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Relevant bibliographies by topics / Pn junction

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Academic literature on the topic 'Pn junction'

Author: Grafiati

Published: 4 June 2021

Last updated: 11 February 2022

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Journal articles on the topic "Pn junction"

1

Paračka, Petr, Pavel Koktavý, and Robert Macku. "PN Junction Defects Detection in Solar Cells Using Noise Diagnostics." Key Engineering Materials 465 (January 2011): 322–25. http://dx.doi.org/10.4028/www.scientific.net/kem.465.322.

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PN junction is one of the most important parts of solar cells. Its quality affects lifetime and efficiency of solar cells. Local defects which appear in PN junctions during the manufacture process are very important from this point of view. These are caused by localized areas with high donor or acceptor doping agents, impurities, dislocations or other mechanisms which effect in lower breakdown voltage of PN junction in reverse bias. Several base methods can be used for solar cells nondestructive diagnostics. Measuring methods of low-band noise current effective value with reverse bias junction were used in this paper. This method allows detection of local defects and volume degradation in PN junctions of solar cells and it can be used for detection of microplasma noise. This noise is an impulse noise and it is caused by local avalanche breakdowns in small area of the junction. It can be recognized by two or more level random square current pulses with constant height, random appearance time and random pulse length. Information about these effects can be used in noise diagnostics of structural defects of PN junctions and then it can be used for quality and lifetime estimation of samples with these parameters.

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Chavez, R., A. Becker, V. Kessler, M. Engenhorst, N. Petermann, H. Wiggers, G. Schierning, and R. Schmechel. "A new thermoelectric concept using large area PN junctions." MRS Proceedings 1543 (2013): 3–8. http://dx.doi.org/10.1557/opl.2013.954.

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ABSTRACTA new thermoelectric concept using large area silicon PN junctions is experimentally demonstrated. In contrast to conventional thermoelectric generators where the n-type and p-type semiconductors are connected electrically in series and thermally in parallel, we demonstrate a large area PN junction made from densified silicon nanoparticles that combines thermally induced charge generation and separation in a space charge region with the conventional Seebeck effect by applying a temperature gradient parallel to the PN junction. In the proposed concept, the electrical contacts are made at the cold side eliminating the need for contacts at the hot side allowing temperature gradients greater than 100K to be applied. The investigated PN junction devices are produced by stacking n-type and p-type nanopowder prior to a densification process. The nanoparticulate nature of the densified PN junction lowers thermal conductivity and increases the intraband traps density which we propose is beneficial for transport across the PN junction thus enhancing the thermoelectric properties. A fundamental working principle of the proposed concept is suggested, along with characterization of power output and output voltages per temperature difference that are close to those one would expect from a conventional thermoelectric generator.

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Wen, Sihai, and D. D. L. Chung. "Rectifying and thermocouple junctions based on Portland cement." Journal of Materials Research 16, no. 7 (July 2001): 1989–93. http://dx.doi.org/10.1557/jmr.2001.0272.

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Rectifying and thermocouple junctions have been achieved using electrically dissimilar Portland cement pastes. The preferred junction is a pn-junction involving steel fiber cement paste (n-type) and carbon fiber cement paste (p-type). For this junction, the thermocouple sensitivity is 70 εV/°C.

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Cheng, Calvin H. W., and Mark C. Lonergan. "A Conjugated Polymer pn Junction." Journal of the American Chemical Society 126, no. 34 (September 2004): 10536–37. http://dx.doi.org/10.1021/ja046880p.

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Awaya, Keisuke, Akihide Takashiba, Takaaki Taniguchi, Michio Koinuma, Tatsumi Ishihara, and Shintaro Ida. "Photoelectrochemical properties of a well-structured 1.3 nm-thick pn junction crystal." Chemical Communications 55, no. 31 (2019): 4586–88. http://dx.doi.org/10.1039/c9cc01039d.

