Relevant bibliographies by topics / Plasma Enhanced Physical Vapor Deposition (PEPVD)

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers

Academic literature on the topic 'Plasma Enhanced Physical Vapor Deposition (PEPVD)'

Author: Grafiati
Published: 4 June 2021
Last updated: 15 February 2022

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Journal articles on the topic "Plasma Enhanced Physical Vapor Deposition (PEPVD)"

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Bhushan, Bharat, Andrew J. Kellock, Nam-Hee Cho, and Joel W. Ager. "Characterization of chemical bonding and physical characteristics of diamond-like amorphous carbon and diamond films." Journal of Materials Research 7, no. 2 (February 1992): 404–10. http://dx.doi.org/10.1557/jmr.1992.0404.

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Diamond-like (amorphous) carbon (DLC) films were prepared by dc magnetron sputtering and plasma enhanced chemical vapor deposition (PECVD) and diamond films were prepared by microwave plasma enhanced chemical vapor deposition (MPECVD). For the first time, chemical and mechanical characterization of the films from each category are carried out systematically and a comparison of the chemical and physical properties is provided. We find that DLC coatings produced by PECVD are superior in microhardness and modulus of elasticity to those produced by sputtering. PECVD films contain a larger fraction of sp3-bonding than the sputtered hydrogenated carbon films. Chemical and physical properties of the diamond films appear to be close to those of bulk diamond.
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SAMPATH KUMAR, T., A. VINOTH JEBARAJ, K. SIVAKUMAR, E. SHANKAR, and N. TAMILOLI. "CHARACTERIZATION OF TiCN COATING SYNTHESIZED BY THE PLASMA ENHANCED PHYSICAL VAPOUR DEPOSITION PROCESS ON A CEMENTED CARBIDE TOOL." Surface Review and Letters 25, no. 08 (December 2018): 1950028. http://dx.doi.org/10.1142/s0218625x19500288.

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In the present investigation, Titanium Carbonitride (TiCN) coating was deposited on a cemented carbide substrate, by means of Plasma Enhanced Physical Vapour Deposition (PEPVD) process. The microstructure of the deposited film was characterized using the Scanning Electron Microscope (SEM). Highly dense, less porous and uniformly distributed TiCN coating was observed on the coated surface. X-Ray diffraction analysis was carried out to access the phases present in the coated layer. The scratch resistance and hardness were measured using the scratch tester and Nanoindenter, respectively. The TiCN coating gives higher hardness and superior scratch resistance when compared to the substrate. The surface morphology of the coated film was characterized using the Atomic Force Microscope (AFM) and was found that the surface roughness was lesser for TiCN coating when compared to cemented carbide substrate. The intensified TiCN coating on the substrate will be useful in improving the surface behavior of cemented carbide cutting tool.
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Lee, Won Jun, Min Ho Chun, Kwang Su Cheong, Kwang Chol Park, Chong Ook Park, Guo Zhong Cao, and Sa Kyun Rha. "Characteristics of SiO2 Film Grown by Atomic Layer Deposition as the Gate Insulator of Low-Temperature Polysilicon Thin-Film Transistors." Solid State Phenomena 124-126 (June 2007): 247–50. http://dx.doi.org/10.4028/www.scientific.net/ssp.124-126.247.

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SiO2 films were prepared by atomic layer deposition (ALD) technique, and their physical and electrical properties were characterized for being applied as a gate insulator of low-temperature polysilicon thin-film transistors. ALD SiO2 films were deposited at 350–400 oC using alternating exposures of SiH2Cl2 and O3/O2, and the characteristics of the deposited films were improved with increasing deposition temperature. The ALD films deposited at 400 oC exhibited integrity, surface roughness and leakage current better than those of the conventional plasma-enhanced chemical vapor deposition (PECVD) films.
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Wang, Zhi Jian, and Xiao Feng Shang. "The Simulation of Polycrystalline Silicon Thin Film Deposition in PECVD System." Advanced Materials Research 189-193 (February 2011): 2032–36. http://dx.doi.org/10.4028/www.scientific.net/amr.189-193.2032.

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Taking Silicon tetrachloride (SiCl4) and hydrogen (H2) as the reaction gas, by the method of plasma-enhanced chemical vapor deposition (PECVD), this paper simulates the deposition process of polycrystalline silicon thin film on the glass substrates in the software FLUENT. Three dimensional physical model and mathematics model of the simulated area are established. The reaction mechanism including main reaction equation and several side equations is given during the simulation process. The simulation results predict the velocity field, temperature distribution, and concentration profiles in the PECVD reactor. The simulation results show that the deposition rate of silicon distribution is even along the circumference direction, and gradually reduced along the radius direction. The deposition rate is about 0.005kg/(m2•s) at the center. The simulated result is basically consistent with the practical one. It means that numerical simulation method to predict deposition process is feasible and the results are reliable in PECVD system.
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Liu, Bangwu, Sihua Zhong, Jinhu Liu, Yang Xia, and Chaobo Li. "Silicon Nitride Film by Inline PECVD for Black Silicon Solar Cells." International Journal of Photoenergy 2012 (2012): 1–5. http://dx.doi.org/10.1155/2012/971093.

