Log in

Relevant bibliographies by topics / Pn junction / Journal articles

To see the other types of publications on this topic, follow the link: Pn junction.

Journal articles on the topic 'Pn junction'

Author: Grafiati

Published: 4 June 2021

Last updated: 25 July 2025

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the top 50 journal articles for your research on the topic 'Pn junction.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Browse journal articles on a wide variety of disciplines and organise your bibliography correctly.

1

Edwards, Hal. "Applications of SCM and SCS to Failure Analysis." EDFA Technical Articles 3, no. 2 (2001): 15–17. http://dx.doi.org/10.31399/asm.edfa.2001-2.p015.

Full text

Abstract:

Abstract Scanning capacitance spectroscopy (SCS) is a new way to use a scanning capacitance microscope (SCM) to delineate pn junctions in silicon devices. SCS produces two-dimensional pn junction maps with features as small as 10 nm. It can also estimate the pn junction depletion width and hence doping levels near the junction. This article explains how SCS and SCMs allow a whole new regime of doping-related phenomena to be explored in Si devices and ICs.

APA, Harvard, Vancouver, ISO, and other styles

2

Paračka, Petr, Pavel Koktavý, and Robert Macku. "PN Junction Defects Detection in Solar Cells Using Noise Diagnostics." Key Engineering Materials 465 (January 2011): 322–25. http://dx.doi.org/10.4028/www.scientific.net/kem.465.322.

Full text

Abstract:

PN junction is one of the most important parts of solar cells. Its quality affects lifetime and efficiency of solar cells. Local defects which appear in PN junctions during the manufacture process are very important from this point of view. These are caused by localized areas with high donor or acceptor doping agents, impurities, dislocations or other mechanisms which effect in lower breakdown voltage of PN junction in reverse bias. Several base methods can be used for solar cells nondestructive diagnostics. Measuring methods of low-band noise current effective value with reverse bias junction

APA, Harvard, Vancouver, ISO, and other styles

3

Chavez, R., A. Becker, V. Kessler, et al. "A new thermoelectric concept using large area PN junctions." MRS Proceedings 1543 (2013): 3–8. http://dx.doi.org/10.1557/opl.2013.954.

Full text

Abstract:

ABSTRACTA new thermoelectric concept using large area silicon PN junctions is experimentally demonstrated. In contrast to conventional thermoelectric generators where the n-type and p-type semiconductors are connected electrically in series and thermally in parallel, we demonstrate a large area PN junction made from densified silicon nanoparticles that combines thermally induced charge generation and separation in a space charge region with the conventional Seebeck effect by applying a temperature gradient parallel to the PN junction. In the proposed concept, the electrical contacts are made a

APA, Harvard, Vancouver, ISO, and other styles

4

Wen, Sihai, and D. D. L. Chung. "Rectifying and thermocouple junctions based on Portland cement." Journal of Materials Research 16, no. 7 (2001): 1989–93. http://dx.doi.org/10.1557/jmr.2001.0272.

Full text

Abstract:

Rectifying and thermocouple junctions have been achieved using electrically dissimilar Portland cement pastes. The preferred junction is a pn-junction involving steel fiber cement paste (n-type) and carbon fiber cement paste (p-type). For this junction, the thermocouple sensitivity is 70 εV/°C.

APA, Harvard, Vancouver, ISO, and other styles

5

Sarmasov, S. N., R. Sh Rahimov, and T. Sh Abdullayev. "THE EFFECT OF OXYGEN ADSORPTION ON THE CONDUCTIVITY OF PBTE FILMS." EurasianUnionScientists 6, no. 8(77) (2020): 21–23. http://dx.doi.org/10.31618/esu.2413-9335.2020.6.77.1001.

Full text

Abstract:

The effect of oxygen adsorption on the conductivity of PbTe films is studied. Pn junctions based on PbTe films are photosensitive in the IR spectral region with a maximum photosensitivity of 𝜆𝑚𝑎𝑥 microns. The tunneling mechanism of current flow through the pn junction is shown.

APA, Harvard, Vancouver, ISO, and other styles

6

Awaya, Keisuke, Akihide Takashiba, Takaaki Taniguchi, Michio Koinuma, Tatsumi Ishihara, and Shintaro Ida. "Photoelectrochemical properties of a well-structured 1.3 nm-thick pn junction crystal." Chemical Communications 55, no. 31 (2019): 4586–88. http://dx.doi.org/10.1039/c9cc01039d.