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A 1.3 nm-thick nickel hydroxide (p-type, 0.5 nm)/titania (n-type, 0.8 nm) pn junction prepared by lamination of nanosheets improved the onset potential for photoelectrochemical oxidation and increased the photooxidation current, indicating that ultrathin pn junctions suppress the recombination of photo-generated carriers.

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Sarmasov, S. N., R. Sh Rahimov, and T. Sh Abdullayev. "THE EFFECT OF OXYGEN ADSORPTION ON THE CONDUCTIVITY OF PBTE FILMS." EurasianUnionScientists 6, no. 8(77) (September 16, 2020): 21–23. http://dx.doi.org/10.31618/esu.2413-9335.2020.6.77.1001.

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The effect of oxygen adsorption on the conductivity of PbTe films is studied. Pn junctions based on PbTe films are photosensitive in the IR spectral region with a maximum photosensitivity of 𝜆𝑚𝑎𝑥 microns. The tunneling mechanism of current flow through the pn junction is shown.

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Wen, Sihai, and D. D. L. Chung. "Electrical behavior of cement-based junctions including the pn-junction." Cement and Concrete Research 31, no. 1 (January 2001): 129–33. http://dx.doi.org/10.1016/s0008-8846(00)00361-6.

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Cunha, Victor De Rezende, Daniel Neves Micha, Rudy Massami Sakamoto Kawabata, Luciana Dornelas Pinto, Mauricio Pamplona Pires, and Patricia Lustoza De Souza. "Optimization of the InGaP Top Junction of Triple Junction Solar Cell for Spatial Application." Journal of Integrated Circuits and Systems 14, no. 1 (April 29, 2019): 1–5. http://dx.doi.org/10.29292/jics.v14i1.62.

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Electrical current mismatching is a well-known limitation of triple junction solar cells that lowers the final conversion efficiency. Several solutions have been proposed to face this issue, including the insertion of a multiple quantum well structure as the intermediate junction’s active material. With a better matching in the current among the junctions, the total current increases, thus modifying the working conditions of the overall device. In this way, the InGaP top junction needs to be optimized to such new condition. In this work, numerical simulations were carried out aiming the enlargement of the electrical current density of an InGaP pn junction to achieve the proper current matching in triple junction solar cell for spatial applications. The optimized structure has been grown in a GaAs substrate and characterized as a single junction solar cell. Although the measured short circuit current density and conversion efficiency are still well below the theoretically predicted values, processing improvement should lead to adequate cell performance.

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Hickman, R., J. M. Van Hove, P. P. Chow, J. J. Klaassen, A. M. Wowchak, C. J. Polley, D. J. King, et al. "GaN PN junction issues and developments." Solid-State Electronics 44, no. 2 (February 2000): 377–81. http://dx.doi.org/10.1016/s0038-1101(99)00245-2.

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Riordan, M., and L. Hoddeson. "The origins of the pn junction." IEEE Spectrum 34, no. 6 (June 1997): 46–51. http://dx.doi.org/10.1109/6.591664.

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Dissertations / Theses on the topic "Pn junction"

1

Kayes, Brendan Melville Atwater H. A. Painter Oskar J. Atwater H. A. Lewis Nathan Saul. "Radial pn junction, wire array solar cells /." Diss., Pasadena, Calif. : Caltech, 2009. http://resolver.caltech.edu/CaltechETD:etd-09222008-173738.

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Limb, Jae Boum. "Design, fabrication and characterization of III-nitride PN junction devices." Diss., Available online, Georgia Institute of Technology, 2007, 2007. http://etd.gatech.edu/theses/available/etd-07022007-151130/.

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Thesis (Ph. D.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2008.
William Doolittle, Committee Member ; Joy Laskar, Committee Member ; Russell Dupuis, Committee Chair ; David Citrin, Committee Member ; Srinivas Garimella, Committee Member.

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Hontgas, Christopher Hayden. "Investigation of PN Junction Delineation Resolution using Electron Beam Induced Current." Doctoral diss., University of Central Florida, 2007. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/3327.

