Dissertations / Theses: 'Plasma Enhanced Chemical Vapour deposition'

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Rosenblad, Carsten. "Development of a plasma enhanced chemical vapour deposition system /." [S.l.] : [s.n.], 2000. http://e-collection.ethbib.ethz.ch/show?type=diss&nr=13601.

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Sawtell, David Arthur Gregory. "Plasma enhanced chemical vapour deposition of silica thin films." Thesis, University of Manchester, 2011. https://www.research.manchester.ac.uk/portal/en/theses/plasma-enhanced-chemical-vapour-deposition-of-silica-thin-films(2c75bbd8-8d89-42f2-b926-b464e619b4aa).html.

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Atmospheric pressure chemical vapour deposition is an industrially significant process for forming functional thin films. There is a great opportunity for increased scientific understanding with the aim of improving current processes and helping to formulate new ones. This work is concerned with developing a methodology to assist this ongoing concern. A combination of spectroscopic and chemometric techniques are used to investigate several chemical vapour deposition processes. The first investigation concerns the spatial concentration mapping of key by-products during the thermal chemical vapour deposition of tin oxide films through the use of near infra red laser diode spectroscopy. This novel two dimensional characterisation of the process has identified reaction hotspots within the process, and has identified the redundancy of part of the exhaust mechanism. Subsequently, there has been improvements to the head design, and the operation of the process.The main thrust of the investigations are focussed towards the use of chemometric methods, such as experimental design and principal components analysis, in conjunction with a suite of spectroscopic measurement techniques, to analyse the plasma enhanced chemical vapour deposition of silica films. This work has shown the importance of active oxygen species on the chemistry. It has also been shown that the film properties are highly dependant on oxygen concentration in the reactor, and hence active oxygen species forming in the plasma. The identification of by-products in the silica deposition process has also been carried out for the first time. Finally, this work also presents the first rigorous studies of a new precursor for silica deposition, dichlorodimethylsilane.

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Chuang, A. T. H. "Microwave plasma-enhanced chemical vapour deposition of carbon nanotubes and nanostructures." Thesis, University of Cambridge, 2008. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.597683.

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Microwave plasma-enhanced chemical vapour deposition (PECVD) as a scalable and low temperature synthesis technique for carbon nanostructures has been investigated in this thesis. A PECVD reactor based on ASTeX-type microwave reactors was implemented to facilitate both contact and remote plasma operations. By creating a remote plasma environment and using sandwich-like catalytic structures (Al₂O₃/Fe/Al₂O₃), densely packed and vertically aligned single-walled carbon nanotubes (SWNTs) can be synthesized consistently for temperatures between 600-650°C. Carbon species ultimately responsible for SWNT synthesis are speculated to be the more stable and long-chained species from plasma activation. Wet chemistry techniques such as cobalt colloids and iron solution are alternatives to conventional physical vapour deposition methods for catalyst preparation. Silicon micrograss and carbon fibre matrices serve as limiting cases for extreme topology for three-dimensional catalyst coating using the wet chemistry techniques. Hierarchical control of the physical and chemical texture on wetting behaviour is demonstrated by selective carbon nanotubes growth based on microscale and nanoscale surface textures. Direct synthesis of SWNTs on carbon fibres is achieved using iron solution catalyst in the remote plasma environment. Carbon nanowalls are synthesized as freestanding three-dimensional aggregates. The differentiating morphology from the surface-bound material suggests a different growth mechanism, and similarities to the formation of carbon nanohorns. The results establish a scalable production method and possible applications based on the properties such as the stable field emission and high surface area.

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Froggatt, M. W. D. "Microcrystalline silicon thin film transistors made by plasma enhanced chemical vapour deposition." Thesis, University of Cambridge, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.599237.

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Currently the transistors required for active matrix liquid crystal displays (AMLCDs) are fabricated using hydrogenated amorphous silicon (a-Si:H) owing to its large area capability and compatibility with a wide range of low cost substrates. Future displays will however require a material with a higher field effect mobility than a-Si:H and while polycrystalline silicon (poly-Si) can meet these requirements it does so currently at the expense of large area or low temperature substrate compatibility. The thesis investigates the suitability of hydrogenated microcrystalline silicon (μc-Si:H) for channel layers in thin film transistors (TFTs). μc-Si:H is a biphasic material consisting of crystalline regions in an amorphous matrix, and potentially offers a large area, low temperature deposition process similar to that of a-Si:H while providing an enhanced field effect mobility. Using the hydrogen dilution method in a conventional plasma enhanced chemical vapour deposition (PECVD) system μc-Si:H films were deposited and characterised. Films deposited by this method exhibited only moderate crystallinity but a wide range of conductivities, suggesting that impurity incorporation may have a more significant effect on microcrystalline films than their amorphous counterparts. TFTs fabricated using μc-Si:H channel layers exhibited clear transistor action, but field effect mobilities were uniformly lower than for equivalent structure a-Si:H channel devices. Significantly, attempts to improve the crystallinity of the channel layer resulted in degraded TFT performance consistent with an increase in defect rich material. The temperature dependence of mobility of μc-Si:H channel devices suggests that the reduced performance is a consequence of an increased density of conduction band tail states in μc-Si:H compared to a-Si:H. This increased density is in turn proposed to be due to the introduction of crystallites into the amorphous matrix and the subsequent increase in the density of weak Si-Si bonds.

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Mohamed, Eman. "Microcrystalline silicon thin films prepared by hot-wire chemical vapour deposition." Thesis, Mohamed, Eman (2004) Microcrystalline silicon thin films prepared by hot-wire chemical vapour deposition. PhD thesis, Murdoch University, 2004. https://researchrepository.murdoch.edu.au/id/eprint/205/.