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The passivation process is of significant importance to produce high-efficiency black silicon solar cell due to its unique microstructure. The black silicon has been produced by plasma immersion ion implantation (PIII) process. And the Silicon nitride films were deposited by inline plasma-enhanced chemical vapor deposition (PECVD) to be used as the passivation layer for black silicon solar cell. The microstructure and physical properties of silicon nitride films were characterized by scanning electron microscope (SEM), Fourier transform infrared spectroscopy (FTIR), spectroscopic ellipsometry, and the microwave photoconductance decay (μ-PCD) method. With optimizing the PECVD parameters, the conversion efficiency of black silicon solar cell can reach as high as 16.25%.
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Kluska, Stanisława, Elżbieta Pamuła, Stanisława Jonas, and Zbigniew Grzesik. "Surface Modification of Polyetheretherketone by Helium/nitrogen and Nitrous Oxide Plasma Enhanced Chemical Vapour Deposition." High Temperature Materials and Processes 33, no. 2 (April 1, 2014): 147–53. http://dx.doi.org/10.1515/htmp-2013-0022.

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AbstractThe surface of the polyetheretherketone (PEEK) samples was modified by the plasma enhanced chemical vapor deposition (PECVD) in the mixture of He and N2 as well as in the N2O atmosphere. Morphological characterization of the PEEK as well as its surface roughness, chemical structure, and surface free energy were investigated by atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and sessile drop technique, respectively. The highest increase in the polar component of the total surface energy was observed for PEEK modified by He+N2 plasma, which correlated with significant increase in the concentration of oxygen and nitrogen-containing chemical functionalities as revealed by XPS. For PEEK submitted to N2O plasma treatment significant changes in surface topography and increase in roughness were observed, but changes in surface chemistry and surface free energy were mild.
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Jürgensen, Lasse, Michael Frank, David Graf, Isabel Gessner, Thomas Fischer, Katharina Welter, Wolfram Jägermann, and Sanjay Mathur. "Nanostructured IrOx Coatings for Efficient Oxygen Evolution Reactions in PV-EC Setup." Zeitschrift für Physikalische Chemie 234, no. 5 (May 26, 2020): 911–24. http://dx.doi.org/10.1515/zpch-2019-1450.

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AbstractNew heteroleptic iridium compounds exhibiting high volatility and defined thermal decomposition behavior were developed and tested in plasma-enhanced chemical vapor deposition (PECVD). The iridium precursor [(COD)Ir(TFB-TFEA)] (COD = 1,5-cyclooctadiene; TFB-TFEA = N-(4,4,4-Trifluorobut-1-en-3-on)-6,6,6-trifluoroethylamin) unifies both reactivity and sufficient stability through its heteroleptic constitution to offer a step-by-step elimination of ligands to provide high compositional purity in CVD deposits. The substitution of neutral COD ligands against CO groups further increased the volatility of the precursor. PECVD experiments with unambiguously characterized Ir compounds (single crystal X-ray diffraction analysis) demonstrated their suitability for an atom-efficient (high molecule-to-precursor yield) gas phase deposition of amorphous iridium oxide (IrOx) phases. Thin films of IrOx were well suited as electrocatalyst in oxygen evolution reaction so that an efficient coupled system in combination with solar cells is viable to perform water-splitting reaction without external bias.
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Vitiello, J., F. Piallat, and L. Bonnet. "Alternative deposition solution for cost reduction of TSV integration." International Symposium on Microelectronics 2017, no. 1 (October 1, 2017): 000135–39. http://dx.doi.org/10.4071/isom-2017-tp52_034.

