Relevant bibliographies by topics / Polishing Pad

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers

Academic literature on the topic 'Polishing Pad'

Author: Grafiati
Published: 4 June 2021
Last updated: 15 February 2022

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the lists of relevant articles, books, theses, conference reports, and other scholarly sources on the topic 'Polishing Pad.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Journal articles on the topic "Polishing Pad"

1

Hirose, Kenji, and Toshiyuki Enomoto. "Optimization of Double-Sided Polishing Conditions to Achieve High Flatness: Consideration of Relative Motion Direction." International Journal of Automation Technology 3, no. 5 (2009): 581–91. http://dx.doi.org/10.20965/ijat.2009.p0581.

Full text
Abstract:
Silicon (Si) wafers are the most commonly used substrates of semiconductor devices. The device design rule is miniaturization, and the device chip size is being increased to improve device integration, requiring that Si wafers be manufactured with higher flatness and larger diameters. The polishing used as a finishing process of Si wafers, however, has a serious problem; it is very difficult to set the appropriate conditions for polishing the Si wafer while wearing the polishing pad stably to high flatness. In our previous work, a method of optimizing polishing conditions based on kinematical
APA, Harvard, Vancouver, ISO, and other styles
2

Tso, Pei Lum, and Yang Liang Pai. "Amorphous Diamond Dresser for CMP Fixed Abrasives Pad." Key Engineering Materials 329 (January 2007): 157–62. http://dx.doi.org/10.4028/www.scientific.net/kem.329.157.

Full text
Abstract:
The primary consumables in chemical mechanical polishing (CMP) are the polishing pad and slurry. The polishing pad significantly influences the stability of the polishing process and the cost of consumables (CoC). Usually a diamond pad conditioner is used to scrap off the polishing debris from the pad top. Recently, an alternative planarization process can be achieved by polishing with a "fixed abrasive pad" (FAP). In order to dress bumps on FAP, this paper use an amorphous diamond, a diamond-like carbon deposited by cathode arc system as the dresser for FAP. The amorphous diamond can produce
APA, Harvard, Vancouver, ISO, and other styles
3

Li, Mao, Yong Wei Zhu, Jun Li, Jian Feng Ye, and Ji Long Fan. "Wear of Polishing Pad and Pattern Optimization of Fixed Abrasive Pad." Advanced Materials Research 126-128 (August 2010): 82–87. http://dx.doi.org/10.4028/www.scientific.net/amr.126-128.82.

Full text
Abstract:
The polishing pad plays a significant role in the Chemical Mechanical Polishing (CMP) process and its wear influences the surface accuracy of the polished wafer. A new polishing pad wear model is introduced and the law of pad wear along the pad radius is discussed, thus a new FAP with optimized pattern is designed and prepared in order. The flatness of the wafer lapped with a uniform pattern pad and that with an optimized pattern was compared. Results show that the PV value of the latter is lower that of the former.
APA, Harvard, Vancouver, ISO, and other styles
4

Li, Mao, Yong Wei Zhu, Jun Li, and Kui Lin. "Modeling of Polishing Pad Wear in Chemical Mechanical Polishing." Key Engineering Materials 431-432 (March 2010): 318–21. http://dx.doi.org/10.4028/www.scientific.net/kem.431-432.318.

Full text
Abstract:
The polishing pad’s wear influences the surface accuracy of the polished wafer. A new polishing pad wear model is established using the idea of Finite Element Analysis (FEA) and the effect of polishing parameters on the wear of polishing pad is discussed.
APA, Harvard, Vancouver, ISO, and other styles
5

Tsai, Hung Jung, and Chia Hao Chuang. "Thermal Effects of Mechanical Polishing and Conditioning on Polishing Pads." Key Engineering Materials 642 (April 2015): 120–24. http://dx.doi.org/10.4028/www.scientific.net/kem.642.120.