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Silicon is widely used in optoelectronic devices, including solar cells. In recent years new forms of silicon have become available, including amorphous, microcrystalline and nano-crystalline material. These new forms have great promise for low cost, thin film solar cells and the purpose of this work is to investigate their preparation and properties with a view to their future use in solar cells. A Hot Wire-Deposition Chemical Vapour Deposition CVD (HW-CVD) system was constructed to create a multi-chamber high vacuum system in combination with an existing Plasma Enhanced Chemical Vapour Deposition (PECVD) system; to study the amorphous to crystalline transition in silicon thin films. As the two chambers were linked by a common airlock, it was essential to construct a transfer mechanism to allow the transfer of the sample holder between the two systems. This was accomplished by the incorporation of two gate valves between the two chambers and the common airlock as well as a rail system and a magnetic drive that were designed to support the weight of, and to guide the sample holder through the system. The effect of different deposition conditions on the properties and structure of the material deposited in the combined HW-CVD:PECVD system were investigated. The conditions needed to obtain a range of materials, including amorphous, nano- and microcrystalline silicon films were determined and then successfully replicated. The structure of each material was analysed using Transmission Electron Microscopy (TEM). The presence of crystallites in the material was confirmed and the structure of the material detected by TEM was compared to the results obtained by Raman spectroscopy. The Raman spectrum of each sample was decoupled into three components representing the amorphous, intermediate and crystalline phases. The Raman analysis revealed that the amorphous silicon thin film had a dominant amorphous phase with smaller contribution from the intermediate and crystalline phase. This result supported the findings of the TEM studies which showed some medium range order. Analysis of the Raman spectrum for samples deposited at increasing filament temperatures showed that the degree of order within the samples increased, with the evolution of the crystalline phase and decline of the amorphous phase. The Selected Area Diffraction (SAD) patterns obtained from the TEM were analysed to gain qualitative information regarding the change in crystallite size. These findings have been confirmed by the TEM micrograph measurements. The deposition regime where the transition from amorphous to microcrystalline silicon took place was examined by varying the deposition parameters of filament temperature, total pressure in the chamber, gas flow rate, deposition time and substrate temperature. The IR absorption spectrum for [mu]c-Si showed the typical peaks at 2100cm-1 and 626cm-1, of the stretching and wagging modes, respectively. The increase in the crystallinity of the thin films was consistent with the evolution of the 2100cm-1 band in IR, and the decreasing hydrogen content, as well as the shift of the wagging mode to lower wavenumber. IR spectroscopy has proven to be a sensitive technique for detecting the crystalline phase in the deposited material. Several devices were also constructed by depositing the [mu]c-Si thin films as the intrinsic layer in a solar cell, to obtain information on their characteristics. The p- layer (amorphous silicon) was deposited in the PECVD chamber, and the sample was then transferred under vacuum using the transport system to the HW-CVD chamber where the i-layer (microcrystalline silicon) was deposited. The sample holder was transferred back to the PECVD chamber where the n-layer (amorphous silicon) was deposited. The research presented in this thesis represents a preliminary investigation of the properties of [mu]c-Si thin films. Once the properties and optimum deposition characteristics for thin films are established, this research can form the basis for the optimization of a solar cell consisting of the most efficient combination of amorphous, nano- and microcrystalline materials.

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Mohamed, Eman. "Microcrystalline silicon thin films prepared by hot-wire chemical vapour deposition." Mohamed, Eman (2004) Microcrystalline silicon thin films prepared by hot-wire chemical vapour deposition. PhD thesis, Murdoch University, 2004. http://researchrepository.murdoch.edu.au/205/.

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Silicon is widely used in optoelectronic devices, including solar cells. In recent years new forms of silicon have become available, including amorphous, microcrystalline and nano-crystalline material. These new forms have great promise for low cost, thin film solar cells and the purpose of this work is to investigate their preparation and properties with a view to their future use in solar cells. A Hot Wire-Deposition Chemical Vapour Deposition CVD (HW-CVD) system was constructed to create a multi-chamber high vacuum system in combination with an existing Plasma Enhanced Chemical Vapour Deposition (PECVD) system; to study the amorphous to crystalline transition in silicon thin films. As the two chambers were linked by a common airlock, it was essential to construct a transfer mechanism to allow the transfer of the sample holder between the two systems. This was accomplished by the incorporation of two gate valves between the two chambers and the common airlock as well as a rail system and a magnetic drive that were designed to support the weight of, and to guide the sample holder through the system. The effect of different deposition conditions on the properties and structure of the material deposited in the combined HW-CVD:PECVD system were investigated. The conditions needed to obtain a range of materials, including amorphous, nano- and microcrystalline silicon films were determined and then successfully replicated. The structure of each material was analysed using Transmission Electron Microscopy (TEM). The presence of crystallites in the material was confirmed and the structure of the material detected by TEM was compared to the results obtained by Raman spectroscopy. The Raman spectrum of each sample was decoupled into three components representing the amorphous, intermediate and crystalline phases. The Raman analysis revealed that the amorphous silicon thin film had a dominant amorphous phase with smaller contribution from the intermediate and crystalline phase. This result supported the findings of the TEM studies which showed some medium range order. Analysis of the Raman spectrum for samples deposited at increasing filament temperatures showed that the degree of order within the samples increased, with the evolution of the crystalline phase and decline of the amorphous phase. The Selected Area Diffraction (SAD) patterns obtained from the TEM were analysed to gain qualitative information regarding the change in crystallite size. These findings have been confirmed by the TEM micrograph measurements. The deposition regime where the transition from amorphous to microcrystalline silicon took place was examined by varying the deposition parameters of filament temperature, total pressure in the chamber, gas flow rate, deposition time and substrate temperature. The IR absorption spectrum for [mu]c-Si showed the typical peaks at 2100cm-1 and 626cm-1, of the stretching and wagging modes, respectively. The increase in the crystallinity of the thin films was consistent with the evolution of the 2100cm-1 band in IR, and the decreasing hydrogen content, as well as the shift of the wagging mode to lower wavenumber. IR spectroscopy has proven to be a sensitive technique for detecting the crystalline phase in the deposited material. Several devices were also constructed by depositing the [mu]c-Si thin films as the intrinsic layer in a solar cell, to obtain information on their characteristics. The p- layer (amorphous silicon) was deposited in the PECVD chamber, and the sample was then transferred under vacuum using the transport system to the HW-CVD chamber where the i-layer (microcrystalline silicon) was deposited. The sample holder was transferred back to the PECVD chamber where the n-layer (amorphous silicon) was deposited. The research presented in this thesis represents a preliminary investigation of the properties of [mu]c-Si thin films. Once the properties and optimum deposition characteristics for thin films are established, this research can form the basis for the optimization of a solar cell consisting of the most efficient combination of amorphous, nano- and microcrystalline materials.

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Haberer, Elaine D. (Elaine Denise) 1975. "Particle generation in a chemical vapor deposition/plasma-enhanced chemical vapor deposition interlayer dielectric tool." Thesis, Massachusetts Institute of Technology, 1998. http://hdl.handle.net/1721.1/8992.

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Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1998.
Includes bibliographical references (p. 77-79).
The interlayer dielectric plays an important role in multilevel integration. Material choice, processing, and contamination greatly impact the performance of the layer. In this study, particle generation, deposition, and adhesion mechanisms are reviewed. In particular, four important sources of interlayer dielectric particle contamination were investigated: the cleanroom environment, improper wafer handling, the backside of the wafer, and microarcing during process.
by Elaine D. Haberer.
S.M.

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Quesada-Gonzalez, Miguel. "Synthesis and characterisation of B-TiO2 thin films by atmospheric pressure chemical vapour deposition and plasma enhanced chemical vapour deposition : functional films for different substrates." Thesis, University College London (University of London), 2018. http://discovery.ucl.ac.uk/10055015/.

