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Relevant bibliographies by topics / Plasma Enhanced Chemical Vapour deposition

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Academic literature on the topic 'Plasma Enhanced Chemical Vapour deposition'

Author: Grafiati

Published: 4 June 2021

Last updated: 6 September 2023

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Journal articles on the topic "Plasma Enhanced Chemical Vapour deposition"

1

Bain, M. F., B. M. Armstrong, and H. S. Gamble. "Deposition of tungsten by plasma enhanced chemical vapour deposition." Le Journal de Physique IV 09, PR8 (September 1999): Pr8–827—Pr8–833. http://dx.doi.org/10.1051/jp4:19998105.

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Fu, Xiuhua, Lin Li, Gibson Des, Waddell Ewan, and Wingo Lv. "Modelling and optimization of f ilm thickness variation for plasma enhanced chemical vapour deposition processes." Chinese Optics Letters 11, S1 (2013): S10209. http://dx.doi.org/10.3788/col201311.s10209.

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Jones, Philip A., Andrew D. Jackson, Paul D. Lickiss, Richard D. Pilkington, and Robert D. Tomlinson. "The plasma enhanced chemical vapour deposition of CuInSe2." Thin Solid Films 238, no. 1 (January 1994): 4–7. http://dx.doi.org/10.1016/0040-6090(94)90638-6.

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Sharma, Uttam, Sachin S. Chauhan, Jayshree Sharma, A. K. Sanyasi, J. Ghosh, K. K. Choudhary, and S. K. Ghosh. "Tungsten Deposition on Graphite using Plasma Enhanced Chemical Vapour Deposition." Journal of Physics: Conference Series 755 (October 2016): 012010. http://dx.doi.org/10.1088/1742-6596/755/1/012010.

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Oehr, C., and H. Suhr. "Deposition of silver films by plasma-enhanced chemical vapour deposition." Applied Physics A Solids and Surfaces 49, no. 6 (December 1989): 691–96. http://dx.doi.org/10.1007/bf00616995.

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Jašek, Ondřej, Petr Synek, Lenka Zajíčková, Marek Eliáš, and Vít Kudrle. "Synthesis of Carbon Nanostructures by Plasma Enhanced Chemical Vapour Deposition at Atmospheric Pressure." Journal of Electrical Engineering 61, no. 5 (September 1, 2010): 311–13. http://dx.doi.org/10.2478/v10187-011-0049-9.

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Synthesis of Carbon Nanostructures by Plasma Enhanced Chemical Vapour Deposition at Atmospheric PressureCarbon nanostructures present the leading field in nanotechnology research. A wide range of chemical and physical methods was used for carbon nanostructures synthesis including arc discharges, laser ablation and chemical vapour deposition. Plasma enhanced chemical vapour deposition (PECVD) with its application in modern microelectronics industry became soon target of research in carbon nanostructures synthesis. Selection of the ideal growth process depends on the application. Most of PECVD techniques work at low pressure requiring vacuum systems. However for industrial applications it would be desirable to work at atmospheric pressure. In this article carbon nanostructures synthesis by plasma discharges working at atmospheric pressure will be reviewed.

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Choi, Seong S., D. W. Kim, J. W. Joe, J. H. Moon, K. C. Park, and J. Jang. "Deposition of diamondlike carbon films by plasma enhanced chemical vapour deposition." Materials Science and Engineering: B 46, no. 1-3 (April 1997): 133–36. http://dx.doi.org/10.1016/s0921-5107(96)01948-4.

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Ramirez, J., H. Suhr, L. Szepes, L. Zanathy, and A. Nagy. "Deposition of silicon carbide films by plasma enhanced chemical vapour deposition." Journal of Organometallic Chemistry 514, no. 1-2 (May 1996): 23–28. http://dx.doi.org/10.1016/0022-328x(95)06032-r.

