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Dissertations / Theses on the topic 'Polishing Pad'

Author: Grafiati

Published: 4 June 2021

Last updated: 15 February 2022

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1

Roberts, Michael P. (Michael Philip). "Scratching by pad asperities in chemical mechanical polishing." Thesis, Massachusetts Institute of Technology, 2011. http://hdl.handle.net/1721.1/68855.

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Thesis (S.B.)--Massachusetts Institute of Technology, Dept. of Mechanical Engineering, 2011.<br>Cataloged from PDF version of thesis.<br>Includes bibliographical references (p. 23).<br>The exponential increase through time in the number of components in a typical integrated circuit, known as Moore's Law, is driving the need for improvements in manufacturing. A key semiconductor manufacturing process is chemical-mechanical polishing (CMP), which is used to create connecting metal channels above the transistors in a chip. A typical form of this process used in industry is metal CMP. Metal CMP is

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2

Hight, J. Robert. "Interfacial fluid pressure and pad viscoelasticity during chemical meachanical polishing." Thesis, Georgia Institute of Technology, 2002. http://hdl.handle.net/1853/16715.

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3

Kim, Sanha Ph D. Massachusetts Institute of Technology. "Micro-scale scratching by soft pad asperities in chemical-mechanical polishing." Thesis, Massachusetts Institute of Technology, 2013. http://hdl.handle.net/1721.1/85537.

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Thesis: Ph. D., Massachusetts Institute of Technology, Department of Mechanical Engineering, 2013.<br>Cataloged from PDF version of thesis.<br>Includes bibliographical references.<br>In the manufacture of integrated circuits (IC) and micro-electromechanical systems (MEMS), chemical-mechanical polishing (CMP) is widely used for providing local and global planarization. In the CMP process, polishing pads, typically made of polyurethanes, play a key role. Due to the random, rough surface of the pad, only the tall asperities contact the wafer and transmit the necessary down force and motion to the

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Meled, Anand. "Optimization of Polishing Kinematics and Consumables during Chemical Mechanical Planarization Processes." Diss., The University of Arizona, 2011. http://hdl.handle.net/10150/145385.

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This dissertation presents a series of studies relating to optimization of kinematics and consumables during chemical mechanical planarization processes. These are also evaluated with the purpose of minimizing environmental and cost of ownership impacts.In order to study diamond micro-wear and substrate wear during planarization processes, a series of static etch tests and wear tests were performed using different types of diamond discs and subjected to various treatments. Scanning Electron Microscopy (SEM) and Inductively Coupled Plasma Membrane Spectroscopy (ICPMS) were used to estimate the

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5

Liao, Xiaoyan. "Process Optimization and Fundamental Consumables Characterization of Advanced Dielectric and Metal Chemical Mechanical Planarization." Diss., The University of Arizona, 2014. http://hdl.handle.net/10150/323377.

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This dissertation presents a series of studies related to the characterization and optimization of consumables during Chemical Mechanical Planarization (CMP). These studies are also evaluated with the purpose of reducing the cost of ownership as well as minimizing the potential environmental impacts. It is well known that pad-wafer contact and pad surface micro-structure have significant impacts on polishing performance. The first study in this dissertation investigates the effect of pad surface contact and topography on polishing performance during copper CMP. Two different types of diamond d

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Zantye, Parshuram B. "Processing, Reliability And Integration Issues In Chemical Mechanical Planarization." [Tampa, Fla.] : University of South Florida, 2005. http://purl.fcla.edu/fcla/etd/SFE0001263.

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7

Manocha, Chhavi. "Chemical Mechanical Planarization: Study of Conditioner Abrasives and Synthesis of Nano-Zirconia for Potential Slurry Applications." [Tampa, Fla] : University of South Florida, 2008. http://purl.fcla.edu/usf/dc/et/SFE0002741.

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8

Goupil, Antoine. "Modélisation du lissage de défauts sur les optiques asphériques de photolithographie : approche par éléments discrets." Phd thesis, Paris, ENSAM, 2013. http://pastel.archives-ouvertes.fr/pastel-00871688.