Full text

Abstract:

A 1.3 nm-thick nickel hydroxide (p-type, 0.5 nm)/titania (n-type, 0.8 nm) pn junction prepared by lamination of nanosheets improved the onset potential for photoelectrochemical oxidation and increased the photooxidation current, indicating that ultrathin pn junctions suppress the recombination of photo-generated carriers.

APA, Harvard, Vancouver, ISO, and other styles

7

Cheng, Calvin H. W., and Mark C. Lonergan. "A Conjugated Polymer pn Junction." Journal of the American Chemical Society 126, no. 34 (2004): 10536–37. http://dx.doi.org/10.1021/ja046880p.

Full text

APA, Harvard, Vancouver, ISO, and other styles

8

Cunha, Victor De Rezende, Daniel Neves Micha, Rudy Massami Sakamoto Kawabata, Luciana Dornelas Pinto, Mauricio Pamplona Pires, and Patricia Lustoza De Souza. "Optimization of the InGaP Top Junction of Triple Junction Solar Cell for Spatial Application." Journal of Integrated Circuits and Systems 14, no. 1 (2019): 1–5. http://dx.doi.org/10.29292/jics.v14i1.62.

Full text

Abstract:

Electrical current mismatching is a well-known limitation of triple junction solar cells that lowers the final conversion efficiency. Several solutions have been proposed to face this issue, including the insertion of a multiple quantum well structure as the intermediate junction’s active material. With a better matching in the current among the junctions, the total current increases, thus modifying the working conditions of the overall device. In this way, the InGaP top junction needs to be optimized to such new condition. In this work, numerical simulations were carried out aiming the enlarg

APA, Harvard, Vancouver, ISO, and other styles

9

Wen, Sihai, and D. D. L. Chung. "Electrical behavior of cement-based junctions including the pn-junction." Cement and Concrete Research 31, no. 1 (2001): 129–33. http://dx.doi.org/10.1016/s0008-8846(00)00361-6.

Full text

APA, Harvard, Vancouver, ISO, and other styles

10

Liang, Chao, Chunli Zhang, Weiqiu Chen, and Jiashi Yang. "Effects of Magnetic Fields on PN Junctions in Piezomagnetic–Piezoelectric Semiconductor Composite Fibers." International Journal of Applied Mechanics 12, no. 08 (2020): 2050085. http://dx.doi.org/10.1142/s1758825120500854.

Full text

Abstract:

We study the electromechanical and electrical behaviors of a PN junction in a multiferroic composite fiber, consisting of a piezoelectric semiconductor (PS) layer between two piezomagnetic (PM) layers, under a transverse magnetic field. Based on the derived one-dimensional model for multiferroic composite semiconductor structures, we obtain the linear analytical solution for the built-in potential and electric field in the junction when there is no applied voltage between the two ends of the fiber. When a bias voltage is applied over the two ends of the fiber, a nonlinear numerical analysis is

APA, Harvard, Vancouver, ISO, and other styles

11

Bunker, Kristin Lee, Terry J. Stark, Dale Batchelor, Juan Carlos Gonzalez, and Phillip E. Russell. "pn Junction Location Using an EBIC Technique in a Scanning Transmission Electron Microscope." EDFA Technical Articles 4, no. 4 (2002): 29–33. http://dx.doi.org/10.31399/asm.edfa.2002-4.p029.

Full text

Abstract:

Abstract STEM-EBIC imaging, a nano-characterization technique, has been used in the study of electrically active defects, minority carrier diffusion length, surface recombination velocity, and inhomogeneities in Si pn junctions. In this article, the authors explain how they developed and built a STEM-EBIC system, which they then used to determine the junction location of an InGaN quantum well LED. They also developed a novel FIB-based sample preparation method and a custom sample holder, facilitating the simultaneous collection of Z-contrast, EBIC, and energy dispersive spectroscopy images. Th

APA, Harvard, Vancouver, ISO, and other styles

12

Kim, Jin Joo, Young Rang Uhm, Byoung Gun Choi, and Kwang Jae Son. "Study of the Electroless Deposition of Ni for Betavoltaic Battery Using PN Junction without Seed Layer." Journal of Nanomaterials 2015 (2015): 1–5. http://dx.doi.org/10.1155/2015/283291.