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Carreño, M. N. P., J. P. Bottecchia, and I. Pereyra. "Low temperature plasma enhanced chemical vapour deposition boron nitride." Thin Solid Films 308-309 (October 1997): 219–22. http://dx.doi.org/10.1016/s0040-6090(97)00389-1.

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Nagels, P., E. Sleeckx, and R. Callaerts. "Plasma-Enhanced Chemical Vapour Deposition of Amorphous Se Films." Le Journal de Physique IV 05, no. C5 (June 1995): C5–1109—C5–1115. http://dx.doi.org/10.1051/jphyscol:19955131.

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Dissertations / Theses on the topic "Plasma Enhanced Chemical Vapour deposition"

1

Rosenblad, Carsten. "Development of a plasma enhanced chemical vapour deposition system /." [S.l.] : [s.n.], 2000. http://e-collection.ethbib.ethz.ch/show?type=diss&nr=13601.

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Sawtell, David Arthur Gregory. "Plasma enhanced chemical vapour deposition of silica thin films." Thesis, University of Manchester, 2011. https://www.research.manchester.ac.uk/portal/en/theses/plasma-enhanced-chemical-vapour-deposition-of-silica-thin-films(2c75bbd8-8d89-42f2-b926-b464e619b4aa).html.

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Atmospheric pressure chemical vapour deposition is an industrially significant process for forming functional thin films. There is a great opportunity for increased scientific understanding with the aim of improving current processes and helping to formulate new ones. This work is concerned with developing a methodology to assist this ongoing concern. A combination of spectroscopic and chemometric techniques are used to investigate several chemical vapour deposition processes. The first investigation concerns the spatial concentration mapping of key by-products during the thermal chemical vapour deposition of tin oxide films through the use of near infra red laser diode spectroscopy. This novel two dimensional characterisation of the process has identified reaction hotspots within the process, and has identified the redundancy of part of the exhaust mechanism. Subsequently, there has been improvements to the head design, and the operation of the process.The main thrust of the investigations are focussed towards the use of chemometric methods, such as experimental design and principal components analysis, in conjunction with a suite of spectroscopic measurement techniques, to analyse the plasma enhanced chemical vapour deposition of silica films. This work has shown the importance of active oxygen species on the chemistry. It has also been shown that the film properties are highly dependant on oxygen concentration in the reactor, and hence active oxygen species forming in the plasma. The identification of by-products in the silica deposition process has also been carried out for the first time. Finally, this work also presents the first rigorous studies of a new precursor for silica deposition, dichlorodimethylsilane.

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Chuang, A. T. H. "Microwave plasma-enhanced chemical vapour deposition of carbon nanotubes and nanostructures." Thesis, University of Cambridge, 2008. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.597683.

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Microwave plasma-enhanced chemical vapour deposition (PECVD) as a scalable and low temperature synthesis technique for carbon nanostructures has been investigated in this thesis. A PECVD reactor based on ASTeX-type microwave reactors was implemented to facilitate both contact and remote plasma operations. By creating a remote plasma environment and using sandwich-like catalytic structures (Al₂O₃/Fe/Al₂O₃), densely packed and vertically aligned single-walled carbon nanotubes (SWNTs) can be synthesized consistently for temperatures between 600-650°C. Carbon species ultimately responsible for SWNT synthesis are speculated to be the more stable and long-chained species from plasma activation. Wet chemistry techniques such as cobalt colloids and iron solution are alternatives to conventional physical vapour deposition methods for catalyst preparation. Silicon micrograss and carbon fibre matrices serve as limiting cases for extreme topology for three-dimensional catalyst coating using the wet chemistry techniques. Hierarchical control of the physical and chemical texture on wetting behaviour is demonstrated by selective carbon nanotubes growth based on microscale and nanoscale surface textures. Direct synthesis of SWNTs on carbon fibres is achieved using iron solution catalyst in the remote plasma environment. Carbon nanowalls are synthesized as freestanding three-dimensional aggregates. The differentiating morphology from the surface-bound material suggests a different growth mechanism, and similarities to the formation of carbon nanohorns. The results establish a scalable production method and possible applications based on the properties such as the stable field emission and high surface area.