Full text
Abstract:
Polishing process is a primary technique for planarization of material surface in manufacture fabrication. The pad structure and its material properties are important to determine the polish rate and planarity that can be achieved by the polishing process. Besides, the pad conditioning is used to regenerate the surface of the polishing pad surface by breaking up the glazed areas. Because the polishing and pad conditioning mechanism is inadequately understood and because higher levels of pad polishing performance are desired, the investigation of experiment becomes more important.In this paper,
APA, Harvard, Vancouver, ISO, and other styles
6

Sato, Ryunosuke, and Yoshio Ichida. "Study on Polishing Characteristics of Pyramidal Structured Polishing Pad." International Journal of Automation Technology 13, no. 2 (2019): 237–45. http://dx.doi.org/10.20965/ijat.2019.p0237.

Full text
Abstract:
We conducted a polishing test to clarify the change in polishing characteristics resulting from the wear of a pyramidal-structured polishing tool, and discuss the polishing mechanism unique to the pyramidal-structured polishing pad. When the pyramidal-structured polishing pad is used for polishing, there exists an initial polishing stage in which the removal rate is high but the finished surface is rough; followed by a steady-state polishing stage in which the wear rate is low, removal rate is stable, and a high-quality finish is obtained. The true polishing pressure is constant in the steady-
APA, Harvard, Vancouver, ISO, and other styles
7

Tsai, Sung Lin, Fuang Yuan Huang, Biing Hwa Yan, and Yao Ching Tsai. "A New Polishing Pad of EVA-Adhesive-Dressed-with-SiC-Grits Polishing Face and its Applications in Silicon Wafer Polishing." Advanced Materials Research 126-128 (August 2010): 539–44. http://dx.doi.org/10.4028/www.scientific.net/amr.126-128.539.

Full text
Abstract:
This paper presents a new polishing pad with polishing silicon surface composed of a layer of Ethylene-vinyl acetate (EVA) adhesive pad coated with SiC grits. A set of polishing parameters: coating SiC grit size, concentration of SiC grit in slurry, polishing load, polishing wheel turning speed, and absorption time of polishing pad were identified with the Taguchi Methods for optimum polishing effect in terms of roughness of polished silicon surface. A surface roughness of 0.026 μm Ra can be obtained with the following values: grit size at 1.2 μm (both coated on pad and mixed in slurry), conce
APA, Harvard, Vancouver, ISO, and other styles
8

Kakinuma, Yasuhiro, Singo Takezawa, Tojiro Aoyama, Katsutoshi Tanaka, and Hidenobu Anzai. "Electric Field-Assisted Glass Polishing Using Electro-Rheological Gel Pad." Advanced Materials Research 76-78 (June 2009): 319–24. http://dx.doi.org/10.4028/www.scientific.net/amr.76-78.319.

Full text
Abstract:
. A polishing process, which is the final process in manufacturing optical elements, takes a long time and often depends on the experience and special skills. Development of a skill-less polishing technology and automation of its process, therefore, has been required. One of the most promising polishing technologies is Field-assisted Fine Finishing (FFF). In this study, an Electro-rheological Gel (ERG) polishing pad with one-sided patterned electrodes is developed to polish insulator materials and, moreover, a novel electric-field-assisted polishing technology for glass polishing is proposed a
APA, Harvard, Vancouver, ISO, and other styles
9

MURATA, Junji, Yasuhiro TANI, Yu ZHANG, and Nobuyuki NOMURA. "S133013 Advanced polishing technology using epoxy resin polishing pad." Proceedings of Mechanical Engineering Congress, Japan 2013 (2013): _S133013–1—_S133013–3. http://dx.doi.org/10.1299/jsmemecj.2013._s133013-1.

Full text
APA, Harvard, Vancouver, ISO, and other styles
10

Tso, Pei Lum, Zhe Hao Huang, Sheng Wei Chou, and Cheng Yi Shih. "Study on the CMP Pad Life with its Mechanical Properties." Key Engineering Materials 389-390 (September 2008): 481–86. http://dx.doi.org/10.4028/www.scientific.net/kem.389-390.481.