Full text

Abstract:

The method and conditions of Ni plating were optimized to maximize the output of a betavoltaic battery using radioactive63Ni. The difference of the short circuit currents between the pre- and postdeposition of63Ni on the PN junction was 90 nA at theI-Vcharacteristics. It is suspected that the beta rays emitted from63Ni did not deeply penetrate into the PN junction due to a Ni seed layer with a thickness of 500 Å. To increase the penetration of the beta rays, electroless Ni plating was carried out on the PN junction without a seed layer. To establish the electroless coating conditions for63Ni,

APA, Harvard, Vancouver, ISO, and other styles

13

Priyanka, Suman Verma, and A.K.Sharma Dr. "EXPERIMENTAL STUDY AND PERFORMANCE OF PV SYSTEM AND PEDAL POWER WITH GRID." International Journal of Research – Granthaalayah 4, no. 4 (2017): 159–64. https://doi.org/10.5281/zenodo.846686.

Full text

Abstract:

A solar cell is essential a PN junction with a large surface area. The N-type material is kept thin to allow light to pass through to the PN junction. Light travels in packets of energy called photons. The generation of electric current happens inside the depletion zone of the PN junction. The depletion region as explained previously with the diode is the area around the PN junction where the electrons from the N-type silicon, have diffused into the holes of the Ptype material. 3.2.3- Pedal powerSome applications include pedal powered laptops, pedal powered grinders and pedal powered water wel

APA, Harvard, Vancouver, ISO, and other styles

14

Wei, Zibo, Peijun Wei, Chunyu Xu, and Xiao Guo. "Influences of piezoelectric positive-negative junction on the multi-field coupled waves propagation in the piezoelectric semiconductor." Journal of the Acoustical Society of America 152, no. 3 (2022): 1883–900. http://dx.doi.org/10.1121/10.0014179.

Full text

Abstract:

The influences of the piezoelectric positive-negative junction (PN junction) between two semiconductors with different doping types on the multi-field coupled wave propagation are studied in the present work. The layered structures of semiconductors are often used in intelligent devices, and the PN junction plays an important role for performance improvement. Due to the migration and diffusion of carriers, the electric potential and concentration of the carrier are graded distribution in the PN junction. This inhomogeneity results in the reflection and transmission of coupled waves, which are

APA, Harvard, Vancouver, ISO, and other styles

15

Fang, Kai, Nian Li, Peng Li, Zhenghua Qian, V. Kolesov, and I. Kuznetsova. "Effects of an attached functionally graded layer on the electromechanical behaviors of piezoelectric semiconductor fibers." Applied Mathematics and Mechanics 43, no. 9 (2022): 1367–80. http://dx.doi.org/10.1007/s10483-022-2900-5.

Full text

Abstract:

AbstractIn this paper, we propose a specific two-layer model consisting of a functionally graded (FG) layer and a piezoelectric semiconductor (PS) layer. Based on the macroscopic theory of PS materials, the effects brought about by the attached FG layer on the piezotronic behaviors of homogeneous n-type PS fibers and PN junctions are investigated. The semi-analytical solutions of the electromechanical fields are obtained by expanding the displacement and carrier concentration variation into power series. Results show that the antisymmetry of the potential and electron concentration distributio

APA, Harvard, Vancouver, ISO, and other styles

16

Hickman, R., J. M. Van Hove, P. P. Chow, et al. "GaN PN junction issues and developments." Solid-State Electronics 44, no. 2 (2000): 377–81. http://dx.doi.org/10.1016/s0038-1101(99)00245-2.

Full text

APA, Harvard, Vancouver, ISO, and other styles

17

Riordan, M., and L. Hoddeson. "The origins of the pn junction." IEEE Spectrum 34, no. 6 (1997): 46–51. http://dx.doi.org/10.1109/6.591664.

Full text

APA, Harvard, Vancouver, ISO, and other styles

18

Anttu, Nicklas, Elisabetta Maria Fiordaliso, José Cano Garcia, Giuliano Vescovi, and David Lindgren. "Analysis of Nanowire pn-Junction with Combined Current–Voltage, Electron-Beam-Induced Current, Cathodoluminescence, and Electron Holography Characterization." Micromachines 15, no. 1 (2024): 157. http://dx.doi.org/10.3390/mi15010157.