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Abstract As one of the key enabler of 3D integration, Through Silicon Via (TSV) was widely investigated but not largely adopted in the advanced packaging industry. At the present time, TSV key films, i.e. isolation, barrier and Cu seed layers, are depending on (Plasma Enhanced) Chemical Vapor Deposition ((PE)CVD) and Physical Vapor Deposition (PVD) systems in high volume manufacturing. Those deposition methods are not able to answer actual TSV needs: thick and conformal layers. They have forced engineers to compensate with other TSV fabrication steps while degrading fabrication cost. The innovative Fast Atomic Sequential Technology (F.A.S.T.®), a unique combination of optimized CVD reactor with Atomic Layer Deposition (ALD) pulsing capability, has been extensively evaluated to answer the thick and conformal layer request of TSV integration scheme while reducing integration cost. Based on commercially available molecules, actual isolation, copper barrier and Cu seed materials can be layered with advantageous conformality in TSV with aspect ratio up to 20:1. Furthermore, extended process window is at reach with the technique, thanks to additional parameters enabling fine tuning of the layer's properties to fit actual needs and future requirements. Assisted by plasma to deposit SiO2 liner, and TiN copper barrier, or combined with reducing gas for Cu seed deposition, highly conformal films compared to PVD or PECVD can be obtained while offering deposition rate much higher than PEALD. Additionally, a unique in-situ cleaning capability was also developed to remove deposition material from the reactor walls in the Cu Seed deposition chamber, thus answering the requirements of high volume manufacturing players.
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Echeverría, Elena, George Peterson, Bin Dong, Simeon Gilbert, Adeola Oyelade, Michael Nastasi, Jeffry A. Kelber, and Peter A. Dowben. "Band Bending at the Gold (Au)/Boron Carbide-Based Semiconductor Interface." Zeitschrift für Physikalische Chemie 232, no. 5-6 (May 24, 2018): 893–905. http://dx.doi.org/10.1515/zpch-2017-1038.

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Abstract We have used X-ray photoemission spectroscopy to study the interaction of gold (Au) with novel boron carbide-based semiconductors grown by plasma-enhanced chemical vapor deposition (PECVD). Both n- and p-type films have been investigated and the PECVD boron carbides are compared to those containing aromatic compounds. In the case of the p-type semiconducting PECVD hydrogenated boron carbide samples, the binding energy of the B(1s) core level shows a shift to higher binding energies as the Au is deposited, an indication of band bending and possibly Schottky barrier formation. In the case of the n-type boron carbide semiconductors the interaction at the interface is more typical of an ohmic contact. Addition of the aromatic compounds increases the change in binding energies on both n-type and p-type PECVD boron carbide semiconductors, and the gold appears to diffuse into the PECVD boron carbides alloyed with aromatic moieties.
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Yan, Bao Jun, Shu Lin Liu, Xiao Wei Liu, and Ting Ting Jiang. "Effect of Hydrogen Dilution Ratio and Substrate Roughness on the Microstructure of Intrinsic Microcrystalline Silicon Thin Films." Advanced Materials Research 936 (June 2014): 202–6. http://dx.doi.org/10.4028/www.scientific.net/amr.936.202.

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Intrinsic microcrystalline silicon (μc-Si:H) thin films were deposited on four kinds of substrates (polished quartz glass: PG, Rough quartz glass: RG, Textured SnO2:F coated glass: TG, Textured ZnO:Al coated glass: ZG) by 13.56 MHz plasma enhanced chemical vapor deposition (PECVD) with different hydrogen dilution ratio (RH=H2/SiH4) under the pressure of 2 Torr. The film thickness, crystalline volume fraction (XC) and substrate surface roughness (Ra) were measured by surface profilometer, Raman spectra and atom force microscopy (AFM), respectively. The results revealed that with the increase of RH, the deposition rate decreased and XC increased monotonously for the films deposited on the same substrate, but the substrate Ra had an obvious impact on the film microstructure. A physical model was proposed to illustrate the growth of the μc-Si:H thin films deposited on substrates with different Ra.
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Dissertations / Theses on the topic "Plasma Enhanced Physical Vapor Deposition (PEPVD)"

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Moore, Kevin Charles. "DEPOSITION OF COATINGS ONTO NANOFIBERS." University of Akron / OhioLINK, 2006. http://rave.ohiolink.edu/etdc/view?acc_num=akron1153749172.

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Hellwig, Thomas. "Physical, electrochemical and mechanical characterisation of amorphous boron phosphide coatings prepared by plasma enhanced chemical vapour deposition (PECVD)." Thesis, University of the West of Scotland, 2010. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.545797.

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Whilst substantial empirical experimental investigation is available in the literature on amorphous Boron phosphide (BP) coatings, there is not much information about the scienti¯c properties exhibited by this material in var- ious applications such as in infra-red imaging systems. Also a great deal of the industrial application of amorphous BP coatings is in the area of infra- red imaging systems. This thesis is based on an attempt to understand the underpinning scienti¯c basis for the properties of amorphous Boron phos- phide coatings, using a range of surface, chemical, physical, electrochemical, computational (quantum mechanics) and mechanical characterisation tools. The results of this investigation has not only helped in unveiling the scien- ti¯c basis of some of the current empirically derived properties of amorphous BP coatings, used in the infra-red imaging industry, but has con¯rmed that amorphous BP is a potential coating for engineering substrates used in var- ious industries if the PECVD deposition process is optimised. This inves- tigation also establishes the link between the properties of amorphous BP coatings and the bonds in the different stoichiometric composition of the coatings.
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Scott, Paul Robert Wieliczka David Michael. "An in situ x-ray photoelectron spectroscopy analysis of thin films created through physical vapor deposition of aluminum and plasma enhanced chemical vapor deposition of trimethylsilane." Diss., UMK access, 2007.

