Journal articles: 'Plasma etching'

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Гармаш, В. И., В. Е. Земляков, В. И. Егоркин, А. В. Ковальчук та С. Ю. Шаповал. "Исследование влияния атомарного состава на скорость плазмохимического травления нитрида кремния в силовых транзисторах на основе AlGaN/GaN-гетероперехода". Физика и техника полупроводников 54, № 8 (2020): 748. http://dx.doi.org/10.21883/ftp.2020.08.49646.9398.

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The effect of atomic composition on the rate of plasma chemical etching of silicon nitride in power transistors based on an AlGaN / GaN heterojunction is studied. It is shown how the subsequent process of its plasma-chemical etching depends on the configuration of the incorporation of hydrogen impurity atoms into the molecular structure of the silicon nitride deposited in the plasma. The dependence of the etching rate on the parameters of the process (the working pressure in the chamber, the power of the plasma generator, the flow of working gases, the deposition temperature) is investigated. It was shown that the etching rate of the HxSirNzHy film does not depend directly on the hydrogen content, but significantly depends on the ratio of [Si-H] / [N-H] bonds. The etching rate of HxSirNzHy in a high-density plasma at low powers is much less dependent on the configuration of hydrogen bonds than the etching rate of this dielectric in a buffer etchant.

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Mayer, Thomas M. "Plasma etching." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 44, no. 4 (February 1990): 484–85. http://dx.doi.org/10.1016/0168-583x(90)90013-k.

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Cheng, Kenneth J., Weicong Ma, and Philip D. Evans. "Differential Etching of Rays at Wood Surfaces Exposed to an Oxygen Glow Discharge Plasma." Materials 17, no. 2 (January 22, 2024): 521. http://dx.doi.org/10.3390/ma17020521.

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Basswood samples were exposed to oxygen glow-discharge plasmas for 30 min, and etching of radial and tangential longitudinal surfaces was measured. It was hypothesized that there would be a positive correlation between etching and plasma energy, and differential etching of wood surfaces because of variation in the microstructure and chemical composition of different woody tissues. Etching at the surface of basswood samples was examined using profilometry. Light and scanning electron microscopy were used to examine the microstructure of samples exposed to plasma. There was a large effect of plasma energy on etching of basswood surfaces, and radial surfaces were etched to a greater extent than tangential surfaces. However, rays at radial surfaces were more resistant to etching than fibers, resulting in greater variation in the etching of radial versus tangential surfaces. The same phenomenon occurred at radial surfaces of balsa wood, jelutong and New Zealand white pine subjected to plasma etching. The possible reasons for the greater resistance of rays to plasma etching are explored, and it is suggested that such differential etching of wood surfaces may impose a limitation on the use of plasma to precisely etch functional patterns at wood surfaces (raised pillars, grooves), as has been done with other materials.

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Lee, Youngseok, Heejung Yeom, Daehan Choi, Sijun Kim, Jangjae Lee, Junghyung Kim, Hyochang Lee, and ShinJae You. "Database Development of SiO2 Etching with Fluorocarbon Plasmas Diluted with Various Noble Gases of Ar, Kr, and Xe." Nanomaterials 12, no. 21 (October 29, 2022): 3828. http://dx.doi.org/10.3390/nano12213828.

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In the semiconductor industry, fluorocarbon (FC) plasma is widely used in SiO2 etching, with Ar typically employed in the dilution of the FC plasma due to its cost effectiveness and accessibility. While it has been reported that plasmas with other noble gases, namely Kr and Xe, have distinct physical properties such as electron density and temperature, their implementation into plasma etching has not been sufficiently studied. In this work, we conducted SiO2 etching with FC plasmas diluted with different noble gases, i.e., FC precursors of C4F8 and CH2F2 with Ar, Kr, or Xe, under various gas flow rates of each as well as plasma diagnostics for the process interpretation. We show that Ar, Kr, and Xe gas mixtures depend on the FC precursor flow rate and the pattern width in a significantly different manner and we elucidate these findings based on plasma diagnostic results. The results of this work are expected to offer a practical etching database for diverse applications including plasma process engineering and the development of plasma simulation in the semiconductor industry.

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Park, Jin-Seong, In-Sung Park, Seon Yong Kim, Taehoon Lee, Jinho Ahn, Tae-Hun Shim, and Jea-Gun Park. "Plasma Etching of SiO2 with CF3I Gas in Plasma-Enhanced Chemical Vapor Deposition Chamber for In-Situ Cleaning." Science of Advanced Materials 11, no. 12 (December 1, 2019): 1667–72. http://dx.doi.org/10.1166/sam.2019.3634.

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Non-global-warming CF3I gas has been investigated as a removal etchant for SiO2 film. Thermally fabricated SiO2 films were etched by the plasma generated with a gas mixture of CF3I and O2 (CF3I/O2) in the plasma-enhanced chemical vapor deposition chamber. The etch rate of SiO2 films was studied along with the process parameters of plasma etching such as chamber pressure, etching gas flow ratio of CF3I to CF3I/O2, plasma power, and chamber temperature. Increasing the chamber pressure from 400 to 1,000 mTorr decreased the etch rate of SiO2 film. The etch rate of this film showed a minimum value at a gas flow ratio of 0.71 in CF3I to CF3I/O2 and then increased at a higher CF3I gas flow ratio. In addition, the elevated plasma power increased the etch rate. However, the chamber temperature has little effect on the etch rate of SiO2 films. When only CF3I gas without O2 was supplied for etching, polymerized fluorocarbon was formed on the surface, indicating the role of oxygen in ashing the polymerized fluorocarbon during the etching process.

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Lakrathok, Anantachai, Jakrapong Supadech, Chana Leepattarapongpan, Watcharapong Paosangthong, Nithi Atthi, Wutthinan Jeamsaksiri, and Chinorat Kobdaj. "Design of the comb-drive structure to reduce asymmetry lateral plasma etching on the cavity SOI substrate for MEMS fabrication." Journal of Physics: Conference Series 2934, no. 1 (January 1, 2025): 012027. https://doi.org/10.1088/1742-6596/2934/1/012027.

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Abstract A conventional microelectromechanical system (MEMS) fabricated using deep-reactive ion etching (DRIE) on a silicon-on-insulator (SOI) wafer and wet etching with hydrofluoric acid (HF) encounters challenges related to isotropic etching, such as microstructure stiction, etched byproduct contamination, and over-etching of the side protective oxide layer. Even with the utilization of cavity SOI (C-SOI) wafers, certain movable structures can still experience damage due to asymmetry in lateral plasma etching caused by the uneven distribution of plasma ions and etchant radicals. This investigation examines three different comb designs to reduce the asymmetry lateral etching caused by DRIE. Factors such as the presence of a pedestal under comb branches and the area of the proof-mass are taken into consideration. At 100 µm of depth, the comb size, line width, and space are 15.0, 7.3 and 5.0 µm, respectively. The overlapping length of combs is 15 µm of the total comb bar length. The proof-mass has an area variation of 300 x 900 µm2, 600 x 900 µm2, and 1200 x 900 µm2, respectively. The Deep Si etching process employs time multiplex etching (Bosch process), which involves the deposition of C4F8 fluorocarbon film and etching with SF6, controlled by inductively coupled plasma (ICP) power to generate a high-density charge. The direct current voltages during the deposition and etching stages are 0 volts and 170 volts for Si bulk, and 0 volts and 3 volts for C-SOI. Our results indicate that the comb designs do not effectively mitigate the asymmetry in lateral etching on the comb structures in this configuration. However, we have observed that the location on the wafer determines the asymmetry lateral etching.

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Efremov, Alexander M., Alexander V. Bobylev, Ekaterina M. Kaznacheeva, and Kwang-Ho Kwon. "ON EFFECTS OF INITIAL CF4 + CHF3 + O2 MIXTURE COMPOSITION ON PLASMA PARAMETERS AND REACTIVE-ION ETCHING OF SILICON." ChemChemTech 68, no. 1 (November 28, 2024): 39–47. https://doi.org/10.6060/ivkkt.20256801.7096.