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Froggatt, M. W. D. "Microcrystalline silicon thin film transistors made by plasma enhanced chemical vapour deposition." Thesis, University of Cambridge, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.599237.

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Currently the transistors required for active matrix liquid crystal displays (AMLCDs) are fabricated using hydrogenated amorphous silicon (a-Si:H) owing to its large area capability and compatibility with a wide range of low cost substrates. Future displays will however require a material with a higher field effect mobility than a-Si:H and while polycrystalline silicon (poly-Si) can meet these requirements it does so currently at the expense of large area or low temperature substrate compatibility. The thesis investigates the suitability of hydrogenated microcrystalline silicon (μc-Si:H) for channel layers in thin film transistors (TFTs). μc-Si:H is a biphasic material consisting of crystalline regions in an amorphous matrix, and potentially offers a large area, low temperature deposition process similar to that of a-Si:H while providing an enhanced field effect mobility. Using the hydrogen dilution method in a conventional plasma enhanced chemical vapour deposition (PECVD) system μc-Si:H films were deposited and characterised. Films deposited by this method exhibited only moderate crystallinity but a wide range of conductivities, suggesting that impurity incorporation may have a more significant effect on microcrystalline films than their amorphous counterparts. TFTs fabricated using μc-Si:H channel layers exhibited clear transistor action, but field effect mobilities were uniformly lower than for equivalent structure a-Si:H channel devices. Significantly, attempts to improve the crystallinity of the channel layer resulted in degraded TFT performance consistent with an increase in defect rich material. The temperature dependence of mobility of μc-Si:H channel devices suggests that the reduced performance is a consequence of an increased density of conduction band tail states in μc-Si:H compared to a-Si:H. This increased density is in turn proposed to be due to the introduction of crystallites into the amorphous matrix and the subsequent increase in the density of weak Si-Si bonds.

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Mohamed, Eman. "Microcrystalline silicon thin films prepared by hot-wire chemical vapour deposition." Thesis, Mohamed, Eman (2004) Microcrystalline silicon thin films prepared by hot-wire chemical vapour deposition. PhD thesis, Murdoch University, 2004. https://researchrepository.murdoch.edu.au/id/eprint/205/.

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Silicon is widely used in optoelectronic devices, including solar cells. In recent years new forms of silicon have become available, including amorphous, microcrystalline and nano-crystalline material. These new forms have great promise for low cost, thin film solar cells and the purpose of this work is to investigate their preparation and properties with a view to their future use in solar cells. A Hot Wire-Deposition Chemical Vapour Deposition CVD (HW-CVD) system was constructed to create a multi-chamber high vacuum system in combination with an existing Plasma Enhanced Chemical Vapour Deposition (PECVD) system; to study the amorphous to crystalline transition in silicon thin films. As the two chambers were linked by a common airlock, it was essential to construct a transfer mechanism to allow the transfer of the sample holder between the two systems. This was accomplished by the incorporation of two gate valves between the two chambers and the common airlock as well as a rail system and a magnetic drive that were designed to support the weight of, and to guide the sample holder through the system. The effect of different deposition conditions on the properties and structure of the material deposited in the combined HW-CVD:PECVD system were investigated. The conditions needed to obtain a range of materials, including amorphous, nano- and microcrystalline silicon films were determined and then successfully replicated. The structure of each material was analysed using Transmission Electron Microscopy (TEM). The presence of crystallites in the material was confirmed and the structure of the material detected by TEM was compared to the results obtained by Raman spectroscopy. The Raman spectrum of each sample was decoupled into three components representing the amorphous, intermediate and crystalline phases. The Raman analysis revealed that the amorphous silicon thin film had a dominant amorphous phase with smaller contribution from the intermediate and crystalline phase. This result supported the findings of the TEM studies which showed some medium range order. Analysis of the Raman spectrum for samples deposited at increasing filament temperatures showed that the degree of order within the samples increased, with the evolution of the crystalline phase and decline of the amorphous phase. The Selected Area Diffraction (SAD) patterns obtained from the TEM were analysed to gain qualitative information regarding the change in crystallite size. These findings have been confirmed by the TEM micrograph measurements. The deposition regime where the transition from amorphous to microcrystalline silicon took place was examined by varying the deposition parameters of filament temperature, total pressure in the chamber, gas flow rate, deposition time and substrate temperature. The IR absorption spectrum for [mu]c-Si showed the typical peaks at 2100cm-1 and 626cm-1, of the stretching and wagging modes, respectively. The increase in the crystallinity of the thin films was consistent with the evolution of the 2100cm-1 band in IR, and the decreasing hydrogen content, as well as the shift of the wagging mode to lower wavenumber. IR spectroscopy has proven to be a sensitive technique for detecting the crystalline phase in the deposited material. Several devices were also constructed by depositing the [mu]c-Si thin films as the intrinsic layer in a solar cell, to obtain information on their characteristics. The p- layer (amorphous silicon) was deposited in the PECVD chamber, and the sample was then transferred under vacuum using the transport system to the HW-CVD chamber where the i-layer (microcrystalline silicon) was deposited. The sample holder was transferred back to the PECVD chamber where the n-layer (amorphous silicon) was deposited. The research presented in this thesis represents a preliminary investigation of the properties of [mu]c-Si thin films. Once the properties and optimum deposition characteristics for thin films are established, this research can form the basis for the optimization of a solar cell consisting of the most efficient combination of amorphous, nano- and microcrystalline materials.