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Thesis (M.S.)--Dept. of Physics. University of Missouri--Kansas City, 2007.
"A thesis in physics." Typescript. Advisor: David M. Wieliczka. Vita. Title from "catalog record" of the print edition Description based on contents viewed May 23, 2008. Includes bibliographical references (leaves 69-70). Online version of the print edition.
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Sel, Kivanc. "The Effects Of Carbon Content On The Properties Of Plasma Deposited Amorphous Silicon Carbide Thin Films." Phd thesis, METU, 2007. http://etd.lib.metu.edu.tr/upload/2/12608292/index.pdf.

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The structure and the energy band gap of hydrogenated amorphous silicon carbide are theoretically revised. In the light of defect pool model, density of states distribution is investigated for various regions of mobility gap. The films are deposited by plasma enhanced chemical vapor deposition system with various gas concentrations at two different, lower (30 mW/cm2) and higher (90 mW/cm2), radio frequency power densities. The elemental composition of hydrogenated amorphous silicon carbide films and relative composition of existing bond types are analyzed by x-ray photoelectron spectroscopy measurements. The thicknesses, deposition rates, refractive indices and optical band gaps of the films are determined by ultraviolet visible transmittance measurements. Uniformity of the deposited films is analyzed along the radial direction of the bottom electrode of the plasma enhanced chemical vapor deposition reactor. The molecular vibration characteristics of the films are reviewed and analyzed by Fourier transform infrared spectroscopy measurements. Electrical characteristics of the films are analyzed by dc conductivity measurements. Conduction mechanisms, such as extended state, nearest neighbor and variable range hopping in tail states are revised. The hopping conductivities are analyzed by considering the density of states distribution in various regions of mobility gap. The experimentally measured activation energies for the films of high carbon content are too low to be interpreted as the difference between Fermi level and relevant band edge. This anomaly has been successfully removed by introducing hopping conduction across localized tail states of the relevant band. In other words, the second contribution lowers the mobility edge towards the Fermi level.
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Hamrick, Paul M. "SIMULATION OF THE CONCENTRATION FIELD DURING PHYSICAL VAPOR DEPOSITION ONTO A NANOFIBER SUBSTRATE." University of Akron / OhioLINK, 2006. http://rave.ohiolink.edu/etdc/view?acc_num=akron1153760702.

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Evans, Ryan David. "Tribological Thin Films on Steel Rolling Element Bearing Surfaces." Case Western Reserve University School of Graduate Studies / OhioLINK, 2006. http://rave.ohiolink.edu/etdc/view?acc_num=case1133365793.

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Segervald, Jonas. "Fabrication and Optimization of a Nanoplasmonic Chip for Diagnostics." Thesis, Umeå universitet, Institutionen för fysik, 2019. http://urn.kb.se/resolve?urn=urn:nbn:se:umu:diva-163998.

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To increase the survival rate from infectious- and noncommunicable diseases, reliable diagnostic during the preliminary stages of a disease onset is of vital importance. This is not trivial to achieve, a highly sensitive and selective detection system is needed for measuring the low concentrations of biomarkers available. One possible route to achieve this is through biosensing based on plasmonic nanostructures, which during the last decade have demonstrated impressive diagnostic capabilities. These nanoplasmonic surfaces have the ability to significantly enhance fluorescence- and Raman signals through localized hotspots, where a stronger then normal electric field is present. By further utilizing a periodic sub-wavelength nanohole array the extraordinary optical transmission phenomena is supported, which open up new ways for miniaturization. In this study a nanoplasmonic chip (NPC) composed of a nanohole array —with lateral size on the order of hundreds of nanometer— covered in a thin layer of gold is created. The nanohole array is fabricated using soft nanoimprint lithography on two resists, hydroxypropyl cellulose (HPC) and polymethyl methacrylate (PMMA). An in depth analysis of the effect of thickness is done, where the transmittance and Raman scattering (using rhodamine 6G) are measured for varying gold layers from 5 to 21 nm. The thickness was proved to be of great importance for optimizing the Raman enhancement, where a maximum was found at 13 nm. The nanohole array were also in general found beneficial for additionally enhancing the Raman signal. A transmittance minima and maxima were found in the region 200-1000 nm for the NPCs, where the minima redshifted as the thickness increased. The extraordinary transmission phenomena was however not observed at these thin gold layers. Oxygen plasma treatment further proved an effective treatment method to reduce the hydrophobic properties of the NPCs. Care needs be taken when using thin layers of gold with a PMMA base, as the PMMA structure could get severely damaged by the plasma. HPC also proved inadequate for this projects purpose, as water-based fluids easily damaged the surface despite a deposited gold layer on top.
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Tsai, Tsung-Chan 1982. "Plasma Enhanced Chemical Vapor Deposition on Living Substrates: Development, Characterization, and Biological Applications." Thesis, 2012. http://hdl.handle.net/1969.1/148233.