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In this work, we discussed how the CF4/CHF3 ratio in CF4 + CHF3 + O2 gas mixture does influence steady-state plasma composition and silicon etching kinetics in a conventional reactive-ion process. Plasma diagnostics by double Langmuir probes delivered the information on electro-physical plasma parameters and provided input data for the modeling of plasma chemistry. As a result, we confirmed basic properties of CF4 + O2 and CHF3 + O2 plasmas known from previous works as well as analyzed formation/decay kinetics for plasma active species in the three-component gas mixture. In particular, it was found that the substitution of CF4 by CHF3 at fixed content of oxygen in a feed gas a) causes weak changes in electron temperature and plasma density; b) leads to an increase in plasma polymerizing ability; and c) sufficiently (by more than 3 times) reduces F atom density. The last effect was confirmed by the satisfactory agreement with experimental data obtained using the optical emission actinometry method. Etching experiments indicated a monotonic decrease in Si etching rate toward CHF3-rich plasmas, from 140 nm/min down to 65 nm/min. The analysis of etching kinetics allowed one to conclude that a) the dominant etching mechanisms is the ion-assisted chemical reaction; and b) the effective reaction probability keeps the nearly constant value, in spite of increasing polymer deposition rate. This effect may reflect the change in passivation of polymer-free surface by oxygen atoms. For citation: Efremov A.M., Bobylev A.V., Kaznacheeva E.M., Kwon K.-H. On effects of initial CF4 + CHF3 + O2 mixture composition on plasma parameters and reactive-ion etching of silicon. ChemChemTech [Izv. Vyssh. Uchebn. Zaved. Khim. Khim. Tekhnol.]. 2025. V. 68. N 1. P. 39-47. DOI: 10.6060/ivkkt.20256801.7096.

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Rahim, Rosminazuin A., Badariah Bais, and Majlis Burhanuddin Yeop. "Double-Step Plasma Etching for SiO₂ Microcantilever Release." Advanced Materials Research 254 (May 2011): 140–43. http://dx.doi.org/10.4028/www.scientific.net/amr.254.140.

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In this paper, an isotropic dry plasma etching was used to release the suspended SiO2 microcantilever from the substrate of SOI wafer. Employing the plasma dry etching technique, the frontside etching for the SiO2 microcantilever release is done using the Oxford Plasmalab System 100. To obtain the optimum condition for the microcantilever release using the plasma etcher, the etching parameters involved are 100 sccm of SF6 flow, 2000 W of capacitively coupled plasma (CCP) power, 3 W of inductively coupled plasma (ICP) power, 20°C of etching temperature and 30 mTorr chamber pressure. The optimum parameters yield lateral etch rate of about 5 μm/min and vertical etch rate of about 8 μm/min. Two etching methods have been considered in this study. The first method employs only the isotropic etching to realize the microcantilever release while the second method utilizes both the anisotropic etching and the isotropic etching. For the second method, the process starts with the anisotropic etching from the deep reactive ion etching (DRIE) system which is then followed by the isotropic etching to complete the microcantilever releasing process. The purpose of the anisotropic etching is to create an etching window for the subsequent isotropic etching process. By using double-step etching method which combines both isotropic and anisotropic plasma etching for the microcantilever release process, the releasing process of suspended microcantilever is significantly improved.

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Hao, Yuhua, and Xia Wang. "Effects of the Photoelectrochemical Etching in Hydrogen Fluride (HF) on the Optoelectrical Properties of Ga₂O₃." Journal of Physics: Conference Series 2112, no. 1 (November 1, 2021): 012006. http://dx.doi.org/10.1088/1742-6596/2112/1/012006.

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Abstract Photoelectrochemical (PEC) etching is preferred to produce micro-and nano-structures for constructing Ga2O3-based electronics and optoelectronics, owing to its numerous controllable parameters. During the devices fabrications, beyond the wet chemical and dry (plasma) etching produces, PEC etching also leads to device degradations inordinately. In this work, the Ga2O3 thin film was PEC etched by hydrogen fluride (HF) etchant, and its opto-electric deep-ultraviolet sensing performances, including photo-to-dark current ratio, responsivity, and response speed, before and after PEC etching were analyzed and discussed.

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Lee, Ji Yeon, Hong Seong Gil, Woo Chang Park, Yun Jong Jang, Dong Woo Kim, and Geun Young Yeom. "Development of a Highly Selective Etching Process for SiO₂ over Si and SiN_x Using F/H-Based Remote Plasmas and a Vapor Phase Solvent." ECS Meeting Abstracts MA2024-02, no. 33 (November 22, 2024): 4961. https://doi.org/10.1149/ma2024-02334961mtgabs.

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Isotropic etching is traditionally performed using liquid-based wet etching techniques. However, with the increasing integration of devices, achieving conformal etching in high aspect ratio patterns becomes difficult, as liquid chemicals are limited in their ability to penetrate deep into these structures. Moreover, during the drying phase following chemical treatment, surface tension can lead to pattern collapse. Consequently, there is a growing need for dry isotropic etching methods to replace conventional wet etching in advanced device manufacturing. In cases where high selectivity for SiO2 isotropic dry etching is required, mixtures of fluorine-based and hydrogen-based gases are typically used to generate HF, which acts as the etchant for SiO2. SiO2 can be etched through two main mechanisms. The first mechanism involves the direct reaction of HF with H2O or alcohol to etch SiO2. The second mechanism involves the formation of (NH4)2SiF6 salt through the reaction of HF with NH3, which occurs in a plasma containing NH3 and NF3. This (NH4)2SiF6 salt is then sublimated and removed in a subsequent heating process at temperatures above 100°C. The reaction of HF with NH3 to form (NH4)2SiF6 can lead to the generation of ammonium salts that may act as contaminants within the etching chamber. Additionally, this approach necessitates an extra thermal treatment step to eliminate the (NH4)2SiF6 salt. HF can be supplied either directly as vapor or generated through plasma containing fluorine and hydrogen. Plasma-based methods generally offer advantages in terms of safety and process efficiency compared to direct HF vapor usage In this study, we investigated an isotropic dry etching process in which HF etchant is generated by discharging fluorine-based and hydrogen-based gas mixtures. A vapor-phase solvent is supplied outside the discharge region to ionize HF and directly etch SiO2. When using H2O vapor as the solvent, we achieved the etch selectivity of SiO2 over SiNx and poly Si higher than 100 and 600, respectively, was obtained while having SiO2 EPC of ~30 nm/min by optimized conditions. The etching mechanism was clarified through gas-phase and surface analyses using optical emission spectroscopy (OES), quadrupole mass spectrometry (QMS), and X-ray photoelectron spectroscopy (XPS). To assess pattern collapse, we compared the wet phase and vapor phase processes applied to the Si trench pattern. The results suggest that using fluorine and hydrogen-based remote plasmas with a vapor-phase solvent is promising for highly selective isotropic SiO2 etching in the fabrication of next-generation 3D devices.

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Lee, Ji Yeon, Dae Whan Kim, Hong Seong Gil, Doo San Kim, Yun Jong Jang, Dong Woo Kim, and Jiyeon Lee. "Selective Isotropic Dry Etching of SiO₂ Using F/H-Based Pulsed Remote Plasma and a Vapor Phase Solvent." ECS Meeting Abstracts MA2024-01, no. 30 (August 9, 2024): 1516. http://dx.doi.org/10.1149/ma2024-01301516mtgabs.

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Isotropic etching generally employs liquid-based wet etching techniques. However, due to the high integration of devices, conformal etching is challenging in patterns with a high aspect ratio because liquid chemicals struggle to penetrate inside the pattern. Additionally, during the drying process after chemical treatment, pattern collapse is observed due to surface tension. Therefore, there is a need for dry isotropic etching techniques to replace wet etching techniques in next-generation device manufacturing processes. Typically, when high selectivity SiO2 isotropic dry etching is required, F-base/H-based gas mixtures are utilized to form HF, which serves as an etchant for SiO2. SiO2 can be dry etched through two different mechanisms. First, HF reacts directly with H2O or alcohol, etching SiO2. The other way is to produce (NH4)2SiF6 salt from the reaction of NH3, which can be formed in a plasma containing NH3 and NF3. This (NH4)2SiF6 salt is sublimated and removed by a following heating process at a temperature over 100ºC. The process above has some disadvantages, such as lowering the etch selectivity of SiO2 over Si and Si3N4 because Si and Si3N4 can be etched by F radicals remaining in the plasma. This study aimed to overcome these disadvantages by controlling the F radical through pulsing the remote plasma during the discharging of F-based/H-based gas mixtures for the formation of HF. By pulsing the remote plasma, SiO2 could be selectively etched at a higher etch rate relative to those of Si and Si3N4. Additionally, various types of H/F-based gas mixtures that do not contain nitrogen while producing HF were investigated to prevent the formation of ammonium powders, which can be a source of contamination in the chamber. Futhermore, the etching mechanisms were identified through gas phase anlysis and surface analysis. Also, any possible surface damage during the etching process was investigated.

