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Relevant bibliographies by topics / Pn junction

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Academic literature on the topic 'Pn junction'

Author: Grafiati

Published: 4 June 2021

Last updated: 25 July 2025

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Journal articles on the topic "Pn junction"

1

Edwards, Hal. "Applications of SCM and SCS to Failure Analysis." EDFA Technical Articles 3, no. 2 (2001): 15–17. http://dx.doi.org/10.31399/asm.edfa.2001-2.p015.

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Abstract Scanning capacitance spectroscopy (SCS) is a new way to use a scanning capacitance microscope (SCM) to delineate pn junctions in silicon devices. SCS produces two-dimensional pn junction maps with features as small as 10 nm. It can also estimate the pn junction depletion width and hence doping levels near the junction. This article explains how SCS and SCMs allow a whole new regime of doping-related phenomena to be explored in Si devices and ICs.

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Paračka, Petr, Pavel Koktavý, and Robert Macku. "PN Junction Defects Detection in Solar Cells Using Noise Diagnostics." Key Engineering Materials 465 (January 2011): 322–25. http://dx.doi.org/10.4028/www.scientific.net/kem.465.322.

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PN junction is one of the most important parts of solar cells. Its quality affects lifetime and efficiency of solar cells. Local defects which appear in PN junctions during the manufacture process are very important from this point of view. These are caused by localized areas with high donor or acceptor doping agents, impurities, dislocations or other mechanisms which effect in lower breakdown voltage of PN junction in reverse bias. Several base methods can be used for solar cells nondestructive diagnostics. Measuring methods of low-band noise current effective value with reverse bias junction

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3

Chavez, R., A. Becker, V. Kessler, et al. "A new thermoelectric concept using large area PN junctions." MRS Proceedings 1543 (2013): 3–8. http://dx.doi.org/10.1557/opl.2013.954.

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ABSTRACTA new thermoelectric concept using large area silicon PN junctions is experimentally demonstrated. In contrast to conventional thermoelectric generators where the n-type and p-type semiconductors are connected electrically in series and thermally in parallel, we demonstrate a large area PN junction made from densified silicon nanoparticles that combines thermally induced charge generation and separation in a space charge region with the conventional Seebeck effect by applying a temperature gradient parallel to the PN junction. In the proposed concept, the electrical contacts are made a

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Wen, Sihai, and D. D. L. Chung. "Rectifying and thermocouple junctions based on Portland cement." Journal of Materials Research 16, no. 7 (2001): 1989–93. http://dx.doi.org/10.1557/jmr.2001.0272.

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Rectifying and thermocouple junctions have been achieved using electrically dissimilar Portland cement pastes. The preferred junction is a pn-junction involving steel fiber cement paste (n-type) and carbon fiber cement paste (p-type). For this junction, the thermocouple sensitivity is 70 εV/°C.

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Sarmasov, S. N., R. Sh Rahimov, and T. Sh Abdullayev. "THE EFFECT OF OXYGEN ADSORPTION ON THE CONDUCTIVITY OF PBTE FILMS." EurasianUnionScientists 6, no. 8(77) (2020): 21–23. http://dx.doi.org/10.31618/esu.2413-9335.2020.6.77.1001.

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The effect of oxygen adsorption on the conductivity of PbTe films is studied. Pn junctions based on PbTe films are photosensitive in the IR spectral region with a maximum photosensitivity of 𝜆𝑚𝑎𝑥 microns. The tunneling mechanism of current flow through the pn junction is shown.

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Awaya, Keisuke, Akihide Takashiba, Takaaki Taniguchi, Michio Koinuma, Tatsumi Ishihara, and Shintaro Ida. "Photoelectrochemical properties of a well-structured 1.3 nm-thick pn junction crystal." Chemical Communications 55, no. 31 (2019): 4586–88. http://dx.doi.org/10.1039/c9cc01039d.

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A 1.3 nm-thick nickel hydroxide (p-type, 0.5 nm)/titania (n-type, 0.8 nm) pn junction prepared by lamination of nanosheets improved the onset potential for photoelectrochemical oxidation and increased the photooxidation current, indicating that ultrathin pn junctions suppress the recombination of photo-generated carriers.