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This dissertation proposed the idea of “plasma-enhanced chemical vapor deposition on living substrates (PECVD on living substrates)” to bridge the gap between the thin film deposition technology and the biological and living substrates. This study focuses on the establishment of the knowledge and techniques necessary to perform “PECVD on living substrates” and contains three main aspects: development, characterization, and biological applications. First, a PECVD tool which can operate in ambient air and at low temperature was developed using a helium dielectric barrier discharge jet (DBD jet). It was demonstrated that various materials, such as polymeric, metallic, and composite films, can be readily synthesized through this technique. Second, the PMMA and copper films deposited using DBD jets were characterized. High-rate (22 nm/s), low-temperature (39 ºC) PMMA deposition was achieved and the film surface morphology can be tailored by altering the discharge power. Conductive copper films with an electrical resistivity lower than 1×10-7 ohm-m were obtained through hydrogen reduction. Both PMMA and copper films can be grown on temperature-sensitive substrates, such as plastics, pork skin, and even fingernail. The electrical, optical, and imaging characterization of the DBD jets was also conducted and several new findings were reported. Multiple short-duration current pulses instead of only one broad pulse per half voltage cycle were observed when a dielectric substrate was employed. Each short-duration current pulse is induced by a leading ionization wave followed by the formation of a plasma channel. Precursor addition further changed the temporal sequence of the pulses. An increase in the power led to a mode change from a diffuse DBD jet to a concentrated one. This mode change showed significant dependence on the precursor type, tube size, and electrode configuration. These findings regarding the discharge characteristics can thus facilitate the development of DBD-jet operation strategies to improve the deposition efficacy. Finally, this technique was used to grow PMMA films onto agar to demonstrate one of its potential biological applications: sterile bandage deposition. The DBD jet with the film depositing ability enabled the surface to be not only efficiently sanitized but also protected by a coating from being reached by bacteria.
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"Characterization of Cubic Boron Nitride Interfaces with in situ Photoelectron Spectroscopy." Doctoral diss., 2016. http://hdl.handle.net/2286/R.I.38531.

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abstract: Cubic boron nitride (c-BN) has potential for electronic applications as an electron emitter and serving as a base material for diodes, transistors, etc. However, there has been limited research on c-BN reported, and many of the electronic properties of c-BN and c-BN interfaces have yet to be reported. This dissertation focused on probing thin film c-BN deposited via plasma enhanced chemical vapor deposition (PECVD) with in situ photoelectron spectroscopy (PES). PES measurements were used to characterize the electronic properties of c-BN films and interfaces with vacuum and diamond. First, the interface between c-BN and vacuum were characterized with ultraviolet PES (UPS). UPS measurements indicated that as-deposited c-BN, H2 plasma treated c-BN, and annealed c-BN post H2 plasma treatment exhibited negative electron affinity surfaces. A dipole model suggested dipoles from H-terminated N surface sites were found to be responsible for the NEA surface. Then, Si was introduced into c-BN films to realize n-type doped c-BN. The valence structure and work function of c-BN:Si films were characterized with XPS and UPS measurements. Measurements were unable to confirm n-type character, and it is concluded that silicon nitride formation was the primary effect for the observations. Finally, XPS measurements were employed to measure the band offsets at the c-BN/diamond interface. Measurements indicated the valence band maximum (VBM) of c-BN was positioned ~0.8 eV above the VBM of diamond.
Dissertation/Thesis
Doctoral Dissertation Physics 2016
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Garofano, Vincent. "Diagnostics spectroscopiques de plasmas RF en régime de pulvérisation physique et en présence de générations successives de poussières dans les chimies organosiliciées." Thèse, 2018. http://hdl.handle.net/1866/21759.

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Books on the topic "Plasma Enhanced Physical Vapor Deposition (PEPVD)"

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Y, Pauleau, ed. Materials and processes for surface and interface engineering. Dordrecht: Kluwer Academic Publishers, 1995.

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Brannon, James H., Carol I. H. Asby, and Stella W. Pang. Photons and Low Energy Particles in Surface Processing: Volume 236. University of Cambridge ESOL Examinations, 2014.

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Ashby, Carol H., and James H. Brannon. Photons and Low Energy Particles in Surface Processing: Symposium Held December 3-6, 1991, Boston, Massachusetts, U.S.A. (Materials Research Society Symposium Proceedings). Materials Research Society, 1992.

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Ashby, Carol Iris Hill, 1953-, Brannon James H, and Pang Stella W, eds. Photons and low energy particles in surface processing: Symposium held December 3-6, 1991, Boston, Massachusetts, U.S.A. Pittsburgh, Pa: Materials Research Society, 1992.