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VOSHCHENKOV, ALEXANDER M. "FUNDAMENTALS OF PLASMA ETCHING FOR SILICON TECHNOLOGY (PART 1)." International Journal of High Speed Electronics and Systems 01, no. 03n04 (September 1990): 303–45. http://dx.doi.org/10.1142/s0129156490000149.

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Over the past decade, as the rapid evolution of semiconductor technology has progressed towards submicron design rules, plasma (dry) etching has supplanted simple wet etching processes for the transfer of patterns. To understand the underlying need for development of plasma etching, a brief background of integrated semiconductor technology is presented. Along with a historical perspective of the evolution of plasma etching, the relationship of plasma etching to lithography needs, its basic characteristics and advantages over wet chemical processing are discussed. Following this, relevant concepts of plasma physics and chemistry, based on experience with plasma etching applications for silicon technology, which can be used as building blocks for technology development are described.

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Hershkowitz, Noah, and Robert A. Breun. "Diagnostics for plasma processing (etching plasmas) (invited)." Review of Scientific Instruments 68, no. 1 (January 1997): 880–85. http://dx.doi.org/10.1063/1.1147752.

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Petrova, Anna, Vadim Pinaev, Alexey Safonov, and Sergey Khmel. "Etching of a fluoropolymer coating synthesized by the hot wire chemical vapor deposition method in a low-frequency induction discharge plasma." E3S Web of Conferences 578 (2024): 01028. http://dx.doi.org/10.1051/e3sconf/202457801028.

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The process of plasma etching for the formation of a biphilic pattern in a continuous homogeneous fluoropolymer coating on a copper substrate is studied. Argon or oxygen plasma of low frequency ferromagnetic amplified induction discharge is used to etch a fluoropolymer coating. Plasma etching was carried out through a mask with parallel slits. The etching rate in argon plasma was 10 nm/min, the etching rate in oxygen plasma was 60 nm/min. Biphilic surfaces were obtained, consisting of fluoropolymer strips on a copper surface. It has been shown that when using both argon plasma and oxygen plasma, it is possible to create biphilic surfaces by etching a continuous homogeneous fluoropolymer coating through a mask. Moreover, oxygen plasma is better suited for this because it has a higher etching rate and weakly changes the wettability of the surface.

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Ku, Ching-Ming, and Stone Cheng. "Factor Design for the Oxide Etching Process to Reduce Edge Particle Contamination in Capacitively Coupled Plasma Etching Equipment." Applied Sciences 12, no. 11 (June 3, 2022): 5684. http://dx.doi.org/10.3390/app12115684.

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During the oxide layer etching process, particles in capacitively coupled plasma etching equipment adhere to the wafer edge and cause defects that reduce the yield from semiconductor wafers. To reduce edge particle contamination in plasma etching equipment, we propose changes in the voltage and temperature of the electrostatic chuck, plasma discharge sequence, gas flow, and pressure parameters during the etching process. The proposed edge particle reduction method was developed by analyzing particle maps after wafer etching. Edge particle adherence in plasma etching equipment can be reduced by decreasing the voltage and temperature changes of the electrostatic chuck and generating a plasma sheath with a continuous discharge sequence of radio-frequency plasma. The gas pressure and flow rate also affect the number of wafer edge particles. Experimental results were used to optimize the equipment parameters to reduce edge particle contamination and improve edge wafer defects after dry etching.

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Song, Wan Soo, Ju Eun Kang, and Sang Jeen Hong. "Spectroscopic Analysis of CF4/O2 Plasma Mixed with N2 for Si3N4 Dry Etching." Coatings 12, no. 8 (July 27, 2022): 1064. http://dx.doi.org/10.3390/coatings12081064.

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Silicon nitride (Si3N4) etching using CF4/O2 mixed with N2 has become very popular in 3D NAND flash structures. However, studies on Si3N4 dry etching based on optical emission spectroscopy (OES) are lacking; in particular, no study has reported the use of OES for analyzing N2-mixed CF4/O2 plasma. Thus, this study demonstrates an OES-based approach for analyzing a mixed-gas plasma for etching Si3N4 thin films. The state of each single gas plasma of CF4, O2, and N2 as well as that of mixed plasmas of heterogeneous gases CF4/O2, CF4/N2, and O2/N2 was investigated to analyze the mixed-gas plasma. Furthermore, the amount of N2 in the CF4/O2 plasma varied from 0 to 8 sccm. The relationship between the OES analysis results and the Si3N4 etch rate was subsequently established using Si3N4 film etching, and the explanation was verified through a chemical reaction modeling and surface reaction. Therefore, our study confirmed the alteration in chemical species and quantity that occurred when N2 was added to CF4/O2 plasma and the effect of the alteration on Si3N4 etch.

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Jang, Jin Nyoung, Jong Hwa Lee, Sangheon Lee, Kiro Jung, Donghoon Kim, Mun-Pyo Hong, Sang-Gab Kim, Soo Ouk Jang, and Chiwoo Kim. "64‐4: ECR Plasma Source for Copper Thin Film Dry Etching." SID Symposium Digest of Technical Papers 55, no. 1 (June 2024): 878–80. http://dx.doi.org/10.1002/sdtp.17673.

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Dry etching process of thin copper films using high electron temperature ECR (electron cyclotron resonance) plasma source is developed. With ECR source and RIE (reactive ion etching) mode, etching rate of 175 nm/min is achieved. Dry etching is performed under high electron temperature plasma source with low temperature substrate and employing a reactive ion etching mode. To compensate the large area etching uniformity, scanning low temperature susceptor is adopted. Rectangular‐type microwave slot antenna (ReSLAN) is used to generate ECR plasma.

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Saito, Suguru, Yoshiya Hagimoto, Hayato Iwamoto, and Yusuke Muraki. "Mechanism of Plasma-Less Gaseous Etching Process for Damaged Oxides from the Ion Implantation Process." Solid State Phenomena 145-146 (January 2009): 227–30. http://dx.doi.org/10.4028/www.scientific.net/ssp.145-146.227.

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Recently, plasma-less gaseous etching processes have attracted attention for their interesting etching properties. Previously, we reported on the etching properties of theses processes for various kinds of oxides and revealed that they reduce the etch rate of the chemical-vapor-deposited (CVD) oxides more than the conventional wet etching process does [1]. Our results also revealed that depressions called divots in the CVD oxide of the shallow trench isolation (STI) became smaller in size by substituting a plasma-less gaseous etching process for the conventional wet etching process. In semiconductor manufacturing, many processes are used to remove oxides damaged during ion implantation or reactive ion etching on the device surface. Therefore, it is very important to understand the etching properties of plasma-less gaseous etching processes for damaged oxides as well as those for other kinds of oxides. In this report, we evaluate the etching properties of one particular plasma-less gaseous etching process for oxide films damaged during the ion implantation process under various conditions and discuss the mechanism of interesting etching properties for the damaged oxides.

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Chen, Yun, Dachuang Shi, Yanhui Chen, Xun Chen, Jian Gao, Ni Zhao, and Ching-Ping Wong. "A Facile, Low-Cost Plasma Etching Method for Achieving Size Controlled Non-Close-Packed Monolayer Arrays of Polystyrene Nano-Spheres." Nanomaterials 9, no. 4 (April 12, 2019): 605. http://dx.doi.org/10.3390/nano9040605.

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Monolayer nano-sphere arrays attract great research interest as they can be used as templates to fabricate various nano-structures. Plasma etching, and in particular high-frequency plasma etching, is the most commonly used method to obtain non-close-packed monolayer arrays. However, the method is still limited in terms of cost and efficiency. In this study, we demonstrate that a low frequency (40 kHz) plasma etching system can be used to fabricate non-close-packed monolayer arrays of polystyrene (PS) nano-spheres with smooth surfaces and that the etching rate is nearly doubled compared to that of the high-frequency systems. The study reveals that the low-frequency plasma etching process is dominated by a thermal evaporation etching mechanism, which is different from the atom-scale dissociation mechanism that underlines the high-frequency plasma etching. It is found that the polystyrene nano-sphere size can be precisely controlled by either adjusting the etching time or power. Through introducing oxygen as the assisting gas in the low frequency plasma etching system, we achieved a coalesced polystyrene nano-sphere array and used it as a template for metal-assisted chemical etching. We demonstrate that the method can significantly improve the aspect ratio of the silicon nanowires to over 200 due to the improved flexure rigidity.