Full text

Abstract:

We present the characterization of a pn-junction GaAs nanowire. For the characterization, current–voltage, electron-beam-induced current, cathodoluminescence, and electron holography measurements are used. We show that by combining information from these four methods, in combination with drift-diffusion modelling, we obtain a detailed picture of how the nanowire pn-junction is configured and how the recombination lifetime varies axially in the nanowire. We find (i) a constant doping concentration and 600 ps recombination lifetime in the n segment at the top part of the nanowire; (ii) a 200–300

APA, Harvard, Vancouver, ISO, and other styles

19

Verma, Priyanka Suman, and A. K. Sharma. "EXPERIMENTAL STUDY AND PERFORMANCE OF PV SYSTEM AND PEDAL POWER WITH GRID." International Journal of Research -GRANTHAALAYAH 4, no. 4 (2016): 159–64. http://dx.doi.org/10.29121/granthaalayah.v4.i4.2016.2768.

Full text

Abstract:

A solar cell is essential a PN junction with a large surface area. The N-type material is kept thin to allow light to pass through to the PN junction.Light travels in packets of energy called photons. The generation of electric current happens inside the depletion zone of the PN junction. The depletion region as explained previously with the diode is the area around the PN junction where the electrons from the N-type silicon, have diffused into the holes of the P-type material. 3.2.3- Pedal power- Some applications include pedal powered laptops, pedal powered grinders and pedal powered w

APA, Harvard, Vancouver, ISO, and other styles

20

Kury, P., N. Schaeren-Wiemers, and D. Monard. "Protease nexin-1 is expressed at the mouse met-/mesencephalic junction and FGF signaling regulates its promoter activity in primary met-/mesencephalic cells." Development 124, no. 6 (1997): 1251–62. http://dx.doi.org/10.1242/dev.124.6.1251.

Full text

Abstract:

The expression pattern of the serine protease inhibitor gene Protease nexin-1 (PN-1) has been analyzed by in situ hybridization during embryonic nervous system development. PN-1 was found to be specifically expressed at the junction between the mes- and metencephalon (mid- and hindbrain). Transgenic embryos expressing the bacterial lacZ gene under the control of different fragments of the PN-1 upstream regulatory region were used to demarcate an enhancer sufficient for expression at this putative segmental border. Primary cell cultures derived from the embryonic neural tube at the level of the

APA, Harvard, Vancouver, ISO, and other styles

21

Hoshino, Koki, Hisatoshi Yamamoto, Ryota Tamai, Takumi Nakajima, Shugo Miyake, and Masayuki Takashiri. "N-Type Nanocomposite Films Combining SWCNTs, Bi2Te3 Nanoplates, and Cationic Surfactant for Pn-Junction Thermoelectric Generators with Self-Generated Temperature Gradient Under Uniform Sunlight Irradiation." Sensors 24, no. 21 (2024): 7060. http://dx.doi.org/10.3390/s24217060.

Full text

Abstract:

Flexible thermoelectric generators (TEGs) with pn-junction single-walled carbon nanotube (SWCNT) films on a polyimide substrate have attracted considerable attention for energy harvesting. This is because they generate electricity through the photo-thermoelectric effect by self-generated temperature gradient under uniform sunlight irradiation. To increase the performance and durability of the pn-junction TEGs, n-type films need to be improved as a priority. In this study, bismuth telluride (Bi2Te3) nanoplates synthesized by the solvothermal method were added to the n-type SWCNT films, includin

APA, Harvard, Vancouver, ISO, and other styles

22

Ivanov, Pavel A., and Igor V. Grekhov. "Breakdown Behavior of 900-V 4H-SiC Schottky Barrier Diodes Terminated with Boron-Implanted pn-Junction." Materials Science Forum 600-603 (September 2008): 955–58. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.955.

Full text

Abstract:

High-voltage (900 V) 4H-SiC Schottky-barrier diodes (SBD) terminated with guard pnjunction were fabricated and investigated. The guard pn-junction was formed by room temperature boron implantation followed by high temperature annealing. Owing to the transient enhanced boron diffusion during anneal, the depth of guard pn-junction is about 1.7 μm, that is approximately 1 μm deeper than the expected average range of 11B ions in 4H-SiC. The maximum reverse voltage of 4H-SiC SBD produced has been found to be limited by the avalanche breakdown in cylindrical portion of planar pn-junction. The value

APA, Harvard, Vancouver, ISO, and other styles

23

Sato, Shinji, Fumiki Kato, Hiroshi Hozoji, Hiroshi Sato, Hiroshi Yamaguchi, and Shinsuke Harada. "High-Temperature Operating Characteristics of Inverter Using SBD-Integrated MOSFET." Materials Science Forum 1004 (July 2020): 1115–22. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.1115.