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Book chapters on the topic "Plasma Enhanced Physical Vapor Deposition (PEPVD)"

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Tsu, D. V., S. S. Kim, and G. Lucovsky. "Deposition of SiO2 Thin Films by Remote Plasma Enhanced Chemical Vapor Deposition (Remote PECVD)." In The Physics and Chemistry of SiO2 and the Si-SiO2 Interface, 119–27. Boston, MA: Springer US, 1988. http://dx.doi.org/10.1007/978-1-4899-0774-5_13.

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Shahidi, Sheila, Jakub Wiener, and Mahmood Ghoranneviss. "Plasma-Enhanced Vapor Deposition Process for the Modification of Textile Materials." In Plasma Science and Technology - Progress in Physical States and Chemical Reactions. InTech, 2016. http://dx.doi.org/10.5772/62832.

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Conference papers on the topic "Plasma Enhanced Physical Vapor Deposition (PEPVD)"

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Peters, Dethard, and Joerg Mueller. "Integrated optical devices with silicon oxynitride prepared by plasma-enhanced chemical vapor deposition (PECVD) on Si and GaAs substrates." In Physical Concepts of Materials for Novel Optoelectronic Device Applications, edited by Manijeh Razeghi. SPIE, 1991. http://dx.doi.org/10.1117/12.24551.

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Maschmann, Matthew R., Placidus B. Amama, and Timothy S. Fisher. "Effect of DC Bias on Microwave Plasma Enhanced Chemical Vapor Deposition Synthesis of Single-Walled Carbon Nanotubes." In ASME 2005 International Mechanical Engineering Congress and Exposition. ASMEDC, 2005. http://dx.doi.org/10.1115/imece2005-79007.

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The physical properties of carbon nanotubes (CNTs) make them outstanding candidates for introduction into technologies ranging from high resolution flat panel displays to nanoscale transistors. Integration of carbon nanotubes into devices, however, requires precise control over the manufacturing processes used during their synthesis. To meet the specific requirements of a given application, alignment, diameter, length and chirality of carbon nanotubes must be strictly addressed. This work demonstrates the controlled synthesis of single-walled carbon nanotubes (SWCNTs) with low amount of undesired carbonaceous species using plasma enhanced chemical vapor deposition (PECVD). This report elucidates the role of DC bias applied to the growth substrate during synthesis, including the field-enhanced alignment of SWCNTs, selectivity in the diameter distribution and selectivity of semiconducting versus metallic nanotubes. Carbon nanotubes are characterized using Raman spectroscopy and electron microscopy.
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Bleakie, Alexander, and Dragan Djurdjanovic. "Dynamic Feature Monitoring Technique Applied to Thin Film Deposition Processes in an Industrial PECVD Tool." In ASME 2011 International Manufacturing Science and Engineering Conference. ASMEDC, 2011. http://dx.doi.org/10.1115/msec2011-50041.

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In semiconductor fabrication processes, reliable feature extraction and condition monitoring is critical to understanding equipment degradation and implementing the proper maintenance decisions. This paper presents an integrated feature extraction and equipment monitoring approach based on standard built-in sensors from a modern 300mm-technology industrial Plasma Enhanced Chemical Vapor Deposition (PECVD) tool. Linear Discriminant Analysis was utilized to determine the set of dynamic features that are the most sensitive to different tool conditions brought about by chamber cleaning. Gaussian Mixture Models of the dynamic feature distributions were used to statistically quantify changes of these features as the condition of the tool changed. Data was collected in the facilities of a well-known microelectronics manufacturer from a PECVD tool used for depositing various thin films on silicon wafers, which is one of the key steps in semiconductor manufacturing. Dynamic features coming from the radio frequency (RF) plasma power generator, matching capacitors, pedestal temperature, and chamber temperature sensors were shown to consistently have significant statistical changes as a consequence of repeated cleaning cycles, indicating physical connections to the chamber condition.
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Krzhizhanovskaya, Valeria, Denis Ivanov, Yuriy Gorbachev, and Alexander Smirnov. "Multiphysics Multi-Model Simulation of Large-Area Plasma Chemical Reactors." In ASME 2009 International Design Engineering Technical Conferences and Computers and Information in Engineering Conference. ASMEDC, 2009. http://dx.doi.org/10.1115/detc2009-87039.