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Anatase, a form of titanium dioxide (TiO2), is arguably the most studied wide band gap semiconducting photocatalyst. TiO2 has many other applications, including water and air purification, self-cleaning surfaces and photovoltaic. However, for many applications, as well as for safety concerns related to the handling of nanoparticles, the simultaneous synthesis and deposition of photocatalytic TiO2 thin films is highly desirable. Numerous routes towards the simultaneous synthesis and deposition of anatase TiO2 thin films have already been reported. Chemical vapour deposition (CVD) methods have successfully been implemented for the industrial production of photocatalytic TiO2 thin films. Nevertheless, the rather high temperature required in CVD does not allow the coating of heat sensitive substrates. Similarly, other photocatalytic TiO2 deposition processes all possess significant drawbacks, such as the lowpressure environment required by physical vapour deposition (PVD) and the post-heating treatment or the large number of steps required by sol-gel approaches. In addition, most of the methods remain difficult to implement on complex shape substrates and/or non-conformal. The following research thesis reports on new functional coatings, based on boron-doped TiO2, which were deposited by APCVD and AP-PECVD on different matrices and substrates. Boron, as a dopant for TiO2 systems, has been used and reported to enhanced TiO2 photocatalytic performance under UV light, as well as numerous scientific papers reported on the visible light response of borondoped TiO2. However, in most of the cases the successful B-TiO2 was synthesised in the form of powders, not thin films. Also, when B-TiO2 thin films were synthesised, only substitutional boron-doped TiO2 was previously reported, whereas, the higher stability and long-term life of interstitial boron vs substitutional has been proven and reported theoretically and experimentally.

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Trwoga, Philip Francis. "A study of luminescence from silicon-rich silica fabricated by plasma enhanced chemical vapour deposition." Thesis, University College London (University of London), 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.298241.

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Miller, Larry M. "Plasma enhanced chemical vapor deposition of thin aluminum oxide films." Ohio : Ohio University, 1993. http://www.ohiolink.edu/etd/view.cgi?ohiou1175717717.

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Choi, Y. J. "Very high frequency plasma enhanced chemical vapour depositions for thin film transistors." Thesis, University of Cambridge, 2005. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.597635.

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Hydrogenated amorphous silicon (a-Si:H) is increasingly being used in applications that require large-area, thin-film semiconductor. It can be deposited easily, at low temperature and low cost, on inexpensive substrates of almost any size by chemical vapour deposition methods. One of these applications of a-Si:H is the fabrication of thin-film transistors (TFTs) that are most often used in liquid crystal displays (LCDs). Plasma enhanced chemical vapour deposition (PECVD) is also called glow discharge deposition because of its visible luminosity of the plasma glow region, which is mainly the result of the de-excitation of emitting molecular and atomic species contained in the plasma. The field can be direct current (DC), radio frequency (RF), very high frequency (VHF), and microwave frequency. Deposition of a-Si:H employing the VHF-PECVD technique (typical frequency range 20-110 MHz) has been reported to yield an increase in deposition rate by one order of magnitude with respect to the conventional used frequency of 13.56 MHz, without adversely affecting material quality. The various electrical and optical properties of the VHF films were investigated as a function of main factors involved in the a-Si:H, SiN_x, and n⁺ µc-Si layers deposition processes. The effects of the total pressure, the gases flow ratio, and the influence of VHF power have been intensively investigated to gain device-quality materials. Finally, a number of fabrication techniques and electrical testing were employed in order to realise high-performance thin film transistors with the optimised materials.

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Hodgkinson, John L. "Atmospheric pressure glow discharge plasma enhanced chemical vapour deposition of titania and aluminium based thin films." Thesis, University of Salford, 2009. http://usir.salford.ac.uk/26717/.

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Atmospheric pressure glow discharge (APGD) plasma CVD was used to deposit thin films of titania at 200 °C using two different precursors. The resulting films were characterised using techniques including XPS, RBS and XRD. It was established that annealing at temperatures as low as 275 °C produced crystalline films that were photocatalytically active. When annealed at 300 °C, the photoactivity was greater than that of a commercially available "self-cleaning" titania film. The effects of the different precursors, annealing times and temperatures on the crystallinity and photoactivity are discussed. This thesis also describes first reported deposition of aluminium oxide thin films by APGD, plasma-enhanced CVD. This approach allows deposition at substantially lower substrate temperatures than normally used in atmospheric pressure based processing. The films are analysed by SEM, XPS, RBS, XRD, and optical properties. It is demonstrated that the APGD approach yields films which are essentially smooth, conformal and free from pinholes or other imperfections. Further novel work was undertaken exploring the deposition of composite metal/ metal oxide thin films using APGD CVD. The described approach employs a parallel- plate dielectric barrier configuration, and the deposition of such materials is discussed with respect to their influence on discharge conditions. Controlled and variable composition films were produced based on aluminium which showed metallic-like reflection (up to 60% visible), and were conductive (~1 O per square). The films were analysed by RBS, SEM, AFM and optical spectroscopy. This new class of APGD-CVD derived thin film material, when combined with the associated low thermal load and attractions for industrial scaling, offers significant potential for new applications. The studies resulted in three full papers, and four posters.

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Arias, Luis Duque. "Functional thin films deposited by plasma enhanced chemical vapour deposition and their applications as antimicrobial coatings." Thesis, University of Bath, 2010. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.538114.

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Spillmann, Adrian. "Flowability modification of fine powders by plasma enhanced chemical vapor deposition /." Zürich : ETH, 2008. http://e-collection.ethbib.ethz.ch/show?type=diss&nr=17927.

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Xiao, Zhigang. "Synthesis of Functional Multilayer Coatings by Plasma Enhanced Chemical Vapor Deposition." Cincinnati, Ohio : University of Cincinnati, 2004. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=ucin1081456822.

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Chung, Yong-Sun. "In-situ deposition of YBa₂Cu₃O₇₋x superconducting films by aerosol decomposition in a plasma enhanced chemical vapor deposition reactor." Diss., Georgia Institute of Technology, 1992. http://hdl.handle.net/1853/20024.

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Limb, Scott J. (Scott Jong Ho). "Pulsed plasma enhanced and pyrolytic chemical vapor deposition of fluorocarbon biopassivation coatings." Thesis, Massachusetts Institute of Technology, 1997. http://hdl.handle.net/1721.1/10412.

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Sharma, Rajan. "Deposition of gate quality dielectrics for Si/Si-Ge heterostructure devices using remote plasma chemical vapor deposition /." Digital version accessible at:, 1999. http://wwwlib.umi.com/cr/utexas/main.

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Schmidt, Marek E. "Plasma enhanced chemical vapor deposition of nanocrystalline graphene and device fabrication development." Thesis, University of Southampton, 2012. https://eprints.soton.ac.uk/347493/.