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This dissertation will investigate electron beam induced current (EBIC) for determining semiconductor material and device parameters. While previous experimental work on PN junction delineation using EBIC with the scanning electron microscope has resulted in resolution to approximately 10 nm, theoretical study shows the potential use of EBIC for higher resolution (nanometer) PN junction and FET channel length delineation using the transmission electron microscope. Theoretical arguments using computer simulations of electron beam generation volume, collection probability and EBIC were performed and are presented for the purpose of determining EBIC use in a 300 keV transmission electron microscope (TEM) for PN junction depth determination. Measured results indicate that by measuring thin semiconductor samples with high surface recombination velocity and by using a narrow, high-energy electron beam in the STEM mode of a transmission electron microscope, nanometer resolution may be possible. The practical and experimental limits of beam energy and semiconducting material thermal damage will be discussed.
Ph.D.
School of Electrical Engineering and Computer Science
Engineering and Computer Science
Electrical Engineering PhD

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Ska-Hiish, Manuel Dave Hokororo. "A performance analysis of planar and radial pn junction based photovoltaic solar cells." Thesis, University of British Columbia, 2013. http://hdl.handle.net/2429/45418.

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In this thesis, the performance of both planar and radial pn junction based photovoltaic solar cells are examined for a broad range of materials. The materials considered include silicon, gallium arsenide, germaniun, indium nitride, and gallium nitride. The photovoltaic solar cell performance model of Kayes et al. [B.M. Kayes, H.A. Atwater, and N.S. Lewis, Journal of Applied Physics, volume 97, pp. 14302-1-11, 2005], is employed for the purposes of this analysis. Three solar cell performance metrics, evaluated using the et al., model are considered in this analysis: (1) the short-circuit current density, (2) the open-circuit voltage, and (3) the efficiency. The results suggest that while planar pn junction based photovoltaic solar cells are sensitive to trapping concentration levels, the radial pn junction based photovoltaic solar cells are relatively insensitive to trapping concentrations. This suggests that in certain cases, such as when there are materials with high concentration of traps, radial pn junction based photovoltaic solar cell offer inherent advantages over their planar counterparts.

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Klimíček, Jaromír. "Šumová diagnostika PN přechodu usměrňovacích diod." Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2008. http://www.nusl.cz/ntk/nusl-217439.

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The thesis deals with the design of the measurement installation, which is intended for the microplasma noise measurements. This noise is being generated in the defective parts of the PN junction. The goal of this work is to design the measurement installation and to realize the fully functional workbench for the analogical noise related measurements and to determine the transfer function of the measurement installation. Main part of the work is to choose proper parameters for the measuring devices and to design the software intended for the automated measurements. Consequently, we have to process the measured waveforms of the microplasma noise, to determine the dependency of the noise on the signal magnitude and to calculate the power spectral noise density. Finally, we have to determine the transfer function of the measurement installation and to design the inversion filter.

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Brasseur, Paul. "Mach Zehnder interferometry and coherent manipulation of the valley in a graphene PN junction." Thesis, université Paris-Saclay, 2020. http://www.theses.fr/2020UPASP012.