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Jin, Lei, Zhuorui Tang, Long Chen, Guijiu Xie, Zhanglong Chen, Wei Wei, Jianghua Fan, Xiaoliang Gong, and Ming Zhang. "Sidewall Modification Process for Trench Silicon Power Devices." Electronics 12, no. 11 (May 25, 2023): 2385. http://dx.doi.org/10.3390/electronics12112385.

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In this study, trench sidewall modification processes were designed to improve profile uniformity and thereby enhance the electrical performance of silicon power devices in large-scale production. The effects of trench sidewall modification on the morphology, structure and electrical properties were studied. Plasma-induced damage in etching processes was also observed and briefly explained. Straight and smooth sidewall profiles were achieved through adjusting the SF6/CHF3 proportion in a combined etchant gas flow in the main etching procedure. By comparing HRSEM images from different etching protocols, it was evident that an enhanced CHF3 flow formed a proper passivation of the sidewall, eliminating the ion damages that are common in current main etch steps. To address the impurities introduced from the etchant gas and improve the gate oxide uniformity, further steps of depolymerization were applied in a plasma asher chamber, followed by wet clean steps. In the meantime, the plasma-induced charge accumulation effect was reduced by UV curing. Improved trench sidewall profiles and the gate oxide uniformity contributed to a lower leakage current between the gate and source terminals, leading to an overall yield enhancement of device properties in large-scale silicon wafer fabrication.

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Guan, Lulu, Xingyu Li, Dongchen Che, Kaidong Xu, and Shiwei Zhuang. "Plasma atomic layer etching of GaN/AlGaN materials and application: An overview." Journal of Semiconductors 43, no. 11 (November 1, 2022): 113101. http://dx.doi.org/10.1088/1674-4926/43/11/113101.

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Abstract With the development of the third generation of semiconductor devices, it is essential to achieve precise etching of gallium nitride (GaN) materials that is close to the atomic level. Compared with the traditional wet etching and continuous plasma etching, plasma atomic layer etching (ALE) of GaN has the advantages of self-limiting etching, high selectivity to other materials, and smooth etched surface. In this paper the basic properties and applications of GaN are presented. It also presents the various etching methods of GaN. GaN plasma ALE systems are reviewed, and their similarities and differences are compared. In addition, the industrial application of GaN plasma ALE is outlined.

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Hui, L. S., E. Whiteway, M. Hilke, and A. Turak. "Effect of post-annealing on the plasma etching of graphene-coated-copper." Faraday Discuss. 173 (2014): 79–93. http://dx.doi.org/10.1039/c4fd00118d.

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High temperature deposition of graphene on Cu by chemical vapor deposition can be used to produce high quality films. However, these films tend to have a non-equilibrium structure, with relatively low graphene adhesion. In this study, samples of graphene grown on copper foils by high temperature CVD were post-deposition annealed at temperatures well below the critical temperature of Cu. Resistance to etching under plasma was examined to assess the mechanical robustness of the graphene on the Cu surface, analyzed using optical and Raman microscopies. We found a correlation between the post-annealing time and etching time for the complete removal of graphene from Cu. Etching rates, minimum etch times, and surface appearance were observed to vary depending on the etching plasma (air, oxygen or nitrogen). Oxygen plasmas were found to be the least aggressive, emphasizing the improved adhesion with post-annealing treatments. Our results imply that the etching of graphene on Cu, and hence the adhesion of graphene, can be controlled by proper annealing and choice of plasma gas.

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Filippov, I. A., L. E. Velikovskiy, and V. A. Shakhnov. "Plasma-Chemical Etching of Thin Silver Films for Applications of Plasmonics by Inductive-Coupled Argon Plasma." Herald of the Bauman Moscow State Technical University. Series Instrument Engineering, no. 4 (133) (December 2020): 165–80. http://dx.doi.org/10.18698/0236-3933-2020-4-165-180.

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The study focuses on the processes of plasma-chemical etching of silver films for the manufacture of photonic elements --- nanoscale light sources, and examines the theoretical foundations of etching processes and the process of plasma formation in plasma-chemical etching facilities. We assessed the introduced technology when forming topological elements in thin films of silver metal, and identified key problems, such as redeposition and non-volatility of the material. The paper presents the results of simulating the etching process for several critical submicron sizes, and, based on the simulation results, shows the dependences of the etching rates on the power of the plasma sources. The focus is on the formation of holes to create a nanoscale light source. Both positive and negative properties of the plasma-chemical etching method using a source of inductive-coupled plasma are considered, and the features of technological facilities used for these processes are outlined. The process of formation of nanoelements in a silver film and the effect of redeposition of material particles as a result of ion sputtering are considered. We propose a two-stage etching process, which makes it possible to form a vertical profile of the walls of the manufactured elements and to avoid the effect of redeposition. We also give recommendations for the processes of etching through an electron-beam resist in facilities with an inductive-coupled plasma source. By optimizing the thicknesses of the resistive mask and plasma sources, we obtained the results of etching nanoscale elements with preservation of geometric shapes

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Brokmann, Ulrike, Christoph Weigel, Luisa-Marie Altendorf, Steffen Strehle, and Edda Rädlein. "Wet Chemical and Plasma Etching of Photosensitive Glass." Solids 4, no. 3 (August 21, 2023): 213–34. http://dx.doi.org/10.3390/solids4030014.

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Photosensitive glasses for radiation-induced 3D microstructuring, due to their optical transparency and thermal, mechanical, and chemical resistance, enable the use of new strategies for numerous microscale applications, ranging from optics to biomedical systems. In this context, we investigated the plasma etching of photosensitive glasses after their exposure and compared it to the established wet chemical etching method, which offers new degrees of freedom in microstructuring control and microsystem fabrication. A CF4/H2 etching gas mixture with a constant volumetric flow of 30 sccm and a variable H2 concentration from 0% to 40% was utilized for plasma-based etching, while for wet chemical etching, diluted hydrofluoric acid (1% ≤ cHF ≤ 20%) was used. Therefore, both etching processes are based on a chemical etching attack involving fluorine ions. A key result is the observed reversion of the etch selectivity between the initial glassy and partially crystallized parts that evolve after UV exposure and thermal treatment. The crystallized parts were found to be 27 times more soluble than the unexposed glass parts during wet chemical etching. During the plasma etching process, the glassy components dissolve approximately 2.5 times faster than the partially crystalline components. Unlike wet chemical etching, the surfaces of plasma etched photostructured samples showed cone- and truncated-cone-shaped topographies, which supposedly resulted from self-masking effects during plasma etching, as well as a distinct physical contribution from the plasma etching process. The influences of various water species on the etching behaviors of the homogeneous glass and partially crystallized material are discussed based on FTIR-ATR and in relation to the respective etch rates and SNMS measurements.

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Lee, Junmyung, Alexander Efremov, Geun Young Yeom, Nomin Lim, and Kwang-Ho Kwon. "Application of Si and SiO2 Etching Mechanisms in CF4/C4F8/Ar Inductively Coupled Plasmas for Nanoscale Patterns." Journal of Nanoscience and Nanotechnology 15, no. 10 (October 1, 2015): 8340–47. http://dx.doi.org/10.1166/jnn.2015.11256.

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An investigation of the etching characteristics and mechanism for both Si and SiO2 in CF4/C4F8/Ar inductively coupled plasmas under a constant gas pressure (4 mTorr), total gas flow rate (40 sccm), input power (800 W), and bias power (150 W) was performed. It was found that the variations in the CF4/C4F8 mixing ratio in the range of 0–50% at a constant Ar fraction of 50% resulted in slightly non-monotonic Si and SiO2 etching rates in CF4-rich plasmas and greatly decreasing etching rates in C4F8-rich plasmas. The zero-dimensional plasma model, Langmuir probe diagnostics, and optical emission spectroscopy provided information regarding the formation-decay kinetics for the plasma active species, along with their densities and fluxes. The model-based analysis of the etching kinetics indicated that the non-monotonic etching rates were caused not by the similar behavior of the fluorine atom density but rather by the opposite changes of the fluorine atom flux and ion energy flux. It was also determined that the great decrease in both the Si and SiO2 etching rates during the transition from the CF4/Ar to C4F8/Ar gas system was due to the deposition of the fluorocarbon polymer film.