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Large area growth of high quality graphene remains a challenge, and is currently dominated by chemical vapor deposition (CVD) on metal catalyst films. This method requires a transfer of the graphene onto an insulating substrate for electronic applications, and the graphene film quality and performance can vary with the transfer. A more attractive approach is plasma enhanced chemical vapor deposition (PECVD) of graphene and nanocrystalline graphene (NCG) directly on insulating substrates. The aim of this project was to explore the deposition process and microfabrication processes based on these NCG films. A deposition process for nanocrystalline graphene was developed in this work based on parallel-plate PECVD. NCG with thicknesses between 3 and 35nm were deposited directly on wet thermal oxidized silicon wafers with diameter of 150 mm, quartz glass and sapphire glass. High NCG thickness uniformities of 87% over full wafer were achieved. Surface roughness was measured by atomic force microscopy and shows root mean square (RMS) values of less than 0.23nm for 3nm thin films. NCG films deposited on quartz and sapphire show promising performance as transparent conductor with 13kΩ/X sheet resistance at 85% transparency. Furthermore, the suitability of the developed PECVD NCG films for microfabrication was demonstrated. Microfabrication process development was focused on four device types. NCG membranes were fabricated based on through-wafer inductively coupled plasma etching from the back, and consecutive membrane release by HF vapor etching. The fabrication of suspended NCG strips, based on HF vapor release, shows promising results, but was not entirely successful due to insufficient thickness of the sacrificial oxide. Top gated NCG strips are successfully fabricated, and the increased modulation by the top gate is demonstrated. Finally, NCG nanowire fabrication is performed on 150mm wafers. Experiments yielded an increased back gate modulation effect by a reduced NCG thickness, although no nanowire formation was observed. A highly accurate focused ion beam (FIB) prototyping technique was developed and applied to exfoliated graphene in this work. This technique systematically avoids any exposure of the graphene to Ga+-ions through the use of an alignment marker system, achieving alignment accuracies better than 250 nm. Contacts were deposited by FIB- or e-beam-assisted tungsten deposition, and FIB trench milling was used to confine conduction to a narrow channel. A channel passivation method based on e-beam-assisted insulator deposition has been demonstrated, and showed a reduction of ion damage to the graphene. Three fabricated transistor structures were electrically characterized.

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Peri, Someswara Rao. "Interface Structure of Photonic Films Created by Plasma Enhanced Chemical Vapor Deposition." University of Akron / OhioLINK, 2010. http://rave.ohiolink.edu/etdc/view?acc_num=akron1271687789.

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Jehanathan, Neerushana. "Thermal stability of plasma enhanced chemical vapor deposited silicon nitride thin films." University of Western Australia. School of Mechanical Engineering, 2007. http://theses.library.uwa.edu.au/adt-WU2007.0069.

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[Truncated abstract] This study investigates the thermal stability of Plasma Enhanced Chemical Vapor Deposited (PECVD) silicon nitride thin films. Effects of heat-treatment in air on the chemical composition, atomic bonding structure, crystallinity, mechanical properties, morphological and physical integrity are investigated. The chemical composition, bonding structures and crystallinity are studied by means of X-ray Photoelectron Spectroscopy (XPS), Fourier Transform Infrared (FTIR) Spectroscopy and Transmission Electron Microscopy (TEM). The mechanical properties, such as hardness and Young’s modulus, are determined by means of nanoindentation. The morphological and physical integrity are analyzed using Scanning Electron Microscopy (SEM) . . . The Young’s modulus (E) and hardness (H) of the film deposited at 448 K were measured to have E=121±1.8 GPa and H=11.7±0.25 GPa. The film deposited at 573 K has E=150±3.6 GPa and H=14.7±0.6 GPa. For the film deposited at 573 K, the Young’s modulus is not affected by heating up to 1148 K. Heating at 1373 K caused significant increase in Young’s modulus to 180∼199 GPa. This is attributed to the crystallization of the film. For the film deposited at 448 K, the Young’s modulus showed a moderate increase, by ∼10%, after heating to above 673 K. This is consistent with the much lower level of crystallization in this film as compared to the film deposited at 573 K. In summary, low temperature deposited PECVD SiNx films are chemically and structurally unstable when heated in air to above 673 K. The main changes include oxidation to SiO2, crystallization of Si3N4 and physical cracking. The film deposited at 573 K is more stable and damage and oxidation resistant than the film deposited at 448 K.

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Freeman, Mathieu Jon. "Synthesizing diamond films from low pressure chemical vapor deposition /." Online version of thesis, 1990. http://hdl.handle.net/1850/11262.

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Lama, Lara, and Axel Nordström. "Photoluminescense and AFM characterization of silicon nanocrystals prepared by low-temperature plasma enhanced chemical vapour deposition and annealing." Thesis, KTH, Teoretisk fysik, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-104057.

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When studying quantum dots one of the most important properties is the size of the band gap, and thus also their physical dimensions. We investigated these properties for silicon quantum dots created by means of plasma-enhanced chemical vapour deposition and annealing. To determine the band gap size we measured photoluminescence for ten dierent samples and to determine the physical dimensions we used an atomic force microscope. The photoluminescence measurements indicated that the intensity of the emitted photons varied across the samples, but did not indicate any shift in peak wavelength between samples nor any time-dependence of the luminescence. The peak wavelength was in the order of 600 to 620 nm, corresponding to a band gap of 2.0 to 2.1 eV and a physical size of approximately 3 nm. The AFM scans revealed densely packed quantum dots, where few single objects could be distinguished. In order to be able to perform a better statistical analysis, eorts would have to be taken to separate the quantum dots.

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Summers, Scott. "Production of polycrystalline silicon thin films on foreign substrates using electron cyclotron resonance plasma enhanced chemical vapour deposition." Thesis, London South Bank University, 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.288177.