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Cheng, Calvin H. W., and Mark C. Lonergan. "A Conjugated Polymer pn Junction." Journal of the American Chemical Society 126, no. 34 (2004): 10536–37. http://dx.doi.org/10.1021/ja046880p.

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Cunha, Victor De Rezende, Daniel Neves Micha, Rudy Massami Sakamoto Kawabata, Luciana Dornelas Pinto, Mauricio Pamplona Pires, and Patricia Lustoza De Souza. "Optimization of the InGaP Top Junction of Triple Junction Solar Cell for Spatial Application." Journal of Integrated Circuits and Systems 14, no. 1 (2019): 1–5. http://dx.doi.org/10.29292/jics.v14i1.62.

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Electrical current mismatching is a well-known limitation of triple junction solar cells that lowers the final conversion efficiency. Several solutions have been proposed to face this issue, including the insertion of a multiple quantum well structure as the intermediate junction’s active material. With a better matching in the current among the junctions, the total current increases, thus modifying the working conditions of the overall device. In this way, the InGaP top junction needs to be optimized to such new condition. In this work, numerical simulations were carried out aiming the enlarg

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9

Wen, Sihai, and D. D. L. Chung. "Electrical behavior of cement-based junctions including the pn-junction." Cement and Concrete Research 31, no. 1 (2001): 129–33. http://dx.doi.org/10.1016/s0008-8846(00)00361-6.

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Liang, Chao, Chunli Zhang, Weiqiu Chen, and Jiashi Yang. "Effects of Magnetic Fields on PN Junctions in Piezomagnetic–Piezoelectric Semiconductor Composite Fibers." International Journal of Applied Mechanics 12, no. 08 (2020): 2050085. http://dx.doi.org/10.1142/s1758825120500854.

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We study the electromechanical and electrical behaviors of a PN junction in a multiferroic composite fiber, consisting of a piezoelectric semiconductor (PS) layer between two piezomagnetic (PM) layers, under a transverse magnetic field. Based on the derived one-dimensional model for multiferroic composite semiconductor structures, we obtain the linear analytical solution for the built-in potential and electric field in the junction when there is no applied voltage between the two ends of the fiber. When a bias voltage is applied over the two ends of the fiber, a nonlinear numerical analysis is

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Dissertations / Theses on the topic "Pn junction"

1

Kayes, Brendan Melville Atwater H. A. Painter Oskar J. Atwater H. A. Lewis Nathan Saul. "Radial pn junction, wire array solar cells /." Diss., Pasadena, Calif. : Caltech, 2009. http://resolver.caltech.edu/CaltechETD:etd-09222008-173738.

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Limb, Jae Boum. "Design, fabrication and characterization of III-nitride PN junction devices." Diss., Available online, Georgia Institute of Technology, 2007, 2007. http://etd.gatech.edu/theses/available/etd-07022007-151130/.

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Thesis (Ph. D.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2008.<br>William Doolittle, Committee Member ; Joy Laskar, Committee Member ; Russell Dupuis, Committee Chair ; David Citrin, Committee Member ; Srinivas Garimella, Committee Member.

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Hontgas, Christopher Hayden. "Investigation of PN Junction Delineation Resolution using Electron Beam Induced Current." Doctoral diss., University of Central Florida, 2007. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/3327.

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This dissertation will investigate electron beam induced current (EBIC) for determining semiconductor material and device parameters. While previous experimental work on PN junction delineation using EBIC with the scanning electron microscope has resulted in resolution to approximately 10 nm, theoretical study shows the potential use of EBIC for higher resolution (nanometer) PN junction and FET channel length delineation using the transmission electron microscope. Theoretical arguments using computer simulations of electron beam generation volume, collection probability and EBIC were performed

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Ska-Hiish, Manuel Dave Hokororo. "A performance analysis of planar and radial pn junction based photovoltaic solar cells." Thesis, University of British Columbia, 2013. http://hdl.handle.net/2429/45418.