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Moon, Chang Sung, Keigo Takeda, Makoto Sekine, Yuichi Setsuhara, Masaharu Shiratani, and Masaru Hori. "Combinatorial Plasma Etching Process." Applied Physics Express 2, no. 9 (September 4, 2009): 096001. http://dx.doi.org/10.1143/apex.2.096001.

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Nishimatsu, Shiger, Keizo Suzuki, Ken Ninomiya, and Ichiro Kanomata. "4462863 Microwave plasma etching." Vacuum 35, no. 1 (January 1985): 62. http://dx.doi.org/10.1016/0042-207x(85)90107-1.

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Darnon, Maxime, Mathieu de Lafontaine, Maïté Volatier, Simon Fafard, Richard Arès, Abdelatif Jaouad, and Vincent Aimez. "Deep germanium etching using time multiplexed plasma etching." Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 33, no. 6 (November 2015): 060605. http://dx.doi.org/10.1116/1.4936112.

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Verdonck, P., G. Brasseur, and J. Swart. "Reactive ion etching and plasma etching of tungsten." Microelectronic Engineering 21, no. 1-4 (April 1993): 329–32. http://dx.doi.org/10.1016/0167-9317(93)90084-i.

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Gottscho, Richard A., Maria E. Barone, and Joel M. Cook. "Use of Plasma Processing in Making Integrated Circuits and Flat-Panel Displays." MRS Bulletin 21, no. 8 (August 1996): 38–42. http://dx.doi.org/10.1557/s0883769400035697.

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The ever-shrinking dimensions of microelectronic devices has mandated the use of plasma processing in integrated circuit (IC) factories worldwide. Today the plasma-processing industry has grown to over $3 billion in revenues per year, well in excess of predictions made only a few years ago. Plasma etching and deposition systems are also found throughout flat-panel-display (FPD) factories despite the much larger dimensions of thin-film transistors (TFTs) that are used to switch picture elements (pixels) on and off. Besides the use of plasma in etching and depositing thin films, other processes include the following: removal of photoresist remnants after development (descumming), stripping developed photoresist after pattern transfer (ashing), and passivating defects in polycrystalline material. Why are plasma processes so prevalent?In etching, plasmas are used for high-fidelity transfer of the photolithographically defined pattern that defines the device or circuit. More generally, plasma provides the means to taper sidewalls. In Si processing, the sidewalls must be nearly vertical to obtain high density integration and faster performance. However in making FPDs, sidewalls are tapered to obtain uniform step coverage and reduce shorting. In deposition, plasmas are used to enable processing at low temperature. For both etching and deposition, only plasma processing provides an economically viable means for processing large area substrates: 300 mm for Si and more than 550 × 650 mm for FPDs. It is the ability to scale uniform reactant generation to larger areas that sets plasma apart from beam-based processes that might otherwise offer the desired materials modifications. The nonequilibrium characteristics of plasma further distinguish this processing method. Energetic electrons break apart reactant precursors while ions bombard the surface anisotropically.

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Sung, Dain, Long Wen, Hyunwoo Tak, Hyejoo Lee, Dongwoo Kim, and Geunyoung Yeom. "Investigation of SiO2 Etch Characteristics by C6F6/Ar/O2 Plasmas Generated Using Inductively Coupled Plasma and Capacitively Coupled Plasma." Materials 15, no. 4 (February 10, 2022): 1300. http://dx.doi.org/10.3390/ma15041300.

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The etching properties of C6F6/Ar/O2 in both an inductively coupled plasma (ICP) system and a capacitively coupled plasma (CCP) system were evaluated to investigate the effects of high C/F ratio of perfluorocarbon (PFC) gas on the etch characteristics of SiO2. When the SiO2 masked with ACL was etched with C6F6, for the CCP system, even though the etch selectivity was very high (20 ~ infinite), due to the heavy-ion bombardment possibly caused by the less dissociated high-mass ions from C6F6, tapered SiO2 etch profiles were observed. In the case of the ICP system, due to the higher dissociation of C6F6 and O2 compared to the CCP system, the etching of SiO2 required a much lower ratio of O2/C6F6 (~1.0) while showing a higher maximum SiO2 etch rate (~400 nm/min) and a lower etch selectivity (~6.5) compared with the CCP system. For the ICP etching, even though the etch selectivity was much lower than that by the CCP etching, due to less heavy-mass-ion bombardment in addition to an adequate fluorocarbon layer formation on the substrate caused by heavily dissociated species, highly anisotropic SiO2 etch profiles could be obtained at the optimized condition of the O2/C6F6 ratio (~1.0).

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Lim, Nomin, Yeon Sik Choi, Alexander Efremov, and Kwang-Ho Kwon. "Dry Etching Performance and Gas-Phase Parameters of C6F12O + Ar Plasma in Comparison with CF4 + Ar." Materials 14, no. 7 (March 24, 2021): 1595. http://dx.doi.org/10.3390/ma14071595.

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This research work deals with the comparative study of C6F12O + Ar and CF4 + Ar gas chemistries in respect to Si and SiO2 reactive-ion etching processes in a low power regime. Despite uncertain applicability of C6F12O as the fluorine-containing etchant gas, it is interesting because of the liquid (at room temperature) nature and weaker environmental impact (lower global warming potential). The combination of several experimental techniques (double Langmuir probe, optical emission spectroscopy, X-ray photoelectron spectroscopy) allowed one (a) to compare performances of given gas systems in respect to the reactive-ion etching of Si and SiO2; and (b) to associate the features of corresponding etching kinetics with those for gas-phase plasma parameters. It was found that both gas systems exhibit (a) similar changes in ion energy flux and F atom flux with variations on input RF power and gas pressure; (b) quite close polymerization abilities; and (c) identical behaviors of Si and SiO2 etching rates, as determined by the neutral-flux-limited regime of ion-assisted chemical reaction. Principal features of C6F12O + Ar plasma are only lower absolute etching rates (mainly due to the lower density and flux of F atoms) as well as some limitations in SiO2/Si etching selectivity.

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Rammal, Mohammad, Ahmed Rhallabi, Delphine Néel, Dalila Make, Alexandre Shen, and Abdou Djouadi. "AlN Etching under ICP Cl2/BCl3/Ar Plasma Mixture: Experimental Characterization and Plasma Kinetic Model." MRS Advances 4, no. 27 (2019): 1579–87. http://dx.doi.org/10.1557/adv.2019.84.

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AbstractAlN etching with chloride plasmas is studied. The experimental results show that the etching of AlN under a low pressure Cl2/Ar plasma mixture in moderate DC bias is not possible. The addition of BCl3 gas to Cl2/Ar mixture allows the etching of AlN materials. However the obtained properties of etched AlN is still not in conformity with the technological specification especially for the condition which the etched AlN must be kept only along the sidewall of the InP laser cavity and be removed elsewhere (selective etching). To know more about the effect of the BCl3 addition to the Cl2/Ar plasma mixture, global model of BCl3/Cl2/Ar is developed to quantify the neutral and ion densities as well as the electron density and temperature. The simulation results show that the electron density and low pressure linearly varies with the RF power. The negative ion density decreases with the percentage of BCl3 leading to the diminution of the electronegativity which is represented by negative ion to electron density ratio. The simulation shows that the positive ion to atomic chlorine flux ratio increases with the %BCl3. Such parameters could play an important role in the ion neutral synergy during the etching process.

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Krumpolec, Richard, Jana Jurmanová, Miroslav Zemánek, Jakub Kelar, Dušan Kováčik, and Mirko Černák. "Selective Plasma Etching of Polymer-Metal Mesh Foil in Large-Area Hydrogen Atmospheric Pressure Plasma." Applied Sciences 10, no. 20 (October 21, 2020): 7356. http://dx.doi.org/10.3390/app10207356.

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We present a novel method of surface processing of complex polymer-metal composite substrates. Atmospheric-pressure plasma etching in pure H2, N2, H2/N2 and air plasmas was used to fabricate flexible transparent composite poly(methyl methacrylate) (PMMA)-based polymer film/Ag-coated Cu metal wire mesh substrates with conductive connection sites by the selective removal of the thin (~10–100 nm) surface PMMA layer. To mimic large-area roll-to-roll processing, we used an advanced alumina-based concavely curved electrode generating a thin and high-power density cold plasma layer by the diffuse coplanar surface barrier discharge. A short 1 s exposure to pure hydrogen plasma, led to successful highly-selective etching of the surface PMMA film without any destruction of the Ag-coated Cu metal wires embedded in the PMMA polymer. On the other hand, the use of ambient air, pure nitrogen and H2/N2 plasmas resulted in undesired degradation both of the polymer and the metal wires surfaces. Since it was found that the etching efficiency strongly depends on the process parameters, such as treatment time and the distance from the electrode surface, we studied the effect and performance of these parameters.