Full text
Abstract:
The primary consumables in chemical mechanical polishing (CMP) are the polishing pad and the slurry. The polishing pad significantly influences the stability of the polishing process and the cost of consumables (CoC). During the polishing process, a diamond dresser must be frequently employed to remove the debris to prevent accumulation, a process known as pad conditioning. In this paper, we investigated the physical properties of the CMP pad such as compressibility, thickness, and surface roughness. The difference between new and used pads has been studied. Conclusively, conditioning via a di
APA, Harvard, Vancouver, ISO, and other styles
More sources

Dissertations / Theses on the topic "Polishing Pad"

1

Roberts, Michael P. (Michael Philip). "Scratching by pad asperities in chemical mechanical polishing." Thesis, Massachusetts Institute of Technology, 2011. http://hdl.handle.net/1721.1/68855.

Full text
Abstract:
Thesis (S.B.)--Massachusetts Institute of Technology, Dept. of Mechanical Engineering, 2011.<br>Cataloged from PDF version of thesis.<br>Includes bibliographical references (p. 23).<br>The exponential increase through time in the number of components in a typical integrated circuit, known as Moore's Law, is driving the need for improvements in manufacturing. A key semiconductor manufacturing process is chemical-mechanical polishing (CMP), which is used to create connecting metal channels above the transistors in a chip. A typical form of this process used in industry is metal CMP. Metal CMP is
APA, Harvard, Vancouver, ISO, and other styles
2

Hight, J. Robert. "Interfacial fluid pressure and pad viscoelasticity during chemical meachanical polishing." Thesis, Georgia Institute of Technology, 2002. http://hdl.handle.net/1853/16715.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

Kim, Sanha Ph D. Massachusetts Institute of Technology. "Micro-scale scratching by soft pad asperities in chemical-mechanical polishing." Thesis, Massachusetts Institute of Technology, 2013. http://hdl.handle.net/1721.1/85537.

Full text
Abstract:
Thesis: Ph. D., Massachusetts Institute of Technology, Department of Mechanical Engineering, 2013.<br>Cataloged from PDF version of thesis.<br>Includes bibliographical references.<br>In the manufacture of integrated circuits (IC) and micro-electromechanical systems (MEMS), chemical-mechanical polishing (CMP) is widely used for providing local and global planarization. In the CMP process, polishing pads, typically made of polyurethanes, play a key role. Due to the random, rough surface of the pad, only the tall asperities contact the wafer and transmit the necessary down force and motion to the
APA, Harvard, Vancouver, ISO, and other styles
4

Meled, Anand. "Optimization of Polishing Kinematics and Consumables during Chemical Mechanical Planarization Processes." Diss., The University of Arizona, 2011. http://hdl.handle.net/10150/145385.

Full text
Abstract:
This dissertation presents a series of studies relating to optimization of kinematics and consumables during chemical mechanical planarization processes. These are also evaluated with the purpose of minimizing environmental and cost of ownership impacts.In order to study diamond micro-wear and substrate wear during planarization processes, a series of static etch tests and wear tests were performed using different types of diamond discs and subjected to various treatments. Scanning Electron Microscopy (SEM) and Inductively Coupled Plasma Membrane Spectroscopy (ICPMS) were used to estimate the
APA, Harvard, Vancouver, ISO, and other styles
5

Liao, Xiaoyan. "Process Optimization and Fundamental Consumables Characterization of Advanced Dielectric and Metal Chemical Mechanical Planarization." Diss., The University of Arizona, 2014. http://hdl.handle.net/10150/323377.

Full text
Abstract:
This dissertation presents a series of studies related to the characterization and optimization of consumables during Chemical Mechanical Planarization (CMP). These studies are also evaluated with the purpose of reducing the cost of ownership as well as minimizing the potential environmental impacts. It is well known that pad-wafer contact and pad surface micro-structure have significant impacts on polishing performance. The first study in this dissertation investigates the effect of pad surface contact and topography on polishing performance during copper CMP. Two different types of diamond d
APA, Harvard, Vancouver, ISO, and other styles
6

Zantye, Parshuram B. "Processing, Reliability And Integration Issues In Chemical Mechanical Planarization." [Tampa, Fla.] : University of South Florida, 2005. http://purl.fcla.edu/fcla/etd/SFE0001263.