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L’optique quantique électronique, i.e. la réalisation de l’analogue électronique d’expériences d’optique quantique, constitue un champ de recherche récent, en plein développement, et offrant des perspectives intéressantes pour l’informatique quantique. Dans ce cadre, l’un des enjeux est la réalisation de bits quantiques en utilisant des états électroniques, ainsi que la formation d’états électroniques intriqués, éléments de bases pour réaliser des calculs quantiques plus élaborés. Les expériences menées jusqu’à présent dans des hétérostructures semi-conductrices de GaAs/AlGaAs ont mis en évidence la possibilité d’encoder l’information dans la charge ou le spin d’un électron, mais la décohérence importante de ces systèmes induit une grande fragilité de ces états quantiques, qui ne peuvent exister qu’en-dessous de 100mK et pour des tensions résiduelles inférieures à 40μV. Cette fragilité rend difficile la fabrication d’états intriqués, et est limitante pour le développement de calculs quantiques complexes. En 2005, la découverte d’un matériau novateur, le graphène, a ouvert de nouvelles perspectives avec la prédiction d’une cohérence de phase plus grande, et, d’autre part, l’existence en plus du spin d’un nouveau degré de liberté, la vallée, donnant accès à de nouvelles possibilités pour encoder l’information. Dans un premier temps, ce travail de thèse porte sur la manipulation cohérente de la vallée, nécessaire à la réalisation d’un bit quantique de vallée dans le graphène. Pour cela est utilisée, en régime Hall quantique, une jonction pn, formée à l’aide de grilles déposées sur un échantillon de graphène encapsulé dans du nitrure de Bohr. Afin d’obtenir un contrôle électrostatique sur la polarisation en vallée des électrons incidents, des grilles locales ont été déposées, à l’intersection de la jonction pn avec le bord physique du graphène. En alliant ce contrôle électrostatique à celui de la phase Aharanov-Bohm, il nous est possible de manipuler de manière cohérente la vallée d’un électron sur l’ensemble de la sphère de Bloch représentant la polarisation en vallée. Dans la suite, la cohérence des états quantiques formés est étudiée grâce à un interféromètre de Mach Zehnder, via l’observation de la dépendance des interférences en fonction de la tension appliquée sur les électrons incidents, et de la température du système. Les états quantiques obtenus sont exceptionnellement résistants, ils persistent au-delà de 1.5K et de 1mV, soit à des énergies près de 20 fois supérieures à celles observées dans le GaAs/AlGaAs.Puis, ce manuscrit décrit l’étude de la longueur de cohérence, correspondant à la distance sur laquelle un électron peut se propager en gardant sa cohérence de phase, ce qui n’avait encore jamais été mesuré dans le graphène. Pour ce faire, la dépendance des interférences vis-à-vis de la température a été mesurée sur trois jonctions pn de longueurs différentes. Une longueur de cohérence a ainsi été extraite pour les deux régimes de décohérence observés ; dont une record, pour le régime à basses températures, de plus de 374μm à 20mK. Pour finir, est investigué un des mécanismes causant la décohérence dans le système : les ondes de spin, se propageant lorsque le cœur du graphène est magnétique. Ainsi, au cours de ce projet, nous avons mis en évidence la possibilité d’encoder de l’information dans la vallée, ouvrant la voie vers un nouveau domaine : la vallée-tronique. D’autre part, la cohérence du système est exceptionnelle, permettant d’envisager la réalisation d’états intriqués grâce à une géométrie de double Mach Zehnder. Cela offre des perspectives prometteuses du point de vue de l’informatique quantique, mais aussi d’un point de vue fondamental avec la possibilité de démontrer pour la première fois, avec des fermions, la validité des prédictions de l’interprétation de Copenhague de la physique quantique dans le cadre du paradoxe EPR
Electron quantum optics, i.e. the realization of the electronic analogue of quantum optics experiments, represents a developing and recent research field, offering interesting perspectives for quantum computing. In this context, one of the main stakes is the achievement of quantum bits using electronic states, as well as the creation of entangled electronic states, which are the building blocks to achieve complex quantum computations. Up to now, the experiments carried out in semi-conducting GaAs/AlGaAs heterostructures exhibited the possibility to encode information in the charge or the spin of an electron, but strong decoherence in these systems implies a great weakness of these quantum states, which survives only below temperatures of 100mK and electrical biases of 40μV. This fragility makes it difficult to achieve entangled states and limits the development of complex quantum computations. In 2005, the discovery of a novel material, graphene, opened new prospects with on one hand the prediction of a larger phase coherence, and on the other hand the existence, in addition to the spin, of a new degree of freedom, named the valley, giving access to new possibilities to encode information. In a first part, this PhD work deals with the coherent manipulation of the valley, which is necessary to achieve a valley quantum bit in graphene. For this aim, we used, in the quantum Hall regime, a graphene pn junction, formed thanks to gates deposited on top of a stack composed of a graphene sheet encapsulated in Boron nitride crystals. In order to obtain an electrostatic control of the valley polarization of incoming electrons, we deposited local gates at the intersections between the pn junction and the graphene physical edge. Associating this electrostatic control to a tuning of the Aharanov-Bohm phase, we can coherently manipulate the valley of an electron over the whole states described by a valley Bloch sphere. In what follows, the coherence of the quantum states is investigated thanks to Mach Zehnder interferometry, by measuring the interferences dependence on the chemical potential of incoming electrons and on the temperature of the system. The quantum states formed are exceptionally steady, they persist up to 1.5K and 1mV, in other words at energies 20 times higher than what was observed in GaAs/AlGaAs.Then, the manuscript describes the study of the coherence length, i.e. the distance on which an electron can propagate while keeping its phase coherence, which has never been measured in the quantum Hall regime in graphene. To that end, the interferences dependence on the temperature was measured in three pn junctions of different lengths. By doing so, two coherence lengths, corresponding to two different regimes of decoherence, were extracted; in the regime occurring at low temperature, a record value of 374μm at 20mK was obtained.Finally, we investigated one of the mechanisms of decoherence in our system: spin waves, propagating in the graphene bulk when it is magnetized. During this project, we have shown the possibility to encode information in the valley and to manipulate coherently this degree of freedom, paving the way towards a new domain: the valleytronics. Furthermore, the coherence of the system is exceptional, enabling to envision the achievement of entangled electronic states by using a double Mach Zehnder interferometer geometry. This opens promising prospects for quantum computing, but also for fundamental purposes, with the possibility to demonstrate, for the first time with fermions, the validity of the Copenhagen interpretation of quantum physics within the EPR paradox framework

