remote PECVD)." Applied Surface Science 39, no. 1-4 (October 1989): 33–56. http://dx.doi.org/10.1016/0169-4332(89)90418-2.

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46

UNGER, E. "ChemInform Abstract: Generation of Thin Solid Films by PECVD (Plasma Enhanced Chemical Vapor Deposition)." ChemInform 22, no. 37 (August 22, 2010): no. http://dx.doi.org/10.1002/chin.199137315.

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Thongrom, Sukrit, Yutthana Tirawanichakul, Nantakan Munsit, and Chalongrat Deangngam. "One-step microwave plasma enhanced chemical vapor deposition (MW-PECVD) for transparent superhydrophobic surface." IOP Conference Series: Materials Science and Engineering 311 (February 2018): 012015. http://dx.doi.org/10.1088/1757-899x/311/1/012015.

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Mroczyński, Robert, and Romuald Beck. "Silicon Oxynitride Layers Fabricated by Plasma Enhanced Chemical Vapor Deposition (PECVD) for CMOS Devices." ECS Transactions 25, no. 8 (December 17, 2019): 797–804. http://dx.doi.org/10.1149/1.3207669.

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Ding, Jian Ning, Feng Ye, Shu Bo Wang, and Ning Yi Yuan. "Effects of Phosphorus-Doping on the Microstructures, Optical and Electric Properties in N-Type Si:H Thin Films." Key Engineering Materials 483 (June 2011): 711–15. http://dx.doi.org/10.4028/www.scientific.net/kem.483.711.

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In this paper we present a system study of phosphorus-doped hydrogenated silicon (Si:H) films prepared on glass by plasma enhanced chemical vapor deposition (PECVD) technique with radio frequency (RF) (13.56 MHz) and DC bias stimulation. The films were characterized using Raman spectroscopy, X-ray diffraction (XRD), optical transmittance and square resistance measurement.

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Li, Yan Long, Zhong Lin Zhang, Hong Gang, and Peng Qiu. "Deposition and Properties of Hydrogenated Microcrystalline Silicon (μc-Si:H) Films for Solar Cells." Advanced Materials Research 662 (February 2013): 173–76. http://dx.doi.org/10.4028/www.scientific.net/amr.662.173.

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Radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) technique is widely used in preparing uniform and large area a-Si:H films for various photoelectric devices. However, in the deposition processes of PECVD, the plasma bombardment to the deposited films will result in hindering the processes of crystallization. In the processes of hot-wire chemical vapor deposition (HWCVD), high-crystallinity films with a quickly growth rate can be obtained. In this article, hydrogenated microcrystalline silicon (μc-Si:H) films on glass substrate were prepared by a combination technique of HWCVD and RF inductively coupled plasma (ICP) at a low pressure (7Pa). The deposition parameters including the distance between the glass substrate with the hot wire and the flow ratio of SiH4/H2 in order to optimize the properties of μc-Si:H films. The crystallinity, microstructure, electrical and optical properties of the μc-Si:H films were investigated by Raman Spectroscopy, X-ray diffraction analysis (XRD), and UV-visible spectrometer, respectively. The results indicate that the crystallinity of the μc-Si:H films can be controlled at a very wide range and the deposition rate is up to 3nm/s. The deposited films show excellence electrical and optical properties.

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