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In this thesis, the performance of both planar and radial pn junction based photovoltaic solar cells are examined for a broad range of materials. The materials considered include silicon, gallium arsenide, germaniun, indium nitride, and gallium nitride. The photovoltaic solar cell performance model of Kayes et al. [B.M. Kayes, H.A. Atwater, and N.S. Lewis, Journal of Applied Physics, volume 97, pp. 14302-1-11, 2005], is employed for the purposes of this analysis. Three solar cell performance metrics, evaluated using the et al., model are considered in this analysis: (1) the short-circui

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5

Klimíček, Jaromír. "Šumová diagnostika PN přechodu usměrňovacích diod." Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2008. http://www.nusl.cz/ntk/nusl-217439.

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The thesis deals with the design of the measurement installation, which is intended for the microplasma noise measurements. This noise is being generated in the defective parts of the PN junction. The goal of this work is to design the measurement installation and to realize the fully functional workbench for the analogical noise related measurements and to determine the transfer function of the measurement installation. Main part of the work is to choose proper parameters for the measuring devices and to design the software intended for the automated measurements. Consequently, we have to pro

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Brasseur, Paul. "Mach Zehnder interferometry and coherent manipulation of the valley in a graphene PN junction." Thesis, université Paris-Saclay, 2020. http://www.theses.fr/2020UPASP012.

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L’optique quantique électronique, i.e. la réalisation de l’analogue électronique d’expériences d’optique quantique, constitue un champ de recherche récent, en plein développement, et offrant des perspectives intéressantes pour l’informatique quantique. Dans ce cadre, l’un des enjeux est la réalisation de bits quantiques en utilisant des états électroniques, ainsi que la formation d’états électroniques intriqués, éléments de bases pour réaliser des calculs quantiques plus élaborés. Les expériences menées jusqu’à présent dans des hétérostructures semi-conductrices de GaAs/AlGaAs ont mis en évide

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El-Amin, Ammaarah Haleemah. "Investigation of Semitransparent Cu2O/ZnO Based Heterostructure Diodes for Memory and Related Applications." University of Toledo / OhioLINK, 2014. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1388761525.

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8

Derishev, Anton. "Měření kapacity vysokonapěťových přechodů PN." Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2015. http://www.nusl.cz/ntk/nusl-221152.

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The work deals with the capacitance measurement of high-voltage PN junctions. The work is divided into theoretical and practical parts. The theoretical part presents insight into the fundamental properties of PN junctions and methods for measuring of the capacitance of PN junctions, primarily by C-V measurement. In the practical part, several kinds of measuring circuits are introduced and a suitable method of measurement is found. The calculations of basic parameters - the width of the base and resistivity are presented and discussed. The results were compared with the values obtained by calcu

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9

Chavez, Ruben [Verfasser], and Roland [Akademischer Betreuer] Schmechel. "High Temperature Thermoelectric Device Concept Using Large Area PN Junction / Ruben Chavez. Betreuer: Roland Schmechel." Duisburg, 2015. http://d-nb.info/107979350X/34.

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10

Al, Imam Shahriar. "Simulation of a 2D pn junction in silicon thin film incorporating quantum transport for carriers." Thesis, Connect to online version, 2006. http://proquest.umi.com/pqdweb?did=1251871411&sid=3&Fmt=2&clientId=10306&RQT=309&VName=PQD.

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Books on the topic "Pn junction"

1

Neudeck, Gerold W. The PN junction diode. 2nd ed. Addison-Wesley, 1988.

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2

P, Leon Rosa, Arrison Anne, and United States. National Aeronautics and Space Administration., eds. A V-grooved AlGaAs/GaAs passivated PN junction. National Aeronautics and Space Administration, 1987.

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3

P, Leon Rosa, Arrison Anne, and United States. National Aeronautics and Space Administration., eds. A V-grooved AlGaAs/GaAs passivated PN junction. National Aeronautics and Space Administration, 1987.

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4

Christian, Fazi, Parsons James D, and United States. National Aeronautics and Space Administration., eds. Fast risetime reverse bias pulse failures in SiC PN junction diodes. National Aeronautics and Space Administration, 1996.