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Facing an ever-growing demand for large-area solar cells and flat-panel displays, the industry strives to produce larger, cheaper and better performing thin films. Computer simulation has proved to be a reliable and cost-efficient way to optimize existing technologies, to develop and test new ideas. The most widely used technology of thin film production is plasma enhanced chemical vapor deposition (PECVD), which involves multiple physical and chemical processes: electromagnetic wave propagation, plasma-chemical processes (ionization, dissociation, excitation, recombination, attachment, ion bombardment, etc.), convective and diffusive transport, thermal effects, gas-phase chemical reactions, heterogeneous reactions on the surface, and the target process of film growth. The temporal and spatial scales of these processes span many orders of magnitude (from nanoseconds to hours and from Angstrom to meters). Modeling these coupled processes with a fine level of detail and appropriate scale in three dimensions is still out of reach of modern computational resources; and special modeling and simulation approaches are required to meet the challenge [1].
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Krzhizhanovskaya, V. V., M. A. Zatevakhin, A. A. Ignatiev, Yu E. Gorbachev, W. J. Goedheer, and P. M. A. Sloot. "A 3D Virtual Reactor for Simulation of Silicon-Based Film Production." In ASME/JSME 2004 Pressure Vessels and Piping Conference. ASMEDC, 2004. http://dx.doi.org/10.1115/pvp2004-3120.

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In this paper we introduce a Grid-based Virtual Reactor, a problem-solving environment that supports detailed numerical study of industrial thin film production in Plasma Enhanced Chemical Vapor Deposition (PECVD) reactors. We describe the physics and chemistry underpinning the deposition process, the numerical approach to simulate these processes on advanced computer architectures as well as the associated software environment supporting computational experiments. In the developed 3D model we took into account all relevant chemical kinetics, plasma physics and transport processes that occur in PECVD reactors. We built an efficient problem-solving environment for scientists studying PECVD processes and end-users working in chemical industry and validated the resulting Virtual Reactor against real experiments.
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6

Ren, Z. F. "Nano Materials and Physics." In ASME 4th Integrated Nanosystems Conference. ASMEDC, 2005. http://dx.doi.org/10.1115/nano2005-87045.

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Aligning carbon nanotubes in any way desired is very important for many fundamental and applied research projects. In this talk, I will first discuss how to grow them with controlled diameter, length, spacing, and periodicity using catalyst prepared by magnetron sputtering, electron beam (e-beam) lithography, electrochemical deposition, and nanosphere self-assembly. Then I will present our results of field emission property of both the aligned carbon nanotubes grown on flat substrates and random carbon nanotubes grown on carbon cloth. For the aligned carbon nanotubes arrays, I will present the preliminary results of using them as photonic band gap crystals and nanoantennae. As an alternative material of carbon nanotubes, ZnO nanowires have been grown in both aligned fashion on flat substrates and random fashion on carbon cloth. Using these ZnO nanowires, good field emission properties were observed. Furthermore, I will present our recent studies on the electrical breakdown and transport properties of a single suspended nanotube grown on carbon cloth by a scanning electron microscope probe incorporated into a high resolution transmission electron microscope. As part of the potential applications, I will also discuss our recent success on molecules delivery into cells using carbon nanotubes. Finally I will talk about our most recent endeavor on achieving thermoelectric figure-of-merit (ZT) higher than 2 using our unique nanocomposite approach. Plasma-enhanced chemical vapor deposition (PECVD) was discovered by my group in 1998 to be able to grow aligned carbon nanotubes [1]. Catalyst film was first deposited by magnetron sputtering. According to the thickness of the catalytic film, aligned carbon nanotubes were grown with different diameters and spacing, and different length depending the growth time. However, the two major drawbacks are 1) that the location of where the nantoube grows can not be controlled, 2) that the spacing between the nanotubes can not be varied too much. Therefore, we immediately explored to grow aligned carbon nanotubes with the location and spacing controls using e-beam lithography [2]. Unfortunately the cost is so high that the e-beam is not suited for large scale commercialization that requires only an average site density control not the exactly location, for example, electron source. It is the cost issue that made us to develop electrochemical deposition to make catalyst dots that can be separated more than 10 micormeters between dots [3]. With such arrays, we tested many samples for field emission properties and found the optimal site density [4]. However, for applications that require the location controls, for example, photonic band gap crystals, electrochemical deposition can not be satisfactory. It is this kind of application that led us to develop the nanosphere self-assembly technique in large scale [5]. For field emission, we found that ZnO nanowires are good field emitters comparable to carbon nanotubes if they are grown with the right diameter and spacing. Here I will discuss the field emission properties of ZnO nanowires as an alternative material to carbon nanotubes [6]. Us a special kind of carbon nanotubes made by PECVD, we discovered a highly efficient molecular delivery technique, named nanotube spearing, based on the penetration of Ni-particle embedded nanotubes into cell membranes by magnetic field driving. DNA plasmids encoding the enhanced green fluorescent protein (EGFP) sequence were immobilized onto the nanotubes, and subsequently speared into targeted cells. We have achieved the unprecedented high transduction efficiency in Bal17 B-lymphoma, ex vivo B cells, and primary neurons with high viability. This technique may provide a powerful tool for high efficient gene transfer in a variety of cells, especially, the hard-to-transfect cells [7]. Conventional transport studies of multiwall carbon nanotubes (MWNTs) with only the outmost wall contacted to the electrodes via side-contact shows that a MWNT is a ballistic conductor with only the outmost wall carrying current. Here we show, by using end-contact in which every wall is contacted to the electrodes, that every wall is conducting, as evidenced by a significant amount of current drop when an innermost wall is broken at high-bias. Remarkably, the breakdown of each wall was initiated in the middle of the nanotube, not at the contacts, indicating diffusive electron transport. Using end-contact, we were able to probe the conductivity wall-by-wall and found that each wall is indeed either metallic, or semiconducting, or pseudogap-like. These findings not only reveal the intrinsic physical properties of MWNTs but also provide important guidance to MWNT-based electronic devices [8]. At the end of the talk, if time permits, I will talk about our ongoing effort on improving the figure-of-merit (ZT) of thermoelectric materials using a nanocomposite strategy to mimic the structure of the superlattice of PbTe/PbSe and Bi2Te3/Sb2Te3 hoping to reduce the thermal conductivity by a factor of 2–4 while maintaining the electrical conductivity. To make a close to 100% dense nanocomposite, we started with nanoparticles synthesis, then consolidation using both the traditional hot press and the direct current fast-heat, named plasma pressure compact, to preserve the nano size of the component particles. So far, we have seen thermal conductivity decrease by a factor of 2 in the systems of Si/Ge, PbeTe/PbSe, Bi2Te3/Sb2Te3, indicating the potential of improving ZT by a factor of 2.
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Krishnaswamy, J., A. Rengan, A. R. Srivatsa, G. Matera, and J. Narayan. "Laser And Plasma Enhanced Deposition Of Diamond And Diamondlike Films By Physical And Chemical Vapor Deposition Techniques." In 1989 Microelectronic Intergrated Processing Conferences, edited by Jagdish Narayan. SPIE, 1990. http://dx.doi.org/10.1117/12.963984.