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Li, Jie, Yongjae Kim, Seunghun Han, and Heeyeop Chae. "Ion-Enhanced Etching Characteristics of sp2-Rich Hydrogenated Amorphous Carbons in CF4 Plasmas and O2 Plasmas." Materials 14, no. 11 (May 29, 2021): 2941. http://dx.doi.org/10.3390/ma14112941.

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The sp2-rich hydrogenated amorphous carbon (a-C:H) is widely adopted as hard masks in semiconductor-device fabrication processes. The ion-enhanced etch characteristics of sp2-rich a-C:H films on ion density and ion energy were investigated in CF4 plasmas and O2 plasmas in this work. The etch rate of sp2-rich a-C:H films in O2 plasmas increased linearly with ion density when no bias power was applied, while the fluorocarbon deposition was observed in CF4 plasmas instead of etching without bias power. The etch rate was found to be dependent on the half-order curve of ion energy in both CF4 plasmas and O2 plasmas when bias power was applied. An ion-enhanced etching model was suggested to fit the etch rates of a-C:H in CF4 plasmas and O2 plasmas. Then, the etch yield and the threshold energy for etching were determined based on this model from experimental etch rates in CF4 plasma and O2 plasma. The etch yield of 3.45 was observed in CF4 plasmas, while 12.3 was obtained in O2 plasmas, owing to the high reactivity of O radicals with carbon atoms. The threshold energy of 12 eV for a-C:H etching was obtained in O2 plasmas, while the high threshold energy of 156 eV was observed in CF4 plasmas. This high threshold energy is attributed to the formation of a fluorocarbon layer that protects the a-C:H films from ion-enhanced etching.

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Zhou, Yingliang, Hanyang Li, Ji-Eun Jung, Sang Ki Nam, and Vincent M. Donnelly. "Effects of N₂ and O₂ plasma treatments of quartz surfaces exposed to H₂ plasmas." Journal of Vacuum Science & Technology A 40, no. 5 (September 2022): 053002. http://dx.doi.org/10.1116/6.0001896.

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This paper presents a study of methods for reducing the erosion of SiO2 in a high-power density (10–40 W/cm3), purely inductive H2/Ar plasma, using a toroidal transformer-coupled plasma source operated at 0.5 Torr. Quartz samples were exposed to plasma densities of 1–3 × 1013 cm−3 and H atom temperatures of 4000–8000 K [electron densities and H translational temperatures were measured by Stark and Doppler broadening of H Balmer-β (Hβ) emission at 486.1 nm]. Laser interferometry was employed to monitor time-resolved temperatures of the quartz substrate. Etching rates were measured by stylus profilometry, and roughness was quantified by atomic force microscopy (AFM). For 5 min discontinuous H2/Ar plasma exposure (0.5 Torr, 16 W/cm3, 1 min plasma-on, 9 min plasma-off per cycle with five cycles), the etching rate during the plasma-on time was 224 nm/min. This was much higher than the 16 nm/min rate observed for a continuous 1 h H2/Ar plasma exposure. This trend was ascribed to the higher substrate temperatures reached with continuous plasma operation and a negative dependence of the etching rate on temperature, described by an activation energy of roughly −5 kcal/mol. When exposure to 1 min H2/Ar plasmas was alternated with 1 min O2/Ar plasma treatments and 12 min plasma-off periods, the etching rate was reduced to near-zero and the extent of surface roughness was reduced by at least fivefold. N2/Ar plasma treatments were less effective in reducing the etching rate (to 57 nm/min), while the roughness to the surface caused by exposure to the H2/Ar 1 min plasmas was nearly eliminated. A mechanism for the erosion process is proposed, involving the penetration of H atoms below the surface where they insert into Si–O–Si linkages to form SiH and SiOH groups. This opening of the SiO2 network allows easier penetration of H, further bond breakage, and crack propagation that eventually leads to the shedding of small silica particles. Periodic exposure to O atoms hydroxalizes these subsurface regions and subsequently reforms Si–O–Si linkages, accompanied by the formation of H2O that presumably diffuses to the surface and desorbs.

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Kawasaki, Ryohei, Kenta Irikura, Hitoshi Habuka, Yoshinao Takahashi, and Tomohisa Kato. "Non-Plasma Dry Etcher Design for 200 mm-Diameter Silicon Carbide Wafer." Materials Science Forum 1004 (July 2020): 167–72. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.167.

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For improving the productivity of the semiconductor silicon carbide power devices, a very large diameter wafer process was studied, particularly for the non-plasma wafer etching using the chlorine trifluoride gas. Taking into account the motion of heavy gas, such as the chlorine trifluoride gas having the large molecular weight, the transport phenomena in the etching reactor were evaluated and designed using the computational fluid dynamics. The simple gas distributor design for a 200-mm-diameter wafer was evaluated in detail in order to uniformly spread the etchant gas over the wide wafer surface.

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Higashi, Seiichiro, Hibiki Kato, Jiawen Yu, Kyohei Matsumoto, and Hiroaki Hanafusa. "(Invited) Atmospheric-Pressure Reactive Thermal Plasma Jet Technology for Decarbonization of Semiconductor Manufacturing." ECS Meeting Abstracts MA2023-02, no. 30 (December 22, 2023): 1546. http://dx.doi.org/10.1149/ma2023-02301546mtgabs.

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Semiconductor market continues to grow and is expected to hit a trillion dollar in 2030. On the other hand, CO2 emission from semiconductor industry has been anticipated to become one of the serious issues regarding carbon neutral commitments. Organic solvent, which is used for cleaning and wet etching processes, is one of the sources to emit CO2 during device manufacturing. They are recycled and reused, nevertheless, huge amount is disposed. Replacing the wet etching by dry process is a quite effective approach, however, the etching rates by conventional plasma etchings are quite low compared to that of organic solutions (~30 µm/s). In this work, we propose an introduction of atmospheric-pressure reactive thermal plasma jet (R-TPJ) to perform rapid heating and etching reaction simultaneously, which markedly enhances the etching rate of photoresist(PR). In the experiment, n-type Si(100) wafer was treated by RCA cleaning and HF, HMDS solutions and PR (TOKYO OHKA KOGYO CO., LTD. TSMR iP-3300 17cP) were spin coated at 4400 rpm and baked at 130 °C for 2 min to from ~ 900-nm-thick PR layer. The R-TPJ was generated by DC arc discharge under atmospheric pressure with a supply current (I) of 20 A between a W cathode and a metal anode separated by electrode spacing (ES) of 2.0 mm. Ar flow rate (f Ar) was varied from 1.0 to 2.0 L/min, and O2 flow rate (f O2) was varied from 0.3 to 3.0 L/min. The samples were linearly moved by a motion stage in front of the R-TPJ with a scanning speed (v) ranging from 20 to 260 mm/s. The working distance (d) was varied from 0.5 to 3.0 mm. The nozzle diameter is 1 mm. An emission line from atomic oxygen radicals was observed at 777nm and its intensity increased with increasing O2 flow rate, accordingly, the etching rate of PR increased in a similar manner. An etching rate of 6.3 µm/s was obtained with the f Ar of 1.0 L/min, f O2 of 1.0 L/min, and d of 1.0 mm. Moreover, by decreasing the working distance d, etching rate increased with an exponential manner, and an etching rate as high as 61.5 µm/s was obtained when d was set at 0.5 mm, as shown in the figure. It is assumed that millisecond heating of PR surface and simultaneous supply of reactive species have realized an ultra-fast etching of PR. The activation energy for PR etching has been reported to be 0.53 eV [1,2], and according to the experimental fitting on Arrhenius plot, the temperature corresponding to the etching rate of 61.5 µm/s is estimated to be ~820 K. In addition, we conducted a heat diffusion simulation considering PR/Si layer structure annealed by R-TPJ. It was suggested that the annealing temperature reached as high as ~800K with the annealing duration of 4ms. These results suggest that ultra-fast etching of PR by R-TPJ offers a new etching concept in millisecond time regime. In conclusion, R-TPJ provides millisecond thermal etching and is a candidate to replace conventional wet etching and will contribute to the decarbonization of semiconductor device manufacturing. [1] K. Yamakawa, M. Hori, T. Goto, S, Den, T. Katagiri, and H. Kano, J. Appl. Phys. 98, 043311 (2005). [2] A. Granier, D. Chereau, K. Henda, R. Safari, and P. Leprince, J. Appl. Phys. 75, 104 (1994). Figure 1

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Lin, Kang-Yi, Christian Preischl, Christian Felix Hermanns, Daniel Rhinow, Hans-Michael Solowan, Michael Budach, Klaus Edinger, and G. S. Oehrlein. "SiO₂ etching and surface evolution using combined exposure to CF₄/O₂ remote plasma and electron beam." Journal of Vacuum Science & Technology A 40, no. 6 (December 2022): 063004. http://dx.doi.org/10.1116/6.0002038.