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Mohamed, Eman. "Microcrystalline silicon thin films prepared by hot-wire chemical vapour deposition." Mohamed, Eman (2004) Microcrystalline silicon thin films prepared by hot-wire chemical vapour deposition. PhD thesis, Murdoch University, 2004. http://researchrepository.murdoch.edu.au/205/.

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Silicon is widely used in optoelectronic devices, including solar cells. In recent years new forms of silicon have become available, including amorphous, microcrystalline and nano-crystalline material. These new forms have great promise for low cost, thin film solar cells and the purpose of this work is to investigate their preparation and properties with a view to their future use in solar cells. A Hot Wire-Deposition Chemical Vapour Deposition CVD (HW-CVD) system was constructed to create a multi-chamber high vacuum system in combination with an existing Plasma Enhanced Chemical Vapour Deposition (PECVD) system; to study the amorphous to crystalline transition in silicon thin films. As the two chambers were linked by a common airlock, it was essential to construct a transfer mechanism to allow the transfer of the sample holder between the two systems. This was accomplished by the incorporation of two gate valves between the two chambers and the common airlock as well as a rail system and a magnetic drive that were designed to support the weight of, and to guide the sample holder through the system. The effect of different deposition conditions on the properties and structure of the material deposited in the combined HW-CVD:PECVD system were investigated. The conditions needed to obtain a range of materials, including amorphous, nano- and microcrystalline silicon films were determined and then successfully replicated. The structure of each material was analysed using Transmission Electron Microscopy (TEM). The presence of crystallites in the material was confirmed and the structure of the material detected by TEM was compared to the results obtained by Raman spectroscopy. The Raman spectrum of each sample was decoupled into three components representing the amorphous, intermediate and crystalline phases. The Raman analysis revealed that the amorphous silicon thin film had a dominant amorphous phase with smaller contribution from the intermediate and crystalline phase. This result supported the findings of the TEM studies which showed some medium range order. Analysis of the Raman spectrum for samples deposited at increasing filament temperatures showed that the degree of order within the samples increased, with the evolution of the crystalline phase and decline of the amorphous phase. The Selected Area Diffraction (SAD) patterns obtained from the TEM were analysed to gain qualitative information regarding the change in crystallite size. These findings have been confirmed by the TEM micrograph measurements. The deposition regime where the transition from amorphous to microcrystalline silicon took place was examined by varying the deposition parameters of filament temperature, total pressure in the chamber, gas flow rate, deposition time and substrate temperature. The IR absorption spectrum for [mu]c-Si showed the typical peaks at 2100cm-1 and 626cm-1, of the stretching and wagging modes, respectively. The increase in the crystallinity of the thin films was consistent with the evolution of the 2100cm-1 band in IR, and the decreasing hydrogen content, as well as the shift of the wagging mode to lower wavenumber. IR spectroscopy has proven to be a sensitive technique for detecting the crystalline phase in the deposited material. Several devices were also constructed by depositing the [mu]c-Si thin films as the intrinsic layer in a solar cell, to obtain information on their characteristics. The p- layer (amorphous silicon) was deposited in the PECVD chamber, and the sample was then transferred under vacuum using the transport system to the HW-CVD chamber where the i-layer (microcrystalline silicon) was deposited. The sample holder was transferred back to the PECVD chamber where the n-layer (amorphous silicon) was deposited. The research presented in this thesis represents a preliminary investigation of the properties of [mu]c-Si thin films. Once the properties and optimum deposition characteristics for thin films are established, this research can form the basis for the optimization of a solar cell consisting of the most efficient combination of amorphous, nano- and microcrystalline materials.