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Dans la fabrication de lentilles asphériques pour la photolithographie, l'étape delissage est critique. C'est aujourd'hui le seul procédé qui peut corriger les défauts de hautesfréquences spatiales responsables de diffusions parasites, de diminutions de transmittance etde contraste. Cette opération doit préserver la forme asphérique basse fréquence tout enlissant les défauts de hautes fréquences. Un tel comportement peut être obtenu pour des outilscombinant une couche continue flexible pour le suivi basse fréquence et une couche de poixfractionnée pour le lissage de défauts hautes fréquences.

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9

Talla, Amadou. "Etude et mise au point de procédés industriels de traitement de surfaces par voie sèche pour la fabrication de cellules photovoltaïques à base de Silicium." Thesis, Montpellier 2, 2014. http://www.theses.fr/2014MON20083.

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Dans la fabrication de cellules photovoltaïques en silicium, certaines étapes cruciales utilisant des procédés humides pourraient être remplacées par des procédés secs. En effet des gains significatifs de rendement de conversion peuvent être obtenus avec la texturisation, le polissage de la face arrière et la gravure du BRL (Boron Ritch layer) par plasma. Cette thèse présente le développement d'un procédé de texturisation par voie sèche adapté au silicium multicristallin et monolike hybride (mono-multi). Pour cela un réacteur plasma de type direct a été conçu et breveté par la société SEMCO EN

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10

Sallagoity, Pascal. "Etude et réalisation de structures avancées d'isolement par tranchées peu profondes pour technologies CMOS 0. 25 µm." Université Joseph Fourier (Grenoble), 1997. http://www.theses.fr/1997GRE10035.

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Pour les technologies micro-electronique cmos 0. 25 micrometres et en dessous, l'isolement par tranchee peu profonde ou box s'est largement impose pour poursuivre l'integration des circuits integres. Ce procede d'isolement lateral, qui consiste a remplir d'oxyde une tranchee gravee dans le silicium du substrat, possede plusieurs avantages: une bonne planeite, une perte de cote nulle de la zone active du circuit, et une haute densite d'integration. Ces caracteristiques sont toutefois le resultat d'une optimisation delicate de chacune des etapes technologiques critiques du procede. De plus, la m

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11

Pfiffer, Mathilde. "Amélioration de la tenue au flux laser des composants optiques du laser Mégajoules par traitement chimique." Thesis, Bordeaux, 2017. http://www.theses.fr/2017BORD0689/document.

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Cette thèse porte sur l’amélioration de la résistance au flux laser de la surface descomposants optiques en silice en régime nanoseconde. Ce matériau est utilisé sur lesinstallations de laser de puissance telles que le Laser Mégajoule. Pour augmenter la durée de viedes composants optiques et garantir le fonctionnement nominal de cette installation,l’endommagement laser doit être maîtrisé. Il s’agit d’une dégradation irréversible de la surfacedes composants causée par l’interaction entre le faisceau laser et des défauts précurseurs. Cesderniers sont une conséquence de la synthèse de la silice p

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12

Goossens, François. "Modélisation du processus de polissage : identification des effets et des phénoménologies induits par l'usinage abrasif." Thesis, Bordeaux, 2015. http://www.theses.fr/2015BORD0335/document.

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Le polissage est un procédé d’usinage par abrasion qui vise à établir une micro-géométrieprécise sur les surfaces de solides. Pour introduire les spécificités de ce procédé, un tourd’horizon sur l’usinage par abrasion est proposé. Il en découle les paramètres pouvantcaractériser une opération de polissage. Les études scientifiques existantes sont synthétisées etanalysés au regard des objectifs poursuivis. De manière à faire émerger une méthodologiepour établir des modèles et des bases de données dédiées au polissage, un banc expérimental aété mis en place et des essais ont été menés sur une tô

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Staub, Déborah. "Étude du comportement mécanique à rupture des alumines de forte porosité : Application aux supports de catalyseurs d'hydrotraitement des résidus." Thesis, Lyon, INSA, 2014. http://www.theses.fr/2014ISAL0089/document.