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Electron-based surface activation of surfaces functionalized by remote plasma appears like a flexible and novel approach to atomic scale etching and deposition. Relative to plasma-based dry etching that uses ion bombardment of a substrate to achieve controlled material removal, electron beam-induced etching (EBIE) is expected to reduce surface damage, including atom displacement, surface roughness, and undesired material removal. One of the issues with EBIE is the limited number of chemical precursors that can be used to functionalize material surfaces. In this work, we demonstrate a new configuration that was designed to leverage flexible surface functionalization using a remote plasma source, and, by combining with electron beam bombardment to remove the chemically reacted surface layer through plasma-assisted electron beam-induced etching, achieve highly controlled etching. This article describes the experimental configuration used for this demonstration that consists of a remote plasma source and an electron flood gun for enabling electron beam-induced etching of SiO2 with Ar/CF4/O2 precursors. We evaluated the parametric dependence of SiO2 etching rate on processing parameters of the flood gun, including electron energy and emission current, and of the remote plasma source, including radiofrequency source power and flow rate of CF4/O2, respectively. Additionally, two prototypical processing cases were demonstrated by temporally combining or separating remote plasma treatment and electron beam irradiation. The results validate the performance of this approach for etching applications, including photomask repair and atomic layer etching of SiO2. Surface characterization results that provide mechanistic insights into these processes are also presented and discussed.

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Ehrhardt, Martin, Pierre Lorenz, Jens Bauer, Robert Heinke, Mohammad Afaque Hossain, Bing Han, and Klaus Zimmer. "Dry Etching of Germanium with Laser Induced Reactive Micro Plasma." Lasers in Manufacturing and Materials Processing 8, no. 3 (June 16, 2021): 237–55. http://dx.doi.org/10.1007/s40516-021-00147-1.

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AbstractHigh-quality, ultra-precise processing of surfaces is of high importance for high-tech industry and requires a good depth control of processing, a low roughness of the machined surface and as little as possible surface and subsurface damage but cannot be realized by laser ablation processes. Contrary, electron/ion beam, plasma processes and dry etching are utilized in microelectronics, optics and photonics. Here, we have demonstrated a laser-induced plasma (LIP) etching of single crystalline germanium by an optically pumped reactive plasma, resulting in high quality etching. A Ti:Sapphire laser (λ = 775 nm, EPulse/max. = 1 mJ, t = 150 fs, frep. = 1 kHz) has been used, after focusing with a 60 mm lens, for igniting a temporary plasma in a CF4/O2 gas at near atmospheric pressure. Typical etching rate of approximately ~ 100 nm / min and a surface roughness of less than 11 nm rms were found. The etching results were studied in dependence on laser pulse energy, etching time, and plasma – surface distance. The mechanism of the etching process is expected to be of chemical nature by the formation of volatile products from the chemical reaction of laser plasma activated species with the germanium surface. This proposed laser etching process can provide new processing capabilities of materials for ultra—high precision laser machining of semiconducting materials as can applied for infrared optics machining.

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Efremov, Alexander M., Sergey A. Smirnov, Vladimir B. Betelin, and Kwang-Ho Kwon. "PLASMA PARAMETERS AND REACTIVE-ION ETCHING KINETICS OF ZnO IN HYDROGEN BROMIDE: THE INFLUENCE OF INERT CARRIER GAS." ChemChemTech 67, no. 12 (November 12, 2024): 86–95. https://doi.org/10.6060/ivkkt.20246712.7081.

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This work discusses the influence of inert carrier gases, Ar and He, on both gas-phase plasma characteristics and ZnO etching rate under typical reactive-ion etching conditions in the hydrogen bromide environment. Plasma diagnostics by Langmuir probes and 0-dimensional plasma modeling allowed one to compare how the content of given carrier gas does influence electrons-and ions-related plasma parameters, kinetics and densities of plasma active species. It was found that the transition toward Ar- or He-rich plasmas a) causes the growth of electron temperature (due to lower electron energy losses in collisions with atomic species); b) reduces plasma electronegativity; and c) results in opposite changes in both ion density and ion flux. The last phenomenon is due to opposite changes in total ionization rates determined by sufficient difference in ionization rate coefficients for Ar and He atoms. Important features of HBr + Ar plasma at 0–80% Ar are also the slower-than-linear fall of Br atom density (due to the intensification of electron impact dissociation for both HBr and Br2 molecules) as well as an increase in H atom density (due to decreasing their loss rate in gas-phase reactions). Etching experiments indicated that the ZnO etching rate is mostly contributed by the ion-assisted chemical reaction while the reaction rate decreases faster compare with the Br atom flux. The corresponding decrease in the effective reaction probability may be related to changes in both ion bombardment intensity and hydrogen passivation effect. For citation: Efremov A.M., Smirnov S.A., Betelin V.B., Kwon K.-H. Plasma parameters and reactive-ion etching kinetics of ZnO in hydrogen bromide: the influence of inert carrier gas. ChemChemTech [Izv. Vyssh. Uchebn. Zaved. Khim. Khim. Tekhnol.]. 2024. V. 67. N 12. P. 86-95. DOI: 10.6060/ivkkt.20246712.7081.

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Yoon, Junho, Jeongyun Lee, and Won Jong Yoo. "Hydrogen-Induced Damage During the Plasma Etching Process." Nano 12, no. 09 (September 2017): 1750112. http://dx.doi.org/10.1142/s1793292017501120.

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As devices scale down, we need to employ higher ion energy in the plasma etching to meet the requirements for critical dimensions. As a result, physical damage can be more severe. Since hydrogen can penetrate deeply into silicon due to its low mass compared to other species, there is a possibility of electrical degradation by deeply penetrated hydrogen. In this study, we demonstrated hydrogen-induced damage from the plasma etching process. Permeated hydrogen from the plasma etching process increases the amount of interface and bulk defects with increasing bias power, resulting in electrical degradation. Improvement of the device performance was possible via process modification using a rapid thermal anneal (RTA) directly after the hydrogen-containing plasma etching process and the hydrogen-free etching process.

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Oehrlein, G. S., P. J. Matsuo, M. F. Doemling, N. R. Rueger, B. E. E. Kastenmeier, M. Schaepkens, Th Standaert, and J. J. Beulens. "Study of plasma - surface interactions: chemical dry etching and high-density plasma etching." Plasma Sources Science and Technology 5, no. 2 (May 1, 1996): 193–99. http://dx.doi.org/10.1088/0963-0252/5/2/012.

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Tang, Zaifeng, Yukun Lv, Kaiqu Ang, Bing Wang, Xiaojun Jiang, Yuwei Wang, Jin Xu, et al. "Investigation of the Etching Resistance of Yttrium Oxyfluoride Coating Deposited via Atmospheric Plasma Spraying Against Cl2/O2 Plasma." Materials 18, no. 9 (April 23, 2025): 1903. https://doi.org/10.3390/ma18091903.

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Chlorine-based plasma is widely used in key etching applications. However, while etching the wafer materials, chlorine plasma can cause damage to the internal components of the etching chamber, which adversely affects the equipment’s lifespan. As a result, selecting appropriate coating materials for the chamber’s internal components is essential for mitigating corrosion. The etch resistance of these coatings directly impacts not only the quality of wafer production but also the operational safety and maintenance cycle of the etching equipment. In this study, three yttrium oxyfluoride coatings with different oxygen contents (3%, 6%, and 9%) were prepared using atmospheric plasma spraying technology. The etch resistance of these YOF coatings, as well as yttrium oxide coating, was systematically investigated under a Cl2/O2 plasma environment. Transmission electron microscopy analysis revealed that at the initial stage, Cl− formed a protective layer on the surface of the YOF coatings, effectively slowing down further etching by Cl−. Among the samples, the YOF 6% coating exhibited the best etching resistance, which is primarily attributed to its higher capacity for Cl− adsorption. Overall, YOF coatings demonstrated excellent resistance in chlorine-based plasma environments, with YOF 6% in particular showing great potential as an ideal protective material for etching chamber components.