Full text

Abstract:

In the conventional SiC-MOSFET, a PN junction diode is included between the source and drain. This P-N junction diode not only causes device degradation, but also generates a large reverse recovery surge voltage during high temperature operation. This surge voltage increases the electrical stress of the power converter, causing dielectric breakdown and control malfunction. We have developed a SBD integrated SiC-MOSFET. This MOSFET reduces the occurrence of reverse recovery surge voltage during high-temperature operation caused by inactivating the included PN junction diode. In this paper, we d

APA, Harvard, Vancouver, ISO, and other styles

24

Guo, Fei, Zhifeng Shi, Bo Yang, and Shifeng Zhao. "The role of PN-like junction effects in energy storage performances for Ag2O nanoparticle dispersed lead-free K0.5Na0.5NbO3-BiMnO3 films." Nanoscale 12, no. 14 (2020): 7544–49. http://dx.doi.org/10.1039/d0nr00726a.

Full text

Abstract:

This work designs a PN-like junction structure by introducing Ag<sub>2</sub>O nanoparticles into lead-free 0.92K<sub>0.5</sub>Na<sub>0.5</sub>NbO<sub>3</sub>-0.08BiMnO<sub>3</sub> solid solution films to investigate the role of PN-like junction effects in energy storage performances.

APA, Harvard, Vancouver, ISO, and other styles

25

Chen, Fan, Long Chen, Pengfei Lian, Dapeng Liu, Shuai Tao, and Zebin Kong. "Effect of Shell Temperature on Thermal Resistance and Junction Temperature for Power Diode." Journal of Physics: Conference Series 2101, no. 1 (2021): 012029. http://dx.doi.org/10.1088/1742-6596/2101/1/012029.

Full text

Abstract:

Abstract Accurate measurement of junction temperature can avoid thermal failure of diode. During aging test, junction temperature should be indirectly calculated by testing its thermal resistance. In this paper, junction-to-case thermal resistance (Rthjc) of XX diode is tested by T3ster based on transient dual interface method. Its Rthjc is about 1.23K/W at 25°C and contains PN junction thermal resistance, metal shell thermal resistance and Sn-based solder thermal resistance, respectively. These three types of thermal resistance decrease in order. Effect of shell temperature on junction temper

APA, Harvard, Vancouver, ISO, and other styles

26

GAO Dan, 高丹, 梁静秋 LIANG Jing-qiu, 梁中翥 LIANG Zhong-zhu, 田超 TIAN Chao, 秦余欣 QIN Yu-xin, and 王维彪 WANG Wei-biao. "pn Junction Characteristic of AlGaInP DH-LED." Chinese Journal of Luminescence 34, no. 9 (2013): 1213–18. http://dx.doi.org/10.3788/fgxb20133409.1213.

Full text

APA, Harvard, Vancouver, ISO, and other styles

27

MOHD YUSOFF, M. Z., Z. HASSAN, C. W. CHIN, et al. "FABRICATION OF GaN HOMO-JUNCTION ON Si (111) SUBSTRATE FOR SENSOR APPLICATIONS." Journal of Molecular and Engineering Materials 01, no. 01 (2013): 1250006. http://dx.doi.org/10.1142/s2251237312500062.

Full text

Abstract:

In this paper, we investigated growth of GaN pn-homo junction layers on silicon (111) by plasma-assisted molecular beam epitaxy (PA-MBE) system and its application for photo-sensors. Silicon (Si) and magnesium (Mg) were used in this study as n- and p-dopants, respectively. Structural and optical analysis of the GaN homo-junction samples were performed by using reflection high energy electron diffraction (RHEED), X-ray diffraction (XRD), Raman spectroscopy and photoluminescence (PL) to analyze the crystalline quality of the samples. Surprisingly, the Raman analysis has revealed that there is no

APA, Harvard, Vancouver, ISO, and other styles

28

Koparde, Snehal. "GaN-based Semiconductor devices with Multichannel Structures." International Journal of New Practices in Management and Engineering 11, no. 1S (2022): 09–10. http://dx.doi.org/10.17762/ijnpme.v11i1s.118.