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5

Kitai, Adrian. Principles of Solar Cells, LEDs and Diodes: The role of the PN junction. John Wiley & Sons, Ltd, 2011. http://dx.doi.org/10.1002/9781119974543.

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6

The PN junction diode. 2nd ed. Addison-Wesley, 1989.

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A V-grooved AlGaAs/GaAs passivated PN junction. National Aeronautics and Space Administration, 1987.

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8

Neudeck, George W. The PN Junction Diode, Volume II (2nd Edition). Prentice Hall, 1988.

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9

Fast risetime reverse bias pulse failures in SiC PN junction diodes. National Aeronautics and Space Administration, 1996.

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10

Solutions Manual to the Pn Junction Diode 2e ( = Volume 2 in the. Addison Wesley, 1989.

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Book chapters on the topic "Pn junction"

1

Di Natale, Corrado. "PN Junction." In Introduction to Electronic Devices. Springer Nature Switzerland, 2023. http://dx.doi.org/10.1007/978-3-031-27196-0_4.

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2

Williams, B. W. "The pn Junction." In Power Electronics. Macmillan Education UK, 1987. http://dx.doi.org/10.1007/978-1-349-18525-2_2.

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3

Winnacker, Albrecht. "The pn-Junction." In The Physics Behind Semiconductor Technology. Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-031-10314-8_9.

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4

Evstigneev, Mykhaylo. "PN Junction Diode." In Introduction to Semiconductor Physics and Devices. Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-031-08458-4_11.

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Watson, John. "The pn Junction Diode." In Mastering Electronics. Macmillan Education UK, 1986. http://dx.doi.org/10.1007/978-1-349-08533-0_7.

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Watson, John. "The pn Junction Diode." In Mastering Electronics. Macmillan Education UK, 1996. http://dx.doi.org/10.1007/978-1-349-14210-1_8.

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Watson, John. "The pn junction diode." In Mastering Electronics. Macmillan Education UK, 1990. http://dx.doi.org/10.1007/978-1-349-11911-0_7.

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8

Böer, Karl W. "The pn-Junction with Light." In Springer Series in Solid-State Sciences. Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-642-02236-4_10.

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9

Böer, Karl W. "The pn-Junction with Light." In Survey of Semiconductor Physics. Springer Netherlands, 1992. http://dx.doi.org/10.1007/978-94-011-2912-1_23.

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Böer, Karl W. "The pn-Junction with Light." In Handbook of the Physics of Thin-Film Solar Cells. Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-36748-9_32.

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Conference papers on the topic "Pn junction"

1

Jeyaselvan, Vadivukkarasi, and Shankar Kumar Selvaraja. "Silicon Ring Modulator Insertion Loss and Electro-optic Bandwidth optimisation through junction engineering." In CLEO: Applications and Technology. Optica Publishing Group, 2024. http://dx.doi.org/10.1364/cleo_at.2024.jth2a.20.

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2

Hamouda, Mahmoud, Carine Mankarious, Aser El-Dahshan, et al. "High-efficiency PAM4 ring modulator using W-Shaped PN junction." In Optical Interconnects and Packaging 2025, edited by Henning Schröder and Ray T. Chen. SPIE, 2025. https://doi.org/10.1117/12.3044168.

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3

Zhang, Yu, Hong Deng, and Wim Bogaerts. "Pure phase modulation of a PN-junction traveling wave modulator circuit." In 2024 IEEE Photonics Conference (IPC). IEEE, 2024. https://doi.org/10.1109/ipc60965.2024.10799659.

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El-Dahshan, Aser, Mahmoud Hamouda, Carine Mankarious, et al. "W-Shaped PN junction for high efficiency and fast optical phase shifters." In Silicon Photonics XX, edited by Graham T. Reed and Jonathan Bradley. SPIE, 2025. https://doi.org/10.1117/12.3044106.