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La présente étude porte sur le comportement mécanique de deux types de supports de catalyseurs utilisés industriellement en hydrotraitement des résidus. Ces supports extrudés, fabriqués par IFPEN, sont constitués d’alumine de transition γ avec un taux de porosité proche de 70%. La porosité du premier matériau est uniquement constituée de mésopores (< 50 nm). La porosité du second matériau est constituée de mésopores et de macropores (jusqu’à 20 µm). Les niveaux de sollicitation en service étant très peu connus, cette étude s’attache à décrire de manière précise et exhaustive le comportement

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14

Chen, Cheng-Yu, and 陳政佑. "Chemical Mechanical Polishing: Pad Profile Planarization." Thesis, 2000. http://ndltd.ncl.edu.tw/handle/31883485105360070403.

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碩士<br>國立臺灣科技大學<br>化學工程系<br>88<br>The complexity of current microelectronic devices demands global planarity at different metallization levels. Chemical mechanical polishing (CMP) has the capability of achieving such stringent requirement over step height of several microns. Despite recent advances in CMP, some manufacturing concerns associated with successful implementation of CMP remains to be overcome, e.g., degradation in the removal rate, non-uniformity of material removal etc. In this work, the effects of pad profile on removal rate, within wafer non-uniformity (WIWNU) and wafer-to-wafer

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15

Ho, Jihng-Kuo, and 何靖國. "Investigation of Novel Polishing Pad and Diamond Disk in Chemical Mechanical Polishing Processes." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/yc3yn9.

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博士<br>國立臺北科技大學<br>機電科技研究所<br>102<br>The purpose of this study is focused on related consumptive material study of chemical mechanical polishing, especially polishing pad and diamond conditioner. We devided two parts, in this paper; one is to fabricate a chemical mechanical planarization or polishing (CMP) pad by impregnating a polyurethane matrix with hydrogenated nanodiamond (5–10 nm) and graphite particles. The other is to improve the conventional diamond conditioner polishing performance. In the first part, two types of pads—one containing 0.1 wt% nanodiamond with 3 wt% graphite and the oth

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Kao, Tzu-Pin, and 高子斌. "Effect of Physical Properties of Polishing Pad on Copper Chemical Mechanical Polishing Process." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/65713468785079864304.

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碩士<br>國立交通大學<br>工學院半導體材料與製程設備學程<br>102<br>Chemical mechanical planarization (CMP) process has been widely used in integrated circuit(IC) fabrication, by which the deposit film can be removed through the interactive process of polishing pads, slurries and wafers, and to achieve the desired surface planarity. Recently, copper (Cu) has been adopted for multilevel interconnect in the advanced technology node, instead of plasma etching, CMP is an enabling process for realized Cu interconnect manufacturing. Polishing pad plays a critical role in modulating the slurry transportation which signifi

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Kao, Ching-Yin, and 高靜吟. "Longitudinal Patent Analysis for Chemical Mechanical Polishing Pad." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/49984018482904859883.

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碩士<br>國立臺灣大學<br>圖書資訊學研究所<br>98<br>As the feature sizes of Integrated Circuits continue to shrink, the ability to globally planarize the wafer surface becomes increasingly important. The Chemical Mechanical Polishing or Planarization (CMP) is regarded as the most successful planarization process in IC fabrication. CMP has the capability to achieve global planarization of interlayered dielectrics and metal films and its relative cost-effectiveness. The CMP Pad is one of the most important consumables in CMP and has a critical effect on achieving controlled material removal and uniformity. The ob

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18

Chen, Chun-Liang, and 陳俊良. "Contact Temperature Rise of Polishing Process Considering the Effects of Particle and Polishing Pad." Thesis, 2002. http://ndltd.ncl.edu.tw/handle/92801687517182367368.