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8

Zhao, Jing-Fu, Y. Q. Li, Chyi S. Chern, Wei-Feng Huang, Peter E. Norris, B. M. Gallois, B. H. Kear, P. Lu, G. A. Kulesha, and F. Cosandey. "Growth and properties of YBCO thin films by metal-organic chemical vapor deposition and plasma-enhanced MOCVD." In Physical Concepts of Materials for Novel Optoelectronic Device Applications, edited by Manijeh Razeghi. SPIE, 1991. http://dx.doi.org/10.1117/12.24457.

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9

Gao, Ying, Pavel Dutta, Monika Rathi, Yao Yao, Milko Iliev, Jae-Hyun Ryou, and Venkat Selvamanickam. "Heteroepitaxial silicon thin films on flexible polycrystalline metal substrates for crystalline photovoltaic solar cells: A comparison between physical vapor deposition and plasma-enhanced chemical vapor deposition." In 2014 IEEE 40th Photovoltaic Specialists Conference (PVSC). IEEE, 2014. http://dx.doi.org/10.1109/pvsc.2014.6925152.

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10

Dinwiddie, Ralph B., Stephen C. Beecher, Wallace D. Porter, and Ben A. Nagaraj. "The Effect of Thermal Aging on the Thermal Conductivity of Plasma Sprayed and EB-PVD Thermal Barrier Coatings." In ASME 1996 International Gas Turbine and Aeroengine Congress and Exhibition. American Society of Mechanical Engineers, 1996. http://dx.doi.org/10.1115/96-gt-282.

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Thermal barrier coatings (TBCs) applied to the hot gas components of turbine engines lead to enhanced fuel efficiency and component reliability. Understanding the mechanisms which control the thermal transport behavior of the TBCs is of primary importance. Electron beam-physical vapor deposition (EB-PVD) and air plasma spraying (APS) are the two most commonly used coating techniques. These techniques produce coatings with unique microstructures which control their performance and stability. The density of the APS coatings was controlled by varying the spray parameters. The low density APS yttria-partially stabilized zirconia (yttria-PSZ) coatings yielded a thermal conductivity that is lower than both the high density APS coatings and the EB-PVD coatings. The thermal aging of both fully and partially stabilized zirconia are compared. The thermal conductivity of the coatings permanently increases upon exposure to high temperatures. These increases are attributed to microstructural changes within the coatings. This increase in thermal conductivity can be modeled using a relationship which depends on both the temperature and time of exposure. Although the EB-PVD coatings are less susceptible to thermal aging effects, results suggest that they typically have a higher thermal conductivity than APS coatings before thermal aging. The increases in thermal conductivity due to thermal aging for plasma sprayed partially stabilized zirconia have been found to be less than for plasma sprayed fully stabilized zirconia coatings.
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