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Derishev, Anton. "Měření kapacity vysokonapěťových přechodů PN." Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2015. http://www.nusl.cz/ntk/nusl-221152.

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The work deals with the capacitance measurement of high-voltage PN junctions. The work is divided into theoretical and practical parts. The theoretical part presents insight into the fundamental properties of PN junctions and methods for measuring of the capacitance of PN junctions, primarily by C-V measurement. In the practical part, several kinds of measuring circuits are introduced and a suitable method of measurement is found. The calculations of basic parameters - the width of the base and resistivity are presented and discussed. The results were compared with the values obtained by calculation from the technological parameters of the junction.

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El-Amin, Ammaarah Haleemah. "Investigation of Semitransparent Cu2O/ZnO Based Heterostructure Diodes for Memory and Related Applications." University of Toledo / OhioLINK, 2014. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1388761525.

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Chavez, Ruben [Verfasser], and Roland [Akademischer Betreuer] Schmechel. "High Temperature Thermoelectric Device Concept Using Large Area PN Junction / Ruben Chavez. Betreuer: Roland Schmechel." Duisburg, 2015. http://d-nb.info/107979350X/34.

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Al, Imam Shahriar. "Simulation of a 2D pn junction in silicon thin film incorporating quantum transport for carriers." Thesis, Connect to online version, 2006. http://proquest.umi.com/pqdweb?did=1251871411&sid=3&Fmt=2&clientId=10306&RQT=309&VName=PQD.

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Books on the topic "Pn junction"

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The PN junction diode. 2nd ed. Reading, Mass: Addison-Wesley, 1989.

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Neudeck, Gerold W. The PN junction diode. 2nd ed. Reading, Mass: Addison-Wesley, 1988.

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Principles of solar cells, LEDs, and diodes: The role of the PN junction. Chichester, West Sussex, U.K: Wiley, 2011.

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Kitai, Adrian. Principles of Solar Cells, LEDs and Diodes: The role of the PN junction. Chichester, UK: John Wiley & Sons, Ltd, 2011. http://dx.doi.org/10.1002/9781119974543.

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P, Leon Rosa, Arrison Anne, and United States. National Aeronautics and Space Administration., eds. A V-grooved AlGaAs/GaAs passivated PN junction. [Washington, DC]: National Aeronautics and Space Administration, 1987.

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Neudeck, George W. The PN Junction Diode, Volume II (2nd Edition). Prentice Hall, 1988.