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碩士<br>國立中正大學<br>機械系<br>90<br>Polishing process makes the roughness and planarity of a surface reach an admissible range and is widely used for surfaces of metal, ceramic, glass and wafer. The contact temperature plays a central role in polishing process whether the dominant effect is mechanical or chemical. However, previous researches did not take roughness and deformation of polishing pad into account that led to neglect the influence of polishing pad in contact mechanism. Moreover, the flash temperature caused by polishing pad had not been explored in the polishing process. Using a micr

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Huang, Chen-Wei, and 黃振偉. "Performance Optimization of Diamond Disks for Polishing Pad Conditioning during Chemical Mechanical Polishing Process." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/2w4wke.

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碩士<br>國立交通大學<br>工學院半導體材料與製程設備學程<br>106<br>Chemical mechanical polishing (CMP) is an integrated circuit fabrication process for smoothing a solid surface using the combination of chemical and mechanical erosion methods. CMP can improve the uniformity of thin films for better control of subsequent processes. The polishing pad will degrade over time in CMP operations and requires continuing conditioning during the CMP process. To regenerate the surface condition of the polishing pad, a diamond disk are used to continuously remove debris left on the surface of the polishing pad and to reactivate p

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Chen, Yu-Ting, and 陳鈺庭. "Research of Dressing Break-in Time of Polishing Pad for Cu-Chemical Mechanical Polishing Process." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/82249269065356281776.

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碩士<br>國立臺灣科技大學<br>機械工程系<br>102<br>Chemical Mechanical Planarization (CMP) has become a critical technology in current integrated circuits planarization process. Polishing pad plays an important role in the CMP process and the pad replacement frequency also affects the entire process throughput and stability. In this study, the break-in time of IC1000 pad has been investigated and a Break-in Time Index (BTI) has been developed based on the bearing area ratio (BAR) method of pad working layer for CMP process of copper blanket wafers. Experimental results of different parameters in pad dressing t

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Huang, Wei-Jie, and 黃瑋杰. "A Study on Dressing Polishing Pad with Truing Diamond Disk." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/08918323934331010597.

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Chen, Yung-Chang, and 陳永昌. "Investigations for the Temperature Rise of Soft Pad Polishing Process." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/27292548288915923447.

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碩士<br>吳鳳科技大學<br>光機電暨材料研究所<br>100<br>Soft-pad polishing is a key technology for fine surface finish and planarization. In the soft-pad polishing process, the temperature between the polishing interfaces will increase due to the friction and wear effects. The interfacial polishing temperature plays a central role in the soft-pad polishing process and can affect the polishing outcomes. In this study, the polishing temperature model considering the effects of operating parameters and consumables’ characteristics have been developed. In the experimental study, the interfacial polishing temperatur

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Kuo, Hung-Hsien, and 郭弘憲. "Study on the chemical mechanical polishing (CMP) pad life time extension." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/68649403018339463435.

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Hsiao, Li-wei, and 蕭力瑋. "Competitive Advantage for Chemical Mechanical Polishing Pad Industry - A Case Study." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/xgv55d.

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碩士<br>國立雲林科技大學<br>企業管理系<br>102<br>Semiconductor industry has been valued by the industry in Taiwan, in addition to economic benefits for Taiwan, but also adds a lot of the supply chain industry, industrial development will face many challenges, especially if the economy is in a recession environment status, make it easier for the early development of the industry into the rapid decline, so it can adapt to the difficult environment without being out of business, what is the key success factors in supporting business, the more necessary in-depth study and discussion. This study is a semiconduct

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Huang, Tzu-Wen, and 黃資文. "Dressing and Efficiency on Polishing Pad with Brazed Organic Diamond Disk." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/63277602946064655648.

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Tsai, Kun-Cheng, and 蔡坤成. "A Study of Polishing Pad for Bare Glass of TFT-LCD Applications." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/32148079518250545031.