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Chae, Christopher, Dong-Su Yu, Kingsley Egbo, Andriy Zakutayev, Hongping Zhao, and Jinwoo Hwang. "Understanding and controlling the atomic structure at NiO/Ga2O3 PN junction interface." In Oxide-based Materials and Devices XVI, edited by Féréchteh H. Teherani and David J. Rogers. SPIE, 2025. https://doi.org/10.1117/12.3049837.

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Liu, Yumeng, Zhengfang Fan, Jianyong Wei, Yizhuo Wang, Zhijuan Su, and Yaping Dan. "Positive and Negative Photoresponses in MoS2 Flakes Photogated by PN Junction Diode." In 2025 9th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). IEEE, 2025. https://doi.org/10.1109/edtm61175.2025.11040215.

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Shetewy, Abdou E., Weizhong Zhang, Menglong He, and Kambiz Jamshidi. "Optical self-pulsing oscillations in passive silicon microring resonator on doped PN junction." In 2025 16th German Microwave Conference (GeMiC). IEEE, 2025. https://doi.org/10.23919/gemic64734.2025.10979167.

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8

Edwards, Hal. "pn Junction Delineation in Si Devices Using Scanning Capacitance Spectroscopy." In ISTFA 2000. ASM International, 2000. http://dx.doi.org/10.31399/asm.cp.istfa2000p0529.

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Abstract The scanning capacitance microscope is a carrier-sensitive imaging tool based upon the well-known scanning-probe microscope (SCM). Scanning capacitance spectroscopy (SCS) is useful to utilize an SCM to delineate pn junctions in Si devices. This article reports the applications of SCS to Si devices such as CMOS and BiCMOS. SCS is shown to resolve device features on the 10 nm scale for several technologies. Ongoing work includes verifying the reproducibility of SCS measurements and using physical modeling to support the empirical assignment of depletion region width and electrical pn ju

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Phang, J. C. H., S. Kolachina, and D. S. H. Chan. "Single Contact Electron Beam Induced Current Microscopy for Failure Analysis of Integrated Circuits." In ISTFA 1997. ASM International, 1997. http://dx.doi.org/10.31399/asm.cp.istfa1997p0215.

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Abstract Single Contact Electron Beam Induced Current (SCEBIC) microscopy, a new junction imaging technique suitable for visualization of unconnected pn junctions in integrated circuits is presented. By using the substrate contact alone of a die, the SCEBIC approach eliminates the need to connect a junction to the imaging electronics as is done in the conventional Electron Beam Induced Current (EBIC) technique. The principles of SCEBIC are discussed and experimental data which validate the SCEBIC approach for imaging of pn junctions is presented. Examples of SCEBIC images are presented and app

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Falconi, Christian, Corrado Di Natale, Giuseppe Ferri, and Arnaldo D'Amico. "SINGLE PN JUNCTION PTAT WITHOUT SWITCHES." In Proceedings of the 5th Italian Conference — Extended to Mediterranean Countries. WORLD SCIENTIFIC, 2000. http://dx.doi.org/10.1142/9789812792013_0068.

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Reports on the topic "Pn junction"

1

Neudeck, Philip G., and Christian Fazi. Positive Temperature Coefficient of Breakdown Voltage in 4H-SiC PN Junction Rectifiers. Defense Technical Information Center, 1998. http://dx.doi.org/10.21236/ada359099.

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Axness, Carl L., Eric Richard Keiter, and Bert Kerr. Analytic 1D pn junction diode photocurrent solutions following ionizing radiation and including time-dependent changes in the carrier lifetime. Office of Scientific and Technical Information (OSTI), 2011. http://dx.doi.org/10.2172/1018469.

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David P. Norton, Stephen Pearton, and Fan Ren. ZnO PN Junctions for Highly-Efficient, Low-Cost Light Emitting Diodes. Office of Scientific and Technical Information (OSTI), 2007. http://dx.doi.org/10.2172/923721.

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Shahedipour-Sandvik, Fatemeh. Final Report for ARPA-E PNDIODES "PN Junctions by Ion Implantation" Project. Office of Scientific and Technical Information (OSTI), 2022. http://dx.doi.org/10.2172/1996819.

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