Full text

Abstract:

Semiconductor junctions, for example, pn-intersection and Schottky intersection have been very significant as essential components for different semiconductor gadgets. The break-down voltage of the junction PN-intersection relies upon the polluting influence fixations in semiconductors. An opposite voltage is supported in the exhaustion layer thickness which is corresponding to the square of base voltage. The breakdown happens, when the electric field with an intersection arrives at the semiconductor regardless of whether the consumption layer can be extended substantially. To accomplish highe

APA, Harvard, Vancouver, ISO, and other styles

29

Sameshima, Toshiyuki, Takayuki Motoki, Keisuke Yasuda, Tomohiko Nakamura, Masahiko Hasumi, and Toshihisa Mizuno. "Photoinduced carrier annihilation in silicon pn junction." Japanese Journal of Applied Physics 54, no. 8 (2015): 081302. http://dx.doi.org/10.7567/jjap.54.081302.

Full text

APA, Harvard, Vancouver, ISO, and other styles

30

Chen, Chin Sheng, Chiufeng Lin, M. C. He, De Ren Yang, and Duan Lin Que. "PN Junction Formation by Two Steps Annealing." Solid State Phenomena 32-33 (December 1993): 89–92. http://dx.doi.org/10.4028/www.scientific.net/ssp.32-33.89.

Full text

APA, Harvard, Vancouver, ISO, and other styles

31

Shimaoka, Takehiro, Satoshi Koizumi, and Manobu M. Tanaka. "Diamond photovoltaic radiation sensor using pn junction." Applied Physics Letters 113, no. 9 (2018): 093504. http://dx.doi.org/10.1063/1.5034413.

Full text

APA, Harvard, Vancouver, ISO, and other styles

32

Mazhari, B., and H. Morkoç. "Surface recombination in GaAs PN junction diode." Journal of Applied Physics 73, no. 11 (1993): 7509–14. http://dx.doi.org/10.1063/1.353998.

Full text

APA, Harvard, Vancouver, ISO, and other styles

33

Cui, Yuanzhi, Hongyue Hao, Shihao Zhang, et al. "High-performance GaSb planar PN junction detector." Journal of Semiconductors 45, no. 9 (2024): 092403. http://dx.doi.org/10.1088/1674-4926/24040024.

Full text

Abstract:

Abstract This paper examines GaSb short-wavelength infrared detectors employing planar PN junctions. The fabrication was based on the Zn diffusion process and the diffusion temperature was optimized. Characterization revealed a 50% cut-off wavelength of 1.73 μm, a maximum detectivity of 8.73 × 1010 cm·Hz1/2/W, and a minimum dark current density of 1.02 × 10−5 A/cm2. Additionally, a maximum quantum efficiency of 60.3% was achieved. Subsequent optimization of fabrication enabled the realization of a 320 × 256 focal plane array that exhibited satisfactory imaging results. Remarkably, the GaSb pla

APA, Harvard, Vancouver, ISO, and other styles

34

Chia, A. C. E., and R. R. LaPierre. "Electrostatic model of radial pn junction nanowires." Journal of Applied Physics 114, no. 7 (2013): 074317. http://dx.doi.org/10.1063/1.4818958.

Full text

APA, Harvard, Vancouver, ISO, and other styles

35

KAZIMIERCZUK, MARIAN K. "REVERSE RECOVERY OF POWER pn JUNCTION DIODES." Journal of Circuits, Systems and Computers 05, no. 04 (1995): 589–606. http://dx.doi.org/10.1142/s0218126695000369.

Full text

Abstract:

A quasi-steady state approximation is used to derive expressions for the waveforms of minority carrier charge stored in p+nn+ power junction diodes driven by large-signal sinusoidal and ramp voltages. These waveforms are derived by solving a diode charge-control differential equation. Using the charge waveforms, the storage time is determined and the diode current and voltage waveforms are predicted. It is shown that three frequency ranges can be distinguished: (1) low-frequency range in which the reverse recovery is negligible, (2) mid-frequency range in which the reverse recovery is detrimen

APA, Harvard, Vancouver, ISO, and other styles

36

Khoshaman, A. H., J. Rasnley, and Behraad Bahreyni. "Simulation and modelling of pn junction actuators." Simulation Modelling Practice and Theory 21, no. 1 (2012): 146–54. http://dx.doi.org/10.1016/j.simpat.2011.10.008.