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The wide spread adoption of solar photovoltaic cells is impeded by a number of factors, the primary one of which is the cost. The technology behind the most used cells today is based on bulk single crystalline silicon wafers. These wafers subsequently undergo numerous processesto produce a finished module capableo f delivering usable direct current electricity. Even with all these processes, the single biggest contributor to production costs is the starting wafer - estimated to account for some 50% of manufacturing costs. Removing these costs by replacing the wafer is the leading topic in solar cell research today. Glass is the most convenient starting point for replacing silicon wafers - it is benign, both from an environmental and manufacturing viewpoint, and is considerably less expensive than silicon wafers for a given quantity. As an amorphous material, glass is well suited to acting as a substrate for amorphous silicon layers used in low cost cells. Amorphous silicon cells suffer from stability issues and can degrade in performance substantially over the operational lifetime of the solar cell. To overcomethese problems the amorphous silicon can be replaced with crystalline silicon material. Generally, the deposition of suitable crystalline material occurs at a temperature in excess of the softening point of glass. So however useful glass is as a substrate it is incompatible with simple, low temperature formation of crystalline silicon using most techniques. There are two outstanding issues relating to the manufacture of thin film silicon solar cells that have been researched for this thesis. One is the deposition of silicon layers at a growth rate high enough to allow for a reasonable throughput of material. The second is the production of material suited to the task i.e. structurally and electrically. In this thesis the direct deposition of high quality polycrystalline silicon( near-single orientation with suitable electrical characteristics) using electron cyclotron resonance plasma enhanced chemical vapour deposition(E CR PECVD) onto glass is demonstrated. A new visualisation of the magnetic field used in E R PECVD has given an insight into the optimisation of the deposition process using this technique. By adjusting the magnetic field appropriately, an increase in growth rate for deposition of polycrystalline silicon of 2- 25 times that reported in the literature was found. In addition to the characterisation of the deposited material, the process parameters have been fully investigated by analysing the process plasma characteristics using a Langmuir probe. An amorphous incubation layer 1 micron thick is seen when the polycrystalline material is deposited directly on glass, however this layer can be substantially reduced by depositing on a thin layer of silicon (on the glass) which has been crystallised by excimer laser irradiation. This indicatesa possible direction in combining these two approaches in future manufacturing processes for the growth of low-temperature polycrystalline silicon layers on glass to form photovoltaic devices.

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Kaouk, Ali [Verfasser]. "Plasma Enhanced Chemical Vapour Deposition of Graphene-Hematite Nanocomposite Films as Photoanodes in Water-Splitting Reactions / Ali Kaouk." München : Verlag Dr. Hut, 2016. http://d-nb.info/1100967753/34.

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Hellwig, Thomas. "Physical, electrochemical and mechanical characterisation of amorphous boron phosphide coatings prepared by plasma enhanced chemical vapour deposition (PECVD)." Thesis, University of the West of Scotland, 2010. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.545797.

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Whilst substantial empirical experimental investigation is available in the literature on amorphous Boron phosphide (BP) coatings, there is not much information about the scienti¯c properties exhibited by this material in var- ious applications such as in infra-red imaging systems. Also a great deal of the industrial application of amorphous BP coatings is in the area of infra- red imaging systems. This thesis is based on an attempt to understand the underpinning scienti¯c basis for the properties of amorphous Boron phos- phide coatings, using a range of surface, chemical, physical, electrochemical, computational (quantum mechanics) and mechanical characterisation tools. The results of this investigation has not only helped in unveiling the scien- ti¯c basis of some of the current empirically derived properties of amorphous BP coatings, used in the infra-red imaging industry, but has con¯rmed that amorphous BP is a potential coating for engineering substrates used in var- ious industries if the PECVD deposition process is optimised. This inves- tigation also establishes the link between the properties of amorphous BP coatings and the bonds in the different stoichiometric composition of the coatings.

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Labelle, Catherine B. 1972. "Pulsed plasma enhanced chemical vapor deposition of fluorocarbon thin films for dielectric applications." Thesis, Massachusetts Institute of Technology, 1999. http://hdl.handle.net/1721.1/85358.

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Chakravarthy, Pramod. "Silicon carbide coatings by plasma-enhanced chemical vapor deposition on silicon and polyimide substrates." Ohio : Ohio University, 1995. http://www.ohiolink.edu/etd/view.cgi?ohiou1179519920.

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29

Carbaugh, Daniel J. "Growth and Characterization of Silicon-Based Dielectrics using Plasma Enhanced Chemical Vapor Deposition." Ohio University / OhioLINK, 2014. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1406644891.

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30

Yu, Qingsong. "Plasma deposition and treatment by a low temperature cascade arc torch /." free to MU campus, to others for purchase, 1998. http://wwwlib.umi.com/cr/mo/fullcit?p9904876.

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31

QI, YU. "THE APPLICATION OF PULSE MODULATED PLASMA TO THE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION OF DIELECTRIC MATERIALS." University of Cincinnati / OhioLINK, 2005. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1115603610.

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32

Wang, Zhen Hua. "The application of parallel light detection to plasma deposition processes." Thesis, The University of Sydney, 1993. https://hdl.handle.net/2123/26606.

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This thesis is concerned with the application of parallel light detection to a variety of physical processes, many of which are plasma processes. Parallel light detection is carried out using an optical multichannel analyser (OMA) coupled with a 1024channel photodiode array detector, and a spectrograph if the spectral information is required. The plasma processes investigated include a planar DC sputtering deposition system, a cathodic titanium vacuum arc and a magnetic solenoid ﬁltered vacuum arc deposition system. An application of the optical multichannel analyser in spectrophotometry is presented. Because of parallel detection of light the OMA-base d spectrophotometer is able to collect optical reflectance and transmittance data at a rate of up to 1024 samples in 17 ms compared with a commercial spectrophotometer which normally has the highest useable rate of 10 samples per second. Using parallel light detection an in—situ monitoring system is set up on a planar DC sputtering deposition system. A number of metal thin films Cu, Ag and Au are produced and their reﬂectance and transmittance are measured in-situ. It is shown the percolation thickness of silver film produced by sputtering is about 4.7 nm. The optical constants of these films at thicknesses ranging from discrete island form to tens of nanometres are derived from the in-situ measured data using an inverse analysis technique. The light emission from the cathode spot of a titanium vacuum arc is studied using Fizeau interferometry combined with the OMA. The temperatures of neutrals and ions in the cathode spot are determined from Doppler broadening of the emission lines. Temperatures of -3x 105K and 3.5x 104K are assigned for titanium ions and titanium atoms present in the cathode spot respectively. The light emission from a vacuum arc deposition system which has a curved magnetic solenoid between the vacuum arc chamber and the deposition chamber is also studied. The light is detected in the region near the substrate so the effect of magnetic field, ambient gases and substrate bias to the film deposition can be investigated. It is shown that the curved magnetic solenoid effectively removes the neutral species. The introduction of substrate increases the neutral emission due to resputtering of the coated substrate. The ambient gases increase ion emission as a function of their atomic weight, and the substrate bias also increases the ion emission. Defects of optical fibres are studied by cathodoluminescence spectroscopy using the OMA and an electron microscope. The cathodoluminescence spectra obtained for various optical fibre preform samples exhibit a number of defect centres GeE', SiE' and drawing induced defects (DID). It is shown the codopant phosphorus decreases the E' defects and DID while codopants boron and fluorine decreases the DID. It is also shown the oxygen-deficient deposition enhances the GeE' centres. Finally, the optical properties of a Bicron wavelength shifting panel (BC-480) is studied using parallel light detection technique. The quantum efficiency of the panel is found for six incident UV radiation of different wavelengths. This data is crucial in studies into solar neutrinos in high energy particle physics. They range from 43% at 365 nm to 1.5% at 254 nm.