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碩士<br>國立高雄應用科技大學<br>化學工程系碩士班<br>101<br>With the flat plane display(FPD) of a wide range of application, short and light glass become a key technology, and the thinner the glass, chemical mechanical polishing(CMP) is more important. In order to increase the removal rate of the glass, often added abrasive powder into the polishing pad. Because different particle size of the abrasive powder into the polishing pad, the dispersion uniformity of the polishing powder, may causing the variation of the stability on the structure of the polishing pad. In addition,how to design the groove on the polishin

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Hsu, Cheng Kuei, and 徐振貴. "Research on Pad Dressing Process for Chemical Mechanical Polishing of Silicon Wafers." Thesis, 2001. http://ndltd.ncl.edu.tw/handle/11209581351959045549.

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碩士<br>淡江大學<br>機械工程學系<br>89<br>With increasing diameter of silicon wafer and tight specification of photolithography process, global flatness of wafer surface is important in Integrated Circuit(IC) manufacturing. Chemical Mechanical Polishing (CMP) is the most popular method to reach global flatness in wafer fabrication. However, the polishing pad in CMP needs to be dressed to maintain the quality and the throughput of production due to the wear of polishing pad and the influence of impurities. This research is to investigate and develop the process model of pad dressing in CMP of silicon wa

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CHEN, CHIH-LING, and 陳芝鈴. "Improving the Surface Roughness of the Polishing Pad Groove Using Six Sigma." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/42t8hk.

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Xiao, Bai-Cheng, and 蕭百成. "Analysis on Performance Index of Fine Polishing Pad for Copper CMP Process." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/c2u99h.

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碩士<br>國立臺灣科技大學<br>機械工程系<br>107<br>Semiconductor devices recently are consistently heading to achieve higher resolution due to copper wires interconnect in back end of line(BEOL), Chemical Mechanical Polishing/Planarization(CMP) continues to face many challenges to fulfill such demands. The CMP process can effectively improve the flatness and surface quality of wafer and thin film surface. Therefore, the selection of appropriate influencing factors can reduce the scratches and the indentation of the wires in the process. Dishing and erosion phenomena formed on the wires after polishing can be b

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Lin, Yu-Cheng, and 林育正. "On the Planarization Mechanism of Soft Pad Polishing: A Perspective from the Micro-Mechanical Property of Soft Pad." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/27314086986319219835.

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碩士<br>國立中正大學<br>機械工程所<br>98<br>A soft pad has been used to polish high quality fine surfaces since ancient times. The drive for precision components and miniaturized devices in recent decade render the use of soft pad polishing necessary for a wide array of applications including precision machine components, optical devices and semiconductor wafers. However, the underling mechanism of using soft pad for fine polishing process has remained unexplored. This study aims to probe the insight of soft pad polishing from the perspective of the micro-mechanical property of a soft pad. The current stud

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Lin, Yu-Sheng, and 林育陞. "Analyses of Material Removal and Non-uniformity for Polishing Pad in Planarization Process." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/fn36w4.

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碩士<br>崑山科技大學<br>機械工程研究所<br>92<br>Polishing technique plays a pivotal role in machining process nowadays and polishing pad is of utmost importance in this technique. Because of influence of impurities of pad in wear, the polishing pads need to be dressed to recover their begin capability and the process is called planarization of pad. For planarization, it is essential to investigate material removal and surface non-uniformity. The goal of this study is to explore a method to analysis material removal and surface non-uniformity in planarization process. First, the polishing pad deformation was

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Wang, Shih-Yao, and 王詩堯. "Analysis on Pad Performance for Chemical Mechanical Polishing/Planarization of Shallow Trench Isolation." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/6x27u4.

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碩士<br>國立臺灣科技大學<br>機械工程系<br>106<br>Chemical mechanical planarization/polishing (CMP) has been widely adopted in the integrated circuit (IC) fabrication. Due to demand of IC downsizing to nanoscale, CMP process stability and reproducibility continue to face stringent challenges. Polishing pad surface topography is one of the major factors for determination on wafer planarization, which pad polishing efficiency index (PEI) can be considered as one of quantification of pad surface performance in CMP process. This study is to develop PEI based on the interfacial area ratio (Sdr) and related root-me

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Chia, Yang Shih, and 楊適嘉. "Investigations for the Interfacial Micro-contact Temperature Rise of Soft Pad Polishing Process." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/13768989370780069574.