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Haberer, Elaine D. (Elaine Denise) 1975. "Particle generation in a chemical vapor deposition/plasma-enhanced chemical vapor deposition interlayer dielectric tool." Thesis, Massachusetts Institute of Technology, 1998. http://hdl.handle.net/1721.1/8992.

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Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1998.
Includes bibliographical references (p. 77-79).
The interlayer dielectric plays an important role in multilevel integration. Material choice, processing, and contamination greatly impact the performance of the layer. In this study, particle generation, deposition, and adhesion mechanisms are reviewed. In particular, four important sources of interlayer dielectric particle contamination were investigated: the cleanroom environment, improper wafer handling, the backside of the wafer, and microarcing during process.
by Elaine D. Haberer.
S.M.

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Quesada-Gonzalez, Miguel. "Synthesis and characterisation of B-TiO2 thin films by atmospheric pressure chemical vapour deposition and plasma enhanced chemical vapour deposition : functional films for different substrates." Thesis, University College London (University of London), 2018. http://discovery.ucl.ac.uk/10055015/.

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Anatase, a form of titanium dioxide (TiO2), is arguably the most studied wide band gap semiconducting photocatalyst. TiO2 has many other applications, including water and air purification, self-cleaning surfaces and photovoltaic. However, for many applications, as well as for safety concerns related to the handling of nanoparticles, the simultaneous synthesis and deposition of photocatalytic TiO2 thin films is highly desirable. Numerous routes towards the simultaneous synthesis and deposition of anatase TiO2 thin films have already been reported. Chemical vapour deposition (CVD) methods have successfully been implemented for the industrial production of photocatalytic TiO2 thin films. Nevertheless, the rather high temperature required in CVD does not allow the coating of heat sensitive substrates. Similarly, other photocatalytic TiO2 deposition processes all possess significant drawbacks, such as the lowpressure environment required by physical vapour deposition (PVD) and the post-heating treatment or the large number of steps required by sol-gel approaches. In addition, most of the methods remain difficult to implement on complex shape substrates and/or non-conformal. The following research thesis reports on new functional coatings, based on boron-doped TiO2, which were deposited by APCVD and AP-PECVD on different matrices and substrates. Boron, as a dopant for TiO2 systems, has been used and reported to enhanced TiO2 photocatalytic performance under UV light, as well as numerous scientific papers reported on the visible light response of borondoped TiO2. However, in most of the cases the successful B-TiO2 was synthesised in the form of powders, not thin films. Also, when B-TiO2 thin films were synthesised, only substitutional boron-doped TiO2 was previously reported, whereas, the higher stability and long-term life of interstitial boron vs substitutional has been proven and reported theoretically and experimentally.