Full text
APA, Harvard, Vancouver, ISO, and other styles
7

Manocha, Chhavi. "Chemical Mechanical Planarization: Study of Conditioner Abrasives and Synthesis of Nano-Zirconia for Potential Slurry Applications." [Tampa, Fla] : University of South Florida, 2008. http://purl.fcla.edu/usf/dc/et/SFE0002741.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

Goupil, Antoine. "Modélisation du lissage de défauts sur les optiques asphériques de photolithographie : approche par éléments discrets." Phd thesis, Paris, ENSAM, 2013. http://pastel.archives-ouvertes.fr/pastel-00871688.

Full text
Abstract:
Dans la fabrication de lentilles asphériques pour la photolithographie, l'étape delissage est critique. C'est aujourd'hui le seul procédé qui peut corriger les défauts de hautesfréquences spatiales responsables de diffusions parasites, de diminutions de transmittance etde contraste. Cette opération doit préserver la forme asphérique basse fréquence tout enlissant les défauts de hautes fréquences. Un tel comportement peut être obtenu pour des outilscombinant une couche continue flexible pour le suivi basse fréquence et une couche de poixfractionnée pour le lissage de défauts hautes fréquences.
APA, Harvard, Vancouver, ISO, and other styles
9

Talla, Amadou. "Etude et mise au point de procédés industriels de traitement de surfaces par voie sèche pour la fabrication de cellules photovoltaïques à base de Silicium." Thesis, Montpellier 2, 2014. http://www.theses.fr/2014MON20083.

Full text
Abstract:
Dans la fabrication de cellules photovoltaïques en silicium, certaines étapes cruciales utilisant des procédés humides pourraient être remplacées par des procédés secs. En effet des gains significatifs de rendement de conversion peuvent être obtenus avec la texturisation, le polissage de la face arrière et la gravure du BRL (Boron Ritch layer) par plasma. Cette thèse présente le développement d'un procédé de texturisation par voie sèche adapté au silicium multicristallin et monolike hybride (mono-multi). Pour cela un réacteur plasma de type direct a été conçu et breveté par la société SEMCO EN
APA, Harvard, Vancouver, ISO, and other styles
10

Sallagoity, Pascal. "Etude et réalisation de structures avancées d'isolement par tranchées peu profondes pour technologies CMOS 0. 25 µm." Université Joseph Fourier (Grenoble), 1997. http://www.theses.fr/1997GRE10035.

Full text
Abstract:
Pour les technologies micro-electronique cmos 0. 25 micrometres et en dessous, l'isolement par tranchee peu profonde ou box s'est largement impose pour poursuivre l'integration des circuits integres. Ce procede d'isolement lateral, qui consiste a remplir d'oxyde une tranchee gravee dans le silicium du substrat, possede plusieurs avantages: une bonne planeite, une perte de cote nulle de la zone active du circuit, et une haute densite d'integration. Ces caracteristiques sont toutefois le resultat d'une optimisation delicate de chacune des etapes technologiques critiques du procede. De plus, la m
APA, Harvard, Vancouver, ISO, and other styles
More sources

Books on the topic "Polishing Pad"

1

Fang, Jingli. Jin shu cai liao pao guang ji shu. Guo fang gong ye chu ban she, 2005.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
2

Charles, Hoffman. Hoffman's rockhound guide: Includes how to pan for gold. Edited by Hoffman Margaret 1907- and Webber Bert. Webb Research Group, 1997.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
3

The World Market for Iron or Steel Wool, Pot Scourers, and Iron or Steel Scouring or Polishing Pads and Gloves: A 2004 Global Trade Perspective. Icon Group International, Inc., 2005.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
4

Parker, Philip M. The World Market for Iron or Steel Wool, Pot Scourers, and Iron or Steel Scouring or Polishing Pads and Gloves: A 2007 Global Trade Perspective. ICON Group International, Inc., 2006.