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碩士<br>吳鳳科技大學<br>光機電暨材料研究所<br>101<br>Soft-pad polishing is a key technology for fine surface finish and planarization. During the soft-pad polishing process, the temperature between the polishing interfaces will increase due to the friction and wear effects. The interfacial polishing temperature plays a central role in the soft-pad polishing process and can affect the polishing outcomes. To investigate the polishing temperature rise mechanism during soft-pad polishing process, the current study utilizes dynamic mechanical analysis technique to characterize the micro mechanical property of pol

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Chuang, Chih-Hao, and 莊志豪. "The Abrasion Mechanism of Pad Conditioning and Its Effect on Chemical Mechanical Polishing." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/19617804547272895216.

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碩士<br>國立交通大學<br>工學院碩士在職專班半導體材料與製程設備組<br>98<br>In advanced semiconductor processes, with continuously decrement in line dimension and increment in layers adopted for multi-layer interconnect structure, the challenge with surface flatness and topography becomes more and more serious. For photolithography technology, how to accurately transfer pattern definition from mask to wafer surface becomes a very difficult task. Moreover, the un-even topography on wafer surface also induces variations in step height coverage and results in concerns such as electron migration and high current resistance. Ch

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Tsai, Sung-lin, and 蔡松霖. "A study on the manufacturing of new hot melt adhesive polishing pad and its effects on polishing monocrystalline silicon and stainless steel workpiece." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/83144417263076316131.

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博士<br>國立中央大學<br>機械工程研究所<br>99<br>Polishing pad is an effective tool for polishing workpiece by removing roughness on the surface. Use of polishing pad can be traced back to the ancient mirror polishing of objects of jade, bronze and precious stone. With the development and application of semiconductor production technology and wafer surface polishing the development of polishing pads is also growing in fast pace. While a lot of researches on the polishing conditions and mechanisms have been conducted few studies can be found with the making of new polishing pads. This study focuses at the comb

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Shen, Wen-Yen, and 沈汶諺. "On the Dressing Efficiency on Polishing Pad with Design of Brazed Organic Diamond Disk." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/70420985361638920684.

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碩士<br>國立清華大學<br>動力機械工程學系<br>99<br>Chemical Mechanical Polishing is the most effective method in the process of wafer planarization. As the size of silicon wafer and line width is improved, the development of the technique of planarization has been a crucial issue. Because surface circumstances of polishing pad differ from process to process, the type selection of diamond disk and the parameter in dressing must differ from process to process. Previous research [22] shows that the stability of dressing rate and the ability of extending the life of polishing pad of BODD (Brazed Organic Diamond Di

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Yang, Wei-Zheng, and 楊緯政. "Ultrasonic Vibration and Water-Jet Assisted Diamond Disk Dressing Characteristic of CMP Polishing Pad." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/66594057681439110536.

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碩士<br>國立勤益科技大學<br>機械工程系<br>99<br>This study introduces an ultrasonic, vibration-assisted, chemical mechanical polishing (UV-CMP) method to improve the fabrication process and machining efficiency and an ultrasonic, vibration-assisted, diamond disk (UV-DD) method to enhance the diamond work number, then extension diamond disk life. The removal rate of the copper substrate in CMP and UV-CMP are compared. The pad cut rate, friction force, and pad surface profiles of TDD and UV-DD are also investigated in experiments. In addition an experimental investigation of the dressing characteristics of a p

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Li, Yi-Shiuan, and 李怡萱. "Microcellular Injection Molding Process of Polishing Pad and Application in Chemical Mechanical Planarization Process." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/6xnatj.