Full text

APA, Harvard, Vancouver, ISO, and other styles

37

Das, B., and S. P. McGinnis. "Porous silicon pn junction light emitting diodes." Semiconductor Science and Technology 14, no. 11 (1999): 988–93. http://dx.doi.org/10.1088/0268-1242/14/11/308.

Full text

APA, Harvard, Vancouver, ISO, and other styles

38

Koizumi, S. "Ultraviolet Emission from a Diamond pn Junction." Science 292, no. 5523 (2001): 1899–901. http://dx.doi.org/10.1126/science.1060258.

Full text

APA, Harvard, Vancouver, ISO, and other styles

39

Tanimoto, Satoshi, Kenichi Ueoka, Takaya Fujita, et al. "A New Type of Single Carrier Conduction Rectifier on SiC." Materials Science Forum 858 (May 2016): 769–72. http://dx.doi.org/10.4028/www.scientific.net/msf.858.769.

Full text

Abstract:

A new rectifier, called SPND or SNPD (Schottky-PN or -NP junction diode) and inherently showing low on-resistance and unipolar operation, was experimentally demonstrated for the first time on 4H-SiC. It is structured with an n– or a p– region of very low doping that is sandwiched and completely depleted between a Schottky junction and a one-sided PN junction. Either electrons or holes, but not both, contribute to the current conduction process. Clear and sharp rectifying properties are observed over the entire range of applied voltage.

APA, Harvard, Vancouver, ISO, and other styles

40

Ma, Shi Hui, Cai Zhe Hao, and Xian Jiang. "Influences of Phosphorous Gettering on Minority Carrier Lifetime Distribution of Polycrystalline Silicon Wafer." Advanced Materials Research 569 (September 2012): 229–32. http://dx.doi.org/10.4028/www.scientific.net/amr.569.229.

Full text

Abstract:

The influences of the phosphorus gettering in PN junction formation on the distribution of minority carrier lifetime of polycrystalline silicon wafer in solar cell production process were studied. The experimental results shows that the distribution of internal defects and impurities in polycrystalline silicon wafer significantly impact on the effectiveness of the phosphorus gettering during preparation of PN junction through the phosphorus diffusion technology. Especially when the impurities were transition metal elements, it caused a large difference of the phosphorus gettering effectiveness

APA, Harvard, Vancouver, ISO, and other styles

41

Song, Yue, Xin Yan, Xia Zhang, et al. "Growth and Characterization of Radial pn Junction Gaas Nanowire by MOCVD." Advanced Materials Research 457-458 (January 2012): 165–69. http://dx.doi.org/10.4028/www.scientific.net/amr.457-458.165.

Full text

Abstract:

Radial pn-junction GaAs nanowires were fabricated and investigated in detail. These nanowires were grown on GaAs (111)B substrate by metal-organic chemical vapor deposition via Au-catalyzed vapor-liquid-solid mechanism. Two types of nanowire p-n junctions were fabricated by growing a n(p)-doped GaAs shell outside a p(n) GaAs core. P-type doping was provided by diethyl zinc, while silane was introduced for n-type doping. The morphology, crystal structure and doping characteristics were investigated by FESEM, TEM and EDS. The results showed that both the two structures were of good morphology an

APA, Harvard, Vancouver, ISO, and other styles

42

Rouger, N. "Electric field distribution and voltage breakdown modeling for any PN junction." COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering 35, no. 1 (2016): 137–56. http://dx.doi.org/10.1108/compel-12-2014-0330.

Full text

Abstract:

Purpose – Scientists and engineers have been solving Poisson’s equation in PN junctions following two approaches: analytical solving or numerical methods. Although several efforts have been accomplished to offer accurate and fast analyses of the electric field distribution as a function of voltage bias and doping profiles, so far none achieved an analytic or semi-analytic solution to describe neither a double diffused PN junction nor a general case for any doping profile. The paper aims to discuss these issues. Design/methodology/approach – In this work, a double Gaussian doping distribution i

APA, Harvard, Vancouver, ISO, and other styles

43

Carvalho, André Luiz Costa, and Davies William de Lima Monteiro. "Study of the photo-adjustability of pn-junctions in photovoltaic mode coupled to photoconductors." Journal of Integrated Circuits and Systems 14, no. 3 (2019): 1–7. http://dx.doi.org/10.29292/jics.v14i3.86.