Find full text
APA, Harvard, Vancouver, ISO, and other styles

Book chapters on the topic "Polishing Pad"

1

Zhang, Chao Hui, and Jian Bin Luo. "Contribution of Porous Pad to Chemical Mechanical Polishing." In Solid State Phenomena. Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/3-908451-30-2.1133.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Liu, J. Y., Dong Ming Guo, Zhu Ji Jin, and Ren Ke Kang. "A Suspending Abrasives and Porous Pad Model for the Analysis of Lubrication in Chemical Mechanical Polishing." In Advances in Machining & Manufacturing Technology VIII. Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-999-7.775.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

Kim, Nam Hoon, Gwon Woo Choi, Yong Jin Seo, and Woo Sun Lee. "Indium Tin Oxide Film Characteristics after Chemical Mechanical Polishing Process with Control of Pad Conditioning Temperature." In Solid State Phenomena. Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/3-908451-31-0.263.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

James, David B. "CMP Polishing Pads." In Chemical-Mechanical Planarization of Semiconductor Materials. Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-662-06234-0_6.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

Samitsu, Yamato, Takahumi Yoshida, Nobuo Yasunaga, Takashi Ohmoto, and Sadamu Horie. "Evaluation of Silicon Wafer Polishing Pads — Rheological Behaviour of Polishing Pads and Improvement of Wafer Flatness." In Progress in Precision Engineering. Springer Berlin Heidelberg, 1991. http://dx.doi.org/10.1007/978-3-642-84494-2_20.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

Liu, Juan, Yi Qing Yu, and Xi Peng Xu. "Fabrication of Ultra-Fine Abrasive Polishing Pads by Gel Technique." In Materials Science Forum. Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-421-9.468.

Full text
APA, Harvard, Vancouver, ISO, and other styles
7

Liu, Juan, and Xi Peng Xu. "Influences of Machining Parameters on Silicon Wafer Polished with Gel-Coupled Ultra-Fine Abrasive Polishing Pads." In Advances in Grinding and Abrasive Technology XIV. Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-459-6.279.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

"CCOS Technology Based on Small Polishing Pad." In Large and Middle-Scale Aperture Aspheric Surfaces. John Wiley & Sons Singapore Pte. Ltd, 2017. http://dx.doi.org/10.1002/9781118537503.ch3.

Full text
APA, Harvard, Vancouver, ISO, and other styles
9

Li, Z. C., E. A. Baisie, X. H. Zhang, and Q. Zhang. "Diamond disc pad conditioning in chemical mechanical polishing." In Advances in Chemical Mechanical Planarization (CMP). Elsevier, 2016. http://dx.doi.org/10.1016/b978-0-08-100165-3.00013-9.

Full text
APA, Harvard, Vancouver, ISO, and other styles
10

Li, Z. C., E. A. Baisie, X. H. Zhang, and Q. Zhang. "Diamond disc pad conditioning in chemical mechanical polishing." In Advances in Chemical Mechanical Planarization (CMP). Elsevier, 2022. http://dx.doi.org/10.1016/b978-0-12-821791-7.00014-9.

Full text
APA, Harvard, Vancouver, ISO, and other styles

Conference papers on the topic "Polishing Pad"

1

Zhang, X. H., Z. J. Pei, and Graham R. Fisher. "Measurement Methods of Pad Properties for Chemical Mechanical Polishing." In ASME 2007 International Mechanical Engineering Congress and Exposition. ASMEDC, 2007. http://dx.doi.org/10.1115/imece2007-44013.

Full text
Abstract:
Silicon wafers are the fundamental building blocks for most integrated circuits. Chemical mechanical polishing is used to manufacture silicon wafers as the final material removal process to meet the ever-increasing demand for flatter wafers and lower prices. The polishing pad is one of the critical factors in planarizing wafer surfaces and its properties play critical roles in polishing. However, pad properties change during the process. This paper reviews the measurement methods for thickness, hardness, and Young’s modulus of polishing pads.
APA, Harvard, Vancouver, ISO, and other styles
2

Wang, Jian, Yinbiao Guo, Yaguo Lee, Qiao Xu, and Wei Yang. "Research of optical flats in pad polishing." In 4th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, edited by Li Yang, John M. Schoen, Yoshiharu Namba, and Shengyi Li. SPIE, 2009. http://dx.doi.org/10.1117/12.830815.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