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碩士<br>國立臺灣科技大學<br>機械工程系<br>106<br>This study aims to develop a microcellular injection molding (MIM) process of molded pads for chemical mechanical planarization (CMP). Due to its advantages of short process time and adjustable microstructure, this study applies MIM for manufacturing CMP consumables, polishing pads. This study is divided into three parts: the first is the influence of processing parameters and different materials on the structure of the finished microcellular injection molded product is discussed. The material type and supercritical fluid (SCF) dosage have been set as control

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Tsai, Chung-An, and 蔡崇安. "The Electrochemical Study of Polish Pad and Slurry on Cu/Ru Chemical Mechanical Polishing." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/55082851074215573444.

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碩士<br>國立臺灣大學<br>化學工程學研究所<br>103<br>In this study the chemical mechanical polishing of copper and ruthenium in hydrogen peroxide and ammonium persulfate system has been investigated. Hydrogen peroxide or ammonium persulfate was employed as an oxidant in slurries. Either dish scrubber or regular polishing pad was used as polish pad. First, ruthenium was plated on a rotating disk electrode in a three electrode-system containing ruthenium chloride, and it would be used for chemical mechanical polishing. From the chemical mechanical polishing experiments, the experimental results showed that ammoni

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Tsai, Yao-ching, and 蔡耀慶. "The study of using different type of coated abrasive pad in silicon wafer polishing." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/57865562395792928754.

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碩士<br>國立中央大學<br>機械工程研究所<br>98<br>The main application of polishing pad is workpiece surface planarization. When wear apply to traditional polishing pad, pad glazing also occurred, and slurry is difficult to circulate in its 2 dimension structure pores, and traditional polishing pad’s price is expensive. In our research, we use coated abrasive pad which can improve abrasive utilization rate, and slurry can easily circulate in its 3 dimension structure pores, besides, EVA is cheaper than other material of polishing pad. The investigation of this study was divided into two parts. The first part i

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Shun-Jung, Chen, and 陳順榮. "A Study of Building Knowledge-Base on Chemical-Machanical-Polish Polishing Pad and Producing Patent." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/91400257858871481827.

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碩士<br>國立臺灣科技大學<br>機械工程系<br>92<br>This study uses a case of polish pad of Compensated CMP and is based on domain knowledge to integrate with software agent and relate information technology. It presents a systematic innovation process, hoping to reduce the developing time and cost of product. It creates a decision rule that a user’s query will lead to an agent’s response and is based on domain knowledge of CMP polish pad. It establishs a structure of Engineering Agent which provides engineering decision, patent knowledge and engineering innovation services. Furthermore, each of agent

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Hung-Yi, Chang, and 張弘毅. "Development of New Inspection System for Surface Defect Detection on CMP Pad (Chemical Mechanical Polishing)." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/72756690114407346275.

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碩士<br>中華大學<br>電機工程學系碩士班<br>102<br>The semiconductor industry is very important and this industry always have new technologies rapidly and evolving. Within decade ago, just as predicted by Moore's Law, as [3], the chip size continue to be required to reduce its size and also quickly increase integrated circuits (IC) number of transistors on the chip, the IC manufacturing process technology has become more complex. In response to the high demand of electronic components in this booming electronics industry, in addition to the semiconductor wafer mass production, the process becomes sophisticated

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WU, ZHONG-JIE, and 吳仲傑. "Effects of Micro-Mechanical Properties on Polishing Interfacial Phenomena of Polish Pad with Different Material." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/31148698115354208097.

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碩士<br>國立中正大學<br>機械工程學系暨研究所<br>102<br>A soft pad has been used to polish high quality fine surfaces since ancient times. The drive for precision components and miniaturized devices in recent decade renders the use of soft pad polishing necessary for a wide array of applications including precision machine components, optical devices and semiconductor wafers. Chemical-mechanical polishing is widely used for polishing. Chemical-mechanical polishing is a relative motion with pad and work-piece. This can achieve the effect of polishing. This study mainly investigates the effects of differences in t

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Chen, Chun-Chen, and 陳俊臣. "Study on In-Process Sampling Analysis of Polishing Pad Performance Monitoring by Chromatic Confocal Measurement System." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/k6bdem.