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Trwoga, Philip Francis. "A study of luminescence from silicon-rich silica fabricated by plasma enhanced chemical vapour deposition." Thesis, University College London (University of London), 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.298241.

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Miller, Larry M. "Plasma enhanced chemical vapor deposition of thin aluminum oxide films." Ohio : Ohio University, 1993. http://www.ohiolink.edu/etd/view.cgi?ohiou1175717717.

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Books on the topic "Plasma Enhanced Chemical Vapour deposition"

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Konuma, Mitsuharu. Plasma techniques for film deposition. Harrow, U.K: Alpha Science International, 2005.

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United States. National Aeronautics and Space Administration. Scientific and Technical Information Program., ed. Numerical modeling tools for chemical vapor deposition. [Washington, D.C.]: National Aeronautics and Space Administration, Office of Management, Scientific and Technical Information Program, 1992.

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Etemadi, Peyman. Plasma enhanced chemical vapor deposition of crystalline diamond films. Ottawa: National Library of Canada, 2002.

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1950-, Konuma Mitsuharu, ed. Film deposition by plasma techniques. Berlin: Springer-Verlag, 1992.

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United States. National Aeronautics and Space Administration., ed. An overview of CVD processes. Washington DC: National Aeronautics and Space Administration, 1986.

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Michalski, Andrzej. Krystalizacja warstw wielofazowych z plazmy impulsowej. Warszawa: Wydawnictwa Politechniki Warszawskiej, 1987.

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Prani͡avichi͡us, L. Coating technology : ion beam deposition. Warwick, R.I: Satas & Associates, 1993.

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Giovanni, Bruno, Capezzuto Pio, and Madan A, eds. Plasma deposition of amorphous silicon-based materials. Boston: Academic Press, 1995.

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Riccardo, D'Agostino, Favia Pietro, Fracassi Francesco, and NATO Advanced Study Institute on Plasma Treatments and Deposition of Polymers (1996 : Acquafredda di Maratea, Italy), eds. Plasma processing of polymers. Dordrecht: Kluwer Academic Publishers, 1997.

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Geiser, Juergen. Simulation of deposition processes with PECVD apparatus. Hauppauge, N.Y: Nova Science Publishers, 2011.

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Book chapters on the topic "Plasma Enhanced Chemical Vapour deposition"

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Lau, Kenneth K. S. "Plasma-Enhanced Chemical Vapor Deposition." In Medical Coatings and Deposition Technologies, 495–530. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2016. http://dx.doi.org/10.1002/9781119308713.ch14.

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Milella, Antonella, and Fabio Palumbo. "Plasma-Enhanced Chemical Vapor Deposition." In Encyclopedia of Membranes, 1–3. Berlin, Heidelberg: Springer Berlin Heidelberg, 2014. http://dx.doi.org/10.1007/978-3-642-40872-4_1106-1.

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d’Agostino, R., P. Favia, F. Fracassi, and R. Lamendola. "Plasma-Enhanced Chemical Vapor Deposition." In Eurocourses: Mechanical and Materials Science, 105–33. Dordrecht: Springer Netherlands, 1992. http://dx.doi.org/10.1007/978-94-017-0631-5_6.

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Roualdes, Stephanie. "Plasma-Enhanced Chemical Vapor Deposition (Plasma Polymerization)." In Encyclopedia of Membranes, 1–2. Berlin, Heidelberg: Springer Berlin Heidelberg, 2015. http://dx.doi.org/10.1007/978-3-642-40872-4_1226-4.

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Lamendola, Ritalba, and Riccardo d’Agostino. "Mechanism in Plasma Enhanced Chemical Vapour Deposition from Organosilicon Feeds." In Plasma Processing of Polymers, 321–33. Dordrecht: Springer Netherlands, 1997. http://dx.doi.org/10.1007/978-94-015-8961-1_16.