Wang, Jun, Xue-Ling Xing, Yu-Shan Lu, and Liao-Yuan Zhang. "Contact pressure distribution of chemical mechanical polishing based on bionic polishing pad." In Fourth International Seminar on Modern Cutting and Measuring Engineering, edited by Jiezhi Xin, Lianqing Zhu, and Zhongyu Wang. SPIE, 2010. http://dx.doi.org/10.1117/12.883014.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Shan, Haiyang, Xueke Xu, Hongbo He, et al. "The figure simulation of the polishing pad in the continuous polishing process." In Pacific-rim Laser Damage, edited by Takahisa Jitsuno, Jianda Shao, and Wolfgang Rudolph. SPIE, 2014. http://dx.doi.org/10.1117/12.2073492.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

Lv, Yushan, Tian Zhang, Jun Wang, Nan Li, Min Duan, and Xue-Ling Xing. "Analysis of the polishing slurry flow of chemical mechanical polishing by polishing pad with phyllotactic pattern." In Fourth International Seminar on Modern Cutting and Measuring Engineering, edited by Jiezhi Xin, Lianqing Zhu, and Zhongyu Wang. SPIE, 2010. http://dx.doi.org/10.1117/12.883091.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

Mishra, Vinod, Dali R. Burada, Vinod Karar, Alakesh Manna, and Gufran S. Khan. "Development of Flexible Pad Polishing for Freeform Surface." In Frontiers in Optics. OSA, 2018. http://dx.doi.org/10.1364/fio.2018.fm3d.4.

Full text
APA, Harvard, Vancouver, ISO, and other styles
7

Berggren, Ralph R., and Rodney A. Schmell. "Pad polishing for rapid production of large flats." In Optical Science, Engineering and Instrumentation '97, edited by H. Philip Stahl. SPIE, 1997. http://dx.doi.org/10.1117/12.295131.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

Tsai, Jhy-Cherng. "Experimental Investigation on Wafer Polishing of Oxide and Copper Layers." In ASME 2002 International Mechanical Engineering Congress and Exposition. ASMEDC, 2002. http://dx.doi.org/10.1115/imece2002-33463.

Full text
Abstract:
Polishing, in particular chemical-mechanical polishing (CMP), is a critical technology for the planarization of wafers. This paper investigates, via experiments, and compares the performance of CMP process with different process parameters for wafers with silicon-dioxide (SiO2) layer and for wafers with copper (Cu) layer. Polishing pressure (P), speed (V), and back pressure (BP) are used as process parameters in this study. Different pads and slurries are also experimented for copper layer as its properties are different from that of conventional oxide layer. Material removal rate (RR) and non
APA, Harvard, Vancouver, ISO, and other styles
9

Baisie, Emmanuel A., Z. C. Li, and X. H. Zhang. "Finite Element Modeling of Pad Deformation due to Diamond Disc Conditioning in Chemical Mechanical Polishing (CMP)." In ASME 2012 International Manufacturing Science and Engineering Conference collocated with the 40th North American Manufacturing Research Conference and in participation with the International Conference on Tribology Materials and Processing. American Society of Mechanical Engineers, 2012. http://dx.doi.org/10.1115/msec2012-7364.

Full text
Abstract:
Chemical mechanical planarization (CMP) is widely used to planarize and smooth the surface of semiconductor wafers. In CMP, diamond disc conditioning is traditionally employed to restore pad planarity and surface asperity. Pad deformation which occurs during conditioning affects the material removal mechanism of CMP since pad shape, stress and strain are related to cut rate during conditioning, pad wear rate and wafer material removal rate (MRR) during polishing. Available reports concerning the effect of diamond disc conditioning on pad deformation are based on simplified models of the pad an
APA, Harvard, Vancouver, ISO, and other styles
10

Seo, Yong-Jin, and Sung-Woo Park. "Application of Double Polishing Pad for Shallow Trench Isolation Chemical Mechanical Polishing Process." In 2006 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2006. http://dx.doi.org/10.7567/ssdm.2006.p-2-5.

Full text
APA, Harvard, Vancouver, ISO, and other styles
You might also be interested in the extended bibliographies on the topic 'Polishing Pad' for particular source types:
Journal articles Dissertations / Theses
We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!

To the bibliography