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碩士<br>國立臺灣科技大學<br>機械工程系<br>106<br>This study is to develop an in-process pad monitoring system (IPPMS) with chromatic confocal measurement probe attached on a swing dressing arm in Chemical Mechanical Planarization/Polishing, CMP tool. The rotary motion of the polishing pad surface and the swing motion of dressing arm need to be combined to capture the pad height information measured by chromatic confocal system for in-process monitoring of the polishing pad. The pad asperities of most common hard and porous polishing pad have a pore size is about 20 to 50 microns. Thus the IPPMS needs to have

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Tsai, Ming-Cheng, and 蔡明城. "Study on Developing On-line Monitoring Measurement and System Applied on the Performance Level of Polishing Pad." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/xq6akw.

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碩士<br>國立臺灣科技大學<br>機械工程系<br>104<br>Chemical-mechanical planarization (CMP) has been known as a process for global and local planarization in IC fabrication. Due to urgent demand of conducting wires downsizing to nanometer, the stability and availability of CMP process have become critically significant. Currently, the CMP process for on-line measurement device to monitor the surface topography of pad in diamond dressing is not available, thus the polishing pad cannot be so efficiently dressed and evaluated in production. This study aims to develop an on-line monitoring measurement system to ana

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Wen, Chan-Ju, and 溫禪儒. "Analysis on Effective Lifetime Index of Polishing Pad for CMP Process of Monocrystalline Silicon Wafers and Sapphire." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/32497829840515040968.

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碩士<br>國立臺灣科技大學<br>機械工程系<br>102<br>Since ancient times, polishing has been a process critical to bronze mirrors, jade and jewelry grinding until modern wafer planarization in semiconductor industry’s. However, mechanical polishing has certain limitation, the chemical mechanical planarization (CMP) is a key technology available to achieve global flatness and local sub-nanometer surface roughness. Polishing pad and slurry are major accessories in CMP process. Currently, the quality of wafer or process time is cred to assess the replacement time of polishing pad. In this study, a confocal laser me

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Chen, Pei-Hua, and 陳沛樺. "A Study of Conditioning and Polishing to the Advanced Diamond Disk Dressed Graphite Impregnated Pad for CMP Process." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/23967204806998946653.

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Chen, Chiu-Yuan, and 陳秋元. "A Study On The Quality In Polyurethane/Graphite Pad Applied For Chemical Mechanical Polishing Oxide Film Of Wafer." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/fy5ay6.

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碩士<br>國立臺北科技大學<br>材料科學與工程研究所<br>99<br>In Chemical mechanical polishing (CMP) field, Polyurethane materials is widely use on polishing pad, because it have porous can save the slurry, but easy cause glazing, because the porous size is not average. In this study, we add two micron (60μm) of graphite powder in the polyurethane polymer, one is the natural graphite; the other for the hydrogenation of natural graphite after heat treatment, both in polymer addition level of 0%, 8%, 16 %, 24%, after forming polishing pad made of graphite-free pass (No porous Graphite Pad) and with the conventional dia

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Wang, Po-Kai, and 王柏凱. "Development of 3D Confocal Laser Measurement Instrument for Polishing Pad Analysis with Fractal Dimension and Bearing Ratio Methods." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/69702314387120790562.

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碩士<br>國立臺灣科技大學<br>機械工程系<br>101<br>This study is to develop a pad profile analysis for chemical mechanical polishing (CMP) process. A 3D laser confocal measurernent system with fractal dimension and bearing ratio analysis has been developed in this study to investigate pad topography. Laser confocal measurement probe is installed on a linear motor stage, and also feedbacks the X-Y position and height signal of pad topography at the same time. Then, measurement data can be converted into 3D pad topography. In order to predict the pad life function, polishing contact area of pad asperity and slur

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Yan, Li-Wei, and 顏力偉. "A study of Hydrophilic CMP Graphite Impregnated Pad and it’s Characteristics of Conditioning and Polishing Wafer for Oxide Film." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/h2stgn.

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