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33

Leeds, Stuart M. "Characterisation of the gas-phase environment in a microwave plasma enhanced diamond chemical vapour deposition reactor using molecular beam mass spectrometry." Thesis, University of Bristol, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.297978.

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34

Lin, Xiaorong. "The use of plasma-generated silicon dioxide-like coatings as charge storage media for electrets /." Online version of thesis, 1993. http://hdl.handle.net/1850/11450.

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35

Lapp, Steffen. "Characterisation and optimisation of a hollow-cathode plasma-enhanced chemical vapour deposition process for diamond-like carbon interior pipe coating." Thesis, University of the West of Scotland, 2015. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.731774.

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36

Gulas, Michal. "Growth of carbon nanotubes by plasma enhanced hot filament catalytic chemical vapour deposition : Correlation between gas phase and substrate surface." Université Louis Pasteur (Strasbourg) (1971-2008), 2008. http://www.theses.fr/2008STR13144.

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37

Gupta, Atul. "Surface reactions during plasma enhanced chemical vapor deposition of silicon and silicon based dielectrics." NCSU, 2001. http://www.lib.ncsu.edu/theses/available/etd-20011031-122441.

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Theoretical ab-initio calculations (including both the Configuration Interaction and Density Functional approaches) are used to describe some of the critical surface reactions during plasma enhanced chemical vapor deposition of amorphous and micro-crystalline silicon films. The energetics as well as the reaction mechanism are calculated for the abstraction of surface hydrogen by incident silyl and hydrogen radicals. Another important reaction involving the insertion of these radicals (silyl and hydrogen) into strained Si-Si bonds on the surface is also evaluated. Experiments involve surface topology evolution studies of plasma deposited a-Si:H films using atomic force microscopy (AFM) as well as structural and electrical characterization of silicon dioxide films using several techniques including infrared spectroscopy, ellipsometry, and current-voltage measurements. A predictive kinetic model to describe the growth of silicon films from a predominantly silyl radical flux is developed to explain experimental observations regarding the properties of plasma deposited amorphous silicon films. The model explains diffusion length enhancements under certain processing conditions as well as lays a foundation for understanding the Si-Si network formation during the deposition of a-Si films.

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38

Spooner, Marc. "The application and limitations of PECVD for silicon-based photonics /." View thesis entry in Australian Digital Program, 2005. http://thesis.anu.edu.au/public/adt-ANU20070315.043442/index.html.

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39

Han, Seung Soo. "Modeling and optimization of plasma-enhanced chemical vapor deposition using neural networks and genetic algorithms." Diss., Georgia Institute of Technology, 1996. http://hdl.handle.net/1853/14904.

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40

Jönsson, Martin. "Investigations of plasma-enhanced CVD growth of carbon nanotubes and potential applications /." Göteborg : Göteborg University, 2007. http://www.loc.gov/catdir/toc/fy1001/2007413998.html.

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41

Vaswani, Sudeep. "Surface modification of paper and cellulose using plasma enhanced chemical vapor deposition employing fluorocarbon precursors." Diss., Available online, Georgia Institute of Technology, 2005, 2005. http://etd.gatech.edu/theses/available/etd-01142005-123052/.

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Thesis (Ph. D.)--Chemical Engineering, Georgia Institute of Technology, 2005.
Bidstrup Allen, Sue Ann, Committee Member ; Ludovice, Peter, Committee Member ; Hess, Dennis, Committee Chair ; Henderson, Clifford, Committee Member ; Patterson, Timothy, Committee Member.

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42

Bulkin, Pavel Victorovich. "Electron cyclotron resonance plasma enhanced chemical vapour deposition of sioxny : optical properties and applications." Thesis, 2014. http://hdl.handle.net/10210/9996.

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43

Lin, Jui-Ching, and 林瑞青. "Plasma Enhanced Chemical Vapor Deposition of Titanium Nitride Thin Films." Thesis, 1998. http://ndltd.ncl.edu.tw/handle/95513029960525599683.

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碩士
國立成功大學
材料科學(工程)學系
86
Titanium nitride (TiN) films were prepared by radio- frequency (RF) capacitively coupled plasma-enhanced chemical vapor deposition (PECVD) using TiCl4 and NH3 as precursors. By varying the flow rate of the precursors, substrate temperature, RF power and chamber pressure, the film characteristics, such as deposition rate, elemental concentration, resistivity and surface morphology are investigated by -step, Auger electron spectroscopy, four-point probe and scanning electron microscopy for the films, respectively. With TiCl4/NH3 flow rate ratio of 40/1.5 and chamber pressure of 0.3Torr, oxygen concentratio of the TiN films decreases from 30at% to 7at% and N/Ti atomic ratio increases from 0.78 to 1.15 as the RF power increases from 50W to 150W. In consistency with the reduction of the oxygen concentration, the film resistivity decreases as the RF power increases. The lowest film resistivity is 131-cm, which is obtained from the film deposited at 450℃ and with RF power of 150W. No carbon and chlorine singnal is detected by Auger electron spectroscopy. The content of the two elements in the TiN films is under the detection limit.

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44

Hou, Wen-chi, and 侯文棋. "Growth of GaN Nanowires by Plasma-Enhanced Chemical Vapor Deposition." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/84698555689606661883.