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You, Sanghyun, Yu Jong Lee, Heeyeop Chae, and Chang-Koo Kim. "Plasma Etching of SiO2 Contact Holes Using Hexafluoroisopropanol and C4F8." Coatings 12, no. 5 (May 16, 2022): 679. http://dx.doi.org/10.3390/coatings12050679.

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This study presents the feasibility of the use of hexafluoroisopropanol (HFIP) as a substitute to perfluorocarbon (PFC) for the plasma etching of SiO2 to confront the continuous increase in demand for PFC emission reduction. SiO2 etching is conducted in HFIP/Ar and C4F8/Ar plasmas, respectively, and its characteristics are compared. The SiO2 etch rates in the HFIP/Ar plasma are higher compared with those in the C4F8/Ar plasma. The thickness of the steady-state fluorocarbon films formed on the surface of SiO2 are lower in the HFIP/Ar plasma compared with in the C4F8/Ar plasma. Higher SiO2 etch rates and thinner fluorocarbon films in the HFIP/Ar plasma are attributed to the oxygen atoms in HFIP, which generate oxygen radicals that react with the fluorocarbon films to turn into volatile products. Due to the higher dissociation of C-F bonds in CF4 compared with in HFIP, the etch rates of SiO2 in the C4F8/Ar plasma increase more rapidly with the magnitude of the bias voltage compared with those in the HFIP/Ar plasma. The etch profiles of the 200 nm diameter SiO2 contact holes with an aspect ratio of 12 show that fairly anisotropic SiO2 contact hole etching was achieved successfully using the HFIP/Ar plasma.

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46

Tang, Zaifeng, Bing Wang, Kaiqu Ang, Xiaojun Jiang, Yuwei Wang, Jin Xu, Hua Meng, Hongli Chen, Ying Shi, and Linjun Wang. "The Study of the Etching Resistance of YOF Coating Deposited by Atmospheric Plasma Spraying in HBr/O2 Plasma." Coatings 14, no. 11 (November 13, 2024): 1442. http://dx.doi.org/10.3390/coatings14111442.

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Yttrium oxyfluoride (YOF) coatings with different oxygen content were prepared using atmospheric plasma spraying (APS) technology. The etching resistance of the coatings in HBr/O2 plasma was investigated. Shifts in diffraction peaks of the X-ray diffraction, along with XPS analysis conducted before and after etching, demonstrated that Br ions could replace O and F ions and fill the oxygen vacancies after exposure to HBr/O2 plasma, which is supported by the first-principles calculations. Br ions formed a protective layer on the surface of the YOF coating, slowing down further etching by Br ions. By adjusting the oxygen mass fraction in YOF powder, the oxygen vacancy concentration and Br ion filling were regulated to enhance etching resistance. YOF coatings with 6% oxygen content exhibited improved etching resistance compared to YOF coatings with 3% and 9% oxygen content. This improvement was primarily due to the increased Br ion concentration. These findings provide a new approach for developing coatings with enhanced etching resistance.

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47

Jeong, Won-nyoung, Young-seok Lee, Chul-hee Cho, In-ho Seong, and Shin-jae You. "Investigation into SiO2 Etching Characteristics Using Fluorocarbon Capacitively Coupled Plasmas: Etching with Radical/Ion Flux-Controlled." Nanomaterials 12, no. 24 (December 15, 2022): 4457. http://dx.doi.org/10.3390/nano12244457.

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SiO2 etching characteristics were investigated in detail. Patterned SiO2 was etched using radio-frequency capacitively coupled plasma with pulse modulation in a mixture of argon and fluorocarbon gases. Through plasma diagnostic techniques, plasma parameters (radical and electron density, self-bias voltage) were also measured. In this work, we identified an etching process window, where the etching depth is a function of the radical flux. Then, pulse-off time was varied in the two extreme cases: the lowest and the highest radical fluxes. It was observed that increasing pulse-off time resulted in an enhanced etching depth and the reduced etching depth respectively. This opposing trend was attributed to increasing neutral to ion flux ratio by extending pulse-off time within different etching regimes.

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Li, Jie, Laurent Souriau, Shreya Kundu, Philippe Bezard, and Frederic Lazzarino. "Plasma Etch of IGZO Thin Film and IGZO/SiO₂ Interface Diffusion in Inductively Coupled CH₄/Ar Plasmas." ECS Meeting Abstracts MA2024-02, no. 20 (November 22, 2024): 1788. https://doi.org/10.1149/ma2024-02201788mtgabs.

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InGaZnO (IGZO) has recently gained considerable attention as a promising alternative channel material for semiconductor devices. Thoroughly investigating and precisely controlling the manufacturing processes, including plasma etching of IGZO material, become essential for the fabrication of IGZO-channel devices. In this work the etching characteristics of IGZO thin films were systemically investigated in inductively coupled CH4/Ar plasmas with various gas ratios, bias voltages, and surface temperatures. The ion flux in CH4/Ar plasmas were analyzed using bias power and voltage, and the relative densities of CH and H radicals were quantified through optical actinometry. The change in the density of CH3 radicals, considered as the primary etchant, is also estimated based on plasma kinetics analysis. O2 plasma step was applied after CH4/Ar plasma to mitigate hydrocarbon deposition during CH4/Ar plasma processing. At low CH4 ratios the IGZO etch rate increases with a higher CH4 proportion, aligning with the ascending trend of CH3 radical density, which suggests that CH3 radical density acts as a limiting factor (radical-limited regime). However, IGZO etch rate decreases at high CH4 ratios, corresponding to the reduction in ion flux, which indicates that ion flux becomes a limiting factor in this ion-limited regime. IGZO etch rate shows a linear relationship with bias voltage and follows the Arrhenius equation with varying surface temperature in plasmas without bias voltage. A spontaneous etch rate model was proposed for radical-limited etch regime. In this model, the etch rate is determined by CH3 radical density and IGZO surface reactivity, where both ion energy and surface temperature play important roles. IGZO thin film was deposited on SiO2 during the fabrication of a three-dimensional ferroelectric field-effect transistor (FerroFET) device, and the interaction between IGZO and SiO2 in CH4/Ar plasmas was investigated using time-of-flight secondary ion mass spectrometry. The efficacy of removing IGZO atoms that had diffused into the below SiO2 network was enhanced when subjected to CH4/Ar plasma with a bias voltage compared to the process without bias voltage. However, exposure to CH4/Ar plasma resulted in a deeper diffusion of IGZO atoms into SiO2 network, primarily attributed to ion bombardment rather than elevated surface temperature. A significant improvement in surface smoothness was achieved after IGZO and SiO2 etch by introducing BCl3 into the SiO2 etching chemistry.

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Hladkovskiy, V. V., and O. A. Fedorovich. "Spectroscopic Studies of RF Discharge Plasma at Plasma-Chemical Etching of Gallium Nitride Epitaxial Structures." Ukrainian Journal of Physics 62, no. 3 (March 2017): 208–13. http://dx.doi.org/10.15407/ujpe62.03.0208.

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Li, Qingzhi, Yubin Zhang, Zhaohua Shi, Weihua Li, and Xin Ye. "Effect of Plasma Etching Depth on Subsurface Defects in Quartz Crystal Elements." Crystals 13, no. 10 (October 11, 2023): 1477. http://dx.doi.org/10.3390/cryst13101477.

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After the plasma etching of quartz crystal, the crystal lattice underwent changes in response to the length of plasma etching time. The lattice arrangement of quartz crystal was the most orderly after plasma etching for 1000 nm, and with the increase in etching time, the lattice arrangement became less orderly again. The weak absorption value of quartz crystal was also consistent with this conclusion. In this paper, we investigated the effect of lattice changes on the damage threshold of quartz crystals by characterizing the quartz crystals using Reactive Ion Etching (RIE). We also examined the effect of lattice variation on roughness and surface topography.

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Journal articles on the topic 'Plasma etching'

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