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P, Leon Rosa, Arrison Anne, and United States. National Aeronautics and Space Administration., eds. A V-grooved AlGaAs/GaAs passivated PN junction. [Washington, DC]: National Aeronautics and Space Administration, 1987.

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A V-grooved AlGaAs/GaAs passivated PN junction. [Washington, DC]: National Aeronautics and Space Administration, 1987.

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Fast risetime reverse bias pulse failures in SiC PN junction diodes. [Washington, DC]: National Aeronautics and Space Administration, 1996.

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Christian, Fazi, Parsons James D, and United States. National Aeronautics and Space Administration., eds. Fast risetime reverse bias pulse failures in SiC PN junction diodes. [Washington, DC]: National Aeronautics and Space Administration, 1996.

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Book chapters on the topic "Pn junction"

1

Williams, B. W. "The pn Junction." In Power Electronics, 8–15. London: Macmillan Education UK, 1987. http://dx.doi.org/10.1007/978-1-349-18525-2_2.

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Watson, John. "The pn Junction Diode." In Mastering Electronics, 81–94. London: Macmillan Education UK, 1986. http://dx.doi.org/10.1007/978-1-349-08533-0_7.

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Watson, John. "The pn junction diode." In Mastering Electronics, 81–93. London: Macmillan Education UK, 1990. http://dx.doi.org/10.1007/978-1-349-11911-0_7.

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Watson, John. "The pn Junction Diode." In Mastering Electronics, 75–85. London: Macmillan Education UK, 1996. http://dx.doi.org/10.1007/978-1-349-14210-1_8.

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Böer, Karl W. "The pn-Junction with Light." In Survey of Semiconductor Physics, 739–77. Dordrecht: Springer Netherlands, 1992. http://dx.doi.org/10.1007/978-94-011-2912-1_23.

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Böer, Karl W. "The pn-Junction with Light." In Handbook of the Physics of Thin-Film Solar Cells, 591–624. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-36748-9_32.

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Böer, Karl W. "The pn-Junction with Light." In Springer Series in Solid-State Sciences, 227–63. Berlin, Heidelberg: Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-642-02236-4_10.

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Low, Tony. "Graphene pn Junction: Electronic Transport and Devices." In Graphene Nanoelectronics, 467–508. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-22984-8_15.

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Arora, Narain. "Review of Basic Semiconductor and pn Junction Theory." In Computational Microelectronics, 15–68. Vienna: Springer Vienna, 1993. http://dx.doi.org/10.1007/978-3-7091-9247-4_2.

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Boulgamh, F., M. Remram, and A. Djouambi. "Small Signal Fractional Order Modeling of PN Junction Diode." In Lecture Notes in Electrical Engineering, 247–55. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-48929-2_19.

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Conference papers on the topic "Pn junction"

1

Edwards, Hal. "pn Junction Delineation in Si Devices Using Scanning Capacitance Spectroscopy." In ISTFA 2000. ASM International, 2000. http://dx.doi.org/10.31399/asm.cp.istfa2000p0529.

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Abstract The scanning capacitance microscope is a carrier-sensitive imaging tool based upon the well-known scanning-probe microscope (SCM). Scanning capacitance spectroscopy (SCS) is useful to utilize an SCM to delineate pn junctions in Si devices. This article reports the applications of SCS to Si devices such as CMOS and BiCMOS. SCS is shown to resolve device features on the 10 nm scale for several technologies. Ongoing work includes verifying the reproducibility of SCS measurements and using physical modeling to support the empirical assignment of depletion region width and electrical pn junction position from SCS data. Another technology area where two-dimensional pn junction data is useful is in CMOS device isolation.

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Phang, J. C. H., S. Kolachina, and D. S. H. Chan. "Single Contact Electron Beam Induced Current Microscopy for Failure Analysis of Integrated Circuits." In ISTFA 1997. ASM International, 1997. http://dx.doi.org/10.31399/asm.cp.istfa1997p0215.