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博士
國立成功大學
化學工程學系碩博士班
97
Gallium nitride (GaN) is a wide band-gap semiconductor with important applications for the development of UV/blue light emitting diode, or laser diode. Recent developments in the fabrication, measurements, and the assembly of semiconductor nanowires have initiated an exciting research field in science and technology. GaN nanowires have been regarded as a potential building block for nanoscale electronics and optoelectronic devices since they possess the unique optical and electronic properties from the one-dimensional geometry. However, there are still many essential scientific issues regarding the control over the growth, interface phenomena, and growth mechanism. Understanding and controlling the growth of nanowires play a crucial role in the further applications. In this thesis, we present the initial work on materials synthesis, characterization and controlling growth to address these important issues. First of all, a novel fabrication method for GaN nanowires by introducing N2 plasma using dielectric barrier discharge (DBD) in a horizontal furnace is successfully developed. This system combines the advantages of plasma-assisted MBE and high temperature furnace for growing GaN nanowires. The growths of single crystal GaN nanowires along the [10-10] direction are observed to follow the vapor-liquid-solid (VLS) growth mechanism using Au as catalyst. The diameters of GaN nanowires range from 70–100 nm and their lengths are up to several micrometers. The PL spectra of the GaN nanowires consisted of mainly a strong band-to-band emission peak at 355 nm without defect-related luminescence at room temperature, indicating the high quality of nanowire crystallites. This is the first successful attempt to introduce stable DBD-type N2 plasma into a horizontal furnace system and demonstrated that the plasma can supply sufficient active nitrogen species to grow high-quality GaN nanowires. The investigations also show the growth and nucleation mechanism of highly vertically-aligned GaN nanowires on a c-plane GaN substrate. A homoepitaxy interface between nanowires and substrate are observed under the appropriate conditions. The results show that the lower growth rate during the nucleation stage is required for the homoepitaxy. After the successful synthesis of high-quality GaN nanowires, we investigate the growth of GaN nanowires by controlling the surface diffusion of Ga species on sapphire in the plasma-enhanced chemical vapor deposition (CVD) system. Under nitrogen-rich growth conditions, Ga has a tendency to adsorb on the substrate surface diffusing to nanowires to contribute to their growth. The nanowires adjacent to the large surface-diffusion spacing obtain up to 70% of their incorporated gallium from surface diffusion under nitrogen-rich conditions. The growth rates of nanowires are strongly dependent on the surface-diffusion spacing under nitrogen-rich conditions. It is found that the addition of 5% hydrogen in nitrogen plasma instantly diminishes the surface diffusion effect under nitrogen-rich conditions. This effect is attributed to the conversion of gallium to gallium hydride at the growth temperature, which has a lower affinity for the sapphire substrate, thereby desorbing easily from the surface and reducing the diffusion length so that the gas phase reaction dominates the growth over the surface diffusion. On the other hand, under gallium-rich growth conditions, nanowire growth is shown to be dominated by the gas phase deposition with negligible contribution from surface diffusion. Compared to the nitrogen supply, the over supply of gallium reactant from gas phase results in the nitrogen species to be the rate determining reactant under the gallium-rich conditions. In the final section of this thesis, the investigations are focused on the Au migration in the Au-assisted growth of GaN nanowires by controlling the gallium partial pressure during growth. The composition of gallium, ranging from 1 to 35 atom%, in the Au-Ga alloy seeds of the nanowires depends on the gallium partial pressures in the plasma-enhanced chemical vapor deposition system. We proposed that a higher excess energy above the melting energy of the Au-Ga seed, which is dependent on the gallium composition, will increase the instability of the top-seed and dramatically increase the detaching rate of catalyst at the growth temperature. Besides, the gallium atoms adsorbed on the sidewalls of nanowires, also dependent on the gallium partial pressures, may act as a surfactant to help the migration of Au atoms. In addition to the vapor-liquid-solid (VLS) growth process observed, the growth of GaN nanowires via the vapor-solid-solid (VSS) process is also observed and reported for the first time, with the detachment of solid Au seeds dramatically inhibited during growth. The migration of Au seed is evidenced by observing, at low gallium partial pressure, the Au-Ga nanoparticles on the sidewalls of nanowires and the catalyzed GaN nanowire branches.

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45

Jazizadeh, Karimi Behzad. "Stoichiometric Hydrogenated Amorphous Silicon Carbide Thin Film Synthesis Using DC-saddle Plasma Enhanced Chemical Vapour Deposition." Thesis, 2013. http://hdl.handle.net/1807/35617.

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Abstract Silicon carbide is a versatile material amenable to variety of applications from electrical insulation to surface passivation, diffusion-barrier in optoelectronic and high-frequency devices. This research presents a fundamental study of a-SiC:H films with variable stoichiometries deposited using novel technique, DC saddle-field plasma-enhanced chemical-vapour deposition, a departure from conventional RF PECVD commonly used in industry. DCSF PECVD is an alternative technique for low temperature large area deposition. Stoichiometric a-SiC:H obtained by fine-tuning precursor gas mixture. Annealing up to 800oC showed no significant change in elemental composition; particularly indicating thermal stability at stoichiometry. Ellipsometry showed wide range of optical gaps whose maximum surpasses values reported in literature. Refractive index measured and change in values studied as function of increasing carbon content in the films. Also attainment of very smooth surface morphology for stoichiometric a-SiC:H films reported. Surface roughness of 1 nm rms demonstrated for films grown at temperature as low as 225oC.

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46

Jaeger, Robert. "Optimierung eines Plasma-enhanced chemical vapour deposition-Systems zur Entwicklung von Targets für Laser-Ionen-Experimente." Phd thesis, 2019. https://tuprints.ulb.tu-darmstadt.de/8808/1/Dissertation_RJaeger_FINAL.pdf.

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Im Rahmen der vorliegenden Arbeit, die in der AG Laser- und Plasmaphysik des Instituts für Kernphysik (IKP) der TU Darmstadt durchgeführt wurde, konnte in erster Linie eine bestehende PECVD-Prozessanlage erfolgreich instandgesetzt, modernisiert, optimiert, erweitert und in Betrieb genommen werden. In diesem Zuge wurde auch eine aktualisierte technische Dokumentation erstellt, um beispielsweise eine künftige Erweiterung komfortabel planen und vornehmen zu können. Darüber hinaus wurde die Leistungsfähigkeit dieser Anlage anhand von DLC-Beschichtungen gezeigt, aus denen sich insbesondere deuteriumhaltiges Material (a-C:D) für freitragende dünne Folien herstellen ließ. Für diesen Zweck wurde nicht nur ein geeigneter Plasmaprozess ausgewählt und erprobt, sondern auch das dafür notwendige deuterierte Prozessgas (CD4) im Labormaßstab selbst synthetisiert. Zudem wurden diese Folien in der Weise präpariert, dass sie sich als sog. Targets für Laser-Ionen-Experimente eignen. Im Rahmen einer Experiment-Kampagne konnten zwei solcher deuterierten DLC-Targets erfolgreich erprobt werden. Mit der Prozessanlage „Plasma-Therm SLR-770 ECR“ ist es möglich, eine chemische Dampfphasenabscheidung durchzuführen, die mit Hilfe eines Niederdruckplasmas aktiviert oder unterstützt wird (engl. plasma-enhanced chemical vapour deposition, kurz: PECVD). Dieses PECVD-Verfahren bietet eine vielseitige Methode zur Synthese und Modifikation von dünnen Schichten. Dazu gehört nicht nur die Beschichtung einer Oberfläche, sondern mit der Prozessanlage können auch Plasmaätzprozesse für einen Materialabtrag durchgeführt werden, beispielsweise für eine Strukturierung im Mikrometermaßstab. Daher stellt diese Anlage ein interessantes Instrument zur Herstellung von maßgeschneiderten Targetmaterialien dar, die insbesondere für Experimente mit laserbasierten Plasmen von Interesse sind. Um das vollständige Potential der Anlage nutzen zu können, wurde sie unter anderem umfangreich modernisiert. Für die Modernisierung der PECVD-Prozessanlage „Plasma-Therm SLR-770 ECR“ wurde das Vakuumsystem zunächst überprüft und generalüberholt. Das separate Vakuumsystem für die Ladeschleuse wurde dabei erweitert, so dass unter anderem ein rasches Be- und Entladen von Substraten zur Prozesskammer möglich ist. Das Vakuumsystem für die Prozesskammer wurde umfangreich generalüberholt und durch relevante Komponenten ergänzt. Das elektrische Steuerungs- und Überwachungssystem der Anlage wurde vollständig durch ein „Retrofit“ ersetzt, das eigenständig geplant, entwickelt, aufgebaut und schließlich erfolgreich in Betrieb genommen wurde. Die dazugehörige Bediensoftware wurde in der Programmierumgebung NI LabVIEW(TM) erstellt und dabei auch um Funktionen erweitert, die in dem ursprünglichen System nicht vorhanden waren. Der Programmcode dieser sog. PECVD-Applikation wurde ausführlich dokumentiert, so dass daran eine weitere Entwicklung komfortabel anknüpfen kann. Um die Leistungsfähigkeit des PECVD-Systems zu demonstrieren, wurden dünne Schichten aus wasserstoffreichem amorphen Kohlenstoff hergestellt (a-C:H), allgemein auch als DLC bezeichnet (engl. diamond-like carbon). Des Weiteren wurden deuterierte Schichten hergestellt, um sie im Rahmen einer Experiment-Kampagne erproben zu können. Für diesen Zweck wurde eine Methode zur Synthese und Aufbereitung von deuteriertem Methan (CD4) im Labormaßstab entwickelt. Aus den abgeschiedenen Schichten (a-C:D) wurde eine spezielle Präparationsmethode angewandt, um freitragende Targets zu gewinnen. Zur Beurteilung der Plasmaprozesse und hergestellten dünnen Schichten wurden unter anderem Schichtdickenmessungen durchgeführt. Eine chemische Analyse erfolgte explizit für die Schichten aus a-C:D, um den Erfolg der Schichtherstellung zu bestätigen. Abschließend wurden zwei Targets am Hochenergie-Lasersystem PHELIX erfolgreich erprobt, die aus einer dünnen freitragenden Folie des deuterierten Materials bestanden.