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Winter, Patrick M., Gregory M. Lanza, Samuel A. Wickline, Marc Madou, Chunlei Wang, Parag B. Deotare, Marko Loncar, et al. "Plasma-Enhanced Chemical Vapor Deposition (PECVD)." In Encyclopedia of Nanotechnology, 2126. Dordrecht: Springer Netherlands, 2012. http://dx.doi.org/10.1007/978-90-481-9751-4_100662.

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Droes, Stevenx R., Toivo T. Kodas, and Mark J. Hampden-Smith. "Plasma-Enhanced Chemical Vapor Deposition (PECVD)." In Carbide, Nitride and Boride Materials Synthesis and Processing, 579–603. Dordrecht: Springer Netherlands, 1997. http://dx.doi.org/10.1007/978-94-009-0071-4_23.

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Cale, T. S., G. B. Raupp, B. R. Rogers, F. R. Myers, and T. E. Zirkle. "Introduction to Plasma Enhanced Chemical Vapor Deposition." In Plasma Processing of Semiconductors, 89–108. Dordrecht: Springer Netherlands, 1997. http://dx.doi.org/10.1007/978-94-011-5884-8_5.

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Reif, Rafael. "Deposition for Microelectronics—Plasma Enhanced Chemical Vapor Deposition." In Handbook of Advanced Semiconductor Technology and Computer Systems, 1–26. Dordrecht: Springer Netherlands, 1988. http://dx.doi.org/10.1007/978-94-011-7056-7_1.

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Corbella, C., O. Sánchez, and J. M. Albella. "Plasma-Enhanced Chemical Vapor Deposition of Thin Films." In Plasma Applications for Material Modification, 17–53. New York: Jenny Stanford Publishing, 2021. http://dx.doi.org/10.1201/9781003119203-2.

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Conference papers on the topic "Plasma Enhanced Chemical Vapour deposition"

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Baraton, Laurent, Laurent Gangloff, Stéphane Xavier, Costel S. Cojocaru, Vincent Huc, Pierre Legagneux, Young Hee Lee, and Didier Pribat. "Growth of graphene films by plasma enhanced chemical vapour deposition." In SPIE NanoScience + Engineering, edited by Manijeh Razeghi, Didier Pribat, and Young-Hee Lee. SPIE, 2009. http://dx.doi.org/10.1117/12.828747.

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Yalamanchi, R. S., and G. K. M. Thutupalli. "Diamond-Like Carbon Films By RF Plasma - Enhanced Chemical Vapour Deposition." In 32nd Annual Technical Symposium, edited by Albert Feldman and Sandor Holly. SPIE, 1989. http://dx.doi.org/10.1117/12.948138.

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Olmer, L. J., and E. R. Lory. "Intermetal dielectric deposition by plasma enhanced chemical vapor deposition." In Fifth IEEE/CHMT International Electronic Manufacturing Technology Symposium, 1988, 'Design-to-Manufacturing Transfer Cycle. IEEE, 1988. http://dx.doi.org/10.1109/emts.1988.16157.

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Peres, I., and M. J. Kushner. "Pulsed plasma methods in remote plasma enhanced chemical vapor deposition." In International Conference on Plasma Sciences (ICOPS). IEEE, 1993. http://dx.doi.org/10.1109/plasma.1993.593613.

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Wang, S., X. Xu, M. Yin, and L. Zhao. "Chamberless plasma enhanced chemical vapor deposition of BPSG films." In 2007 IEEE Pulsed Power Plasma Science Conference. IEEE, 2007. http://dx.doi.org/10.1109/ppps.2007.4346138.

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Waddell, Ewan, Des Gibson, Li Lin, and Xiuhua Fu. "Modelling and optimization of film thickness variation for plasma enhanced chemical vapour deposition processes." In SPIE Optical Systems Design, edited by Michel Lequime, H. Angus Macleod, and Detlev Ristau. SPIE, 2011. http://dx.doi.org/10.1117/12.896696.