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Abstract Single Contact Electron Beam Induced Current (SCEBIC) microscopy, a new junction imaging technique suitable for visualization of unconnected pn junctions in integrated circuits is presented. By using the substrate contact alone of a die, the SCEBIC approach eliminates the need to connect a junction to the imaging electronics as is done in the conventional Electron Beam Induced Current (EBIC) technique. The principles of SCEBIC are discussed and experimental data which validate the SCEBIC approach for imaging of pn junctions is presented. Examples of SCEBIC images are presented and applications of SCEBIC microscopy in IC failure analysis are discussed.

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Lee, Yoon Ho Daniel, Jaime Cardenas, and Michal Lipson. "Linear silicon PN junction phase modulator." In CLEO: Science and Innovations. Washington, D.C.: OSA, 2015. http://dx.doi.org/10.1364/cleo_si.2015.sw3n.5.

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Falconi, Christian, Corrado Di Natale, Giuseppe Ferri, and Arnaldo D'Amico. "SINGLE PN JUNCTION PTAT WITHOUT SWITCHES." In Proceedings of the 5th Italian Conference — Extended to Mediterranean Countries. WORLD SCIENTIFIC, 2000. http://dx.doi.org/10.1142/9789812792013_0068.

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Kayes, B. M., M. A. Filler, M. D. Henry, J. R. Maiolo III, M. D. Kelzenberg, M. C. Putnam, J. M. Spurgeon, et al. "Radial PN junction, wire array solar cells." In 2008 33rd IEEE Photovolatic Specialists Conference (PVSC). IEEE, 2008. http://dx.doi.org/10.1109/pvsc.2008.4922460.

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Gao, Chenshan, Shaogang Wang, Chunjian Tan, Xu Liu, Quan Zhou, and Huaiyu Ye. "Thermal Non-Equilibrium Analysis on PN junction." In 2020 21st International Conference on Electronic Packaging Technology (ICEPT). IEEE, 2020. http://dx.doi.org/10.1109/icept50128.2020.9202989.

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Felipe Gomes, L. B., Roberto Batista Sardenberg, and M. A. Jose Figueiredo. "Large AC testing of PN junction diodes." In 2018 3rd International Symposium on Instrumentation Systems, Circuits and Transducers (INSCIT). IEEE, 2018. http://dx.doi.org/10.1109/inscit.2018.8546710.

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Wang, J., S. Jiang, H. Zong, Y. Liao, T. Liu, J. Shen, Y. Ando, et al. "Vertical PN Junction-based GaN Power Diode." In 2019 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2019. http://dx.doi.org/10.7567/ssdm.2019.k-1-04.

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Jinlong Li, Shaohui Xu, Xinping Qu, G. Ru, Zhengyin Yu, Weili Liu, Zhitang Song, and Lianwei Wang. "A 3D pn junction structure for radiation energy conversion chip." In 2006 International Workshop on Junction Technology. IEEE, 2006. http://dx.doi.org/10.1109/iwjt.2006.220876.

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Yogamalar, N. Rajeswari, and A. Chandra Bose. "Rectifying behaviour of spin coated pn hetero-junction." In NANOFORUM 2014. AIP Publishing LLC, 2015. http://dx.doi.org/10.1063/1.4918136.

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Reports on the topic "Pn junction"

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Neudeck, Philip G., and Christian Fazi. Positive Temperature Coefficient of Breakdown Voltage in 4H-SiC PN Junction Rectifiers. Fort Belvoir, VA: Defense Technical Information Center, January 1998. http://dx.doi.org/10.21236/ada359099.

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2

Axness, Carl L., Eric Richard Keiter, and Bert Kerr. Analytic 1D pn junction diode photocurrent solutions following ionizing radiation and including time-dependent changes in the carrier lifetime. Office of Scientific and Technical Information (OSTI), April 2011. http://dx.doi.org/10.2172/1018469.

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3

David P. Norton, Stephen Pearton, and Fan Ren. ZnO PN Junctions for Highly-Efficient, Low-Cost Light Emitting Diodes. Office of Scientific and Technical Information (OSTI), September 2007. http://dx.doi.org/10.2172/923721.

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