Full text

Abstract:

We propose a photo-adjustable arrangement that electrically combines a pn-junction operating in photovoltaic mode to a suitably designed photoconductor in order to keep the output current, voltage, or both, fixed. The characteristic I-V curves of a pn-junction under different light intensities do not intersect each other, resulting in different operational points for a given load. However, the resistivity of the photoconductor also changes with light, and by connecting it in parallel to the photovoltaic cell, and exposing both to the same level of irradiance, it is possible to find a design th

APA, Harvard, Vancouver, ISO, and other styles

44

Kim, Ji Eun, Won Tae Kang, Van Tu Vu, et al. "Ideal PN photodiode using doping controlled WSe2–MoSe2 lateral heterostructure." Journal of Materials Chemistry C 9, no. 10 (2021): 3504–12. http://dx.doi.org/10.1039/d0tc05625a.

Full text

Abstract:

As the tight contact interface of the lateral PN junction enables high responsivity, specific detectivity, and fast response speed, atomic-scale two-dimensional (2D) lateral PN heterostructures are emerging as viable alternatives to silicon-based photodiodes.

APA, Harvard, Vancouver, ISO, and other styles

45

Egami, Akihiro, Masami Shibagaki, Akira Kumagai, et al. "Fabrication of pn-Junction Diode for N⁺ Implanted 4H-SiC(0001) Annealed by EBAS." Materials Science Forum 556-557 (September 2007): 929–32. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.929.

Full text

Abstract:

We fabricate pn-junction diode on p-type 4H-SiC(0001), in which n-type region is formed by N ion implantation at room temperature (total dose: 2.4 x 1015 /cm2, thickness: 300 nm) and subsequently annealed for 5 min using electron bombardment annealing system (EBAS). The root-mean-square (RMS) surface roughness and sheet resistance (Rs) for N ion implanted region, annealed at 1900 oC is estimated to be 0.7 nm and 940 4/sq., respectively. The alloyed Ni ohmic contact to N ion implanted layer, annealed at 1900 oC, shows the contact resistance (Rc) of 8.3 x 10-5 4cm2. The forward drop voltage at 1

APA, Harvard, Vancouver, ISO, and other styles

46

Avram, Miruna, and G. Preduşcă. "Analysis of Silicon PN Homojunctions Using Octave." Scientific Bulletin of Electrical Engineering Faculty 22, no. 2 (2022): 32–37. http://dx.doi.org/10.2478/sbeef-2022-0017.

Full text

Abstract:

Abstract The assembly formed by a pn semiconductor homojunction together with the metal contacts necessary to connect the junction to the external circuit is a diode. The article aims to analysed and determine the internal parameters of a pn homojunction using the Octave software.

APA, Harvard, Vancouver, ISO, and other styles

47

Liu, Fude, Wentao Wang, Lei Wang, and Guandong Yang. "Ferroelectric-semiconductor photovoltaics: Non-PN junction solar cells." Applied Physics Letters 104, no. 10 (2014): 103907. http://dx.doi.org/10.1063/1.4868304.

Full text

APA, Harvard, Vancouver, ISO, and other styles

48

Wang, Huijuan, Lixi Wan, Daquan Yu, et al. "Three-dimensional PN junction capacitor for passive integration." Applied Physics Letters 99, no. 5 (2011): 052104. http://dx.doi.org/10.1063/1.3610489.

Full text

APA, Harvard, Vancouver, ISO, and other styles

49

Milovanović, S. P., M. Ramezani Masir, and F. M. Peeters. "Bilayer graphene Hall bar with a pn-junction." Journal of Applied Physics 114, no. 11 (2013): 113706. http://dx.doi.org/10.1063/1.4821264.

Full text

APA, Harvard, Vancouver, ISO, and other styles

50

Tian, HongYu, and Jun Wang. "Spatial valley separation in strained graphene pn junction." Journal of Physics: Condensed Matter 29, no. 38 (2017): 385401. http://dx.doi.org/10.1088/1361-648x/aa8251.

Full text

APA, Harvard, Vancouver, ISO, and other styles

We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!