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Miller, S. C., and K. K. Mackamul. "Rugate Filter Construction Utilizing Plasma Enhanced Chemical Vapor Deposition." In Optical Interference Coatings. Washington, D.C.: Optica Publishing Group, 1995. http://dx.doi.org/10.1364/oic.1995.tud8.

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Successful rugate filter fabrication has been best obtained using processes which employ sophisticated process control techniques. Fundamental limitations on aperture area which directly affect manufacturing throughput are imposed by strong geometric dependencies of current processes. A Plasma Enhanced Chemical Vapor Deposition (PECVD) process, without these limitations ,was developed to fabricate rugate filters. Application of this process to solar cells, is discussed.

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Li, Wenjun, Junfu Zhao, Xiaolin Zhao, and Bingchu Cai. "Deposition of TiO 2 thin films by plasma-enhanced chemical vapor deposition." In 4th International Conference on Thin Film Physics and Applications, edited by Junhao Chu, Pulin Liu, and Yong Chang. SPIE, 2000. http://dx.doi.org/10.1117/12.408482.

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Harrison, Roland D., A. L. Leigh Jarvis, and S. Sergio Babet. "A simple microwave plasma-enhanced chemical vapour deposition system for the production of carbon nanotubes." In AFRICON 2013. IEEE, 2013. http://dx.doi.org/10.1109/afrcon.2013.6757861.

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Sukirno, Satria Zulkarnaen Bisri, Lilik Hasanah, Mursal, Ida Usman, Adi Bagus Suryamas, and Thomas Alfa Edison. "Low Temperature Carbon Nanotube Fabrication using Very High Frequency-Plasma Enhanced Chemical Vapour Deposition Method." In 2006 IEEE International Conference on Semiconductor Electronics. IEEE, 2006. http://dx.doi.org/10.1109/smelec.2006.381039.

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Reports on the topic "Plasma Enhanced Chemical Vapour deposition"

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Saravanan, Kolandaivelu. Plasma enhanced chemical vapor deposition of ZrO₂ thin films. Office of Scientific and Technical Information (OSTI), December 1993. http://dx.doi.org/10.2172/10120497.

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2

Robbins, Joshua, and Michael Seman. Electrochromic Devices Deposited on Low-Temperature Plastics by Plasma-Enhanced Chemical Vapor Deposition. Office of Scientific and Technical Information (OSTI), September 2005. http://dx.doi.org/10.2172/850233.

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Markunas, R. J., and G. G. Fountain. Development of a Ge/GaAs HMT Technology Based on Plasma Enhanced Chemical Vapor Deposition. Fort Belvoir, VA: Defense Technical Information Center, January 1992. http://dx.doi.org/10.21236/ada246991.

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Lucovsky, G. Fundamental Studies of Defect Generation in Amorphous Silicon Alloys Grown by Remote Plasma-Enhanced Chemical-Vapor Deposition, Final Subcontract Report, 1 July 1989-31 December 1992. Office of Scientific and Technical Information (OSTI), August 1993. http://dx.doi.org/10.2172/10182486.

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Lucovsky, G., R. J. Nemanich, J. Bernholc, J. Whitten, C. Wang, B. Davidson, M. Williams, D. Lee, C. Bjorkman, and Z. Jing. Fundamental Studies of Defect Generation in Amorphous Silicon Alloys Grown by Remote Plasma-Enhanced Chemical Vapor Deposition (Remote PECVD), Annual Subcontract Report, 1 September 1990 - 31 August 1991. Office of Scientific and Technical Information (OSTI), January 1993. http://dx.doi.org/10.2172/6796766.

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Lucovsky, G., R. J. Nemanich, J. Bernholc, J. Whitten, C. Wang, B. Davidson, M. Williams, D. Lee, C. Bjorkman, and Z. Jing. Fundamental studies of defect generation in amorphous silicon alloys grown by remote plasma-enhanced chemical-vapor deposition (Remote PECVD). Annual subcontract report, 1 September 1990--31 August 1991. Office of Scientific and Technical Information (OSTI), January 1993. http://dx.doi.org/10.2172/10129188.

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