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47

Huang, Shun-Shing, and 黃相舜. "Characterization pf Plasma-Enhanced Chemical Vapor Deposition pf TiO2 Thin films." Thesis, 2000. http://ndltd.ncl.edu.tw/handle/08927436610035511502.

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碩士
國立成功大學
材料科學及工程學系
88
Titanium dioxide thin films were fabricated on the silicon substrates using plasma-enhanced chemical vapor deposition (PECVD) and low pressure chemical vapor deposition (LPCVD). The refractive index, crystal structure and surface morphology of the films deposited with various substrate temperatures, rf powers and oxygen flows were investigated. During the deposition, the vapor of Ti-(OC3H7)4 (TTIP) was carried by nitrogen and mixed with oxygen to form TiO2 thin films. The TiO2 films deposited by LPCVD at substrate temperature 400℃ ~ 500℃ show Anatase crystalline structure, but the PECVD TiO2 films are amorphous with substrate temperature of 450℃ ~ 500℃. The PECVD TiO2 film surfaces show fine particles as deposited and the deposition rate was low. Without plasma assistance, the TiO2 surfaces show large crystal grains and the surfaces are rough. By using rf power of 100 W, the refractive indices of PECVD TiO2 films are around 2.45~2.62. The refractive indices are 2.43~2.47 for LPCVD TiO2 films. Therefore, the refractive index of PECVD TiO2 is larger than that of LPCVD TiO2. By varying the oxygen flow rates during deposition, the crystal structures and refractive indices of TiO2 thin films do not change significantly. After annealing at 700℃ and 800℃ in oxygen, the surface roughness of TiO2 films is increased but the refractive index did not change. The dielectric constants of PECVD TiO2 Films deposited with rf power of 100 W and oxygen flows of 100 sccm and 200 sccm were measured using the MIS (Al/TiO2/Si) capacitor structure. We found that the dielectric constant of PECVD TiO2 film deposited at 500℃ is higher than that deposited at 450℃. The highest value is 12.7 and the lowest value is 7.9. Comparing with the literatures, we realize that the values of dielectric constant are quite low. However, the values of refractive index of PECVD TiO2 are suitable for anti-reflection coating applications. Improvement of dielectric properties for PECVD TiO2 shall be further investigated.

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48

謝明燈. "Low temperature silicon epitaxial growth by plasma enhanced chemical vapor deposition." Thesis, 1993. http://ndltd.ncl.edu.tw/handle/52684092564705128377.

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49

Yun-MaoYan and 嚴云懋. "Showerhead Flow Field Simulation for Plasma Enhanced Chemical Vapor Deposition Process." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/56189778069863451020.

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碩士
國立成功大學
機械工程學系碩博士班
98
With the rapid progress in microelectronics industrial development and the trend rate, the study of process technology the more important, the use of simulations to improve facilities, reduce costs and time spent in the semiconductor manufacturing process for plasma enhanced chemical vapor deposition is an important device, this study used the numerical method of plasma enhanced chemical vapor deposition (PECVD) deposition, the reactor flow field phenomenon, the numerical simulation method, described in PECVD reactor flow governing transport phenomena equation. In this study, PECVD technology on a single wafer type reactor flow distribution analysis and comparison of various geometrical shapes of showerhead, the flow field uniformity of the reaction in with the cold wall reactor chamber body flow fields, assuming a 2-dimensional space, and the flow field of the board, and finally, the showerhead match into porous media, to identify its permeability and drag coefficient, making it the equivalent flow in order to future computing three-dimensional flow field can reduce the number of grid computing, and more close to reality.

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50

Wu, Hui-Ling, and 吳慧玲. "Fabrication of SiOX Barrier Coatings Using Plasma Enhanced Chemical Vapor Deposition." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/66693842407997078394.

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碩士
中原大學
化學工程研究所
94
Organic light-emitting diode (OLED) displays require perfect encapsulation against inward permeation of water and oxygen. In order to reduce the rate of permeation of vapors through OLED devices, a barrier layer is needed. SiOX film is a potential candidate for OLED encapsulation. This study focus on the water permeability of SiOX thin film deposited on PET by plasma enhanced chemical vapor deposition from hexamethyldisiloxane (HMDSO) with oxygen. It was found that the desired dense film was obtained under low HMDSO flow rate, high oxygen concentration, high RF power and low chamber pressure condition. It was also found that the Water Vapor Transmission Rate (WVTR) of bare PET film is 33.02 g/m2-day when measured at 600C, 95%RH and 48 hours. Under optimum condition, the WVTR of SiOX barrier films decreased to a value of 5.01 g/m2-day.

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Dissertations / Theses on the topic 'Plasma Enhanced Chemical Vapour deposition'

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